Tensile deformation of S adsorbed in a monolayer of ReS2 affects its electronic structure and optical properties

IF 1.2 4区 材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY
G. Jiao, G. L. Liu, L. Wei, J. Zhao, G. Zhang
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引用次数: 0

Abstract

Using density functional theory, the effect of biaxial tensile strain on adsorption of S in ReS2 monolayer is calculated. The study finds intrinsic ReS2 system and monolayer ReS2 adsorbed S system are affected by tensile deformation. Intrinsic ReS2 has direct band gap. As S appears, the system becomes indirect band gap. With tensile deformation amount of the intrinsic ReS2 system reaching 10%, the band gap reduces to 0.064eV. The growth rate of reflection and absorption coefficient are decreased by tensile deformation. The maximum reflection and absorption peak undergo red shift, improving the light reflection and absorption ability of adsorption system
吸附在ReS2单层中的S的拉伸变形影响其电子结构和光学性质
利用密度泛函理论,计算了双轴拉伸应变对S在ReS2单层吸附的影响。研究发现,拉伸变形对本征ReS2体系和单层ReS2吸附S体系均有影响。本征ReS2具有直接带隙。当S出现时,系统变成间接带隙。当本征ReS2体系的拉伸变形量达到10%时,带隙减小到0.064eV。拉伸变形降低了反射系数和吸收系数的增长率。最大反射和吸收峰发生红移,提高了吸附体系的光反射和吸收能力
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来源期刊
Chalcogenide Letters
Chalcogenide Letters MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED
CiteScore
1.80
自引率
20.00%
发文量
86
审稿时长
1 months
期刊介绍: Chalcogenide Letters (CHL) has the aim to publish rapidly papers in chalcogenide field of research and appears with twelve issues per year. The journal is open to letters, short communications and breakings news inserted as Short Notes, in the field of chalcogenide materials either amorphous or crystalline. Short papers in structure, properties and applications, as well as those covering special properties in nano-structured chalcogenides are admitted.
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