Applied Physics Letters最新文献

Ferroelectricity of wurtzite Be1−xMgxO from first-principles calculation 纤锌矿Be1−xMgxO的铁电性第一性原理计算

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-10-08 DOI: 10.1063/5.0288600

Yen-Chun Huang, Cheng-Wei Lee, Tien-Anh Nguyen, Emmanouil Kioupakis, Sieun Chae

引用次数: 0

Enhancement of surface acoustic wave amplification by drifting electrons in graphene under microwave irradiation 微波辐照下石墨烯中电子漂移增强表面声波放大

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-10-08 DOI: 10.1063/5.0288464

Vl. A. Margulis, E. E. Muryumin

引用次数: 0

First-principles prediction of symmetry-enforced multifold fermionic and bosonic degeneracies in M3Sn (M = V, Nb) compounds M3Sn （M = V, Nb）化合物中对称强制多重费米子和玻色子简并的第一性原理预测

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-10-08 DOI: 10.1063/5.0288878

Jay Panchal, Saurav Patel, Prafulla K. Jha

{"title":"First-principles prediction of symmetry-enforced multifold fermionic and bosonic degeneracies in M3Sn (M = V, Nb) compounds","authors":"Jay Panchal, Saurav Patel, Prafulla K. Jha","doi":"10.1063/5.0288878","DOIUrl":"https://doi.org/10.1063/5.0288878","url":null,"abstract":"Topological quantum materials featuring multifold band crossings have opened unprecedented pathways in the exploration of exotic matter phases. These multifold crossings with three-, six-, and eightfold degeneracies hold exceptional significance, as they are ruled out in high-energy frameworks by Poincaré symmetry, making their realization in solids highly nontrivial. Notably, the coexistence of higher-fold fermionic (eightfold) and bosonic (sixfold) degeneracies in a single material is scarcely observed in literature. In this regard, we conducted a detailed investigation into the symmetry-protected topological characteristics of experimentally synthesized A15-type M3Sn (M = V, Nb) compounds using first-principles calculations. Our scrutiny unveils sixfold degeneracies in M3Sn compounds, which corresponds to the maximum allowed in bosonic systems along with threefold nodal points, while an eightfold and fourfold fermionic degeneracy are identified in V3Sn compound at the R-high-symmetry point protected by nonsymmorphic crystalline symmetry. The phonon and electronic surface states calculated from a tight-binding model further validate the multifold degeneracies and also represent complementary Dirac surface states at the Γ-point. The phononic Weyl nodal line along the Γ–R path exhibits nontrivial topology with ±π Berry phase. The synthesized compounds have been confirmed to theoretically exhibit both dynamic and thermal stabilities. Our findings offer a promising platform to explore exotic excitations within a single material, paving the way for deeper insights into complex quasiparticle behavior in these potential superconductors.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"1 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145241455","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Anomalous valley Hall effect in two-dimensional multiferroic V2N2O semiconductor 二维多铁V2N2O半导体中的反常谷霍尔效应

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-10-08 DOI: 10.1063/5.0274822

Caijia Sun, Yiyu Sun, Haoshen Ye, Yijie Zhu, Leiming Chen, Huichao Li, G. P. Zhang, Jianli Wang

引用次数: 0

Two-dimensional metals thickness scaling effect on electrical contact in metal–semiconductor junctions: Carrier transport and ultrafast dynamics study 金属半导体结中电接触的二维金属厚度尺度效应：载流子输运和超快动力学研究

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-10-07 DOI: 10.1063/5.0274847

Zifan Niu, Wenchao Shan, Xinxin Wang, Xiuyun Zhang, Anqi Shi, Ying Zhang, Xianghong Niu

{"title":"Two-dimensional metals thickness scaling effect on electrical contact in metal–semiconductor junctions: Carrier transport and ultrafast dynamics study","authors":"Zifan Niu, Wenchao Shan, Xinxin Wang, Xiuyun Zhang, Anqi Shi, Ying Zhang, Xianghong Niu","doi":"10.1063/5.0274847","DOIUrl":"https://doi.org/10.1063/5.0274847","url":null,"abstract":"Two-dimensional (2D) van der Waals metal–semiconductor junctions (MSJs) with low-resistance contacts have great potential for designing high-performance electronic and optoelectronic devices. However, due to the quantum confinement effect, 2D metals exhibit layer-dependent conductivity that inevitably influences the contact properties of 2D MSJs, the underlying mechanism behind this effect is unclear. Herein, taking multilayer graphene and MoS2 as examples, we systematically studied the effect of 2D metal layer number on the MSJs by non-equilibrium Green's function and non-adiabatic molecular dynamics methods. Compared with the trilayer-graphene/MoS2 (Gr/MoS2) MSJ (5.0 × 104 KΩ µm), the contact resistance of the monolayer-Gr/MoS2 MSJ (7.6 × 103 KΩ µm) is reduced by one order of magnitude. Under a 0.6 V bias voltage, the reduced contact resistance results in the current increasing from 0.1 to 60 nA. The superior transport performance of monolayer-Gr/MoS2 MSJ derives from the reduction in the Schottky barrier of the MSJ as the number of graphene layers decreases, whereas the tunneling barrier remains nearly constant. Meanwhile, monolayer-Gr/MoS2 MSJ exhibits high photogenerated carrier gain, which is attributed to the ultrafast transfer (388 fs) of photogenerated electrons and long carrier lifetime (71 ns), resulting in superior optoelectronic performance. Our study presents a layer-number engineering strategy for optimizing contact properties in 2D MSJs.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"149 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145234983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electric-field-induced fully compensated ferrimagnetism in experimentally synthesized monolayer MnSe 实验合成单层MnSe的电场诱导全补偿铁磁性

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-10-07 DOI: 10.1063/5.0281523

Liguo Zhang, San-Dong Guo, Gangqiang Zhu

{"title":"Electric-field-induced fully compensated ferrimagnetism in experimentally synthesized monolayer MnSe","authors":"Liguo Zhang, San-Dong Guo, Gangqiang Zhu","doi":"10.1063/5.0281523","DOIUrl":"https://doi.org/10.1063/5.0281523","url":null,"abstract":"Owing to their inherent characteristics of zero stray field and terahertz dynamics, two-dimensional (2D) zero-net-magnetization magnets demonstrate the potential for miniaturization, ultradensity, and ultrafast performance. Recently, fully compensated ferrimagnet of 2D zero-net-magnetization magnets has already attracted attention, as it can exhibit global spin-splitting, magneto-optical response, and the anomalous Hall effect [Liu et al., Phys. Rev. Lett. 134, 116703 (2025)]. Therefore, it is very important to provide experimentally feasible strategies and materials to achieve fully compensated ferrimagnets. Here, we use the experimentally synthesized A-type PT-antiferromagnet [the joint symmetry (PT) of space inversion symmetry (P) and time-reversal symmetry (T)] MnSe as the parent material to induce fully compensated ferrimagnetism through an out-of-plane electric field. This electric field can remove the P symmetry of the lattice, thereby breaking the PT symmetry and inducing spin-splitting. When considering spin–orbital coupling, MnSe with an out-of-plane magnetization can achieve the anomalous valley Hall effect. In addition, we also discuss inducing fully compensated ferromagnetism via Se vacancies and Janus engineering. Our works can promote the further development of 2D fully compensated ferrimagnets both theoretically and experimentally.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"123 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145234980","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fe contribution to the magnetic anisotropy of L10-ordered FePt thin films studied by angle-dependent x-ray magnetic circular dichroism 用角度相关的x射线磁圆二色性研究了铁对l10 -有序FePt薄膜磁各向异性的贡献

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-10-07 DOI: 10.1063/5.0283193

Goro Shibata, Keisuke Ikeda, Takeshi Seki, Shoya Sakamoto, Yosuke Nonaka, Zhendong Chi, Yuxuan Wan, Masahiro Suzuki, Tsuneharu Koide, Hiroki Wadati, Koki Takanashi, Atsushi Fujimori

{"title":"Fe contribution to the magnetic anisotropy of L10-ordered FePt thin films studied by angle-dependent x-ray magnetic circular dichroism","authors":"Goro Shibata, Keisuke Ikeda, Takeshi Seki, Shoya Sakamoto, Yosuke Nonaka, Zhendong Chi, Yuxuan Wan, Masahiro Suzuki, Tsuneharu Koide, Hiroki Wadati, Koki Takanashi, Atsushi Fujimori","doi":"10.1063/5.0283193","DOIUrl":"https://doi.org/10.1063/5.0283193","url":null,"abstract":"Among magnetic thin films with perpendicular magnetic anisotropy (PMA), L10-ordered FePt has attracted significant attention because of its exceptionally strong PMA. However, the microscopic origin of its strong PMA has not been elucidated experimentally. We have investigated the contribution of the Fe 3d electrons to its magnetic anisotropy energy by angle-dependent x-ray magnetic circular dichroism at the Fe L2,3 edge. By this technique, one can deduce the magnetic dipole moment mT, which represents the anisotropic spatial distribution of spin-polarized electrons, and the orbital moment anisotropy (OMA) of Fe 3d electrons. Detected finite mT indicates that the spin-polarized Fe 3d electrons are distributed preferentially in the out-of-plane direction of the films. This mT of Fe overwhelms the positive contribution of OMA to PMA and reduces the PMA of L10-ordered FePt thin films, consistent with a previous first-principles calculation. The present result implies that a large positive contribution of the non-magnetic element Pt rather than Fe governs the PMA of L10-ordered FePt thin films.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"33 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145241703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Chemical solution-immersion deposition of BiFeO3 films reduced to nanometer thickness with stabilized polarization 化学溶液-浸没法沉积BiFeO3薄膜，薄膜厚度降至纳米级，极化稳定

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-10-07 DOI: 10.1063/5.0293351

Gulnigar Ablat, Shangzhi Gu, Yu Xia, Yi Xia, Li Zhang, Lijie Zhang, Long-Jing Yin, Zhihai Cheng, Haitao Yang, Yuan Tian, Zhihui Qin

{"title":"Chemical solution-immersion deposition of BiFeO3 films reduced to nanometer thickness with stabilized polarization","authors":"Gulnigar Ablat, Shangzhi Gu, Yu Xia, Yi Xia, Li Zhang, Lijie Zhang, Long-Jing Yin, Zhihai Cheng, Haitao Yang, Yuan Tian, Zhihui Qin","doi":"10.1063/5.0293351","DOIUrl":"https://doi.org/10.1063/5.0293351","url":null,"abstract":"Bismuth ferrite (BiFeO3, BFO), a representative ferroelectric material exhibiting multiferroic characteristics at ambient temperature and demonstrating reversible polarization under external electric fields, has attracted significant attention in the development of prototype ferroelectric devices utilizing its films. Moreover, nanometer-thick, ultra-thin BFO films with stabilized polarization facilitate device miniaturization and low-power consumption. Herein, we report the fabrication of high-quality BFO films with enhanced crystallinity in a rhombohedral structure through the cost-effective chemical solution-immersion deposition method, which maintains compatibility with existing semiconductor technologies. Notably, piezoresponse force microscopy and Kelvin probe force microscopy characterizations demonstrate stabilized polarization with a low decay exponent of 0.014. The out-of-plane ferroelectric polarization can still be reversed at ambient temperature, even when the film thickness is reduced to approximately 3 unit cells. This research presents an effective approach for fabricating ultra-thin ferroelectric films, particularly suitable for future non-volatile memory devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"106 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145235526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effects of high-temperature annealing on electrical properties of Si-doped β -Ga2O3 thin films grown by low-pressure hot-wall MOCVD 高温退火对低压热壁MOCVD生长si掺杂β -Ga2O3薄膜电学性能的影响

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-10-07 DOI: 10.1063/5.0292471

Jun J. Morihara, Mao Bando, Junya Yoshinaga, Yoshinao Kumagai, Masataka Higashiwaki

{"title":"Effects of high-temperature annealing on electrical properties of Si-doped β -Ga2O3 thin films grown by low-pressure hot-wall MOCVD","authors":"Jun J. Morihara, Mao Bando, Junya Yoshinaga, Yoshinao Kumagai, Masataka Higashiwaki","doi":"10.1063/5.0292471","DOIUrl":"https://doi.org/10.1063/5.0292471","url":null,"abstract":"Electrical properties of Si-doped Ga2O3 (010) homoepitaxial thin films grown by low-pressure hot-wall metalorganic chemical vapor deposition (MOCVD) and the effects of high-temperature post-deposition annealing (PDA) on them were studied through device characteristics of Schottky barrier diodes (SBDs) fabricated on the epitaxial substrates. All the SBDs showed ideal n-type Schottky characteristics with excellent in-plane uniformity at room temperature. Temperature-dependent forward current density–voltage (J–V–T) characteristics showed nearly constant ideality factors of 1.02 ± 0.01 from room temperature to 200 °C. The reverse breakdown V of the SBDs with PDA was about 100 V larger than those of the ones without PDA. Furthermore, reverse J–V–T characteristics of the PDA SBDs were well reproduced by the thermionic field emission model for the whole temperature range up to 200 °C. These results indicate that the high-temperature PDA treatment is a useful and effective technique to further improve electrical properties of the MOCVD-grown Ga2O3 epitaxial films.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"8 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145241461","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Hydrogen-assisted removal of oxygen vacancies in β-Ga2O3 氢辅助去除β-Ga2O3中的氧空位

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-10-07 DOI: 10.1063/5.0277345

Gaofu Guo, Dong Wei, Tiwei Chen, Zhucheng Li, Dengrui Zhao, Heng Yu, Huanyu Zhang, Yu Hu, Li Zhang, Chunhong Zeng, Xiaodong Zhang, Zhongming Zeng, Baoshun Zhang, Xianqi Dai

{"title":"Hydrogen-assisted removal of oxygen vacancies in β-Ga2O3","authors":"Gaofu Guo, Dong Wei, Tiwei Chen, Zhucheng Li, Dengrui Zhao, Heng Yu, Huanyu Zhang, Yu Hu, Li Zhang, Chunhong Zeng, Xiaodong Zhang, Zhongming Zeng, Baoshun Zhang, Xianqi Dai","doi":"10.1063/5.0277345","DOIUrl":"https://doi.org/10.1063/5.0277345","url":null,"abstract":"Oxygen vacancies (VO) are intrinsic defects in β-Ga2O3 that significantly impact its device performance. These vacancies can donate electrons to the conduction band, leading to unintentional n-type conductivity in as-grown β-Ga2O3. In addition, VO associated localized states can act as electron traps, scatter free carriers, and consequently degrade carrier mobility and overall device performance. Therefore, removing VO is crucial for improving material properties, promoting the development of p-type β-Ga2O3 and optimizing device performance. Currently, traditional methods for VO treatment, such as oxygen plasma treatment and thermal annealing, are effective but have high energy consumption, which is detrimental to carbon neutrality goals. This study presents a method for enhancing the removal of VO via hydrogen doping. β-Ga2O3 thin films were grown under low-oxygen conditions using metal-organic chemical vapor deposition, followed by hydrogen pre-annealing. X-ray photoelectron spectroscopy and cathodoluminescence characterizations of films treated under different annealing conditions confirmed the effectiveness of hydrogen doping in promoting VO elimination. Furthermore, ultraviolet photodetectors were fabricated using these films, and the analysis of their dark-state decay times provided additional evidence for reduced VO concentrations. Theoretical calculations based on density functional theory using a revised PBE functional and the climbing image nudged elastic band method reveal that hydrogen incorporation induces charge redistribution, facilitating VO migration, thus enhancing defect control.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"5 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145234982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0