Applied Physics Letters最新文献

Distinct nucleation and growth kinetics of BaTiO3 on Ge (001) by RF magnetron sputtering 射频磁控溅射制备BaTiO3在Ge（001）表面的成核和生长动力学

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-11 DOI: 10.1063/5.0275009

Ruyuan Ma, Wentao Yan, Mingliang Zhao, Xiaofei Liu, Yuanmao Pu, Yang Qiu, Xingyan Zhao, Shaonan Zheng, Qize Zhong, Yuan Dong, Ting Hu

引用次数: 0

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-11 DOI: 10.1063/5.0259343

Wanjiong Li, Jibin Li, Nai Jiang, Xinhao Guo, Mingyi Chen, Yunzhen Hu, Quanlin Ye, Xinman Chen, Shuxiang Wu, Chao Shen, Shuwei Li

{"title":"Spin-correlated optical transitions in room-temperature ferromagnetic Fe3GaTe2","authors":"Wanjiong Li, Jibin Li, Nai Jiang, Xinhao Guo, Mingyi Chen, Yunzhen Hu, Quanlin Ye, Xinman Chen, Shuxiang Wu, Chao Shen, Shuwei Li","doi":"10.1063/5.0259343","DOIUrl":"https://doi.org/10.1063/5.0259343","url":null,"abstract":"Fe3GaTe2 has been recently identified as a potential van der Waals (vdW) ferromagnetic material for spintronic devices, owing to long-range ferromagnetic order, strong perpendicular magnetic anisotropy, and high Curie temperature (TC) above room temperature. The band structure and electronic transitions are crucial for understanding magnetic properties of Fe3GaTe2, requiring a comprehensive investigation of the electronic behavior of Fe3GaTe2 under external magnetic fields. In this study, magnetic circular dichroism (MCD) spectroscopy was employed to examine the electronic transitions in Fe3GaTe2 at room temperature. Three distinct MCD peaks are clearly observed under the applied magnetic fields, which could correspond to three electronic transitions determined by first-principles density functional theory calculations of the band structure of Fe3GaTe2. Furthermore, the three transition bands would be correlated with the Fe d orbitals, as supported by the calculated orbital-resolved band structure of Fe3GaTe2. These findings offer insights into the electronic transitions and the underlying electronic structure in Fe3GaTe2, providing a basis for further fundamental research and potential applications in spintronic devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"706 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144603867","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optical refrigeration of Tm3+ doped indium fluoride glass from room temperature 掺杂Tm3+氟化铟玻璃的室温光学制冷

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-11 DOI: 10.1063/5.0244229

S. Nobel, X. Zhu, J. Wu, N. Peyghambarian, R. A. Norwood

引用次数: 0

High-frequency spin transport in thin aluminum calculated by spin drift-diffusion equation 用自旋漂移-扩散方程计算薄铝中的高频自旋输运

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-11 DOI: 10.1063/5.0251897

Runzi Hao, R. H. Victora

{"title":"High-frequency spin transport in thin aluminum calculated by spin drift-diffusion equation","authors":"Runzi Hao, R. H. Victora","doi":"10.1063/5.0251897","DOIUrl":"https://doi.org/10.1063/5.0251897","url":null,"abstract":"Lateral spin valves (LSV) are an essential element in spintronics research and applications. The separation of spin injection and spin detection in the LSV makes it a useful platform for studying fundamental physics (e.g., spin relaxation) and building nanoscale devices (spin transistors, magnetic sensors, etc.). To drive many LSV-based prototypes closer to production, there is a need to evaluate the LSV performance under high-frequency (e.g., gigahertz) operations, especially with information spectra rather than single tones. Here we calculate gigahertz spin transport in a nonmagnetic channel of the LSV using a pseudo-random binary sequence as an input signal to mimic information. We solved the time-dependent spin drift-diffusion equation and provide an integral solution for the transmitted spin polarization. A frequency-dependent spin transport length is found that shows high-frequency spin signals transmit much less efficiently than low-frequency spin signals. An applied electric field consistent with the high resistance of thin films is shown to improve transmission. The transmitted signal strength and its signal-to-noise ratio (SNR) are analyzed with respect to the transmission distance, the diffusion coefficient, and an applied electric field along the channel; these effects can be explained in the frequency domain. Finally, we calculated gigahertz spin transport in a thin aluminum channel and obtained an SNR &gt;20 dB, which is a value that exceeds the SNR of the input signal. This demonstrates the great potential of LSV-based miniaturized spintronic devices to transmit information in high-frequency regimes.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"47 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144603863","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Magnetic phase diagram of Cr2Te3 revisited by ac magnetostrictive coefficient 用交流磁致伸缩系数重新研究Cr2Te3的磁相图

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-11 DOI: 10.1063/5.0271368

Long Zhang, Zhongzhu Jiang, Yugang Zhang, Jing Zhang, Aifeng Wang, Mingquan He, Y. P. Sun, Xuan Luo, Yisheng Chai

{"title":"Magnetic phase diagram of Cr2Te3 revisited by ac magnetostrictive coefficient","authors":"Long Zhang, Zhongzhu Jiang, Yugang Zhang, Jing Zhang, Aifeng Wang, Mingquan He, Y. P. Sun, Xuan Luo, Yisheng Chai","doi":"10.1063/5.0271368","DOIUrl":"https://doi.org/10.1063/5.0271368","url":null,"abstract":"Two-dimensional (2D) magnetic materials have attracted considerable interest owing to their potential applications in spintronics and fundamental investigations into low-dimensional magnetism. Cr2Te3, a quasi-2D non-van der Waals magnet, exhibits a complex magnetic phase diagram due to competing magnetic interactions within and between layers. However, the precise nature and evolution of these magnetic phases remain unclear. Here, we utilize an ultrahigh-sensitive composite magnetoelectric technique, which probes the ac magnetostrictive coefficient, to systematically explore the temperature–magnetic field phase diagram of Cr2Te3 single crystals. Our results reveal the coexistence of multiple magnetic phases, including canted ferromagnetic, antiferromagnetic, and paramagnetic states. An additional canted ferromagnetic phase and a possible triple point are also proposed. The updated phase diagram provides deeper insights into the specific spin configurations associated with each phase. These findings further highlight the decoupled magnetic ordering between the Cr1/Cr3 layers and the Cr2 layer near the magnetic ordering temperatures.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"6 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144603865","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Efficient spin–orbit torque driven magnetization switching of GdFe using phosphorus-implanted platinum layers 利用磷化铂层实现GdFe自旋轨道转矩驱动的高效磁化开关

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-10 DOI: 10.1063/5.0271181

Kazuki Shintaku, Arun Jacob Mathew, Akihisa Iwamoto, Mojtaba Mohammadi, Hiroyuki Awano, Hironori Asada, Yasuhiro Fukuma

{"title":"Efficient spin–orbit torque driven magnetization switching of GdFe using phosphorus-implanted platinum layers","authors":"Kazuki Shintaku, Arun Jacob Mathew, Akihisa Iwamoto, Mojtaba Mohammadi, Hiroyuki Awano, Hironori Asada, Yasuhiro Fukuma","doi":"10.1063/5.0271181","DOIUrl":"https://doi.org/10.1063/5.0271181","url":null,"abstract":"The capability of the spin–orbit torque (SOT) generated via phenomena such as the spin Hall effect in heavy metals, in switching the magnetization of an adjacent magnetic material, has been studied extensively over the last decade. The efficiency of SOT generation is commonly quantified in terms of the spin Hall angle (SHA). In this work, we demonstrate experimentally that implanting platinum (Pt) with phosphorus (P), resulting in Pt (P) with different implantation doses, increases SHA by a factor of 7, from 0.06 (dose of zero) to 0.43 (dose of 10 × 1016 ions/cm2). The enhanced SHA, along with factors such as perpendicular magnetic anisotropy and resistivity, leads to reduction of the critical current density for switching the perpendicular magnetization of ferrimagnetic rare earth-transition metal alloy Gd26Fe74, by a factor of nearly 27, from 4.0 × 1011 A/m2 (zero) to 1.5 × 1010 A/m2 (10 × 1016 ions/cm2). Furthermore, the switching current density at zero thermal fluctuations and thermal stability factor were evaluated and found to be 2.0 × 1010 A/m2 and 61.4 (10 × 1016 ions/cm2), with the latter being sufficiently above the required threshold for commercial memory applications. Our results suggest that Pt (P) could be a strong candidate in realizing efficient SOT driven magnetization switching, leading to the development of improved memory and logic devices in the future.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"3 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144594174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhancement of long-term memory of IGZO synaptic transistors by the introduction of an Al2O3 charge trapping layer 引入Al2O3电荷俘获层增强IGZO突触晶体管的长期记忆

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-10 DOI: 10.1063/5.0282482

Yuhui Wang, Guangtan Miao, Zezhong Yin, Ranran Ci, Guoxia Liu, Fukai Shan

{"title":"Enhancement of long-term memory of IGZO synaptic transistors by the introduction of an Al2O3 charge trapping layer","authors":"Yuhui Wang, Guangtan Miao, Zezhong Yin, Ranran Ci, Guoxia Liu, Fukai Shan","doi":"10.1063/5.0282482","DOIUrl":"https://doi.org/10.1063/5.0282482","url":null,"abstract":"Brain-inspired neuromorphic computing has been widely considered a promising solution to overcome the limitations of traditional von Neumann architecture in the current computer system. As an essential component of the neuromorphic system, the artificial synaptic device exhibits great potential in adaptive learning. Due to their controllable channel conductance and CMOS compatibility, solid electrolyte-gated synaptic transistors (EGSTs) have garnered significant interest as next-generation neuromorphic devices. However, most of the existing EGSTs suffer from rapid self-diffusion of the ions, making it difficult to maintain the stable channel conductance states. In this work, the synaptic transistors were fabricated with indium–gallium–zinc oxide as the channel layer, Al2O3 as the charge trapping layer, and ZrO2 as the solid electrolyte layer. The self-diffusion of the hydrogen ions can be suppressed by the positive charges trapped in the Al2O3 layer, which significantly improves the long-term plasticity (LTP) of the devices. By adjusting the presynaptic spike scheme, the typical synaptic behaviors, including excitatory postsynaptic current, paired-pulse facilitation, and the transition from short-term memory to long-term memory, were simulated. Based on the conductance modulation properties of the channel in the synaptic transistor, an artificial neural network was constructed for pattern recognition, and a high accuracy of 95.4% was obtained. This work demonstrates an effective strategy for the enhancement of the LTP of the synaptic transistor.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"7 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144594176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Unraveling effects of competing interactions and frustration in vdW ferromagnetic Fe3GeTe2 nanoflake devices vdW铁磁Fe3GeTe2纳米片器件中竞争相互作用和挫折的解耦效应

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-10 DOI: 10.1063/5.0262983

Rajeswari Roy Chowdhury, Daichi Kurebayashi, Jana Lustikova, Oleg A. Tretiakov, Shunsuke Fukami, Ravi Prakash Singh, Samik DuttaGupta

{"title":"Unraveling effects of competing interactions and frustration in vdW ferromagnetic Fe3GeTe2 nanoflake devices","authors":"Rajeswari Roy Chowdhury, Daichi Kurebayashi, Jana Lustikova, Oleg A. Tretiakov, Shunsuke Fukami, Ravi Prakash Singh, Samik DuttaGupta","doi":"10.1063/5.0262983","DOIUrl":"https://doi.org/10.1063/5.0262983","url":null,"abstract":"Two-dimensional (2D) van der Waals (vdW) magnets and devices have garnered significant attention owing to the stabilization of long-range magnetic order down to atomic limit, and the prospect for quantum devices with unique functionalities. To achieve this objective, clarification of magnetotransport properties and understanding of the relevant interactions with lowering of dimensions are of extreme importance. Here, the magnetotransport properties of few atomic layer Fe3GeTe2 and (Co0.25Fe0.75)3GeTe2 nanoflake devices have been investigated. Magnetotransport investigations with applied magnetic field along the easy-axis show anomalous Hall effect, while that for applied magnetic field along the hard-axis reveal an unusual behavior. Atomistic calculations considering the presence of antiferromagnetic, ferromagnetic, and local symmetry-breaking interactions reveal the critical role of magnetic frustration effect assisted by thermal fluctuations, leading to a non-zero scalar spin chirality manifesting in an unconventional Hall effect. The present result clarifies the underlying interactions in few-layer 2D vdW ferromagnetic material system, important for the understanding of non-collinear spin configurations in vdW magnets for 2D spintronic devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"21 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144594177","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Large exchange bias field in Pt/Co bilayers with ultrathin native oxide 具有超薄原生氧化物的Pt/Co双分子层中的大交换偏置场

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-10 DOI: 10.1063/5.0275288

Agnieszka Klimeczek, Maurizio De Santis, Aurélien Masseboeuf, Jan Vogel, Laurent Ranno, Anne Lamirand, Stefania Pizzini

引用次数: 0

Enhancement of resistive switching properties in RRAM with AlN-Al2O3 bilayer structure AlN-Al2O3双层结构增强RRAM阻性开关性能

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-10 DOI: 10.1063/5.0262592

Jinshan He, Xiaoling Duan, Dong Wang, Jiangcheng Wu, Zhihong Liu, Tao Zhang, Yue Hao, Jincheng Zhang

引用次数: 0