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Determination of microwave material properties at cryogenic temperatures 低温下微波材料性能的测定
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2025-01-15 DOI: 10.1063/5.0242356
Tomonori Arakawa, Yuto Kato, Seitaro Kon
{"title":"Determination of microwave material properties at cryogenic temperatures","authors":"Tomonori Arakawa, Yuto Kato, Seitaro Kon","doi":"10.1063/5.0242356","DOIUrl":"https://doi.org/10.1063/5.0242356","url":null,"abstract":"Quantum information processing systems rely on cryogenic microwave electronics, and printed circuit board (PCB) laminates play an essential role, including integrating quantum chips and connecting microwave circuit elements. In this Letter, we report a method for accurately determining the microwave conductivity and complex permittivity of PCB laminates over a wide temperature range, from 4 to 300 K. The use of higher-order resonant modes of a balanced-type circular disk resonator (BCDR) enables broadband measurements ranging from below 5 GHz to above 20 GHz. Furthermore, a temperature-independent determination scheme is achieved by employing a pair of BCDRs and a cryogenic calibration technique. This method is demonstrated by measuring two commercially available PCB laminates. The results indicate that while dielectric loss is monotonically reduced at cryogenic temperatures, the reduction in conductor loss is strongly suppressed by the surface roughness of the copper foil. Additionally, the obtained conductivity as a function of frequency and temperature fits well with the Gradient Model, allowing for the evaluation of the root mean square roughness parameter.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"31 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142986036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Observation of a two-dimensional topological metal in acoustic metamaterials 二维拓扑金属在声学超材料中的观察
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2025-01-15 DOI: 10.1063/5.0244137
Zhenxing Cui, Xuewei Zhang, Mian Peng, Qiang Wei, Mou Yan, Gang Chen
{"title":"Observation of a two-dimensional topological metal in acoustic metamaterials","authors":"Zhenxing Cui, Xuewei Zhang, Mian Peng, Qiang Wei, Mou Yan, Gang Chen","doi":"10.1063/5.0244137","DOIUrl":"https://doi.org/10.1063/5.0244137","url":null,"abstract":"A two-dimensional topological metal with anti-helical-like edge states has been predicted recently but has not been confirmed experimentally. In this paper, we report an experimental realization of this topological metal in acoustic metamaterial by introducing a time-reversal symmetry protected square lattice. The edge states appearing in gapless bulk bands are observed by measuring the projected dispersions and acoustic pressure field distributions. Moreover, these edge states propagate in the same direction when simultaneously exciting two sources with a fixed phase difference. Interestingly, by simply changing the coupling tubes, we realized the transformation of an acoustic topological metal to a topological insulator. Our work not only pushes forward the studies of topological metals but also inspires the design of multifunctional acoustic devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"12 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142986027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An innovative 3D-NAND design based on light-emitting cell for high reliability and low power consumption 基于发光电池的创新3D-NAND设计，具有高可靠性和低功耗
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2025-01-15 DOI: 10.1063/5.0245106
Soo Jin Kim, Younghwi Yang, Kibong Moon, Seung Jae Baik
{"title":"An innovative 3D-NAND design based on light-emitting cell for high reliability and low power consumption","authors":"Soo Jin Kim, Younghwi Yang, Kibong Moon, Seung Jae Baik","doi":"10.1063/5.0245106","DOIUrl":"https://doi.org/10.1063/5.0245106","url":null,"abstract":"The advancements in 3D-NAND technology have significantly increased the number of vertically stacked cells, which are controlled via word lines (WLs), enabling higher cell density and reducing costs. However, the increase in vertical cell layers has also introduced challenges such as higher power consumption and diminished current levels, both of which compromise the reliability of memory cells. At the same time, the demand for high cell reliability and low power consumption has been growing, driven by the expanding needs of storage applications in big data and cloud services. In this study, we propose an optically readable light-emitting memory (LEM) as a unit cell within 3D-NAND architecture. This innovative design exhibits both effective memory performance and light-emitting capabilities. Unlike conventional memory cells that require all WLs to be biased during read operation, the LEM requires only a read bias on the selected WL to detect the light intensity, which directly correlates with the stored data state. By applying voltage only to the selected WL, power consumption is reduced by approximately 45%. In addition, issues such as read disturbances and low cell currents that affect cell reliability are effectively mitigated, resulting in an expected improvement in the read window.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"12 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142986039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Size effect on Raman measured stress and strain induced phonon shifts in ultra-thin silicon film 超薄硅薄膜中拉曼测量应力和应变诱导声子位移的尺寸效应
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2025-01-15 DOI: 10.1063/5.0240392
C. Pashartis, M. J. van Setten, G. Pourtois
{"title":"Size effect on Raman measured stress and strain induced phonon shifts in ultra-thin silicon film","authors":"C. Pashartis, M. J. van Setten, G. Pourtois","doi":"10.1063/5.0240392","DOIUrl":"https://doi.org/10.1063/5.0240392","url":null,"abstract":"The fabrication of complex nano-scale structures, which is a crucial step in the scaling of (nano)electronic devices, often leads to residual stress in the different layers present. This stress gradient can change many of the material properties, leading to changes in device performance, especially in the active part of the transistor, the channel. Measuring, understanding, and, ultimately, controlling the stress fields is hence crucial for many design steps. The level of stress can in principle be measured by micro-Raman spectroscopy. This, however, requires a priori knowledge of the mechanical properties of the material. However, mechanical properties start to deviate from the bulk values when film dimensions become thinner than 5 nm. If this effect is ignored, errors of up to 400% can be introduced in the extracted stress profile. In this work, we illustrate this effect for a range of Si (001) slabs with different silicon film thicknesses, ranging from 5 to 0.7 nm and provide best practices for the proper interpretation of micro-Raman stress measurements.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"48 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142981194","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Indium alloying in ε -Ga2O3 for polarization and interfacial charge tuning ε -Ga2O3中铟合金的极化和界面电荷调谐
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2025-01-15 DOI: 10.1063/5.0245828
Yan Wang, Yizhang Guan, Chuang Zhang, Jiahe Cao, Xuanyan Chen, Qiangqiang Ouyang, Yew Hoong Wong, Guofeng Hu, Chee Keong Tan
{"title":"Indium alloying in ε -Ga2O3 for polarization and interfacial charge tuning","authors":"Yan Wang, Yizhang Guan, Chuang Zhang, Jiahe Cao, Xuanyan Chen, Qiangqiang Ouyang, Yew Hoong Wong, Guofeng Hu, Chee Keong Tan","doi":"10.1063/5.0245828","DOIUrl":"https://doi.org/10.1063/5.0245828","url":null,"abstract":"Density functional theory was utilized to assess the influence of In alloying on the spontaneous (Psp) and piezoelectric (Ppe) polarization of ε-Ga2O3 heterostructures with In concentrations ranging from 0% to 50%. The analysis demonstrated a decrease in both Psp and Ppe with an increase in In concentration, described by the equations Psp = −9.5947x + 24.81 and Ppe = −0.6217x (where x represents the In concentration, with units in μC/cm2). Additionally, the polarization-induced two-dimensional electron gas (2DEG) density within ε-InGaO/ε-Ga2O3 heterostructures was examined using a one-dimensional Schrödinger–Poisson solver. An inverse correlation was observed between 2DEG density and epitaxial thickness across all undoped In-alloyed samples. Furthermore, achieving high 2DEG densities (exceeding 1013 cm−2) is significantly facilitated by n-type doping concentrations above 1017 cm−3 in ε-InGaO. These insights not only augment the understanding of polarization effects in ε-Ga2O3 heterostructures but also provide a strategic framework for enhancing 2DEG density in ε-Ga2O3-based devices, which offers significant potential for advancing ε-Ga2O3-based high electron mobility transistors for power and RF applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"2 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142985984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Uniaxial magnetic anisotropy and weak phonon–spin coupling of a single Ni atom bonded to iridium-doped graphene 单轴磁各向异性和弱声子自旋耦合的单个Ni原子键合铱掺杂石墨烯
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2025-01-15 DOI: 10.1063/5.0248713
Yan Han, Xiaobin Wang, Suyun Wang, Jian-Guo Wan
{"title":"Uniaxial magnetic anisotropy and weak phonon–spin coupling of a single Ni atom bonded to iridium-doped graphene","authors":"Yan Han, Xiaobin Wang, Suyun Wang, Jian-Guo Wan","doi":"10.1063/5.0248713","DOIUrl":"https://doi.org/10.1063/5.0248713","url":null,"abstract":"We investigate the magnetism and vibrational mode of a single Ni atom bonded to iridium-doped graphene. It is found that the Ni atom exhibits a large magnetic anisotropy energy of 53 meV, and the magnetic anisotropy is perfectly uniaxial. There are no vibrational modes below 40 meV for the Ni atom, which disables the efficient coupling between the spin and phonon at the low magnetic field. The uniaxial magnetic anisotropy combining with the weak phonon–spin coupling effectively resists the quantum tunneling and spin flip, making the Ni atom a viable single atom magnet for information storage.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"74 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142986038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
GaOx interlayer-originated hole traps in SiO2/p-GaN MOS structures and their suppression by low-temperature gate dielectric deposition SiO2/p-GaN MOS结构中GaOx层间形成的空穴陷阱及其低温栅介电沉积抑制
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2025-01-15 DOI: 10.1063/5.0246368
Masahiro Hara, Takuma Kobayashi, Mikito Nozaki, Heiji Watanabe
{"title":"GaOx interlayer-originated hole traps in SiO2/p-GaN MOS structures and their suppression by low-temperature gate dielectric deposition","authors":"Masahiro Hara, Takuma Kobayashi, Mikito Nozaki, Heiji Watanabe","doi":"10.1063/5.0246368","DOIUrl":"https://doi.org/10.1063/5.0246368","url":null,"abstract":"In this study, we investigated the impact of SiO2 deposition temperature during plasma-enhanced chemical vapor deposition on the generation of fast hole traps, which cause surface potential pinning, in p-type GaN MOS structures. The thickness of a gallium oxide (GaOx) layer at the SiO2/GaN interface was estimated and correlated with the hole trap generation. The 200 °C-deposited SiO2/GaN MOS structures exhibited a smaller amount of fast hole traps and a thinner GaOx interlayer than the 400 °C-deposited samples. In the 200 °C-deposited samples, annealing at a temperature below 600 °C did not lead to an increase in the fast hole trap and GaOx layer thickness, while the amount of fast traps significantly increased just after 800 °C-annealing in O2 ambient, accompanied by the growth of the GaOx interlayer. These findings suggest that the major origin of fast hole traps in SiO2/GaN MOS structures is a thermally induced defect existing inside a GaOx interlayer and that the low-temperature SiO2 deposition is effective in reducing the fast traps.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"68 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142985987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Strain-induced thermal switches with a high switching ratio in monolayer boron sulfide 单层硫化硼中具有高开关比的应变诱导热开关
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2025-01-15 DOI: 10.1063/5.0241220
Zhifu Duan, Zhongke Ding, Fang Xie, Jiang Zeng, Liming Tang, Nannan Luo, Keqiu Chen
{"title":"Strain-induced thermal switches with a high switching ratio in monolayer boron sulfide","authors":"Zhifu Duan, Zhongke Ding, Fang Xie, Jiang Zeng, Liming Tang, Nannan Luo, Keqiu Chen","doi":"10.1063/5.0241220","DOIUrl":"https://doi.org/10.1063/5.0241220","url":null,"abstract":"Manipulating the thermal conductivity of materials and achieving a high thermal switching ratio is very important in fields such as thermal management and energy conversion. In this study, by utilizing first-principles calculations and semi-classical Boltzmann transport theory, we find the lattice thermal conductivity (κl) of monolayer boron sulfide (BS) can reach values as low as 0.11 Wm−1 K−1 at room temperature, significantly lower than that of well-known two-dimensional materials with low thermal conductivity such as SnSe. This phenomenon is mainly caused by the strong lattice anharmonicity, which is primarily induced by the lone electron pairs. The effect of biaxial strain on κl is further investigated. It is found that a small strain of 2% can lead to a two orders of magnitude increase in κl. Moreover, this property remains stable within the strain range of 2%–7%, making it easier to achieve experimentally. The variation of κl with strain is mainly determined by the change in phonon lifetime, which is governed by the competition between the reduction of anti-bonding valence band states and the enhanced coupling between soft optical and acoustic phonons. Our results indicate that monolayer BS is a promising candidate material for thermal switches and energy conversion devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"43 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142981193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Enhanced tunnel magnetoresistance of Fe/MgGa2O4/Fe(001) magnetic tunnel junctions by interface-tuning with atomic-scale MgO insertion layers 原子尺度MgO插入层界面调谐增强Fe/MgGa2O4/Fe（001）磁性隧道结的隧道磁阻
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2025-01-15 DOI: 10.1063/5.0247660
Rombang Rizky Sihombing, Thomas Scheike, Jun Uzuhashi, Tadakatsu Ohkubo, Zhenchao Wen, Seiji Mitani, Hiroaki Sukegawa
{"title":"Enhanced tunnel magnetoresistance of Fe/MgGa2O4/Fe(001) magnetic tunnel junctions by interface-tuning with atomic-scale MgO insertion layers","authors":"Rombang Rizky Sihombing, Thomas Scheike, Jun Uzuhashi, Tadakatsu Ohkubo, Zhenchao Wen, Seiji Mitani, Hiroaki Sukegawa","doi":"10.1063/5.0247660","DOIUrl":"https://doi.org/10.1063/5.0247660","url":null,"abstract":"We demonstrate a significant effect of atomic-scale MgO insertion layers on the tunnel magnetoresistance (TMR) in epitaxial magnetic tunnel junctions (MTJs) using a small bandgap oxide MgGa2O4. An enhanced TMR ratio of 151% at room temperature (resistance area product, RA: 23 kΩ ⋅ μm2) and 291% at 5 K (RA: 26 kΩ ⋅ μm2) were observed using 0.3 nm MgO insertion layers at the bottom and top barrier interfaces in Fe/MgGa2O4/Fe(001) MTJs with a total barrier thickness of 2.3 nm. The TMR showed a strong MgO thickness dependence. Microstructure analyses revealed that after MgO insertion, a homogeneous rock-salt structured Mg0.55Ga0.45O(001) barrier is formed, which differs from the nominal spinel crystal MgGa2O4. Elemental mapping of the MTJ showed that Ga diffusion into the adjacent Fe can be effectively suppressed while maintaining perfect lattice-matching at the Fe/barrier interfaces, thereby improving effective tunneling spin polarization through the barrier. The RA of the Mg0.55Ga0.45O (2.3 nm) MTJ is smaller than that of a comparable MgAl2O4 barrier (2.3 nm), thanks to the lower barrier height of the Mg0.55Ga0.45O as confirmed by the current–voltage characteristics.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"176 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142986026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Self-powered ultraviolet position-sensitive detectors based on PrNiO3/Nb-doped SrTiO3 p–n junctions 基于PrNiO3/ nb掺杂SrTiO3 p-n结的自供电紫外位置敏感探测器
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2025-01-15 DOI: 10.1063/5.0244086
Xianjie Wang, Chang Hu, Lingli Zhang, Qiang Fu, Lingling Tao, Pengbo Zhang, Yu Sui, Bo Song
{"title":"Self-powered ultraviolet position-sensitive detectors based on PrNiO3/Nb-doped SrTiO3 p–n junctions","authors":"Xianjie Wang, Chang Hu, Lingli Zhang, Qiang Fu, Lingling Tao, Pengbo Zhang, Yu Sui, Bo Song","doi":"10.1063/5.0244086","DOIUrl":"https://doi.org/10.1063/5.0244086","url":null,"abstract":"Position-sensitive detectors based on the lateral photovoltaic effect have been widely used in optical engineering for the measurement of position, distance, and angles. However, self-powered ultraviolet position-sensitive detectors with high sensitivity and fast response are still lacking due to the difficulty associated with the fabrication of p-type wide bandgap semiconductors, which hinders their further design and enhancement. Here, the influence of band structures and interfacial transport properties on the performance of self-powered ultraviolet position-sensitive detectors based on PrNiO3/Nb:SrTiO3p–n junctions is systematically investigated. Large position sensitivity and fast relaxation time of the lateral photovoltaic effect were observed up to 400 K in the perovskite-based ultraviolet position-sensitive detectors. Hall effect measurements revealed that the transport of photoexcited carriers occurs mainly through the interface of the PrNiO3/Nb:SrTiO3 junctions, resulting in a fast response and a stable photovoltaic effect. This study presents insights and avenues for designing self-powered perovskite oxide ultraviolet position-sensitive detectors with enhanced photoelectric performance.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"4 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142985982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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