Applied Physics Letters最新文献_第9页

Thickness-driven evolution of optical transitions and dielectric function in few-layer MoS2 薄层二硫化钼中光学跃迁和介电函数的厚度驱动演化

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-05 DOI: 10.1063/5.0354897

Premlata Yadav,Budhi Singh,Chandrabhan Dohare,Nayana Devaraj,Varun Gupta,Kartick Tarafder,Subhasis Ghosh

{"title":"Thickness-driven evolution of optical transitions and dielectric function in few-layer MoS2","authors":"Premlata Yadav,Budhi Singh,Chandrabhan Dohare,Nayana Devaraj,Varun Gupta,Kartick Tarafder,Subhasis Ghosh","doi":"10.1063/5.0354897","DOIUrl":"https://doi.org/10.1063/5.0354897","url":null,"abstract":"MoS2 film thickness strongly influences light absorption and interaction, impacting its performance in layered optoelectronic devices. Earlier studies have mostly examined the optical features, dielectric response, and electronic structure separately, especially for large-area films grown by chemical vapor deposition (CVD). Here, we bring these together and follow how they evolve as CVD-grown MoS2 changes from bilayer to bulk-like thickness (1.32–5.14 nm), using UV–visible absorption, Raman spectroscopy, spectroscopic ellipsometry, and first-principles calculations. We resolve six optical transitions (A–F) between 1.7 and 5.5 eV. The A and B excitons come from spin–orbit-split valence bands at the K/K′ valleys, while the higher-energy C–F transitions arise from band-nesting and interband processes at several critical points. As the films thicken, the transitions broaden and shift, reflecting stronger interlayer coupling and dielectric screening, and the Raman mode separation tracks changes in the optical bandgap. Our calculations reproduce the overall ordering and thickness trends of the measured transitions and identify their origin in the band structure.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"7 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149089889","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Deterministic selector–memristor mode switching in SnSe-based devices via ultraviolet-mediated interface engineering 基于紫外介导界面工程的snse器件的确定性选择器-忆阻模式切换

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-05 DOI: 10.1063/5.0353240

Sunhyuk Lim,Dohyung Lee,Sungjune Jung,Hyunjin Park,Wooseok Song

{"title":"Deterministic selector–memristor mode switching in SnSe-based devices\u0000 via\u0000 ultraviolet-mediated interface engineering","authors":"Sunhyuk Lim,Dohyung Lee,Sungjune Jung,Hyunjin Park,Wooseok Song","doi":"10.1063/5.0353240","DOIUrl":"https://doi.org/10.1063/5.0353240","url":null,"abstract":"Resistive switching devices are promising candidates for high-density memory and in-memory computing applications, but sneak-path leakage in crossbar arrays requires selector elements with strong nonlinearity. Here, we demonstrate deterministic switching-mode selection in solution-processed SnSe-based Al/AlOx/SnSe/Ag devices via ultraviolet-mediated interface engineering (UIE). By varying only the UIE time (tUIE) of the Al bottom electrode, the interfacial oxidation state was elaborately manipulated, as manifested by contact angle measurements and comprehensive spectro-microscopic surveys entailing x-ray photoelectron spectroscopy and cross-sectional scanning transmission electron microscopy observations. The pristine device (tUIE = 0 min) exhibited stable memristor operation with nonvolatile resistive switching, whereas the moderately oxidized device (tUIE = 10 min) showed selector operation with volatile threshold switching and a nonlinearity of approximately 2.25 × 103. In contrast, the excessively oxidized devices (tUIE = 20 min) revealed breakdown-like irreversible high-conductance behavior, which signals the existence of an optimized interfacial oxidation window for switching-mode control. These results propose newly devised UIE as a straightforward and indisputable strategy for deterministic selector–memristor mode control within a common SnSe-based device platform.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"228 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149089894","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Multitask parallel optical communication: Driven by high-dimensional orbital angular momentum arrays in multimode fibers 多模光纤中高维轨道角动量阵列驱动的多任务并行光通信

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-05 DOI: 10.1063/5.0356569

Jingjing Wang,Xianjing Li,Jiawei Wu,Mingyang Liu,Taishan Hong,Chaozhou Xu,Xiangsheng Xie,Haoxu Guo

{"title":"Multitask parallel optical communication: Driven by high-dimensional orbital angular momentum arrays in multimode fibers","authors":"Jingjing Wang,Xianjing Li,Jiawei Wu,Mingyang Liu,Taishan Hong,Chaozhou Xu,Xiangsheng Xie,Haoxu Guo","doi":"10.1063/5.0356569","DOIUrl":"https://doi.org/10.1063/5.0356569","url":null,"abstract":"As the demand for data capacity continues to grow, optical fiber communication systems are progressively approaching their theoretical limits, thereby motivating the exploration of high-dimensional (HD) degrees of freedom such as orbital angular momentum (OAM). However, strong intermodal coupling in multimode fibers (MMFs) poses substantial challenges for the transmission and recovery of HD optical information. Here, we propose and experimentally demonstrate an HD OAM-array-based multichannel multitask optical communication framework via a single MMF. By encoding different information tasks into HD OAM superposition states across multiple wave-vector (k) channels, the proposed scheme enables the simultaneous transmission of heterogeneous optical information within a unified fiber platform. At the receiver, a residual neural network constrained by a multi-channel quantum-state fidelity loss function directly reconstructs the transmitted signals from single-frame speckle intensity measurements, without requiring phase retrieval or channel inversion. Experiments demonstrate the synchronous communication of multichannel classical image signals and HD mutually unbiased basis states through the same MMF, while maintaining high reconstruction fidelity and low interchannel crosstalk under strong modal mixing conditions. This approach provides a scalable route toward high-capacity hybrid classical–quantum optical communication in fiber systems.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"15 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149089895","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Graphite-induced interface regulation in hard carbon for high-performance sodium-ion storage 高性能钠离子存储硬碳中石墨诱导的界面调节

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-05 DOI: 10.1063/5.0356390

Zihan Yang,Zheng Hu,Le Chen,Shan Yin,Wentao Zhang,Xusheng Wang,Wenjie Mai,Jinliang Li

引用次数: 0

Micro-jet dynamics during shock wave interaction with wall-proximal bubbles: Effects of an incident impinging vs glancing shock wave 激波与近壁气泡相互作用时的微射流动力学：入射冲击与掠射激波的影响

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-05 DOI: 10.1063/5.0351848

Yu-Han Wu,Hao-Dong Wu,Xin-Xin Shen,Jia-Yue Yang,Linhua Liu,Gao-Ming Xiang

{"title":"Micro-jet dynamics during shock wave interaction with wall-proximal bubbles: Effects of an incident impinging vs glancing shock wave","authors":"Yu-Han Wu,Hao-Dong Wu,Xin-Xin Shen,Jia-Yue Yang,Linhua Liu,Gao-Ming Xiang","doi":"10.1063/5.0351848","DOIUrl":"https://doi.org/10.1063/5.0351848","url":null,"abstract":"Shock wave–bubble interaction (SBI) in the liquid medium is a fundamental multiphase flow problem that attracts the interest of researchers, yet the effects of propagation direction of the incident shock wave on wall-proximal bubble collapse and micro-jet dynamics remain to be thoroughly investigated. In this Letter, we performed a comprehensive numerical investigation of SBI with different shock wave patterns and pressure amplitudes (ps), including an incident impinging shock wave (ISW) and a glancing shock wave (GSW). Several unique features are observed. For SBI with an incident ISW, the collapse-induced directed jet transits to a regular jet as ps increases, while for an incident GSW, only a regular jet forms. The maximum jet velocity ujetmax for the SBI with an incident ISW is higher than that with an incident GSW under the same ps, which is implied by the Kelvin impulse analysis with IK,ISWtotal=−Vb(∂J0/∂z)ez+IK,wall and IK,GSWtotal=IK,wall+O(ε). In addition, both the minimum equivalent radius and width of the bubble decrease monotonically with increasing ps for the SBI. Compared to SBI with an incident GSW, the incident ISW compresses the bubble to a smaller size, due to the synergistic effect of the wall constraints and the wall-normal pressure gradient induced by the ISW. Finally, the prolongation factor k also decreases monotonically with increasing ps, following a scaling law k∼(1+0.89γ)(ps/p0)−a.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"36 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149089955","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Competing self-trapped hole release and deep-level defect recombination in Ga2O3 photodetectors Ga2O3光电探测器中的竞争自困空穴释放和深能级缺陷复合

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-05 DOI: 10.1063/5.0349846

Shuaihang Xu,Qingxuan Sun,Jiahao Liao,Changjie Zhou,Huili Zhu,Cunzhi Sun,Weifeng Yang

引用次数: 0

Magnetic-field tuning of quantum phase slips in a macroscopic granular aluminum film 宏观颗粒状铝膜中量子相滑移的磁场调谐

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-05 DOI: 10.1063/5.0353741

Rukshana Pervin,Mir Basit Hussain,Umesh Chandra Thuwal,Deng Hu,Chao Xiong

{"title":"Magnetic-field tuning of quantum phase slips in a macroscopic granular aluminum film","authors":"Rukshana Pervin,Mir Basit Hussain,Umesh Chandra Thuwal,Deng Hu,Chao Xiong","doi":"10.1063/5.0353741","DOIUrl":"https://doi.org/10.1063/5.0353741","url":null,"abstract":"Quantum phase slips (QPSs) fundamentally govern low-temperature dissipation in one-dimensional nanoscale superconductors but remain largely unexplored in macroscopic architectures lacking strict geometric confinement. In this work, the magnetic-field-tuned evolution of the macroscopic quantum tunneling regime is demonstrated in a wide granular aluminum film (7 × 0.8 mm2). Systematic zero-field current–voltage and magnetotransport measurements reveal that a perpendicular magnetic field systematically amplifies quantum fluctuations by suppressing the local phase-slip activation barrier, ΔF. The extracted QPS parameters exhibit a strongly anti-correlated scaling: ΔF decays monotonically, while the quantum attempt frequency Γqps increases exponentially, driving a continuous crossover into a phase-fluctuation-dominated regime. Furthermore, scaling of the residual low-temperature resistance reveals a pronounced renormalization relative to the single-channel limit. This behavior is accounted for by a percolative network comprising ∼105 parallel, quasi-one-dimensional superconducting channels. These findings establish the magnetic field as a robust tuning parameter for QPS dynamics in scalable thin-film architectures, offering critical operational insights for the design of resilient, phase-slip-based superconducting quantum hardware.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"2 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149089957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Work-function control of the interfacial Dzyaloshinskii–Moriya interaction in Pt and Pd-based multilayers 铂和钯基多层膜中Dzyaloshinskii-Moriya相互作用的功函数控制

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-05 DOI: 10.1063/5.0343057

Fernando Ajejas,William Legrand,Inés García-Manuz,Johann Mertens,Sophie Collin,Florian Godel,Aymeric Vecchiola,Karim Bouzehouane,Vincent Cros,Nicolas Reyren

{"title":"Work-function control of the interfacial Dzyaloshinskii–Moriya interaction in Pt and Pd-based multilayers","authors":"Fernando Ajejas,William Legrand,Inés García-Manuz,Johann Mertens,Sophie Collin,Florian Godel,Aymeric Vecchiola,Karim Bouzehouane,Vincent Cros,Nicolas Reyren","doi":"10.1063/5.0343057","DOIUrl":"https://doi.org/10.1063/5.0343057","url":null,"abstract":"The emergence of chiral magnetic interactions at interfaces has strongly impacted our understanding of spin textures and magnetic order in low-dimensional systems. Originating from the interplay between spin–orbit coupling (SOC) and broken inversion symmetry, these interactions underpin the formation of skyrmions, chiral domain walls (DW), and other topologically non-trivial spin structures. In this article, we explore the fundamental mechanisms driving interfacial Dzyaloshinskii–Moriya interaction (DMI) through the investigation of its evolution in (Pt|Co|M)n and (Pd|Co|M)n multilayers with n=3–6 and various capping metals M (Ni, Ru, Pd, Al, Pt, and Au). The interfacial DMI constant Ds is extracted using an analytical model based on the equilibrium stripe-domain periodicity, the DW width parameter, and the internal DW angle. We find that Ds becomes almost constant, independent of n, indicating that the DMI amplitude is weakly affected by the number of repetitions (dipolar fields, quality of interfaces) in this regime. Most importantly, both the magnitude and sign of Ds exhibit a robust linear dependence on the work-function difference between Co and the capping metal, ΔΦ=ΦM−ΦCo, reflecting the interfacial potential gradient. The same slope is found for both Pt- and Pd-based multilayers despite their different SOC strengths, providing a simple and predictive route to engineer chiral interactions in metallic multilayer stacks.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"9 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149151517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Tuning magnetism and transport via interatomic distance in a p -wave magnet candidate Mn5Si3 p波候选磁体Mn5Si3的原子间距离调谐磁性和输运

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-05 DOI: 10.1063/5.0346961

Feng Zhou,Hao Li,Hang Li,Guanghui Lu,Yue Lu,Linxuan Song,Tao Zhu,Feng Jin,Youguo Shi,Yong-Chang Lau,Wenhong Wang

{"title":"Tuning magnetism and transport via interatomic distance in a\u0000 p\u0000 -wave magnet candidate Mn5Si3","authors":"Feng Zhou,Hao Li,Hang Li,Guanghui Lu,Yue Lu,Linxuan Song,Tao Zhu,Feng Jin,Youguo Shi,Yong-Chang Lau,Wenhong Wang","doi":"10.1063/5.0346961","DOIUrl":"https://doi.org/10.1063/5.0346961","url":null,"abstract":"Unconventional antiferromagnets, including altermagnets and p-wave magnets, can exhibit spin splitting and anomalous transport with vanishing net magnetization, providing a promising platform for antiferromagnetic spintronics. However, microscopic control of their magnetic states and anomalous Hall responses remains insufficiently understood. Here, focusing on a p-wave magnet candidate Mn5Si3, we investigate three types of Mn5Si3 single crystals to clarify how interatomic distances regulate the candidate p-wave magnetic state and anomalous Hall effect. Despite having indiscernible chemical compositions and undergoing similar structural-transition sequences upon cooling, Rietveld refinements show that distinct changes in the average atomic environments, particularly in the Mn–Mn distances, modify the competing Mn–Mn exchange interactions and redistribute Mn moments, leading to different low-temperature magnetic responses and field-induced magnetic transitions. Consequently, the anomalous Hall conductivity is tuned to approximately −162, −125, and 59 S/cm in the three samples, respectively, showing pronounced changes in both magnitude and sign. Theoretical calculations further indicate that the anomalous Hall response is not simply determined by magnetization but arises from the coupled modulation of magnetic configuration and electronic structure by structural degrees of freedom. These results identify average Mn–Mn interatomic distance as a key microscopic parameter for controlling anomalous Hall transport in the p-wave magnet candidate Mn5Si3 and further suggest interatomic distance engineering as an effective route for manipulating unconventional antiferromagnetic spintronic responses.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"26 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149151507","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Heteroepitaxy of 2D MoO2 single crystals on A-plane sapphires for in-sensor edge computing 用于传感器内边缘计算的二维MoO2单晶在a平面蓝宝石上的异质外延

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-05 DOI: 10.1063/5.0354447

Xuyan Zhang,Zixiang Mao,Ruxia Du,Peiyu Zeng,Yuxi Ji,Xinfei Guan,Wei Xu,Yanling Wu,Zhehan Wang,Chengdong Zhao,Xu Jing,Zhenhua Ni,Wenhui Wang,Li Tao

{"title":"Heteroepitaxy of 2D MoO2 single crystals on A-plane sapphires for in-sensor edge computing","authors":"Xuyan Zhang,Zixiang Mao,Ruxia Du,Peiyu Zeng,Yuxi Ji,Xinfei Guan,Wei Xu,Yanling Wu,Zhehan Wang,Chengdong Zhao,Xu Jing,Zhenhua Ni,Wenhui Wang,Li Tao","doi":"10.1063/5.0354447","DOIUrl":"https://doi.org/10.1063/5.0354447","url":null,"abstract":"Two-dimensional (2D) non-layered oxides, such as MoO2, are emerging candidates for next-generation electronics, optoelectronics, and sensors, especially novel in-sensor computing. However, there is a lack of effective methods to grow large-area 2D MoO2 single crystals due to multiple preferred orientations induced by uncontrolled vertical growth. Here, we report a heteroepitaxial growth of unidirectionally aligned 2D MoO2 nanosheets on an A-plane sapphire substrate that has degenerated vertical symmetry to direct a uniaxial texture of monoclinic MoO2. This leads to 2D MoO2 single crystals covering &gt;90% of an entire centimeter-scale A-sapphire substrate confirmed by second-harmonic generation mapping and selected-area electron diffraction. These high-quality 2D MoO2 nanosheets yield a unique memristive photodetector that exhibits tunable photocurrent corresponding to five programmable logic states. These programmable states are further utilized to construct an in-sensor edge computing system for image contrast enhancement, demonstrating the potential of epitaxial 2D non-layered oxides for artificial vision, Internet of Things, and other emerging applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"74 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149089842","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0