Applied Physics Letters最新文献_第8页

Improved spectral filtering of broadband diffractive neural network by loss function engineering

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-02-26 DOI: 10.1063/5.0257384

Bolin Li, Guangrui Luan, Yinfei Zhu, Jinlei Fei, Min Gu, Jian Lin

引用次数: 0

Resonant inter-mode second harmonic generation by backward spin waves in YIG nano-waveguides

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-02-26 DOI: 10.1063/5.0253293

K. O. Nikolaev, S. R. Lake, B. Das Mohapatra, G. Schmidt, S. O. Demokritov, V. E. Demidov

引用次数: 0

Molecule design enabled high efficiency flexible zirconium-based lead-free perovskite scintillator

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-02-26 DOI: 10.1063/5.0251960

Yanru Guo, Baiqian Wang, Xiaoding Zhang, Kang An, Zhigang Zang, Ru Li

引用次数: 0

Strong coupling of excitons in a two-dimensional atomic crystal with quasi-bound state in the continuum supported by a single nanoparticle 二维原子晶体中激子的强耦合与单个纳米粒子支持的连续体中的准结合态

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-02-25 DOI: 10.1063/5.0250193

Qi Ding, Xun Zhou, Peng Xie, Shiyu Shen, Ling Yue, Hong Zhang, Wei Wang

{"title":"Strong coupling of excitons in a two-dimensional atomic crystal with quasi-bound state in the continuum supported by a single nanoparticle","authors":"Qi Ding, Xun Zhou, Peng Xie, Shiyu Shen, Ling Yue, Hong Zhang, Wei Wang","doi":"10.1063/5.0250193","DOIUrl":"https://doi.org/10.1063/5.0250193","url":null,"abstract":"Bound states in the continuum (BICs) supported by high-index dielectric nanoparticles have garnered significant attention due to their ability to achieve subwavelength confinement with high-quality factors, offering great potential for both fundamental studies of light–matter interactions and the development of compact photonic devices. However, the strong coupling of BICs with quantum emitters in single-particle systems has not been reported. In this paper, we propose a dielectric nanodisk integrated with a monolayer of transition metal dichalcogenides. A supercavity mode known as Friedrich–Wintgen BIC is launched in the nanodisk to enable strong coupling of BIC with WS2 excitons. We demonstrate that the reduction in coupling strength as the quasi-BIC quality factor increases is due to a decrease in the number of excitons participating in the coupling. Additionally, the coupling strength can be manipulated by adjusting the shape and aspect ratio of the nanoresonators, enabling a transition from strong to weak coupling regimes. Near-field analysis shows that the manipulation of the BIC–exciton interaction arises from the overlap of the BIC mode's near-field with the excitons. Our findings offer a promising strategy for manipulating light–matter interactions and enhance the potential applications of BIC resonances in photonics.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"15 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143495503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Growth of nitrogen-doped (010) β-Ga2O3 by plasma-assisted molecular beam epitaxy using an O2/N2 gas mixture

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-02-25 DOI: 10.1063/5.0250037

Steve Rebollo, Yizheng Liu, Carl Peterson, Sriram Krishnamoorthy, James S. Speck

{"title":"Growth of nitrogen-doped (010) β-Ga2O3 by plasma-assisted molecular beam epitaxy using an O2/N2 gas mixture","authors":"Steve Rebollo, Yizheng Liu, Carl Peterson, Sriram Krishnamoorthy, James S. Speck","doi":"10.1063/5.0250037","DOIUrl":"https://doi.org/10.1063/5.0250037","url":null,"abstract":"In this study, we report on the intentional nitrogen doping of plasma-assisted MBE (PAMBE)-grown (010) β-Ga2O3 films by generating the growth plasma with an O2 and N2 gas mixture. A nitrogen doping range of 1.3 × 1018 to 4.5 × 1019 cm−3 was achieved. The nitrogen doping profiles have top-hat shapes with sharp turn-on and turn-off. Nitrogen doping was found to have a negligible impact on surface morphology. Nitrogen incorporation was unaffected by gallium flux and growth temperatures over a large growth window. An incorporation dependence on plasma power and total gas flow rate was observed. This was attributed to the N2 triple bond strength compared to the O2 double bond strength, which makes N2 harder to crack in the plasma source. Increasing the plasma power from 140 to 230 W increased nitrogen incorporation by 1.6×, while increasing the total gas flow rate from 0.8 to 2.0 sccm decreased incorporation by 3.2×. The compensation effect of nitrogen was verified by characterizing effective carrier concentration in conducting tin and nitrogen co-doped films. A 2.1 V built-in voltage was extracted from a nitrogen-doped, n− junction device using CV measurements. The device was found to exhibit rectifying behavior with a 100 A/cm2 current density at 2.9 V. The junction demonstrated here can play a key role in field management and electrostatic engineering for β-Ga2O3-based power devices. Overall, the controllability of PAMBE nitrogen doping and the properties of nitrogen-doped films suggest PAMBE-grown, nitrogen-doped layers have promising power device applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"45 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143495511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Piezo-strain induced nonvolatile control of magnetic skyrmion nonlinear dynamics for artificial synapse device applications

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-02-25 DOI: 10.1063/5.0250044

Jiawei Wang, Xin Wang, Yiting Li, Guoliang Yu, Yang Qiu, Yan Li, Mingmin Zhu, Hao-Miao Zhou

{"title":"Piezo-strain induced nonvolatile control of magnetic skyrmion nonlinear dynamics for artificial synapse device applications","authors":"Jiawei Wang, Xin Wang, Yiting Li, Guoliang Yu, Yang Qiu, Yan Li, Mingmin Zhu, Hao-Miao Zhou","doi":"10.1063/5.0250044","DOIUrl":"https://doi.org/10.1063/5.0250044","url":null,"abstract":"High-performance artificial synaptic devices that emulate the functions of biological synapses are crucial for advancing energy-efficient brain-inspired computing systems. Current studies predominantly focus on memristive devices, which achieve synaptic functions through nonvolatile electric current-assisted carrier modulation. However, these methods often suffer from excessive energy consumption. Here, a type of low-energy-consumption artificial synapse based on strain-mediated electric-field control of magnetic skyrmion's radius is demonstrated, where the energy consumption is 10 fJ per state and the non-volatility is achieved by local ferroelectric domain switching under bipolar electric fields. The proposed skyrmion-based synaptic device can replicate essential synaptic behaviors, including long-term potentiation (LTP), long-term depression (LTD), paired-pulse facilitation, paired-pulse depression, and spiking-time-dependent plasticity, aligning it closely with the biological synaptic system. The synaptic weight change and non-linearity of the artificial synapse are emulated by modulating the magnetic skyrmion's radius through precisely engineering the applied electric-field pulses. Simulation using the Modified National Institute of Standards and Technology database reveals that the pattern recognition rate decreases exponentially with increasing LTP/LTD non-linearity, quantifying the effect of the LTP/LTD non-linearity on the pattern recognition rate. This work underscores the potential of strain-mediated electric-field control of single skyrmion's radius as a groundbreaking approach for developing high density and low-energy consumption artificial synaptic devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"82 1 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143495515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-frequency/high-field electron paramagnetic resonance generalized spectroscopic ellipsometry characterization of Cr3+ in β -Ga2O3

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-02-25 DOI: 10.1063/5.0255802

Viktor Rindert, Zbigniew Galazka, Mathias Schubert, Vanya Darakchieva

{"title":"High-frequency/high-field electron paramagnetic resonance generalized spectroscopic ellipsometry characterization of Cr3+ in β -Ga2O3","authors":"Viktor Rindert, Zbigniew Galazka, Mathias Schubert, Vanya Darakchieva","doi":"10.1063/5.0255802","DOIUrl":"https://doi.org/10.1063/5.0255802","url":null,"abstract":"Electron paramagnetic resonance of Cr3+ ions in β-Ga2O3 is investigated using terahertz spectroscopic ellipsometry under magnetic field sweeping, a technique that enables the polarization resolving capabilities of ellipsometry for magnetic resonance measurements. We employed a single-crystal chromium-doped β-Ga2O3 sample, grown by the Czochralski method, and performed ellipsometry measurements at magnetic field strengths ranging from 2 to 8 T, at frequencies from 82 to 125 and 190 to 230 GHz, and at a temperature of 15 K. Analysis of the frequency-field diagrams derived from all Mueller matrix elements allowed us to differentiate between the effects of electron spin Zeeman splitting and zero-field splitting and to accurately determine the anisotropic Zeeman splitting g-tensor and the zero-field splitting parameters. Our results confirm that Cr3+ ions predominantly substitute into octahedral gallium sites. Line shape analysis of Mueller matrix element spectra using the Bloch–Brillouin model provides the spin volume concentration of Cr3+ sites, showing very good agreement with results from chemical analysis by inductively coupled plasma-optical emission spectroscopy and suggesting minimal occupation of sites with inactive electron paramagnetic resonance. This study enhances our understanding of the magnetic and electronic properties of chromium-doped β-Ga2O3 and demonstrates the effectiveness of high-frequency/high-field electron paramagnetic resonance generalized spectroscopic ellipsometry for characterizing defects in ultrawide-bandgap semiconductors.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"29 4 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143495516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Modulation of nonlinearity and asymmetry in a spin–orbit torque driven artificial synapse

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-02-25 DOI: 10.1063/5.0248325

Arun Jacob Mathew, John Rex Mohan, Chisato Yamanaka, Kazuki Shintaku, Mojtaba Mohammadi, Hiroyuki Awano, Hironori Asada, Yasuhiro Fukuma

{"title":"Modulation of nonlinearity and asymmetry in a spin–orbit torque driven artificial synapse","authors":"Arun Jacob Mathew, John Rex Mohan, Chisato Yamanaka, Kazuki Shintaku, Mojtaba Mohammadi, Hiroyuki Awano, Hironori Asada, Yasuhiro Fukuma","doi":"10.1063/5.0248325","DOIUrl":"https://doi.org/10.1063/5.0248325","url":null,"abstract":"Unconventional computing schemes inspired by biological neural networks are being explored with ever growing interest to eventually replace traditional von Neumann architecture-based computation. Realization of such schemes necessitates the development of device analogs to biological neurons and synapses. Particularly, in spin-based artificial synapses, the spin–orbit torque (SOT) can be utilized for changing between multiple resistance states of the synapse. In this work, we demonstrate synaptic behavior, namely long-term potentiation and long-term depression in a ferrimagnet (GdFe) via SOT generated using a heavy metal (Pt). The dependence of the synapse-like output on the input parameters is extensively investigated. Synaptic arrays based on experimental results are simulated and used to perform the classification of a handwritten digit dataset. Correlating the classification accuracy with the experimentally observed synaptic behavior, the performance of the synapse is found to depend on the critical switching currents. Understanding the correlation between the input parameters and synaptic performance could accelerate the development of artificial spintronic synapses possessing high operation speed, nonvolatility and plasticity, thereby enabling efficient compute in-memory systems in the near future.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"7 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143495517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A high-T c superconducting diode with large current carrying capacity

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-02-25 DOI: 10.1063/5.0248777

J. M. Brooks, R. Mataira, T. Simpson, R. A. Badcock, C. W. Bumby

{"title":"A high-T c superconducting diode with large current carrying capacity","authors":"J. M. Brooks, R. Mataira, T. Simpson, R. A. Badcock, C. W. Bumby","doi":"10.1063/5.0248777","DOIUrl":"https://doi.org/10.1063/5.0248777","url":null,"abstract":"Superconducting diodes enable lossless current flow in one direction and could serve in a variety of applications similar to their semiconductor counterparts, such as current rectification, temperature sensing, and logic circuits. However, no superconducting diodes reported in the literature have a forward current carrying capacity exceeding 1 A, and hence are not suitable for use in superconducting power applications. Here, we present a high-Tc superconducting diode that leverages permanent magnets to induce an asymmetry in the critical current of a superconducting coated conductor upon current reversal. The magnets are arranged to replicate the self-field of the conductor at Ic, causing constructive or destructive interference with the transport current's self-field depending on the current direction. This interference generates asymmetric internal magnetic field distributions, leading to the directional suppression of the critical current density and a diode effect. We demonstrate ΔIc values &gt; 150 A and a half-wave transformer rectifier using a single high-Tc flux diode submerged in liquid nitrogen, which rectifies 30 A into a 220 μH superconducting magnet.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"103 50 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143495508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Valley polarization in two-dimensional zero-net-magnetization magnets

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-02-25 DOI: 10.1063/5.0250823

San-Dong Guo

引用次数: 0