Effects of high-temperature annealing on electrical properties of Si-doped β -Ga2O3 thin films grown by low-pressure hot-wall MOCVD

IF 3.6 2区物理与天体物理 Q2 PHYSICS, APPLIED

Applied Physics Letters Pub Date : 2025-10-07 DOI:10.1063/5.0292471

Jun J. Morihara, Mao Bando, Junya Yoshinaga, Yoshinao Kumagai, Masataka Higashiwaki

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引用次数: 0

Abstract

Electrical properties of Si-doped Ga2O3 (010) homoepitaxial thin films grown by low-pressure hot-wall metalorganic chemical vapor deposition (MOCVD) and the effects of high-temperature post-deposition annealing (PDA) on them were studied through device characteristics of Schottky barrier diodes (SBDs) fabricated on the epitaxial substrates. All the SBDs showed ideal n-type Schottky characteristics with excellent in-plane uniformity at room temperature. Temperature-dependent forward current density–voltage (J–V–T) characteristics showed nearly constant ideality factors of 1.02 ± 0.01 from room temperature to 200 °C. The reverse breakdown V of the SBDs with PDA was about 100 V larger than those of the ones without PDA. Furthermore, reverse J–V–T characteristics of the PDA SBDs were well reproduced by the thermionic field emission model for the whole temperature range up to 200 °C. These results indicate that the high-temperature PDA treatment is a useful and effective technique to further improve electrical properties of the MOCVD-grown Ga2O3 epitaxial films.

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高温退火对低压热壁MOCVD生长si掺杂β -Ga2O3薄膜电学性能的影响

通过在外延衬底上制备肖特基势垒二极管（sbd）的器件特性，研究了低压热壁金属有机化学气相沉积（MOCVD）制备的掺硅Ga2O3（010）同外延薄膜的电学性能以及高温沉积后退火（PDA）对薄膜电学性能的影响。所有sdd均表现出理想的n型肖特基特性，在室温下具有良好的面内均匀性。在室温至200℃范围内，电流密度-电压（J-V-T）随温度变化的理想因子为1.02±0.01。带PDA的sdd的反向击穿V比不带PDA的sdd大约100 V。此外，在高达200°C的整个温度范围内，热离子场发射模型很好地再现了PDA sdd的反向J-V-T特性。这些结果表明，高温PDA处理是进一步提高mocvd生长的Ga2O3外延膜电性能的有效方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.