Exceptional and innovational analysis of n-CdS/p-Si solar cells based on software packages and bias point models: insights into theoretical and experimental characteristics of fabricated solar cells

IF 1.2 4区 材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY
A. A. Hassan, S. Y. Al-Nami, H. A. Alrafai, E. Al-Amery, E. R. Shaaban, A. Qasem
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引用次数: 2

Abstract

The characteristics of a single solar cell made by CdS thin film deposition on a silicon glass substrate were estimated using simulation models in this study. An aluminum electrode was attached to a silicon wafer to produce a heterojunction, and the indium fingers were fashioned into another electrode and connected directly to the CdS layer. Simulation steps were performed using PV*SOL 3.0 software package and bias points (ISC, VOC ) models. In addition to the use of advanced programs such as MATLAB software (Shell SQ150 PV module), Mathcad 2000 program, and Origin Lab 2019 program.Simulation programs for extracting photovoltaic parameters have been executed together with the laboratory procedures. The simulation programs and experimental procedures aimed in general to know the (current-voltage) and (power-voltage) characteristics of the studied single-diode photovoltaic.
基于软件包和偏置点模型的n-CdS/p-Si太阳能电池的卓越和创新分析:对制造太阳能电池的理论和实验特性的见解
本研究利用模拟模型估计了由CdS薄膜沉积在硅玻璃衬底上制成的单个太阳能电池的特性。铝电极连接在硅晶片上形成异质结,铟指被制成另一个电极并直接连接到cd层。采用PV*SOL 3.0软件包和偏倚点(ISC、VOC)模型进行模拟。除了使用MATLAB软件(Shell SQ150光伏模块)、Mathcad 2000程序和Origin Lab 2019程序等高级程序外。模拟程序用于提取光伏参数已执行与实验室程序。仿真程序和实验程序旨在了解所研究的单二极管光伏的(电流-电压)和(功率-电压)特性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Chalcogenide Letters
Chalcogenide Letters MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED
CiteScore
1.80
自引率
20.00%
发文量
86
审稿时长
1 months
期刊介绍: Chalcogenide Letters (CHL) has the aim to publish rapidly papers in chalcogenide field of research and appears with twelve issues per year. The journal is open to letters, short communications and breakings news inserted as Short Notes, in the field of chalcogenide materials either amorphous or crystalline. Short papers in structure, properties and applications, as well as those covering special properties in nano-structured chalcogenides are admitted.
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