Caijia Sun, Yiyu Sun, Haoshen Ye, Yijie Zhu, Leiming Chen, Huichao Li, G. P. Zhang, Jianli Wang
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引用次数: 0
Abstract
Intrinsic ferromagnetism, with coexisting ferroelectric and ferrovalley polarizations in a single two-dimensional semiconductor, is highly desirable for developing next-generation multifunctional nanospintronic devices. Based on first-principles calculations and Monte Carlo simulations, the two-dimensional V2N2O monolayer is predicted to be an indirect bandgap ferromagnetic semiconductor, characterized by a near-room-temperature Curie temperature and an out-of-plane easily magnetized axis. Interestingly, the spontaneous valley polarization can be effectively modulated by the ferroelectric polarization. Remarkably, the anomalous valley Hall effect in the V2N2O monolayer can be controlled by reversing the magnetization. Thus, the V2N2O monolayer is considered a potential candidate for polymorphic memory and multifunctional valley electronic devices.
期刊介绍:
Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology.
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