Applied Physics Letters最新文献_第9页

Multi-functional terahertz nano-metasurface for beam-splitting and nonlinear resonance frequency shifting 用于分束和非线性共振移频的多功能太赫兹纳米超表面

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-01-15 DOI: 10.1063/5.0252621

Jianghao Li, Jiahua Cai, Chunyan Geng, Deyin Kong, Mingxuan Zhang, Baogang Quan, Xianxun Yao, Guolin Sun, Xiaojun Wu

{"title":"Multi-functional terahertz nano-metasurface for beam-splitting and nonlinear resonance frequency shifting","authors":"Jianghao Li, Jiahua Cai, Chunyan Geng, Deyin Kong, Mingxuan Zhang, Baogang Quan, Xianxun Yao, Guolin Sun, Xiaojun Wu","doi":"10.1063/5.0252621","DOIUrl":"https://doi.org/10.1063/5.0252621","url":null,"abstract":"The emergence of terahertz (THz) nanoscale resonance metasurface devices represents an innovative method for modulating THz waves by utilizing the intense, high-frequency alternating electric field in THz radiation. However, compared to traditional modulation methods that employ electrical, optical, and other techniques, the potential of these devices still necessitates further exploration. In this work, we achieved THz beam-splitting and field-induced nonlinear frequency shifting functions within a single THz nano-metasurface device. The device consists of single split-ring resonators (s-SRRs) with a nanogap on GaAs substrate. The pattern design based on the Pancharatnam–Berry (P-B) phase principle can split the incident wave into three beams. Meanwhile, its frequency shifting capability, which varies with the E-field, has been thoroughly investigated. The device performance was experimentally evaluated by an angle-resolved THz time-domain spectroscopy (THz-TDS) system and a strong-field THz-TDS system. This device could serve as a promising research platform for integrating THz with nano-optics and holds the potential for ultrafast modulation, offering application prospects in radar, wireless communication, and electromagnetic protection.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"18 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142985986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Origin of oxygen partial pressure-dependent conductivity in SrTiO3 氧化钛酸锶中氧分压相关电导率的起源

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-01-15 DOI: 10.1063/5.0245820

Zenghua Cai, Chunlan Ma

{"title":"Origin of oxygen partial pressure-dependent conductivity in SrTiO3","authors":"Zenghua Cai, Chunlan Ma","doi":"10.1063/5.0245820","DOIUrl":"https://doi.org/10.1063/5.0245820","url":null,"abstract":"SrTiO3 (STO) displays a broad spectrum of physical properties, including superconductivity, ferroelectricity, and photoconductivity, making it a standout semiconductor material. Despite extensive research, the oxygen partial pressure-dependent conductivity in STO has remained elusive. This study leverages first-principles calculations and systematically investigates the intrinsic defect properties of STO. The results reveal that VO, VSr, and TiSr are the dominant intrinsic defects, influencing STO's conductivity under varying O chemical potentials (oxygen partial pressures). Under O-poor condition, VO is the predominant donor, while VSr is the main acceptor. As the oxygen pressure increases, TiSr emerges as a critical donor defect under O-rich conditions, significantly affecting the conductivity. Additionally, the study elucidates the abnormal phenomenon where VTi, typically an acceptor, exhibits donor-like behavior due to the formation of O-trimer. This work offers a comprehensive understanding of how intrinsic defects tune the Fermi level, thereby altering STO's conductivity from metallic to n-type and eventually to p-type across different O chemical potentials. These insights resolve the long-standing issue of oxygen partial pressure-dependent conductivity and explain the observed metallic conductivity in oxygen-deficient STO.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"18 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142986345","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Shared-aperture full-duplex Janus meta-lens for asymmetric focusing of electromagnetic waves 用于电磁波非对称聚焦的共享孔径全双工Janus超透镜

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-01-15 DOI: 10.1063/5.0242609

Shufang Dong, Kai Qu, Shaojie Wang, Junming Zhao, Ke Chen, Yijun Feng

引用次数: 0

High mobility crystallized stacked-channel thin-film transistors induced by low-temperature thermal annealing 低温热退火诱导的高迁移率结晶叠层薄膜晶体管

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-01-15 DOI: 10.1063/5.0250886

Pan Wen, Cong Peng, Xingwei Ding, Fa-Hsyang Chen, Guowen Yan, Lin Xu, Junfeng Li, Xifeng Li, Jianhua Zhang

{"title":"High mobility crystallized stacked-channel thin-film transistors induced by low-temperature thermal annealing","authors":"Pan Wen, Cong Peng, Xingwei Ding, Fa-Hsyang Chen, Guowen Yan, Lin Xu, Junfeng Li, Xifeng Li, Jianhua Zhang","doi":"10.1063/5.0250886","DOIUrl":"https://doi.org/10.1063/5.0250886","url":null,"abstract":"A high mobility crystallized stacked-channel thin-film transistor (TFT) was fabricated and characterized. The stacked IGO/IGZO channel film consisting of an In-rich IGO layer and a conventional IGZO layer was fabricated by atomic layer deposition technology, where the upper layer of amorphous IGZO is induced into nanocrystals by the lower layer of preferentially oriented polycrystalline IGO during thermal annealing at a low temperature of 300 °C. The preferential growth of nanocrystalline IGZO with matched crystal structure in the channel favors the transport of electrons. In addition, the accumulation of a large number of electrons at the heterojunction due to energy band bending provides a strong guarantee for high mobility. The crystallized stacked IGO/IGZO TFT exhibits a superior field effect mobility of 95.7 cm2 V−1 s−1, which is 55.9% higher than that of single-layer IGO TFT. At the same time, the stability of the device was also dramatically improved. The proposed strategy is a simple and promising approach to prepare high performance TFTs for future display and semiconductor applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"74 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142985985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Development of L10-ordered FePt with low damping and large perpendicular magnetic anisotropy by engineering the nanostructure 通过工程化纳米结构开发低阻尼、大垂直磁各向异性的l10有序FePt

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-01-14 DOI: 10.1063/5.0246369

P. D. Bentley, Y. Sasaki, I. Suzuki, S. Isogami, Y. K. Takahashi, H. Suto

{"title":"Development of L10-ordered FePt with low damping and large perpendicular magnetic anisotropy by engineering the nanostructure","authors":"P. D. Bentley, Y. Sasaki, I. Suzuki, S. Isogami, Y. K. Takahashi, H. Suto","doi":"10.1063/5.0246369","DOIUrl":"https://doi.org/10.1063/5.0246369","url":null,"abstract":"THz spintronics is an emergent area of research aimed at bridging the gap between fifth- and sixth-generation wireless telecommunications by utilizing spintronic devices such as magnetic spin torque oscillators as a source of low powered THz emission. The realization of such devices using ferromagnetic metal thin films however requires magnetic materials with both large perpendicular magnetic anisotropy (PMA) and low Gilbert damping constants. In this Letter, we report on the development of L10-ordered FePt with an effective Gilbert damping constant as low as 0.033. Using time-resolved magneto-optical Kerr effect, we characterized the magnetization dynamics of continuous L10-ordered FePt grown on MgO and SrTiO3 substrates. By changing the substrate on which FePt is grown, the lattice mismatch and subsequent number of misfit dislocations at the interface and L10-ordering can be controlled. We found that fewer misfits and improved ordering in FePt lead to a reduced Gilbert damping constant due to reduced electron scattering but that FePt grown on SrTiO3 also shows robust perpendicular magnetic anisotropy. Importantly, these results demonstrate the ability to control the damping in FePt and similar materials by changing the number of misfit dislocations at the interface and the smaller damping in FePt opens up the possibility of using this material in spintronic materials in the THz wave range.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"12 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-01-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142975389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Geometric effects in the measurement of the remanent ferroelectric polarization at the nanoscale 纳米尺度下残余铁电极化测量中的几何效应

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-01-14 DOI: 10.1063/5.0246657

Tony Chiang, Megan K. Lenox, Tao Ma, Jon F. Ihlefeld, John T. Heron

{"title":"Geometric effects in the measurement of the remanent ferroelectric polarization at the nanoscale","authors":"Tony Chiang, Megan K. Lenox, Tao Ma, Jon F. Ihlefeld, John T. Heron","doi":"10.1063/5.0246657","DOIUrl":"https://doi.org/10.1063/5.0246657","url":null,"abstract":"A resurgence of research on ferroelectric materials has recently occurred due to their potential to enhance the performance of memory and logic. For the design and commercialization of such technologies, it is important to understand the physical behavior of ferroelectrics and the interplay with device size, geometry, and fabrication processes. Here, we report a study of geometric factors that can influence the measurement of the remanent ferroelectric polarization, an important measurement for understanding wakeup, retention, and endurance in ferroelectric technologies. The areal size scaling of W/Hf0.5Zr0.5O2/W capacitors is compared in two typical structures: an island top electrode with a continuous ferroelectric layer and an island top electrode/ferroelectric layer (etched ferroelectric layer). Error in the evaluation of the switched area leads to anomalous scaling trends and increasing apparent remanent polarization as capacitor sizes decrease, most strongly in continuous ferroelectric layer capacitors. Using TEM and electric field simulations, this is attributed to two effects: a processing artifact from ion milling that creates a foot on the top electrode and a fringe electric field penetrating outside of the capacitor area. With the correction of the switching area, the 2Pr for both samples agree (∼32 μC cm−2) and is invariant in the capacitor sizes used (down to 400 nm diameter). Our work demonstrates that the determination of the actual capacitor structure and local electric field is needed to evaluate the intrinsic ferroelectric behavior at the nanoscale.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"4 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-01-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142975301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Lubrication for macroscopic friction pairs with single-layer graphene coating 用单层石墨烯涂层润滑宏观摩擦副

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-01-14 DOI: 10.1063/5.0242763

Qi Yang, Qiancheng Ren, Jiayuan Fang, Shuyue Wu, Fangqian Han, Pei Zhao

引用次数: 0

Efficient optical trapping force tuning for cusp-catastrophe autofocusing beams using deep neural networks 利用深度神经网络对尖顶-灾难自动聚焦光束进行高效光学捕获力调整

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-01-14 DOI: 10.1063/5.0241264

Xiaofang Lu, Peiyu Zhang, Haixia Wu, Jiahao Yu, Ping Chen, Bingsuo Zou, Peilong Hong, Yu-Xuan Ren, Yi Liang

{"title":"Efficient optical trapping force tuning for cusp-catastrophe autofocusing beams using deep neural networks","authors":"Xiaofang Lu, Peiyu Zhang, Haixia Wu, Jiahao Yu, Ping Chen, Bingsuo Zou, Peilong Hong, Yu-Xuan Ren, Yi Liang","doi":"10.1063/5.0241264","DOIUrl":"https://doi.org/10.1063/5.0241264","url":null,"abstract":"Structured light adjusts optical trapping forces through flexible structure design. However, it is challenging to evaluate optical forces on microscopic particles in structured light due to high computational hardware requirements, prolonged computation times, and data inefficiencies associated with solving optical trapping forces using generalized Lorenz–Mie theory. We propose the use of deep neural networks for predicting and tuning the optical trapping force of cusp-catastrophe autofocusing beams on Mie particles. Inputs include beam's structural parameters, laser power, and the size of captured particle, while the output is the optical trapping force. Following iterative training, the neural network achieved a mean square error of 1.5×10−5. Evaluation using 150 sets of test data revealed that 95.3% of the predictions had a relative error of less than 1.8%, indicating a high prediction accuracy. In contrast to traditional computational methods, the neural network model demonstrates a remarkable efficiency improvement—104 times faster in optimizing beams for optical trapping. This advancement demonstrates the advantage of deep learning neural networks for the application of structured light including autofocusing beams in optical tweezers.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"7 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-01-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142981208","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Low voltage and high bandwidth surface-illuminated three-terminal Ge-on-Si APD with multiple biasing configurations 具有多种偏置结构的低电压高带宽表面照明三端锗硅APD

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-01-14 DOI: 10.1063/5.0239942

Huan Qu, Xuetong Li, Xiaobin Liu, Weipeng Wang, Yingzhi Li, Baisong Chen, Heming Hu, Zihao Zhi, Ziming Wang, Jie Li, Guoqiang Lo, Lei Wang, Quanxin Na, Xueyan Li, Xiaolong Hu, Qijie Xie, Junfeng Song

引用次数: 0

The band structure and carrier recombination mechanism of α/β-phase tellurium homojunction investigated by infrared photoluminescence 红外光致发光研究了α/β相碲同结的能带结构和载流子复合机理

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-01-14 DOI: 10.1063/5.0245121

Xiaoyun Ye, Liangqing Zhu, Jun Shao, Rui Hu, Liyan Shang, Xiren Chen, Yawei Li, Jinzhong Zhang, Kai Jiang, Junhao Chu, Zhigao Hu

{"title":"The band structure and carrier recombination mechanism of α/β-phase tellurium homojunction investigated by infrared photoluminescence","authors":"Xiaoyun Ye, Liangqing Zhu, Jun Shao, Rui Hu, Liyan Shang, Xiren Chen, Yawei Li, Jinzhong Zhang, Kai Jiang, Junhao Chu, Zhigao Hu","doi":"10.1063/5.0245121","DOIUrl":"https://doi.org/10.1063/5.0245121","url":null,"abstract":"During the synthesis of tellurium (Te) crystals, the coexistence of multiple crystalline phases (α-Te, β-Te, and γ-Te) with diverse structures commonly occurs, leading to instability and complexity in the performance of Te-based optoelectronic devices. This study employs physical vapor deposition to synthesize Te crystals of various sizes and morphologies, followed by spatially and temperature-dependent evaluation using Raman mapping and infrared photoluminescence (PL) spectroscopy. Spatially resolved results reveal that the size and morphology of Te crystals significantly influence the energy and peak profiles of Raman and PL spectra. Statistical analysis of spatially random sampling indicates the PL peak energies of Te crystals follow a lognormal distribution in terms of their occurrence frequencies, reflecting the complex interplay of multiple factors during crystal growth. This results in the coexistence of α-Te and β-Te phases, forming α/β-Te heterophase homojunction (HPHJ). Meanwhile, temperature-dependent PL results, obtained for the range of 3–290 K, reveal multi-peak competitive behavior in the PL spectra, accompanied by S-shaped shifts in peak energy. These features can be rationally explained by an interface transition-recombination mechanism based on the I-type α/β-Te HPHJ model. It also confirms infrared PL spectroscopy is an effective method for identifying the crystalline phase composition of Te crystals.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"23 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-01-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142975387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0