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Influence of deposition voltage on tribological properties of W-WS2 coatings deposited by electrospark deposition 沉积电压对电火花沉积W-WS2涂层摩擦学性能的影响
4区 材料科学
Chalcogenide Letters Pub Date : 2023-11-10 DOI: 10.15251/cl.2023.2010.741
T. X. Liu, C. A. Guo, F. S. Lu, X. Y. Zhang, L. Zhang, Z. J. Wang, Z. Y. Xu, G. L. Zhu
{"title":"Influence of deposition voltage on tribological properties of W-WS2 coatings deposited by electrospark deposition","authors":"T. X. Liu, C. A. Guo, F. S. Lu, X. Y. Zhang, L. Zhang, Z. J. Wang, Z. Y. Xu, G. L. Zhu","doi":"10.15251/cl.2023.2010.741","DOIUrl":"https://doi.org/10.15251/cl.2023.2010.741","url":null,"abstract":"Electrospark deposition coatings were prepared with different deposition voltage on CrNi3MoVA steel substrates by using a W-WS2 sintered electrode and their tribological properties were investigated. The microhardness, roughness and tribological properties of the coatings were tested by using Vickers hardness tester, confocal laser scanning microscope and tribometer, and the morphologies, composition and phase structure were obtained by utilizing scanning electron microscopy (SEM), energy dispersive X-ray spectrum (EDS) and X-ray diffraction(XRD). The results showed that with the increase of deposition voltage, the hardness and roughness of the coatings increase. The coatings remarkably increase the tribological properties of CrNi3MoVA steel, and among the three coatings deposited at 40 V, 60 V and 80 V, the coating deposited at 60 V has the smallest friction coefficient and the best wear resistance.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135092105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nucleation and growth study of SnS nanostructures prepared by electrodeposition method 电沉积法制备SnS纳米结构的成核与生长研究
4区 材料科学
Chalcogenide Letters Pub Date : 2023-11-10 DOI: 10.15251/cl.2023.2010.753
A. Nouri, D. Dekhil, H. Guessas
{"title":"Nucleation and growth study of SnS nanostructures prepared by electrodeposition method","authors":"A. Nouri, D. Dekhil, H. Guessas","doi":"10.15251/cl.2023.2010.753","DOIUrl":"https://doi.org/10.15251/cl.2023.2010.753","url":null,"abstract":"SnS nanostructures were prepared using the electrodeposition technique in aqueous solutions containing 0.1M of SnSO4 and Na2SO4. Three concentrations (0.05M, 0.10M, and 0.15M) of Na2SO4 were tested. The electrodeposition of SnS nanostructures on ITO substrates was investigated by cyclic voltammetry, chronoamperometry, SEM microscopy, and X-ray diffraction techniques. The concentration-dependent nucleation and growth mechanisms of electrodeposited SnS were analyzed using current transients. For the concentrations (0.05M and 0.10 M), the SnS films follow 3D growth in instantaneous nucleation mode. For a concentration of 0.15M, the SnS films start with progressive nucleation before switching to the instantaneous nucleation mode. The SnS nanostructures produced were found to be polycrystalline with an orthorhombic structure. XRD measurement shows that the preferred orientation of SnS nanostructures is in the (111) and (101) directions for the lower concentrations. SEM images reveal the 3D growth model of the samples, which is consistent with the electrochemical analysis.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135091782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermal conductivity and lattice dynamics of thermoelectric oxychalcogenide BiCuTeO 热电性氧硫族化合物BiCuTeO的热导率和晶格动力学
4区 材料科学
Chalcogenide Letters Pub Date : 2023-11-10 DOI: 10.15251/cl.2023.2010.697
M. Guenfoud, M. Hamouda
{"title":"Thermal conductivity and lattice dynamics of thermoelectric oxychalcogenide BiCuTeO","authors":"M. Guenfoud, M. Hamouda","doi":"10.15251/cl.2023.2010.697","DOIUrl":"https://doi.org/10.15251/cl.2023.2010.697","url":null,"abstract":"Recently, BiCuTeO is considered as one of the promising thermoelectric materials due to its ultra-low thermal conductivity. For this reason, the thermoelectric characteristic of this material has been studied to evaluate the lattice thermal conductivity (𝜅𝜅𝐿𝐿) from firstprinciples calculations which are based on solving linearized Boltzmann transport equations (LBTE) through the relaxation time (RTA) approximation. These calculations are used to predict the behavior of phonons in order to understand the origin of the ultralow thermal conductivity of BiCuTeO. The lattice thermal conductivity of BiCuTeO is reproduced with high accuracy. Our calculations predict that BiCuTeO announces a strong anharmonicity, which is the cause of the very low value of the thermal conductivity. This results in very high group speeds. Moreover, the calculations of the elastic properties, dielectric constants, phonon group velocities, lifetimes, and Grüneisen parameters shows that the lattice thermal conductivity exhibits an obvious anisotropy.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135091610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Retraction notice: Optimization of chemical bath deposited CdSSe thin films 撤回通知:化学浴沉积CdSSe薄膜的优化
4区 材料科学
Chalcogenide Letters Pub Date : 2023-11-10 DOI: 10.15251/cl.2023.2010.751
M. A. Jafarov, E. F. Nasirov, V. Mammadov, S. A. Jahangirova
{"title":"Retraction notice: Optimization of chemical bath deposited CdSSe thin films","authors":"M. A. Jafarov, E. F. Nasirov, V. Mammadov, S. A. Jahangirova","doi":"10.15251/cl.2023.2010.751","DOIUrl":"https://doi.org/10.15251/cl.2023.2010.751","url":null,"abstract":"","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135091611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Steady-state and transient photocurrents of As-S-Sb-Te amorphous thin films As-S-Sb-Te非晶薄膜的稳态和瞬态光电流
4区 材料科学
Chalcogenide Letters Pub Date : 2023-11-10 DOI: 10.15251/cl.2023.2010.725
O. V. Iaseniuc, M. S. Iovu
{"title":"Steady-state and transient photocurrents of As-S-Sb-Te amorphous thin films","authors":"O. V. Iaseniuc, M. S. Iovu","doi":"10.15251/cl.2023.2010.725","DOIUrl":"https://doi.org/10.15251/cl.2023.2010.725","url":null,"abstract":"In the present work some nanostructured quaternary chalcogenides of the As-S-Sb-Te system have been investigated by a photoelectric method. The spectral distribution of steadystate photocurrent Iph=(λ) and the relaxation curves of photocurrent Iph=(t) were registered at positive and negative polarity of the applied voltage to the top Al illuminated electrode. In the spectral distribution of steady-state photocurrent, for the amorphous thin films As1.17S2.7Sb0.83Te0.40, As1.04S2.4Sb0.96Te0.60, As0.63S2.7Sb1.37Te0.30, and As0.56S2.4Sb1.44Te0.60 in the wavelength range λ=0.50÷0.92 mm (2.48÷1.35 eV) some maxima were detected, which are the result of the presence of binary clusters As2S3, Sb2S3 and Sb2S3. The photovoltaic method was used to obtain the value of the band gap width, which was about Eg =1.41 eV.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135091781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of Cu ratios dopant on ZnSe thin films structural and optical properties Cu比掺杂对ZnSe薄膜结构和光学性能的影响
4区 材料科学
Chalcogenide Letters Pub Date : 2023-11-01 DOI: 10.15251/cl.2023.2011.759
M. N. Abdel-Salam, N. Sabry, E. S. Yousef, E. R. Shaaban
{"title":"Effect of Cu ratios dopant on ZnSe thin films structural and optical properties","authors":"M. N. Abdel-Salam, N. Sabry, E. S. Yousef, E. R. Shaaban","doi":"10.15251/cl.2023.2011.759","DOIUrl":"https://doi.org/10.15251/cl.2023.2011.759","url":null,"abstract":"This study focused to prepare poly-crystalline (ZnSe)1-x Cux thin films, where x values vary from 0 to 0.1 %. the effect of Cu ratios dopant on structural, phases and optical properties has been investigated. As prepared thin films were deposited onto a cleaning glass substrate under high vacuum conditions (10-7 mbr) at room temperature using the “ evaporation technique”. The analysis results according to data of the X-ray diffraction technique of all films refer to the growth polycrystalline with hexagonal wurtzite structure of Zn-Se with no presence of any further phases. The changes in numerous parameters such as volume of the unit cell, atomic packing factor, dislocation density, lattice constant and bond length with the Cu ratio were estimated and described. As well, the crystallite sizes,D, the lattice micro-strain,ε and dislocation density,δ have been calculated the results evidence that the micro-structural parameters enhancement with increment Cu atoms. On the other hand, the optical parameters of the as-synthesized films (ZnSe)1-xCux (0 ≤ x ≤ 0.1) were performed utilizing “UV–V is spectro -photometer” with a wavelength range of 300 to 2400 nm. The results show that as the Cu ratio increases, the absorption edge shifts to a higher wavelength and the optical band gap, Eg opt decreases from 2.63 eV to 2.52 eV. Finally, the behaviour of the optical constant parameters as real,εr/ imaginary, εi parts, dissipation factor,tan δ, volume/surface energy loss functions and dispersion parameters were shown to depend on the variation of the Cu ratio and wavelengths.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135614842","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Synthesis of wittichenite Cu3BiS3 thin films by sulfurizing thermally evaporated Cu-Bi metallic stacks 通过硫化热蒸发铜铋金属叠层合成维氏铜铋(Cu3BiS3)薄膜
IF 1 4区 材料科学
Chalcogenide Letters Pub Date : 2023-11-01 DOI: 10.15251/cl.2023.2011.797
U. Chalapathi, P. R. Prasad, C. P. Reddy, S. Sambasivam, P. Rosaiah, M. Ouladsmane, S. Alhammadi, S.M. Lee, S.H. Park
{"title":"Synthesis of wittichenite Cu3BiS3 thin films by sulfurizing thermally evaporated Cu-Bi metallic stacks","authors":"U. Chalapathi, P. R. Prasad, C. P. Reddy, S. Sambasivam, P. Rosaiah, M. Ouladsmane, S. Alhammadi, S.M. Lee, S.H. Park","doi":"10.15251/cl.2023.2011.797","DOIUrl":"https://doi.org/10.15251/cl.2023.2011.797","url":null,"abstract":"Wittichenite Cu3BiS3 thin films have received significant interest as light harvesters owing to their suitable optoelectronic properties and presence of earth-abundant, and non-toxic elements. We have synthesized Cu3BiS3 thin films by a two-stage process; in which, Cu/Bi/Cu metallic stacks were thermally evaporated and then sulfurized at 400 o C for 10–60 min in a quartz tubular furnace. The influence of sulfurization time on the structural, microstructural, compositional, optical, and electrical properties of the films was investigated. The results revealed that the films were orthorhombic Cu3BiS3 with the following lattice parameters: a = 0.768 nm; b = 1.043 nm; and c = 0.674 nm. Films uniformity, compactness, and crystal grain size increased upon increasing the sulfurization duration. On increasing the sulfurization time, the elemental stoichiometry of the films improved, and the direct optical bandgap increased from 1.38 to 1.40 eV. Additionally, Cu3BiS3 films exhibited p-type electrical conductivity and the electrical resistivity decreased with the increasing sulfurization time. Consequently, the Cu3BiS3 films synthesized at 30- and 60-min sulfurization durations can be applied to thin-film solar cells.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":null,"pages":null},"PeriodicalIF":1.0,"publicationDate":"2023-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139294476","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The structure polymer/As-Se-S doped by Bi for X-ray imaging 用于 X 射线成像的掺铒聚合物/砷-硒-硒结构
IF 1 4区 材料科学
Chalcogenide Letters Pub Date : 2023-11-01 DOI: 10.15251/cl.2023.2011.803
A. Chirita, A. Hustuc, N. Nasedchina, S. Vatavu
{"title":"The structure polymer/As-Se-S doped by Bi for X-ray imaging","authors":"A. Chirita, A. Hustuc, N. Nasedchina, S. Vatavu","doi":"10.15251/cl.2023.2011.803","DOIUrl":"https://doi.org/10.15251/cl.2023.2011.803","url":null,"abstract":"The polymer/67at %(As2S3)0,985(Bi2Se3)0,015:33 at.% As2Se3 structure for X-ray imaging has been investigated. The possibility of registering relief-phase images for radiation of “white” spectrum of tungsten anode X-ray tube was shown.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":null,"pages":null},"PeriodicalIF":1.0,"publicationDate":"2023-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139298618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The role of Cu doping in properties of CdZnS thin films Cu掺杂对CdZnS薄膜性能的影响
4区 材料科学
Chalcogenide Letters Pub Date : 2023-11-01 DOI: 10.15251/cl.2023.2011.789
K. A. Mohammed, R. A. Talib, B. Bhavani, N. H. J. Al Hasan, A. Kareem, F. H. Alsultany, R. S. Zabibah, M. A. Alkhafaji, S. Sharma
{"title":"The role of Cu doping in properties of CdZnS thin films","authors":"K. A. Mohammed, R. A. Talib, B. Bhavani, N. H. J. Al Hasan, A. Kareem, F. H. Alsultany, R. S. Zabibah, M. A. Alkhafaji, S. Sharma","doi":"10.15251/cl.2023.2011.789","DOIUrl":"https://doi.org/10.15251/cl.2023.2011.789","url":null,"abstract":"CdZnS thin films created via chemical bath deposition were examined to see how Cu doping affected their characteristics. Cu ions were added to the films in order to change their optical, structural, and morphological characteristics. These findings suggest that Cu doping can be used to modify the optical characteristics of CdZnS thin films. By using Xray diffraction (XRD) and the energy dispersive analysis of X-ray method (EDAX), we were able to investigate the compositional ratio as well as the structural features of the films. The field emission scanning electron microscopy (FESEM) technique was utilized in order to investigate the surface morphology of the produced films. The morphology of prepared films was fiber-like and in nanoscale. In addition, the UV–vis spectroscopy technique was utilized in order to characterize the optical properties of thin films. The prepared Cu-CdZnS film was found to have direct band gap equal to 2.64 eV and indirect gap equal to 2.4 eV.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135614849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study of the microstructure of Cu2SnS3 films, prepared through sulfurization of metal precursors deposited by magnetron sputtering 研究通过磁控溅射沉积金属前驱体硫化制备的 Cu2SnS3 薄膜的微观结构
IF 1 4区 材料科学
Chalcogenide Letters Pub Date : 2023-11-01 DOI: 10.15251/cl.2023.2011.811
S. Petrosyan, A. Musayelyan, E. Zaretskaya, V. Gremenok, K. Buskis, A. Stanchik
{"title":"Study of the microstructure of Cu2SnS3 films, prepared through sulfurization of metal precursors deposited by magnetron sputtering","authors":"S. Petrosyan, A. Musayelyan, E. Zaretskaya, V. Gremenok, K. Buskis, A. Stanchik","doi":"10.15251/cl.2023.2011.811","DOIUrl":"https://doi.org/10.15251/cl.2023.2011.811","url":null,"abstract":"We present the results of the study of the microstructure, X-ray diffraction and Raman scattering spectra of Cu2SnS3 (CTS) films synthesized at 500 o C by the sulfurization of SnCu stacked metal precursors with different annealing time. The results indicate that sulfurization time has a great influence on both composition and morphology of the film. It is shown that the process of formation of a single-phase CTS compound with a monoclinic structure and composition close to stoichiometry is completed for a synthesis time of 60 - 80 min. With an increase in the time of synthesis to 120 min, the preservation of the monoclinic structural modification of the material is observed, accompanied by a shift in the stoichiometric composition, namely copper enrichment, material delamination and degradation of microstructural characteristics. As a result, it was found that the most optimal conditions for the synthesis of a single-phase Cu2SnS3 compound of a monoclinic structure are the temperature 500 o С with the duration of the sulfurization process from 60 to 80 min.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":null,"pages":null},"PeriodicalIF":1.0,"publicationDate":"2023-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139303458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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