Applied Physics Letters最新文献

High performance annealing-free thin-film transistors with 7-nm In0.72Ga0.28O/13-nm In0.46Ga0.54O homojunction channel 高性能无退火薄膜晶体管，7纳米In0.72Ga0.28O/13纳米In0.46Ga0.54O同质结通道

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-09-03 DOI: 10.1063/5.0278333

Kun Wang, Xue Chen, Zhiyu Zeng, Xi Su, Tao Guo, Zexin Tu, Jiaxian Wan, Liwei Ji, Hao Wu, Chang Liu

引用次数: 0

Unusual Fermi-level pinning and Ohmic contact engineering for Janus TMD heterojunctions from an electronegativity perspective 从电负性角度看Janus TMD异质结的异常费米能级钉钉和欧姆接触工程

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-09-03 DOI: 10.1063/5.0287304

Qian Liu, Zhen Zhu, Hai-Qing Xie, Zhi-Qiang Fan, Dan Wu, Ke-Qiu Chen

{"title":"Unusual Fermi-level pinning and Ohmic contact engineering for Janus TMD heterojunctions from an electronegativity perspective","authors":"Qian Liu, Zhen Zhu, Hai-Qing Xie, Zhi-Qiang Fan, Dan Wu, Ke-Qiu Chen","doi":"10.1063/5.0287304","DOIUrl":"https://doi.org/10.1063/5.0287304","url":null,"abstract":"Using density functional theory calculations, we systematically investigated the fat band structures and Schottky barriers of 72 van der Waals heterojunctions (vdWHs) formed by combining 1T-phase transition metal dichalcogenides (TMDs) (MX2, M = Mo, W; X = S, Se, Te) with 2H-phase Janus TMDs (MXY, M = Mo, W; X, Y = S, Se, Te). Unlike conventional TMDs, Janus TMDs lack mirror symmetry and exhibit a built-in in-plane dipole due to their asymmetric atomic configuration. A larger electronegativity gradient across the Janus TMDs leads to enhanced charge redistribution at the vdWH interface and a stronger in-plane dipole, resulting in unusual Fermi-level pinning (FLP). The calculated pinning factors for 1T-TMDs/MoSTe and 1T-TMDs/WSTe vdWHs are particularly low, reflecting a strong FLP effect. Despite the wide variation in work functions among the 1T-TMDs, their Fermi levels are consistently pinned near the band edges of MoSTe and WSTe, enabling quasi-Ohmic or Ohmic p-type and n-type contacts. Furthermore, the vdWHs exhibit low tunneling-specific resistivity, confirming their potential for ultra-low contact resistance applications in next-generation single-layer transistors.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"14 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144983419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Large room temperature anomalous Hall effect in c axis oriented non-collinear antiferromagnetic Mn3Ga thin films with ferrimagnetic Mn3Ga inclusion 含铁磁性Mn3Ga的c轴取向非共线反铁磁Mn3Ga薄膜的大室温反常霍尔效应

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-09-03 DOI: 10.1063/5.0281636

Wanchun Yu, Ni Xiong, Tao Wen, Huihong Wu, Zhenzhi Cheng, Fei Gao, Guangsheng Luo, Weiping Zhou

{"title":"Large room temperature anomalous Hall effect in c axis oriented non-collinear antiferromagnetic Mn3Ga thin films with ferrimagnetic Mn3Ga inclusion","authors":"Wanchun Yu, Ni Xiong, Tao Wen, Huihong Wu, Zhenzhi Cheng, Fei Gao, Guangsheng Luo, Weiping Zhou","doi":"10.1063/5.0281636","DOIUrl":"https://doi.org/10.1063/5.0281636","url":null,"abstract":"Non-collinear antiferromagnets Mn3X (X = Sn, Ge, Ga) have recently attracted a lot of attention due to their fascinating properties with great application prospects in spintronics. Mn3Ga possesses the highest Néel temperature among this family, providing huge potential for realistic spintronic device application. However, the small anomalous Hall conductivity of Mn3Ga makes it lack competitiveness. In this paper, c axis oriented Mn3Ga thin films with D019 hexagonal structure were prepared by optimizing the MgO(111) substrate temperature. Large anomalous Hall resistivity up to 1.53 μΩ cm at 300 K is observed for (0002) oriented Mn3Ga film grown at 450 °C, corresponding to a Hall conductivity of about 30 Ω−1 cm−1. Further analysis indicates that the skew-scattering mechanism, which is attributable to the presence of a small amount of the D022-Mn3Ga phase, is the main source for the large Hall conductivity observed here. These results raise the intriguing prospect of Mn3Ga films as a key component in antiferromagnetic spintronic devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"162 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144983347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Al3+-mediated aggregation-induced enhancement of photosensitization performance of gold nanoclusters Al3+介导的聚集诱导的金纳米团簇光敏性能增强

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-09-03 DOI: 10.1063/5.0284240

Yuchi Cheng, Menghui Jia, Zhongwei Yu

引用次数: 0

Multi-order optical differentiator integrated with an omnidirectionally selective subtracter 多阶光学微分器集成了一个全向选择性减色器

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-09-03 DOI: 10.1063/5.0292585

Li-Tong Su, Cheng Peng, Zheng-Hao Guo, Chun-Ting Xu, Wei Hu

{"title":"Multi-order optical differentiator integrated with an omnidirectionally selective subtracter","authors":"Li-Tong Su, Cheng Peng, Zheng-Hao Guo, Chun-Ting Xu, Wei Hu","doi":"10.1063/5.0292585","DOIUrl":"https://doi.org/10.1063/5.0292585","url":null,"abstract":"Optical computing offers high-speed, low-power data processing, while optical differentiation enables instant edge detection for applications like autonomous driving, object recognition, and bio-detection. Introducing an extra algorithm to optical differentiation will further extend its functionality. Here, we integrate an omnidirectional subtracter with a multi-order optical differentiator via combining distinct spiral lens phases with deflection phases. With this design, zeroth-, first-, and second-order differentiations are spatially separated, and the local linear polarization always orients toward the normal of optical edges for linearly polarized incidence. Thereby, selective edge subtractions can be carried out through simply rotating a polarizer. The design is verified in a photopatterned liquid crystal, whose electro-optical tunability enables a broadband operation across the entire visible spectrum. Rotating a polarizer confirms omnidirectional edge extraction in first- and second-order differentiations while preserving the zeroth-order bright field imaging. The direction-selective defect suppression enhances applications like rainy-day autonomous driving and object recognition in directional noise. This work advances optical differentiation, enabling high-performance edge-sensitive imaging.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"47 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144983374","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Thermal stress stabilized thick perovskite heterostructures for radiation detection 热应力稳定的厚钙钛矿异质结构用于辐射探测

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-09-03 DOI: 10.1063/5.0283310

Xini Zhang, Yiping Li, Yuanxiao Chen, Yanshuang Li, Hongxing Tian, Rongrong Cheacharoen, Jingjing Zhao, Yehao Deng

{"title":"Thermal stress stabilized thick perovskite heterostructures for radiation detection","authors":"Xini Zhang, Yiping Li, Yuanxiao Chen, Yanshuang Li, Hongxing Tian, Rongrong Cheacharoen, Jingjing Zhao, Yehao Deng","doi":"10.1063/5.0283310","DOIUrl":"https://doi.org/10.1063/5.0283310","url":null,"abstract":"Integrating lead halide perovskite onto the standard readout circuit substrate is the path to the commercialization of perovskite-based radiation detection and imaging. However, due to the large thermal expansion coefficient difference between perovskite and inorganic substrate, such heterostructure faces the challenge of thermal stress induced mechanical instability. This problem will be extremely severe for the thick perovskite film for radiation detection because the thermal strain energy accumulates with film thickness. Here, first by theoretical analysis, we quantized the thermal stress instability and found that a temperature variation of only 20 °C around room temperature will suffice to delaminate a 100 µm thick perovskite film from the substrate, which prediction agrees with experiments. We then proposed to promote the heterostructure's mechanical stability by increasing the perovskite nucleation rate on inorganic substrate to enhance the interface adhesive energy. Based on a sacrificial seeding layer, we realized stable interface between the thick perovskite film and the typical inorganic substrate, including indium tin oxide, silicon, and gallium nitride that can withstand at least 100 cycles of temperature variation between 25 and 150 °C and then fabricated high performance radiation detectors based on such heterostructures.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"1 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144983348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Controlled filament stability in SrTiO3 memristors via swift Xe ion irradiation 快速Xe离子辐照控制SrTiO3记忆电阻器的丝稳定性

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-09-03 DOI: 10.1063/5.0276146

Pengshun Shan, Jie Su, Yong Liu, Ruowei Wang, Minghui Xu, Weijin Kong, Jinhua Zhao, Tao Liu

{"title":"Controlled filament stability in SrTiO3 memristors via swift Xe ion irradiation","authors":"Pengshun Shan, Jie Su, Yong Liu, Ruowei Wang, Minghui Xu, Weijin Kong, Jinhua Zhao, Tao Liu","doi":"10.1063/5.0276146","DOIUrl":"https://doi.org/10.1063/5.0276146","url":null,"abstract":"Due to uncontrolled conductive filament (CF) formation and rupture during operation, CF randomness in SrTiO3-based memristors severely limits their stability and retention. To address this challenge, we employ swift heavy ion (SHI) irradiation—516 MeV Xe ions—on Pt/SrTiO3/Nb:SrTiO3 devices, introducing controlled ion track defects that guide filament formation. The irradiated memristors demonstrate remarkable performance improvements, achieving a lower SET voltage of 0.65 V (compared to 0.85 V for unirradiated devices), extended retention (&gt;106 s vs &lt;105 s), and superior stability (σ/μ = 0.06/0.06 vs 0.14/0.04). Moreover, these devices reliably emulate synaptic plasticity with minimal cycle-to-cycle variations (&lt;7.2%), enabling high-fidelity neuromorphic applications. When deployed in simulated neural networks for handwritten digit recognition, the irradiated memristors attain a recognition accuracy of 91.6%, showcasing their robustness in real-time computing tasks. These results highlight SHI irradiation as an effective strategy to engineer defect-guided pathways in oxide memristors, advancing their applicability in stable, high-performance neuromorphic systems.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"29 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144983367","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Alleviation of self-heating degradation in polycrystalline silicon thin-film transistors via voltage pulse modulation 通过电压脉冲调制减轻多晶硅薄膜晶体管的自热退化

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-09-03 DOI: 10.1063/5.0274914

Pengfei Liu, Meng Zhang, Lanrong Zou, Zhendong Jiang, Lei Lu, Man Wong, Hoi-Sing Kwok

引用次数: 0

Molecular beam epitaxy and electronic structures of rare-earth selenide EuSe thin films 稀土硒化EuSe薄膜的分子束外延及电子结构

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-09-03 DOI: 10.1063/5.0278149

Xiaodong Qiu, Zhujuan Li, Can Wang, Yuyang Mu, Yaling Zhou, Zhenjie Fan, Lin Huang, Fan Yu, Qichao Tian, Qinghao Meng, Bin Yang, Di Wu, Junwei Liu, Fang-Sen Li, Yi Zhang

{"title":"Molecular beam epitaxy and electronic structures of rare-earth selenide EuSe thin films","authors":"Xiaodong Qiu, Zhujuan Li, Can Wang, Yuyang Mu, Yaling Zhou, Zhenjie Fan, Lin Huang, Fan Yu, Qichao Tian, Qinghao Meng, Bin Yang, Di Wu, Junwei Liu, Fang-Sen Li, Yi Zhang","doi":"10.1063/5.0278149","DOIUrl":"https://doi.org/10.1063/5.0278149","url":null,"abstract":"The rare-earth Eu-based compound EuSe has attracted widespread attention due to its unique half-filled 4f orbital with large orbital momentum and strong correlation effects. Here, we realize the molecular beam epitaxial (MBE) growth of high-quality EuSe thin films on SrTiO3(001) and bilayer graphene (BLG) substrates. The EuSe grown on SrTiO3 substrate forms an out-of-plane (001) facet single-crystalline film, with the in-plane orientation EuSe〈110〉 direction paralleled to the SrTiO3〈100〉 direction. In contrast, the EuSe film grown on the BLG substrate has various in-plane rotational domains. The electronic band structures of the EuSe films are experimentally characterized by in situ angle-resolved photoemission spectroscopy, showing a semiconductive nature with the Eu 4f band as the top of the valence band. The bandgap size of EuSe grown on BLG is further determined as about 2.8 eV via low-temperature scanning tunneling spectroscopy. The MBE growth and the electronic structure characterizations of the EuSe thin films would promote further research and applications on the half-filled 4f electrons of rare-earth Eu-based compounds.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"31 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144983366","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Low-threshold lasing in cholesteric liquid crystals enabled by asymmetric defect layer positioning 通过不对称缺陷层定位实现胆甾液晶中的低阈值激光

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-09-03 DOI: 10.1063/5.0272422

Shuhao Xie, Shaohua Gao, Longchao Wang, Yang Li, Jie Dang, Xinzheng Zhang, Mingjiang Zhang

引用次数: 0