Applied Physics Letters最新文献

Efficiency droop of AlGaN-based deep-ultraviolet miniaturized light-emitting diodes under electrical stress

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-12-02 DOI: 10.1063/5.0226549

Xi Zheng, Sidan Ai, Tingwei Lu, Yurong Dai, Changdong Tong, Yijun Lu, Zhong Chen, Weijie Guo

引用次数: 0

Improved photoresponse performance of self-powered solar-blind UV photodetectors based on n-Si/n-Ga2O3/p-Li:NiO dual-junction

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-12-02 DOI: 10.1063/5.0242229

Xian Zhang, Zhiang Yue, Enqin Zhao, Shuaikang Wei, Chenfei Jiao, Meibo Xin, Kaiyuan Wang, Ruofan Zhai, Wenxuan Ye, Hui Wang, Yang Zhao

{"title":"Improved photoresponse performance of self-powered solar-blind UV photodetectors based on n-Si/n-Ga2O3/p-Li:NiO dual-junction","authors":"Xian Zhang, Zhiang Yue, Enqin Zhao, Shuaikang Wei, Chenfei Jiao, Meibo Xin, Kaiyuan Wang, Ruofan Zhai, Wenxuan Ye, Hui Wang, Yang Zhao","doi":"10.1063/5.0242229","DOIUrl":"https://doi.org/10.1063/5.0242229","url":null,"abstract":"The solar-blind photodetectors (SBPDs) based on the wide-bandgap semiconductor gallium oxide (Ga2O3) exhibit significant potential for applications in military, civilian, and medical fields. Although multiple structural designs of Ga2O3-based SBPDs have been proposed, their performance typically falls short of commercial standards. However, the photoresponse speed of most self-powered PDs decreases rapidly in the solar-blind region. To address this issue, we first prepared high-quality single-crystal β-Ga2O3 films using RF magnetron sputtering, which exhibit an average transmittance exceeding 85% across the 400–800 nm range and possess a relatively smooth surface. Subsequently, a superior performance self-powered SBPD of vertical structure of n-Si/n-Ga2O3/p-Li:NiO dual-junction was fabricated, which possesses a responsivity of 0.18 mA/W, a photo-to-dark current ratio of 395, rapid rise/decay times of 132/148 ms, and a specific detectivity of 1.57 × 109 Jones at 0 V bias under 254 nm illumination. The photocurrent of the device fully recovered to its initial level after experiencing changes in ambient temperature [from room temperature (RT) to 100 °C and back to RT], demonstrating robust stability in harsh environments. In addition, the valence band structures of p-Li:NiO and n-Ga2O3 were investigated in detail using XPS, and the working mechanism of the devices was analyzed based on the Fermi level alignment. The excellent performance of PDs can be attributed to the increased depletion layer width, which generates more photogenerated carriers. Additionally, the separation and transmission of photo-induced carriers are enhanced by the superposition of a double built-in electric field. Our strategy offers a promising approach for achieving high-performance Ga2O3-based photovoltaic PDs.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"139 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2024-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142758507","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Self-assembly of MoTe2 nanostructures and nanocomposites over centimeter-large areas via femtosecond laser

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-12-02 DOI: 10.1063/5.0240325

Lingrui Chu, Han Zhu, Ziqi Li, Saulius Juodkazis, Feng Chen

{"title":"Self-assembly of MoTe2 nanostructures and nanocomposites over centimeter-large areas via femtosecond laser","authors":"Lingrui Chu, Han Zhu, Ziqi Li, Saulius Juodkazis, Feng Chen","doi":"10.1063/5.0240325","DOIUrl":"https://doi.org/10.1063/5.0240325","url":null,"abstract":"The fabrication of patterned two-dimensional (2D) materials exhibits significant potential for advancing their electronic and optoelectronic applications. In this Letter, we demonstrate a rapid and scalable method for creating nanoscale periodic molybdenum ditelluride (MoTe2) nanostructures and mixed-dimensional heterostructures over a large area using direct femtosecond laser irradiation. Under intense femtosecond laser pulses, periodic energy deposition occurs in layered MoTe2 and subsequently induces the formation of MoTe2 periodic nanostructures. In addition, femtosecond laser ablation at a high repetition rate (1 MHz) results in the formation of numerous crystalline Te nanoparticles scattered on the surface of MoTe2 layers, creating mixed-dimensional Te/MoTe2 heterostructures. Notably, the fabrication of MoTe2 periodic nanostructures and mixed-dimensional heterostructures is driven by a self-assembled process. This technique enables the production of centimeter-scale MoTe2 periodic nanostructures and nanocomposites within 5 min, offering a cost-effective, lithography-free approach for fabricating periodically nanostructured 2D materials in large areas for practical applications in electronics, optoelectronics, catalysis, and sensing.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"12 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2024-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142758521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Polarization-induced two-dimensional hole gases in N-polar AlGaN/GaN heterostructures

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-12-02 DOI: 10.1063/5.0241444

Changkai Yu, Zexuan Zhang, Debdeep Jena, Huili Grace Xing, YongJin Cho

引用次数: 0

Tailoring nondiffracting structured lights along arbitrary three-dimensional trajectories via an inversed design

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-12-02 DOI: 10.1063/5.0240079

Yishu Wang, Juntao Hu, Wenjun Wei, Wenni Ye, Zhihao Ying, Xinzhong Li, Yixian Qian

引用次数: 0

When do we need Pbps photonic chips and what are the challenges?

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-12-02 DOI: 10.1063/5.0232053

Yikai Su, Yu He, Ting Wang, Xuhan Guo, Xi Xiao, Guo-Qiang Lo

引用次数: 0

Silicon-based light-emitting transistor with Ge(Si) nanoislands embedded in a photonic crystal: Control of the spectrum and spatial distribution of the emission

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-12-02 DOI: 10.1063/5.0239609

A. N. Yablonskiy, V. B. Shmagin, V. E. Zakharov, D. V. Yurasov, M. V. Shaleev, E. V. Demidov, A. N. Mikhaylov, D. I. Tetelbaum, E. E. Rodyakina, E. E. Morozova, D. V. Shengurov, S. A. Kraev, A. V. Novikov

{"title":"Silicon-based light-emitting transistor with Ge(Si) nanoislands embedded in a photonic crystal: Control of the spectrum and spatial distribution of the emission","authors":"A. N. Yablonskiy, V. B. Shmagin, V. E. Zakharov, D. V. Yurasov, M. V. Shaleev, E. V. Demidov, A. N. Mikhaylov, D. I. Tetelbaum, E. E. Rodyakina, E. E. Morozova, D. V. Shengurov, S. A. Kraev, A. V. Novikov","doi":"10.1063/5.0239609","DOIUrl":"https://doi.org/10.1063/5.0239609","url":null,"abstract":"Light-emitting transistors (LETs) represent the next step in the development of light-emitting diodes (LEDs), offering additional control over emission. In this work, the transport properties and spatial distribution of electroluminescence (EL) in the spectral range of 1.2–1.7 μm were studied for lateral p+-i-n+ LEDs based on silicon-on-insulator structures with self-assembled Ge(Si) islands embedded in photonic crystals. It is shown that due to the low mobility of holes and their effective trapping in the islands, the maximum EL yield is observed at the i/p+ junction of the LED. It is demonstrated that the sign and magnitude of the bias voltage applied to the substrate (to the gate) have a significant influence on the transport and emission properties of the LEDs with Ge(Si) islands, turning them into LETs. In particular, applying a negative gate voltage shifts the position of the maximum emission region from the i/p+ to the i/n+ junction of the LET, which is related to the formation of a hole conductivity channel near the buried oxide layer. The embedding of a specially designed photonic crystal in the i-region of the LET makes it possible to manage the spectral properties of the near-IR emission by changing the sign of the gate voltage. The results obtained may be useful for the future development of optoelectronic devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"3 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2024-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142758523","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Irreversible phase transition of the Fe50Mn30Cr10Co10 high entropy alloy under stress

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-12-02 DOI: 10.1063/5.0232551

Pan Wang, Lianyang Chen, Mingzhi Yuan, Jialin Li, Wenhao Li, Yi Yang, Shun Wan, Xin Li, Guoxia Wu, Xiaoling Zhou

{"title":"Irreversible phase transition of the Fe50Mn30Cr10Co10 high entropy alloy under stress","authors":"Pan Wang, Lianyang Chen, Mingzhi Yuan, Jialin Li, Wenhao Li, Yi Yang, Shun Wan, Xin Li, Guoxia Wu, Xiaoling Zhou","doi":"10.1063/5.0232551","DOIUrl":"https://doi.org/10.1063/5.0232551","url":null,"abstract":"The Fe50Mn30Cr10Co10 high entropy alloy has attracted research interest in recent years due to its ability to overcome the strength-ductility trade-off. A recent study reported that a nanolaminate dual-phase microstructure, derived from the bidirectional transformation of Fe50Mn30Cr10Co10 alloy under stress, might be the main reason for its exceptional mechanical properties. Here, we report a unidirectional and irreversible phase transition from a face-centered-cubic to a hexagonal-close-packed (HCP) structure in the Fe50Mn30Cr10Co10 alloy under stress, using the in situ high-pressure x-ray diffraction method. An almost pure HCP phase is obtained at pressures exceeding 20 GPa. It remains stable in further loading and unloading processes. Transmission electron microscopy analysis indicates that dislocation motion along the {111}⟨11 2¯⟩ slip system results in the irreversible phase transition and the formation of nanolamellar microstructures in the Fe50Mn30Cr10Co10 alloy. Our study provides insights into understanding the deformation mechanism of Fe50Mn30Cr10Co10 alloy and suggests the potential to design the alloy through high-pressure manufacturing.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"46 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2024-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142758520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Detection efficiency characterization for free-space single-photon detectors: Measurement facility and wavelength-dependence investigation

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-11-27 DOI: 10.1063/5.0226170

S. Virzì, A. Meda, E. Redolfi, M. Gramegna, G. Brida, M. Genovese, I. P. Degiovanni

引用次数: 0

Al@Al2O3 core-shell plasmonic design for the dilemma between high responsivity and low dark current of MoS2 photodetector

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-11-27 DOI: 10.1063/5.0236152

Ziquan Shen, Wanyu Wang, Zhe Xu, Kaixi Shi, Jinhua Li, Xuan Fang, Mingze Xu

{"title":"Al@Al2O3 core-shell plasmonic design for the dilemma between high responsivity and low dark current of MoS2 photodetector","authors":"Ziquan Shen, Wanyu Wang, Zhe Xu, Kaixi Shi, Jinhua Li, Xuan Fang, Mingze Xu","doi":"10.1063/5.0236152","DOIUrl":"https://doi.org/10.1063/5.0236152","url":null,"abstract":"The localized surface plasmon resonance (LSPR) effect induced by metal nanoparticles (NPs) can solve the problem of low light absorption in two-dimensional (2D) materials limited by atomic scale. However, the accompanying problem is the rise in dark current due to plenty of electrons from metal NPs injecting into the 2D materials, which decreases the performance of plasmonic photodetectors. Here, we designed the structure of Al NPs coated with Al2O3 by low temperature oxidation treatment method to balance the dilemma between high photoresponse and low dark current. Raman spectrum and finite-difference time-domain simulations were used to verify that Al2O3 does not affect the LSPR effect of Al NPs. Compared to that of the pristine MoS2/Al photodetector, the MoS2/Al@Al2O3 plasmonic photodetector achieved a fourfold decrease in dark current, threefold increase in detectivity, and 1.5-fold increase in responsivity. As a result, the optimized plasmonic device achieves a high responsivity of ∼1719 A/W, an excellent detectivity of ∼6.0 × 1011 Jones, and an ultra-fast response speed of ∼15 ns. Our work reveals that constructing metal NPs covered by ultra-thin oxide layer is a feasible strategy for plasmonic photodetectors to decrease dark current and achieve high performance index.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"72 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2024-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142742659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0