Applied Physics Letters最新文献_第9页

Suppression of indium out-diffusion during molecular beam epitaxy growth of CdTe on InSb substrates InSb基底上CdTe分子束外延生长过程中铟向外扩散的抑制

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-05-15 DOI: 10.1063/5.0266829

Tyler T. McCarthy, Zheng Ju, Allison M. McMinn, Xin Qi, Fikri Aqariden, Pok-Kai Liao, Pradip Mitra, Yong-Hang Zhang

{"title":"Suppression of indium out-diffusion during molecular beam epitaxy growth of CdTe on InSb substrates","authors":"Tyler T. McCarthy, Zheng Ju, Allison M. McMinn, Xin Qi, Fikri Aqariden, Pok-Kai Liao, Pradip Mitra, Yong-Hang Zhang","doi":"10.1063/5.0266829","DOIUrl":"https://doi.org/10.1063/5.0266829","url":null,"abstract":"While HgCdTe remains the workhorse material for high-performance infrared (IR) detectors, there is still an ever-increasing demand for devices with lower costs and minimal defect densities. Epitaxial HgCdTe is typically grown on either low-cost Si substrates utilizing a CdTe virtual substrate with a large lattice mismatch or high-cost bulk CdZnTe substrates. Although high-quality CdTe epilayers can be successfully grown by molecular beam epitaxy on lattice-matched InSb (100) and (211)B substrates, InSb substrates are not used due to In out-diffusion and contamination concerns. This paper reports a comparison study of the different MBE processes of CdTe growth on InSb substrates. A compound CdTe cell and two individual elemental Cd and Te effusion cells were used under different growth conditions, Cd-rich vs Te-rich. CdTe epilayers grown on InSb under Cd-rich conditions using single elemental Cd and Te cells were shown to be of higher quality with significantly reduced In out-diffusion in regard to the standard CdTe growth process under Te-rich conditions using a compound CdTe cell and a Te cell. High-quality CdTe epilayers were achieved with a high-resolution x-ray diffraction FWHM linewidth of 35 arcsec and In concentrations below 1015 cm−3 determined from secondary ion mass spectrometry. A heavy Cd soak of the InSb surface prior to growth initiation of the CdTe layer may also suppress the out-diffusion of In and the subsequent formation of the In–Te alloy. The increase in CdTe epilayer quality under Cd-rich conditions using elemental Cd and Te cells is found to be consistent for both (100) and (211) orientations.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"25 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144066406","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Oriented nanocrystalline silicon oxide contact enables excellent passivation for silicon solar cells 定向纳米晶氧化硅接触为硅太阳能电池提供了良好的钝化性能

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-05-15 DOI: 10.1063/5.0254244

Yang Li, Xiyang Geng, Yuhe Zheng, Yonglin Ye, Min Li, Xuying Duan, Junhua Xu, Ruilong Zhang, Shaohua Liu, Wenkai Zhou, Xingliang Li, Liting Wang, Guoping Huang, Feng Zhu

{"title":"Oriented nanocrystalline silicon oxide contact enables excellent passivation for silicon solar cells","authors":"Yang Li, Xiyang Geng, Yuhe Zheng, Yonglin Ye, Min Li, Xuying Duan, Junhua Xu, Ruilong Zhang, Shaohua Liu, Wenkai Zhou, Xingliang Li, Liting Wang, Guoping Huang, Feng Zhu","doi":"10.1063/5.0254244","DOIUrl":"https://doi.org/10.1063/5.0254244","url":null,"abstract":"Silicon oxide (SiOx) is often used to provide powerful passivation for the crystalline silicon (c-Si) solar cells; however, conventional SiOx passivated contacts are typically amorphous and defective, with low electrical conductivity. In this study, we introduce a sol-crystallization induction (SCI) method that enables the growth of compact, less defective, and vertically oriented SiOx (v-SiOx) passivated contacts on the c-Si surface. Compared to a-SiOx:H, v-SiOx demonstrates enhanced carrier concentration and vertical conductivity, forming an efficient electron-selective conduction contacts. By optimizing the v-SiOx nanocrystalline contact, we achieved an open-circuit voltage (VOC) of 746 mV and a short-circuit current density (JSC) of 41.54 mA cm−2 for the tunnel oxide passivated contact (TOPCon) solar cells, resulting in a power conversion efficiency (PCE) exceeding 26.01%. The promising SiOx passivation is expected to offer a significant support for the further development of high-efficiency c-Si solar cells, both in TOPCon and silicon heterojunction (SHJ) technologies.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"30 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144066408","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optimization of HWCVD-grown i-a-Si:H films through synergistic adjustment of hydrogen dilution ratio and hot-wire temperature 通过调节氢稀释比和热线温度来优化hwcvd生长的i-a-Si:H薄膜

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-05-15 DOI: 10.1063/5.0268989

Hongchen Meng, Xiaoyuan Wu, Guanfa Zhong, Lang Zhou

引用次数: 0

Double-layer LiNbO3 longitudinally excited shear wave resonators with ultra-large electromechanical coupling coefficient and spurious-free performance 具有超大机电耦合系数和无杂散性能的双层LiNbO3纵向激发剪切波谐振器

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-05-15 DOI: 10.1063/5.0250773

Zhen-Hui Qin, Hao Yan, Chen-Bei Hao, Shu-Mao Wu, Hua-Yang Chen, Sheng-Nan Liang, Si-Yuan Yu, Yan-Feng Chen

引用次数: 0

Dynamic modulation of dual-band nonreciprocal radiation in a graphene–Weyl semimetal plasmonic structure 石墨烯- weyl半金属等离子体结构中双波段非互易辐射的动态调制

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-05-15 DOI: 10.1063/5.0270822

Ye Ming Qing, Jiao Liu, Zhaoyan Yang, Yue Gou, Liang Wei Wu, Jun Wu

引用次数: 0

Dilute MnBi2Te4-alloying enables high-performance GeTe thermoelectrics 稀mnbi2te4合金化可实现高性能GeTe热电器件

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-05-15 DOI: 10.1063/5.0267606

Dan Zhang, Hongli Wang, Jiandong Liu, Manzhe Zhao, Guannan Liu, Junyou Yang, Yubo Luo, Shufang Wang

{"title":"Dilute MnBi2Te4-alloying enables high-performance GeTe thermoelectrics","authors":"Dan Zhang, Hongli Wang, Jiandong Liu, Manzhe Zhao, Guannan Liu, Junyou Yang, Yubo Luo, Shufang Wang","doi":"10.1063/5.0267606","DOIUrl":"https://doi.org/10.1063/5.0267606","url":null,"abstract":"As an attractive lead-free thermoelectric material, GeTe has gained widespread interest. However, the extremely high hole concentration seriously limits the thermoelectric performance of pristine GeTe. In this work, dilute MnBi2Te4-alloying is utilized to synergically optimize electrical- and thermal-transport properties of GeTe for thermoelectric performance improvement. It can not only decrease the precipitation of Ge to optimize carrier concentration, but also promote multi-band convergence to enlarge the density of state effective mass. Furthermore, the MnBi2Te4-alloyed samples also maintain a moderate carrier mobility. In addition, the increased point-defect scattering for phonons leads to the significant reduction in lattice thermal conductivity. Consequently, a high peak thermoelectric figure of merit (ZT) of ∼1.8 at 723 K and a large average ZT of ∼1.0 from 300 to 723 K are achieved in 4% MnBi2Te4-alloyed GeTe, showing the potential of dilute compound alloying to enhance the thermoelectric performance of GeTe by the concurrent regulation of electrical- and thermal-transport properties.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"120 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144066400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Complex-valued Tellegen response 复值Tellegen响应

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-05-15 DOI: 10.1063/5.0267381

Fedor Nutskii, Eduardo Barredo-Alamilla, Maxim A. Gorlach

引用次数: 0

Low threshold InAs-based interband cascade lasers with room temperature lasing wavelengths near 4 and 4.4 μ m 室温激光波长接近4和4.4 μ m的低阈值inas基带间级联激光器

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-05-15 DOI: 10.1063/5.0260619

Jinglong Xie, Yuzhe Lin, Shihao Zhu, Yuan Ma, Xinkai Liu, Wanhua Zheng, Rui Q. Yang, Hong Lu

{"title":"Low threshold InAs-based interband cascade lasers with room temperature lasing wavelengths near 4 and 4.4 μ m","authors":"Jinglong Xie, Yuzhe Lin, Shihao Zhu, Yuan Ma, Xinkai Liu, Wanhua Zheng, Rui Q. Yang, Hong Lu","doi":"10.1063/5.0260619","DOIUrl":"https://doi.org/10.1063/5.0260619","url":null,"abstract":"Mid-infrared laser spectroscopy at wavelengths of 4–5 μm is important for the detection of greenhouse gases, including CO2 at 4.23 μm, N2O at 4.45 μm, and CO at 4.60 μm, with ultra-high sensitivity and selectivity. It can be used in environmental monitoring, real-time industrial process controls, medical diagnosis/therapeutics, and other applications. In this work, we report significant advances in interband cascade lasers (ICLs) with the shortest emission wavelengths among InAs-based ICLs at room temperature (RT). Benefiting from the precise control of the growth parameters in molecular beam epitaxy, ICL structures were epitaxially grown on InAs substrates with high-quality that is validated by a low threshold current density of 1.9 A/cm2 at 80 K. By minimizing the Urbach tail absorption loss in InAs with excellent material quality, broad-area (BA) devices emitting at 4.02 μm in pulsed operation are demonstrated at 300 K with a threshold current density of 232 A/cm2, which is the lowest among the InAs-based ICLs. These BA devices were able to operate with a maximum voltage efficiency of 89% at temperatures up to 258 K in the continuous wave (cw) mode and to 378 K in the pulsed mode, indicating improved thermal dissipation and a sufficient temperature range for narrow ridge devices to achieve cw operation at RT and above. These demonstrated device features suggest high potential of low-cost InAs-based ICLs for real-world applications in a wide mid-infrared wavelength region.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"4 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144066403","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optimizing spin polarization in quantum dot vertical-gain structures through pump wavelength selection 通过泵浦波长选择优化量子点垂直增益结构中的自旋极化

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-05-15 DOI: 10.1063/5.0261768

Najm Alhosiny, Sami S. Alharthi, James Doogan, Edmund Clarke, Thorsten Ackemann

引用次数: 0

Study of Au doping processing for high quality extrinsic doped n on p HgCdTe detector 高质量HgCdTe探测器外源掺杂n的Au掺杂工艺研究

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-05-15 DOI: 10.1063/5.0268537

Dapeng Jin, Zhikai Gan, Songmin Zhou, Xi Wang, Quanzhi Sun, Xun Li, Liqi Zhu, Chun Lin

引用次数: 0