Applied Physics Letters最新文献

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Magneto-optical trap with a hollow grating and an additional retroreflected laser beam 具有中空光栅和附加反向反射激光束的磁光阱
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2025-06-18 DOI: 10.1063/5.0250597
Akifumi Takamizawa, Ryohei Hokari, Sota Kagami, Thu H. H. Le, Kenta Matsumoto, Ryohei Takei, Ken Hagimoto, Shinya Yanagimachi
{"title":"Magneto-optical trap with a hollow grating and an additional retroreflected laser beam","authors":"Akifumi Takamizawa, Ryohei Hokari, Sota Kagami, Thu H. H. Le, Kenta Matsumoto, Ryohei Takei, Ken Hagimoto, Shinya Yanagimachi","doi":"10.1063/5.0250597","DOIUrl":"https://doi.org/10.1063/5.0250597","url":null,"abstract":"A magneto-optical trap of cesium atoms was generated by applying a circularly polarized cooling laser beam onto a reflective two-dimensional diffraction grating with an aperture and by retroreflecting the incident beam passing through the aperture while reversing the circular polarization. The cooling laser beams comprised the incident, retroreflected, and four diagonally diffracted beams at an angle of 50° with respect to the normal direction of the grating surface. The intensity of the retroreflected beam was carefully adjusted to balance the radiation forces acting on the atoms. A significant number of cold atoms (7.0 × 106) were captured, in spite of the difficulty in a magneto-optical trap of cesium atoms, using nonorthogonal cooling beams owing to the high nuclear spin. The significance of the retroreflected beam in the trapping process was highlighted when the intensity of the retroreflected beam was reduced, resulting in the absence of trapped atoms. Notably, the cold atom cloud was generated near the edge of the region, where all the cooling beams were overlapped. The phenomenon is explained by the numerical calculations of the radiation forces considering all the Zeeman sublevels in the cooling transition and the Gaussian intensity profile of the incident beam.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"12 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144319437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Acoustic multi-mode interference in glide-reflection symmetric interfaces 滑模-反射对称界面中的声多模干涉
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2025-06-18 DOI: 10.1063/5.0265329
Yuzhong Zhou, Tian Sang, Bolun Hu, Yueke Wang
{"title":"Acoustic multi-mode interference in glide-reflection symmetric interfaces","authors":"Yuzhong Zhou, Tian Sang, Bolun Hu, Yueke Wang","doi":"10.1063/5.0265329","DOIUrl":"https://doi.org/10.1063/5.0265329","url":null,"abstract":"This study presents a glide-reflection (GR) symmetrical phononic crystal (PC), and the mismatch of the Wannier center between two PCs leads to the emergence of edge states. By stacking multiple GR symmetric PC interfaces, the coupled edge states (CES) are found, which originate from the coupling between the adjacent interfaces. The multi-mode interference (MMI) effects of CESs were predicted based on finite element method simulation and confirmed by an acoustic experiment. In a further way, a topological edge state frequency splitter based on MMI effects was designed and demonstrated by both numerical simulations and experiments. Our research provides insights for the design of acoustic devices such as filters and couplers and may contribute to the advancement of acoustic signal processing.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"38 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144319438","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Markov chain Monte Carlo detector tomography applied to a NbTiN nanobridge 马尔可夫链蒙特卡罗探测器层析成像技术在NbTiN纳米电桥中的应用
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2025-06-18 DOI: 10.1063/5.0271909
F. B. Baalbergen, I. E. Zadeh, M. P. van Exter, M. J. A. de Dood
{"title":"Markov chain Monte Carlo detector tomography applied to a NbTiN nanobridge","authors":"F. B. Baalbergen, I. E. Zadeh, M. P. van Exter, M. J. A. de Dood","doi":"10.1063/5.0271909","DOIUrl":"https://doi.org/10.1063/5.0271909","url":null,"abstract":"We demonstrate the use of a flexible and highly accurate Markov chain Monte Carlo quantum detector tomography method as a minimization algorithm to best describe the response of an efficient 120 nm wide NbTiN superconducting nanobridge single photon detector. Separation of the internal quantum efficiency and external quantum efficiency is possible due to the difference in saturation behavior of an ideal one-photon threshold detector as compared to a detector with non-unity one-photon internal quantum efficiency. From a statistical analysis of our measurements (at T=(4.23 ± 0.01) K, I=(29.4 ± 0.1) μA, I/Iswitch=(0.90 ± 0.01)), we find an external quantum efficiency of η=(1.60 ± 0.05)×10−6, a one-photon internal quantum efficiency of p1=0.568 ± 0.008, and a unity multi-photon (two or more) internal quantum efficiency.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"234 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144319491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigating the temperature-dependent electro-optic behaviors in La-doped PMN-PT transparent ceramics 掺la PMN-PT透明陶瓷的温度依赖性电光行为研究
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2025-06-18 DOI: 10.1063/5.0267936
Guoqing Shi, Yaqi Wang, Menghang Sang, Miao Yuan, Mengjun Wu, Jian Zhu, Shuai Liu, Zhitong Liu, Xingui Xie, Sirui Cheng, Yalin Qin, Zheng Wen, Jianyi Liu, Yongcheng Zhang
{"title":"Investigating the temperature-dependent electro-optic behaviors in La-doped PMN-PT transparent ceramics","authors":"Guoqing Shi, Yaqi Wang, Menghang Sang, Miao Yuan, Mengjun Wu, Jian Zhu, Shuai Liu, Zhitong Liu, Xingui Xie, Sirui Cheng, Yalin Qin, Zheng Wen, Jianyi Liu, Yongcheng Zhang","doi":"10.1063/5.0267936","DOIUrl":"https://doi.org/10.1063/5.0267936","url":null,"abstract":"Understanding the temperature-dependent electro-optic behaviors in (1 − x)[Pb(Mg1/3Nb2/3)O3]-x[PbTiO3] [(1 − x)PMN-xPT] is central to its device applications. In this work, 0.5 mol. % La-(1 − x)PMN-xPT transparent ceramics with different solid solution ratios (i.e., x = 0.10, 0.15, 0.20, 0.25) were fabricated to study the temperature-dependent electro-optic behaviors. Two distinct temperature dependencies are revealed: for 0.85PMN-0.15PT and 0.90PMN-0.10PT, the measured electro-optic coefficient decreases with increasing temperature, while for 0.75PMN-0.25PT and 0.80PMN-0.20PT, the electro-optic coefficient first increases and then decreases rapidly with the increase in temperature. Based on the temperature-dependent dielectric, ferroelectricity, x-ray diffraction, and piezoresponse domain image analysis, the ferroelectric–ferroelectric phase transition is suggested to play a dominant role, with the ferroelectric state to relaxor state transition providing an auxiliary enhancement. This study provides valuable insights into understanding temperature-dependent electro-optic behaviors and should be instructive for the design and optimization of advanced electro-optic devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"11 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144319443","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Insulating tip for scanning near-field microwave microscopes: Application to van der Waals semiconductor imaging 扫描近场微波显微镜用绝缘尖端:在范德华半导体成像中的应用
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2025-06-18 DOI: 10.1063/5.0268493
Kohei Yamasue, Koki Takano, Taiyo Ishizuka, Yasuo Cho
{"title":"Insulating tip for scanning near-field microwave microscopes: Application to van der Waals semiconductor imaging","authors":"Kohei Yamasue, Koki Takano, Taiyo Ishizuka, Yasuo Cho","doi":"10.1063/5.0268493","DOIUrl":"https://doi.org/10.1063/5.0268493","url":null,"abstract":"Scanning nonlinear dielectric microscopy, a scanning near-field microwave microscopy (SNMM) technique, has been effectively used for characterizing semiconductor materials and devices by detecting variations in capacitance between a conductive tip and sample. However, for semiconductors without surface insulating layers, either native oxides or intentionally fabricated ones, conventional conductive tips are unsuitable because direct tip–sample contact induces charge injection, hampering the imaging of intrinsic semiconductor properties, particularly dominant carrier concentration distributions. To address this limitation, we propose an insulating tip, prepared by depositing a thin insulating layer on a conductive tip. We demonstrate that this insulating tip enables the imaging of intrinsic semiconductor properties while preventing charge injection. Our approach can be extended to other SNMM techniques, thereby broadening their applications in semiconductor material and device characterization.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"167 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144319492","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Bonded β 12-borophene/hybrid honeycomb–kagome silicene heterostructure: A high-capacity anode with robust structural stability for Na-ion batteries 键合β 12-硼苯/杂化蜂窝状- kagome硅烯异质结构:一种结构稳定的高容量钠离子电池阳极
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2025-06-18 DOI: 10.1063/5.0263851
Junming Fan, Xiaobin Niu, Haiyuan Chen
{"title":"Bonded β 12-borophene/hybrid honeycomb–kagome silicene heterostructure: A high-capacity anode with robust structural stability for Na-ion batteries","authors":"Junming Fan, Xiaobin Niu, Haiyuan Chen","doi":"10.1063/5.0263851","DOIUrl":"https://doi.org/10.1063/5.0263851","url":null,"abstract":"The development of next-generation energy storage systems critically demands anode materials with exceptional ion storage capacity and structural robustness. Bonded heterostructures offer distinct advantages over conventional two-dimensional (2D) monolayers by synergistically stabilizing lattice frameworks through interfacial interactions. 2D hybrid lattices composed of honeycomb and kagome structures have garnered significant attention due to their unique geometries and tailored electronic states. Herein, via first-principles calculations, we propose a strongly bonded β12-borophene (β12-B)/hybrid honeycomb–kagome silicene (hhk-Si) heterostructure as a high-performance anode for lithium/sodium-ion batteries (LIBs/SIBs). This bonded configuration exhibits superior structural stability compared to van der Waals counterparts, as evidenced by machine learning-accelerated ab initio molecular dynamics simulations spanning an extended 100 ps timeframe. The heterostructure demonstrates intrinsic structural robustness during multi-ion intercalation, coupled with stable adsorption sites featuring ultralow diffusion barriers (Li: 0.35 eV; Na: 0.20 eV). Notably, the predicted maximum sodium storage capacity reaches 1823 mAh/g, outperforming both monolayers and most 2D heterostructures. These findings suggest that the proposed β12-B/hhk-Si is a promising anode for SIBs and paves the way for kagome–honeycomb hybrid lattices in energy storage applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"600 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144319575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The phase boundary of the β-α transition in Ga2O3 under high temperature and high pressure 高温高压下Ga2O3中β-α相变的相界
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2025-06-18 DOI: 10.1063/5.0274083
Dong Li, Shourui Li, Yi Zhang, Guangyu Qi, Xun Yang, Jun Li
{"title":"The phase boundary of the β-α transition in Ga2O3 under high temperature and high pressure","authors":"Dong Li, Shourui Li, Yi Zhang, Guangyu Qi, Xun Yang, Jun Li","doi":"10.1063/5.0274083","DOIUrl":"https://doi.org/10.1063/5.0274083","url":null,"abstract":"In this study, we reexamined the behavior of β-Ga2O3 in diamond anvil cell at room temperature under pressures up to 80.86 GPa using in situ high-pressure Raman scattering and angle-dispersive synchrotron radiation X-ray diffraction techniques. Argon was used as a quasi-hydrostatic pressure-transmitting medium. The phase transition from low-density β-Ga2O3 to high-density α-Ga2O3 was observed, beginning at approximately 20.57 GPa and completing in the pressure range of 39.70–42.29 GPa. The α-Ga2O3 phase remains stable up to approximately 80 GPa at ambient temperature, and the β-to-α phase transition is an irreversible reconstructive phase transition. A third-order Birch-Murnaghan equation of state fit to the unit-cell volume as a function of pressure yielded a zero-pressure bulk modulus B0 of 200.2(22) GPa for β-Ga2O3, with a pressure derivative B0′ of 3.0(11) GPa. For α-Ga2O3, the fit gave B0 = 354.8(43) GPa and B0′= 2.2(8) GPa. When B0′ was fixed at 4, a re-fit of the experimental data provided B0 = 267.9(7) GPa for the α-phase, which is higher than B0 = 182.6(7) GPa for the β-phase, indicating that α-Ga2O3 exhibits greater resistance to compression. Based on high-pressure experimental results for β-Ga2O3 at different temperatures, the phase boundary for the β-to-α transition, exhibiting a negative Clapeyron slope, is presented in this study. With increasing temperature, the onset pressure of the β-to-α transition gradually decreases, and the phase transition hysteresis effect weakens.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"44 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144319489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Cubic ReSTe as a high-performance thermoelectric material Cubic ReSTe是一种高性能热电材料
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2025-06-18 DOI: 10.1063/5.0268567
Haruka Matsumoto, Hiroto Isomura, Keita Kojima, Ryutaro Okuma, Hironori Ohshima, Chul-Ho Lee, Youichi Yamakawa, Yoshihiko Okamoto
{"title":"Cubic ReSTe as a high-performance thermoelectric material","authors":"Haruka Matsumoto, Hiroto Isomura, Keita Kojima, Ryutaro Okuma, Hironori Ohshima, Chul-Ho Lee, Youichi Yamakawa, Yoshihiko Okamoto","doi":"10.1063/5.0268567","DOIUrl":"https://doi.org/10.1063/5.0268567","url":null,"abstract":"We report thermoelectric properties of sintered samples of undoped, W-doped, and Sb-doped ReSTe crystallized in a cubic MoSBr-type structure. All samples exhibited p-type thermoelectric properties. ReSTe and Re0.993W0.007STe exhibited the largest dimensionless figure of merit ZT, reaching 0.4 at 660 K. This high performance is attributed to a large power factor owing to the degenerate semiconducting state realized by the strong spin–orbit coupling and low lattice thermal conductivity of the sintered samples. Furthermore, electronic band dispersion of ReSTe is almost flat at the bottom of the conduction band, suggesting that n-type ReSTe is expected to exhibit much higher performance than p-type ReSTe.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"8 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144319441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High- κ HfO2/ZrO2 superlattice for BEOL-compatible GAAFET memory device 用于beol兼容GAAFET存储器件的高κ HfO2/ZrO2超晶格
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2025-06-18 DOI: 10.1063/5.0274127
Chen-You Wei, Kuei-Chun Liao, Yi-Ju Yao, Cheng-En Wu, Chien-Lung Chen, Chih-Chao Yang, Fu-Ju Hou, Guang-Li Luo, Yung-Hsien Wu, Yung-Chun Wu
{"title":"High- κ HfO2/ZrO2 superlattice for BEOL-compatible GAAFET memory device","authors":"Chen-You Wei, Kuei-Chun Liao, Yi-Ju Yao, Cheng-En Wu, Chien-Lung Chen, Chih-Chao Yang, Fu-Ju Hou, Guang-Li Luo, Yung-Hsien Wu, Yung-Chun Wu","doi":"10.1063/5.0274127","DOIUrl":"https://doi.org/10.1063/5.0274127","url":null,"abstract":"In this study, a high-κ HfO2/ZrO2 superlattice (SL-HZO) was utilized as the charge-trapping layer to develop a low-temperature polycrystalline silicon (LTPS)/SL-HZO GAAFET hybrid memory while removing the blocking oxide layer. The device was fabricated using green laser crystallization technology and low-temperature microwave annealing, ensuring compatibility with back-end-of-line processes. The LTPS/SL-HZO GAAFET operates at ±4 V/100 ns, achieving 106 cycles with minimal 12.5% memory window degradation and retention exceeding 10 years. Furthermore, the device demonstrates the potential for multi-bit storage and integrated logic operation capabilities. These features underscore its potential for in-memory computing and monolithic 3D integration applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"12 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144319490","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Chiral quasi-bound states in the continuum via Brillouin zone folding 通过布里渊区折叠的连续介质中的手性准束缚态
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2025-06-18 DOI: 10.1063/5.0269369
Jiangbin Li, Qilin Duan, Xin Dong, Zhou Yang, Yidan Hu, Jiahao Zhi, Shan Zhu, Huanyang Chen
{"title":"Chiral quasi-bound states in the continuum via Brillouin zone folding","authors":"Jiangbin Li, Qilin Duan, Xin Dong, Zhou Yang, Yidan Hu, Jiahao Zhi, Shan Zhu, Huanyang Chen","doi":"10.1063/5.0269369","DOIUrl":"https://doi.org/10.1063/5.0269369","url":null,"abstract":"Chiral quasi-bound states in the continuum (q-BICs) provide a way to investigate light–matter interactions. Currently, the chiral response is fundamentally constrained by the rapid decay of quality (Q-) factors with symmetry breaking, making the robustness of higher-Q particularly crucial. In this paper, we propose the metasurfaces composed of the double-skeleton-fan unit cells with sixfold rotational symmetry. Moreover, by introducing gap perturbation and scale perturbation, the guided modes originally below the light cone are folded above the light cone through Brillouin zone folding (BZF), enabling the q-BZF-BICs with enhanced Q-factors (Q > 106). Furthermore, by tuning the tilted extrusion parameters, near-perfect circularly polarized light (ellipticity χ = 0.99) is achieved in the parameter space. Notably, the extrinsic (circular dichroism CD = 0.98) and intrinsic chirality (CD = 0.97) are realized through simultaneous breaking of in-plane and out-of-plane symmetries. Chiral metasurfaces enable sensing, lasing, and pharmaceutical applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"70 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144319439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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