Applied Physics Letters最新文献_第8页

Hot-carrier photocatalysts with energy-selective contacts based on quantum wells and dots

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-03-24 DOI: 10.1063/5.0256536

Shuanglong Han, Zhiqiang Fan, Ousi Pan, Xiaohang Chen, Zhimin Yang, Yanchao Zhang, Jincan Chen, Shanhe Su

引用次数: 0

Ultra-broadband terahertz polarization converter based on flexible metamaterial

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-03-24 DOI: 10.1063/5.0259523

Mo Yang, Zihang Song, Fangrong Hu, Dawei Wei, Zifeng Yang

{"title":"Ultra-broadband terahertz polarization converter based on flexible metamaterial","authors":"Mo Yang, Zihang Song, Fangrong Hu, Dawei Wei, Zifeng Yang","doi":"10.1063/5.0259523","DOIUrl":"https://doi.org/10.1063/5.0259523","url":null,"abstract":"Polarization is one of the basic properties of electromagnetic (EM) waves, and polarization conversion is essential in many terahertz (THz) applications, including communications and sensitive measurements. Due to the limitations of the materials and process, existing THz polarization converters generally have the disadvantages of narrow operating frequency band and non-flexibility. We experimentally demonstrate a flexible ultra-broadband THz polarization converter operating in reflection. It can efficiently convert a linearly polarized THz wave to its orthogonal counterpart in a broadband regime. The device consists of three layers: the lower metal film, the middle dielectric layer, and the upper metal resonance structure array. The unit cell of the upper metal resonance structure is a four-open-ring formed by subtracting two metal bars from a metal ring. The position of the opening is in the diagonal direction of 45° from the upper right corner to the lower left corner of the unit structure. The device is simulated using a full wave EM simulation software and fabricated by a surface micromachining process. The test experiment is completed using a THz-TDS spectrometer and the results show that the polarization conversion ratio is more than 0.8 in an ultra-broadband regime from 1.45 to 2.67 THz. This ultra-broadband conversion is mainly caused by the magnetic resonance of THz waves. More importantly, the convertible frequency band can be tailored for practical applications across the EM spectrum.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"92 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143703570","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Realization of high power factor in polycrystalline In doped Sb2Te3 thin films for wearable application

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-03-24 DOI: 10.1063/5.0245248

Wenyu Yang, Yiming Zhong, Dongwei Ao, Dong Yang, Meng Wei, Fu Li, Yuexing Chen, Guangxing Liang, Jingting Luo, Zhuanghao Zheng

{"title":"Realization of high power factor in polycrystalline In doped Sb2Te3 thin films for wearable application","authors":"Wenyu Yang, Yiming Zhong, Dongwei Ao, Dong Yang, Meng Wei, Fu Li, Yuexing Chen, Guangxing Liang, Jingting Luo, Zhuanghao Zheng","doi":"10.1063/5.0245248","DOIUrl":"https://doi.org/10.1063/5.0245248","url":null,"abstract":"Te-based materials exhibit outstanding thermoelectric performance at room temperature, promising candidates for the fabrication of the wearable electronic devices and chip-sensor of internet-of-things. In this work, a combination of magnetron co-sputtering and post-tellurization methods was used to prepare In doped Sb2Te3 thin films. A high carrier concentration is ascribed to the increase in the density of states after In doping proved by first-principles calculations and experiments, which leads to an increase in the electrical conductivity of ∼1686.84 S cm−1 and moderate S above ∼105.24 μV K−1. Consequently, a peak power factor of 18.68 μW cm−1 K−2 was realized in In doped Sb2Te3 thin films at 300 K, representing a ∼17% increase compared to the undoped samples. After 1000 bending cycles, the relative resistance evolution lower than 2% and relative S evolution lower than 5% exhibit excellent flexibility of In-doped flexible thermoelectric film. The fabricated thermoelectric device generated an output power of 65 nW with a temperature difference of 20 K.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"99 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143703562","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Secondary electron emission characteristics of 3D-printed ceramic insulators with functionally graded lattice structures

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-03-24 DOI: 10.1063/5.0256365

Chao Wang, Yu-Long Yang, Xin-Ru Shi, Wen-Dong Li, Guang-Yu Sun, Si-Le Chen, Song-Lin Ran, Guan-Jun Zhang, Zhao-Quan Chen

{"title":"Secondary electron emission characteristics of 3D-printed ceramic insulators with functionally graded lattice structures","authors":"Chao Wang, Yu-Long Yang, Xin-Ru Shi, Wen-Dong Li, Guang-Yu Sun, Si-Le Chen, Song-Lin Ran, Guan-Jun Zhang, Zhao-Quan Chen","doi":"10.1063/5.0256365","DOIUrl":"https://doi.org/10.1063/5.0256365","url":null,"abstract":"The presence of a macroscopic interface between ceramic insulators and vacuum inevitably leads to multipactor under high electric fields, which is a significant threat to various electronic and electrical devices, as it is typically regarded as a precursor to electrical breakdown. In this study, we report a strategy using functionally graded lattice structures (FGLS) to manipulate the multipactor of the ceramic surface. First, particle-in-cell simulations were conducted to study the secondary electron avalanche process. Simulation results indicated that the interaction between electrons and FGLS hinders the development of secondary electron avalanche. Also, a few positive charges can be accumulated on the ceramic surface since FGLS eliminates the macroscopic interface between insulators and vacuum. Subsequently, stereolithography 3D printing technology was adopted to fabricate ceramic insulators with FGLS, and a further experimental characterization verifies the reduction of secondary electron yield, especially for surfaces with finer structures.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"18 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143703564","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Strain-driven anomalous thickness dependence of interfacial thermal conductance between dissimilar metals

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-03-24 DOI: 10.1063/5.0252298

Zhongyin Zhang, Ziyang Wang, Kunpeng Yuan, Jie Zhu, Jing Lv, Guanghua Cheng, Dawei Tang

{"title":"Strain-driven anomalous thickness dependence of interfacial thermal conductance between dissimilar metals","authors":"Zhongyin Zhang, Ziyang Wang, Kunpeng Yuan, Jie Zhu, Jing Lv, Guanghua Cheng, Dawei Tang","doi":"10.1063/5.0252298","DOIUrl":"https://doi.org/10.1063/5.0252298","url":null,"abstract":"Understanding thermal transport behaviors across dissimilar metal films is essential for optimizing electronic devices' performance and efficiency. However, the effect of interfacial parameters such as the thickness on interfacial thermal conductance (G) of metal/metal remains elusive. In this Letter, the G between Al and Cu with varying Cu thickness was investigated from 78 to 295 K using the time domain thermoreflectance technique combined with nonequilibrium molecular dynamics (NEMD) simulations and the diffuse mismatch model (DMM). The temperature dependence of GAl/Cu follows a pattern that is consistent with phonon-related thermal transport behaviors and decreases with increasing Cu thickness. The phonon related behaviors are attributed to the existence of the oxide layer at the interface. By taking the oxide layer into account, NEMD and DMM calculations match well with the experimental results, proving that the oxide layer hinders electron transport across the interface. We further find that strain distributions in Cu layers have a negative correlation with Cu thickness. When applying compressive strain on Cu, the overlap of phonon density of states between Cu and Al increases, especially for phonons of 6.5–9 THz, which is responsible for the Cu thickness-dependence in GAl/Cu. Our results not only help revealing strain effect on G but also pave the way for the thermal design of metal interconnect in integrated circuits.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"99 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143703594","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

On-chip compact radio frequency metal self-rolled-up nanomembrane resonator

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-03-24 DOI: 10.1063/5.0253261

Xianchao Wei, Shuyao Yan, Zhengji Xia, Zhikun Zhou, Lei Sang, Wen Huang

引用次数: 0

Orbital torque in Mn/FM bilayer systems

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-03-24 DOI: 10.1063/5.0256343

Yang Zhou, Fei Wei, Wenjun Zhang, Zhixiang Ren, Gengtao Chen, Hui Li, G. Han, S. Kang

引用次数: 0

Enhancement of thermoelectric power factor in CaGe2 films through interlayer atomic modulation

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-03-24 DOI: 10.1063/5.0250240

Zhao Hu, Kenneth Magallon Senados, Takeaki Sakurai, Takashi Aizawa, Takao Mori

引用次数: 0

Electric control of oxygen vacancies in homo-ferroelectric-domain BiFeO3

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-03-24 DOI: 10.1063/5.0253399

Xi Shen, Qinwen Guo, Xianghan Xu, Xiangfei Li, Ying Meng, Luyao Wang, Haoyu Zhuang, Richeng Yu, Sang-Wook Cheong

{"title":"Electric control of oxygen vacancies in homo-ferroelectric-domain BiFeO3","authors":"Xi Shen, Qinwen Guo, Xianghan Xu, Xiangfei Li, Ying Meng, Luyao Wang, Haoyu Zhuang, Richeng Yu, Sang-Wook Cheong","doi":"10.1063/5.0253399","DOIUrl":"https://doi.org/10.1063/5.0253399","url":null,"abstract":"Although the performance of BiFeO3 (BFO) films has been extensively and deeply studied, further exploration is still needed to understand the correlation between a ferroelectric single domain and high performance in BFO single crystals. Therefore, we conduct the biased in situ transmission electron microscopy experiments on the electrical transport properties of BFO single crystals with single domains. The in situ measured I–V curves indicate neither one-way conduction nor resistance switching. The conductive behavior of BFO corresponds to space charge-limited conduction, indicating a high concentration of oxygen vacancies and the presence of Ohmic contact between the Pt electrode and BFO. After applying a DC constant voltage, the resistance decreases by approximately 50% and partially recovers after exposure to air. The electron energy loss spectroscopy spectra under different conditions indicate that BFO interacts with the external environment. Specifically, DC voltage causes BFO to release oxygen atoms, resulting in an increase in oxygen vacancy concentration and decrease in resistance. Air oxidation leads to a decrease in oxygen vacancy concentration and partial recovery of resistance. In addition, in situ heating experiments (at 20–400 °C) indicate that oxygen vacancies mainly originate from the external electric field rather than thermal effects.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"61 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143703566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Thermal-mechanical perspectives on hydrophilic- and surface-activated-bonding Si/SiC interfaces for SOI's thermal management enhancement

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-03-24 DOI: 10.1063/5.0253834

Yang He, Shun Wan, Shi Zhou, Zeming Huang, Yongwei Chang, Yu Yang, Xiaowu Gao, Yongze Xu, Jinfeng Yang, Shang Gao, Dengke Ma, Yan Zhou, Huarui Sun

{"title":"Thermal-mechanical perspectives on hydrophilic- and surface-activated-bonding Si/SiC interfaces for SOI's thermal management enhancement","authors":"Yang He, Shun Wan, Shi Zhou, Zeming Huang, Yongwei Chang, Yu Yang, Xiaowu Gao, Yongze Xu, Jinfeng Yang, Shang Gao, Dengke Ma, Yan Zhou, Huarui Sun","doi":"10.1063/5.0253834","DOIUrl":"https://doi.org/10.1063/5.0253834","url":null,"abstract":"Integrating high thermal conductivity cost-effective SiC to the Si-active-layer film is an effective solution to enhance the thermal performance of silicon-on-insulator (SOI) and maintain its distinct electrical performance. Although direct bonding of Si films to SiC substrates demonstrates many advantages over epitaxial growth, different bonding techniques may yield disparate bonding qualities and heat dissipation abilities. Here, a comparative analysis from thermal-mechanical-structural perspectives of different Si/SiC interfaces, prepared by hydrophilic bonding (HB) and surface-activated bonding (SAB) methods, is systematically conducted. It was found that the amorphous interlayer thickness and thermal boundary resistance (TBR) of the SAB-Si/SiC heterojunction can be significantly modulated by annealing, accompanied by a beneficial decreased TBR at high working temperatures. Moreover, the residual stress within the Si film by SAB is greatly reduced to an order of magnitude lower than that by HB. In general, the SAB-Si/SiC interface exhibits a tunable microstructure, comparably low TBR, and nearly fully relaxed stress, potentially outperforming the HB-Si/SiC interface when considering the comprehensive performance. This work puts forward an important thermal-mechanical perspective to evaluate interface bonding quality for practical applications, and removes a headache barrier toward wafer-scale high-yield integration of Si active layers onto SiC substrates to greatly enhance SOI devices' thermal management.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"2 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143703596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0