Applied Physics Letters最新文献_第8页

Multi-band wavefront attenuation leveraging temporal modulation of metasurface via reconfigurable and scalable design 通过可重构和可扩展的设计利用超表面的时间调制的多波段波前衰减

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-05-20 DOI: 10.1063/5.0265628

Joshua Dupont, Ting Wang, Richard Christenson, Jiong Tang

引用次数: 0

Emerging thermal metrology for ultra-wide bandgap semiconductor devices 新兴的超宽带隙半导体器件热计量

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-05-20 DOI: 10.1063/5.0256723

D. Myren, F. Vásquez-Aza, J. S. Lundh, M. J. Tadjer, G. Pavlidis

{"title":"Emerging thermal metrology for ultra-wide bandgap semiconductor devices","authors":"D. Myren, F. Vásquez-Aza, J. S. Lundh, M. J. Tadjer, G. Pavlidis","doi":"10.1063/5.0256723","DOIUrl":"https://doi.org/10.1063/5.0256723","url":null,"abstract":"Ultrawide bandgap (UWBG) semiconductor materials, such as β−Ga2O3 (gallium oxide), AlN (aluminum nitride), AlxGa1−xN (AlGaN), and diamond, have emerged as essential candidates for components in high-power, high-frequency applications due to their superior electronic properties. However, with the exception of diamond and AlN, these materials present unique thermal management challenges, primarily because of their low thermal conductivities that are incapable of managing the demand for high power densities. Therefore, novel thermal management approaches that feature new device architectures are needed to prevent excessively high peak temperatures in UWBG devices. In parallel, accurate device-level thermal characterization (with high spatial/temporal resolution) is crucial to verify and optimize these designs with an overall goal to improve device performance and reliability. This paper discusses current thermal metrology techniques used for UWBG semiconductor devices covering: optical methods (Raman and thermoreflectance); electrical methods (gate resistance thermometry); and scanning probe methods (scanning thermal microscopy). More specifically, the steady-state and transient capability of each thermal metrology is explored and the limitation of each technique is highlighted. Finally, this perspective outlines potential advances in transient thermoreflectance imaging including a hyperspectral approach for nitride based heterostructures and a sub-bandgap excitation technique for gallium oxide based electronics. Additionally, the development of a future thermoreflectance microscope is presented. This microscope features high optical transmission, in the deep ultra violet wavelength range, for near bandgap thermoreflectance imaging of UWBG devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"131 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144104049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Unconventional temperature evolution of quantum oscillations in Sn-doped Bi1.1Sb0.9Te2S topological insulator 掺锡Bi1.1Sb0.9Te2S拓扑绝缘体量子振荡的非常规温度演化

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-05-19 DOI: 10.1063/5.0271389

Bruno Gudac, Petar Sačer, Filip Orbanić, Ivan Kokanović, Zoran Rukelj, Nikolina Penić, Petar Popčević, Luka Akšamović, Neven Ž. Barišić, Munisa Nurmamat, Akio Kimura, Mario Novak

{"title":"Unconventional temperature evolution of quantum oscillations in Sn-doped Bi1.1Sb0.9Te2S topological insulator","authors":"Bruno Gudac, Petar Sačer, Filip Orbanić, Ivan Kokanović, Zoran Rukelj, Nikolina Penić, Petar Popčević, Luka Akšamović, Neven Ž. Barišić, Munisa Nurmamat, Akio Kimura, Mario Novak","doi":"10.1063/5.0271389","DOIUrl":"https://doi.org/10.1063/5.0271389","url":null,"abstract":"Among various topological insulators, Sn-doped Bi1.1Sb0.9Te2S stands out for its exceptional properties. It has a wide energy gap and typically exhibits a well-isolated Dirac point and a Fermi level positioned within the gap. Here, we investigate high-quality samples that display metallic-like low-temperature resistivity attributed to surface states, pronounced quantum oscillations observable even at 40 K, and a Fermi level located approximately 100 meV above the Dirac point. In this work, we focus on the quantum oscillations that show an unusual effect: a strong temperature dependence of the oscillation frequency, which decreases by around 10% between 2 and 40 K. This reduction significantly exceeds the known effects of the Sommerfeld and topological corrections for Dirac quasi-particles, which could account for only one-eighth of the observed change. We attribute the observed effect to the temperature-induced renormalization of the bulk bandgap size due to electron–phonon interactions, which in turn affect the position of the surface Dirac point within the gap. Furthermore, we propose that in this compound, surface quantum oscillations can serve as a precise tool for investigating the low-temperature evolution of the bulk bandgap size.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"130 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144097058","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Controlled polarity inversion in GaAs/Ge/GaAs{111} heterostructures GaAs/Ge/GaAs{111}异质结构的可控极性反转

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-05-19 DOI: 10.1063/5.0271426

Akihiro Ohtake, Yusuke Hayashi

引用次数: 0

Tunable thermal expansion from positive, zero to negative in RbMgInMo3O12 with NASICON structure 具有NASICON结构的RbMgInMo3O12的正、零、负热膨胀可调

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-05-19 DOI: 10.1063/5.0265683

Tongtong Hu, Yongqiang Qiao, Ming Li, Wenshen Fan, Juan Guo, Meng Xu, Qilong Gao

{"title":"Tunable thermal expansion from positive, zero to negative in RbMgInMo3O12 with NASICON structure","authors":"Tongtong Hu, Yongqiang Qiao, Ming Li, Wenshen Fan, Juan Guo, Meng Xu, Qilong Gao","doi":"10.1063/5.0265683","DOIUrl":"https://doi.org/10.1063/5.0265683","url":null,"abstract":"Precise control of thermal expansion is important for open-framework structure materials and full of challenges. The present work designs a feasible strategy to achieve the thermal expansion from positive to zero and negative in NASICON structure molybdates by part removing Rb ions in the RbMgInMo3O12 framework. The removal of alkali metal ions Rb+ reduces the number of Rb–O bonds that contribute to positive thermal expansion along the c-axis direction and expands the average atomic volume of the framework structure. This structural modification facilitates coupling oscillations between polyhedra, significantly reducing the coefficient of thermal expansion along the c-axis. Meanwhile, the coefficient of thermal expansion of the ab-plane remains essentially unchanged. Consequently, the thermal expansion of RbxMgxIn2-xMo3O12 is effectively modulated from positive (αv = 3.3 × 10−6 K−1) to zero (αv = 1.0 × 10−6 K−1) and negative thermal expansion (αv = −2.7 × 10−6 K−1). This work not only reports the interesting zero and negative thermal expansion functional materials but also gives one way to design more negative thermal expansion materials with the open-framework structure.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"55 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144097050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhancing spintronic and optoelectronic properties of 2D and quasi-2D CsPbBr3 perovskite via lithium doping 通过锂掺杂增强二维和准二维CsPbBr3钙钛矿的自旋电子和光电子性能

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-05-19 DOI: 10.1063/5.0270446

Safieh Nazari, Fatemeh Mohammad Dezashibi, Nadia Babaei Bidmeshki

{"title":"Enhancing spintronic and optoelectronic properties of 2D and quasi-2D CsPbBr3 perovskite via lithium doping","authors":"Safieh Nazari, Fatemeh Mohammad Dezashibi, Nadia Babaei Bidmeshki","doi":"10.1063/5.0270446","DOIUrl":"https://doi.org/10.1063/5.0270446","url":null,"abstract":"Two-dimensional (2D) perovskites are emerging as promising candidates for applications in photovoltaics and scintillation due to their stability and exceptional optoelectronic properties. In this study, the impact of lithium (Li) doping on the electronic, optical, and spintronic properties of quasi-2D perovskite structures, including CsPbBr3 and (PEA)2Pb2CsBr7, was systematically investigated using density functional theory. Our results reveal that Li doping introduces significant changes in spin–orbit coupling-induced band splitting, charge distribution, and spin texture due to asymmetry. The magnitude of these alterations depends on the type of 2D structure and surface termination. Spin texture analysis revealed parallel alignment of spin vectors in the valence band maximum and conduction band minimum for all configurations, enabling spin-allowed transitions. This characteristic, along with the transition from direct to indirect band gaps, reduces charge carrier recombination rates and enhances the material's potential for scintillation applications. These findings underscore the critical role of Li doping in tuning the optoelectronic and spintronic properties of 2D and quasi-2D CsPbBr3 perovskites, paving the way for their use in radiation detection and energy conversion technologies.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"131 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144097049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Toward heralded single-photon storage via chiral cavity-enhanced spontaneous Raman scattering 通过手性腔增强自发拉曼散射实现预示的单光子存储

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-05-19 DOI: 10.1063/5.0259783

Can Sun, Yibo Hou, Xiang Chen, Tianyu Wang, Chunyao He, Yulei Geng, Yafei Wen, Shujing Li, Hai Wang

{"title":"Toward heralded single-photon storage via chiral cavity-enhanced spontaneous Raman scattering","authors":"Can Sun, Yibo Hou, Xiang Chen, Tianyu Wang, Chunyao He, Yulei Geng, Yafei Wen, Shujing Li, Hai Wang","doi":"10.1063/5.0259783","DOIUrl":"https://doi.org/10.1063/5.0259783","url":null,"abstract":"We propose a scheme of heralded storages of single photons via spontaneous Raman scattering (SRS) enhanced by a chiral standing-wave cavity, which creates a non-classically correlated pair of a spin wave and a Stokes photon (heralded photon) when a single-photon “write” pulse is applied to an atomic ensemble. In this scheme, to decrease the power of the write pulse for SRS, the write laser and the Stokes fields are aligned to propagate near-collinearly through the atoms. The short storage lifetime remains a challenge in standing-wave cavity-enhanced SRS. To prolong the storage lifetime, we achieve a long-wavelength spin-wave memory by removing the backward-scattering Stokes field from the cavity, which is realized by using non-reciprocal couplings between the Stokes fields and the atoms. In the experiment, the memory lifetime is demonstrated up to ∼100 μs, which is beyond the limitation (∼350 ns) of the storage in the atomic ensembles coupled to standing-wave cavities. We achieve a spin-wave memory for the write pulse containing a mean photon number of ∼4. The quantum correlation of the Stokes-spin-wave pairs is beyond 2, which gives strong evidence of non-classical behavior.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"11 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144097275","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Continuous zoom metalens based on the polarization state of light source in the ultraviolet band 基于紫外波段光源偏振态的连续变焦超构透镜

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-05-19 DOI: 10.1063/5.0273466

Xintong Wei, Zhongzhu Liang, Xiaoyan Shi, Fuming Yang, Siyu Guo, Yan Jia, Zhe Wu, Weizhen Liu, Jihui Jiang, Yichun Liu

{"title":"Continuous zoom metalens based on the polarization state of light source in the ultraviolet band","authors":"Xintong Wei, Zhongzhu Liang, Xiaoyan Shi, Fuming Yang, Siyu Guo, Yan Jia, Zhe Wu, Weizhen Liu, Jihui Jiang, Yichun Liu","doi":"10.1063/5.0273466","DOIUrl":"https://doi.org/10.1063/5.0273466","url":null,"abstract":"Zoom metalenses operating in the ultraviolet band have high resolution and flexibility, which can achieve accurate imaging and detection of tiny objects. It is useful for applications requiring high-intensity ultraviolet light, such as photolithography in semiconductor manufacturing, cell imaging in biomedical field, ultraviolet imaging and detection, ultraviolet catalysis, etc. However, most zoom systems need double-layer structure or complex mechanical tuning mode, which makes it difficult to achieve miniaturization due to its large volume. Here, an all-dielectric single-layer zoom metalens in the ultraviolet band is designed by changing the polarization state of the incident light. The focal length, focal depth, and focusing efficiency of the metalens are discussed when different polarized light sources are incident. The metalens uses (AlxGa1−x)2O3 material to achieve continuous focal length control at the wavelength of 365 nm, and the focusing efficiency is maintained at about 80%. The zoom metalens has the advantages of small volume, compact surface, flexible control, and fine adjustment. It is widely used in small mobile devices, precision medical systems, advanced optical components, etc.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"19 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144088100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design of Au urchin embedded in PMMA: A solution to balance photoresponse and dark-current for WS2 plasmonic photodetectors 金胆嵌入PMMA的设计：WS2等离子体光电探测器光响应和暗电流平衡的解决方案

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-05-19 DOI: 10.1063/5.0267839

Wanyu Wang, Kaixi Shi, Jinhua Li, Hui Yang, Fujun Liu, Xuan Fang

{"title":"Design of Au urchin embedded in PMMA: A solution to balance photoresponse and dark-current for WS2 plasmonic photodetectors","authors":"Wanyu Wang, Kaixi Shi, Jinhua Li, Hui Yang, Fujun Liu, Xuan Fang","doi":"10.1063/5.0267839","DOIUrl":"https://doi.org/10.1063/5.0267839","url":null,"abstract":"The local surface plasmon resonance effect has made an outstanding contribution to high-performance optoelectronic devices due to its unique light absorption ability. However, it is urgent to solve the accompanying problem of high dark-current, which is mainly caused by interface damage and charge transfer between plasma structure and material. In this work, we designed a plasma structure of Au urchin embedded in the PMMA layer to effectively balance photo-response and dark-current for WS2 plasmonic photodetectors (PDs). Herein, the non-contact “metal–semiconductor” integration prevents free electron injection and avoids the carrier lifetime extension caused by interfacial defect, which guarantees low dark-current and high carrier mobility of WS2. In particular, compared to conventional spherical metal nanoparticles, the multi-tip Au urchin allows better light absorption enhancement and accelerated carrier separation, as confirmed by finite-difference time-domain simulations. As a result, the WS2/PMMA@Au urchin plasmonic PD achieves 3.6-fold reduction in dark-current, thus obtaining a high responsivity of 533 A/W, a detectivity of 1.46 × 1010 Jones, and an ultra-fast response speed of 136 ns. Our proposed plasma structure provides a way for promoting weak-light detection and high-efficiency photoelectric conversion of low-dimensional optoelectronic devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"12 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144097055","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High hydrogen storage capacity and reversible storage/release mechanism of the BC2N monolayers via charge modulation 通过电荷调制制备BC2N单层膜的高储氢能力和可逆储放机制

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-05-19 DOI: 10.1063/5.0253386

Wentao Guo, Wenbin Chen, Zhiyong Liu, Qihua Hou, Xinxin Wang, Xinli Li, Xiaohong Li, Yongliang Yong

{"title":"High hydrogen storage capacity and reversible storage/release mechanism of the BC2N monolayers via charge modulation","authors":"Wentao Guo, Wenbin Chen, Zhiyong Liu, Qihua Hou, Xinxin Wang, Xinli Li, Xiaohong Li, Yongliang Yong","doi":"10.1063/5.0253386","DOIUrl":"https://doi.org/10.1063/5.0253386","url":null,"abstract":"Although hydrogen is an effective alternative energy source to fossil fuels, its storage is a challenge for extensive applications. The hydrogen storage performance and mechanism of the BC2N monolayers with and without modulation of strain and charge were investigated using first-principles methods. The pure BC2N monolayer achieves a high hydrogen storage gravimetric density (HSGD) of 10.95 wt. %; however, the average adsorption energy (Ead) of H2 molecules is only 0.138 eV, which immensely hinders its practical applications and motivates us to introduce clean modulations for the Ead improvement with maintaining the HSGD. Our results indicate that strain engineering has little effect on enhancing the adsorption strength of H2. However, charge engineering can efficiently modulate the interaction between H2 molecules and BC2N. When −5e charges are applied into the monolayer, Ead of H2 molecules increases to 0.225–0.460 eV. The interaction between charged BC2N and H2 molecules is of electrostatic nature. The desorption temperature of H2 molecules is between 287 and 383 K at 1 atm. The adsorption condition of 297 K∼30 atm and the desorption condition of 385 K∼1 atm for the reversible charge-modulated BC2N monolayer are preferred. Furthermore, the reversible storage/release of H2 on/from the BC2N monolayer can be easily controlled by modulating the charge states of BC2N. Combined with the analysis of desorption temperature and occupation number, our findings highlight that the BC2N monolayer with charge modulation is an ideal reversible hydrogen storage material with high HSGD and fast-kinetics.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"84 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144097059","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0