Applied Physics Letters最新文献_第8页

The bimetallic MXene/Fe3O4 composites with dielectric-magnetic synergy loss enable robust electromagnetic wave absorption 具有介电-磁协同损失的双金属MXene/Fe3O4复合材料具有较强的电磁波吸收能力

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-09-30 DOI: 10.1063/5.0289514

Nandong Deng, Jun Li, Yang Hong, Zeyang Zhang, Zegeng Chen, Zhengyu Zhang, Tongtong Xu, Yang Li, Zhongxiang Zhou

{"title":"The bimetallic MXene/Fe3O4 composites with dielectric-magnetic synergy loss enable robust electromagnetic wave absorption","authors":"Nandong Deng, Jun Li, Yang Hong, Zeyang Zhang, Zegeng Chen, Zhengyu Zhang, Tongtong Xu, Yang Li, Zhongxiang Zhou","doi":"10.1063/5.0289514","DOIUrl":"https://doi.org/10.1063/5.0289514","url":null,"abstract":"The proliferation of 5G technology has intensified electromagnetic wave (EMW) pollution, promoting the development of MXene absorbers for addressing the above issues. Ti3C2Tx MXene has attracted intensive attention due to its layered structure and superior conductivity. However, one MXene type and its single loss mechanism become frustrated under the increasingly complex electromagnetic environments. Herein, bimetallic solid-solution MXenes, decorated with Fe3O4 nanoparticles via electrostatic self-assembly, were synthesized. The solid solution of Nb/V induces the lattice distortion and alters atomic distribution, generating vacancy defects to serve as polarization centers. Theoretical calculation revealed that the form of electric dipole, resulting from charge density difference, significantly enhances polarization loss. The Fe3O4 incorporation optimizes impedance matching and introduces magnetic loss. Benefiting from synergy loss mechanisms, TiVCTx/Fe3O4 demonstrates the robust electromagnetic wave absorption (EMA) performance at a mass ratio of 1:1, achieving an effective absorption bandwidth (EAB) of 4.56 GHz at a thin thickness of 1.3 mm and the minimum reflection loss (RLmin) achieved at −43.59 dB. Notably, composites show an EAB of 1.36 GHz among low frequencies (3.92–5.28 GHz). This research provides a pathway for exploring bimetallic MXene, revealing its substantial potential for EMA applications in the context of the 5G era.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"65 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145195014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Temperature-activated switchable nonreciprocal thermal emitter via magneto-optical quasi-BIC coupling 基于磁光准bic耦合的温度激活可切换非互易热发射极

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-09-29 DOI: 10.1063/5.0277475

Jianshu Wang, Yuwei Sun, Kezhang Shi, Chenglong Zhou, Yicong Yin, Yijun Shen, Xiaobo Xing

{"title":"Temperature-activated switchable nonreciprocal thermal emitter via magneto-optical quasi-BIC coupling","authors":"Jianshu Wang, Yuwei Sun, Kezhang Shi, Chenglong Zhou, Yicong Yin, Yijun Shen, Xiaobo Xing","doi":"10.1063/5.0277475","DOIUrl":"https://doi.org/10.1063/5.0277475","url":null,"abstract":"Non-Kirchhoff states of thermal radiation, which benefit from their nontrivial nonreciprocal emissivity properties, are crucial for addressing pressing challenges such as global climate change, energy crisis, and overheating of electronic devices. However, significant challenges remain in the quest to develop a design paradigm characterized by nonreciprocal switching to facilitate transformative breakthroughs in non-Kirchhoff radiative devices. Here, we develop a temperature-activated switchable nonreciprocal thermal emitter comprising a silicon cylindrical grating array on InAs/VO2 films, which enables switchable nonreciprocal thermal radiation for TE modes at λ = 9.481 µm and θ = ±10°, resulting in a remarkable nonreciprocity of 0.45, a high Q-factor of ≈403 for the emissivity, and a switch ratio of 146. Leveraging magneto-optical quasi-bound states in the continuum coupling and VO2's phase transition, the structure achieves robust control: (i) a nonreciprocal “on” state with enhanced light–matter interactions in VO2's insulating phase, and (ii) a nonreciprocal “off” state with negligible effects in its metallic phase for both TE and TM modes, making it a polarization-selective emitter with switchable nonreciprocal thermal radiation. This work bridges the gap in switchable nonreciprocal thermal radiation research and provides insights into the design of practical nonreciprocal thermal structures, with applications in thermal camouflage, energy conversion, and thermal management.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"103 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145189502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-resolution optical microscopy in complex environments with a single-pixel detector 高分辨率光学显微镜在复杂的环境与单像素探测器

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-09-29 DOI: 10.1063/5.0289290

Tianshun Zhang, Yang Peng, Wen Chen

引用次数: 0

Enhanced resistance switching ratio of Hf0.5Zr0.5O2-based film through reducing oxygen vacancy concentration 通过降低氧空位浓度，提高了hf0.5 zr0.5 o2基薄膜的电阻开关比

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-09-29 DOI: 10.1063/5.0285927

Hong Wei Wang, Jin Peng Cao, Wei Ye Deng, Jun Kun Wu, Li Hong Yang, Zhang Jian Zhou, Chun Feng, Yang Bai, Qi Liang Li, Jun Miao

{"title":"Enhanced resistance switching ratio of Hf0.5Zr0.5O2-based film through reducing oxygen vacancy concentration","authors":"Hong Wei Wang, Jin Peng Cao, Wei Ye Deng, Jun Kun Wu, Li Hong Yang, Zhang Jian Zhou, Chun Feng, Yang Bai, Qi Liang Li, Jun Miao","doi":"10.1063/5.0285927","DOIUrl":"https://doi.org/10.1063/5.0285927","url":null,"abstract":"The resistance switching mechanism in HfO2-based resistive random access memory (RRAM) typically involves conductive filaments formed by oxygen vacancies. The inherent characteristics of this mechanism lead to low reliability and elevated off-state current in HfO2-based RRAM devices. Herein, the oxygen vacancy concentration in Hf0.5Zr0.5O2 film was decreased through the acceptor (La3+)–donor (Ta5+) co-doping strategy, which reduced off-state current from 7.6 × 10−3 A/cm2 to 3.6 × 10−6 A/cm2 at 0.5 V, increased the resistance switching ratio from 6.2 × 102 to 2.4 × 104, and improved switching stability. Following the doping of Hf0.5Zr0.5O2 film with La3+ and Ta5+, the resistance switching mechanism changes from oxygen vacancy conductive filaments to the electron capture/de-capture mechanism. The conduction mechanism of the high resistance state transitions from Schottky emission to space charge limited current, while that of the low resistance state transitions from Ohmic conduction to Fowler–Nordheim tunneling. X-ray photoelectron spectroscopy has shown that the co-doping approach decreases the concentration of oxygen vacancies, which in turn influences the alterations in the resistance switching performances and mechanisms. This study presents an effective approach for the design and improvement of HfO2-based RRAM, while also advancing the comprehension of the resistance switching mechanism influenced by doping in HfO2-based films.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"118 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145182789","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Essential metrics for measuring indoor photovoltaics 测量室内光伏的基本指标

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-09-29 DOI: 10.1063/5.0287691

Muhammad Ahsan Saeed

引用次数: 0

Rashba effect in 2D Janus group-III chalcogenides: Control via atomic-scale structural engineering 二维Janus iii族硫族化合物中的Rashba效应：通过原子尺度结构工程控制

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-09-29 DOI: 10.1063/5.0286633

Ziyu Xing, Qikun Tian, Jinghui Wei, Haipeng Wu, Guangzhao Qin, Zhenzhen Qin

{"title":"Rashba effect in 2D Janus group-III chalcogenides: Control via atomic-scale structural engineering","authors":"Ziyu Xing, Qikun Tian, Jinghui Wei, Haipeng Wu, Guangzhao Qin, Zhenzhen Qin","doi":"10.1063/5.0286633","DOIUrl":"https://doi.org/10.1063/5.0286633","url":null,"abstract":"Tunable Rashba systems hold significant potential for electron spin manipulation in spintronics and for exploring quantum effects. However, the modulation of the Rashba effect is constrained either by the material's inherent properties or the ineffectiveness of controlling methods. Herein, we perform a comprehensive study of the electronic structure and Rashba effect in two-dimensional (2D) Janus group-III chalcogenide systems based on first-principles calculations and suggest that highly efficient Rashba effect modulation can be directly achieved via targeted geometric structure alteration while preserving its semiconductor properties. Specifically, isolated Rashba splitting is observed around the Fermi level of most 2D Janus group-III chalcogenides with a bandgap range of 1.22 to 2.38 eV and Rashba constants αR ranging from 0.18 to 0.79 eVÅ. Among these Rashba semiconductors, the αR shows a nearly linear increase under biaxial or uniaxial tensile strains and, in most cases, exceeds 1 eVÅ, whereas it exhibits a moderate response to external electric fields. Notably, when 2D materials with larger-lattice constants are used to form heterostructures with Rashba semiconductors, the αR exhibits an increasing trend similar to that observed in strained cases. Efficient Rashba effect control through strains or heterostructures results from local structural changes, enhancing orbital hybridization with one crucial orbital responsible for the splitting, and thereby leading to an increased Rashba constant. Our work showcases a Rashba effect modulation strategy achieved via targeted geometric structure engineering, which can be generalized to other Rashba systems given specific conditions, thereby offering crucial insights for advancing the development of controllable spintronic devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"29 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145182849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Record-high electron mobility at near pinch-off in N-polar GaN HEMT structures grown on on-axis N-polar GaN substrates by plasma-assisted molecular beam epitaxy 利用等离子体辅助分子束外延技术，在轴向n极GaN衬底上生长的n极GaN HEMT结构中，在近掐断处获得了创纪录的高电子迁移率

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-09-29 DOI: 10.1063/5.0258504

Oguz Odabasi, Md Irfan Khan, Sandra Diez, Kamruzzaman Khan, Tanmay Chavan, Elaheh Ahmadi

{"title":"Record-high electron mobility at near pinch-off in N-polar GaN HEMT structures grown on on-axis N-polar GaN substrates by plasma-assisted molecular beam epitaxy","authors":"Oguz Odabasi, Md Irfan Khan, Sandra Diez, Kamruzzaman Khan, Tanmay Chavan, Elaheh Ahmadi","doi":"10.1063/5.0258504","DOIUrl":"https://doi.org/10.1063/5.0258504","url":null,"abstract":"In power amplifiers, achieving maximum drain efficiency requires deeper class-AB operation. Class-AB devices are biased near pinch-off, where the charge density is low. N-polar gallium nitride (GaN) high electron mobility transistors (HEMTs) have demonstrated exceptional performance, but they face a challenge of reduced electron mobility at low charge densities near pinch-off. This contrasts with conventional Ga-polar GaN HEMTs, where electron mobility increases as charge density decreases. In this work, we present an increase in electron mobility as charge density was reduced by applying a higher gate reverse bias in N-polar HEMT structures. The N-polar GaN HEMT structures presented here were grown on low-dislocation density on-axis N-polar GaN substrate using plasma-assisted molecular beam epitaxy (PAMBE). Epi-structures with different barrier materials, including InAlN and AlN/GaN digital alloy, were investigated. Electron mobility as a function of 2-dimensional electron gas (2DEG) density was extracted using a combination of the gated transfer length method and capacitance–voltage measurements. A record high mobility of 2000 and 6000 cm2/(V s) was achieved, at room temperature and 85 K, respectively, near pinch-off at a carrier density of 2.4 × 1012 cm−2. This study shows the potential of growth on on-axis substrates by PAMBE to improve efficiency in N-polar HEMTs.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"194 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145189002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Independent dual-band metamaterial absorber with large frequency ratio based on Helmholtz resonators 基于亥姆霍兹谐振腔的大频率比独立双频超材料吸波器

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-09-29 DOI: 10.1063/5.0284536

Yong Liu, Donghao Zhao, Rui Yang

引用次数: 0

Boosting spectral response at band edge and charge transport in CZTSSe solar cells by periodic Mo back-contact texturing 利用周期性Mo背接触纹理增强CZTSSe太阳能电池带边光谱响应和电荷输运

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-09-29 DOI: 10.1063/5.0292930

Yuhao Zhang, Letu Siqin, Ruijian Liu, Yunjie Bai, Jingqi Qiao, Chenjun Yang, Hongmei Luan, Guonan Cui, Yanchun Yang, Bin Yao, Chengjun Zhu

{"title":"Boosting spectral response at band edge and charge transport in CZTSSe solar cells by periodic Mo back-contact texturing","authors":"Yuhao Zhang, Letu Siqin, Ruijian Liu, Yunjie Bai, Jingqi Qiao, Chenjun Yang, Hongmei Luan, Guonan Cui, Yanchun Yang, Bin Yao, Chengjun Zhu","doi":"10.1063/5.0292930","DOIUrl":"https://doi.org/10.1063/5.0292930","url":null,"abstract":"This study utilizes magnetron sputtering combined with a metal mask attached to the Mo surface to fabricate a periodic protruding array microstructure. By optimizing the mask specifications (200-mesh optimal) and sputtering time (100-s optimal), the Mo surface was textured. Experimental results demonstrate that this periodic microstructure effectively modulates the spatial distribution of reflected angles for incident sunlight (primarily near-infrared band edge light with deep penetration depth) reaching the Mo back contact in Cu2ZnSn(S,Se)4 (CZTSSe) solar cells. This significantly extends the effective optical path length, thereby enhancing photon absorption utilization. Concurrently, the periodic structure improves the crystallinity of the absorber layer, optimizes carrier transport properties, and effectively suppresses the concentration of interfacial and bulk defects. Benefiting from these synergistic improvements in both electrical and optical performance, the power conversion efficiency of the CZTSSe devices increased from 11.59% to 12.82%. The entirely physical optimization scheme employed here offers high controllability and excellent compatibility with other process enhancements, presenting a straightforward and effective strategy for improving absorber crystal growth and light management in photovoltaic devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"4 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145188996","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Plasma-induced formation of wavy graphite structures for enhanced lithium storage 等离子体诱导形成波纹石墨结构增强锂存储

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-09-29 DOI: 10.1063/5.0283459

Ziqi Luo, Jianmin Feng, Lei Dong, Yue Wu, Jiahan Ma, Xiaoyu Yu, Jingyi Zhang, Conglai Long, Xiaowei Wang, Dejun Li

{"title":"Plasma-induced formation of wavy graphite structures for enhanced lithium storage","authors":"Ziqi Luo, Jianmin Feng, Lei Dong, Yue Wu, Jiahan Ma, Xiaoyu Yu, Jingyi Zhang, Conglai Long, Xiaowei Wang, Dejun Li","doi":"10.1063/5.0283459","DOIUrl":"https://doi.org/10.1063/5.0283459","url":null,"abstract":"This study introduces a plasma-driven strategy to improve the energy-intensive and inefficient characteristics of conventional graphite anode manufacturing for lithium-ion batteries. By utilizing ultrahigh-temperature plasma generated at carbon-fiber electrode tips, needle coke is rapidly graphitized within seconds. The instantaneous heat triggers carbon atom rearrangement and impurity volatilization, yielding a wavy graphite structure with expanded interlayer spacing (ranging from 0.358 to 0.368 nm) and ordered sp2 carbon domains (31.5 nm grain size). This architecture enhances lithium-ion diffusion kinetics while increasing active sites. Electrochemical tests demonstrate exceptional performance: 359.7 mAh/g reversible capacity after 100 cycles and 149.57 mAh/g at 1.6 A/g (7.7% improvement over natural graphite). The wavy structure's lattice distortions act as stress buffers, mitigating volume expansion and improving cycle stability. This research presents an approach for the short-term, low-energy-consumption preparation of high-performance graphite anodes, potentially facilitating the low-cost industrial manufacturing of lithium-ion batteries.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"75 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145189505","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0