zns掺杂CdS对CZTSSe太阳能电池性能影响的分析模型

IF 1.2 4区材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY

Chalcogenide Letters Pub Date : 2023-05-01 DOI:10.15251/cl.2023.205.333

H. Mohamed, Shazia Ali, M. R. Ahmed, W. S. Mohamed

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引用次数: 1

摘要

本研究的重点是由ITO、CdS、ZnS、CZTSSe和Mo组成的薄膜结构(即ITO/CdS:ZnS/CZTSSe/Mo)用于太阳能电池的应用。从理论上研究了ZnS含量对电池性能的影响。利用现有结构的实验数据，计算了ITO和CdS:ZnS层在不同界面处的反射和吸收引起的光损耗。利用吸收层和损耗区参数计算了CZTSSe吸收体前后表面载流子复合造成的损耗。研究发现，增加ZnS含量会使更多的光子进入吸收层，导致短路电流密度增加。在考虑光学损耗和复合损耗的情况下，当zns含量= 0.5时，器件的最大效率约为13.75%，填充系数为81.6%，开路电压为808 mV。

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Analytical model for studying the role of ZnS-doped CdS on the performance of CZTSSe solar cells

This study focuses on thin-film structures made of ITO, CdS, ZnS, CZTSSe, and Mo (i.e., ITO/CdS:ZnS/CZTSSe/Mo) for solar cell applications. The effect of ZnS content on the performance of this cell has been theoretically investigated. The optical losses caused by reflection at various interfaces and absorption in ITO and CdS:ZnS layers have been calculated using the current structure's experimental data. The losses due to charge carrier recombination at the front and back surfaces of the CZTSSe absorber have been calculated using the absorber layer and depletion region parameters. It was discovered that increasing the ZnS content causes more photons to enter the absorber layer, causing the short-circuit current density to increase. Under consideration of optical and recombination losses, a maximum efficiency of about 13.75%, a fill factor of 81.6%, and an open-circuit voltage of 808 mV were obtained for ZnS-content = 0.5.

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来源期刊

Chalcogenide Letters MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED

CiteScore

1.80

自引率

20.00%

发文量

审稿时长

1 months

期刊介绍： Chalcogenide Letters (CHL) has the aim to publish rapidly papers in chalcogenide field of research and appears with twelve issues per year. The journal is open to letters, short communications and breakings news inserted as Short Notes, in the field of chalcogenide materials either amorphous or crystalline. Short papers in structure, properties and applications, as well as those covering special properties in nano-structured chalcogenides are admitted.