Applied Physics Letters最新文献_第9页

NiCo alloys with optimized electronic structure for ultralow overpotential alkaline hydrogen evolution 电子结构优化的超低过电位碱性析氢镍合金

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-03-30 DOI: 10.1063/5.0320075

Mingjuan Zhang, Xiaotong Mao, Lijie Zhu, Hongzhan Chen, Fangyan Xie, Jian Chen, Wenyu Huang, Nan Wang, Yanshuo Jin, Hui Meng

{"title":"NiCo alloys with optimized electronic structure for ultralow overpotential alkaline hydrogen evolution","authors":"Mingjuan Zhang, Xiaotong Mao, Lijie Zhu, Hongzhan Chen, Fangyan Xie, Jian Chen, Wenyu Huang, Nan Wang, Yanshuo Jin, Hui Meng","doi":"10.1063/5.0320075","DOIUrl":"https://doi.org/10.1063/5.0320075","url":null,"abstract":"Modulating the electronic structure of alloy catalysts is a pivotal strategy for enhancing their intrinsic hydrogen evolution reaction (HER) performance. This work demonstrates that incorporating cobalt into nickel can effectively modulate the electronic structure of nickel while leveraging the excellent lattice matching between Ni and Co to maintain alloy structural integrity, thereby simultaneously enhancing intrinsic HER activity and endowing the catalyst with superior structural stability. The optimized Co1Ni1/C catalyst exhibits an ultralow overpotential of 21.2 mV at 10 mA cm−2, which not only surpasses that of most reported NiCo alloys but also approaches the level of NiMo alloys, while effectively avoiding the common metal leaching issues associated with NiMo alloys. Systematic characterization using X-ray photoelectron spectroscopy and electron paramagnetic resonance proved that cobalt doping induces electron transfer from Ni to Co, raising the d-band center of Ni and increasing unpaired electron density. These electronic reconfigurations strengthen water adsorption at nickel active sites, thereby accelerating the water dissociation kinetics. The catalyst also exhibits superior stability with minimal performance decay during prolonged operation. The catalyst also demonstrates excellent stability with minimal performance degradation during prolonged operation, outperforming conventional NiMo alloys.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"46 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-03-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147578073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

AlxGa1 − xN (0.7 < x < 1) Schottky diodes using distributed polarization doped layer with a current density of 14 kA/cm2 AlxGa1−xN （0.7 < x < 1）肖特基二极管采用分布极化掺杂层，电流密度为14 kA/cm2

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-03-30 DOI: 10.1063/5.0325830

Tariq Jamil, Abdullah Al Mamun Mazumder, Mafruda Rahman, Muhammad Ali, Grigory Simin, Asif Khan

引用次数: 0

Thermal transport in ultra-drawn polyethylene films 超拉伸聚乙烯薄膜中的热输运

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-03-30 DOI: 10.1063/5.0320072

Haoran Zhang, Yanhui Zhang, Yuhang Guo, Rui Xu, Qijun Zheng, Minsu Liu, Hong Wu, Jianli Wang

引用次数: 0

Optimal contact design for joule-heated systems 焦耳加热系统的最佳接触设计

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-03-30 DOI: 10.1063/5.0313180

C. Cremers, C. Wan, J. A. Fan

引用次数: 0

Mechanism for enhancing the power conversion efficiency of Cu2ZnSn(S,Se)4 solar cells via MgF2 anti-reflection coating deposition MgF2增透涂层沉积提高Cu2ZnSn(S,Se)4太阳能电池功率转换效率的机理

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-03-30 DOI: 10.1063/5.0321598

Ding Ma, Junyan Li, Bin Yao, Yongfeng Li, Zhanhui Ding, Yuhong Jiang

{"title":"Mechanism for enhancing the power conversion efficiency of Cu2ZnSn(S,Se)4 solar cells via MgF2 anti-reflection coating deposition","authors":"Ding Ma, Junyan Li, Bin Yao, Yongfeng Li, Zhanhui Ding, Yuhong Jiang","doi":"10.1063/5.0321598","DOIUrl":"https://doi.org/10.1063/5.0321598","url":null,"abstract":"In this study, MgF2 anti-reflection coatings (ARCs) with different thicknesses were deposited on the surface of Indium Tin Oxide (ITO) located between Ag electrodes of a CZTSSe solar cell by vacuum evaporation deposition. The thickness of the MgF2 ARC was controlled by varying its weight in the range of 0.01–0.04 g of MgF2. By optimizing the weight, the power conversion efficiency (PCE) of the CZTSSe solar cell increased from 10.40% without MgF2 ARC to 12.21% with MgF2 ARC produced with 0.02 g of MgF2. It was found that the increased PCE stems not only from an increase in short-circuit current density (JSC) but also from fill factor (FF). This is different from the previously reported literature results, where the increased PCE was usually attributed to an enhancement in JSC. By calculating the percentage contribution of photogenerated current density (JL) and electrical parameters to JSC and FF, it was demonstrated that the increased JSC is mainly attributed to an increase in JL, and the increased FF is attributed to a decrease in series resistance (Rs), reverse saturation current density (J0), and ideality factor of diode (A). The increase in JL results from the reduction of incident light loss by the anti-reflection effect of MgF2, the decrease in Rs from a decrease in resistivity of ITO caused by diffusion of F from MgF2 into ITO, and the decrease in A and J0 from a slight increase in carrier recombination due to Mg diffusion into ITO and a significant reduction in interfacial recombination because the device was annealed during thermal evaporation of MgF2.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"408 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-03-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147578035","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Mechanism of point-defect-driven evolution in ferroelectricity of AlScN films AlScN薄膜铁电演化的点缺陷驱动机制

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-03-30 DOI: 10.1063/5.0316749

Yongsong Zhao, Decun Shi, Dayu Zhou, Bin Zhang, Xufeng Wu, Yi Tong, Xinpeng Wang, Jingyi Xiao

引用次数: 0

Strongly polarized metal telluride with slight metal precipitation enables excellent long-wave infrared transparent conductive properties 具有轻微金属沉淀的强极化金属碲化物具有优异的长波红外透明导电性能

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-03-30 DOI: 10.1063/5.0317508

Siyu Yu, Can Cui, Yuyang Zhang, Danian Wang, Yuhan Feng, Le Zhao, Haibo Wang, Zicheng Song, Chaoquan Hu

{"title":"Strongly polarized metal telluride with slight metal precipitation enables excellent long-wave infrared transparent conductive properties","authors":"Siyu Yu, Can Cui, Yuyang Zhang, Danian Wang, Yuhan Feng, Le Zhao, Haibo Wang, Zicheng Song, Chaoquan Hu","doi":"10.1063/5.0317508","DOIUrl":"https://doi.org/10.1063/5.0317508","url":null,"abstract":"Long-wave infrared transparent conductive films (LITCFs) are crucial for next-generation infrared optoelectronic devices. However, the development of high-performance LITCFs is extremely challenging due to the simultaneous occurrence of charge carrier transport and carrier absorption. To address this problem, we propose a composite design strategy: a strongly polarized metal compound as the transparent matrix phase and a small amount of precipitated metal as the conductivity-enhancing phase. As a proof of concept, we fabricated WTe0.98 films, which possess coexisting WTe2 and a small amount of W phases. Compared with the conventional transparent conductive film ITO (1373.6 S/cm, 27.94%), WTe0.98 demonstrates not only a higher electrical conductivity (1992.0 S/cm) but also a significantly higher long-wave infrared (LWIR) transmittance (67.44%). We find that the high LWIR transmittance of WTe0.98 originates from the high optical dielectric constant of the WTe2 phase. This high dielectric constant is a result of the enhanced electronic polarizability from the strong p–d hybridized interlayer bonding. The high electrical conductivity of WTe0.98 stems from the high carrier concentration provided by the W phase. Therefore, this study solves the bottleneck problem of coordinating conductivity and LWIR transparency through the design of strongly polarized composite materials with a precipitated metal phase.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"30 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-03-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147578074","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Direct characterization of arbitrary multi-particle states with ancilla-only measurements 用辅助测量直接表征任意多粒子态

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-03-30 DOI: 10.1063/5.0302536

Zhiyuan Wang, Zijing Zhang

{"title":"Direct characterization of arbitrary multi-particle states with ancilla-only measurements","authors":"Zhiyuan Wang, Zijing Zhang","doi":"10.1063/5.0302536","DOIUrl":"https://doi.org/10.1063/5.0302536","url":null,"abstract":"The measurement of unknown quantum states is crucial in quantum information science. Standard quantum state tomography can retrieve information regarding unknown quantum states. However, as the number of qubits increases, the measurement basis required for standard tomography increases exponentially. When we are only interested in partial information of the quantum state, such as coherence and entanglement, global state reconstruction is not necessary. Therefore, direct characterization schemes are required to obtain the information of interest without complete state tomography. In this Letter, we present a circuit scheme with ancilla-only measurements for the direct characterization of multi-particle states that requires only four projection probabilities, independent of the system size. Ancilla-only measurements refer to a strategy where all readouts are on ancillas, never directly on the target qubits. Target state information is indirectly extracted via target–ancilla coupling. Moreover, our scheme can automatically reset the target qubits, thereby providing an immediately available quantum register for subsequent tasks and avoiding the target quantum system initialization required for the next task. Finally, numerical simulations and experimental verification were performed on a quantum cloud platform, confirming the validity of the theoretical scheme.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"275 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-03-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147578028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ultraflexible and stretchable multifunctional synaptic memristor by molecular layer deposition 分子层沉积的超柔性可拉伸多功能突触忆阻器

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-03-30 DOI: 10.1063/5.0304145

Ying-Jie Ma, Song Sun, Yue Huang, Shuai Zhang, Li-Ling Fu, Xin-Xin Wang, Zi-Qiang Yang, Jin-Yang Wei, Di Wu, Ai-Dong Li

{"title":"Ultraflexible and stretchable multifunctional synaptic memristor by molecular layer deposition","authors":"Ying-Jie Ma, Song Sun, Yue Huang, Shuai Zhang, Li-Ling Fu, Xin-Xin Wang, Zi-Qiang Yang, Jin-Yang Wei, Di Wu, Ai-Dong Li","doi":"10.1063/5.0304145","DOIUrl":"https://doi.org/10.1063/5.0304145","url":null,"abstract":"Stretchable memristors are anticipated to be pivotal in the development of next-generation wearable and implantable electronic devices. However, the challenging fabrication requirements and restricted functionality have impeded progress in this field. In this Letter, ultraflexible and stretchable PDMS/Au/Ti-HQ/Al-HQ/Ag (denoted as ATP) memristor is fabricated using a pre-stretch–release process and molecular layer deposition. The ATP memristor exhibits stable bipolar resistive switching behavior at a curvature radius of 0.1 mm or under a 15% strain. The device features low switching voltages (VSET = 0.93 V and VRESET = −0.65 V), long-term retention performance (up to 104 s), stable endurance (up to 3000 cycles), and excellent multilevel conductance states. As an artificial synapse, it can simulate various important synaptic behaviors, such as long-term potentiation/depression, paired-pulse facilitation/depression, and spike time-dependent plasticity. Furthermore, basic logic and arithmetic operations have been realized using the ATP memristor, and parity checkers and encryption matrix systems have been constructed to ensure the accuracy and security of data transmission. Additionally, the ATP memristor-based deep convolutional neural network provides high accuracy and speed in image recognition tasks, achieving an 92% accuracy rate after training for 30 epochs. This cross-disciplinary research into memristor technology covers flexible electronics, digital circuits, information security, and brain-inspired computing, laying the groundwork for the next generation of high-performance, low-power artificial intelligence systems.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"77 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-03-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147578029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Vertical diodes on n-type β-Ga2O3 using p-Cu2O for heterojunction formation and edge termination 利用p-Cu2O在n型β-Ga2O3上形成异质结并终止边

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-03-30 DOI: 10.1063/5.0320766

Prabhat Prajapati, Sai Hardhik Karanam, Pooja Sharma, Saurabh Lodha

{"title":"Vertical diodes on n-type β-Ga2O3 using p-Cu2O for heterojunction formation and edge termination","authors":"Prabhat Prajapati, Sai Hardhik Karanam, Pooja Sharma, Saurabh Lodha","doi":"10.1063/5.0320766","DOIUrl":"https://doi.org/10.1063/5.0320766","url":null,"abstract":"Lack of viable p-type doping in ultra-wide bandgap β-Ga2O3 necessitates the use of p-type materials to form p–n heterojunction diodes (HJDs). This study demonstrates a comparative electrical performance analysis of vertical heterojunction devices using p-type Cu2O layers such as junction termination extension-Schottky barrier diodes (JTE-SBDs), p–n HJDs, and junction barrier Schottky diodes (JBSDs), along with control SBDs and SiO2 field plate (FP) SBDs. Through electrical characterization and TCAD simulations, we show that the JTE-SBD gives the best performance parameters with a 2.5× increase in breakdown voltage (Vbr = 656 V) with nearly matched differential specific on-resistance (Ron,sp = 1.73 mΩ cm2) compared to the control SBD due to improved edge electric field management, better than the FP-SBD and the JBSD, and without Ron,sp degradation observed in series resistance-limited HJD devices. The JTE-SBD demonstrates a Baliga's figure of merit of 0.24 GW/cm2. The near-unity ideality factors and low turn-on voltages of the p-Cu2O-based diodes further underscore its potential for enhancing β-Ga2O3 high-power diode performance, such as through effective edge electric field management shown through the JTE-SBDs in this work.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"1 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-03-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147578026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0