Applied Physics Letters最新文献

Charge-state control of carbon-related optical absorption in AlN AlN中碳相关光吸收的电荷态控制

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-08-31 DOI: 10.1063/5.0347879

Helen C. Robinson,Daniil Danilin,Md. Shafiqul Islam Mollik,Darshana Wickramaratne,John L. Lyons,Vladimir Fedorov,Sergey Mirov,M. E. Zvanut

引用次数: 0

Reversibly strain engineering and electric-field control of crystal symmetry in multiferroic oxides 多铁氧化物晶体对称性的可逆应变工程与电场控制

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-08-31 DOI: 10.1063/5.0257648

Fei Sun,Chao Chen,Deyang Chen,Minghui Qin,Xubing Lu,Xingsen Gao,Christopher T. Nelson,Jun-Ming Liu

{"title":"Reversibly strain engineering and electric-field control of crystal symmetry in multiferroic oxides","authors":"Fei Sun,Chao Chen,Deyang Chen,Minghui Qin,Xubing Lu,Xingsen Gao,Christopher T. Nelson,Jun-Ming Liu","doi":"10.1063/5.0257648","DOIUrl":"https://doi.org/10.1063/5.0257648","url":null,"abstract":"Multiferroic oxides, such as BiFeO3, have garnered significant attention due to their coupled ferroelectric, magnetic, and elastic properties, offering exciting opportunities for multifunctional device applications. Controlling phase transitions in these materials is critical for tuning their physical properties and achieving desired functionalities. While numerous studies have focused on ferroelectric–ferroelectric transitions at rhombohedral–tetragonal morphotropic phase boundaries, far less attention has been given to the ferroelectric–antiferroelectric phase boundaries. Such systems hold promise for discovering novel physical phenomena, such as reversible phase transitions, enhanced piezoelectricity, and magnetoelectric coupling. In this work, we report a reversible antiferroelectric-to-ferroelectric phase transition in La-doped BiFeO3 thin films. By modulating the residual strain via film thickness, an antiferroelectric orthorhombic (O) phase is stabilized within a ferroelectric rhombohedral (R) phase matrix. Under an external electric field, the phase transitions reversibly between these two states. This discovery not only enriches the understanding of O/R morphotropic phase boundaries but also provides a potential pathway for developing magnetoelectric devices with enhanced functionality.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"12 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148894024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Evidence of micrometer-scale ion damage in (010), (110), and (011) β-Ga2O3 epitaxial layers （010）、（110）和(011)β-Ga2O3外延层中微米级离子损伤的证据

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-08-31 DOI: 10.1063/5.0340749

Carl Peterson,Chinmoy Nath Saha,Yizheng Liu,James S. Speck,Sriram Krishnamoorthy

{"title":"Evidence of micrometer-scale ion damage in (010), (110), and (011) β-Ga2O3 epitaxial layers","authors":"Carl Peterson,Chinmoy Nath Saha,Yizheng Liu,James S. Speck,Sriram Krishnamoorthy","doi":"10.1063/5.0340749","DOIUrl":"https://doi.org/10.1063/5.0340749","url":null,"abstract":"We report the experimental observation of charge depletion up to 11.5 μm deep in (010), (110), and (011) β-Ga2O3 epitaxial layers due to ion damage from sputtering and inductively coupled plasma (ICP) etching processes, whereas charge depletion in (001) β-Ga2O3 epitaxial layers was minimal. The orientation-dependent reduction in C–V-measured charge density was first observed in NiOx reactively sputtered heterojunction p–n diodes (HJDs). When compared to reference low-damage Schottky barrier diodes (SBDs), the sputtered HJDs showed a 9.4× increase in the specific on resistance (Ron,sp) and an 85% reduction in net donor concentration (ND − NA) at zero bias for sputter-damaged HJDs on (010) epitaxial layers, whereas HJDs on (001) remained unchanged. Similarly, sputtered SiO2 caused a reduction in ND − NA, extending 11.5 μm into the (010) material. Next, SBDs were fabricated on β-Ga2O3 surfaces previously etched via a BCl3 based ICP process and compared to SBDs on un-etched surfaces. The (010) SBDs on etched surfaces exhibited a 7.7× increase in Ron,sp and a 91% reduction in ND − NA at zero bias, whereas the (001) etched diodes exhibited little change. Additionally, (110) and (011) diodes fabricated on ICP damaged surfaces also showed an ∼82% reduction in ND − NA at zero bias, indicating that the (110) and (011) orientations are also susceptible to ion damage. Damage in the (010), (110), and (011) diodes is potentially caused by energetic ions that travel into the open channels present along the [010] direction and create compensating point defects, which could potentially diffuse further.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"56 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148894096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhanced interlayer coupling and slowed carrier relaxation in MXene (Ti3C2Tx) under hydrostatic pressure 静水压力下MXene （Ti3C2Tx）的层间耦合增强，载流子弛豫减慢

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-08-31 DOI: 10.1063/5.0349753

Runxing Hao,Xianghui Deng,Yanxia Wu,Yuanfei Jiang,Xiaomin Su,Mingxing Jin,Qingyi Li

{"title":"Enhanced interlayer coupling and slowed carrier relaxation in MXene (Ti3C2Tx) under hydrostatic pressure","authors":"Runxing Hao,Xianghui Deng,Yanxia Wu,Yuanfei Jiang,Xiaomin Su,Mingxing Jin,Qingyi Li","doi":"10.1063/5.0349753","DOIUrl":"https://doi.org/10.1063/5.0349753","url":null,"abstract":"MXene materials hold great promise for flexible pressure-sensing applications; however, the evolution of their carrier transport and energy relaxation processes under external pressure remains poorly understood. In this work, we systematically investigate the photoexcited ultrafast dynamics of the prototypical MXene Ti3C2Tx under hydrostatic pressures ranging from 0.7 to 6.4 kbar. Our results reveal that with increasing pressure, the relaxation of the excited-state absorption peak centered at ∼520 nm is significantly retarded, manifested by a monotonic increase in both the electron–electron scattering time (τ1) and the electron–phonon scattering time (τ2). The counterintuitive pressure-induced slowdown of carrier relaxation finds its origin in the synergistic effects of enhanced inter-flake charge hopping, reduced carrier densities, and weakened electron–phonon coupling. Furthermore, the accelerated relaxation of the plasmon bleach peak with increasing pressure provides direct evidence for improved lattice cooling efficiency due to weakened electron–phonon coupling and enhanced interlayer thermal diffusion. Collectively, our findings establish a microscopic physical picture of pressure-modulated interlayer coupling and ultrafast dynamics in MXenes, offering new experimental benchmarks and providing a microscopic foundation for the understanding of pressure-sensing mechanisms in MXene-based devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"10 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148894159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Predictive first-principles simulations for co-designing next-generation energy-efficient AI systems 共同设计下一代节能人工智能系统的预测第一性原理模拟

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-08-31 DOI: 10.1063/5.0333458

Denis Mamaluy,Md Rahatul Islam Udoy,Juan P. Mendez,Ben Feinberg,Wei Pan,Ahmedullah Aziz

引用次数: 0

The recombination mechanism and defect energy levels of Ag-doped ZnSnN2/ZnSnN2 pn homojunction solar cells 掺银ZnSnN2/ZnSnN2 pn均结太阳能电池的复合机理及缺陷能级

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-08-31 DOI: 10.1063/5.0342923

Fan Ye,Qian Gao,Qiao Tang,Yi-Zhu Xie,Ying Liu,Chun-Yan Yu,Fan Wang,Dong-Ping Zhang,Xing-Min Cai

{"title":"The recombination mechanism and defect energy levels of Ag-doped ZnSnN2/ZnSnN2 pn homojunction solar cells","authors":"Fan Ye,Qian Gao,Qiao Tang,Yi-Zhu Xie,Ying Liu,Chun-Yan Yu,Fan Wang,Dong-Ping Zhang,Xing-Min Cai","doi":"10.1063/5.0342923","DOIUrl":"https://doi.org/10.1063/5.0342923","url":null,"abstract":"The photovoltaic performance of ZnSnN2 homojunction has never been studied. Here, ZnSnN2 homojunction solar cells with Ag-doped ZnSnN2 as the p-type layer are fabricated with magnetron sputtering deposition, and the mechanism limiting the photovoltaic performance is revealed. The junction is abrupt. The current transport is dominated by thermionic emission below 320 K and generation-recombination (GR) in the space charge region in 330–380 K. Below 320 K, the short circuit current density and the open circuit voltage are limited by nonradiative interface recombination. The open circuit voltage loss also results from interfacial barrier height inhomogeneity, which obeys the Gaussian distribution model or the temperature fluctuation of interface barrier heights for holes. At higher temperatures, deep energy levels in the middle of the bandgap result in the GR in the space charge region. One shallow energy level at 0.13 eV and one interface energy level at 0.72 eV above the valence band maximum are observed. The former is likely induced by substitutional Ag-doping.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"47 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148894163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fast speed UV photodetector with high responsivity based on ZnO/MgZnO core–shell nanowires 基于ZnO/MgZnO核壳纳米线的高速高响应紫外光电探测器

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-08-31 DOI: 10.1063/5.0335549

Jiahao Zhang,Jian Chu,Luhua Chen,Xiangzhe Zeng,Yang Zhang,Yi Wang,Jinhui Song

{"title":"Fast speed UV photodetector with high responsivity based on ZnO/MgZnO core–shell nanowires","authors":"Jiahao Zhang,Jian Chu,Luhua Chen,Xiangzhe Zeng,Yang Zhang,Yi Wang,Jinhui Song","doi":"10.1063/5.0335549","DOIUrl":"https://doi.org/10.1063/5.0335549","url":null,"abstract":"Ultraviolet (UV) photodetectors based on zinc oxide (ZnO) wide-bandgap semiconductors have been intensively explored for applications in environmental monitoring, optical communication, and biosensing. However, conventional ZnO-based photodetectors often suffer from limited responsivity and relatively slow photoresponse speeds, which severely restrict their practical applications. Herein, we report a highly sensitive and fast-responsive photodetector based on ZnO/MgZnO core–shell radial-heterostructured nanowires (NWs) through radial interface engineering. The introduction of a wider bandgap MgZnO shell onto ZnO NWs forms a radial ZnO/MgZnO heterojunction, which introduces a built-in electric field that effectively promotes the separation and collection of photogenerated carriers. The optimized device exhibits a fast response time of 0.41/2.30 s (rise/decay) and a high responsivity of 0.75 A/W at zero bias. Furthermore, this study reveals a nonlinear relationship between the MgZnO shell thickness and the photoresponsivity of the device, and identifies the optimal MgZnO shell thickness for optimizing device performance. These results demonstrate that core–shell heterointerface engineering is an effective strategy for balancing responsivity and response speed in ZnO-based UV photodetectors.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"80 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148895923","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Erratum: “Electron spin relaxation in bulk GaAs at room temperature: A Monte Carlo-based quantitative study” [Appl. Phys. Lett. 128 , 082401 (2026)] 勘误：“室温下体GaAs中的电子自旋弛豫：基于蒙特卡洛的定量研究”[l]。理论物理。Lett. 128,082401 (2026)]

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-08-31 DOI: 10.1063/5.0352233

Yuzo Ohno,Satoshi Iba

引用次数: 0

Rotating magnetocaloric effect in sintered La(Fe,Mn,Si)13H z plates 烧结La(Fe,Mn,Si)13H - z板的旋转磁热效应

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-08-31 DOI: 10.1063/5.0339017

Rafael Almeida,Tomás Ventura,Ricardo Moura Costa Pinto,João Oliveira Silva,Konrad Loewe,Rodrigo Kiefe,João Sequeira Amaral,João Pedro Araújo,João Horta Belo

引用次数: 0

Electronic origin of structural stability of bcc refractory alloys from first-principles calculations 从第一性原理计算bcc耐火合金结构稳定性的电子起源

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-08-31 DOI: 10.1063/5.0350870

Yuling Fu,Pengjing Liu,Hualei Zhang,Xiangdong Ding,Jun Sun

{"title":"Electronic origin of structural stability of bcc refractory alloys from first-principles calculations","authors":"Yuling Fu,Pengjing Liu,Hualei Zhang,Xiangdong Ding,Jun Sun","doi":"10.1063/5.0350870","DOIUrl":"https://doi.org/10.1063/5.0350870","url":null,"abstract":"To enable an intuitive, rapid, and universal evaluation of the structural stability of body-centered-cubic (bcc) refractory alloys, we propose the “band-filling stability index” (BFSI) derived from the electronic density of states. We establish a correlation between BFSI and structural stability, showing that BFSI = 0.00 corresponds to maximum stability, whereas BFSI &lt; 0.00 indicates reduced stability. The electronic origin of stability under varying BFSI conditions lies in the deviation of Fermi level from the pseudogap bottom. The modified BFSI captures a complex, non-linear dependence of stability on valence electron concentration (VEC), whereas the previous fraction of occupied bonding states (gocc/gbond) holds a simple linear relationship only in the low VEC range. The identified relationship between BFSI and VEC enables point-to-point stability prediction, bypassing conventional computation-intensive high-throughput screening methods. Furthermore, we find that enhanced stability is often accompanied by reduced ductility, consistent with existing experimental observations. The universality and reliability of our findings are rigorously validated across diverse bcc refractory alloys. This work provides a universal, electronic-structure-driven paradigm for efficiently exploring high-stability bcc refractory alloys.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"28 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148894017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0