γ辐照对Ag基三元和四元硫族化合物薄膜的影响

IF 1.2 4区材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY

Chalcogenide Letters Pub Date : 2023-05-01 DOI:10.15251/cl.2023.205.325

N. Yaduvanshi, R. Pandey, V. Khemchandani

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引用次数: 0

摘要

本文讨论了γ辐照(50 kGy和100 kGy)对InxSb20-x Ag10Se70 (x= 0,10,20)薄膜性能的影响。对其进行了X射线衍射、透射电镜、光学性质和电学性质的研究。X射线衍射和透射电镜图像揭示了薄膜的无定形性质。辐照后观察到光能隙的变化。光学带隙随着尾流参数的增大而增大。N值随辐照剂量的增大而减小。发现三元体系的结晶度比四元体系高。从电学测量来看，传导处于局域状态，直流活化能在伽玛辐照后下降。

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Gamma irradiation effects on Ag based ternary and quaternary chalcogenide films

In this work the effect of gamma irradiation (50 kGy and 100 kGy) on properties of InxSb20-x Ag10Se70 (x= 0,10,20) films has been discussed. X ray diffraction, Transmission Electron Microscopy, Optical properties and Electrical properties have been successfully studied. X Ray diffraction and TEM images reveal the amorphous nature of thin films. A change in the optical energy gap is observed after irradiation.The optical band gap increases accompanied with increase in tailing parameter.The value of N decreases with irradiation dose.It is found that crytallinity is higher for ternary system as compare to quarternary system. From electrical measurements it has been that conduction is in the localised state and the DC activation energy decrease upon gamma irradiations.

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来源期刊

Chalcogenide Letters MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED

CiteScore

1.80

自引率

20.00%

发文量

审稿时长

1 months

期刊介绍： Chalcogenide Letters (CHL) has the aim to publish rapidly papers in chalcogenide field of research and appears with twelve issues per year. The journal is open to letters, short communications and breakings news inserted as Short Notes, in the field of chalcogenide materials either amorphous or crystalline. Short papers in structure, properties and applications, as well as those covering special properties in nano-structured chalcogenides are admitted.