Applied Physics Letters最新文献_第10页

High-performance non-doped deep-blue/white OLEDs via HLCT-type oxazole emitter with negligible efficiency roll-off 通过hlct型恶唑发射极的高性能非掺杂深蓝/白色oled，其效率滚降可以忽略不计

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-09-25 DOI: 10.1063/5.0288801

Xin Ge, Qiao Luo, Huixia Xu, Hua Wang, Ding Zheng, Junsheng Yu

{"title":"High-performance non-doped deep-blue/white OLEDs via HLCT-type oxazole emitter with negligible efficiency roll-off","authors":"Xin Ge, Qiao Luo, Huixia Xu, Hua Wang, Ding Zheng, Junsheng Yu","doi":"10.1063/5.0288801","DOIUrl":"https://doi.org/10.1063/5.0288801","url":null,"abstract":"Stable deep-blue emitters with high-efficiency and low-efficiency roll-off are crucial for the commercialization of deep-blue organic light-emitting diodes (OLEDs). Hybridized local and charge-transfer (HLCT) emitters can achieve high external quantum efficiency (EQE) and extremely low efficiency roll-off through efficient high-lying reverse intersystem crossing. In this work, we developed a simple, efficient deep-blue HLCT emitter, PBOAn2N, which exhibited an emission peak at 446 nm with CIE coordinates of (0.131, 0.086). The related OLED device achieved the maximum EQE of 9.7%, demonstrating an exceptionally low efficiency roll-off of merely 1.0% at 1000 cd m−2. Furthermore, when employed as a host material for an orange phosphorescent emitter, PBOAn2N demonstrated exceptional performance with a maximum EQE of 25.7% and an ultralow efficiency roll-off of merely 0.4% at 1000 cd m−2. By integrating a PBOAn2N-based blue-emitting layer into the orange phosphorescent system, we fabricated a two-color hybrid WOLED with minimal roll-off (2.3% at 1000 cd m−2), achieving near-ideal CIE coordinates approaching (0.333, 0.333). Notably, the optimized device attained a record-high color rendering index of 68.4, representing one of the best performances reported for two-color hybrid WOLEDs, thereby showcasing the significant potential of PBOAn2N-based systems for high-quality white light emission applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"31 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145140791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Type-1.5 SNSPD: Interacting vortex theory of two bandgap superconducting single photon detectors Type-1.5 SNSPD：两个带隙超导单光子探测器的相互作用涡旋理论

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-09-25 DOI: 10.1063/5.0289611

Leif Bauer, Daien He, Sathwik Bharadwaj, Shunshun Liu, Prasanna V. Balachandran, Zubin Jacob

引用次数: 0

High-performance triple-band ultraviolet photodetector based on mixed-phase InGaO thin film for material identification 基于混相InGaO薄膜材料鉴别的高性能三波段紫外探测器

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-09-25 DOI: 10.1063/5.0281387

Yucheng Hou, Xiaobo She, Xiang Wang, Xiwu Huang, Lei Li, Yingxu Wang, Xupeng Yang, Jiaqing Yuan, Lingfei Li, Changtai Xia, Shan Li, Yufeng Guo, Weihua Tang, Yu Liu

{"title":"High-performance triple-band ultraviolet photodetector based on mixed-phase InGaO thin film for material identification","authors":"Yucheng Hou, Xiaobo She, Xiang Wang, Xiwu Huang, Lei Li, Yingxu Wang, Xupeng Yang, Jiaqing Yuan, Lingfei Li, Changtai Xia, Shan Li, Yufeng Guo, Weihua Tang, Yu Liu","doi":"10.1063/5.0281387","DOIUrl":"https://doi.org/10.1063/5.0281387","url":null,"abstract":"The wavelength-dependent nature of material reflectance in the ultraviolet (UV) range makes multi-band UV response analysis an effective technique for material identification. In this work, a triple-band UV photodetector was constructed on the In2O3-Ga2O3 (InGaO) mixed-phase thin films. By incorporating In into Ga2O3 via plasma-enhanced chemical vapor deposition method, the bandgap of the mixed-phase InGaO thin films was modulated to 4.64 eV, extending the spectral response range to cover UVA (365 nm), UVB (295 nm), and UVC (255 nm) bands. This broadband photoresponse enables quantitative analysis of material-specific UV reflectance signatures, offering a reliable basis for material differentiation. Integrating a 5 × 4 photodetector array with convolutional neural networks, a precise identification and an accurate imaging of geometrically identical materials (Al, Ag, Si, and Au) were realized. For Al, Ag, and Si, this system achieves an overall accuracy exceeding 95%. This work proposes an efficient strategy for nondestructive surface inspection and material recognition by combining multi-spectral sensing with intelligent data processing.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"17 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145140804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Deciphering the true active phases of bifunctional oxygen electrocatalyst in rechargeable zinc–air batteries: A case study of CoMoO4 可充电锌-空气电池中双功能氧电催化剂真活性相的解析：以CoMoO4为例

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-09-25 DOI: 10.1063/5.0293300

Hongru Hao, Jiahui Wang, Jian Zhou, Lingling Xu, Zhe Lv, Bo Wei

引用次数: 0

Strain-driven interfacial engineering in metal–MoS2 contacts 金属-二硫化钼接触中应变驱动的界面工程

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-09-24 DOI: 10.1063/5.0281223

Xinbiao Wang, Jiao Xu, Euyheon Hwang, Ji-Sang Park

引用次数: 0

Nonreciprocal spin transport in twisted bilayer zigzag graphene nanoribbons 扭曲双层之字形石墨烯纳米带中的非互易自旋输运

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-09-24 DOI: 10.1063/5.0285200

Shujie Yu, Jichao Sheng, Jia Zhang, Yurong Su

引用次数: 0

Meta-dissipation: A framework for quantifying energy dissipation in dissipative discrete periodic metamaterials 元耗散：一个量化耗散离散周期超材料能量耗散的框架

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-09-24 DOI: 10.1063/5.0281511

Arnab Banerjee, Kamal Krishna Bera, Sondipon Adhikari

引用次数: 0

Research on the interface characteristics and leakage mechanisms of β -Ga2O3 MFIS capacitors using an HfO2–ZrO2 superlattice layer HfO2-ZrO2超晶格层β -Ga2O3 MFIS电容器界面特性及泄漏机理研究

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-09-24 DOI: 10.1063/5.0287669

Dong-Liang Chen, Yun-Long He, Peng Liu, Xuan Huang, Shuo Zhang, Wei-Wei Chen, Lei Wang, Jun Yang, Guran Chen, Xiao-Li Lu, Lin-An Yang, Xue-Feng Zheng, Xiao-Hua Ma, Yue Hao

{"title":"Research on the interface characteristics and leakage mechanisms of β -Ga2O3 MFIS capacitors using an HfO2–ZrO2 superlattice layer","authors":"Dong-Liang Chen, Yun-Long He, Peng Liu, Xuan Huang, Shuo Zhang, Wei-Wei Chen, Lei Wang, Jun Yang, Guran Chen, Xiao-Li Lu, Lin-An Yang, Xue-Feng Zheng, Xiao-Hua Ma, Yue Hao","doi":"10.1063/5.0287669","DOIUrl":"https://doi.org/10.1063/5.0287669","url":null,"abstract":"This letter reports the fabrication and characterization of β−Ga2O3 metal/ferroelectric/insulator/semiconductor (MFIS) capacitors employing 3 types of HfO2–ZrO2 superlattice (SL) ferroelectric gate dielectrics: SL5, SL10, and SL15, constructed by alternating 5,10, and 15 ALD cycles of HfO2 and ZrO2, respectively, with conventional Hf0.5Zr0.5O2 (HZO) as a reference. Following rapid thermal annealing (RTA) at 550 °C for 30 s, all dielectrics are confirmed to exhibit the orthorhombic (111) phase by grazing-incidence x-ray diffraction (GIXRD). Electrical measurements reveal that the SL5 structure achieves an outstanding reduction in leakage current, decreasing from 0.936 A cm−2 (HZO) to 0.004 A cm−2 at 3 V, and exhibits the highest remanent polarization (2Pr = 29.3 μC cm−2), compared to 27.3 μC cm−2 (HZO), 22.4 μC cm−2 (SL10), and 17 μC cm−2 (SL15). Moreover, the SL5 capacitor demonstrates excellent reliability, maintaining robust endurance up to 1 × 1011 cycles at room temperature and 1 × 1010 cycles at 150 °C without degradation and stable retention over 1 × 104 s. Importantly, interface state analysis reveals that after annealing, SL5 maintains the lowest and most stable interface trap density within the energy range of 0.25–0.45 eV. The trap state density (6.39 × 1012–7.11 × 1012 cm−2 eV−1) is significantly lower than that of HZO in the same energy range. These results highlight the advantages of superlattice-engineered ferroelectric gate dielectrics for achieving high-quality interfaces, low leakage current, and stable ferroelectric performance, providing a promising route toward high-performance, enhancement-mode β−Ga2O3 MOSFET devices for next-generation power electronics.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"2 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145133487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Causal discovery from data assisted by large language models 在大型语言模型的帮助下，从数据中发现因果关系

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-09-24 DOI: 10.1063/5.0272287

Kamyar Barakati, Aleksander Molak, Chris Nelson, Xiaohang Zhang, Ichiro Takeuchi, Sergei V. Kalinin

{"title":"Causal discovery from data assisted by large language models","authors":"Kamyar Barakati, Aleksander Molak, Chris Nelson, Xiaohang Zhang, Ichiro Takeuchi, Sergei V. Kalinin","doi":"10.1063/5.0272287","DOIUrl":"https://doi.org/10.1063/5.0272287","url":null,"abstract":"Knowledge-driven discovery of novel materials necessitates the development of causal models for property emergence. While in the classical physical paradigm, the causal relationships are deduced based on physical principles or via experiment, the rapid accumulation of observational data necessitates learning causal relationships between dissimilar aspects of material structure and functionalities based on observations. For this, it is essential to integrate experimental data with prior domain knowledge. Here, we demonstrate this approach by combining high-resolution scanning transmission electron microscopy data with insights derived from large language models (LLMs). By applying ChatGPT to domain-specific literature, such as arXiv papers on ferroelectrics, and combining the obtained information with data-driven causal discovery, we construct adjacency matrices for directed acyclic graphs that map the causal relationships between structural, chemical, and polarization degrees of freedom in Sm-doped BiFeO3. This approach enables us to hypothesize how synthesis conditions influence material properties and guides experimental validation. The ultimate objective of this work is to develop a unified framework that integrates LLM-driven literature analysis with data-driven discovery, facilitating the precise engineering of ferroelectric materials by establishing clear connections between synthesis conditions and their resulting material properties.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"1 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145133493","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Tensile strain induced enhancement of the electron transport in polar two-dimensional (2D) InN 拉伸应变诱导极性二维电子输运的增强

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-09-24 DOI: 10.1063/5.0279147

Xiaohui Zhou, Xin Ma, Xiaomei Zhang, Chenhai Shen, Congxin Xia, Kun Yu, Yufang Liu

{"title":"Tensile strain induced enhancement of the electron transport in polar two-dimensional (2D) InN","authors":"Xiaohui Zhou, Xin Ma, Xiaomei Zhang, Chenhai Shen, Congxin Xia, Kun Yu, Yufang Liu","doi":"10.1063/5.0279147","DOIUrl":"https://doi.org/10.1063/5.0279147","url":null,"abstract":"Two-dimensional (2D) semiconductors have been regarded as promising candidates for next-generation nanoelectronics devices. However, the intrinsically low carrier mobility severely limits device performance. In this work, we have systematically investigated the carrier transport in 2D hexangular InN based on the ab initio Boltzmann transport theory. The room-temperature carrier mobility is evaluated over a wide range of carrier concentration (n2D), with the free-carrier screening effect incorporated via the 2D homogeneous electron gas model. The high intrinsic electron mobility of InN is verified. At low n2D, the electron mobility remains nearly a constant of 790 cm2 V−1s−1, whereas a peak value of 1150 cm2 V−1s−1 is observed at high n2D. Our mode-by-mode analysis of the scattering events demonstrates that the long-range electron–phonon couplings govern the electron transport. The high electron mobility is attributed to the exceptionally small effective masses in combination with the significant suppression of LO-phonon scattering. Furthermore, we show that applying biaxial tensile strain can significantly enhance the electron transport. At low n2D = 1 × 1010 cm−2, 3% tensile strain makes the mobility increase by 186%. The further analysis has demonstrated that the mobility enhancement results from the increased band velocity and the reduced scattering rates. Our work not only sheds light on the carrier transport in 2D InN but also underscores its great promise for high-performance electronic devices. Moreover, the provided estimation of the gauge factor highlights the potential for strain-sensing applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"22 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145133634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0