Applied Physics Letters最新文献_第10页

Low-temperature microwave annealing stabilizes the morphotropic phase boundary in HfO2/ZrO2 superlattice heterostructures 低温微波退火稳定了HfO2/ZrO2超晶格异质结构的致形相界

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-06-09 DOI: 10.1063/5.0264349

Chen-You Wei, Yu-Hong Chen, Tzu-I Kao, Cheng-En Wu, Chao-Wei Wu, Heng-Jia Chang, Yi-Ju Yao, Fu-Ju Hou, Guang-Li Luo, Yung-Chun Wu

引用次数: 0

Field-dependent anisotropic microwave responses in van der Waals ferromagnet Fe4GeTe2 范德华铁磁体Fe4GeTe2的场相关各向异性微波响应

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-06-09 DOI: 10.1063/5.0268615

Wei Liu, Yuanxi Liang, Yang Yang, Jingjing Ma, Aina Wang, Azizur Rahman, Jingxin Li, Min Ge, Jiyu Fan, Chunlan Ma, Li Pi, Dongsheng Song, Haifeng Du, Zhe Qu, Lei Zhang

{"title":"Field-dependent anisotropic microwave responses in van der Waals ferromagnet Fe4GeTe2","authors":"Wei Liu, Yuanxi Liang, Yang Yang, Jingjing Ma, Aina Wang, Azizur Rahman, Jingxin Li, Min Ge, Jiyu Fan, Chunlan Ma, Li Pi, Dongsheng Song, Haifeng Du, Zhe Qu, Lei Zhang","doi":"10.1063/5.0268615","DOIUrl":"https://doi.org/10.1063/5.0268615","url":null,"abstract":"The exploration of two-dimensional van der Waals (2D-vdW) ferromagnets with high Curie temperature (TC) is crucial for the development of high-performance, non-volatile, and low-power spintronic devices. 2D-vdW Fe4GeTe2 (F4GT) is considered a promising candidate material due to its nearly room-temperature TC, strong magnetization, high conductivity, and variable magnetic anisotropy. In this study, we investigate the multiple magnetic couplings in F4GT single crystals using electron spin resonance (ESR) technique. ESR lines associated with the change from perpendicular magnetic anisotropy to easy plane anisotropy are observed, indicating strong anisotropic responses to the microwaves. As the temperature increases, the resonance lines for H∥ab shift toward higher fields, while those for H∥c move toward lower fields. These opposite behaviors are attributed to the competition between the inner magnetic field and the demagnetization effect. In addition, the angle-dependent ESR spectra of F4GT single crystal exhibit a [3 cos2(π2−φ)−1]2-like behavior, which indicates a characteristic of 2D magnetic coupling attributed to the dominant effects of q→ 0 mode. These findings provide significant insights into the complex spin couplings in F4GT and pave the way for its potential applications in microwave-based spintronic devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"2 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144252418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Sc0.2Al0.8N Lamb wave filter with a high temperature stability using the strategy of double-layer SiO2 and groove structure 采用双层SiO2和沟槽结构的策略制备了具有高温稳定性的Sc0.2Al0.8N Lamb波滤波器

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-06-09 DOI: 10.1063/5.0271904

Haiyang Li, Qinwen Xu, Binghui Lin, Xiang Chen, Jie Zhou, Tingting Yang, Zesheng Liu, Yan Liu, Shishang Guo, Yao Cai, Chengliang Sun

{"title":"Sc0.2Al0.8N Lamb wave filter with a high temperature stability using the strategy of double-layer SiO2 and groove structure","authors":"Haiyang Li, Qinwen Xu, Binghui Lin, Xiang Chen, Jie Zhou, Tingting Yang, Zesheng Liu, Yan Liu, Shishang Guo, Yao Cai, Chengliang Sun","doi":"10.1063/5.0271904","DOIUrl":"https://doi.org/10.1063/5.0271904","url":null,"abstract":"The Lamb wave filter (LWF) has a moderate bandwidth, and the conventional temperature compensation method with one layer of SiO2 on the Lamb wave resonator (LWR) will significantly reduce its effective electromechanical coupling coefficient. This, in turn, narrows the bandwidth of the LWF and limits its application range. This paper achieves high temperature stability for both the LWR and LWF by employing a strategy that combines a double-layer SiO2 and a groove structure based on a Sc0.2Al0.8N film. Finite element analysis is employed to investigate the effect of adding single or double layers of SiO2 films on the temperature stability of the Sc0.2Al0.8N LWR. The simulation results show that applying SiO2 to both the top and bottom of the Sc0.2Al0.8N film can mitigate the reduction in k2 while enhancing temperature stability. The groove structure in the piezoelectric layer can simultaneously improve the temperature coefficient of frequency (TCF) and k2 by altering the electric field distribution and boundary conditions. Measurement results show that the double-layer SiO2 improves the TCF of the LWR to approximately –10 ppm/°C. The grooves can further improve the TCF toward 0 ppm/°C and increase the k2 of LWR.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"20 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144252413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

An incoherent superconducting nanowire phonon detector revealing the controversial gate-controlled supercurrent 非相干超导纳米线声子探测器揭示有争议的门控超电流

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-06-09 DOI: 10.1063/5.0271901

Haochen Li, Labao Zhang, Jingrou Tan, Yanqiu Guan, Zhuolin Yang, Qi Chen, Hao Wang, Xiaoqing Jia, Lin Kang, Peiheng Wu

{"title":"An incoherent superconducting nanowire phonon detector revealing the controversial gate-controlled supercurrent","authors":"Haochen Li, Labao Zhang, Jingrou Tan, Yanqiu Guan, Zhuolin Yang, Qi Chen, Hao Wang, Xiaoqing Jia, Lin Kang, Peiheng Wu","doi":"10.1063/5.0271901","DOIUrl":"https://doi.org/10.1063/5.0271901","url":null,"abstract":"Superconductor nanodevices are widely applied in quantum computers and quantum detectors. Gate-controlled supercurrent (GCS) provides a potential platform for developing quantum systems, but the mechanism remains controversial. Recent reports suggest that there may be out-of-equilibrium phonons acting in GCS, but insightful investigations are lacking. Here, we report an incoherent superconducting nanowire phonon detector to convert the phase transitions induced by out-of-equilibrium phonons into electric pulse signals, enabling discrete-time measurements. The statistical properties of the gate-induced signals reveal the Poisson properties of phonon injection and the thermalization dynamics of hot electrons in the GCS on the α-Si substrate. These mechanisms are further evidenced by applying opposite gate voltages on two remote gates, in which only phonons play a role. The proposed detector not only is a candidate for constructing phonon-based solid quantum devices based on the GCS but also contributes to research on the out-of-equilibrium phenomena in superconducting nanodevices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"40 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144252420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Phase zonal reconstruction via differential metasurface 通过微分超表面进行相位分区重建

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-06-09 DOI: 10.1063/5.0271268

Huan Chen, Qiang Yang, Shuoqing Liu, Jiawei Liu, Hailu Luo

引用次数: 0

Low-temperature-annealed Ohmic contacts to ultrathin-AlGaN/GaN heterostructures with no two-dimensional electron gas 低温退火欧姆接触到超薄algan /GaN异质结构，无二维电子气体

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-06-09 DOI: 10.1063/5.0260035

Kazuya Uryu, Yuchen Deng, Takuma Nanjo, Toshi-kazu Suzuki

{"title":"Low-temperature-annealed Ohmic contacts to ultrathin-AlGaN/GaN heterostructures with no two-dimensional electron gas","authors":"Kazuya Uryu, Yuchen Deng, Takuma Nanjo, Toshi-kazu Suzuki","doi":"10.1063/5.0260035","DOIUrl":"https://doi.org/10.1063/5.0260035","url":null,"abstract":"We investigated low-temperature-annealed Ohmic contacts to ultrathin-AlGaN/GaN heterostructures with no two-dimensional electron gas (2DEG), which have extremely high sheet resistances of ∼1012 Ω/□. The Ohmic contacts are formed by metal deposition and low-temperature annealing at &lt;600 °C, where a contact resistance down to ≃0.74 Ω mm can be realized. In order to evaluate the sheet resistance ρs, the sheet electron concentration ns, and the electron mobility μs of the AlGaN/GaN under the Ohmic-metals, we fabricated and characterized multi-probe Hall devices. As a result, we find ρs significantly decreased down to ∼600 Ω/□, ns in the 1012 cm−2 range, and μs&gt;1000 cm2/V-s under the Ohmic-metals, where the relationship between ns and μs suggests that a 2DEG is formed at the AlGaN/GaN heterointerface. The specific contact resistivity weakly depends on both ns and the measurement temperature, being well explained by direct tunneling between the formed 2DEG and the Ohmic-metal. Furthermore, it is found that the sheet resistance after Ohmic-metal removal returns to the initial value of ∼1012 Ω/□. One possible hypothesis to explain this is that polarization doping takes place under the Ohmic-metals.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"80 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144252417","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

200-period Si/Si0.8Ge0.2 superlattice structure growth and characterization for vertical stacked DRAM 垂直堆叠DRAM的200周期Si/Si0.8Ge0.2超晶格结构生长与表征

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-06-09 DOI: 10.1063/5.0253276

Xiaomeng Liu, Xiangsheng Wang, Xinhe Wang, Fan Yang, Hailing Wang, Yanpeng Song, Xinyou Liu, Ying Zhang, Han Wang, Wenhao Zhang, Zhenzhen Kong, Zhaoqiang Bai, Guilei Wang, Chao Zhao

{"title":"200-period Si/Si0.8Ge0.2 superlattice structure growth and characterization for vertical stacked DRAM","authors":"Xiaomeng Liu, Xiangsheng Wang, Xinhe Wang, Fan Yang, Hailing Wang, Yanpeng Song, Xinyou Liu, Ying Zhang, Han Wang, Wenhao Zhang, Zhenzhen Kong, Zhaoqiang Bai, Guilei Wang, Chao Zhao","doi":"10.1063/5.0253276","DOIUrl":"https://doi.org/10.1063/5.0253276","url":null,"abstract":"The demand for increased memory density and the limit of DRAM (dynamic random-access memory) device downscaling are driving conventional DRAM to advanced vertical stacked DRAM (VS DRAM). The multi-period Si/SiGe superlattice (SL) structure is crucial for achieving vertical stacking of Si channels, and the film quality of the Si/SiGe SL structure has a direct impact on the performance of subsequent DRAM devices. In this work, we obtained the 200-period Si/Si0.8Ge0.2 SL structure through multiple-epitaxial processes. The experimental results show that the crystal quality of the SL structure is satisfactory, exhibiting slight strain relaxation. The thickness uniformity in the SL structure is well maintained from bottom to top (36.7 ± 2.1 nm, σthickness = 0.77 nm). Furthermore, Ge segregation at the bottom of the SL structure was observed, resulting in a slight upward trend in the Ge concentration from bottom to top and a broadening of the bottom interface. This work demonstrates the feasibility of epitaxial growth of ultra-multilayer Si/SiGe SL structure and provides a process solution for the development of advanced VS DRAM devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"36 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144252421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Investigation on high-order planar Hall effect in trigonal PtBi2 三角形PtBi2的高阶平面霍尔效应研究

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-06-09 DOI: 10.1063/5.0258340

Fangqi Cai, Mingxi Chi, Yingjie Hu, Heyao Liu, Yangyang Chen, Chao Jing, Wei Ren, He Wang

{"title":"Investigation on high-order planar Hall effect in trigonal PtBi2","authors":"Fangqi Cai, Mingxi Chi, Yingjie Hu, Heyao Liu, Yangyang Chen, Chao Jing, Wei Ren, He Wang","doi":"10.1063/5.0258340","DOIUrl":"https://doi.org/10.1063/5.0258340","url":null,"abstract":"The trigonal PtBi2 (t-PtBi2) as a Weyl semimetal possessing triply degenerate points in its electronic bands near the Fermi level endows it with rich electronic properties. Previous studies have already measured the planar Hall effect (PHE) and in-plane anisotropic magnetoresistance (AMR) of t-PtBi2. We noticed that their experimental results exhibited high-order features in both the PHE and AMR, yet these features were not systematically investigated. In our work, we conducted more systematic measurements and analyses of the PHE and AMR in t-PtBi2. Both PHE and AMR show high-order features under low temperatures and strong magnetic fields, and these features share a similar temperature and magnetic field dependence with the “turn-on” behavior of resistance and temperature curves, indicating a common physical origin for them. We further summarize the critical conditions for the emergence of high-order PHE in t-PtBi2, which will help to understand the origin of high-order features. In addition, we performed computational simulations on the AMR of t-PtBi2, and the results were consistent with the experiments, indicating the high-order features are the result of the combined contribution of the Fermi surface anisotropy and the scaling behavior of magnetoresistance. Our findings will contribute to a deeper understanding of the origins of high-order features in non-magnetic topological materials.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"588 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144260052","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhanced electrocaloric effect in relaxor ferroelectric polymers through hot press processing 热压加工增强弛豫铁电聚合物的热效应

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-06-09 DOI: 10.1063/5.0270941

Linxiao Xu, Shengfei Tang, Chenyi Li, Yang Liu

引用次数: 0

Dielectric breakdown of atmospheric-pressure grown hexagonal boron nitride single crystals 常压生长六方氮化硼单晶的介电击穿

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-06-09 DOI: 10.1063/5.0270459

Zhiyuan Sheng, Ming Tian, Xinyu Chen, Zerui Wang, Xunbing Cai, Neng Wan, Shiwei Wu

{"title":"Dielectric breakdown of atmospheric-pressure grown hexagonal boron nitride single crystals","authors":"Zhiyuan Sheng, Ming Tian, Xinyu Chen, Zerui Wang, Xunbing Cai, Neng Wan, Shiwei Wu","doi":"10.1063/5.0270459","DOIUrl":"https://doi.org/10.1063/5.0270459","url":null,"abstract":"High-quality hexagonal boron nitride (hBN) has emerged as a reliable dielectric material for two-dimensional (2D) electronic devices because of its atomic flatness, ultrahigh optical transparency, wide energy bandgap, and high dielectric breakdown field. Traditionally, the best-quality hBN is mostly synthesized under high pressure and high temperature (HPHT). Because the HPHT method requires complex apparatus and limits the size of hBN crystals, it is desirable to grow large-area and high-quality hBN single crystals by a simpler method such as the synthesis under atmospheric pressure and high temperature (APHT). However, the comprehensive characterizations of APHT grown single crystals, particularly the dielectric breakdown information required for electronic applications, are still lacking. Here, we fabricate more than 30 graphite/hBN/graphite devices to systematically characterize the dielectric breakdown behaviors of APHT grown hBN crystals, along with other hBN crystals grown by different methods or vendors for direct comparison. The field values of dielectric breakdown, defined by the onset of leakage current, monotonically increase with the decrease in hBN thickness. Below the thickness of 10 nm, the field value reaches above 8 MV/cm. The dielectric breakdown behavior is comparable to that grown by HPHT. Our statistic results, along with the characterizations of X-ray diffraction, Raman spectroscopy, atomic force microscopy, and optical second harmonic generation microscopy, show that the hBN crystal under APHT is an ideal substitute for designing and fabricating the best-quality 2D electronic devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"11 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144260072","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0