Applied Physics Letters最新文献

Frequency-multiplexed terahertz multiple vortex beam generation 频率复用太赫兹多涡旋波束产生

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-05-16 DOI: 10.1063/5.0261433

Yu Tokizane, Mathias Hedegaard Kristensen, Seigo Ohno, Jérôme Degert, Eric Freysz, Etienne Brasselet, Takeshi Yasui, Emmanuel Abraham

引用次数: 0

Spray solution combustion synthesis of undoped Ca3Co4O9: High thermoelectric performance through grain orientation and moderate texture 喷雾溶液燃烧合成未掺杂的Ca3Co4O9：通过晶粒取向和适度织构获得高热电性能

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-05-16 DOI: 10.1063/5.0271395

Stanislav Yurlov, Evgeniya Chernyshova, Ksenia Stepanova, Sergey Yudin, Xianli Su, Dmitry Moskovskikh, Vladimir Khovaylo, Sergey Roslyakov

{"title":"Spray solution combustion synthesis of undoped Ca3Co4O9: High thermoelectric performance through grain orientation and moderate texture","authors":"Stanislav Yurlov, Evgeniya Chernyshova, Ksenia Stepanova, Sergey Yudin, Xianli Su, Dmitry Moskovskikh, Vladimir Khovaylo, Sergey Roslyakov","doi":"10.1063/5.0271395","DOIUrl":"https://doi.org/10.1063/5.0271395","url":null,"abstract":"Undoped Ca3Co4O9 was synthesized using spray solution combustion synthesis (SSCS) and consolidated through spark plasma sintering (SPS), resulting in a microstructure with moderate texturing [maximum Lotgering factor of 0.35 for the (004) plane] and strongly elongated, densely packed grains oriented perpendicular to the pressing direction. The presence of texture mainly influences the electrical conductivity of the obtained material, which becomes comparable with values reported in the literature for doped Ca3Co4O9. These features allowed one to achieve in the undoped Ca3Co4O9 thermoelectric figure of merit zT of 0.35 at 1050 K, which determines the importance of microstructural architecture. The study highlights that although texturing contributes to increased electrical conductivity, the synergistic combination of grain elongation and boundary architecture is key to achieving significant improvements in the performance of layered materials, demonstrating the importance of optimizing microstructural characteristics to improve functionality. Cobaltite obtained by this route has advantages over the others, due to the significant reduction in ceramic production time, as well as low cost, without the need for expensive alloying elements.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"14 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144067136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Shear horizontal mode surface acoustic wave resonator with ultra-high electromechanical coupling based on the X-cut LNOI acoustic platform 基于X-cut LNOI声学平台的超高机电耦合剪切水平型表面声波谐振器

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-05-16 DOI: 10.1063/5.0257796

Tiancheng Luo, Qibin Zeng, Weifan Cai, Zhi Shiuh Lim, Shengwei Zeng, Samantha Faye Duran Solco, Zhen Ye, Chee Kiang Ivan Tan, Seeram Ramakrishna, Huajun Liu

引用次数: 0

Thermal transport and accommodation coefficient at the air–MoS2 interface 空气-二硫化钼界面处的热输运和容纳系数

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-05-16 DOI: 10.1063/5.0270995

Dongsheng Li, Xiaona Huang, Dezhao Huang, Nan Zhang, Dongmei Liao, Zhaofu Zhang, Shijing Wu, Yanan Yue

{"title":"Thermal transport and accommodation coefficient at the air–MoS2 interface","authors":"Dongsheng Li, Xiaona Huang, Dezhao Huang, Nan Zhang, Dongmei Liao, Zhaofu Zhang, Shijing Wu, Yanan Yue","doi":"10.1063/5.0270995","DOIUrl":"https://doi.org/10.1063/5.0270995","url":null,"abstract":"Heat conduction between air molecules and solid interfaces is substantial for thermal management in nanoelectronics devices. Such a process, governed by collisions between air molecules and the surface, is ascribed to the thermal accommodation coefficient (TAC). However, quantifying the TAC in miniaturized devices remains a significant challenge due to the limitation of measuring at small scales. Here, we characterized the heat conduction between air molecules and few-layer MoS2 at various temperatures using Raman spectroscopy, revealing several orders of magnitude higher values than bulk surfaces. The equivalent heat convection coefficient decreases from 9.35 × 104 to 7.09 × 104 W/m2K for temperatures ranging from 308 to 345 K. In addition, the TAC values are further determined based on the kinetic theory of air molecules, with the values decreasing from 0.88 to 0.71 as temperature increases. This is attributed to the increased kinetic energy mismatch between air molecules and the solid surface at higher temperatures. These findings deepen our understanding of heat conduction at the air–MoS2 interface and provide valuable insights for advancing thermal management strategies in nanoscale electronic devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"120 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144066817","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optical identification and anti-counterfeiting based on plasmonic core–shell nanoparticles with Fano resonance 基于范诺共振等离子体核壳纳米粒子的光学识别与防伪

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-05-16 DOI: 10.1063/5.0262965

Nga Vu, Mohamed Farhat, Chien-Hao Liu, Pai-Yen Chen

{"title":"Optical identification and anti-counterfeiting based on plasmonic core–shell nanoparticles with Fano resonance","authors":"Nga Vu, Mohamed Farhat, Chien-Hao Liu, Pai-Yen Chen","doi":"10.1063/5.0262965","DOIUrl":"https://doi.org/10.1063/5.0262965","url":null,"abstract":"Fano resonance with an asymmetric and ultrasharp resonant line shape has been extensively studied in various light scattering scenes, unlocking several applications for sensing, information processing, and optical identification. Fano resonance appearing in multilayered nanoparticles (NPs) is particularly intriguing as its sharp and comb-like resonant line shape may enable optical identification at the nanoscale. We herein propose the concept of the optical physical unclonable function (PUF) based on the scattering responses of core–shell (plasmonic-dielectric) NPs. Specifically, the sharp, asymmetric spectral responses near the Fano resonance frequency, which are highly sensitive to perturbations (e.g., nanomanufacturing imperfections), can be exploited as a unique electromagnetic fingerprint for PUF-based identification and anti-counterfeiting applications. Here, we theoretically and statistically demonstrate that scattering from Fano-resonant multilayered NPs can be regarded as a perfect entropy source for the generation of PUF encryption keys, with outstanding performance in terms of uniqueness, randomness, encoding capacity, and NIST randomness test results. The proposed optical PUF opens pathways to implement nano-tags for optical identification, authentication, and anti-counterfeiting applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"29 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144066821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhanced electrical stability in IGZO TFTs through passivation effects of PTFE in the back-channel layer 通过后通道层中PTFE的钝化作用增强了IGZO tft的电稳定性

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-05-15 DOI: 10.1063/5.0252761

Jae Won Na, Kunho Moon, I. Sak Lee, Kyungho Park, Hwa Seon Kim, Si Joon Kim, Hyun Jae Kim

{"title":"Enhanced electrical stability in IGZO TFTs through passivation effects of PTFE in the back-channel layer","authors":"Jae Won Na, Kunho Moon, I. Sak Lee, Kyungho Park, Hwa Seon Kim, Si Joon Kim, Hyun Jae Kim","doi":"10.1063/5.0252761","DOIUrl":"https://doi.org/10.1063/5.0252761","url":null,"abstract":"This research proposes a selective polytetrafluoroethylene (PTFE) doping strategy to enhance the electrical stability of indium gallium zinc oxide (IGZO) thin-film transistors (TFTs). In contrast to conventional single-layer PTFE-doped IGZO TFTs, which increase electrical stability but face a trade-off with reduced mobility due to the uniform distribution of PTFE throughout the layer, this strategy confines PTFE to the back-channel region of the IGZO layer. By preventing PTFE from entering the effective channel where electron transport occurs, mobility loss is minimized, and stability is significantly improved. Compared to conventional IGZO TFTs, the proposed approach reduces threshold voltage shifts under positive bias stress from 4.94 to 2.69 V and under negative bias illumination stress from 16.63 to 10.84 V, all without mobility degradation. The localized PTFE in the back-channel acts as a passivation layer, reducing interactions with oxygen and moisture in the environment. This selective doping approach provides an effective solution for improving the performance and stability of IGZO-based TFTs in advanced display technologies.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"23 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144066402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Microalloying suppresses the formation of ultrastable Ce-based bulk metallic glasses 微合金化抑制了超稳定ce基大块金属玻璃的形成

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-05-15 DOI: 10.1063/5.0260846

Y. Zhao, B. Zhang, K. Sato, Wei-Hua Wang

引用次数: 0

Suppression of indium out-diffusion during molecular beam epitaxy growth of CdTe on InSb substrates InSb基底上CdTe分子束外延生长过程中铟向外扩散的抑制

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-05-15 DOI: 10.1063/5.0266829

Tyler T. McCarthy, Zheng Ju, Allison M. McMinn, Xin Qi, Fikri Aqariden, Pok-Kai Liao, Pradip Mitra, Yong-Hang Zhang

{"title":"Suppression of indium out-diffusion during molecular beam epitaxy growth of CdTe on InSb substrates","authors":"Tyler T. McCarthy, Zheng Ju, Allison M. McMinn, Xin Qi, Fikri Aqariden, Pok-Kai Liao, Pradip Mitra, Yong-Hang Zhang","doi":"10.1063/5.0266829","DOIUrl":"https://doi.org/10.1063/5.0266829","url":null,"abstract":"While HgCdTe remains the workhorse material for high-performance infrared (IR) detectors, there is still an ever-increasing demand for devices with lower costs and minimal defect densities. Epitaxial HgCdTe is typically grown on either low-cost Si substrates utilizing a CdTe virtual substrate with a large lattice mismatch or high-cost bulk CdZnTe substrates. Although high-quality CdTe epilayers can be successfully grown by molecular beam epitaxy on lattice-matched InSb (100) and (211)B substrates, InSb substrates are not used due to In out-diffusion and contamination concerns. This paper reports a comparison study of the different MBE processes of CdTe growth on InSb substrates. A compound CdTe cell and two individual elemental Cd and Te effusion cells were used under different growth conditions, Cd-rich vs Te-rich. CdTe epilayers grown on InSb under Cd-rich conditions using single elemental Cd and Te cells were shown to be of higher quality with significantly reduced In out-diffusion in regard to the standard CdTe growth process under Te-rich conditions using a compound CdTe cell and a Te cell. High-quality CdTe epilayers were achieved with a high-resolution x-ray diffraction FWHM linewidth of 35 arcsec and In concentrations below 1015 cm−3 determined from secondary ion mass spectrometry. A heavy Cd soak of the InSb surface prior to growth initiation of the CdTe layer may also suppress the out-diffusion of In and the subsequent formation of the In–Te alloy. The increase in CdTe epilayer quality under Cd-rich conditions using elemental Cd and Te cells is found to be consistent for both (100) and (211) orientations.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"25 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144066406","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Oriented nanocrystalline silicon oxide contact enables excellent passivation for silicon solar cells 定向纳米晶氧化硅接触为硅太阳能电池提供了良好的钝化性能

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-05-15 DOI: 10.1063/5.0254244

Yang Li, Xiyang Geng, Yuhe Zheng, Yonglin Ye, Min Li, Xuying Duan, Junhua Xu, Ruilong Zhang, Shaohua Liu, Wenkai Zhou, Xingliang Li, Liting Wang, Guoping Huang, Feng Zhu

{"title":"Oriented nanocrystalline silicon oxide contact enables excellent passivation for silicon solar cells","authors":"Yang Li, Xiyang Geng, Yuhe Zheng, Yonglin Ye, Min Li, Xuying Duan, Junhua Xu, Ruilong Zhang, Shaohua Liu, Wenkai Zhou, Xingliang Li, Liting Wang, Guoping Huang, Feng Zhu","doi":"10.1063/5.0254244","DOIUrl":"https://doi.org/10.1063/5.0254244","url":null,"abstract":"Silicon oxide (SiOx) is often used to provide powerful passivation for the crystalline silicon (c-Si) solar cells; however, conventional SiOx passivated contacts are typically amorphous and defective, with low electrical conductivity. In this study, we introduce a sol-crystallization induction (SCI) method that enables the growth of compact, less defective, and vertically oriented SiOx (v-SiOx) passivated contacts on the c-Si surface. Compared to a-SiOx:H, v-SiOx demonstrates enhanced carrier concentration and vertical conductivity, forming an efficient electron-selective conduction contacts. By optimizing the v-SiOx nanocrystalline contact, we achieved an open-circuit voltage (VOC) of 746 mV and a short-circuit current density (JSC) of 41.54 mA cm−2 for the tunnel oxide passivated contact (TOPCon) solar cells, resulting in a power conversion efficiency (PCE) exceeding 26.01%. The promising SiOx passivation is expected to offer a significant support for the further development of high-efficiency c-Si solar cells, both in TOPCon and silicon heterojunction (SHJ) technologies.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"30 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144066408","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optimization of HWCVD-grown i-a-Si:H films through synergistic adjustment of hydrogen dilution ratio and hot-wire temperature 通过调节氢稀释比和热线温度来优化hwcvd生长的i-a-Si:H薄膜

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-05-15 DOI: 10.1063/5.0268989

Hongchen Meng, Xiaoyuan Wu, Guanfa Zhong, Lang Zhou

引用次数: 0