Applied Physics Letters最新文献_第8页

Direct observation of electronic bandgap and hot carrier dynamics in GeAs semiconductor 直接观测 GeAs 半导体中的电子带隙和热载流子动力学

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-11-01 DOI: 10.1063/5.0233111

Zailan Zhang, Jiuxiang Zhang, Gangqiang Zhou, Jiyuan Xu, Ian-Evan Michel, Yannick Dappe, Xiao Zhang, Hamid Oughaddou, Weiyan Qi, Evangelos Papalazarou, Luca Perfetti, Zhesheng Chen, Azzedine Bendounan, Marino Marsi

{"title":"Direct observation of electronic bandgap and hot carrier dynamics in GeAs semiconductor","authors":"Zailan Zhang, Jiuxiang Zhang, Gangqiang Zhou, Jiyuan Xu, Ian-Evan Michel, Yannick Dappe, Xiao Zhang, Hamid Oughaddou, Weiyan Qi, Evangelos Papalazarou, Luca Perfetti, Zhesheng Chen, Azzedine Bendounan, Marino Marsi","doi":"10.1063/5.0233111","DOIUrl":"https://doi.org/10.1063/5.0233111","url":null,"abstract":"Germanium arsenide (GeAs) is a layered semiconductor with remarkably anisotropic thermoelectric and optical properties and a promising candidate for multifunctional devices based on in-plane polarization dependent response. Understanding the underlying mechanism of such devices requires knowledge of GeAs electronic band structure and of the hot carrier dynamics in its conduction band, whose details are still unclear. In this work, we investigate the properties of occupied and photoexcited states of GeAs, by combining scanning tunneling spectroscopy, angle-resolved photoemission spectroscopy (ARPES), and time-resolved ARPES. We find that GeAs is an ∼0.8 eV indirect gap semiconductor, for which the conduction band minimum (CBM) is located at the Γ¯ point while the valence band maximum is out of Γ¯. A Stark broadening of the valence band is observed immediately after photoexcitation, which can be attributed to the effects of the electrical field at the surface induced by inhomogeneous screening. Moreover, the hot electron relaxation time of 1.56 ps is down to the CBM, which is dominated by electron–phonon coupling. Besides their relevance for our understanding of GeAs, these findings present general interest for the design of high performance thermoelectric and optoelectronic devices based on 2D semiconductors.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":4.0,"publicationDate":"2024-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142563080","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Nonlinear power-law creep of cell cortex: A minimal model 细胞皮层的非线性幂律蠕变：最小模型

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-10-31 DOI: 10.1063/5.0235734

Shao-Heng Li, Guang-Kui Xu

引用次数: 0

A point of view of the elastocaloric effect associated with 7M and 5M modulated martensite in Ni–Mn–Ga alloys 与镍-锰-镓合金中的 7M 和 5M 调制马氏体相关的弹性效应观点

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-10-31 DOI: 10.1063/5.0236129

M. López-Medina, H. Flores-Zúñiga, D. E. Soto-Parra, D. Ríos-Jara

引用次数: 0

Superconducting (Ba,K)Fe2As2 epitaxial films on single and bicrystal SrTiO3 substrates 单晶和双晶 SrTiO3 基底上的超导（Ba,K）Fe2As2 外延薄膜

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-10-31 DOI: 10.1063/5.0233645

Dongyi Qin, Zimeng Guo, Chiara Tarantini, Satoshi Hata, Michio Naito, Akiyasu Yamamoto

{"title":"Superconducting (Ba,K)Fe2As2 epitaxial films on single and bicrystal SrTiO3 substrates","authors":"Dongyi Qin, Zimeng Guo, Chiara Tarantini, Satoshi Hata, Michio Naito, Akiyasu Yamamoto","doi":"10.1063/5.0233645","DOIUrl":"https://doi.org/10.1063/5.0233645","url":null,"abstract":"The realization of single crystal and bicrystal films of superconducting materials is of great interest because they allow the investigation of the intragrain performance as well as the understanding of potential limitations in the grain boundary transparency. For many years, the realization of a high-quality (Ba,K)Fe2As2 film has been challenging. Here, the realization of (Ba,K)Fe2As2 epitaxial thin films on single crystal SrTiO3(001) and [001]-tilt-type SrTiO3 bicrystal substrates with high superconducting properties is demonstrated. The epitaxial growth of (Ba,K)Fe2As2 was enabled by implementing an undoped BaFe2As2 buffer layer between the SrTiO3 substrate and (Ba,K)Fe2As2 film. The film exhibits a high Tc of 38.0 K and an extremely high Jc of 14.3 MA/cm2 at 4.2 K. Artificial grain boundaries of (Ba,K)Fe2As2 were also successfully achieved on bicrystals with misorientation angles up to 36.8° by the same preparation methods. The artificial grain boundaries exhibited an identical Tc of 38.0 K and an excellent transfer of the grain orientation from the bicrystal substrates with high crystallinity comparable to that of the high-quality Ba(Fe,Co)2As2 films. This enables the investigation of the intrinsic (Ba,K)Fe2As2 grain boundary nature, which will clarify its potential for superconducting applications, like Josephson junctions, wires, and magnets.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":4.0,"publicationDate":"2024-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142562118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Controllable multilevel quantized conduction states in vertical CBRAM using Cu-nanodot ion source 利用铜纳米点离子源实现垂直 CBRAM 中的可控多级量化传导状态

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-10-31 DOI: 10.1063/5.0221485

Sunhyeong Lee, Chuljun Lee, Ohhyuk Kwon, Seongjae Heo, Hyunsang Hwang

{"title":"Controllable multilevel quantized conduction states in vertical CBRAM using Cu-nanodot ion source","authors":"Sunhyeong Lee, Chuljun Lee, Ohhyuk Kwon, Seongjae Heo, Hyunsang Hwang","doi":"10.1063/5.0221485","DOIUrl":"https://doi.org/10.1063/5.0221485","url":null,"abstract":"Restricting the injection of cations is crucial for implementing precise quantized conduction (QC) during the multi-level operation of conductive-bridge random-access memory (CBRAM). This study proposes a method that controls ion supply by confining the Cu ion source to 0D in a vertical structure. This confinement enables sophisticated filament control for multilevel operation. Cu nanodots are formed between the W electrodes, with W and Cu serving as the electron and ion sources for the conducting filament, respectively. When the Cu filament is confined to 0D, the controllability of the QC implementation is better than that in cases where the filament is restricted to 1D or bulk Cu. The highest number of quantized levels was observed for 0D Cu, which can be attributed to the synergistic effects of filament confinement and the decrease in the Cu electrochemical reaction rate. Furthermore, we analyzed the switching mechanism of the Cu nanodots by employing the activation energy extracted by the slope of the voltage-time dilemma. Our results demonstrate the effectiveness of confining the ion source to 0D for achieving precise filament control in CBRAM and enabling its applicability to vertical structures.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":4.0,"publicationDate":"2024-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142562120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Modeling the effects of crystallite alignment on birefringent light scattering in transparent polycrystalline aluminum oxide 模拟晶体排列对透明多晶氧化铝双折射光散射的影响

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-10-31 DOI: 10.1063/5.0232690

Wenbo Zhou, Meir H. Shachar, Javier E. Garay

引用次数: 0

650 V vertical Al0.51Ga0.49N power Schottky diodes 650 V 垂直 Al0.51Ga0.49N 功率肖特基二极管

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-10-30 DOI: 10.1063/5.0233479

Hang Chen, Shuhui Zhang, Tianpeng Yang, Tingting Mi, Xiaowen Wang, Chao Liu

引用次数: 0

Orthogonal spin–orbit torque-induced deterministic switching in NiO 镍氧化物中正交自旋轨道转矩诱导的确定性开关

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-10-30 DOI: 10.1063/5.0223716

Yixiao Qiao, Zhengde Xu, Zhuo Xu, Yumeng Yang, Zhifeng Zhu

引用次数: 0

Split ring resonators and composite FR4 substrate for analysis and design of tri-band monopole antenna 用于分析和设计三频单极子天线的分环谐振器和复合 FR4 衬底

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-10-30 DOI: 10.1063/5.0237840

S. Prasad Jones Christydass, G. Navaneethakrishnan, R. Palanisamy, C. Ahamed Saleel, Beena Stanislaus Arputharaj

{"title":"Split ring resonators and composite FR4 substrate for analysis and design of tri-band monopole antenna","authors":"S. Prasad Jones Christydass, G. Navaneethakrishnan, R. Palanisamy, C. Ahamed Saleel, Beena Stanislaus Arputharaj","doi":"10.1063/5.0237840","DOIUrl":"https://doi.org/10.1063/5.0237840","url":null,"abstract":"This paper presents the design, optimization, and analysis of a tri-band monopole antenna tailored for wireless communication, constructed with a composite FR4 substrate and incorporating split ring resonators (SRRs). The antenna is fabricated on a 19-mm-wide, 31-mm-long FR4 substrate featuring a ground structure integrated with SRRs. Through parameter analysis and optimization, the antenna achieves resonance at 2.3, 4.8, and 7 GHz, catering to diverse wireless communication standards. The use of composite FR4 material ensures enhanced performance. Post-fabrication measurements reveal that the antenna's s11, gain, directivity, and E-plane and H-plane patterns are consistent with simulations. Its compact size, stable radiation patterns, dual-band functionality, excellent impedance matching, and wide bandwidth make it ideal for the industrial, scientific, and medical sectors, as well as other wireless communication applications. This study marks a significant step forward in multi-band antenna technology using composite materials, offering promising solutions for future wireless communication needs.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":4.0,"publicationDate":"2024-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142556018","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The effect of magnetic nanofilm morphology on spintronic terahertz emission performance 磁性纳米薄膜形态对自旋电子太赫兹发射性能的影响

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-10-30 DOI: 10.1063/5.0221778

Zejun Ren, Shaojie Liu, Mingcong Dai, Jiaqi Wang, Zehao Yang, Mingxuan Zhang, Xinxiong Chen, Songbo Cui, Peilin Chen, Zhaofeng Yu, Xiaojun Wu

{"title":"The effect of magnetic nanofilm morphology on spintronic terahertz emission performance","authors":"Zejun Ren, Shaojie Liu, Mingcong Dai, Jiaqi Wang, Zehao Yang, Mingxuan Zhang, Xinxiong Chen, Songbo Cui, Peilin Chen, Zhaofeng Yu, Xiaojun Wu","doi":"10.1063/5.0221778","DOIUrl":"https://doi.org/10.1063/5.0221778","url":null,"abstract":"Femtosecond laser-driven spintronic terahertz (THz) emitters based on magnetic nanofilms are poised to be the next-generation mainstream THz radiation devices due to their low cost, high performance, ultra-broadband, and easy integration. The radiation performance of spintronic THz emitters is related to the material characteristics, heterostructure interfaces, pump laser, and magnetic field intensity. Additionally, the THz emission performance is greatly reliant on the material surface morphology. Here, we employed ultrafast THz scattering-type scanning near-field optical microscopy with nanoscale spatial resolution to obtain the static THz scattering nano-imaging of ferromagnetic/antiferromagnetic heterostructures (W/Co20Fe60B20/IrMn3). We established the relationship between surface morphology and THz scattering intensity. Utilizing laser-induced THz emission technology, we achieve injection and detection of nanoscale ultrafast spin current without the external magnetic field. The strong consistency of the THz emission nanoscopy with the atomic force microscopy topography demonstrates that the sample surface morphology is critical to the THz radiation performance. This study serves as a valuable reference for the further optimization of spintronic THz emitters and promotes the development of high-performance, strong-field spintronic THz sources.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":4.0,"publicationDate":"2024-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142556023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0