Applied Physics Letters最新文献

Lattice matching governs interfacial kinetics and conversion reversibility in FeF3 cathodes 晶格匹配控制着FeF3阴极的界面动力学和转化可逆性

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-12 DOI: 10.1063/5.0349049

Yujia Cheng,Wenzhi Zhang,Zihan Wang,Mingqian Zhang,Jia Yu,Guixin Cao

{"title":"Lattice matching governs interfacial kinetics and conversion reversibility in FeF3 cathodes","authors":"Yujia Cheng,Wenzhi Zhang,Zihan Wang,Mingqian Zhang,Jia Yu,Guixin Cao","doi":"10.1063/5.0349049","DOIUrl":"https://doi.org/10.1063/5.0349049","url":null,"abstract":"Iron trifluoride (FeF3) conversion-type cathodes generally suffer from bottlenecks including poor interfacial stability and sluggish Li+ transport. Most existing studies have overlooked the critical regulatory effect of the lattice matching relationship between the surface layer and the matrix on electrochemical behaviors. In this work, a lattice-compatible FeF2/FeF3 interface, together with lattice-mismatched CoF3/FeF3 and CuF2/FeF3 interfaces, was in situ constructed on FeF3 substrates. Systematic characterizations confirm that the highly lattice-compatible interface can optimize interfacial transport kinetics, promote the reversible conversion of LiF, and build a stable cathode electrolyte interphase. The modified sample achieves an initial discharge specific capacity of 610 mAh g−1 at 100 mA g−1, and its capacity retention after 100 cycles is 50.0% higher than that of the pristine FeF3. High lattice matching alleviates interfacial strain and reduces the Li+ migration energy barrier, thus improving the reversibility of the conversion reaction. This work proves that lattice-compatible interfacial engineering is one of the vital design guidelines for high-performance FeF3 conversion-type cathodes.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"63 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149208982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Evolution mechanism of damage locations in drift region of SiC MOSFETs under heavy ion irradiation 重离子辐照下SiC mosfet漂移区损伤位置的演化机制

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-12 DOI: 10.1063/5.0323691

Xiaoping Dong,Mingmin Huang,Yichu Qin,Yao Ma,Zhimei Yang,Yun Li,Min Gong

{"title":"Evolution mechanism of damage locations in drift region of SiC MOSFETs under heavy ion irradiation","authors":"Xiaoping Dong,Mingmin Huang,Yichu Qin,Yao Ma,Zhimei Yang,Yun Li,Min Gong","doi":"10.1063/5.0323691","DOIUrl":"https://doi.org/10.1063/5.0323691","url":null,"abstract":"This paper investigates the evolution mechanism of severe thermal damage locations in the drift region of the SiC MOSFETs under different applied drain voltages (VDS(irra)) during heavy ion irradiation using 587 MeV 36Kr ions. It is interesting to find from the post-irradiation blocking I–V curves that the drain–source leakage current increases significantly at about 500 V for the case under relatively low VDS(irra) (175–300 V) and increases rapidly at low voltage for the case under relatively high VDS(irra) (350 V). To explain this phenomenon, a local damage-related lifetime-model along the ion track is proposed and validated by technology computer-aided design simulations. The model indicates that thermal damage will develop near the p-base/n-drift junction once the damage near the n-drift/n-sub junction along the ion track becomes sufficiently serious with increasing VDS(irra). The proposed evolution mechanism of severe thermal damage locations can help analyze mechanisms of single-event leakage current and single-event burnout in SiC devices and guide radiation-hardening designs for SiC devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"33 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149208703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Terahertz reflectance probing of buried surface roughness in solid dielectrics 固体介质中埋藏表面粗糙度的太赫兹反射探测

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-12 DOI: 10.1063/5.0350359

Yang Liu,Jinghui Gao,Nuo Xu,Yi Zhang,Wei Yang,Li Yin,Guangyi Liu,George Chen,Muneeb Ahmed,Lisheng Zhong

{"title":"Terahertz reflectance probing of buried surface roughness in solid dielectrics","authors":"Yang Liu,Jinghui Gao,Nuo Xu,Yi Zhang,Wei Yang,Li Yin,Guangyi Liu,George Chen,Muneeb Ahmed,Lisheng Zhong","doi":"10.1063/5.0350359","DOIUrl":"https://doi.org/10.1063/5.0350359","url":null,"abstract":"Surface roughness plays a critical role in interfacial breakdown and surface flashover of solid dielectrics used in high-voltage power equipment. However, conventional profilometric techniques are limited to surface-accessible regions and cannot characterize buried surface morphologies within dielectric materials. Here, we report a terahertz (THz) time-domain spectroscopy approach that exploits the interaction between THz waves and rough surfaces to quantify surface roughness. A reflection model based on the scattering loss factor (ρS) is established, indicating that micro-scale surface roughness can induce significant scattering effects on THz wave reflection, thereby supporting the feasibility of THz-based roughness characterization in solid dielectrics. Experimental results show that the THz reflectance (R) decreases nonlinearly with increasing root mean square height (Rq), exhibiting a concave trend within the range of 0.3–9 μm. The relationship between R and Rq can be empirically described using a cubic fitting function with high agreement (sum of squared error &lt; 0.1). Furthermore, an effective reconstruction of buried surface roughness is achieved using a frequency-domain filtering-based approach. The reconstructed roughness values show good agreement with profilometer measurements, with deviations within 0.2 μm. This work provides a non-destructive and quantitative approach for evaluating both accessible and buried surface roughness in solid insulation, offering a potential pathway for interface characterization in dielectrics.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"11 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149208984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Phonon transport in layered NaMnO2: Roles of interlayer electrostatic coupling and Jahn–Teller distortions 层状NaMnO2中的声子输运：层间静电耦合和Jahn-Teller畸变的作用

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-12 DOI: 10.1063/5.0339190

Rongkun Chen,Jiayi Cao,Pengyu Qian,Weina Ren,Shiqian Hu

{"title":"Phonon transport in layered NaMnO2: Roles of interlayer electrostatic coupling and Jahn–Teller distortions","authors":"Rongkun Chen,Jiayi Cao,Pengyu Qian,Weina Ren,Shiqian Hu","doi":"10.1063/5.0339190","DOIUrl":"https://doi.org/10.1063/5.0339190","url":null,"abstract":"Sodium-ion batteries offer a sustainable alternative to lithium-based systems, but their safety and performance can be affected by inadequate thermal management during high-rate operation. Here, we present a first-principles investigation of lattice thermal transport in representative layered NaxMnO2 structural models, including the fully desodiated δ-MnO2 limit (x=0), an intermediate-composition O3′-Na0.5MnO2 model (x=0.5), and fully sodiated O3′-NaMnO2 and P2′-NaMnO2 polymorphs (x=1). Using the Boltzmann transport equation combined with the Wigner transport formalism, we reveal pronounced variations in both the magnitude and anisotropy of lattice thermal conductivity among these structural models. Relative to desodiated δ-MnO2, Na+ insertion redistributes charge and strengthens electrostatic interactions between the inserted Na+ layer and adjacent oxygen layers, thereby enhancing out-of-plane phonon transport. Meanwhile, the Mn3+-associated Jahn–Teller distortion softens selected in-plane Mn–O linkages and suppresses the corresponding in-plane thermal transport. These structural changes modify phonon dispersions, group velocities, and mean free paths, resulting in a substantial reduction in thermal conductivity anisotropy in the sodiated models. Our results clarify how Na content, interlayer interactions, and Jahn–Teller distortions jointly regulate anisotropic phonon transport in layered manganese oxides, providing insight relevant to thermal management in sodium-ion battery cathodes.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"10 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149208973","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Cr2O3/β-Ga2O3 heterojunction diodes with orientation-dependent breakdown electric field 具有定向击穿电场的Cr2O3/β-Ga2O3异质结二极管

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-12 DOI: 10.1063/5.0348039

Yizheng Liu,Haochen Wang,Carl Peterson,James S. Speck,Chris G. Van de Walle,Sriram Krishnamoorthy

{"title":"Cr2O3/β-Ga2O3 heterojunction diodes with orientation-dependent breakdown electric field","authors":"Yizheng Liu,Haochen Wang,Carl Peterson,James S. Speck,Chris G. Van de Walle,Sriram Krishnamoorthy","doi":"10.1063/5.0348039","DOIUrl":"https://doi.org/10.1063/5.0348039","url":null,"abstract":"We report the fabrication of Cr2O3/β-Ga2O3 heterojunction diodes (HJDs) using reactive magnetron sputtering of Cr2O3 on highly doped β-Ga2O3 bulk substrates along (100), (010), (001), (110), and (011) orientation dependence of high electric field handling capability in β-Ga2O3. Additional relative permittivity values in (110) and (011) orientations of β-Ga2O3 were computed by using first-principles calculation methods for accurate apparent charge density (ND–NA) extraction and breakdown electric field analysis from capacitance–voltage measurements. The HJDs fabricated on n+ (110) exhibited breakdown electric fields &gt;10 MV/cm up to 12.9 MV/cm, showing the highest experimentally observed parallel-plane junction electric field among β-Ga2O3-based junctions. Breakdown electric fields among (100), (010), (001), and (011) orientations showed distinct distribution in the range of 5.13–5.26, 5.10–7.05, 2.70–3.33, and 3.88–4.38 MV/cm, respectively, validating the orientational dependence of parallel-plane junction electric field at breakdown in low-symmetry monoclinic β-Ga2O3. The parallel-plane breakdown electric fields (EBr,ǁ) reported in this work were extracted when the device experienced breakdown at 100 mA/cm2 current density compliance, and should not be confused with critical electric field (Ec) as a function of drift layer doping concentration, which accounts for electric-field dependent impact ionization coefficients in Si, SiC, and GaN. This study can guide the choice of crystal orientation for high-performance gallium oxide-based devices that require high electric field handling capability.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"27 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149208706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Stress-controlled transfer of high-mobility organic semiconductor nanosheets for thin-film transistors 薄膜晶体管用高迁移率有机半导体纳米片的应力控制转移

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-12 DOI: 10.1063/5.0333299

Veronika Reisner,Sirri Batuhan Kalkan,Bert Nickel

{"title":"Stress-controlled transfer of high-mobility organic semiconductor nanosheets for thin-film transistors","authors":"Veronika Reisner,Sirri Batuhan Kalkan,Bert Nickel","doi":"10.1063/5.0333299","DOIUrl":"https://doi.org/10.1063/5.0333299","url":null,"abstract":"Organic thin-film transistors (TFTs) are key components for large-area and mechanically flexible electronic devices, and reliable fabrication methods beyond direct physical vapor deposition (PVD) are required, particularly for technical and non-planar surfaces. We fabricated organic TFTs by transferring organic small-molecule nanosheets. During the release and transfer process, the nanosheets experience significant mechanical stress, leading to plastic deformation or phase changes that can be quantified by X-ray diffraction (XRD). In accordance with classical bending theory, the mechanical stress can be significantly reduced by limiting the nanosheet thickness to 30 nm or less. Using this optimized thickness, we directly compare transferred nanosheets with thin films prepared by PVD on self-assembled monolayer (SAM)-functionalized bottom contacts. TFTs fabricated with transferred dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) nanosheets exhibit a mobility of 0.32 cm2/V s and a subthreshold swing of 114 mV/dec, approaching state-of-the-art TFTs fabricated by direct PVD, which exhibit here a mobility of 0.42 cm2/V s. XRD indicates that transferred DNTT nanosheets exhibit superior crystalline order on the contacts compared to films grown by direct PVD. However, the PVD growth on the gate dielectric, i.e., on SAM-passivated Al2O3, is slightly better than on the sacrificial polymer layer. These results indicate that the transport properties of the transferred nanosheets are not primarily limited by the transfer process itself, but rather by the thin-film growth on the sacrificial water-soluble polymer layer. Transferable nanosheets have applications in hybrid devices and devices with unconventional geometries, e.g., non-planar transistors or devices containing free-standing thin films, where direct evaporation is challenging or not feasible.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"1 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149209034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dual-phase high-entropy zirconate (La0.25Sm0.25Er0.25Ho0.25)2Zr2O7 with enhanced sintering resistance for thermal barrier coatings 具有抗烧结性能的双相高熵锆酸盐（La0.25Sm0.25Er0.25Ho0.25）2Zr2O7用于热障涂层

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-12 DOI: 10.1063/5.0343687

Shuo Huang,Ziang Luo,Shijia Li,Liye Ding,Chuanhui Zhang,Levente Vitos,Hongyun Jin

{"title":"Dual-phase high-entropy zirconate (La0.25Sm0.25Er0.25Ho0.25)2Zr2O7 with enhanced sintering resistance for thermal barrier coatings","authors":"Shuo Huang,Ziang Luo,Shijia Li,Liye Ding,Chuanhui Zhang,Levente Vitos,Hongyun Jin","doi":"10.1063/5.0343687","DOIUrl":"https://doi.org/10.1063/5.0343687","url":null,"abstract":"High anti-sintering is critical for thermal barrier coatings operating under prolonged thermal exposure. Here, we report a dual-phase high-entropy zirconate, (La0.25Sm0.25Er0.25Ho0.25)2Zr2O7, with its average grain size increasing only from 1.17 to 2.83 μm after heat treatment at 1600 °C for 10–100 h, demonstrating outstanding high-temperature anti-sintering capability. Ab initio calculations reveal that decreasing rare-earth ionic radius increases the surface energy for both pyrochlore and defect fluorite phases, with the (110) facet identified as the most stable. The bond-length and charge density analyses further uncover a pronounced disparity in lattice distortion between the coexisting phases, with markedly broader metal–oxygen bond distributions in the defect fluorite structure than in the pyrochlore counterpart. This strong structural heterogeneity, together with abundant pyrochlore and defect fluorite interfaces, suppresses grain coarsening and highlights dual-phase high-entropy design as an effective strategy for tuning the sintering behavior of materials.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"27 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149210353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Energy dissipation in silicon MEMS resonators with varying thicknesses of aluminum layers 不同铝层厚度的硅MEMS谐振器的能量耗散

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-12 DOI: 10.1063/5.0345586

Saurabh Thorat,Andre Gesing,Sina Zare Pakzad,Ulrich Schmid,Michael Schneider

{"title":"Energy dissipation in silicon MEMS resonators with varying thicknesses of aluminum layers","authors":"Saurabh Thorat,Andre Gesing,Sina Zare Pakzad,Ulrich Schmid,Michael Schneider","doi":"10.1063/5.0345586","DOIUrl":"https://doi.org/10.1063/5.0345586","url":null,"abstract":"The influence of thin aluminum layers on the dissipation mechanisms of silicon microresonators is systematically studied in relation to metal-layer thickness. Quality factor measurements are performed at the wafer level using an automated setup, with each thickness variation tested on approximately 100 resonators to ensure statistical robustness and high throughput. The results show that additional dissipation from the aluminum layers can be effectively described with an isotropic loss factor. A clear correlation exists between the quality factor and metal thickness: negligible impact for ultra-thin (10 nm), discontinuous layers, but a significant decrease for continuous layers that intensifies with increasing thickness (up to 636 nm). Using a numerical model, we find that the dissipation associated with the metal layer is characterized by a mean isotropic loss parameter η=6.53 Pa/kPa constant over a broad range of thicknesses. These results provide a quantitative understanding of the thickness-dependent damping in aluminum-coated silicon microelectromechanical systems resonators and highlight the importance of considering metal-layer losses in high-Q devices used for sensing, timing, and related applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"11 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149210371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-mobility enhancement-mode thin-film transistors with 1.5 nm-thick ALD-grown Sn-doped In2O3 channels 具有1.5 nm厚ald生长的掺锡In2O3通道的高迁移率增强模式薄膜晶体管

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-12 DOI: 10.1063/5.0352264

Seung Ho Ryu,Seungsu Kim,Taikyu Kim,Seong Keun Kim

{"title":"High-mobility enhancement-mode thin-film transistors with 1.5 nm-thick ALD-grown Sn-doped In2O3 channels","authors":"Seung Ho Ryu,Seungsu Kim,Taikyu Kim,Seong Keun Kim","doi":"10.1063/5.0352264","DOIUrl":"https://doi.org/10.1063/5.0352264","url":null,"abstract":"Aggressive channel thickness scaling to the sub-2 nm regime is essential for strengthening electrostatic gate control in monolithic three-dimensional electronics, but it causes severe carrier depletion and transport degradation in In2O3 thin-film transistors (TFTs). Here, we demonstrate enhancement-mode TFTs with 1.5 nm-thick Sn-doped In2O3 (ITO) channels prepared by inhibitor-assisted atomic layer deposition. At the same physical channel thickness, the ITO TFT exhibits a field-effect mobility of 25.7 ± 1.4 cm2V−1s−1, a subthreshold swing of 129 ± 31 mV/dec, and a threshold voltage of 0.2 ± 0.2 V, whereas the undoped In2O3 TFT undergoes severe transport degradation. The ITO TFT also shows markedly improved positive-bias-stress stability, with a threshold voltage shift of 0.37 V after 3600 s, whereas the thickness-matched In2O3 TFT reaches 2.07 V within 1000 s and fails before 3600 s. Analysis of the effective mobility and sheet carrier density indicates that Sn doping mitigates carrier depletion in the sub-2 nm channel. The resulting carrier replenishment improves on-state transport and strengthens electrostatic screening against positive-bias-induced trap charging, thereby improving the mobility–positive-bias-stress stability balance. These results establish controlled Sn doping as an effective strategy for realizing high-mobility ultrathin In2O3 TFTs with positive-bias-stress stability for monolithic three-dimensional electronics.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"33 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149208985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Characterization of localized circularly polarized THz electric fields using MAPbI3 thin films 用MAPbI3薄膜表征局域圆极化太赫兹电场

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-12 DOI: 10.1063/5.0351260

Hiroshi Watanabe,Zhenya Zhang,Ai Shimazaki,Tomoya Nakamura,Atsushi Wakamiya,Hideki Hirori

{"title":"Characterization of localized circularly polarized THz electric fields using MAPbI3 thin films","authors":"Hiroshi Watanabe,Zhenya Zhang,Ai Shimazaki,Tomoya Nakamura,Atsushi Wakamiya,Hideki Hirori","doi":"10.1063/5.0351260","DOIUrl":"https://doi.org/10.1063/5.0351260","url":null,"abstract":"Circularly polarized (CP) terahertz (THz) fields are promising for controlling angular momentum in solids. While resonator structures can be used to enhance THz electric fields, a highly localized enhancement makes it difficult to accurately characterize the amplitude and polarization of the local near-field maximum using thick electro-optic crystals. We demonstrate a local probing method based on a band edge modulation in methylammonium lead iodide (MAPbI3) perovskite thin films. The THz-induced transmittance change, ΔT, in the near-infrared (as well as the reflectance change, ΔR) can be used to determine the near-field amplitude, while the degree of the modulation of ΔT (or ΔR) due to the oscillating THz electric-field vector yields the ellipticity ε. The extracted ellipticity is close to the ideal value (within ±0.05) for ε &gt; 0.4. A comparison with finite-difference time-domain simulations shows that this method can be used to characterize the amplitude and ellipticity of the enhanced CP field in the gap of a crosshair resonator with good accuracy. The simulations also reproduce the experimentally observed long-lived near-field waveform well and indicate that the observed difference between the theoretical and experimental ε mainly arises from a probe spot that is slightly displaced from the gap center by about 1 μm. Since this resonator structure has an enhancement factor of 11.8 ± 0.3 and a high preservation of circularity, the combination of this resonator with the proposed probing method should be useful for studies using strong THz fields.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"6 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149208976","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0