Applied Physics Letters最新文献_第2页

Van der Waals epitaxy of (Bi1−xInx)2Te3 solid solutions with a broad operating temperature range for thin-film thermoelectrics （Bi1−xInx）2Te3固溶体的Van der Waals外延，具有广泛的工作温度范围，用于薄膜热电器件

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-09 DOI: 10.1063/5.0264737

Xueying Sun, Junye Li, Peng Zhao, Rui Qi, Yingchao Liu, Haining Ji, Handong Li, Xiaobin Niu, Zhiming Wang

引用次数: 0

Synergistic mechanism underlying the enhanced electrical performance of vertical β-Ga2O3 Schottky barrier diodes through proton irradiation and annealing 质子辐照和退火提高垂直β-Ga2O3肖特基势垒二极管电性能的协同机制

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-09 DOI: 10.1063/5.0278203

Weihao Lin, Yun Li, Junzheng Gao, Zhimei Yang, Min Gong, Mingmin Huang, Yuhao Wang, Chenglin Liao, Yao Ma, Gang Xiang

{"title":"Synergistic mechanism underlying the enhanced electrical performance of vertical β-Ga2O3 Schottky barrier diodes through proton irradiation and annealing","authors":"Weihao Lin, Yun Li, Junzheng Gao, Zhimei Yang, Min Gong, Mingmin Huang, Yuhao Wang, Chenglin Liao, Yao Ma, Gang Xiang","doi":"10.1063/5.0278203","DOIUrl":"https://doi.org/10.1063/5.0278203","url":null,"abstract":"This study presents the enhancement of the electrical performance in vertical β-Ga2O3 Schottky barrier diodes (SBDs) through proton irradiation followed by annealing processes, along with the underlying physical mechanisms. Initially, the rectification behavior of these SBDs is significantly degraded following 5 MeV proton irradiation. However, for the device treated post annealing, following irradiation (D1-A500), the carrier concentration (ND) decreases by 72.1%, while the breakdown voltage (BV) increases by 124.5%. Deep level transient spectroscopy analysis reveals an increase in the concentration of acceptor traps, E2* (EC-0.74 eV), and the appearance of a new defect peak, E2 (EC-0.86 eV), attributed to proton irradiation and subsequent annealing. E2 is possibly associated with oxygen antisites (OGaII). Further simulations using technology computer aided design further verify that a reduction in ND improves the BV. Therefore, these findings elucidate the effect of proton irradiation on vertical β-Ga2O3 SBDs and emphasize the recovery of the devices by post-annealing treatment, providing valuable insights for application in radiation environments.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"10 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144586400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Observation of the thermally excited electromagnetic evanescent field on ultrathin metallic films 超薄金属薄膜上热激发电磁消失场的观察

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-09 DOI: 10.1063/5.0272498

Kuan-Ting Lin, Yinghui Liang, Yusuke Kajihara

{"title":"Observation of the thermally excited electromagnetic evanescent field on ultrathin metallic films","authors":"Kuan-Ting Lin, Yinghui Liang, Yusuke Kajihara","doi":"10.1063/5.0272498","DOIUrl":"https://doi.org/10.1063/5.0272498","url":null,"abstract":"This study explored thermally excited electromagnetic evanescent fields on gold ultrathin metallic films (UTMFs) using a passive scattering-type scanning near-field optical microscope in the long-wavelength infrared range (14.1 μm). Near-field (NF) signals were measured on gold UTMFs with thicknesses ranging from 5.6 to 69.4 nm. A sharp drop in the NF signal intensity was observed near the critical thickness (dc = 9.2 nm), marking the metal-to-insulator transition. This decline was linked to reduced free electron density N, caused by structural changes like island formation, cracks, and reduced film thickness. These constraints confined electron motion, lowering the plasma frequency (ωp), as described by a thickness-dependent Drude model. Additionally, measurements of NF signal decay length revealed the thermal interaction range of evanescent fields, providing insights into near-field heat transfer. Supported by the local density of states theory, the findings emphasize the role of electron density beneath the probe tip in NF signals. These insights into film structure, electron dynamics, and NF thermal radiation, have applications in nanoscale thermal management and infrared sensing technologies.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"10 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144593838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Digital optics and optical intelligent agent 数字光学与光学智能代理

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-09 DOI: 10.1063/5.0271341

Xiangang Luo

{"title":"Digital optics and optical intelligent agent","authors":"Xiangang Luo","doi":"10.1063/5.0271341","DOIUrl":"https://doi.org/10.1063/5.0271341","url":null,"abstract":"Over the past few decades, digital optical technologies have undergone significant advancements and revolutionized the optical science and technologies. It not only challenges the classical optical frameworks (e.g., the laws of refraction and reflection, and the optical diffraction limit) but also enables unprecedented control over light–matter interactions. Early research in the digital optics field predominantly focused on validating fundamental principles and demonstrating proof-of-concept applications. Recently, the fast breakthroughs in computational electromagnetics, artificial intelligence, and cross-scale nanofabrication have dramatically improved the performances of digital optical components. These advancements are now propelling the field toward addressing a pivotal challenge: How can digital optics be harnessed to manipulate optical information and energy under complex and harsh environments? This rapidly evolving frontier has garnered substantial attention within the photonics community, establishing it as a pivotal enabler for next-generation optical/photonic technologies. This Perspective briefly reviews the history and current landscape of digital optics, with a focus on discussing its future development and challenge toward optical intelligent agents (OIAs).","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"4 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144593841","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Measurement of temperature-dependent elastic moduli using S1-ZGV resonance and locally laser heating trapped A1 resonance 用S1-ZGV共振和局部激光加热捕获A1共振测量温度相关弹性模量

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-09 DOI: 10.1063/5.0274688

Haotian Jia, Xiangen Liu, Zhonghua Shen

引用次数: 0

Field- and frequency-tunable magnon–phonon resonances in arrays of ferromagnetic nanostripes 铁磁纳米条纹阵列中磁场和频率可调的磁子-声子共振

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-09 DOI: 10.1063/5.0278334

P. Carrara, M. Brioschi, R. Silvani, A. O. Adeyeye, G. Panaccione, G. Gubbiotti, G. Rossi, R. Cucini

引用次数: 0

Enhanced thermoelectric performance in organic thin films via MoO3-mediated contact resistance reduction and energy filtering 通过moo3介导的接触电阻降低和能量滤波提高有机薄膜的热电性能

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-09 DOI: 10.1063/5.0276224

YouBin Choi, Jeong Han Song, Juhyung Park, Jeonghun Kwak

{"title":"Enhanced thermoelectric performance in organic thin films via MoO3-mediated contact resistance reduction and energy filtering","authors":"YouBin Choi, Jeong Han Song, Juhyung Park, Jeonghun Kwak","doi":"10.1063/5.0276224","DOIUrl":"https://doi.org/10.1063/5.0276224","url":null,"abstract":"Organic thermoelectric (OTE) devices have garnered increasing attention as promising candidates for flexible and low-cost energy harvesting technologies. However, their performance has been largely constrained by high contact resistance, particularly when using cost-effective electrode materials such as aluminum, which exhibit poor energy level alignment with organic semiconductors. Herein, we demonstrate that the incorporation of a MoO3 interlayer between Al electrodes and ethylene glycol-doped poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) effectively reduces the contact resistance by alleviating the interfacial Schottky barrier. By systematically tuning the MoO3 thickness, we achieve a maximum output power of 56.1 pW at a temperature gradient of 3 K using a 4 nm MoO3 interlayer, which surpasses the performance of conventional OTE devices employing Au electrodes by 45%. Comprehensive electrical characterizations, including the transmission line method-based contact resistance analysis and temperature-dependent conductivity measurements, reveal that the optimized interfacial energy barrier of ∼0.10 eV facilitates efficient energy filtering, enhancing the Seebeck coefficient without degrading bulk transport properties. Our findings establish an effective interfacial engineering strategy for reducing contact resistance and optimizing energy filtering in OTE devices, offering a practical pathway toward scalable and low-cost thermoelectric module fabrication.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"161 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144586403","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Phase selection and texturing in molybdenum oxide films grown by reactive magnetron sputtering 反应磁控溅射制备氧化钼薄膜的相选择和织构

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-09 DOI: 10.1063/5.0273462

Faezeh A. F. Lahiji, Biplab Paul, Grzegorz Greczynski, Ganpati Ramanath, Arnaud le Febvrier, Per Eklund

引用次数: 0

Structural and electrical properties of MOCVD-grown scandium nitride thin films on sapphire, Si, GaN, and SiC 在蓝宝石、Si、GaN和SiC上mocvd生长的氮化钪薄膜的结构和电学性能

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-09 DOI: 10.1063/5.0274798

Vineeta R. Muthuraj, Claire E. Vozel, Michael Iza, Abdullah Alharbi, Abdullah Almogbel, Shuji Nakamura, Umesh K. Mishra, Stacia Keller, Steven P. DenBaars

{"title":"Structural and electrical properties of MOCVD-grown scandium nitride thin films on sapphire, Si, GaN, and SiC","authors":"Vineeta R. Muthuraj, Claire E. Vozel, Michael Iza, Abdullah Alharbi, Abdullah Almogbel, Shuji Nakamura, Umesh K. Mishra, Stacia Keller, Steven P. DenBaars","doi":"10.1063/5.0274798","DOIUrl":"https://doi.org/10.1063/5.0274798","url":null,"abstract":"Investigation of the growth and properties of binary ScN can aid in the understanding of its ferroelectric ternary alloys with GaN and AlN, but there are no existing data for ScN grown by metalorganic chemical vapor deposition (MOCVD). In this work, ScN growth by MOCVD was demonstrated using the Sc precursor (EtCp)2Sc(dbt). A broad range of growth temperatures, pressures, and V/III ratios were tested to investigate the impact of growth parameters on the properties of MOCVD-grown ScN. Approximately 100 nm-thick ScN films with growth rates from 0.06 to 0.20 Å/s were deposited on c-sapphire, (0001) GaN, Si-face 4H-SiC, and (001) Si. X-ray diffraction measurements showed that ScN films were solely (111)-oriented on both sapphire and GaN. Hall effect measurements revealed very high n-type electrical charge in the samples. The carrier concentrations of ScN on sapphire ranged from 2.1 × 1020 to 7.2 × 1020 cm−3, with electron mobilities in the range of 20–7 cm2 V−1 s−1. ScN films on GaN exhibited carrier concentrations from 9.6 × 1019 to 2.5 × 1020 cm−3 and electron mobilities from 42 to 8.5 cm2 V−1 s−1. The lowest sheet resistance of 45 Ω/□ (resistivity of 5.2 × 10−4 Ω-cm) was achieved for an ScN on sapphire film. These results indicate the potential for integrating ScN into the next generation of nitride electronics through MOCVD growth.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"690 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144593840","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Adjustable weak measurement differential microscopy via flat differentiator 可调弱测量微分显微镜通过平板微分器

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-09 DOI: 10.1063/5.0281357

Yurong Liu, Zhuoxin Zhang, Junfan Zhu, An Wang, Xiong Liu, Rongchun Ge, Zhiyou Zhang

{"title":"Adjustable weak measurement differential microscopy via flat differentiator","authors":"Yurong Liu, Zhuoxin Zhang, Junfan Zhu, An Wang, Xiong Liu, Rongchun Ge, Zhiyou Zhang","doi":"10.1063/5.0281357","DOIUrl":"https://doi.org/10.1063/5.0281357","url":null,"abstract":"Feature extraction and phase retrieval, as critical technical nodes in imaging technologies, play a pivotal role in label-free biological imaging and target recognition. Optical differential imaging is pivotal for extracting phase information in label-free biological imaging and feature extraction, yet existing techniques often suffer from complexity, limited adjustability, and anisotropic signals. Here, we propose an adjustable weak measurement differential microscopy that integrates a flat differentiator with weak measurement to achieve flexible, high-precision phase imaging. By modulating the orientation and incident angle of a uniaxial crystal, we demonstrate tunable spatial differentiation in both strength and direction, enabling isotropic edge detection and phase mining. Furthermore, the system enables rapid switching between optical spatial differentiation and differential interference contrast imaging modes via post-selection state adjustments to accommodate different application scenarios. The results demonstrate this miniaturized, modular approach enables breakthrough capabilities in automated sensing, label-free microscopy, and optical computing systems.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"21 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144586402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0