Chalcogenide Letters最新文献_第7页

Determining the majority charge carrier, optical and structural properties of electrochemically deposited lead tin sulfide (PbSnS) thin films 电化学沉积的铅锡硫化(PbSnS)薄膜的主要载流子、光学和结构性质的测定

IF 1 4区材料科学

Chalcogenide Letters Pub Date : 2023-03-01 DOI: 10.15251/cl.2023.203.205

I. Nkrumah, F. Ampong, A. Britwum, M. Paal, B. Kwakye-Awuah, R. K. Nkum, F. Boakye

引用次数: 0

Voltage and frequency controlled Ge/SeO2 thin film transistors designed as rectifiers, negative capacitance and negative conductance sources 电压和频率控制的Ge/SeO2薄膜晶体管设计为整流器、负电容和负电导源

IF 1 4区材料科学

Chalcogenide Letters Pub Date : 2023-03-01 DOI: 10.15251/cl.2023.203.177

A. F. Qasrawi, H. Khanfar

引用次数: 1

Studying the effect of copper on the p-ZnTe/n-AgCuInSe2/p-Si for thin films solar cell applications 铜对薄膜太阳能电池用p-ZnTe/n-AgCuInSe2/p-Si的影响研究

IF 1 4区材料科学

Chalcogenide Letters Pub Date : 2023-02-23 DOI: 10.15251/cl.2023.202.91

R. H. Athab, B. H. Hussein

{"title":"Studying the effect of copper on the p-ZnTe/n-AgCuInSe2/p-Si for thin films solar cell applications","authors":"R. H. Athab, B. H. Hussein","doi":"10.15251/cl.2023.202.91","DOIUrl":"https://doi.org/10.15251/cl.2023.202.91","url":null,"abstract":"A thin film of AgInSe2 and Ag1-xCuxInSe2 as well as n-Ag1-xCuxInSe2 /p-Si heterojunction with different Cu ratios (0, 0.1, 0.2) has been successfully fabricated by thermal evaporation method as absorbent layer with thickness about 700 nm and ZnTe as window layer with thickness about 100 nm. We made a multi-layer of p-ZnTe/n-AgCuInSe2/p-Si structures, In the present work, the conversion efficiency (η) increased when added the Cu and when used p-ZnTe as a window layer (WL) the bandgap energy of the direct transition decreases from 1.75 eV (Cu=0.0) to 1.48 eV (Cu=0.2 nm) and the bandgap energy for ZnTe=2.35 eV. The measurements of the electrical properties for prepared films showed that the D.C electrical conductivity (σd.c) increased with increasing Cu content for AgCuInSe2 thin films. So the electrical conductivity changed from 1 (Ω.cm)-1 to 29.96 (Ω.cm)-1 when x changed from 0.0 to 0.2. The prepared thin films have two activation energies (Ea1 & Ea2) in the temperature ranges of (300-393) K and (303-473) K. The C-V measurements revealed that all prepared heterojunctions were of the abrupt type and the junction capacitance reduced while the width of depletion region and the built-in potential increased with increasing the Cooper content. The current-voltage characteristics under dark condition of AgCuInSe2 heterojunctions, the current-voltage measurements under illumination showed that the performance of heterojunction solar cell improved with increasing Cu content. The result indicated that the prepared solar cell with 0.2 Ag content exhibited the highest efficiency (η = 1.68%) compared to other prepared solar cells.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-02-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43122126","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Characterization and photocatalytic activity of CdZnS nanoparticles incorporated with medicative leaf excerpt 药用叶提取物掺杂CdZnS纳米颗粒的表征及光催化活性研究

IF 1 4区材料科学

Chalcogenide Letters Pub Date : 2023-02-23 DOI: 10.15251/cl.2023.202.121

N. K. Cinsy, R. Jeya Geetha

引用次数: 1

Mechanical stability parameters of chalcogenides and pnictides based optoelectronic materials 硫族化合物和肽类化合物基光电材料的机械稳定性参数

IF 1 4区材料科学

Chalcogenide Letters Pub Date : 2023-02-23 DOI: 10.15251/cl.2023.202.101

R. Gupta, P. Varshney, Pravesh, M. Lal, D. Kumar, K. Singh, A. Verma

引用次数: 0

Preparation of CdS/g-C3N4 heterojunction photocatalyst with high activity sites by acid treatment 酸处理制备高活性位CdS/g-C3N4异质结光催化剂

IF 1 4区材料科学

Chalcogenide Letters Pub Date : 2023-02-23 DOI: 10.15251/cl.2023.202.153

Y. L. Ma, Y. Tao

{"title":"Preparation of CdS/g-C3N4 heterojunction photocatalyst with high activity sites by acid treatment","authors":"Y. L. Ma, Y. Tao","doi":"10.15251/cl.2023.202.153","DOIUrl":"https://doi.org/10.15251/cl.2023.202.153","url":null,"abstract":"The key to achieve efficient degradation of organic pollutants lies in improving the separation efficiency of photogenerated electron-hole pairs in photocatalysts. Here, the hydrogen bonds between g-C3N4 layers were broken by concentrated acid etching and exfoliation to obtain a more dispersed and lighter g-C3N4 nanosheet structure, and then the CdS spherical nanoparticles were dispersed on g-C3N4 nanosheets by hydrothermal method. The optimal loading of CdS on g-C3N4 nanosheets was determined by testing the degradation performance of the composite photocatalysts with different loading amounts. The degradation performance was tested by simulating sunlight using a 700-800 W xenon lamp equipped with a 420 nm cut-off filter, which showed that the degradation of MB by 7% CdS/g-C3N4 photocatalyst was 90.7% for MB. It indicates that concentrated acid treatment and loading of CdS nanoparticles can significantly improve the photocatalytic activity of g-C3N4 nanosheets, which is attributed to the enhancedup conversion function of g-C3N4 by loading CdS to enhance the response range and ability of g-C3N4 in visible light and the photogenerated electron-hole pair separation rate by loading CdS, thus improving the photocatalytic performance of the composite.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-02-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49278113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of phosphoric acid treatment on the physical properties of zinc telluride thin films 磷酸处理对碲化锌薄膜物理性能的影响

IF 1 4区材料科学

Chalcogenide Letters Pub Date : 2023-02-23 DOI: 10.15251/cl.2023.202.113

A. Aqili, T. Abu-Omar, A. Al-Reyahi, A. Shaheen, S. Al-Omari, I. Alhagish

引用次数: 0

Structural, optical, and photocatalytic activity of ZnS:Er nanoparticles ZnS:Er纳米颗粒的结构、光学和光催化活性

IF 1 4区材料科学

Chalcogenide Letters Pub Date : 2023-02-23 DOI: 10.15251/cl.2023.202.85

B. Poornaprakash, P. Puneetha, M. P. Reddy, Y. L. Kim

引用次数: 0

Fabrication and evaluation of CuAlSe2/Si photodetector CuAlSe2/Si光电探测器的制备与评价

IF 1 4区材料科学

Chalcogenide Letters Pub Date : 2023-02-23 DOI: 10.15251/cl.2023.202.145

H. K. Hassun, B. K. Al-Maiyaly, A. H. Shaban

引用次数: 0

Tuned optoelectronic and thermoelectric properties of TIMX2 through M=Ga,In X=S,Se,Te intercalation 通过M=Ga,In = X=S,Se,Te插层调整TIMX2的光电和热电性能

IF 1 4区材料科学

Chalcogenide Letters Pub Date : 2023-02-23 DOI: 10.15251/cl.2023.202.131

I. Ur Rahman, M. Khalid, M. Aamer, F. Ali, Muhammad Umair Javed, Q. Rafiq, M. Jawad, T. Raouf Qureshi, M. Irfan, S. Azam

{"title":"Tuned optoelectronic and thermoelectric properties of TIMX2 through M=Ga,In X=S,Se,Te intercalation","authors":"I. Ur Rahman, M. Khalid, M. Aamer, F. Ali, Muhammad Umair Javed, Q. Rafiq, M. Jawad, T. Raouf Qureshi, M. Irfan, S. Azam","doi":"10.15251/cl.2023.202.131","DOIUrl":"https://doi.org/10.15251/cl.2023.202.131","url":null,"abstract":"We presents our analysis on structural electronic and optical properties of TlX and TlMX2 (M =In, Ga; X = Te, Se, S) compound, by first principle density functional theory (DFT).These chalcogenide have a place with a group of the low-dimensionals semiconductors having chains or layered design. They are of critical interested as a result of, their exceptionally anisotropics properties, semiconductivity and photoconductivity, non direct impacts in their IV qualities (counting a district of negatived differentials opposition), exchanging and memories impacts, secondly symphonious opticals age, relaxors conduct and possible application for optoelectronics devices. We reviews the crystals structured of TlMX2 compound, their transports properties below surrounding condition, test and hypothetical investigations of the electronics construction, transports properties and semiconductors metal phased transition below highly tension, and successions of temperature instigated primary phased transition with middle disproportionate state. Electronics natured of the ferroelectrics phased transition in the previously mentione mixes, just as arelaxors conduct, nano domain and conceivable event of quantums specks in dopeds and illuminated precious crystals are examined.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-02-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41998968","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0