Applied Physics Letters最新文献_第10页

Band engineering for large perpendicular magnetocrystalline anisotropy and low magnetic Gilbert damping constant by anion substitution at Fe/MgO interface

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-02-24 DOI: 10.1063/5.0248379

Y.-N. Apriati, K. Nawa, K. Nakamura

引用次数: 0

Impact of growth temperature on heterostructure interface steepness in ultraviolet-B AlGaN-based laser diodes

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-02-24 DOI: 10.1063/5.0242536

Takumu Saito, Rintaro Miyake, Ryoya Yamada, Yoshinori Imoto, Shundai Maruyama, Yusuke Sasaki, Shogo Karino, Sho Iwayama, Hideto Miyake, Koichi Naniwae, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya

{"title":"Impact of growth temperature on heterostructure interface steepness in ultraviolet-B AlGaN-based laser diodes","authors":"Takumu Saito, Rintaro Miyake, Ryoya Yamada, Yoshinori Imoto, Shundai Maruyama, Yusuke Sasaki, Shogo Karino, Sho Iwayama, Hideto Miyake, Koichi Naniwae, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya","doi":"10.1063/5.0242536","DOIUrl":"https://doi.org/10.1063/5.0242536","url":null,"abstract":"This study investigates the steepness of the heterostructure interface between the p-side optical-waveguide and electron blocking layer (EBL) in ultraviolet-B (UV-B) laser diodes (LDs), focusing on the impact of growth temperature. The results revealed that lowering the growth temperature significantly reduced the thickness of the “unintended compositionally graded layer” a diffusion layer formed at the interface through solid-phase diffusion. However, a bottleneck also existed in LDs with extremely steep interfaces, where the diode characteristics could not be obtained due to the device's high resistance. This study highlights the trade-off between the steepness of the interfaces in the AlGaN heterostructure and diode performance, indicating the need for further optimization to achieve high-performance UV-B LDs. Specifically, future efforts should focus on refining growth conditions to reduce impurity concentrations resulting from low-temperature growth and controlling the thickness of individual layers, such as the EBL, to address high resistance and achieve high-performance UV-B LDs.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"32 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143486496","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electron thermometry for Si MOS inversion layer using proximity nano-transistor and its application to Joule-heating experiment

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-02-24 DOI: 10.1063/5.0239500

Hossain Md Nayem, Masahiro Hori, Katsuhiko Nishiguchi, Yukinori Ono

引用次数: 0

Valley-contrasting physics, topological bands, and Dirac cone in the charge density wave phase of a 1T-MoS2 monolayer

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-02-24 DOI: 10.1063/5.0252317

Lv Qiu, Chunhua Zeng, Xiaobo Feng, Lin Zhuang, Wuming Liu, Zhaoming Fu

引用次数: 0

A multi-degree-of-freedom model-based method for Young's modulus determination of soft tissue by resonance spectroscopy

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-02-24 DOI: 10.1063/5.0252527

Yujie Hu, Kecai Lu, Zhuangyu Li, Daming Zhou

引用次数: 0

Strain-induced Kramers–Weyl phase in III–V zinc blende systems

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-02-24 DOI: 10.1063/5.0253139

Denis Aglagul, Jian Shi

引用次数: 0

Efficient quantum frequency conversion of ultra-violet single photons from a trapped ytterbium ion

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-02-24 DOI: 10.1063/5.0241469

Seungwoo Yu, Kyungmin Lee, Sumin Park, Kyunghye Kim, Junhong Goo, Jeonghyun Park, Taehyun Kim

{"title":"Efficient quantum frequency conversion of ultra-violet single photons from a trapped ytterbium ion","authors":"Seungwoo Yu, Kyungmin Lee, Sumin Park, Kyunghye Kim, Junhong Goo, Jeonghyun Park, Taehyun Kim","doi":"10.1063/5.0241469","DOIUrl":"https://doi.org/10.1063/5.0241469","url":null,"abstract":"Ion trap system is a leading candidate for quantum information science benefitting from its long coherence time, high-fidelity gate operations. In addition, the ion photon entanglement provides a versatile tool to realize quantum networks by generating an ideal pair of a stationary memory qubit and a flying communication qubit. Rapid developments in nonlinear quantum frequency conversion techniques have enhanced the potential for constructing a trapped ion quantum network via optical fiber connections. The generation of long-distance entanglement has been demonstrated with ions such as Ca+ and Ba+, which emit photons in visible or near-infrared range naturally. On the other hand, as the qubit-native photons reside in ultra-violet (UV) spectrum, the Yb+ ion has not been considered as a strong competitor for telecommunication qubits despite extensive research on it. Here, we demonstrate an efficient difference-frequency conversion of UV photons, emitted from a trapped Yb+ ion, into a visible range. We provide experimental evidence that confirms the converted photons are radiated from the Yb+ ion. Our results provide a crucial step toward realizing a long-distance trapped ion quantum network based on Yb+ ions through quantum frequency conversion.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"65 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143486483","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Gradient-based optimization of spintronic devices

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-02-24 DOI: 10.1063/5.0238687

Y. Imai, S. Liu, N. Akashi, K. Nakajima

引用次数: 0

On the dependence of internal stress on dislocation inclination pattern in HVPE-GaN substrates

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-02-24 DOI: 10.1063/5.0255742

Fei-Fei Zhou, Zhi-Qiao Li, Miao Liu, Yong-Xin Qiu, Ting-Ting Yin, Yu Xu, Yu-Min Zhang, Mu-Tong Niu, De-Min Cai, Jian-Feng Wang, Ke Xu

{"title":"On the dependence of internal stress on dislocation inclination pattern in HVPE-GaN substrates","authors":"Fei-Fei Zhou, Zhi-Qiao Li, Miao Liu, Yong-Xin Qiu, Ting-Ting Yin, Yu Xu, Yu-Min Zhang, Mu-Tong Niu, De-Min Cai, Jian-Feng Wang, Ke Xu","doi":"10.1063/5.0255742","DOIUrl":"https://doi.org/10.1063/5.0255742","url":null,"abstract":"Internal stress in gallium nitride (GaN) induced during epitaxy growth can degrade the performance of GaN devices. This work studied the internal stress distribution and dislocation configuration around an inclusion of ∼300 μm in GaN substrates grown by hydride vapor phase epitaxy, by means of combined Raman spectroscopy, x-ray topography, and two-photon excitation photoluminescence. The inclusion-induced internal stress decreased exponentially along the radial direction. However, the internal stress, though reduced to a small magnitude, was unexpectedly maintained and propagated over long distances. A stress localization phenomenon, which was out of the prediction of classic elasticity theory, was also observed. The inclination of threading dislocations was found to be substantially influenced by the unreported distribution of internal stress. Four characteristic dislocation inclination patterns were identified: the two-short-tooth pattern, two-long-tooth pattern, gear pattern, and sun-like pattern. The dependence of internal stress on the dislocation inclination pattern was revealed. Based on this dependence, a method to predict the stress field in crystal based on dislocation pattern without corrosion was proposed.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"65 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143486490","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Nonlinear response of hybrid magnons in synthetic antiferromagnets

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-02-24 DOI: 10.1063/5.0251351

Daiju Hayashi, Yoichi Shiota, Mujin You, Albert Min Gyu Park, Kab-Jin Kim, Hideki Narita, Ryusuke Hisatomi, Shutaro Karube, Teruo Ono

引用次数: 0