Applied Physics Letters最新文献_第9页

Thin-plate stress monitoring using S1-ZGV mode based on a PVDF comb transducer 基于PVDF梳状传感器的S1-ZGV模式薄板应力监测

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-09-29 DOI: 10.1063/5.0297746

Xiangdi Meng, Caibin Xu, Weibin Li, Shuai Guo, Jiaxiang Wang, Mingxi Deng

{"title":"Thin-plate stress monitoring using S1-ZGV mode based on a PVDF comb transducer","authors":"Xiangdi Meng, Caibin Xu, Weibin Li, Shuai Guo, Jiaxiang Wang, Mingxi Deng","doi":"10.1063/5.0297746","DOIUrl":"https://doi.org/10.1063/5.0297746","url":null,"abstract":"This Letter proposes an ultrasonic stress monitoring method utilizing the S1 zero group velocity (S1-ZGV) mode based on a PVDF comb transducer. Experimental investigations have revealed that under varying uniaxial stress conditions, both the measured S1-ZGV frequency and its corresponding amplitude exhibit appreciable variations. By adopting the relative change rate of the amplitude corresponding to the S1-ZGV frequency (denoted by RCA) as the characteristic parameter, it is evident that RCA demonstrates a monotonic and highly sensitive response to the applied uniaxial stress. Notably, RCA exhibits a significant increase as the applied uniaxial stress rises. This characteristic enables the use of RCA to predict the stress state, facilitating real-time stress monitoring. Experimental validation indicates that the predicted stress values align closely with the actual applied stress values, demonstrating a high level of accuracy in stress prediction. This method enables real-time and in situ monitoring of the stress state in thin plates subjected to uniaxial stresses, which holds paramount importance for a wide array of industrial applications in structural health monitoring.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"31 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145189503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Large magnetic Bragg peak enhancement by ultrasound injection on FeTiO3 超声注入FeTiO3的大磁Bragg峰增强

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-09-29 DOI: 10.1063/5.0273424

Shin-ichi Shamoto, Kwangwoo Shin, Mitsuhiro Akatsu, Masaki Imai, Daichi Ueta, Tetsuya R. Yokoo, Yuichi Nemoto, Amer M. A. Hassan, Lieh-Jeng Chang, Jun'ichi Ieda, Jae-Ho Chung

引用次数: 0

Experimental evidence of impurity-induced selective short-mean-free-path phonon scatterings in β-Ga2O3 β-Ga2O3中杂质诱导的选择性短平均自由程声子散射的实验证据

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-09-29 DOI: 10.1063/5.0293469

Hongcai Li, Enrui Zhang, Shijie Duan, Shuai Wu, Liang Zhong, Haoran Chen, Yan Li, Dongdong Kang, Bo Chen, Xiaoxiang Yu, Jiayu Dai

{"title":"Experimental evidence of impurity-induced selective short-mean-free-path phonon scatterings in β-Ga2O3","authors":"Hongcai Li, Enrui Zhang, Shijie Duan, Shuai Wu, Liang Zhong, Haoran Chen, Yan Li, Dongdong Kang, Bo Chen, Xiaoxiang Yu, Jiayu Dai","doi":"10.1063/5.0293469","DOIUrl":"https://doi.org/10.1063/5.0293469","url":null,"abstract":"Understanding the phonon–impurity interactions is essential to modulate and evaluate the lattice thermal conductivity (LTC) of materials for heat dissipation and thermoelectric conversion. The phonon–impurity scattering theorem has been established for several decades and argues a primary effect on phonons with high frequency or short mean free path (MFP). However, all measurements of crystals with impurity so far have indicated a controversial full-MFP-range suppression of phonon contribution to LTC. Here, by employing an improved frequency-domain thermoreflectance method with ultrahigh heating frequency reaching 200 MHz, we measured the LTC of a promising ultrawide-bandgap semiconductor β-Ga2O3 and its phonon MFP spectra down to about 50 nm and reported an impurity-induced selective reduction of spectral contribution of phonons with MFPs shorter than about 500 nm. This work uses an improved thermoreflectance method with ultrahigh heating frequency as an effective approach to probe the phonon physics, provides fundamental experimental evidence for selective interactions between impurity and high-frequency phonons, and will guide the material design for desired thermal transport performance.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"19 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145188995","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Excitatory and inhibitory optical neuron implementation using lasing wavelength switching in edge-coupled InAs/InGaAs/GaAs quantum dot lasers 边缘耦合InAs/InGaAs/GaAs量子点激光器中激光波长开关实现兴奋性和抑制性光神经元

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-09-29 DOI: 10.1063/5.0292377

Mikhail Maximov, Yuri Shernyakov, Grigoriy Kornyshov, Artem Beckman, Anton Kharchenko, Nikita Gordeev, Olga Simchuk, Vladimir Dubrovskii, Alexandr Vorobyev, Fedor Zubov

引用次数: 0

Magnetic exchange interactions in room-temperature altermagnet KV2Se2O 室温交变磁体KV2Se2O中的磁交换相互作用

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-09-29 DOI: 10.1063/5.0285878

Jibin Li, Wangjiong Li, Yunzhen Hu, Xinhao Guo, Mingyi Chen, Shuwei Li, Xinman Chen, Shuxiang Wu

{"title":"Magnetic exchange interactions in room-temperature altermagnet KV2Se2O","authors":"Jibin Li, Wangjiong Li, Yunzhen Hu, Xinhao Guo, Mingyi Chen, Shuwei Li, Xinman Chen, Shuxiang Wu","doi":"10.1063/5.0285878","DOIUrl":"https://doi.org/10.1063/5.0285878","url":null,"abstract":"Altermagnets unify the merits of ferromagnets (strong magneto responses) and antiferromagnets (zero stray fields), demonstrating time-reversal symmetry breaking, intrinsic demagnetization effects, and terahertz-range spin dynamics. These unique properties have attracted significant attention for spintronic applications requiring both robust spin control and minimal magnetic interference. Recently, KV2Se2O was identified as a metallic room-temperature altermagnetic material, but the origin of its high magnetic transition temperature remains elusive. In this work, it was found that both antiferromagnetic and ferromagnetic exchange coupling jointly play a crucial role in achieving the high magnetic transition temperature. Furthermore, K atoms enhance the magnetic moments of V atoms through charge transfer, thereby enhancing magnetic exchange energy and elevating the magnetic transition temperature. Additionally, strain effects can modulate the magnetic properties and the magnetic transition temperature, highlighting their potential for tailoring altermagnetism. These results not only motivate further exploration of room-temperature altermagnets but also pave the way for optimizing KV2Se2O in future magnetic and spintronic nanodevices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"54 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145188997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optical dichroism, valley polarization, and noncollinear spin currents in monolayer altermagnetic Ca(CoN)2 光二色性、谷极化和单层交变Ca(CoN)2的非共线自旋电流

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-09-29 DOI: 10.1063/5.0291966

Jin-Yang Li, An-Dong Fan, Si Li, Wen-Li Yang

{"title":"Optical dichroism, valley polarization, and noncollinear spin currents in monolayer altermagnetic Ca(CoN)2","authors":"Jin-Yang Li, An-Dong Fan, Si Li, Wen-Li Yang","doi":"10.1063/5.0291966","DOIUrl":"https://doi.org/10.1063/5.0291966","url":null,"abstract":"Altermagnets, recently recognized as a third class of collinear magnetic materials, have garnered increasing attention in condensed matter physics. In this study, combining first-principles calculations with theoretical analysis, we conduct a comprehensive investigation of the intriguing physical properties of the two-dimensional altermagnetic material Ca(CoN)2. We demonstrate that monolayer Ca(CoN)2 is a semiconductor characterized by spin-split, nonrelativistic band structures, featuring a pair of valleys located at the time-reversal invariant momenta X and Y points. These valleys are interconnected through crystal symmetries rather than time-reversal symmetry and exhibit opposite Berry curvature. We find that the system exhibits valley-contrasting optical circular and linear dichroism. Moreover, we show that the application of uniaxial strain can effectively induce valley polarization, while finite carrier doping gives rise to piezomagnetic responses. In addition, noncollinear spin currents are found to be generated under an applied in-plane electric field. These results reveal rich valley and spin phenomena in monolayer Ca(CoN)2, underscoring its promising potential for future applications in valleytronics, spintronics, and multifunctional nanoelectronic devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"18 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145188998","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Structural and electronic properties of hydrogen-terminated diamond field-effect transistors with h-BN gate dielectric featuring native point defects 具有原生点缺陷的h-BN栅极介质端氢金刚石场效应晶体管的结构和电子性能

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-09-26 DOI: 10.1063/5.0282593

Qingzhong Gui, Wei Yu, Chunmin Cheng, Taiqiao Liu, Xuhao Wan, Jinhao Su, Guoyou Liu, John Robertson, Sheng Liu, Zhaofu Zhang, Xin Yang, Yuzheng Guo

{"title":"Structural and electronic properties of hydrogen-terminated diamond field-effect transistors with h-BN gate dielectric featuring native point defects","authors":"Qingzhong Gui, Wei Yu, Chunmin Cheng, Taiqiao Liu, Xuhao Wan, Jinhao Su, Guoyou Liu, John Robertson, Sheng Liu, Zhaofu Zhang, Xin Yang, Yuzheng Guo","doi":"10.1063/5.0282593","DOIUrl":"https://doi.org/10.1063/5.0282593","url":null,"abstract":"High-mobility normally-off field-effect transistors (FETs) based on hexagonal boron nitride (h-BN)/hydrogen-terminated diamond (H-diamond) heterostructures and two-dimensional hole gas (2DHG) demonstrate tremendous potential. In this letter, we study structural and electronic properties of H-diamond FETs with h-BN gate dielectric featuring native point defects by first-principles calculations. The surface transfer doping model is applied to give theoretical insights into the energy band evolution of 2DHG H-diamond devices. In the case of a high electron affinity (EA) material acting as an electron acceptor on the H-diamond surface, the energy band on the H-diamond surface bends upwards. When a low EA material acts as a surface donor, the energy band on the H-diamond surface bends downward at this point. The local density of states for positive and negative valence defects in h-BN correspond to a downward and upward band bending on the H-diamond side, respectively. This result indicates that positive and negative valence defects in h-BN cause the h-BN/H-diamond heterostructure with different interfacial properties. The findings of this work can provide a rational design for improving the performance of diamond-based devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"92 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145153719","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Tuning polariton vortices in an asymmetric ring potential 非对称环势中极化子涡的调谐

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-09-26 DOI: 10.1063/5.0287076

Qiang Ai, Xuekai Ma, Franziska Barkhausen, Xiaokun Zhai, Chunzi Xing, Xinmiao Yang, Peilin Wang, Tianyu Liu, Yong Zhang, Yazhou Gu, Peigang Li, Zhitong Li, Zacharias Hatzopoulos, Pavlos G. Savvidis, Stefan Schumacher, Tingge Gao

引用次数: 0

Dual-mode operation of ring-shaped spin Hall magnetoresistance sensor with biaxial sensing capability 具有双轴感应能力的环形自旋霍尔磁阻传感器的双模工作

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-09-26 DOI: 10.1063/5.0282441

Jiayi Xu, Yuxin Si, Jiaqi Wang, Tingxuan Zhang, Zhenfei Hou, Yihong Wu

引用次数: 0

Orientation-dependent β-Ga2O3 heterojunction diode with atomic layer deposition (ALD) NiO 取向依赖β-Ga2O3异质结二极管与原子层沉积（ALD） NiO

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-09-26 DOI: 10.1063/5.0285622

Yizheng Liu, Shane M. W. Witsell, John F. Conley, Sriram Krishnamoorthy

{"title":"Orientation-dependent β-Ga2O3 heterojunction diode with atomic layer deposition (ALD) NiO","authors":"Yizheng Liu, Shane M. W. Witsell, John F. Conley, Sriram Krishnamoorthy","doi":"10.1063/5.0285622","DOIUrl":"https://doi.org/10.1063/5.0285622","url":null,"abstract":"This work reports the demonstration of ALD-deposited NiO/β-Ga2O3 heterojunction diodes (HJDs) on low doped (ND-NA ≤ 1 × 1016 cm−3) drift layers and highly doped (001) & (100) n+ substrates (ND-NA &gt; 1 × 1018 cm−3) with experimental observation of a parallel-plane junction electric field as high as 7.5 MV/cm, revealing a crystal orientation dependence in β-Ga2O3. We use a metalorganic precursor, bis(1,4-di-tert-butyl-1,3-diazadienyl) (nickel Ni(tBu2DAD)2), with ozone (O3) to deposit NiO. The NiO/β-Ga2O3 HJD on the 7.7 μm-thick HVPE-grown drift region exhibited an on-state current density of ∼20 A/cm2 at 5 V, ∼10−8 A/cm2 reverse leakage at low reverse bias (−5 V), and a rectifying ratio (Jon/Joff) of ∼109. The HJD broke down at ∼2.2 kV reverse bias, corresponding to a ∼3.4 MV/cm parallel-plane junction electric field, with a noise-floor reverse leakage (10−8–10−6 A/cm2, nA) at 80% of the device's catastrophic breakdown voltage. The NiO/β-Ga2O3 HJDs on n+ (001) & (100) highly doped substrates exhibited breakdown voltages at 12.5–16.0 and 28.5–70.5 V, respectively, with extracted critical electric fields (EC) at 2.30–2.76 and 4.33–7.50 MV/cm, revealing a substrate crystal orientation dependence on breakdown electric field for β-Ga2O3. The 7.5 MV/cm EC reported here is one of the highest parallel-plane junction electric fields reported in literature.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"16 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145153714","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0