Applied Physics Letters最新文献_第10页

Field-free spin–orbit torque magnetization switching in Pt/CoTb devices grown on flexible substrates for neuromorphic computing 在柔性衬底上生长的 Pt/CoTb 器件中实现无场自旋-轨道力矩磁化切换，用于神经形态计算

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-10-29 DOI: 10.1063/5.0231869

Wei Wang, Chuanwei Feng, Yiheng Wang, Qikun Huang, Dong Wang, Yibo Fan, Xiang Han, Lihui Bai, Yanxue Chen, Yufeng Tian, Shishen Yan

{"title":"Field-free spin–orbit torque magnetization switching in Pt/CoTb devices grown on flexible substrates for neuromorphic computing","authors":"Wei Wang, Chuanwei Feng, Yiheng Wang, Qikun Huang, Dong Wang, Yibo Fan, Xiang Han, Lihui Bai, Yanxue Chen, Yufeng Tian, Shishen Yan","doi":"10.1063/5.0231869","DOIUrl":"https://doi.org/10.1063/5.0231869","url":null,"abstract":"Flexible spintronic devices based on spin–orbit torque (SOT)-induced perpendicular magnetization switching (PMS) have attracted increasing attention due to their high storage intensity and good programming capability. However, to achieve deterministic PMS, an in-plane auxiliary magnetic field is required, which greatly limits its application. Here, we show that “robust” magnetic field-free SOT-driven PMS is realized in the oblique sputtered Pt/CoTb multilayers grown on a flexible polyimide substrate. “Robust” means the magnetic field-free SOT switching is highly repeatable and stable after 100 bending cycles under various bending conditions. Additionally, the fabricated flexible multilayers exhibit nearly linear and nonvolatile multistate plasticity as synapses and a nonlinear sigmoid activation function when acting as neurons. We construct a fully connected neural network for handwritten digit recognition, achieving an over 96.27% recognition rate. Our findings may spur further investigations on the SOT-based flexible spintronic devices for wearable artificial intelligence applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":4.0,"publicationDate":"2024-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142541752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

TE-polarized leaky-wave beam launchers: Generation of Bessel and Bessel–Gauss beams TE 偏振漏波光束发射器：生成贝塞尔和贝塞尔-高斯光束

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-10-29 DOI: 10.1063/5.0234371

E. Negri, W. Fuscaldo, D. González-Ovejero, P. Burghignoli, A. Galli

引用次数: 0

Low-cost green antisolvent with an ultrawide processing window for efficient and stable perovskite solar cells 具有超宽加工窗口的低成本绿色抗溶剂，适用于高效稳定的过氧化物太阳能电池

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-10-29 DOI: 10.1063/5.0235360

Hui Li, Junhui Han, Qimin Lan, Zhe Wu, Cong Shao, Xing'ao Li, Jizheng Wang

{"title":"Low-cost green antisolvent with an ultrawide processing window for efficient and stable perovskite solar cells","authors":"Hui Li, Junhui Han, Qimin Lan, Zhe Wu, Cong Shao, Xing'ao Li, Jizheng Wang","doi":"10.1063/5.0235360","DOIUrl":"https://doi.org/10.1063/5.0235360","url":null,"abstract":"Antisolvent engineering is one of the most useful strategies to get high-efficiency perovskite solar cells (PSCs). Nevertheless, the most present commonly used effective antisolvents, such as chlorobenzene and diethyl ether, are toxic and expensive. Moreover, these antisolvents applied in PSCs are rather restricted due to their narrow processing window. Herein, we report a low-cost green antisolvent isopropanol (IPA) that displays ultrawide processing window, which dramatically enhances the reproducibility of PSCs. The highest power conversation efficiency of PSCs treated by IPA can reach as high as 24.8%. The origin of IPA effects is further disclosed by the intermolecular hydrogen-bonding force between IPA and DMF/DMSO, and the force can effectively remove DMF/DMSO in the spinning perovskite precursor film and helpfully enhance perovskite crystal growth with less carrier recombination as demonstrated by using various techniques. Our results here demonstrate a cheap green antisolvent for reproducible, high-efficient, stable PSCs and also provide an in-depth understanding the significant role of antisolvent in the fabrication of PSCs.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":4.0,"publicationDate":"2024-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142541749","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-efficiency and easy-processing thin-film lithium niobate edge coupler 高效率、易加工的铌酸锂薄膜边缘耦合器

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-10-29 DOI: 10.1063/5.0233467

Di Jia, Qiang Luo, Chen Yang, Rui Ma, Xuanyi Yu, Feng Gao, Qifan Yang, Fang Bo, Guoquan Zhang, Jingjun Xu

引用次数: 0

Investigating the correlation between flow dynamics and flow-induced voltage generation 研究流动动力学与流动诱导电压产生之间的相关性

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-10-29 DOI: 10.1063/5.0230115

Hikaru Takeda, Naoya Iwamoto, Mitsuhiro Honda, Masaki Tanemura, Ichiro Yamashita, Atsuki Komiya, Takeru Okada

引用次数: 0

Room-temperature modulation of microwave conductivity in ferroelectric-gated correlated oxides 铁电门控相关氧化物中的微波传导性室温调制

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-10-29 DOI: 10.1063/5.0231424

Shizai Chu, Yifei Hao, Shaopeng Feng, Xia Hong, Keji Lai

引用次数: 0

Enhanced water splitting on (010) facet-exposed BiVO4 photoanode with improved carrier injection efficiency 提高载流子注入效率，增强(010)面暴露 BiVO4 光阳极的水分离能力

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-10-29 DOI: 10.1063/5.0231098

Hongru Zhao, Xinkong Wei, Ruiyin Gu, Mingzheng Xie, Weihua Han

{"title":"Enhanced water splitting on (010) facet-exposed BiVO4 photoanode with improved carrier injection efficiency","authors":"Hongru Zhao, Xinkong Wei, Ruiyin Gu, Mingzheng Xie, Weihua Han","doi":"10.1063/5.0231098","DOIUrl":"https://doi.org/10.1063/5.0231098","url":null,"abstract":"Transition metal oxide semiconductors, noted for their stability and suitable bandgap, are promising photoanodes for water splitting. Surface engineering is critical to tackle issues like low carrier mobility and charge recombination, stemming from atomic arrangement and Fermi level differences. While exposing dominant crystal facets boosts photocatalytic capability, it can hinder carrier injection into the electrolyte. In this study, BiVO4 films with various facet exposures were synthesized and characterized using scanning electron microscopy and x-ray diffraction to confirm their morphology and crystalline structure. Mott–Schottky analysis was employed to investigate changes in the band structure near the semiconductor–electrolyte interface, revealing that high (010)-BiVO4 facet exposure enhances carrier separation but reduces injection efficiency. The results from photoconductive atomic force microscopy tests demonstrated that enhanced band bending at the semiconductor interface improves hole transfer. Coating the (010)-BiVO4 photoanode with MoS2 and an amorphous ZrO2 interlayer yielded a photocurrent density of 0.6 mA cm−2 at 1.2 V (vs RHE) under AM 1.5 G illumination, tripling the pristine photoanode's performance and nearly tripling water splitting efficiency. Mechanism revealing the improved photoelectrochemical performance is attributed to a greater band bending on the BiVO4 surface, enhancing hole injection dynamics. This work provides a feasible strategy for a deeper understanding of the intrinsic mechanisms of facet engineering and improving the activity of photoanodes.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":4.0,"publicationDate":"2024-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142541748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Coupling light into a guided Bloch surface wave using an inversely designed nanophotonic cavity 利用反向设计的纳米光子腔将光耦合到导波布洛赫表面波中

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-10-28 DOI: 10.1063/5.0232450

Zongyuan Tang, Tian-Long Guo, Yannick Augenstein, Adriano Troia, Yanjun Liu, Matthieu Roussey, Carsten Rockstuhl, Emiliano Descrovi

{"title":"Coupling light into a guided Bloch surface wave using an inversely designed nanophotonic cavity","authors":"Zongyuan Tang, Tian-Long Guo, Yannick Augenstein, Adriano Troia, Yanjun Liu, Matthieu Roussey, Carsten Rockstuhl, Emiliano Descrovi","doi":"10.1063/5.0232450","DOIUrl":"https://doi.org/10.1063/5.0232450","url":null,"abstract":"Controlling the propagation of light in the form of surface modes on miniaturized platforms is crucial for multiple applications. For dielectric multilayers that sustain Bloch surface waves at their interface to an isotropic dielectric medium, a conventional approach to manipulate them exploits shallow surface topographies fabricated on top of the truncated stack. However, such structures typically exhibit low index contrasts, making it challenging to confine, steer, and guide the Bloch surface waves. Here, we theoretically and experimentally demonstrate a device for a Bloch surface wave platform that resonantly couples light from a cavity to a straight waveguide. The structure is designed using topology optimization in a 2D geometry under the effective index approximation. In particular, the cavity–waveguide coupling efficiency of the radiation emitted by an individual source in the cavity center is optimized. The cavity is experimentally found to exhibit a narrow resonant peak that can be tuned by scaling the structure. The waveguide is shown to guide only light that resonates in the cavity. Fully three-dimensional simulations of the entire device validate the experimental observations.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":4.0,"publicationDate":"2024-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142536657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Estimation of the friction coefficient by identifying the evolution of rough surface topography 通过识别粗糙表面地形的演变估算摩擦系数

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-10-28 DOI: 10.1063/5.0230431

Dafei Huang, Wurui Ta, Youhe Zhou

引用次数: 0

Atomistic first-principles modeling of single donor spin-qubit 单供体自旋量子比特的原子第一原理建模

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-10-28 DOI: 10.1063/5.0221229

Songqi Jia, Félix Beaudoin, Pericles Philippopoulos, Hong Guo

{"title":"Atomistic first-principles modeling of single donor spin-qubit","authors":"Songqi Jia, Félix Beaudoin, Pericles Philippopoulos, Hong Guo","doi":"10.1063/5.0221229","DOIUrl":"https://doi.org/10.1063/5.0221229","url":null,"abstract":"Using an impurity atom in crystal silicon as a spin-1/2 qubit has been made experimentally possible recently where the impurity atom acts as a quantum dot (QD). Quantum transport in and out of such a donor QD occurs in the sequential tunneling regime where a physical quantity of importance is the charging (addition) energy, which measures the energy necessary for adding an electron into the donor QD. In this work, we present a first-principles method to quantitatively predict the addition energy of the donor QD. Using density functional theory (DFT), we determine the impurity states that serve as the basis set for subsequent exact diagonalization calculation of the many-body states and energies of the donor QD. Due to the large effective Bohr radius of the conduction electrons in Si, very large supercells containing more than 10 000 atoms must be used to obtain accurate results. For the donor QD of a phosphorus impurity in bulk Si, the combined DFT and exact diagonalization predicts the first addition energy to be 53 meV, in good agreement with the corresponding experimental value. For the donor QD of an arsenic impurity in Si, the first addition energy is predicted to be 44.2 meV. The calculated many-body wave functions provide a vivid electronic picture of the donor QD.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":4.0,"publicationDate":"2024-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142536689","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0