Applied Physics Letters最新文献

Near room-temperature large negative electrocaloric effect accompanied by giant thermal switching ratio in Zr-rich lead zirconate titanate 富含锆酸铅的钛酸铅中的近室温大负电致发光效应与巨大的热转换率

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-09-06 DOI: 10.1063/5.0228865

Jian Guo, Haoran Yu, Mingqian Yuan, Xue-Jun Yan, Shan-Tao Zhang

引用次数: 0

Two-dimensional ferroelectric semiconductor floating-gate transistor with light-tunable field effect for memory and photo-synapse 具有光可调场效应的二维铁电半导体浮动栅晶体管，用于存储器和光电开关

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-09-06 DOI: 10.1063/5.0197542

Yurong Jiang, Rui Wang, Yuting Peng, Hongzhi Li, Xueping Li, Yiduo Shao, Xiaobing Yan, Liangzhi Kou, Congxin Xia

{"title":"Two-dimensional ferroelectric semiconductor floating-gate transistor with light-tunable field effect for memory and photo-synapse","authors":"Yurong Jiang, Rui Wang, Yuting Peng, Hongzhi Li, Xueping Li, Yiduo Shao, Xiaobing Yan, Liangzhi Kou, Congxin Xia","doi":"10.1063/5.0197542","DOIUrl":"https://doi.org/10.1063/5.0197542","url":null,"abstract":"Ferroelectric field effect transistors (Fe-FETs) offer promising candidates for neuromorphic computing. However, it is still challenging to achieve a light-tunable field effect, which limits the function of photo-synapse. In this work, a ferroelectric semiconductor floating-gate transistor (FSF-FET) is proposed based on MoS2/h-BN/α-In2Se3 van der Waals heterojunctions (vdWHs), in which the two-dimensional ferroelectric semiconducting α-In2Se3 and dielectric h-BN serve as the trapped layer of charges and prevent layer, respectively. The excellent memory performances are exhibited, including a high programming/erasing ratio of over 107, a large memory window ratio of 74.69%, and good non-volatility. Moreover, the FSF-FETs also possess the light-tunable synapse behaviors, including the high paired-pulse facilitation of 236% and an obvious transition from short-term plasticity to long-term plasticity. The high recognition rate of 93.9% is achieved with dual-mode modulation of light and electrical pulses. The ferroelectric semiconductor floating-gate design opens up a strategy to realize the light-tunable field effect of Fe-FETs for photo-synapse.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":4.0,"publicationDate":"2024-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142144429","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Structural and electrical properties of grafted Si/GaAsSb heterojunction 接枝硅/砷化镓锑异质结的结构和电气特性

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-09-06 DOI: 10.1063/5.0225069

Haris Naeem Abbasi, Seunghyun Lee, Hyemin Jung, Nathan Gajowski, Yi Lu, Yifan Wang, Donghyeok Kim, Jie Zhou, Jiarui Gong, Chris Chae, Jinwoo Hwang, Manisha Muduli, Subramanya Nookala, Zhenqiang Ma, Sanjay Krishna

{"title":"Structural and electrical properties of grafted Si/GaAsSb heterojunction","authors":"Haris Naeem Abbasi, Seunghyun Lee, Hyemin Jung, Nathan Gajowski, Yi Lu, Yifan Wang, Donghyeok Kim, Jie Zhou, Jiarui Gong, Chris Chae, Jinwoo Hwang, Manisha Muduli, Subramanya Nookala, Zhenqiang Ma, Sanjay Krishna","doi":"10.1063/5.0225069","DOIUrl":"https://doi.org/10.1063/5.0225069","url":null,"abstract":"The short-wave infrared (SWIR) wavelength, especially 1.55 μm, has attracted significant attention in various areas such as high-speed optical communication and LiDAR systems. Avalanche photodiodes (APDs) are a critical component as a receiver in these systems due to their internal gain, which enhances the system performance. Silicon-based APDs are promising since they are CMOS compatible, but they are limited in detecting 1.55 μm light detection. This study proposes a p-type Si on n-type GaAs0.51Sb0.49 (GaAsSb) lattice matched to InP substrates heterojunction formed using a grafting technique for future GaAsSb/Si APD technology. A p+Si nanomembrane is transferred onto the GaAsSb/AlInAs/InP substrate, with an ultrathin ALD-Al2O3 oxide at the interface, which behaves as both double-side passivation and quantum tunneling layers. The devices exhibit excellent surface morphology and interface quality, confirmed by atomic force microscope and transmission electron microscope. Also, the current–voltage (I–V) of the p+Si/n−GaAsSb heterojunction shows the rectifying characteristics with an ideality factor of 1.8. The I–V tests across multiple devices confirm high consistency and yield. Furthermore, the x-ray photoelectron spectroscopy measurement reveals that GaAsSb and Si are found to have type-II band alignment with a conduction band offset of 50 meV, which is favorable for the high-bandwidth APD application. The demonstration of the GaAsSb/Si heterojunction highlights the potential to advance current SWIR PD technologies.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":4.0,"publicationDate":"2024-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142144427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhanced all-optical vector atomic magnetometer enabled by artificial neural network 人工神经网络支持的增强型全光学矢量原子磁强计

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-09-06 DOI: 10.1063/5.0218065

Jianan Qin, Jinxin Xu, Zhiyuan Jiang, Jifeng Qu

引用次数: 0

Thermally driven resistive switching in a charge density wave compound 电荷密度波化合物中的热驱动电阻开关

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-09-05 DOI: 10.1063/5.0218725

Malathi Nagaraja, Ullattuparambil Anagha, Saswat Subhankar, Rajeev N. Kini

{"title":"Thermally driven resistive switching in a charge density wave compound","authors":"Malathi Nagaraja, Ullattuparambil Anagha, Saswat Subhankar, Rajeev N. Kini","doi":"10.1063/5.0218725","DOIUrl":"https://doi.org/10.1063/5.0218725","url":null,"abstract":"This study delves into the nonlinear transport phenomena exhibited by the telephone number compound Sr14Cu24O41 (SCO), shedding light on the underlying mechanisms driving resistive switching behavior. Through a comprehensive investigation utilizing various measurement techniques, including continuous and pulsed I–V sweeps, terahertz time-domain spectroscopy, and numerical simulations, we unravel the intricate interplay between charge density wave (CDW) dynamics and Joule heating. Our findings reveal that while CDW-related effects contribute to the nonlinear conductivity observed in SCO at moderate electric fields, Joule heating emerges as the primary driving force behind the observed negative differential resistance and hysteresis at high electric fields/current densities. This conclusion is corroborated by the disappearance of nonlinear behavior under pulsed excitation, as well as the agreement between the numerical simulations and the experimental observations. Simulations underscore the pivotal role of Joule heating in inducing resistive switching. These insights deepen our understanding of the complex interplay between CDW physics and thermal effects in correlated electron systems, offering avenues for the design and optimization of functional electronic devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":4.0,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142142818","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Unification of the breakdown criterion for thermal field emission-driven microdischarges 统一热场发射驱动微放电的击穿标准

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-09-05 DOI: 10.1063/5.0227666

Chubin Lin, Jiandong Chen, Huihui Wang, Yangyang Fu

{"title":"Unification of the breakdown criterion for thermal field emission-driven microdischarges","authors":"Chubin Lin, Jiandong Chen, Huihui Wang, Yangyang Fu","doi":"10.1063/5.0227666","DOIUrl":"https://doi.org/10.1063/5.0227666","url":null,"abstract":"Determining the characteristics of thermal field emission-induced breakdown is essential for various electron emission devices, such as thermionic energy converters. In previous studies, several mathematical models were developed to determine the breakdown voltages driven by field emission under different conditions; however, complicated computations were required to solve the numerical equations. There is still no consensus on the breakdown criterion when the thermal field emission comes into play. In this work, a unified breakdown criterion for the thermal field emission-induced microdischarge is proposed based on the definition of the thermal field emission coefficient γTFE (combined with the thermionic emission coefficient γTE and field emission coefficient γFE) from the emission current. The breakdown voltages scaling with the cathode temperature and gap distance are quantified. Distinct regimes corresponding to different electron emissions and their transitions are examined with the cathode temperature and gap distance tuned across a range of values. The results from this study provide an evaluation of thermal field emission-induced breakdowns and the dominant electron emission mechanisms in distinct regimes can be straightforwardly determined from the present model.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":4.0,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142142840","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Limits of high-frequency polarization switching in BaTiO3 BaTiO3 中高频偏振开关的极限

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-09-05 DOI: 10.1063/5.0218240

Hasin Tamim, Rajan Khadka, Pawel Keblinski

{"title":"Limits of high-frequency polarization switching in BaTiO3","authors":"Hasin Tamim, Rajan Khadka, Pawel Keblinski","doi":"10.1063/5.0218240","DOIUrl":"https://doi.org/10.1063/5.0218240","url":null,"abstract":"In this work, we use molecular dynamics simulations to investigate the switching behavior of BaTiO3 ferroelectric under the application of a high-amplitude high-frequency oscillatory electric field. While at lower frequencies, we observe a standard square-shaped hysteresis loop behavior, at frequencies approaching 1 THz, the hysteresis loop has an ellipsoidal shape. As the frequency increases, the average polarization oscillates without switching direction. To elucidate the origin of the ∼1 THz limit for the polarization switching, we analyzed unit-cell-level polarization vector maps. In this context, the analysis of the low-frequency switching events revealed that in addition to the majority of the polarization vectors exhibiting rapid switching, some “metastable” aligned polarization vectors persist longer with an average lifetime of ∼1 ps. As the frequency increases to the THz range, several polarization vector lines remain unswitched, thus preventing the polarization switching at the simulation domain level. Furthermore, we observe that with the increase in the amplitude of the applied electric field, one can increase the frequency at which switching is observed.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":4.0,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142142835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Quantum sparse coding and decoding based on quantum network 基于量子网络的量子稀疏编码和解码

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-09-05 DOI: 10.1063/5.0226021

Xun Ji, Qin Liu, Shan Huang, Andi Chen, Shengjun Wu

{"title":"Quantum sparse coding and decoding based on quantum network","authors":"Xun Ji, Qin Liu, Shan Huang, Andi Chen, Shengjun Wu","doi":"10.1063/5.0226021","DOIUrl":"https://doi.org/10.1063/5.0226021","url":null,"abstract":"Sparse coding provides a versatile framework for efficiently capturing and representing crucial data (information) concisely, which plays an essential role in various computer science fields, including data compression, feature extraction, and general signal processing. Here, we propose symmetric quantum neural networks for realizing sparse coding and decoding algorithms. Our networks consist of multi-layer, two-level unitary transformations that are naturally suited for optical circuits. Specifically, the two networks we propose can be efficiently trained together or separately via a quantum natural gradient descent algorithm. Utilizing the trained model, we achieve coding and decoding of sparse data including sparse classical data of binary and grayscale images, as well as sparse quantum data that are quantum states in a certain smaller subspace. The results demonstrate an accuracy of 98.77% for image reconstruction and a fidelity of 97.68% for quantum state revivification. Our quantum sparse coding and decoding model offers improved generalization and robustness compared to the classical model, giving insights to further research on quantum advantages in artificial neural networks.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":4.0,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142142806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Achievement and mechanism of large-scale color tunable OLEDs based on interfacial charge transfer complexes with dual donors 基于双供体界面电荷转移复合物的大规模可调色有机发光二极管的实现及其机理

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-09-05 DOI: 10.1063/5.0226298

Zhongtao Shen, Zhaoyue Lü, Zhehao Chen, Junling Wang, Haichuan Mu

{"title":"Achievement and mechanism of large-scale color tunable OLEDs based on interfacial charge transfer complexes with dual donors","authors":"Zhongtao Shen, Zhaoyue Lü, Zhehao Chen, Junling Wang, Haichuan Mu","doi":"10.1063/5.0226298","DOIUrl":"https://doi.org/10.1063/5.0226298","url":null,"abstract":"Color tunable organic light-emitting diodes have intrigued many application fields, such as smart lighting and information encryption. In this study, we propose a simple structure based on interfacial charge transfer complexes (CTCs) with double donors and single acceptors for achieving color tunability. Through embedding a second donor between the primary donor and the acceptor, the emission of devices can be well-tuned by simply controlling the applied voltage. The calculated frontier molecular orbitals of constituted monomers and heterodimers via density function theory confirm the formation of CTCs between the donors and acceptor. Importantly, the highest occupied molecular orbital level and charge carrier mobility of the second donor are crucial to realize widely adjustable spectra with the voltage. With this strategy, the device incorporating 1,3-di(9H-carbazol-9-yl)benzene as the second donor and 4,4′,4″-tris[(3-methylphenyl)phenylamino] triphenylamine as the primary donor exhibits the largest color shift. The CIE coordinates span from (0.52, 0.46) at 4 V to (0.29, 0.26) at 10 V. These findings shed light on the fact that the double-donor-strategy is feasible for fulfilling large-scale color tunability of CTC-based organic light-emitting diodes and is beneficial to simplify the fabrication process.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":4.0,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142142833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optical inference using nonlinear optical diffraction 利用非线性光学衍射进行光学推理

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-09-05 DOI: 10.1063/5.0212880

Oded Katz, Gilad Robert Barir, Barak Hadad, Daniel Marima, Alon Bahabad

引用次数: 0