Applied Physics Letters最新文献

Femtosecond laser-plasmon interference lithography for self-organization of extremely regular nanogratings with tunable periodicity

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-02 DOI: 10.1063/5.0240858

Ji Yan, Jiao Geng, Xiangwei Liu, Jukun Liu, Liping Shi

{"title":"Femtosecond laser-plasmon interference lithography for self-organization of extremely regular nanogratings with tunable periodicity","authors":"Ji Yan, Jiao Geng, Xiangwei Liu, Jukun Liu, Liping Shi","doi":"10.1063/5.0240858","DOIUrl":"https://doi.org/10.1063/5.0240858","url":null,"abstract":"Achieving laser-induced periodic surface structures with both excellent regularity and high tunability is a challenging task. In this study, we address this challenge by utilizing a hybrid film structure, comprising an amorphous silicon coating on a copper film, to create periodic structures through a photochemical reaction induced by laser-plasmon interference. Our experiments, corroborated by numerical simulations, demonstrate a significant decrease in structural periodicity from 1020 to 750 nm with an increase in silicon film thickness from 15 to 70 nm. This corresponds to a tuning sensitivity of 4.6 ± 0.28, which is an order of magnitude higher than that of previously reported single-layer films. This substantial tunability is due to the high refractive index of silicon, where even slight thickness variations significantly alter the effective refractive index near the metal surface, thereby modulating the plasmonic wavelength. Additionally, we investigated the influence of laser pulse durations and repetition rates on laser-induced periodic surface structure periodicity and found them to have negligible effects.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"32 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143757987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Giant correlation, many body and exciton effects in Janus ferrovalley material H-FeClBr 杰纳斯铁谷材料 H-FeClBr 中的巨相关、多体和激子效应

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-02 DOI: 10.1063/5.0251405

Chaobo Luo, Zhihui Jiang, Wenchao Liu, Zongyu Huang, Wenjuan Liu, Xiang Qi, Jiayu Dai, Xiangyang Peng

{"title":"Giant correlation, many body and exciton effects in Janus ferrovalley material H-FeClBr","authors":"Chaobo Luo, Zhihui Jiang, Wenchao Liu, Zongyu Huang, Wenjuan Liu, Xiang Qi, Jiayu Dai, Xiangyang Peng","doi":"10.1063/5.0251405","DOIUrl":"https://doi.org/10.1063/5.0251405","url":null,"abstract":"The family of transition metal dichlorides are recently found to be ferrovalley materials, exhibiting desirable spontaneous valley polarization that is a key to practical applications. In this work, Janus monolayer H-FeClBr is investigated as a case study by performing first-principles calculations. We focus on the giant correlation and many-body and exciton effects that will essentially modulate the electronic, valleytronic, and optical properties. The H-FeClBr presents strong ferromagnetism and spin–orbit coupling, giving rise to large spontaneous valley polarization. Due to the enormous electron correlation of the localized d electrons of the Fe atoms, the energy gap calculated using Hubbard U and hybrid functional HSE06 is extraordinarily widened by about seven times with respect to the Perdew–Burke–Ernzerhof (PBE) counterpart. As a result, the orbitals in valley bands are exchanged, the sign of the valley Berry curvatures is switched, and the valley polarization is reversed. The GW calculations further enhance the gap significantly to about 4 eV, which is close to ten times that of the PBE gap and indicative of very strong many-body effects. The exciton spectrum obtained by solving the Bethe–Salpeter equations reveals colossal electron–hole interaction, giving rise to a giant exciton binding energies of ∼1.54 eV. Corresponding to the optical excitation in the two inequivalent valleys with unequal gaps, there are two split exciton peaks, as opposed to the A and B exciton peaks in MoS2 spectrum, which correspond to the optical transitions in the same valley.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"5 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143757989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Growth of CdTe films on patterned graphene/Ge (100) by molecular beam epitaxy

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-02 DOI: 10.1063/5.0257127

Yanhui Zhang, Haitao Jiang, Zaihong Yang, Liuyan Fan, Ziteng Zhang, Can Zhou, Xiaohao Zhou, Pingping Chen

引用次数: 0

1.96 kV p-Cr2O3/ β -Ga2O3 heterojunction diodes with an ideality factor of 1.07

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-02 DOI: 10.1063/5.0248187

Chunxu Su, Hong Zhou, Zheyuan Hu, Chenlu Wang, Yue Hao, Jincheng Zhang

引用次数: 0

RF-sputtered Al-doped ZnO-based transparent electrochemical capacitors developed as a structural energy storage to replace double-glazed window for a smart building

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-02 DOI: 10.1063/5.0255229

Febin Paul, Vishnu Kalarikkal Narayanan, Sreenath S. Gopidas, Prasutha Rani Markapudi, Chan H. See, Gin Jose, Sankara Narayanan Potty, Libu Manjakkal

{"title":"RF-sputtered Al-doped ZnO-based transparent electrochemical capacitors developed as a structural energy storage to replace double-glazed window for a smart building","authors":"Febin Paul, Vishnu Kalarikkal Narayanan, Sreenath S. Gopidas, Prasutha Rani Markapudi, Chan H. See, Gin Jose, Sankara Narayanan Potty, Libu Manjakkal","doi":"10.1063/5.0255229","DOIUrl":"https://doi.org/10.1063/5.0255229","url":null,"abstract":"Structural energy storage combines energy storage with structural strength, reducing weight, saving space, and improving efficiency. Among various types, transparent structural energy storage shows strong potential for seamless integration into windows, screens, surfaces, consumer electronics, and automotive applications. Developing new electrode designs with environmentally abundant materials is essential to achieving global decarbonization goals and the net-zero target. In this work, we developed a transparent electrochemical capacitor (TEC) as a structural energy storage using aluminum-doped ZnO (AZO) film prepared by radio frequency sputtering on an indium-doped tin oxide (ITO) glass. We observed that the excellent electrical properties of the AZO film including high carrier concentration 6.54 × 1020 cm−3, Hall mobility 25.8 cm2 V−1 s−1, and resistivity 3.7 × 10−4 Ω cm contributed to enhancing the electrochemical performance of the TEC. The prepared transparent AZO exhibits a high specific capacitance of 44.4 μF cm−2 at 1 mV s−1 for a three-electrode study in a liquid electrolyte. The TEC fabricated using gel electrolyte shows a specific capacitance of 5.93 μF cm−2 at 1 mV s−1. We observed that both the electrochemical double-layer capacitance and pseudo-capacitance contributed to the charge storage in TEC, which was measured using Dunn's method. The double-glazed window shape of the TEC exhibits its promising potential for implementation as structural energy storage in smart buildings. We demonstrated TEC performance under various temperatures (−10 to 30 °C), its transparency of about 85% in the visible light range, and its integration capabilities with solar cells. This TEC aims to develop a structural element for smart buildings or autonomous electric vehicles.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"74 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143757782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

An enhancement-mode C-H diamond FET with low work function gate material gadolinia 采用低功函数栅极材料钆的增强型 C-H 钻石场效应晶体管

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-02 DOI: 10.1063/5.0250891

Minghui Zhang, Fang Lin, Wei Wang, Mingchen Zhang, Qi Qi, Genqiang Chen, Feng Wen, Yanfeng Wang, Pengfei Zhang, Yuesong Liang, Shuwei Fan, Cui Yu, Tai Min, Hongxing Wang

{"title":"An enhancement-mode C-H diamond FET with low work function gate material gadolinia","authors":"Minghui Zhang, Fang Lin, Wei Wang, Mingchen Zhang, Qi Qi, Genqiang Chen, Feng Wen, Yanfeng Wang, Pengfei Zhang, Yuesong Liang, Shuwei Fan, Cui Yu, Tai Min, Hongxing Wang","doi":"10.1063/5.0250891","DOIUrl":"https://doi.org/10.1063/5.0250891","url":null,"abstract":"Enhancement-mode hydrogen-terminated diamond (C-H diamond) field effect transistors (FETs) are strongly desirable for safety protection, energy saving, etc., and low work function gate material is an effective and convenient way to deplete the two-dimensional hole gas and realize the enhancement-mode. In this article, we demonstrate a C-H diamond FET with low work function gadolinia (Gd2O3) gate materials. For the 4 μm gate length (LG) Gd2O3 C-H diamond FET, the device demonstrates an obvious enhancement-mode with a threshold voltage of −1.3 V. Besides, the maximum source/drain current density and the leakage current density are −80.0 mA/mm and 1.6 × 10−6 A/cm2 at a gate voltage of −7 V, respectively. Moreover, the device demonstrates a saturation carrier mobility of 437.3 cm2/V · s. Accordingly, this enhancement-mode C-H diamond Gd2O3 FET demonstrates high performance with relatively high source/drain current density and low leakage current density, which will provide a strategy for the development of enhancement-mode C-H diamond FETs significantly.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"59 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143757988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Coexistence of intrinsic magnetic topological state and spin-polarized nontrivial flatband in the honeycomb-kagome monolayers X2Rb3 (X=Cr, Mo, W)

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-03-31 DOI: 10.1063/5.0260370

Jiashuo Liang, Hongshuang Liu, Bo Wang, Zeying Zhang, Liying Wang

{"title":"Coexistence of intrinsic magnetic topological state and spin-polarized nontrivial flatband in the honeycomb-kagome monolayers X2Rb3 (X=Cr, Mo, W)","authors":"Jiashuo Liang, Hongshuang Liu, Bo Wang, Zeying Zhang, Liying Wang","doi":"10.1063/5.0260370","DOIUrl":"https://doi.org/10.1063/5.0260370","url":null,"abstract":"Magnetic materials featuring topology and flatband in their electronic structure bridge the topological quantum physics and strongly correlated many-body physics, but materials that manifest this feature are rare. Here, we predict a class of ideal intrinsic magnetic topological insulators naturally featuring a nontrivial flatband in the two-dimensional (2D) honeycomb-kagome lattices X2Rb3 (X=Cr, Mo, W). In the absence of spin–orbit coupling (SOC), these monolayers are spin-polarized half-semimetals with a twofold degenerate nodal point and a flatband appearing at the Fermi level simultaneously. With SOC included, a significant bandgap (168 meV for W2Rb3) opens up at the band touching point, and the flatband that spans the whole Brillouin zone becomes nontrivial with a nonzero Chern number (C = 1). The topological property calculations verify that X2Rb3 monolayers are intrinsic quantum anomalous Hall effect materials. Due to the similarity to 2D continuum Landau levels, the striking nontrivial flatband in X2Rb3 makes it an ideal platform to investigate the flatband physics, such as the realization of fractional quantum anomalous Hall states in real materials.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"15 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143744828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Charge localization in optoelectronic and photocatalytic applications: Computational perspective

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-03-31 DOI: 10.1063/5.0257250

Francesco Ambrosio, Julia Wiktor

引用次数: 0

Generation of high and bidirectional out-of-plane spin–orbit torque through vertical magnetization gradient

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-03-31 DOI: 10.1063/5.0251658

Tianli Jin, Yuliang Zhu, Shaomin Li, Bo Zhang, Funan Tan, Gerard Joseph Lim, Jiangwei Cao, Kaiming Cai, Wen Siang Lew

{"title":"Generation of high and bidirectional out-of-plane spin–orbit torque through vertical magnetization gradient","authors":"Tianli Jin, Yuliang Zhu, Shaomin Li, Bo Zhang, Funan Tan, Gerard Joseph Lim, Jiangwei Cao, Kaiming Cai, Wen Siang Lew","doi":"10.1063/5.0251658","DOIUrl":"https://doi.org/10.1063/5.0251658","url":null,"abstract":"High efficiency and out-of-plane spin–orbit torque (OOP-SOT) driven magnetization switching is essential for developing spin-based memory and logic devices. In this study, we report the generation of a large charge-to-spin conversion and bidirectional OOP-SOT by engineering a vertical magnetization gradient within a Co/Ho multilayer system. Exploiting the antiferromagnetic coupling between Co and Ho, the magnetization gradient up to 16.8 (emu/cm−3)/nm was achieved by gradually varying the Ho layer thickness from 0.4 to 0.9 nm. The presence of the OOP-SOT was confirmed through Hall resistance-field loop shift measurements, which has been attributed to the broken symmetry in spin current reflection and transmission in the Co/Ho multilayer with vertical magnetic property gradients. Additionally, the effective field of the OOP-SOT is strongly correlated with the direction of the magnetization gradient, measured to be around +0.7 and –2.5 Oe/mA for the positive and negative magnetization gradients, respectively. Furthermore, the largest SOT in the Co/Ho multilayer with a negative gradient was observed compared to the positive gradient and uniform Co/Ho multilayer structures. The enhanced SOT is attributed to the bulk Rashba field generated by the gradient structure, along with increased spin polarization. The results demonstrated here provide a promising approach for utilizing magnetization gradients for the development of efficient, current-driven spin-based storage and logic devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"103 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143744830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

π /2-periodic planar Hall effect in MnGe thin films

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-03-31 DOI: 10.1063/5.0254689

Zhaohang Li, Fanbao Meng, Kesen Zhao, Xiangyu Hua, Zongyao Huang, Feixiong Quan, Hua Ge, Ziji Xiang, Tao Wu, Wenjie Meng, Yubin Hou, Qingyou Lu, Xianhui Chen

引用次数: 0