Applied Physics Letters最新文献

All-optical helicity-dependent switching in NiCo2O4 thin films NiCo2O4薄膜的全光螺旋相关开关

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-05-28 DOI: 10.1063/5.0253785

Ryunosuke Takahashi, Yann Le Guen, Suguru Nakata, Junta Igarashi, Julius Hohlfeld, Grégory Malinowski, Lingling Xie, Daisuke Kan, Yuichi Shimakawa, Stéphane Mangin, Hiroki Wadati

引用次数: 0

Inversion-sensing SiO2-based MOS capacitive synapse for neuromorphic computing 用于神经形态计算的基于sio2的反转感应MOS电容突触

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-05-28 DOI: 10.1063/5.0257074

Chi-Yi Kao, Jenn-Gwo Hwu

引用次数: 0

Interfacial thermal transport suppression by hydrogen insertion in an epitaxial Al/Si heterostructure 外延Al/Si异质结构中氢插入抑制界面热输运

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-05-28 DOI: 10.1063/5.0253324

Menglin Chang, Ziyuan Yuan, Nianjie Liang, Xing Fan, Yuxi Wang, Jiayi Li, Yu Deng, Xue-Jun Yan, Ming-Hui Lu, Bai Song, Hong Lu

{"title":"Interfacial thermal transport suppression by hydrogen insertion in an epitaxial Al/Si heterostructure","authors":"Menglin Chang, Ziyuan Yuan, Nianjie Liang, Xing Fan, Yuxi Wang, Jiayi Li, Yu Deng, Xue-Jun Yan, Ming-Hui Lu, Bai Song, Hong Lu","doi":"10.1063/5.0253324","DOIUrl":"https://doi.org/10.1063/5.0253324","url":null,"abstract":"Engineering of interfacial thermal transport is crucial for efficient heat-to-electricity conversion and cooling of electronic devices. Here, we achieve remarkably high interfacial thermal conductance in a series of aluminum/silicon heterostructures grown by molecular beam epitaxy, up to 0.49 GW m−2 K−1 at room temperature, which is ∼29% greater than state-of-the-art values. The pristine interface is near perfect without any notable defects, as confirmed by atomic-resolution transmission electron microscopy. Density functional theory calculations reveal the possible covalent bonding between Al and Si at the interface. Intriguingly, by inserting a monolayer of hydrogen atoms at the interface, the conductance can be reduced by ∼47%. Molecular dynamics simulations show that phonon transmission is primarily suppressed within the frequency range from 2 to 7 THz. Our work highlights the potential of manipulating interfacial thermal transport at the atomic scale and may facilitate diverse applications in thermal management and energy harvesting.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"36 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144165497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Development of millimeter-thick hexagonal boron nitride wafers and fast neutron detectors 毫米厚六方氮化硼晶片及快中子探测器的研制

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-05-28 DOI: 10.1063/5.0274262

G. Somasundaram, N. K. Hossain, Z. Alemoush, A. Tingsuwatit, J. Li, J. Y. Lin, H. X. Jiang

{"title":"Development of millimeter-thick hexagonal boron nitride wafers and fast neutron detectors","authors":"G. Somasundaram, N. K. Hossain, Z. Alemoush, A. Tingsuwatit, J. Li, J. Y. Lin, H. X. Jiang","doi":"10.1063/5.0274262","DOIUrl":"https://doi.org/10.1063/5.0274262","url":null,"abstract":"We report the attainment of millimeter-thick neutron detectors fabricated from quasi-bulk hexagonal boron nitride (h-BN) produced by halide vapor phase epitaxy (HVPE). Detection efficiencies of 0.7% and 0.5% in response to neutrons emitted from bare AmBe and Cf-252 sources, respectively, have been achieved, corresponding to a charge collection efficiency of about 38%. These results mark a significant improvement over our previous single-stack h-BN detectors, which were 90 μm thick and exhibited a detection efficiency of 0.1%. This enhancement is primarily attributed to the increased thickness of the h-BN layer, leading to a higher intrinsic detection efficiency. We also observed that the carrier mobility-lifetime (μτ) product increases as layers of h-BN are successively removed from the top by polishing, indicating that a degradation in h-BN's electronic properties with thickness is now a major limiting factor for achieving high charge collection efficiency. This finding highlights the need for further refinement in HVPE growth processes to produce h-BN wafers with both larger thicknesses and improved electronic properties. Nevertheless, the fabrication of millimeter-thick single-stack h-BN neutron detectors represents a major milestone in the application of h-BN for fast neutron detection.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"58 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144165023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Interfacial photonic-electronic synergy in dielectric nanocomposite transport layers for high-efficiency perovskite photovoltaics 高效钙钛矿光伏电池中介电纳米复合传输层的界面光电子协同作用

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-05-28 DOI: 10.1063/5.0263340

Jingyu Chu, Yubei Han, Liping Zhang, Lijie Sun, Yiwen Zhang

引用次数: 0

Broad-pH-value photocatalyst of Janus MXene monolayers functionalized with group VIA elements VIA基团官能化Janus MXene单层的宽ph值光催化剂

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-05-28 DOI: 10.1063/5.0268625

Hao-Hao Yang, Ze-Shan Liu, Jiao Zhao, Shi-Yun Zheng, Yao Zhao, Yan-Ru Kang, You-Jin Zheng, Yi-Ming Cao, Kun Xu, Qi Chen, Fang-Biao Wang, Xin Fan

{"title":"Broad-pH-value photocatalyst of Janus MXene monolayers functionalized with group VIA elements","authors":"Hao-Hao Yang, Ze-Shan Liu, Jiao Zhao, Shi-Yun Zheng, Yao Zhao, Yan-Ru Kang, You-Jin Zheng, Yi-Ming Cao, Kun Xu, Qi Chen, Fang-Biao Wang, Xin Fan","doi":"10.1063/5.0268625","DOIUrl":"https://doi.org/10.1063/5.0268625","url":null,"abstract":"Based on first-principles calculations, we conducted a systematic investigation into the photocatalytic performance of Janus MXene Y2COX (X = O, S, Se) monolayers. Our findings reveal that Y2COX monolayers exhibit exceptional photocatalytic overall water splitting capabilities. Benefiting from the asymmetry of the Janus structure and the differences in surface-terminated atoms, Y2COS and Y2COSe monolayers generate built-in electric fields (Eint) as high as 8.7 × 109 and 8.4 × 109 V/m, respectively, significantly promoting the effective separation of photogenerated electron–hole pairs. Additionally, Y2COX monolayers possess wide bandgaps and high electrostatic potential differences (ΔΦ), enabling efficient photocatalytic water splitting across a broad pH range (pH = 0–14). Furthermore, these monolayers exhibit outstanding optical absorption properties in the visible region, with a maximum absorption coefficient of up to 7.12 × 105 cm−1. This study provides important theoretical insights for developing photocatalytic overall water splitting materials with wide pH adaptability.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"29 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144165033","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Silicon-based van der Waals heteroepitaxy of PbSe with room-temperature sensitive mid-infrared response 室温敏感中红外响应的PbSe硅基van der Waals异质外延

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-05-28 DOI: 10.1063/5.0271152

Yu Wan, Jiafeng Hu, Yan Lu, Kangmin Leng, Zhendong Wang, Shengpeng Yuan, Zhe Cheng, Qisheng Wang

{"title":"Silicon-based van der Waals heteroepitaxy of PbSe with room-temperature sensitive mid-infrared response","authors":"Yu Wan, Jiafeng Hu, Yan Lu, Kangmin Leng, Zhendong Wang, Shengpeng Yuan, Zhe Cheng, Qisheng Wang","doi":"10.1063/5.0271152","DOIUrl":"https://doi.org/10.1063/5.0271152","url":null,"abstract":"Silicon integration of non-silicon semiconductors is always challenging due to the serious lattice and thermal expansion mismatch. In this study, we design a silicon-based van der Waals heteroepitaxy of infrared semiconductors through the graphene buffer layer. Through density functional theory calculations, we demonstrate that graphene-modified SiO2 surfaces exhibit a drastic reduction in surface potential and sliding energy compared to unmodified substrates. These properties enable the epitaxial growth of high-quality single-crystal lead selenide (PbSe) on silicon, effectively circumventing conventional substrate-induced constraints. The photoelectric characterization shows that the detector made from the graphene/silicon-based PbSe structure achieves great mid-infrared performance. It has a room-temperature specific detectivity (D*) of up to 1.4 × 109 cm Hz1/2 W−1 and a rapid response time in the microsecond range. Our work offers a scalable pathway to overcome limitations of lattice-matched epitaxy and advance the development of silicon-compatible optoelectronics.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"133 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144164918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A TEM study of MOCVD-grown rutile GeO2 films mocvd生长金红石型GeO2薄膜的透射电镜研究

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-05-28 DOI: 10.1063/5.0244206

Imteaz Rahaman, Botong Li, Hunter D. Ellis, Brian Roy Van Devener, Randy C. Polson, Kai Fu

{"title":"A TEM study of MOCVD-grown rutile GeO2 films","authors":"Imteaz Rahaman, Botong Li, Hunter D. Ellis, Brian Roy Van Devener, Randy C. Polson, Kai Fu","doi":"10.1063/5.0244206","DOIUrl":"https://doi.org/10.1063/5.0244206","url":null,"abstract":"Ultrawide bandgap semiconductors are promising for the next-generation power electronics, largely attributed to their substantial bandgap and exceptional breakdown electric field. Rutile GeO2 (r-GeO2) emerges as a promising alternative, particularly because of its ambipolar dopability. However, research on r-GeO2 is still in its infancy, and further investigation into its structural properties is essential for enhancing epilayer quality. In our previous work, we identified distinct surface morphologies—square-patterned and smooth regions—of r-GeO2 films grown on r-TiO2 (001) substrates using metal-organic chemical vapor deposition. This research employs transmission electron microscopy to investigate the structural characteristics of the material. The findings indicate that the square-patterned regions are crystalline, whereas the smooth regions exhibit amorphous properties. The measured lattice spacing in the (110) plane is 0.324 nm, slightly exceeding the theoretical value of 0.312 nm. This discrepancy suggests the presence of tensile strain in the r-GeO2 film, resulting from lattice mismatch or thermal expansion differences with the substrate. We also observed a threading dislocation density of 1.83 × 109 cm−2, consisting of 11.76% screw-type, 29.41% edge-type, 55.89% mixed-type dislocations, and 2.94% planar defects. These findings offer valuable insight into the growth mechanisms and defect characteristics of r-GeO2.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"8 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144164916","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-speed tunable generation of random number distributions using actuated perpendicular magnetic tunnel junctions 利用驱动垂直磁隧道结高速可调产生随机数分布

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-05-28 DOI: 10.1063/5.0259366

Ahmed Sidi El Valli, Michael Tsao, J. Darby Smith, Shashank Misra, Andrew D. Kent

{"title":"High-speed tunable generation of random number distributions using actuated perpendicular magnetic tunnel junctions","authors":"Ahmed Sidi El Valli, Michael Tsao, J. Darby Smith, Shashank Misra, Andrew D. Kent","doi":"10.1063/5.0259366","DOIUrl":"https://doi.org/10.1063/5.0259366","url":null,"abstract":"Perpendicular magnetic tunnel junctions (pMTJs) actuated by nanosecond pulses are emerging as promising devices for true random number generation (TRNG) due to their intrinsic stochastic behavior and high throughput. In this work, we demonstrate the tunability and quality of random number distributions generated by pMTJs operating at a frequency of 104 MHz. First, changing the pulse amplitude is used to systematically vary the probability bias. The variance of the resulting bitstreams closely matches the expected binomial distribution, demonstrating consistency with an underlying sequence of Bernoulli trials. Second, the quality of uniform distributions of 8-bit random numbers generated with a probability bias of 0.5 is considered. A reduced chi-square analysis of these data shows that only two XOR operations are sufficient to achieve this distribution with p-values greater than 0.05. Finally, we show that there is a correlation between long-term probability bias variations and pMTJ resistance. These findings suggest that variations in the characteristics of the pMTJ underlie the observed variation of probability bias. Our results highlight the potential of stochastically actuated pMTJs for high-speed, tunable TRNG applications, showing the importance of the stability of pMTJ device characteristics in achieving reliable, long-term performance.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"57 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144164919","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

THz cyclotron resonance of a 2D hole gas in a GaN/AlN heterostructure GaN/AlN异质结构中二维空穴气体的太赫兹回旋共振

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-05-28 DOI: 10.1063/5.0273413

J. Wang, D. G. Rickel, C. F. C. Chang, Z. Zhang, P. Peng, Y. Huang, A. K. Azad, D. Jena, H. G. Xing, S. A. Crooker

引用次数: 0