Applied Physics Letters最新文献_第10页

Dual-function GaN QWD chip for real-time joint flexion and gesture recognition 用于实时关节屈曲和手势识别的双功能GaN QWD芯片

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-03-30 DOI: 10.1063/5.0314878

Kang Fu, Wenxuan Wu, Ziqi Ye, Jianwei Fu, Jiabin Yan, Fan Shi, Wei Cai, Yongjin Wang

引用次数: 0

Inverse design epsilon-near-zero-based broadband nonreciprocal thermal emitter using hybrid deep learning framework 利用混合深度学习框架反设计基于epsilon-近零的宽带非互反热发射器

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-03-30 DOI: 10.1063/5.0323320

Jun-Yang Sui, Hai-Feng Zhang

{"title":"Inverse design epsilon-near-zero-based broadband nonreciprocal thermal emitter using hybrid deep learning framework","authors":"Jun-Yang Sui, Hai-Feng Zhang","doi":"10.1063/5.0323320","DOIUrl":"https://doi.org/10.1063/5.0323320","url":null,"abstract":"Nonreciprocal thermal radiation, which breaks Kirchhoff's law by decoupling absorptivity and emissivity, is essential for advanced radiative heat transfer control. However, achieving broadband and tunable nonreciprocal thermal radiation with high design efficiency remains a challenge. This study proposes a novel hybrid deep learning framework, integrating the Artificial Rabbit Optimization and tandem neural network, to inversely design multilayer films (MLFs) based on magnetized gradient epsilon-near-zero (ENZ) InAs layers. By using the Artificial Rabbit Optimization algorithm, we collect a high-quality dataset with a noise ratio of only 3.2%, significantly reducing computational overhead compared to random sampling. The multitasking tandem neural network converges to a low cost function of 0.086, improving the accuracy and avoiding the scattering problem faced by traditional neural networks. Results show that significant nonreciprocal thermal radiation (nonreciprocity &gt; 0.637 and peak 0.723) is achieved in the 14–19 μm range by exploiting the magneto-optical effects of InAs and ENZ-induced Brewster modes. Furthermore, the MLFs exhibit reversed absorptivity and emissivity spectra under reversed magnetic fields. These findings provide a data-efficient and scalable solution for dynamic thermal management and infrared camouflage, demonstrating the powerful synergy between deep learning and nonreciprocal photonics.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"18 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-03-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147578034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Debris mitigation of a Xe discharge-produced plasma source combined gas jet and Halbach cylinder Xe放电产生的等离子体源组合气体射流和Halbach圆柱体的碎片缓减

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-03-27 DOI: 10.1063/5.0318617

Jiale Zheng, Chenhao Zhou, Guo Yang, Kai Leong Chong, Quan Zhou, Xiao Ling, Jianhua Zhang

引用次数: 0

Transient extension process of the off-state depletion region in GaN HEMTs with SiO2 passivation 二氧化硅钝化GaN hemt中非状态耗尽区的瞬态扩展过程

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-03-27 DOI: 10.1063/5.0290603

Jiayin He, Xin Wang, Ju Gao, Chen Wang, Ziheng Liu, Wenbo Xia, Hongjie Peng, Chengkang Ao, Hongyue Wang, Jinyan Wang

引用次数: 0

Impact of substrate resistivity on the high-power and long-lifetime conduction characteristics of intrinsically triggered 4H-SiC PCSS 衬底电阻率对本质触发4H-SiC PCSS大功率长寿命导通特性的影响

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-03-27 DOI: 10.1063/5.0316766

Xianchao Yu, Xun Sun, Guanglei Zhong, Yangfan Li, Fangbo Zheng, Mengqiao Hu, Duanxi Wu, Longfei Xiao, Chongbiao Luan, Xiufang Chen, Hongtao Li, Xiangang Xu

{"title":"Impact of substrate resistivity on the high-power and long-lifetime conduction characteristics of intrinsically triggered 4H-SiC PCSS","authors":"Xianchao Yu, Xun Sun, Guanglei Zhong, Yangfan Li, Fangbo Zheng, Mengqiao Hu, Duanxi Wu, Longfei Xiao, Chongbiao Luan, Xiufang Chen, Hongtao Li, Xiangang Xu","doi":"10.1063/5.0316766","DOIUrl":"https://doi.org/10.1063/5.0316766","url":null,"abstract":"The conduction efficiency and reliability of photoconductive semiconductor switches (PCSSs) are strongly influenced by the resistivity of semi-insulating 4H-SiC substrates. In this work, PCSSs fabricated on four 4H-SiC substrates with resistivities ranging from 2.59 × 1011 to &gt;1 × 1012 Ω cm were evaluated under intrinsic excitation (355 nm) and high-voltage, high-repetition operation. All devices exhibit similar optical saturation behavior and comparable switching speed, indicating consistent optical absorption and intrinsic response. In contrast, pronounced differences in conduction stability and degradation behavior emerge under high electric fields and high repetition rates. Under saturated excitation, the low-resistivity device achieves a voltage-conversion efficiency of 99.3%. It also delivers a stable 10 MW peak output for 35 min at 500 Hz, corresponding to more than 106 switching cycles. In comparison, devices fabricated on higher-resistivity substrates exhibit accelerated output decay and more severe electrode degradation. Technology Computer Aided Design simulations yield conduction characteristics consistent with the experimental observations. These results highlight the critical role of substrate resistivity of intrinsically triggered 4H-SiC PCSSs and provide guidance for material selection in high-voltage fast-pulse switching applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"229 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147524018","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Three-dimensional inhomogeneous characteristics of low-frequency plasma oscillations in wall-less Hall thrusters 无壁霍尔推力器中低频等离子体振荡的三维非均匀特性

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-03-26 DOI: 10.1063/5.0324411

Yifei Li, Weizong Wang, Wei Liu, Guangchuan Zhang, Yuankai Yang

引用次数: 0

Study of leakage current in GaN junction field-effect transistor under heavy ion radiation 重离子辐射下GaN结场效应晶体管漏电流的研究

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-03-26 DOI: 10.1063/5.0313387

Jianan Song, Zequan Chen, Yuxin Du, Yixin Xiong, Rongming Chu, Miaomiao Jin

{"title":"Study of leakage current in GaN junction field-effect transistor under heavy ion radiation","authors":"Jianan Song, Zequan Chen, Yuxin Du, Yixin Xiong, Rongming Chu, Miaomiao Jin","doi":"10.1063/5.0313387","DOIUrl":"https://doi.org/10.1063/5.0313387","url":null,"abstract":"GaN junction field-effect transistors (JFETs) were fabricated and subjected to 333.7 MeV gold (Au) ion irradiation to investigate the effects of swift heavy ions on device performance. Electrical characterization following irradiation revealed a significant and permanent increase in off-state leakage current. The leakage was attributed to a vertical conduction mechanism, likely to originate from latent ion tracks formed within the device during SHI exposure. The results indicate a latent track-induced vertical leakage path in GaN JFETs under SHI irradiation. Temperature-dependent current–voltage measurements indicated a voltage-dependent activation energy, suggesting a field-assisted transport process. Device simulations reproduced the experimental leakage behavior and identified the critical leakage path at the p+-GaN/p-GaN region, where the local electric field is most intense. The conduction mechanism was found to be consistent with the Poole–Frenkel emission model, from which a barrier height of approximately 0.38 eV was extracted. These findings offer insights into SHI-induced degradation in GaN devices and provide guidance for designing radiation-hardened GaN electronics for space applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"44 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147524020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Comparing the phonons and vibrations in carbon allotropes with neutron spectroscopy: Microdiamond, few-layer graphene, and amorphous fibers 用中子光谱学比较碳同素异形体中的声子和振动：微金刚石、少层石墨烯和非晶纤维

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-03-26 DOI: 10.1063/5.0314605

Md. Rezoanur Rahman, Caleb Stamper, Kyle A. Portwin, Xiaolin Wang, Richard A. Mole, Pablo Galaviz, Aiswarya Pradeepkumar, Kirrily C. Rule, Dehong Yu, David L. Cortie

引用次数: 0

Suppressed electron–phonon coupling in Ag-doped CsPbBr3 for high-performance photodetectors ag掺杂CsPbBr3用于高性能光电探测器的抑制电子-声子耦合

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-03-25 DOI: 10.1063/5.0321026

Chinmay Barman, Sandeep Kumar Chinthala, Sai Prasad Goud R., S. V. S. Nageswara Rao, Venugopal Rao Soma, Sai Santosh Kumar Raavi

{"title":"Suppressed electron–phonon coupling in Ag-doped CsPbBr3 for high-performance photodetectors","authors":"Chinmay Barman, Sandeep Kumar Chinthala, Sai Prasad Goud R., S. V. S. Nageswara Rao, Venugopal Rao Soma, Sai Santosh Kumar Raavi","doi":"10.1063/5.0321026","DOIUrl":"https://doi.org/10.1063/5.0321026","url":null,"abstract":"Charge transport in metal halide perovskites is strongly limited by electron–phonon coupling (EPC) and trap-assisted recombination, which together hinder carrier mobility and device efficiency. Therefore, precise control of EPC strength is crucial for realizing high-performance optoelectronic devices, such as photodetectors. Here, we demonstrate a strategy to overcome these limitations by suppressing Fröhlich electron–phonon coupling in CsPbBr3 nanocrystals through strategic Ag-doping. Low temperature photoluminescence data reveal a dramatic suppression of the Fröhlich interaction, with the EPC strength narrowing from 85.1 ± 8.2 to 45.3 ± 6.1 meV, accompanied by a reduced activation energy upon Ag incorporation. This suppression of phonon-mediated dissipation is further validated by ultrafast transient absorption studies, which reveals significantly prolonged ground-state bleach recovery and extended carrier lifetimes. Consequently, Ag-doped photodetectors exhibit a record detectivity of ∼8.4 × 1013 Jones, an on/off ratio of ∼107, and a fourfold enhancement in the responsivity (0.64 A/W). The near-unity photocurrent behavior with intensity (exponent of 0.98), along with emission behavior, confirms Ag-doping passivates defects and improves carrier extraction. These results establish a strong correlation between lattice engineering and macroscopic device physics, offering a scalable route to high-performance, phonon-managed perovskite optoelectronics.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"90 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147524062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Atomic-level revelation of spontaneous polarization orientation and piezoelectricity in ε -Ga2O3 ε -Ga2O3自发极化取向和压电性的原子水平揭示

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-03-25 DOI: 10.1063/5.0321241

Yan Wang, Zhigao Xie, Yizhang Guan, Jiahe Cao, Yibo Zhang, Guofeng Hu, Yu Bai, Yew Hoong Wong, Guosong Zeng, Zhiqiang Huang, Chee Keong Tan

{"title":"Atomic-level revelation of spontaneous polarization orientation and piezoelectricity in ε -Ga2O3","authors":"Yan Wang, Zhigao Xie, Yizhang Guan, Jiahe Cao, Yibo Zhang, Guofeng Hu, Yu Bai, Yew Hoong Wong, Guosong Zeng, Zhiqiang Huang, Chee Keong Tan","doi":"10.1063/5.0321241","DOIUrl":"https://doi.org/10.1063/5.0321241","url":null,"abstract":"Advancing polarization control in semiconductors is pivotal for next-generation electronics, enabling revolutionary advances in energy and industrial systems. The metastable ε-Ga2O3 holds promise for polarization-engineered devices but remains hindered by unresolved polarization orientation and ambiguous piezoelectric responses. Here, using an integrated experimental and theoretical approach, we demonstrate that ε-Ga2O3 exhibits a spontaneous polarization (Psp) of −24.8 μC/cm2 oriented antiparallel to the crystal growth direction. The piezoelectric coefficient d33 was experimentally measured as 4.125 pm/V, in strong agreement with the theoretical value of 4.93 pm/V. The phase-pure ε-Ga2O3 films were grown via low-pressure mist-CVD with exceptional crystallinity, as evidenced by an x-ray diffractometer rocking curve [full-width-at-half-maximum (FWHM) = 0.08°]. Optimized piezoelectric force microscopy protocols were employed to determine d33, while the orientation of Psp was resolved using pulsed DC bias-dependent amplitude/phase-voltage measurements combined with aberration-corrected scanning transmission electron microscopy. This multimodal methodology enabled direct mapping of bound charge distributions at the film surface and provided atomic-scale visualization of crystal orientation. These findings clarify ε-Ga2O3 polarization ambiguities, establish structure–property relationships, and unlock transformative potential for advancing power electronics, high-frequency communication systems, and energy-efficient memory technologies.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"229 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147524023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0