Applied Physics Letters最新文献

Hydrogen-mediated control of magnetic anisotropy and magnetic domain structure in Co/Pd multilayer

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-01-09 DOI: 10.1063/5.0242410

Yan-Ru Chu, Xi-Wei Lu, Chun-Tse Hsieh, Chun-Yen Huang, Po-Hsiang Hsu, Li-Jie Liaw, Chak-Ming Liu, Wen-Chin Lin

引用次数: 0

Theoretical analysis of thermal conductivities of water and heavy water based on thermal resistance network model

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-01-09 DOI: 10.1063/5.0239480

Sijing Sun, Qingxuan Wang, Saqlain Raza, Dengke Ma, Tsuneyoshi Nakayama, Jun Liu, Jun Zhou

引用次数: 0

A dual-biomimetic surface with leaf-skeleton-based hierarchical structures for efficient atmospheric water harvesting

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-01-08 DOI: 10.1063/5.0235697

Qiyu Chen, Fabian Javier Medina, Qing Hao

{"title":"A dual-biomimetic surface with leaf-skeleton-based hierarchical structures for efficient atmospheric water harvesting","authors":"Qiyu Chen, Fabian Javier Medina, Qing Hao","doi":"10.1063/5.0235697","DOIUrl":"https://doi.org/10.1063/5.0235697","url":null,"abstract":"Atmospheric water harvesting (AWH) has been extensively researched as a sustainable solution to current freshwater scarcity. Various bioinspired AWH surfaces have been developed to enhance water-harvesting performance, yet challenges remain in optimizing their structures. In this work, we report a dual-biomimetic AWH surface that combines beetle-inspired heterogeneous wettability with leaf-skeleton-based hierarchical microstructures on a rigid substrate. An authentic leaf skeleton innovatively serves as the mask during photolithography complemented by O2-plasma treatment, enabling precise design of superhydrophilic SiO2 structures with a hierarchy of vein orders forming reticulate meshes on a hydrophobic Si substrate. This design facilitates enhanced water collection through intricate reticulate meshes and directional droplet transport along the abundant multi-order veins. Such AWH surface shows a water-harvesting efficiency of 172 mg cm−2 h−1, increasing up to 62% and 58% over the pristine SiO2/Si wafer and Si wafer, respectively. Additionally, the role of structure orientation in the open-surface droplet transport is explored while the AWH surface is vertically placed during the water-harvesting process. This work highlights the potential of using meticulous natural designs, like leaf skeletons, to improve AWH surfaces, with broad applications in compact devices, such as on-chip evaporative cooling and planar microfluidics manipulation.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"14 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142937079","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ultrafast manipulation of Néel-type merons using electric field pulses

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-01-08 DOI: 10.1063/5.0235596

Jiyong Kang, Dongxing Yu, Yaojin Li, Chenglong Jia

引用次数: 0

Fragmented charged domain wall below the tetragonal-orthorhombic phase transition in BaTiO3

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-01-08 DOI: 10.1063/5.0247479

Petr S. Bednyakov, Iegor Rafalovskyi, Jiří Hlinka

引用次数: 0

Sliding ferroelectricity-induced triple barrier modulation in van der Waals boron arsenide tunnel junctions

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-01-07 DOI: 10.1063/5.0242551

Hongyuan Zhao, Jiangni Yun, Linwei Yao, Lin Zhang, Jinyuan Liu, Junfeng Yan, Lei Zheng, Peng Kang, Wu Zhao, Zhiyong Zhang

{"title":"Sliding ferroelectricity-induced triple barrier modulation in van der Waals boron arsenide tunnel junctions","authors":"Hongyuan Zhao, Jiangni Yun, Linwei Yao, Lin Zhang, Jinyuan Liu, Junfeng Yan, Lei Zheng, Peng Kang, Wu Zhao, Zhiyong Zhang","doi":"10.1063/5.0242551","DOIUrl":"https://doi.org/10.1063/5.0242551","url":null,"abstract":"To develop low-power, miniature, nonvolatile memory resistor integrated devices for in-memory computing technologies, the exploration of atomic-scale ferroelectric channel semiconductor devices is necessary. We theoretically designed tunnel junction devices based on two-dimensional ferroelectric semiconductors, with two-dimensional metal TaSe2 used as the top electrode and van der Waals bilayer boron arsenide (BAs) as the ferroelectric semiconductor channel, aiming to achieve high-performance, low-power, two-dimensional ferroelectric memory resistors. Our findings demonstrate that the bilayer BAs, upon contact with metal electrodes, can achieve two stable and switchable ferroelectric states. Interlayer relative sliding enables stable and alternating two-dimensional ferroelectric domains, altering the types of triple potential barriers at interfaces from Schottky contacts to Ohmic contacts. Thus, under the modulation of the “triple barrier” mechanism, control over channel carrier switching is achieved, resulting in a tunneling electroresistance of 104%. Additionally, non-equilibrium Green's function results indicate nonlinear changes in the I–V curve when switching between the two stable ferroelectric states, highlighting the multi-resistive state nature of channel resistance. Our research underscores the potential of sliding ferroelectric tunnel junctions in integrating nonvolatile storage and computing units, emphasizing their innovative applications in in-memory computing technologies.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"35 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142935223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ferroelectric polarizations engineered reversible skyrmion–bimeron switch in van der Waals heterostructure RuClBr/Ga2S3

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-01-07 DOI: 10.1063/5.0242362

Yong Lei, Wei Sun, Xianghong Niu, Wenqi Zhou, Xueke Yu, Yongjun Liu, Xiuyun Zhang

{"title":"Ferroelectric polarizations engineered reversible skyrmion–bimeron switch in van der Waals heterostructure RuClBr/Ga2S3","authors":"Yong Lei, Wei Sun, Xianghong Niu, Wenqi Zhou, Xueke Yu, Yongjun Liu, Xiuyun Zhang","doi":"10.1063/5.0242362","DOIUrl":"https://doi.org/10.1063/5.0242362","url":null,"abstract":"Controllable operation between different magnetic topological states, such as skyrmions and bimerons, which share the same topological charge but exhibit distinct properties, has garnered extensive attention due to their potential applications in future high-density memory technologies. However, their remarkable origin mechanisms (e.g., in-plane and out-of-plane easy magnetic axis) make effective control of their switching a huge challenge. Based on first-principles calculations, we explore the 2D RuClBr/Ga2S3 van der Waals heterostructure and find that the skyrmion and bimeron topological states could be switched instantaneously and efficiently by regulating the electric polarization of Ga2S3 with an external electric field. Additionally, atomic spin dynamic simulations reveal that the evolved skyrmion and bimeron magnetic configurations are highly resistant to external disturbances, enduring external magnetic fields of up to 20 T. This efficient transformation between magnetic states is driven by magnetic anisotropy accompanying changes in the polarization state. Our work predicts that the RuClBr/Ga2S3 system is an ideal platform for addressing this control problem.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"1 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142936521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ghost imaging through complex scattering media with random light disturbance

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-01-07 DOI: 10.1063/5.0252090

Yang Peng, Wen Chen

引用次数: 0

Effect of doping in small-size hybrid nanostructures for plasmonic catalysis

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-01-06 DOI: 10.1063/5.0228172

Igor V. Smetanin, Alexander V. Uskov, Nikolay V. Nikonorov

{"title":"Effect of doping in small-size hybrid nanostructures for plasmonic catalysis","authors":"Igor V. Smetanin, Alexander V. Uskov, Nikolay V. Nikonorov","doi":"10.1063/5.0228172","DOIUrl":"https://doi.org/10.1063/5.0228172","url":null,"abstract":"The effect of doping on the lowest quantum state of hot electron trapped in the semiconductor shell of small size hybrid nanoparticles is investigated. Assuming a spherical Ag-AgBr hybrid nanoparticle with a metal core and a semiconductor shell, we study the changes in the spatial profile of the contact electric potential in the Schottky barrier as a function of the doping density under the Sze approximation of a completely depleted layer. The energy of the lowest quantum state of an electron in the semiconductor shell is estimated along with the tunneling time into the metal core. It is found that when the characteristic size of the depletion layer of the Schottky barrier exceeds the size of the semiconductor shell, this energy varies throughout the Schottky barrier height by changing the shell thickness and the doping density, with the tunneling lifetime varying from subpicoseconds to submicroseconds. This possibility can be exploited to improve the efficiency of plasmonic photocatalysis with small-sized hybrid nanoparticles: By adjusting the energy of the discrete electron state to the given lowest unoccupied molecular orbit level of the chemical adsorbed on the surface of the hybrid nanoparticle, one should expect the resonance transfer of an electron, thus a dramatic increase in the rate of photocatalysis. The proposed method introduces Quantum-Size Resonance-Enhanced Photocatalysis in the hybrid structure.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"29 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142929097","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Nitrogen-induced filament confinement strategy for implementing reliable resistive switching performance in a-HfOx memristors

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-01-06 DOI: 10.1063/5.0240368

Yuanyuan Zhu, Yufei Zhang, Shuning Yang, Xiaoyu Ma, Hongbing Lu, Yuebo Liu, Daobin Luo, Youqing Wang, Jing Zhou, Hongjun Wang

{"title":"Nitrogen-induced filament confinement strategy for implementing reliable resistive switching performance in a-HfOx memristors","authors":"Yuanyuan Zhu, Yufei Zhang, Shuning Yang, Xiaoyu Ma, Hongbing Lu, Yuebo Liu, Daobin Luo, Youqing Wang, Jing Zhou, Hongjun Wang","doi":"10.1063/5.0240368","DOIUrl":"https://doi.org/10.1063/5.0240368","url":null,"abstract":"Hafnium oxide (HfOx) films are highly valued as functional layers in nonvolatile resistive switching (RS) memristors due to their scalability, compatibility with CMOS technology, and high dielectric constant. However, the low reliability of HfOx-based memristors is the key factor hindering their widespread practical applications. Herein, amorphous HfOx (a-HfOx) films are used as the switching layers to construct memristors, and the nitrogen treatment strategy is employed to enhance the switching characteristics. All the fabricated Al/a-HfOx/ITO memristors demonstrate bipolar digital RS behaviors, and specifically, the 500 °C-treated a-HfOx device exhibits highly reliable RS performance, including low cycle-to-cycle variability, concentrated distributions and low operating voltages, long-term retention capacity (&gt;104 s), and good cycle endurance (&gt;200 cycles). The mechanisms and physical models for enhanced switching performance are thoroughly elucidated, revealing that the formation of stable oxygen vacancy–dinitrogen complexes confines the conductive filament path and significantly reduces filament randomness during formation and rupture. This work renders an effective material engineering strategy for widening a path toward designing highly reliable nonvolatile data storage devices with striking switching performances.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"14 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142929118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0