Applied Physics Letters最新文献_第9页

Pressure-induced bandgap narrowing to Shockley–Queisser limit of quasi-two-dimensional perovskite (BA)2(FA)Sn2I7 准二维钙钛矿（BA）2(FA)Sn2I7的压力诱导带隙缩小至Shockley-Queisser极限

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-29 DOI: 10.1063/5.0266788

Hong Cui, Huafang Zhang, Shun Xu, Lingying Cheng, Haohao Tao, Lingrui Wang, Gencai Pan, Wenwu You, Yanli Mao

{"title":"Pressure-induced bandgap narrowing to Shockley–Queisser limit of quasi-two-dimensional perovskite (BA)2(FA)Sn2I7","authors":"Hong Cui, Huafang Zhang, Shun Xu, Lingying Cheng, Haohao Tao, Lingrui Wang, Gencai Pan, Wenwu You, Yanli Mao","doi":"10.1063/5.0266788","DOIUrl":"https://doi.org/10.1063/5.0266788","url":null,"abstract":"Quasi-two-dimensional (2D) tin-based perovskites are promising photoelectric materials due to their non-toxicity and excellent photoelectric properties. However, the addition of organic ligands leads to an increase in bandgap, which is unfavorable for the application of perovskites in the field of photovoltaics. The bandgap of the two-dimensional tin-based perovskite (BA)2(FA)Sn2I7 is reduced to the Shockley–Queisser limit through the application of pressure. Also, the bandgap of (BA)2(FA)Sn2I7 decreases by 0.108 eV/GPa within a pressure range of 0.0–4.0 GPa, reaching a value of 1.34 eV at 4.0 GPa, which corresponds to the Shockley–Queisser limit. With further increases in pressure above 4.0 GPa, the bandgap starts to increase and then re-decreases above 15.0 GPa. When released to ambient pressure, the reduced bandgap is still partially preserved due to structural recrystallization. Further analysis indicated that the continuous narrowing of the bandgap within 0.0–4.0 GPa is mainly due to the layer-to-layer compression before the interlayer compression in the sample, which increases the deformation pressure of the [SnI6]4− octahedra. In addition, high-pressure in situ electrical tests show that (BA)2(FA)Sn2I7 exhibits optical response under laser irradiation at 405, 450, 980, and 1532 nm and extends the optical response range to the near-infrared region. In summary, the bandgap of 2D perovskite was reduced by applying pressure, which opened up a potential way to design materials with improved properties.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"29 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143884898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Synthetic control of monolayer, bilayer, and trilayer WSe2 single crystals for high-performance 2D p-type transistors 用于高性能二维p型晶体管的单层、双层和三层WSe2单晶的合成控制

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-29 DOI: 10.1063/5.0266111

Weixu Qi, Weiqi Dang, Jia Li, Bo Li, Xidong Duan, Ruixia Wu

{"title":"Synthetic control of monolayer, bilayer, and trilayer WSe2 single crystals for high-performance 2D p-type transistors","authors":"Weixu Qi, Weiqi Dang, Jia Li, Bo Li, Xidong Duan, Ruixia Wu","doi":"10.1063/5.0266111","DOIUrl":"https://doi.org/10.1063/5.0266111","url":null,"abstract":"The two-dimensional (2D) complementary metal–oxide–semiconductor circuits require balanced performance between p-type and n-type devices, but currently, among two-dimensional semiconductor materials, the electrical performance of p-type WSe2 is significantly inferior to that of n-type MoS2. This performance bottleneck is primarily attributed to issues with the growth quality of WSe2, interfacial defects, and the influence of charged impurities, which collectively limit the application of WSe2 in low-power integrated circuits. To address this challenge, we report that the monolayer (1L), bilayer (2L), and trilayer (3L) WSe2 single crystals can be selectively grown on high-κ SiNx/Si substrate by precisely adjusting the carrier gas direction over time in a reverse-flow chemical vapor deposition system. Using this growth method, Raman/photoluminescence spectroscopy, scanning transmission electron microscopy, and selected-area electron diffraction confirm that the as-grown 1–3L WSe2 nanosheets are single-crystalline with excellent quality. By employing Pt metallization process to construct optimized metal–semiconductor contacts, the fabricated mono-to bilayer WSe2 transistors exhibit pronounced p-type characteristics with superior performance. In particular, the 1L WSe2 transistors with a channel length of 2 μm display a record-breaking on-state current of ∼500 μA/μm at room temperature. This controllable synthesis strategy demonstrates potential for advancing WSe2-based p-type electronics in microelectronic applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"86 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143889670","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Role of entropy in silicon carbide polytype competition 熵在碳化硅多型竞争中的作用

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-29 DOI: 10.1063/5.0256206

Xuanyu Jiang, Xuefeng Han, Xiaodong Pi, Deren Yang, Tianqi Deng

{"title":"Role of entropy in silicon carbide polytype competition","authors":"Xuanyu Jiang, Xuefeng Han, Xiaodong Pi, Deren Yang, Tianqi Deng","doi":"10.1063/5.0256206","DOIUrl":"https://doi.org/10.1063/5.0256206","url":null,"abstract":"Polytype control has long been a critical issue in silicon carbide single crystal growth. Empirically, the competition among different polytypes can be manipulated through temperature, carbon-to-silicon ratio, doping control, etc. However, the underlying physics remains largely elusive. Herein, we reveal that entropy difference, particularly that of the vibrational entropy and configurational entropy, is the thermodynamic origin of these polytype regulation methods. The bulk vibrational entropy difference suppresses the 3C–SiC and favors hexagonal polytypes at a higher temperature. Furthermore, the defect vibrational and configurational entropy difference arising from inequivalent carbon sites further stabilizes n-type 6H–SiC over 4H–SiC in the presence of carbon vacancies and nitrogen substitutions at elevated temperatures. These defects are reduced with high carbon chemical potentials, explaining the preference of 4H–SiC at high C/Si ratios. These entropy analyses suggest that a moderate temperature and C-rich condition are beneficial to the growth of 4H–SiC and provide physical perspectives into the thermodynamic role of phonons and defects in single crystal growth.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"19 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143889452","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Is entropy relevant to gas sensor? The case of spinel (CuCoNiCrMn)3O4 for NO2 detection 熵与气体传感器有关吗？用尖晶石（CuCoNiCrMn）3O4进行NO2检测

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-29 DOI: 10.1063/5.0253954

Xiaolei Ju, Xiao Chang, Xinchao Li, Jun Zhang, Xianghong Liu

{"title":"Is entropy relevant to gas sensor? The case of spinel (CuCoNiCrMn)3O4 for NO2 detection","authors":"Xiaolei Ju, Xiao Chang, Xinchao Li, Jun Zhang, Xianghong Liu","doi":"10.1063/5.0253954","DOIUrl":"https://doi.org/10.1063/5.0253954","url":null,"abstract":"In recent years, high-entropy oxides (HEOs) have attracted significant attention owing to the synergistic effects arising from their multi-elemental structure. In this study, we investigate spinel (CuCoNiCrMn)3O4 HEO as a selective sensor for NO2. A comprehensive investigation of its crystal structure, micromorphology, elemental information, and gas sensing properties has been conducted. Gas sensor tests show that the (CuCoNiCrMn)3O4 HEO delivers a dramatic and selective response to NO2. To further explore the impact of entropy on sensor properties, medium-entropy Mn0.2Ni0.8Fe2O4, Ni0.99Co0.01Mn0.01Fe1.99O4 and low-entropy NiMn2O4 have also been synthesized and evaluated. Both experimental and density function theory studies demonstrate that the (CuCoNiCrMn)3O4 HEO exhibits superior sensing performance, attributable to enhanced charge transfer and significant orbital hybridization between Co atoms in (CuCoNiCrMn)3O4 HEO and O atoms in NO2. This work addresses the relationship between configuration entropy (ΔSconfig) and gas sensing properties, thereby advancing the exploration of HEO materials for high performance sensor applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"140 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143889457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Self-sustaining step-flow growth: Preset nano-terraces as diffusion rails for Si-doped AlN by low-temperature MOCVD 自维持阶梯流生长：预置纳米梯田作为低温MOCVD的si掺杂AlN扩散轨道

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-29 DOI: 10.1063/5.0271592

Huangshu Zhang, Jiacheng Zhong, Jiahao Chen, Jiamin Chen, Zeren Wang, Zhijian Yang, Xuelin Yang, Lun Dai, Jiejun Wu, Tongjun Yu

{"title":"Self-sustaining step-flow growth: Preset nano-terraces as diffusion rails for Si-doped AlN by low-temperature MOCVD","authors":"Huangshu Zhang, Jiacheng Zhong, Jiahao Chen, Jiamin Chen, Zeren Wang, Zhijian Yang, Xuelin Yang, Lun Dai, Jiejun Wu, Tongjun Yu","doi":"10.1063/5.0271592","DOIUrl":"https://doi.org/10.1063/5.0271592","url":null,"abstract":"Low-temperature doping presents a promising approach to address the challenge of conductivity control in aluminum nitride (AlN), a candidate for next-generation optoelectronics and electronics. However, the metal-organic chemical vapor deposition for high-quality AlN growth typically requires elevated temperatures. To achieve low-temperature AlN growth, we have developed a method to realize a kind of “self-sustaining step-flow growth” by exploiting the inherent controllability of Al adatoms, benefiting from their limited diffusion capability. A comparative study at a growth temperature of 1050 °C demonstrates that this method helps sustain stable step-flow growth, yielding 3 μm high-quality Si-doped AlN with a conductivity of 56.1 kΩ−1 cm−1. The growth temperature can be further reduced to 980 °C, the record-low growth temperature, and the corresponding conductivity is 115 kΩ−1 cm−1. This advancement offers critical insights into the AlN surface kinetics under doping and paves the way for industrial AlN applications as a semiconductor.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"34 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143889460","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Anatomy of internal electric field profile in operating SiC power MOSFETs with local contact potential probing 局部接触电位探测工作SiC功率mosfet内部电场分布的解剖

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-29 DOI: 10.1063/5.0259120

Mingsheng Fang, Yan Liu, Ting Zhang, Dandan Wang, Zhihong Mai, Guozhong Xing

{"title":"Anatomy of internal electric field profile in operating SiC power MOSFETs with local contact potential probing","authors":"Mingsheng Fang, Yan Liu, Ting Zhang, Dandan Wang, Zhihong Mai, Guozhong Xing","doi":"10.1063/5.0259120","DOIUrl":"https://doi.org/10.1063/5.0259120","url":null,"abstract":"A comprehensive understanding of local contact potential profiles and carrier transport mechanisms in SiC MOSFETs is crucial for optimizing device design and performance. We report the evolution of local contact potential across the cross section of 1200 V SiC MOSFETs under applied external bias using Kelvin probe force microscopy. In the vertical direction of the cross section, notable features in the relative contact potential difference (RCPD) are identified at the interfaces of the P well and N− drift layer, as well as between the N− drift layer and the N+ substrate. The RCPD drop-out values at the P well to N− drift layer interface increase from 0.17 to 1.54 V and then to 2.94 V as the external voltage is adjusted, with corresponding values of 2.43 and 3.86 V observed at VGS = VDS of 2 and 4 V, respectively. Conversely, the RCPD drop values at the N− drift layer to N+ substrate interface fluctuate between −0.38 and 0.74 V. In the horizontal direction of the cross section, as VGS = VDS increases from 0 to 4 V, the RCPD drop-out values change from 0.14 to 1.33 V, and ultimately reach 2.41 V. These variations are indicative of enhanced energy band bending at the P–N junction due to charge injection, revealing key insights into the electric field distribution within the device. This study elucidates the local contact potential profile evolution in SiC MOSFETs and highlights intrinsic electrical properties essential for advancing SiC-based power devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"19 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143889456","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Spin-dependent plasmons excitation in Fe layer on W(110) and their decay via electron emission W（110）上Fe层中自旋相关等离子体激元的激发及其电子发射衰变

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-29 DOI: 10.1063/5.0265733

Sergey N. Samarin, Oleg M. Artamonov, Alexander P. Baraban, James F. Williams

引用次数: 0

High-sensitivity GaN UV photodetector integrated with graphene 集成石墨烯的高灵敏度GaN紫外光电探测器

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-29 DOI: 10.1063/5.0260828

Jing Wang, Hanxue Jiao, Xudong Wang, Fuhao Liu, Zhaobiao Diao, Menglin Liu, Wenxin Li, Ling Wang, Yan Chen, Tie Lin, Hong Shen, Xiangjian Meng, Xiangyang Li, Junhao Chu, Jianlu Wang

{"title":"High-sensitivity GaN UV photodetector integrated with graphene","authors":"Jing Wang, Hanxue Jiao, Xudong Wang, Fuhao Liu, Zhaobiao Diao, Menglin Liu, Wenxin Li, Ling Wang, Yan Chen, Tie Lin, Hong Shen, Xiangjian Meng, Xiangyang Li, Junhao Chu, Jianlu Wang","doi":"10.1063/5.0260828","DOIUrl":"https://doi.org/10.1063/5.0260828","url":null,"abstract":"Ultraviolet (UV) photodetectors are critical for a wide range of applications, where high sensitivity and low dark current are essential for accurate detection. This study presents a graphene-based p-i-n UV photodetector with a Gr/i-GaN/n-GaN structure, aimed at improving UV detection performance by improving sensitivity and reducing dark current. Graphene, as a p-type material, enhances carrier mobility and reduces recombination, while leveraging the wide bandgap properties of i-GaN and n-GaN for efficient UV absorption. The experimental results show that the graphene/i-GaN/n-GaN photodetector achieves a maximum photoresponsivity of 20.6 A/W, detectivity of 2.0 × 1012 cm·Hz1/2·W−1, and external quantum efficiency of 75.25%, indicating efficient light-to-current conversion performance. The integration of graphene in the p-i-n structure significantly reduces the dark current to 2.68 × 10−13 A, improving both the transient response and the overall efficiency of the device. These findings underscore the effectiveness of the graphene/i-GaN/n-GaN structure in improving UV photodetection performance. By combining the high mobility of graphene and the wide bandgap properties of GaN, this work demonstrates potential for application in graphene-based p-i-n photodetectors as a viable approach for future UV sensing applications, offering enhanced performance and stability for precise UV detection across varying conditions.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"11 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143889461","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Chip-scale self-referenced thermometer based on cascaded ring resonators 基于级联环形谐振器的芯片级自参考温度计

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-29 DOI: 10.1063/5.0259906

Xiantao Zhu, Minmin You, Zude Lin, Xiuyan Li, Bin Yang, Jingquan Liu

{"title":"Chip-scale self-referenced thermometer based on cascaded ring resonators","authors":"Xiantao Zhu, Minmin You, Zude Lin, Xiuyan Li, Bin Yang, Jingquan Liu","doi":"10.1063/5.0259906","DOIUrl":"https://doi.org/10.1063/5.0259906","url":null,"abstract":"In this paper, we proposed a self-referenced temperature sensor with ultra-high stability based on a silicon cascaded microring resonator (CMRR) comprising a reference ring coated with titanium oxide (TiO2) and a sensing ring. By exploiting the negative thermo-optic coefficient (TOC) of the TiO2 to counterbalance the positive TOC of Si, the temperature sensitivity of the reference ring was greatly reduced to 4.53 pm/K, while the sensing ring is 75.06 pm/K. As a result, the sensitivity of the CMRR is 70.53 pm/K utilizing the differential sensing method. It is of particular significance that this sensing scheme mitigates the impact of external noises such as laser fluctuations and self-heating noises, enabling the development of a highly stable on-chip temperature sensing device. By immersing the sensor in the triple point of water system with ultra-high stability, the device performs a temperature fluctuation of 15.88 mK, which is an improvement of more than an order of magnitude over microring resonator temperature sensors. Further analysis indicates that the noise derived from the self-heating effects of the device is about 13.76 mK, which represents the primary noise source in CMRR stability. This work manifests that the CMRR can serve as a paradigm for precise temperature monitoring.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"152 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143889674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Time-resolved measurements of cumulative effects in gas dynamics induced by high-repetition-rate femtosecond laser filamentation 高重复率飞秒激光成丝引起的气体动力学累积效应的时间分辨测量

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-29 DOI: 10.1063/5.0258907

Robin Löscher, Malte C. Schroeder, Alan Omar, Clara J. Saraceno

引用次数: 0