聚合物- aiibvi (CdS, ZnS)光敏半导体复合材料的光电驻极体效应

IF 1.2 4区材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY

Chalcogenide Letters Pub Date : 2023-04-01 DOI:10.15251/cl.2023.204.285

A. F. Gochuyeva, Kh. Kh. Hashimov, I. Y. Bayramov

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引用次数: 3

摘要

研究了由极性（含氟）和非极性（聚烯烃）聚合物-高密度聚乙烯（HDPE）、低密度聚乙烯（LDPE）、F42、F2-ME和无机相AııBvı（CdS、ZnS）组成的复合异质结构中的光电效应。已经确定，在给定体积份额的无机相中，光电电势的差异主要取决于聚合物基质的极性。在这些复合材料中，在强电场和光的共同作用下形成的光电效应的可能机制。实验证明，在聚合物-AııBvı半导体界面形成的势垒分离了由于内部光电效应形成的电荷载流子，并确保了驻极体电势差的形成。利用热激电流谱研究了聚合物-AıBvı复合材料的驻极体电荷状态。

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Photoelectret effect in polymer-AIIBVI (CdS, ZnS) composites of photosensitive semiconductors

The photoelectret effect in composite heterostructures consisting of polar (fluorinecontaining) and non-polar (polyolefins) polymers - high density polyethylene (HDPE), low density polyethylene (LDPE), F42, F2-ME and the inorganic phase AııBvı (CdS, ZnS) has been studied. It has been established that the difference in photoelectret potentials in a given volume share of the inorganic phase mainly depends on the polarity of the polymer matrix. A possible mechanism of the photoelectret effect formed under the combined action of a strong electric field and light in these composites. It has been experimentally established that the potential barrier formed at the polymer- AııBvı semiconductor interface separates the electric charge carriers formed as a result of the internal photoelectric effect and ensures the formation of an electret potential difference. The electret charge state of polymer- AııBvı composites was studied using the spectrum of thermally stimulated current.

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来源期刊

Chalcogenide Letters MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED

CiteScore

1.80

自引率

20.00%

发文量

审稿时长

1 months

期刊介绍： Chalcogenide Letters (CHL) has the aim to publish rapidly papers in chalcogenide field of research and appears with twelve issues per year. The journal is open to letters, short communications and breakings news inserted as Short Notes, in the field of chalcogenide materials either amorphous or crystalline. Short papers in structure, properties and applications, as well as those covering special properties in nano-structured chalcogenides are admitted.