Applied Physics Letters最新文献_第8页

Fabrication and performance analysis of a collagen-integrated IGZO thin-film transistor for wide-range piezoelectric pressure biosensing 大范围压电压力生物传感用胶原集成IGZO薄膜晶体管的制备与性能分析

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-05 DOI: 10.1063/5.0348601

Denice N. Feria,Jun-Hong Lin,Jan-Tian Lian,Tai-Yuan Lin

{"title":"Fabrication and performance analysis of a collagen-integrated IGZO thin-film transistor for wide-range piezoelectric pressure biosensing","authors":"Denice N. Feria,Jun-Hong Lin,Jan-Tian Lian,Tai-Yuan Lin","doi":"10.1063/5.0348601","DOIUrl":"https://doi.org/10.1063/5.0348601","url":null,"abstract":"Biocompatible and biodegradable piezoelectric materials have emerged as compelling candidates for next-generation wearable and implantable sensing devices. However, their integration with oxide thin-film transistors (TFTs) for wide-range pressure detection and extended-gate TFT applications remains largely unexplored. In this work, we successfully developed a transparent, self-gated bio-integrated pressure sensor by incorporating piezoelectric collagen film with amorphous indium-gallium-zinc oxide (α-IGZO) TFT. The pressure-induced piezoelectric voltage generated within the collagen film directly modulates the TFT channel, producing a pressure-dependent drain current independent of any external gate bias. Fabrication parameters were preliminarily optimized, systematically determining that 40 min of radio frequency (RF) magnetron sputtering followed by annealing in a nitrogen (N2) atmosphere (50 sccm) at 400 °C yielded superior characteristics and a carrier mobility of 2.66 cm2/V s. With the incorporation of collagen, the developed bio-integrated sensor showed high-performance operation over an extremely broad pressure range of 0.49–980.86 kPa, achieving maximum responsivities of 16.29% at 98.06 kPa (Configuration I) and 6.55% at 980.86 kPa (Configuration II). Significantly, the results are remarkable and strongly consistent with prior research findings, validating the sensor's reliability and performance. These results emphasize collagen–IGZO integration as a viable and scalable strategy toward realizing transparent, wide-range, and potentially fully biodegradable pressure sensors for advanced biomedical and wearable applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"23 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149089947","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Diamond-based deep ultraviolet vortex beam generation with suppressed higher-order diffractions 抑制高阶衍射的金刚石基深紫外涡旋光束的产生

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-05 DOI: 10.1063/5.0352732

Yuanhang Wang,Chenglong Zheng,Yiming Wang,Quanping Fan,Lai Wei,Shaoyi Wang,Peinan Ni,Huaping Zang,Leifeng Cao

{"title":"Diamond-based deep ultraviolet vortex beam generation with suppressed higher-order diffractions","authors":"Yuanhang Wang,Chenglong Zheng,Yiming Wang,Quanping Fan,Lai Wei,Shaoyi Wang,Peinan Ni,Huaping Zang,Leifeng Cao","doi":"10.1063/5.0352732","DOIUrl":"https://doi.org/10.1063/5.0352732","url":null,"abstract":"Optical vortices (OVs) with unique singular phase and orbital angular momentum are widely used in various applications including particle manipulation, microscopy, and imaging scenarios. Regardless, the undesired higher-order foci introduced by the conventional vortex lens such as spiral zone plates may lead to additional artifacts and thus degrade contrast sensitivity. In this endeavor, based on the typical trapezoidal contour matrix and the neural network-based inverse design approach, we propose an innovative single-focus OV lens termed trapezoidal spiral zone plates (TSZPs) to eliminate the higher-order foci which unavoidably exist in the conventional muti-foci lens. Considering the low thermal expansion of diamond materials, we have fabricated the TSZPs sample based on high-quality single-crystal diamond substrate using electron beam lithography. To verify the stable single-focus performance even under harsh environments of such optics, a demonstration experiment in the deep ultraviolet region has also been performed. These findings provide an avenue for improving the image performance of diamond-based optics in solar-blind imaging.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"15 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149089949","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Interface engineered perpendicular magnetic anisotropy-controlled propagation of magnetic domain 界面工程垂直磁各向异性控制磁畴传播

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-05 DOI: 10.1063/5.0342804

Md Rejaul Karim,Aman Agrahari,Arun Singh Dev,Rakhul Raj,Mohd S. Sabir,Arun Jacob Mathew,Joseph Vimal Vas,Yasuhiro Fukuma,V. Raghavendra Reddy,Rohit Medwal

{"title":"Interface engineered perpendicular magnetic anisotropy-controlled propagation of magnetic domain","authors":"Md Rejaul Karim,Aman Agrahari,Arun Singh Dev,Rakhul Raj,Mohd S. Sabir,Arun Jacob Mathew,Joseph Vimal Vas,Yasuhiro Fukuma,V. Raghavendra Reddy,Rohit Medwal","doi":"10.1063/5.0342804","DOIUrl":"https://doi.org/10.1063/5.0342804","url":null,"abstract":"We report the impact of ferromagnetic layer thickness and stack configuration on the magnetic properties, perpendicular magnetic anisotropy (PMA), modified magnetization switching mechanisms, and creep regime domain wall (DW) dynamics, including their propagation velocity, in a Pt/CoFeB/Ru tri-layer system. An effective magnetic anisotropy Keff of (8.8 ± 0.15) × 105 erg/cm3 has been achieved without any post-annealing, highlighting the high-quality interface. The evaluation of PMA strength with ferromagnetic thickness and the number of stacks quantitatively reveals cumulative interfacial contributions that govern the overall magnetic anisotropy in the system. The deviation of the angular dependence of the magnetization switching field from the conventional Kondorsky model is well described using a phenomenological interpolation Kondorsky model, which signifies the role of field-induced domain-wall softening and pinning effects during the reversal process. Furthermore, polar-magneto optical Kerr effect microscopy imaging during the magnetization reversal process provides detailed insight into domain nucleation and the subsequent DW propagation driven by magnetic fields. The observations reveal well-defined, stable bubble magnetic domains that evolve coherently under the applied magnetic field. Our results demonstrate an effective approach for engineering interface-driven PMA and related magnetic phenomena in the heterostructures for next-generation low-power and DW-based spintronic devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"67 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149089838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Multi-gate organic dendritic transistors for spatiotemporal BCM learning 用于时空BCM学习的多栅极有机树突晶体管

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-05 DOI: 10.1063/5.0324733

Ying Li,Chenxing Jin,Wanrong Liu,Xiaofang Shi,Jia Sun

{"title":"Multi-gate organic dendritic transistors for spatiotemporal BCM learning","authors":"Ying Li,Chenxing Jin,Wanrong Liu,Xiaofang Shi,Jia Sun","doi":"10.1063/5.0324733","DOIUrl":"https://doi.org/10.1063/5.0324733","url":null,"abstract":"The Bienenstock–Cooper–Munro (BCM) learning rule effectively mitigates the issue of synaptic weight oversaturation in Hebbian learning via a sliding threshold dependent on historical neuronal activity. However, existing hardware implementations focus primarily on temporal history while often overlooking the spatial attenuation pivotal for signal integration. Here, we report a bio-inspired multi-gate organic dendritic transistor based on poly(3-hexylthiophene) with electrochemical gating that integrates spatiotemporal information to implement the BCM rule via its spatial architecture. By tuning the physical distances between different gates and the channel, the device mimics the nonlinear signal attenuation mechanism of biological dendrites. Beyond reproducing fundamental synaptic plasticity, the device establishes a sliding threshold mechanism for homeostatic regulation by using physical distances to modulate historical activity states. This work demonstrates the feasibility of defining synaptic historical states using spatial factors, providing a strategy for neuromorphic computing systems that combine homeostatic regulation with spatiotemporal processing.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"14 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149089884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Gd3 + -mediated crystallization homogenization in perovskite glass for high-performance x-ray scintillators and white LEDs 用于高性能x射线闪烁体和白光led的钙钛矿玻璃中Gd3 +介导的结晶均匀化

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-05 DOI: 10.1063/5.0353734

Xueqing Zhang,Pengkai Wang,Guoying Zhao,Langping Dong,Jingshan Hou,Yongzheng Fang

{"title":"Gd3\u0000 +\u0000 -mediated crystallization homogenization in perovskite glass for high-performance x-ray scintillators and white LEDs","authors":"Xueqing Zhang,Pengkai Wang,Guoying Zhao,Langping Dong,Jingshan Hou,Yongzheng Fang","doi":"10.1063/5.0353734","DOIUrl":"https://doi.org/10.1063/5.0353734","url":null,"abstract":"Metal halide perovskite nanocrystals in glass suffer from random crystallization, causing spatial and size inhomogeneity that limits performance. This study uses Gd3+ as a network modifier to disrupt the [SiO4]/[BO4] network, increasing non-bridging oxygen and reducing melt viscosity. This process suppresses random nucleation and leads to crystallization behavior that can be reasonably attributed to an Ostwald-ripening process, yielding highly uniform CsPbI3 nanocrystals, high crystallinity, and minimal defects. Structural homogenization brings notable optical improvements: the optimized CsPbI3:1Gd sample shows a threefold increase in photoluminescence quantum yield and prolonged fluorescence lifetime. As an x-ray scintillator, Gd incorporation raises glass density and effective atomic number, enabling excellent x-ray attenuation. The composite achieves a high spatial resolution of 14.6 lp/mm, a low detection limit of 1.59 mGy/s, and outstanding irradiation stability (maintaining 86% light yield of Bi4Ge3O12 crystals). In white light-emitting diodes, it delivers a high color rendering index (Ra = 87.2), a luminous efficacy of 77.9 lm/W, and 116% National Television System Committee color gamut, with stable performance under driving currents of 25–200 mA, demonstrating great potential for solid-state lighting and displays.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"4 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149089891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A continuous spiral-spring triboelectric nanogenerator for energy harvesting and self-sensing under ultra-low-frequency rotation 一种用于超低频旋转能量收集和自传感的连续螺旋弹簧摩擦电纳米发电机

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-05 DOI: 10.1063/5.0350763

Shitong Fang,Yi Guan,Jiabao Zou,Miao Chen,Liangdong Wei,Liuchao Jin,Zhihui Lai,Biao Wang,Mingjing Cai,Wei-Hsin Liao

{"title":"A continuous spiral-spring triboelectric nanogenerator for energy harvesting and self-sensing under ultra-low-frequency rotation","authors":"Shitong Fang,Yi Guan,Jiabao Zou,Miao Chen,Liangdong Wei,Liuchao Jin,Zhihui Lai,Biao Wang,Mingjing Cai,Wei-Hsin Liao","doi":"10.1063/5.0350763","DOIUrl":"https://doi.org/10.1063/5.0350763","url":null,"abstract":"Self-powered monitoring of slowly rotating components is hindered by the small relative speed and limited installation space available to conventional rotary triboelectric nanogenerators (TENGs). Here, a continuously driven unidirectional rotary TENG (CDUR-TENG) is developed by integrating a multilayer spiral-spring electrode with a ratchet-triggered energy-storage/release mechanism. During winding, the spring stores elastic energy while its adjacent triboelectric interfaces progressively separate; ratchet disengagement then initiates rapid elastic recoil and concentrated charge transfer. The device therefore decouples the electrical pulse from the slow external rotation. At 0.2 Hz, the CDUR-TENG provides a peak-to-peak open-circuit voltage of approximately 130 V and a maximum short-circuit current of 55 μA; it transfers 0.165 μC per cycle and reaches a maximum instantaneous power of 2.182 mW at 1 Hz and 1.1 MΩ. The resulting normalized power density reaches 191.4 W m−3Hz−1, at least 8.57 times that of the compared rotary harvesters. Voltage signatures further distinguish operating angle, angular overshoot, and reverse rotation, demonstrating a compact route toward self-powered condition monitoring under ultra-low-frequency rotation.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"32 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149089950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Surface magnetoelectric effects in monolayer Cr2Ge2Te6 and Cr2Ge2Te3Se3 单层Cr2Ge2Te6和Cr2Ge2Te3Se3的表面磁电效应

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-05 DOI: 10.1063/5.0348987

Lingxi Qiu,Yipeng An,Liyan Shang,Yawei Li,Jinzhong Zhang,Liangqing Zhu,Zhigao Hu,Shi-Jing Gong

引用次数: 0

Terahertz electrodynamics and kinetic inductance of disordered titanium–vanadium alloy thin films 无序钛钒合金薄膜的太赫兹电动力学和动电感

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-05 DOI: 10.1063/5.0345203

Shekhar Chandra Pandey,Shilpam Sharma,Ashish Khandelwal,M. K. Chattopadhyay

{"title":"Terahertz electrodynamics and kinetic inductance of disordered titanium–vanadium alloy thin films","authors":"Shekhar Chandra Pandey,Shilpam Sharma,Ashish Khandelwal,M. K. Chattopadhyay","doi":"10.1063/5.0345203","DOIUrl":"https://doi.org/10.1063/5.0345203","url":null,"abstract":"Disordered superconductors represent an important area in modern condensed matter physics, where superconductivity survives even in the presence of strong electron scattering and localization effects. Understanding how disorder modifies the high-frequency electrodynamic response is not only important from a physics point of view but also essential for developing next-generation quantum detectors and superconducting devices. In this work, we investigate the terahertz electrodynamics of disordered Ti40V60 alloy thin films using terahertz time-domain spectroscopy to understand the relationship between disorder, quasiparticle dynamics, and kinetic inductance. By analyzing the complex conductivity, penetration depth, and superfluid response, we observe variations in the inductive response under different deposition conditions. Unlike conventional nitride superconductors that require tightly controlled reactive growth conditions, Ti40V60 alloys provide a simpler and more adaptable route for investigating the superconducting parameters under different deposition conditions. These findings demonstrate the THz electrodynamic response of the Ti40V60 alloy thin films and highlight their potential for kinetic inductance detector applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"296 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149089836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Bio-inspired memristive plasticity enhanced by magnetic substrate design in CuO/V2O5 heterostructures for energy-efficient neuromorphic devices 利用磁性衬底设计增强CuO/V2O5异质结构的仿生忆阻塑性，用于节能神经形态器件

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-05 DOI: 10.1063/5.0320827

Kumar Kaushlendra,Davinder Kaur

{"title":"Bio-inspired memristive plasticity enhanced by magnetic substrate design in CuO/V2O5 heterostructures for energy-efficient neuromorphic devices","authors":"Kumar Kaushlendra,Davinder Kaur","doi":"10.1063/5.0320827","DOIUrl":"https://doi.org/10.1063/5.0320827","url":null,"abstract":"This study presents two adaptable resistive memory devices fabricated using DC magnetron sputtering: D1 (Ag/CuO/V2O5/NiMnIn/Ni) and D2 (Ag/V2O5/CuO/V2O5/NiMnIn/Ni), demonstrating strong potential for integration into neuromorphic computing (NC). Device D1 shows abrupt SET and analog RESET, whereas D2 exhibits gradual SET and RESET switching behavior that closely mimics biological synaptic functionality. Devices D1 and D2 are primarily influenced by the electrochemically active electrode (Ag) and oxygen vacancies. The trilayer structure of V2O5/CuO/V2O5 enhances both performance and synaptic functionality. The D2 device achieves multilevel resistive states under a magnetic field and demonstrates remarkable endurance, sustaining over 5000 cycles. Furthermore, both D1 and D2 effectively replicate the key biological synaptic functions, such as long-term potentiation (LTP) and long-term depression (LTD). Notably, D2 displays a more refined linearity in LTP/LTD characteristics compared to device D1. Additionally, D2 mimics complex neural functions, such as pair-pulse facilitation in the presence of a magnetic field and spike-timing-dependent plasticity. Artificial neural network simulations of the D2 device achieve a high recognition accuracy of 82.5%, characterized by its linear, asymmetric, and gradual weight change across multiple conductance states. These outcomes highlight the significant promise of CuO/V2O5-based devices in achieving an outstanding performance NC system.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"7 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149089840","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Proton radiation effects on hydrogen-terminated diamond field-effect transistors 质子辐射对端氢金刚石场效应晶体管的影响

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-05 DOI: 10.1063/5.0353883

Yang Liu,Xing Li,Weili Fu,Hongyue Wang,XiaoNing Zhang,Rui Wu,ZhiFeng Lei,Chao Peng,Hong Zhang,ZhanGang Zhang,Jia-Yue Yang,Teng Ma

{"title":"Proton radiation effects on hydrogen-terminated diamond field-effect transistors","authors":"Yang Liu,Xing Li,Weili Fu,Hongyue Wang,XiaoNing Zhang,Rui Wu,ZhiFeng Lei,Chao Peng,Hong Zhang,ZhanGang Zhang,Jia-Yue Yang,Teng Ma","doi":"10.1063/5.0353883","DOIUrl":"https://doi.org/10.1063/5.0353883","url":null,"abstract":"Hydrogen-terminated diamond field-effect transistors (H-diamond FETs) are promising for space electronics because of their high breakdown field, thermal stability, and radiation tolerance. However, their response to proton irradiation and the associated degradation mechanisms remain insufficiently understood. Here, depletion-mode H-diamond FETs are irradiated with 5 MeV protons at fluences of 1 × 1011, 1 × 1012, and 1 × 1013 p/cm2. At the highest fluence, the on-state current evaluated at a fixed gate overdrive decreases by approximately 43%, the peak transconductance decreases from 7.74 to 2.77 mS/mm, the subthreshold swing increases from 300 to 960 mV/dec, the gate leakage current increases by approximately four orders of magnitude, and the 99% current-stabilization time increases from 0.84 to 4.56 ms. Capacitance–voltage measurements reveal a positive flatband voltage shift consistent with radiation-induced negative trapped charge. Gate-controlled deep-level transient spectroscopy identifies three hole trap states at ET − EV = 0.354, 0.462, and 0.662 eV, including two states that emerge after irradiation and one preexisting state enhanced by irradiation. These results support two coupled degradation pathways: gate-stack ionization damage primarily affects threshold voltage, leakage, subthreshold behavior, and carrier stabilization, whereas displacement-related defects in diamond are associated with mobility and transconductance degradation.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"20 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149089843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0