Applied Physics Letters最新文献

Enhancing spin–orbit torque in tri-layer devices with an ultra-thin light metal spacer

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-04 DOI: 10.1063/5.0253761

Durgesh Kumar Ojha, Liang-Juan Chang, Yu-Hui Wu, Wen-Yueh Jang, Yuan-Chieh Tseng

{"title":"Enhancing spin–orbit torque in tri-layer devices with an ultra-thin light metal spacer","authors":"Durgesh Kumar Ojha, Liang-Juan Chang, Yu-Hui Wu, Wen-Yueh Jang, Yuan-Chieh Tseng","doi":"10.1063/5.0253761","DOIUrl":"https://doi.org/10.1063/5.0253761","url":null,"abstract":"The discovery of spin current generation through an additional ferromagnetic layer has unlocked new possibilities for spin–orbit torque (SOT) devices, particularly in tri-layer SOT configurations. This breakthrough facilitates field-free switching (FFS) with perpendicular magnetic anisotropy (PMA) under the influence of z-polarization. Despite this progress, a significant challenge persists in lowering the switching current density (JSW) in SOT devices, which remains roughly an order of magnitude higher than in spin-transfer torque devices. We incorporated an ultra-thin (1 nm) copper (Cu) spacer into a tri-layer SOT structure where the orange peel effect likely arose. This ultra-thin Cu layer, combined with the optimized Pt-based SO layer, resulted in approximately a 35% reduction in JSW compared to the scenario without Cu insertion. The damping-like torque efficiency was analyzed concerning the FFS performance at optimized Cu spacer thickness to support the finding of JSW reduction. Using magneto-optic Kerr effect measurements and micromagnetic simulations, we identified domain nucleation as the primary mechanism driving FFS, confirming the role of z-polarization in reducing JSW effectively. This study proposes a design that simultaneously addresses three key challenges of PMA, JSW, and FFS in current SOT systems.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"37 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143782674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Single-pixel imaging through random media with automated adaptive corrections

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-04 DOI: 10.1063/5.0257816

Yining Hao, Yin Xiao, Wen Chen

引用次数: 0

Low crosstalk modular flip-chip architecture for coupled superconducting qubits

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-04 DOI: 10.1063/5.0245667

Soeren Ihssen, Simon Geisert, Gabriel Jauma, Patrick Winkel, Martin Spiecker, Nicolas Zapata, Nicolas Gosling, Patrick Paluch, Manuel Pino, Thomas Reisinger, Wolfgang Wernsdorfer, Juan Jose Garcia-Ripoll, Ioan M. Pop

引用次数: 0

Performance of 3 cm3 ion trap vacuum package sealed for 10 years

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-04 DOI: 10.1063/5.0243517

D. A. Thrasher, P. D. D. Schwindt

引用次数: 0

Ultrafast quasiparticle relaxation dynamics in the topological materials LaSbTe and CeSbTe

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-04 DOI: 10.1063/5.0252845

Liye Cao, Cuiwei Zhang, Yi Yang, Lei Wang, Yanghao Meng, Bixia Gao, Feng Jin, Xinbo Wang, Youguo Shi, Rongyan Chen

{"title":"Ultrafast quasiparticle relaxation dynamics in the topological materials LaSbTe and CeSbTe","authors":"Liye Cao, Cuiwei Zhang, Yi Yang, Lei Wang, Yanghao Meng, Bixia Gao, Feng Jin, Xinbo Wang, Youguo Shi, Rongyan Chen","doi":"10.1063/5.0252845","DOIUrl":"https://doi.org/10.1063/5.0252845","url":null,"abstract":"We utilize ultrafast time-resolved pump-probe spectroscopy to investigate photoinduced quasiparticle dynamics in the topological materials LaSbTe and CeSbTe. Our results reveal that the relaxation dynamics in both materials are characterized by two distinct decay channels. In LaSbTe, the amplitude of the photoinduced reflectivity related to the first decay channel exhibits two pronounced peaks at 163 and 280 K, whereas in CeSbTe, a single peak emerges at 165 K. These observations are strongly indicative of charge-density-wave phase transition(s). Notably, the temperature dependence of the relaxation time for this decay process in CeSbTe deviates from that in LaSbTe, probably due to the influence of 4f electrons. For the second decay process, LaSbTe exhibits behaviors dominated by phonon-assisted electron–hole recombination, while CeSbTe demonstrates a slower relaxation at low temperatures, possibly due to the imbalance between electron- and hole-type carriers. Furthermore, two coherent phonon modes around 1 and 3 THz are identified in both LaSbTe and CeSbTe. Remarkably, the phonon amplitudes in CeSbTe exhibit an unusual decrease with decreasing temperature until a very low temperature, which can potentially be ascribed to spin–phonon interactions. These findings reveal nonequilibrium charge dynamics and collective excitation in LaSbTe and CeSbTe, offering insights into the underlying physics of topological materials.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"28 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143782678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Voltage-controlled half adder via magnonic inverse design

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-04 DOI: 10.1063/5.0256599

Ze Chen, Gerard Joseph Lim, Calvin Ching Ian Ang, Tianli Jin, Funan Tan, Bryan Wei Hao Cheng, Wen Siang Lew

引用次数: 0

Ionization effects in single-shot carrier-envelope phase detection with gas-gap devices

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-04 DOI: 10.1063/5.0246794

Johannes Blöchl, Maximilian F. Seeger, Hartmut Schröder, Minjie Zhan, Alexander Guggenmos, Thomas Nubbemeyer, Matthias F. Kling, Boris Bergues

引用次数: 0

Ag-doped capsule-like tungsten oxide with controllable band structure and oxygen vacancy for highly efficient triethylamine sensing

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-04 DOI: 10.1063/5.0266553

Hui Liang, Yan Liu, Jiuyu Li, Hu Ma, Ruihua Zhao, Jianping Du

{"title":"Ag-doped capsule-like tungsten oxide with controllable band structure and oxygen vacancy for highly efficient triethylamine sensing","authors":"Hui Liang, Yan Liu, Jiuyu Li, Hu Ma, Ruihua Zhao, Jianping Du","doi":"10.1063/5.0266553","DOIUrl":"https://doi.org/10.1063/5.0266553","url":null,"abstract":"The detection and portable monitoring of organic amine is necessary for hazardous substance warning, life, and health. Herein, capsule-like tungsten oxide nanoparticles (NPs) were prepared to detect triethylamine, and the gas-sensing property is further enhanced by adjusting oxygen vacancy and band structure by doping tungsten oxide with Ag NPs. As-prepared nanomaterial consists of well-dispersed nanoparticles with capsule-like shapes. More chemically adsorbed oxygen and oxygen vacancy are formed in Ag-doped tungsten oxide, and bandgap decreases compared with pristine tungsten oxide. The gas-sensing tests show that the optimal Ag-doped tungsten oxide (Ag/WO3) NPs-based sensor exhibits more than six times the response higher than that of pristine tungsten oxide toward 50 ppm triethylamine (TEA) at an optimal temperature of 220 °C, with a detection limit as low as 248 ppb. Notably, fast response and recovery time and anti-interference properties are remarkable, and the two-week stability is also satisfactory, which are superior to reported related materials. For real-time TEA detection, as-prepared Ag/WO3 is proved to be efficient sensing material for portable monitoring applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"73 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143782677","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High endurance and low coercive voltage ferroelectric tunnel junction by electrode engineering

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-04 DOI: 10.1063/5.0256127

Yefan Zhang, Xiaopeng Luo, Xiao Long, Peng Yang, Shihao Yu, Yang Liu, Zihao Hou, Wei Wu, Sen Liu, Zhiwei Li, Yi Sun, Qingjiang Li

引用次数: 0

Enhanced thermoelectric performance by Hf substitution in p-type half-Heusler TiNi0.8Co0.2Sn

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-04 DOI: 10.1063/5.0257112

Masashi Mikami, Hidetoshi Miyazaki, Yoichi Nishino

{"title":"Enhanced thermoelectric performance by Hf substitution in p-type half-Heusler TiNi0.8Co0.2Sn","authors":"Masashi Mikami, Hidetoshi Miyazaki, Yoichi Nishino","doi":"10.1063/5.0257112","DOIUrl":"https://doi.org/10.1063/5.0257112","url":null,"abstract":"The half-Heusler TiNiSn alloy is a promising candidate for thermoelectric power generation, capable of directly converting waste heat into electric power, due to its high thermoelectric performance over a wide temperature range from 500 to 1000 K. However, the thermoelectric performance of p-type TiNiSn is much lower than that of its n-type counterpart. Here, we demonstrate that Hf substitution in the p-type half-Heusler TiNi0.8Co0.2Sn alloy significantly enhances thermoelectric performance within the miscibility gap region of the binary TiNiSn-HfNiSn phase diagram. The Seebeck coefficient, which is below 80 μV/K for TiNi0.8Co0.2Sn, is substantially improved to 170 μV/K in Ti0.5Hf0.5Ni0.8Co0.2Sn at 650 K, owing to modifications in the electronic band structure induced by Hf substitution. Moreover, the lattice distortion and point defects introduced by Hf substitution effectively reduce thermal conductivity, from 5.0 W/mK for TiNi0.8Co0.2Sn to 3.3 W/mK for Ti0.5Hf0.5Ni0.8Co0.2Sn at 900 K. Consequently, the thermoelectric figure of merit (ZT) significantly increases from 0.03 for TiNi0.8Co0.2Sn to 0.26 for Ti0.5Hf0.5Ni0.8Co0.2Sn at 800 K. This enhancement of thermoelectric performance in p-type TiNiSn enables the construction of thermoelectric modules composed solely of half-Heusler TiNiSn based alloys, which are expected to exhibit high thermal stability useful for long-term thermoelectric power generation.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"89 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143775425","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0