Applied Physics Letters最新文献_第10页

High-quality simultaneous bright-field and dark-field imaging based on the light-field matrix model 基于光场矩阵模型的高质量同时明暗场成像

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-29 DOI: 10.1063/5.0253792

Kang Liu, Jia Wu, Jing Cao, Rusheng Zhuo, Xiaoxi Chen, Qiang Zhou, Pinghe Wang, Guohua Shi

{"title":"High-quality simultaneous bright-field and dark-field imaging based on the light-field matrix model","authors":"Kang Liu, Jia Wu, Jing Cao, Rusheng Zhuo, Xiaoxi Chen, Qiang Zhou, Pinghe Wang, Guohua Shi","doi":"10.1063/5.0253792","DOIUrl":"https://doi.org/10.1063/5.0253792","url":null,"abstract":"Dark-field imaging is widely used due to its high resolution and high contrast, but traditional methods are susceptible to noise interference and require frequent switching between bright-field and dark-field modes. This not only increases imaging complexity and sample exposure time but also affects imaging consistency. This paper proposes a simultaneous bright-field and dark-field imaging techniques based on the light-field matrix (LFM) model. Using a single light source under weak scattering conditions, the technique constructs a light-field matrix model and employs the optical field decomposition principle from transmission matrix (TM) theory to decompose the light field into three components: bright-field signals corresponding to single-scattered photons, dark-field signals corresponding to multiple-scattered photons, and noise signals. This method enables simultaneous acquisition of bright-field and dark-field images, simplifying the imaging process and reducing noise interference. Additionally, by incorporating low-rank and sparse matrix decomposition techniques, background light field interference is effectively eliminated, resulting in a 1.8-fold improvement in the dark-field imaging contrast. Experimental results demonstrate the broad applicability of this technique to various biological samples, validating its feasibility in the field of biological imaging and providing an innovative and practical solution for efficient and reliable imaging in complex scenarios.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"42 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143889454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Achieving strength–ductility trade-off of brittle soft magnetic multi-principal element alloy via metastability engineering 亚稳态工程实现脆性软磁多主元合金强度-延性平衡

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-29 DOI: 10.1063/5.0258067

Peilin Dong, Liufei Huang, Qiuju Yang, Xuanhong Cai, Xiaojun Zhao, Lei Ma, Xiaochong Zhao, Zhiyong Zhong, Jinfeng Li

引用次数: 0

Even-in-magnetic field part of transverse resistivity as a probe of magnetic transitions 横向电阻率在磁场中的均匀部分作为磁跃迁的探头

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-29 DOI: 10.1063/5.0269699

Antonin Badura, Dominik Kriegner, Eva Schmoranzerová, Karel Výborný, Miina Leiviskä, Rafael Lopes Seeger, Vincent Baltz, Daniel Scheffler, Sebastian Beckert, Ismaila Kounta, Lisa Michez, Libor Šmejkal, Jairo Sinova, Sebastian T. B. Goennenwein, Jakub Železný, Helena Reichlová

{"title":"Even-in-magnetic field part of transverse resistivity as a probe of magnetic transitions","authors":"Antonin Badura, Dominik Kriegner, Eva Schmoranzerová, Karel Výborný, Miina Leiviskä, Rafael Lopes Seeger, Vincent Baltz, Daniel Scheffler, Sebastian Beckert, Ismaila Kounta, Lisa Michez, Libor Šmejkal, Jairo Sinova, Sebastian T. B. Goennenwein, Jakub Železný, Helena Reichlová","doi":"10.1063/5.0269699","DOIUrl":"https://doi.org/10.1063/5.0269699","url":null,"abstract":"The component of the resistivity tensor ρij corresponding to voltage transverse to both an applied current and a magnetic field can be separated into odd and even parts with respect to the applied magnetic field. The former contains information, for example, about the ordinary or anomalous Hall effect. The latter is often ascribed to experimental artifacts and ignored. Here, we show that upon suppressing these artifacts in carefully controlled experiments, useful information remains. We first investigate the well-explored ferromagnet CoFeB, where the even part of ρyx contains a contribution from the anisotropic magnetoresistance, which we confirm by Stoner–Wohlfarth modeling. We then apply our approach to magnetotransport measurements of Mn5Si3 thin films, which undergo a transition from non-collinear to an altermagnetic collinear state. In this material, the even part of the transverse signal is sizable only in the low-spin-symmetry phase below ≈80 K. Transverse resistivity measurements thus offer a simple and readily available probe of magnetic order transitions.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"70 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143889463","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Non-contact characterization of material hardness by deep learning-assisted electromagnetic acoustic resonance method 基于深度学习辅助电磁声共振方法的材料硬度非接触表征

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-29 DOI: 10.1063/5.0265254

Jinshan Wen, Mingxi Deng, Weibin Li

引用次数: 0

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-29 DOI: 10.1063/5.0268612

Biao Zheng, Lianzhong Deng, Hongmei Ma, Jun Wang, Yunhua Yao, Dalong Qi, Yuecheng Shen, Zhenrong Sun, Shian Zhang

{"title":"Defect-related luminescence in BaF2 nanoparticles for plant cell imaging","authors":"Biao Zheng, Lianzhong Deng, Hongmei Ma, Jun Wang, Yunhua Yao, Dalong Qi, Yuecheng Shen, Zhenrong Sun, Shian Zhang","doi":"10.1063/5.0268612","DOIUrl":"https://doi.org/10.1063/5.0268612","url":null,"abstract":"Materials with luminescent defects, serving as energy traps and luminescence centers, exhibit the advantages of tunable emission spectra and cost-effective synthesis processes and can be used for biological imaging applications. In this paper, we present an experimental investigation into the defect-related luminescence of small-sized (&lt; 30 nm) BaF2 nanoparticles (NPs) and explore their application in plant cell imaging. Uniformly morphological BaF2 NPs are synthesized via the solvothermal method. Photoluminescence (PL) studies have demonstrated that these NPs exhibit broad and defect-related luminescence across a wide range of excitation wavelength in the UV-Vis region, characterized by high luminescent efficiency, excellent optical stability, and reversible temperature dependence. Utilizing a 4F-configuration two-dimensional (2D) laser-scan optical system, a prototype fluorescence imaging experiment is conducted on onion epidermal cells incubated with BaF2 NPs under continuous-wave (cw) laser excitation at varying wavelengths. The scanned fluorescence images, which accurately reproduced the cell structures, underscore the unique target specificity and high biocompatibility of the prepared NPs, positioning them as a competitive candidate for fluorescence probes in biological applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"39 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143884849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A grain boundary embrittlement genome for substitutional cubic alloys 取代立方合金的晶界脆化基因组

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-29 DOI: 10.1063/5.0264543

Nutth Tuchinda, Gregory B. Olson, Christopher A. Schuh

引用次数: 0

One-shot detection of light ellipticity using a two-dimensional quantum material device 利用二维量子材料装置进行光椭圆度的单次检测

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-29 DOI: 10.1063/5.0265301

Zhiyi Zhang, Mingxue Ren, Yuekun Yang, Wentao Yu, Qian Zhang, Zhaoming Liang, Yi Kong, Shuang Wang, Pengfei Wang, Zhu-An Li, Chen Pan, Bin Cheng, Shi-Jun Liang, Xinyi Cui, Feng Miao

{"title":"One-shot detection of light ellipticity using a two-dimensional quantum material device","authors":"Zhiyi Zhang, Mingxue Ren, Yuekun Yang, Wentao Yu, Qian Zhang, Zhaoming Liang, Yi Kong, Shuang Wang, Pengfei Wang, Zhu-An Li, Chen Pan, Bin Cheng, Shi-Jun Liang, Xinyi Cui, Feng Miao","doi":"10.1063/5.0265301","DOIUrl":"https://doi.org/10.1063/5.0265301","url":null,"abstract":"Detection of light ellipticity is of crucial importance for target imaging and recognition in complex scenarios. However, it has been challenging to achieve one-shot detection of light ellipticity by a single conventional optoelectronic device, due to coupling between light intensity and polarization. Here, we realize one-shot detection of light ellipticity by using a single four-terminal valley Hall device based on monolayer MoS2 quantum material. The device can decouple the light intensity and the elliptical polarization and enable simultaneous detection of the light intensity and the elliptical polarization by using photoconduction and valley Hall effects. We show that the light ellipticity can be directly detected by measuring the Hall resistance of the device, which is defined as the ratio between the Hall voltage and the photocurrent. Furthermore, we demonstrate that our proposed approach can be used for detecting microplastics present in soil at a higher recognition precision than conventional approaches. Our work highlights the potential of exploiting unique properties of 2D quantum materials for multi-dimensional perception of optical information.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"24 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143889671","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Mechanism of the negative linear temperature coefficient of resistance in defective nanocarbon materials 缺陷纳米碳材料电阻负线性温度系数的机理

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-29 DOI: 10.1063/5.0250313

Takahiro Morimoto, Takumi Inaba, Satoshi Yamazaki, Kazufumi Kobashi, Toshiya Okazaki

{"title":"Mechanism of the negative linear temperature coefficient of resistance in defective nanocarbon materials","authors":"Takahiro Morimoto, Takumi Inaba, Satoshi Yamazaki, Kazufumi Kobashi, Toshiya Okazaki","doi":"10.1063/5.0250313","DOIUrl":"https://doi.org/10.1063/5.0250313","url":null,"abstract":"This paper presents the evidential results of the negative linear temperature coefficient mechanism commonly observed in defect-containing nanocarbon materials. Single-walled carbon nanotubes (CNTs) were annealed at high temperatures ranging from 1200 to 3000 °C. These samples exhibited a general hopping conduction-like behavior between the CNTs in the pristine state. However, the high-temperature annealed samples exhibited a resistance change with a negative temperature coefficient. Recently, we proposed that the origin of this negative linear temperature dependence of resistance behavior is a scattering phenomenon due to Friedel oscillations occurring in a flat graphene sheet containing defects. In fact, from the cross-sectional high-resolution transmission electron microscopy images, we found that the tube structure of the CNTs collapsed and fused with each other in the high-temperature annealed samples, revealing a stacked, flat graphite structure. These results show that the Friedel scattering phenomenon originates from the negative linear temperature coefficient widely observed in defect-containing nanocarbon materials. This negative linear temperature coefficient provides important information on the application of nanocarbon materials to thermistors, which have recently attracted significant attention, and on the optimal design guidelines for such thermistors. Moreover, the nonzero current and nondivergent resistance behavior based on the Friedel scattering phenomenon provide more stable measurement conditions for the quantum research field, including quantum computing, cryptography, and communications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"46 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143889673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fiber-optic photoacoustic sensor with SF6 purity correction for decomposition derivative H2S based on 1f and 2f dual-modes 基于1f和2f双模的SF6纯度校正分解导数H2S光纤光声传感器

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-28 DOI: 10.1063/5.0269814

Xinyu Zhao, Heng Wang, Yufu Xu, Chenxi Li, Hongchao Qi, Min Guo, Wei Peng, Ke Chen

{"title":"Fiber-optic photoacoustic sensor with SF6 purity correction for decomposition derivative H2S based on 1f and 2f dual-modes","authors":"Xinyu Zhao, Heng Wang, Yufu Xu, Chenxi Li, Hongchao Qi, Min Guo, Wei Peng, Ke Chen","doi":"10.1063/5.0269814","DOIUrl":"https://doi.org/10.1063/5.0269814","url":null,"abstract":"A single fiber-optic photoacoustic sensor (FOPAS) is applied for the simultaneous detection of the SF6 purity and decomposition derivative H2S, and the photoacoustic measurement results are corrected based on the SF6 purity. SF6 purity and H2S gas concentration are identified by tracking frequency and detecting photoacoustic signal based on 1f and 2f, respectively. The influence of SF6 purity on the resonance frequency, photoacoustic excitation intensity, and cantilever frequency response are theoretically derived, simulated, and experimentally verified. In the range of 80%–100%, there is a linear relationship between the resonance frequency and the SF6 purity, with a response of 1.923 Hz/% and a minimum purity change detection limit of 0.02%.The FOPAS based on the designed T-type photoacoustic cell achieves a detection limit of 5 ppb for H2S, and the normalized noise equivalent absorption coefficient of the FOPAS reaches 4 × 10−10 cm−1 Hz−1/2 W. Taking SF6 purity of 97% as an example, the frequency response of FOPAS and the photoacoustic signal are evaluated both before and after correction. By correcting the resonance frequency and photoacoustic signal, the detection accuracy of H2S gas is improved by 9%. By adopting the SF6 purity and decomposition derivative overall analysis method, simultaneous high-precision and high-sensitivity monitoring of dual-state parameters has been achieved, providing technical support for accurate early warning of latent faults in SF6 gas-insulation equipment.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"8 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143884885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Doping-driven robust superconductivity in tungsten for single-photon detection 用于单光子探测的掺杂驱动钨的鲁棒超导性

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-28 DOI: 10.1063/5.0259894

Liang Ma, Chen Wei, Hao Wang, Qi Chen, Labao Zhang, Yanqiu Guan, Zhuolin Yang, Wenlei Yin, Rui Yin, Jingrou Tan, Haochen Li, Shuya Guo, Mengfan Zhang, Yue Fei, Huabing Wang, Lin Kang, Peiheng Wu

{"title":"Doping-driven robust superconductivity in tungsten for single-photon detection","authors":"Liang Ma, Chen Wei, Hao Wang, Qi Chen, Labao Zhang, Yanqiu Guan, Zhuolin Yang, Wenlei Yin, Rui Yin, Jingrou Tan, Haochen Li, Shuya Guo, Mengfan Zhang, Yue Fei, Huabing Wang, Lin Kang, Peiheng Wu","doi":"10.1063/5.0259894","DOIUrl":"https://doi.org/10.1063/5.0259894","url":null,"abstract":"Elemental superconductors are widely applied in quantum electronic devices, providing a homogenous research platform for both fundamental science and revolutionary technologies. However, their application in superconducting electronics remains a challenge due to the ultralow operation temperatures and suboptimal stability. Here, we develop a nitrogen-doping strategy to enhance the superconductivity of ultrathin amorphous superconductors for single-photon detection. The interstitial N dopants induce the amorphization of W, resulting in an enhanced superconducting transition temperature of 4.4 K from 0.01 K (α-W). Furthermore, the surface nitroxide passivation layer ensures smooth and homogeneous topography at the wafer scale and provides strong chemical stability for nanodevice fabrication in a 6.0-nm-thick nitrogen-doped amorphous tungsten (NAW) film. Consequently, we achieve NAW-based infrared SNSPDs with saturated quantum efficiency at an operation temperature of &gt;1 K. This doping strategy can be applied to more elemental superconductors and, thus, promote their practical use in electronic devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"39 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143884893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0