通过降低氧空位浓度，提高了hf0.5 zr0.5 o2基薄膜的电阻开关比

IF 3.6 2区物理与天体物理 Q2 PHYSICS, APPLIED

Applied Physics Letters Pub Date : 2025-09-29 DOI:10.1063/5.0285927

Hong Wei Wang, Jin Peng Cao, Wei Ye Deng, Jun Kun Wu, Li Hong Yang, Zhang Jian Zhou, Chun Feng, Yang Bai, Qi Liang Li, Jun Miao

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引用次数: 0

摘要

基于hfo2的电阻随机存取存储器（RRAM）的电阻开关机制通常涉及由氧空位形成的导电丝。这种机制的固有特性导致基于hfo2的RRAM器件的可靠性低，且断开状态电流升高。通过受体(La3+) -给体（Ta5+）共掺杂策略，降低了Hf0.5Zr0.5O2薄膜中的氧空位浓度，使0.5 V下的关断电流从7.6 × 10−3 A/cm2降低到3.6 × 10−6 A/cm2，使电阻开关比从6.2 × 102提高到2.4 × 104，提高了开关稳定性。在Hf0.5Zr0.5O2薄膜中掺杂La3+和Ta5+后，电阻开关机制由氧空位导电丝转变为电子捕获/脱捕获机制。高阻态的传导机制由肖特基发射过渡到空间电荷限制电流，低阻态的传导机制由欧姆传导过渡到Fowler-Nordheim隧穿。x射线光电子能谱表明，共掺杂方法降低了氧空位的浓度，从而影响了电阻开关性能和机制的改变。本研究为hfo2基RRAM的设计和改进提供了一种有效的方法，同时也促进了对hfo2基薄膜中掺杂影响电阻开关机制的理解。

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Enhanced resistance switching ratio of Hf0.5Zr0.5O2-based film through reducing oxygen vacancy concentration

The resistance switching mechanism in HfO2-based resistive random access memory (RRAM) typically involves conductive filaments formed by oxygen vacancies. The inherent characteristics of this mechanism lead to low reliability and elevated off-state current in HfO2-based RRAM devices. Herein, the oxygen vacancy concentration in Hf0.5Zr0.5O2 film was decreased through the acceptor (La3+)–donor (Ta5+) co-doping strategy, which reduced off-state current from 7.6 × 10−3 A/cm2 to 3.6 × 10−6 A/cm2 at 0.5 V, increased the resistance switching ratio from 6.2 × 102 to 2.4 × 104, and improved switching stability. Following the doping of Hf0.5Zr0.5O2 film with La3+ and Ta5+, the resistance switching mechanism changes from oxygen vacancy conductive filaments to the electron capture/de-capture mechanism. The conduction mechanism of the high resistance state transitions from Schottky emission to space charge limited current, while that of the low resistance state transitions from Ohmic conduction to Fowler–Nordheim tunneling. X-ray photoelectron spectroscopy has shown that the co-doping approach decreases the concentration of oxygen vacancies, which in turn influences the alterations in the resistance switching performances and mechanisms. This study presents an effective approach for the design and improvement of HfO2-based RRAM, while also advancing the comprehension of the resistance switching mechanism influenced by doping in HfO2-based films.

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来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.