(Z)-2-(吡咯烷-2-酰基)硫脲基镍(II)配合物作为单源前驱体用于合成NiS纳米颗粒和薄膜

IF 1.2 4区 材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY
A. M. Jawore, T. Xaba, M. Moloto
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引用次数: 0

摘要

硫化镍纳米晶体在催化剂、太阳能电池和电极材料等不同研究领域都有很好的应用前景。(Z) 制备了2-(吡咯烷-2-亚基)硫脲配体和(Z)-2-(吡咯烷2-亚基)脲基镍(II)配合物,并将其作为单源分子前驱体用于合成硫化镍纳米颗粒和薄膜。研究了合成过程中温度的影响。用各种仪器对合成的纳米材料进行了表征。在制备光学带隙能量为2.79eV-3.56eV的NiS薄膜的过程中,当反应温度升高时,纳米颗粒的紫外-可见光谱结果发生红移,而当温度升高时则发生蓝移。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
(Z)-2-(pyrrolidin-2-ylidene) thiourea based nickel (II) complex as a single source precursor for the synthesis of NiS nanoparticles and thin films
Nickel sulfides nanocrystals may be regarded as promising of materials in different research areas such as catalysts, solar cells, and electrode-materials. (Z)-2-(pyrrolidin-2-ylidene) thiourea ligand and (Z)-2-(pyrrolidin-2-ylidene) thiourea based nickel (II) complex have been prepared and utilized as single source molecular precursor for the synthesis of nickel sulfide nanoparticles and thin films. The effect of temperature was studies during the synthetic processes. The synthesized nanomaterials were characterized with various instruments. UV-Vis spectroscopy results of the nanoparticles were red shifting when the reaction temperature was increased whereas the blue shift was observed when the temperature was elevated during the preparation of the NiS thin films with the optical band gap energies ranging from 2.79 eV - 3.56 eV. All the XRD patterns for the NiS thin films confirm the predominance of pure hexagonal phase.
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来源期刊
Chalcogenide Letters
Chalcogenide Letters MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED
CiteScore
1.80
自引率
20.00%
发文量
86
审稿时长
1 months
期刊介绍: Chalcogenide Letters (CHL) has the aim to publish rapidly papers in chalcogenide field of research and appears with twelve issues per year. The journal is open to letters, short communications and breakings news inserted as Short Notes, in the field of chalcogenide materials either amorphous or crystalline. Short papers in structure, properties and applications, as well as those covering special properties in nano-structured chalcogenides are admitted.
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