Applied Physics Letters最新文献_第10页

DC and power-frequency electric field measurement with Rydberg-atom interferometry 用里德堡原子干涉法测量直流和工频电场

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-16 DOI: 10.1063/5.0272159

Yingying Han, Changfa He, Zhenxiong Weng, Peng Xu, Yanting Zhao, Tao Wang

{"title":"DC and power-frequency electric field measurement with Rydberg-atom interferometry","authors":"Yingying Han, Changfa He, Zhenxiong Weng, Peng Xu, Yanting Zhao, Tao Wang","doi":"10.1063/5.0272159","DOIUrl":"https://doi.org/10.1063/5.0272159","url":null,"abstract":"We propose a Rydberg-atom interferometry-based technique for direct current (DC) electric field measurement, enabling the detection of weak fields (&lt;0.5V/cm) and unambiguous discrimination of DC electric field direction (for the one-dimensional case, i.e., ±ɛdc). This makes up for the shortcomings of measurements based on the Stark effect, which suffer from quadratic field dependence (limiting sensitivity in weak field regimes), rendering it incapable of distinguishing the DC electric field direction. Furthermore, this method extends naturally to power-frequency (PF) electric field measurement by exploiting the quasi-static approximation—valid given the PF field's characteristic timescale (∼10−2 s) vastly exceeds the interferometric measurement duration (10−6−10−3 s). Crucially, our protocol provides instantaneous PF electric field reconstruction, providing comprehensive information, including amplitude, frequency, and phase. These advancements have direct implications for traceable DC electric field measurement and noninvasive characterization of PF electric fields near high-voltage infrastructure.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"3 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144639809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Quantum and dielectric confinement on phosphorus donors in silicon nano-transistors for high-temperature single-electron tunneling 用于高温单电子隧道的硅纳米晶体管中磷给体的量子和介电约束

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-16 DOI: 10.1063/5.0273866

Pooja Sudha, Soumya Chakraborty, Daniel Moraru, Arup Samanta

{"title":"Quantum and dielectric confinement on phosphorus donors in silicon nano-transistors for high-temperature single-electron tunneling","authors":"Pooja Sudha, Soumya Chakraborty, Daniel Moraru, Arup Samanta","doi":"10.1063/5.0273866","DOIUrl":"https://doi.org/10.1063/5.0273866","url":null,"abstract":"The intrinsically low tunnel barriers of conventional phosphorus-donors in bulk silicon preclude the observation of single-electron tunneling at practical temperatures. However, scaling devices to the nanometer dimensions introduces pronounced quantum and dielectric confinement effects, leading to elevated tunnel barriers. Here, we experimentally demonstrated strong confinement effects on three isolated donors located extremely close to the buried-oxide layer within a silicon-on-insulator nano-transistor channel region. Consequently, increased ionization-energies exceeding 100 meV are observed, which suggest confined donor potential with increased charging-energies, consistent with observed high-temperature Coulomb-oscillations. Such enhanced energy scales of isolated donors facilitate the room-temperature operation, even with a conventional donor such as phosphorus, which is corroborated by Coulomb-blockade simulations. These findings will boost up the advancement of the development of single-donor-based single-electron devices, bringing them closer to practical applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"3 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144639695","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Remarkably suppressed lattice thermal conductivity of InAs nanowires by surface electron–phonon coupling 表面电子-声子耦合显著抑制了InAs纳米线的晶格热导率

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-16 DOI: 10.1063/5.0277012

Renzong Wang, Yucheng Xiong, Jianshi Sun, Yongxiang Zhou, Guanyao Song, Ge Chen, Xiangjun Liu

{"title":"Remarkably suppressed lattice thermal conductivity of InAs nanowires by surface electron–phonon coupling","authors":"Renzong Wang, Yucheng Xiong, Jianshi Sun, Yongxiang Zhou, Guanyao Song, Ge Chen, Xiangjun Liu","doi":"10.1063/5.0277012","DOIUrl":"https://doi.org/10.1063/5.0277012","url":null,"abstract":"The electron accumulation layer at the semiconductor nanowire surface can lead to intriguing transport phenomena and novel electronic applications. While much progress has been made in uncovering the effect of electron–phonon interactions on phonon transport in heavily doped semiconductors, the roles of the surface charge accumulation layer on thermal transport remain elusive. In this work, through measuring electrical and thermal conductivities of InAs nanowires of various diameters, we report a remarkable suppression of lattice thermal conductivity due to surface electron–phonon coupling. Contrary to the classical size effect due to electron-boundary scattering, the measured electrical conductivity of InAs nanowires increases as the diameter decreases. This observation stems from the enhanced contribution of surface electrons in smaller-diameter nanowires, which also renders a comparable electronic contribution to thermal conductivity alongside phonons. The extracted lattice thermal conductivity at room temperature is reduced by ∼73% compared to previously reported values and those predicted by first-principles calculations for intrinsic InAs nanowires. This discrepancy is well explained by the transport models incorporating both surface electron–phonon coupling and phonon-boundary scattering at the nanowire surface. These findings not only provide direct experimental data for quantifying the impact of surface electron–phonon interactions on lattice thermal conductivity but also highlight the potential of surface-state engineering as a viable strategy for tailoring thermal transport in semiconductors for thermoelectric and nanoelectronic applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"16 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144639700","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Improving light extraction efficiency by p-orbital tuning in multifaceted AlGaN multiple quantum wells 多面AlGaN多量子阱中p轨道调谐提高光提取效率

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-15 DOI: 10.1063/5.0271739

Ge Gao, Li Chen, Weiguang Yang, Wei Guo, Jichun Ye

引用次数: 0

Electromechanical switching in DNA–CNT supramolecular structures dna -碳纳米管超分子结构中的机电开关

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-15 DOI: 10.1063/5.0272693

Olaiyan Alolaiyan, Arpan De, M. P. Anantram

{"title":"Electromechanical switching in DNA–CNT supramolecular structures","authors":"Olaiyan Alolaiyan, Arpan De, M. P. Anantram","doi":"10.1063/5.0272693","DOIUrl":"https://doi.org/10.1063/5.0272693","url":null,"abstract":"The characteristics of the interface between DNA and metallic carbon nanotube (CNT) in supramolecular assemblies are important to understand for electronic and sensing applications. We study the mechanical stability and electronic properties of these interfaces with amino and ester linkers using computational experiments. Our study demonstrates that both linkers significantly enhance the mechanical stability of DNA–CNT systems, with the DNA adopting a stable and lower energy perpendicular orientation relative to the CNT as opposed to a conventional parallel arrangement. This lower energy configuration is driven by nonbonded interactions between the DNA base and the CNT surface. Our calculations also reveal that interface resistance is primarily governed by DNA–CNT interactions with negligible contribution from the linkers. In the case of the amino linker, we predict a 100-fold transmission ratio between parallel and perpendicular configurations of DNA relative to CNT. This observation can be used to build an electromechanical switch with fast switching times (30 ns). The ester linker, on the contrary, enables a better electronic coupling between the DNA and CNT even when strained.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"130 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144639785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Magnetic modulations in (La,Sr)MnO3 heterostructures via interfacial oxygen vacancy engineering 界面氧空位工程对（La,Sr）MnO3异质结构的磁调制

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-15 DOI: 10.1063/5.0257910

Chengye Yin, Zeyu Zha, Chengcheng Xu, Junjie Wang, Mingyang Fan, Song Dai, Zhipeng Xu, Liqiang Xu, Kun Han, Zhen Huang, Pingfan Chen

{"title":"Magnetic modulations in (La,Sr)MnO3 heterostructures via interfacial oxygen vacancy engineering","authors":"Chengye Yin, Zeyu Zha, Chengcheng Xu, Junjie Wang, Mingyang Fan, Song Dai, Zhipeng Xu, Liqiang Xu, Kun Han, Zhen Huang, Pingfan Chen","doi":"10.1063/5.0257910","DOIUrl":"https://doi.org/10.1063/5.0257910","url":null,"abstract":"The control of interfacial oxygen vacancy provides additional functional tunability to correlated oxide heterostructures. Here, we studied the role of amorphous capping layers, such as LaAlO3 and LaMnO3, in controlling magnetic properties of (La,Sr)MnO3//SrTiO3 heterostructures. When (La,Sr)MnO3 layers are thin (∼4 nm), the amorphous LaAlO3 capping layer significantly suppresses the ferromagnetic interaction, denoted by a decreased Curie temperature TC (ΔTC over −300 K) and saturated moment MS (ΔMS at −2.9 μB/Mn) compared to the uncapped counterparts, irrespective of epitaxial orientations. This ferromagnetic suppression is attributed to the creation of interfacial oxygen vacancies, as evidenced by the recovery of ferromagnetism upon ex situ annealing (1 h at 625 °C in air). Moreover, when replacing LaAlO3 with LaMnO3, the reduction of oxygen affinity in the capping layer results in less pronounced magnetic modulations with ΔTC at −100 K and ΔMS at −1.1 μB/Mn. Also, the increase in (La,Sr)MnO3 layer thickness dilutes the capping-layer effect, leading to negligible changes on TC and MS in the LaAlO3-capped 40-nm-thick (La,Sr)MnO3//SrTiO3 samples. Our results not only shed some light on understanding the capping-layer effect in manganite-based heterostructures but also offer a feasible strategy for functional modulations at other oxide interfaces.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"7 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144629515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Retina-inspired spike processing for neuromorphic color recognition 视网膜激发的脉冲处理用于神经形态颜色识别

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-15 DOI: 10.1063/5.0268126

Jiaying Gong, Chenxing Jin, Jingwen Wang, Wanrong Liu, Xiaofang Shi, Jia Sun, Junliang Yang

引用次数: 0

High-order harmonic generation and nonlinear chirality based on accidental bound states in the continuum 基于连续统中偶然束缚态的高次谐波产生和非线性手性

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-15 DOI: 10.1063/5.0276913

Yuan Liu, Junxian Shi, Zhengqi Liu, Shijie Cai, Jing Chen, Xiaoshan Liu, Guiqiang Liu

{"title":"High-order harmonic generation and nonlinear chirality based on accidental bound states in the continuum","authors":"Yuan Liu, Junxian Shi, Zhengqi Liu, Shijie Cai, Jing Chen, Xiaoshan Liu, Guiqiang Liu","doi":"10.1063/5.0276913","DOIUrl":"https://doi.org/10.1063/5.0276913","url":null,"abstract":"Dielectric metasurfaces supporting bound states in the continuum (BICs) exhibit exceptional capabilities for capturing optical fields and are thus widely utilized to enhance light–matter interactions at nanoscales, such as nonlinear optical effects and chiroptic effects. However, it remains a considerable challenge to simultaneously realize significant high-order nonlinear circular dichroism (CD) and strong high-order nonlinear responses. In this work, we theoretically propose high-efficiency third harmonic generation (THG), direct fifth harmonic generation (dFHG), cascaded fifth harmonic generation (cFHG), and corresponding high-order nonlinear chiroptic effects in a Si-based metasurface based on the accidental BICs (A-BICs). Strong THG, dFHG, and cFHG signals, respectively, with high conversion efficiencies of 1.1%, 1.31 × 10−9, and 8.77 × 10−6 are achieved under the fundamental pump intensity of 1 MW/cm2 and the efficiency of dFHG is boosted by three orders of magnitude by the cascaded approach based on the degenerate four-wave mixing. Importantly, the generated FHG signals are located in the deep ultraviolet region with the full width at half maximum less than 0.15 nm, significantly contributing to the development of deep ultraviolet lasers. Furthermore, strong linear CD, THG CD, dFHG CD, and cFHG CD are also achieved with the maximum values approaching 1. Our findings provide a feasible approach for developing high-efficiency high-order nonlinearity and near-perfect high-order chiral nonlinear optical devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"45 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144639703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Intrinsic magnetic properties and domain structure of ThMn12-type (Sm, Zr)(Fe, Co, M)12 (M = Ti, Mo) compounds thmn12型（Sm, Zr）（Fe, Co， M）12 （M = Ti, Mo）化合物的本征磁性能和畴结构

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-15 DOI: 10.1063/5.0280231

Shaohua Fan, Zhongchong Lin, Baochun Wu, Hui-Dong Qian, Xiaobai Ma, Wenyun Yang, Xiaoxiao Fang, Qing Xu, Jingzhi Han, Honglin Du, Jinbo Yang, Yingchang Yang

{"title":"Intrinsic magnetic properties and domain structure of ThMn12-type (Sm, Zr)(Fe, Co, M)12 (M = Ti, Mo) compounds","authors":"Shaohua Fan, Zhongchong Lin, Baochun Wu, Hui-Dong Qian, Xiaobai Ma, Wenyun Yang, Xiaoxiao Fang, Qing Xu, Jingzhi Han, Honglin Du, Jinbo Yang, Yingchang Yang","doi":"10.1063/5.0280231","DOIUrl":"https://doi.org/10.1063/5.0280231","url":null,"abstract":"The structure, intrinsic magnetic properties, and domain structure of Sm0.7Zr0.3(Fe0.75Co0.25)11.5M0.5 (M = Ti, Mo) compounds were systematically investigated using neutron diffraction, magnetic measurements, magneto-optical Kerr effect, and first-principles calculations. The results demonstrate that the ThMn12-type structure is co-stabilized by substituting Zr for Sm at the 2a site and M for Fe at the 8i site. The effect of M substitution on the electronic band structure can be explained by the rigid band model, where the d–d electron-orbital hybridization between M and Fe leads to a negative effect on the Fe local magnetic moment. Besides, M changes the magnetic anisotropy by altering the electronic density surrounding Sm. Both the compounds exhibit higher Curie temperatures and magnetocrystalline anisotropy fields compared to the well-known Nd2Fe14B magnet, with Tc and μ0Ha reaching 819.3 K and 9.23 T for M = Ti, and 820.0 K and 8.41 T for M = Mo, respectively. The relevant magnetic domain parameters also indicate that these compounds have significant potential for the development of permanent magnet materials.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"23 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144629487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Packaged cryogenic photon pair source using an effective packaging methodology for cryogenic integrated optics 低温集成光学中采用有效封装方法的封装低温光子对源

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-15 DOI: 10.1063/5.0283650

Donald Witt, Lukas Chrostowski, Jeff Young

引用次数: 0