Applied Physics Letters最新文献_第2页

Obtaining bulk-like correlated oxide surfaces with protective caps 获得带有保护帽的大块状相关氧化物表面

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-23 DOI: 10.1063/5.0256840

Amit Cohen, Maria Baskin, Lishai Shoham, Shaked Caspi, Pini Shekhter, Tien-Lin Lee, Scott A. Chambers, Lior Kornblum

{"title":"Obtaining bulk-like correlated oxide surfaces with protective caps","authors":"Amit Cohen, Maria Baskin, Lishai Shoham, Shaked Caspi, Pini Shekhter, Tien-Lin Lee, Scott A. Chambers, Lior Kornblum","doi":"10.1063/5.0256840","DOIUrl":"https://doi.org/10.1063/5.0256840","url":null,"abstract":"Functional oxides exhibit a diverse range of correlated electron phenomena, some of which are highly attractive for novel electronic, magnetic, and optical devices. Despite decades of advancement of our fundamental understanding of these materials, they consistently fall short of realizing their promise in functional devices. We identify a significant bottleneck toward device realization to be surface overoxidation. Protective caps can effectively prevent overoxidation, but their interfaces with functional oxides are not well understood. These interfaces are critical for effectively using functional oxides in field-effect devices, where “the interface is the device.” This work addresses the chemistry and physics of the interface between protective caps and the correlated metal SrVO3, a model functional oxide. Our comparison of five different cap materials reveals effective protection and similar SrVO3 surface chemistry in all cases. Systematic comparisons of surface and bulk-sensitive photoelectron spectra reveal that negligible interface redox takes place, elucidating the cap-SrVO3 interface chemistry. This work demonstrates a robust and simple solution to the surface overoxidation problem in vanadates, paving the way toward effectively using these materials in field-effect devices. Our conclusions are general and can be applied to numerous other systems, thus moving oxide electronics closer to the realization of functional devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"42 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143872390","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of 20 MeV proton irradiation on the electrical properties of β-Ga2O3 Schottky barrier diodes with field plate 20mev质子辐照对场极板β-Ga2O3肖特基势垒二极管电性能的影响

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-23 DOI: 10.1063/5.0268847

Yahui Feng, Hongxia Guo, Jinxin Zhang, Xiaoping Ouyang, Ruxue Bai, Xuefeng Zheng, Xiaohua Ma, Yue Hao

{"title":"Effect of 20 MeV proton irradiation on the electrical properties of β-Ga2O3 Schottky barrier diodes with field plate","authors":"Yahui Feng, Hongxia Guo, Jinxin Zhang, Xiaoping Ouyang, Ruxue Bai, Xuefeng Zheng, Xiaohua Ma, Yue Hao","doi":"10.1063/5.0268847","DOIUrl":"https://doi.org/10.1063/5.0268847","url":null,"abstract":"In this Letter, the impact of 20 MeV proton irradiation on β-Ga2O3 Schottky barrier diodes (SBDs) with field plates has been investigated. After proton irradiation with fluences of 2 × 1012 and 5 × 1012 p/cm2, the forward current density (JF) decreased from 294.0 to 250.5 and 192.0 A/cm2, respectively. The turn-on voltage (Von) increased from 0.78 to 0.82 and 0.84 V, as measured by current–voltage (I–V) testing. Capacitance–voltage (C–V) measurements showed that the net carrier concentration in the lightly doped drift region of β-Ga2O3 decreased from 1.95 × 1016 to 1.83 × 1016 and 1.38 × 1016 cm−3 after proton irradiation. Additionally, C–V measurements at different frequencies reveal that capacitance gradually decreases as proton fluence increases, though the frequency has little effect on capacitance. The effect of proton irradiation on β-Ga2O3 SBDs was also characterized using low-frequency noise and x-ray photoelectron spectroscopy. The results indicated that the voltage noise spectral density (Sv) gradually increases with proton fluence and bias voltage before and after irradiation due to the introduction of defects. This study provides an important reference for the reliability assessment of β-Ga2O3 SBDs.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"28 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143872620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Computationally guided experimental validation of divacancy defect formation in 4H-SiC 4H-SiC中空位缺陷形成的计算导向实验验证

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-23 DOI: 10.1063/5.0255575

Taishi Kimura, Jonghoon Ahn, Nazar Delegan, Alan Dibos, Jiefei Zhang, Benjamin Pingault, Cunzhi Zhang, Giulia Galli, David Awschalom, F. Joseph Heremans

{"title":"Computationally guided experimental validation of divacancy defect formation in 4H-SiC","authors":"Taishi Kimura, Jonghoon Ahn, Nazar Delegan, Alan Dibos, Jiefei Zhang, Benjamin Pingault, Cunzhi Zhang, Giulia Galli, David Awschalom, F. Joseph Heremans","doi":"10.1063/5.0255575","DOIUrl":"https://doi.org/10.1063/5.0255575","url":null,"abstract":"Recent research into solid-state qubits for quantum information science has focused on optically addressable spin defects such as the negatively charged nitrogen-vacancy center in diamond and the neutrally charged divacancy (VV) in 4H-SiC as scalable quantum sensors and networking qubits. Within this context, direct investigations of the structural origin and defect formation dynamics of a sub-set of the VV center in 4H-SiC remain lacking. Here, we take a systematic experimental approach guided by predictions from first-principles simulations to gain a thorough mechanistic understanding of the VV defect formation and control in 4H-SiC. We study the effect of annealing time and temperature on VV formation in high-purity semi-insulating 4H-SiC samples following electron irradiation. Three different temperatures (1123, 1273, and 1473 K) and annealing duration (from 0.5 to 72 h) are chosen to explore VV formation in different regions. We find that samples annealed at 1273 K give the highest VV-related photoluminescence (PL) intensities, in agreement with the prediction from first-principles calculations. Furthermore, the logarithmic dependence of VV-related PL intensities on the annealing duration at 1273 K indicates that 1273 K provides sufficient thermal energy for silicon vacancy migration but not for VV migration. Together, these results suggest that efficient VV formation occurs above the VSi migration temperature and below the VV migration threshold.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"48 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143872617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of a second-harmonic current–phase relation on the behavior of a Josephson traveling-wave parametric amplifier 二次谐波电流-相位关系对约瑟夫森行波参量放大器性能的影响

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-23 DOI: 10.1063/5.0262555

Claudio Guarcello, Carlo Barone, Giovanni Carapella, Giovanni Filatrella, Andrea Giachero, Sergio Pagano

引用次数: 0

Oxygen vacancies facilitated hole transport in ZrO2 films by Al3+ doping for p-Si heterojunction solar cells 在p-Si异质结太阳能电池中掺杂Al3+促进了ZrO2薄膜中的空穴迁移

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-23 DOI: 10.1063/5.0263895

Di Zhao, Penghui Ren, Dan Liu, Songyu Li, Jianqiao Wang, Hang Zhou, Xiaoping Wu, Lingbo Xu, Ping Lin, Xuegong Yu, Peng Wang, Can Cui

{"title":"Oxygen vacancies facilitated hole transport in ZrO2 films by Al3+ doping for p-Si heterojunction solar cells","authors":"Di Zhao, Penghui Ren, Dan Liu, Songyu Li, Jianqiao Wang, Hang Zhou, Xiaoping Wu, Lingbo Xu, Ping Lin, Xuegong Yu, Peng Wang, Can Cui","doi":"10.1063/5.0263895","DOIUrl":"https://doi.org/10.1063/5.0263895","url":null,"abstract":"Transition metal oxides (TMOs) have attracted considerable attention for carrier-selective passivation contacts in crystalline silicon (c-Si) heterojunction solar cells. Among them, zirconium dioxide (ZrO2) exhibits outstanding advantages, such as high permittivity, the presence of fixed negative charges, and high thermal stability. However, it is usually considered incapable of being used as passivation contacts due to its ultra-wide (5.8 eV) bandgap and mismatched energy band structure. In this work, we have demonstrated that ZrO2 films act as hole-selective layers by elaborately regulating oxygen vacancies (VO). ZrO2 films (∼9 nm) prepared by the solution method provide a high surface passivation of p-Si with an effective carrier lifetime of 302 μs. The Al3+ doping not only increases the VO concentrations in the films but also changes the ratio of different categories of VO defects, significantly improving the hole transport properties, with the contact resistivity reduced from 246 to 52 mΩ·cm2. The p-Si/ZrO2:Al3+/Ag structured solar cell reaches a high conversion efficiency of 19.5%. This work shows that ultra-wide bandgap semiconductor materials have great potential as passivation contact layers by modulating the trap defects.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"74 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143872622","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Iterative segmentation algorithm for enhancing the accuracy of biomimetic polarized light compass 提高仿生偏振光罗经精度的迭代分割算法

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-22 DOI: 10.1063/5.0264235

Jue Wang, Zhou Li, Yanan Chen, Jianqiang Qian, Xiao Zhang

{"title":"Iterative segmentation algorithm for enhancing the accuracy of biomimetic polarized light compass","authors":"Jue Wang, Zhou Li, Yanan Chen, Jianqiang Qian, Xiao Zhang","doi":"10.1063/5.0264235","DOIUrl":"https://doi.org/10.1063/5.0264235","url":null,"abstract":"The primary challenge currently faced by bio-inspired polarized optical compasses lies in their poor environmental adaptability, resulting in low heading angle accuracy under complex weather conditions, such as cloudy and overcast days as well as when obscured by buildings. To enhance environmental adaptability, this paper first theoretically analyzes the impact of major atmospheric interference factors on polarization patterns. An analytical model is established to investigate the influence of multiple scattering on polarization patterns, and simulation data are used to verify the reliability of this model. Based on this model, the causes of errors in existing polarized compasses are analyzed. We propose an iterative symmetric segmentation image processing method that can effectively avoid the aforementioned errors while achieving high-speed computation. Experiments conducted under six different weather conditions, including cloudy days, cirrus, stratus, and building obscuration, demonstrate the high environmental adaptability of the proposed algorithm. The mean error of the heading angle is reduced from 11.7° to 1.4°. Furthermore, compared to more complex algorithms, this algorithm exhibits faster iterative convergence, enabling high-frequency navigation.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"69 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143862796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Strong elastic coupling: Out-of-plane strain, negative Poisson's ratio, and linear bandgap tunability 强弹性耦合：面外应变、负泊松比和线性带隙可调性

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-22 DOI: 10.1063/5.0260144

Chong Wang, Yang Dai, Luyuan Fan, Penghui Li, Tianye Jin, Yeqiang Bu, Zeya Li, Hongtao Yuan, Yingchun Cheng, Anmin Nie, Hongtao Wang, Zhongyuan Liu, Yongjun Tian

{"title":"Strong elastic coupling: Out-of-plane strain, negative Poisson's ratio, and linear bandgap tunability","authors":"Chong Wang, Yang Dai, Luyuan Fan, Penghui Li, Tianye Jin, Yeqiang Bu, Zeya Li, Hongtao Yuan, Yingchun Cheng, Anmin Nie, Hongtao Wang, Zhongyuan Liu, Yongjun Tian","doi":"10.1063/5.0260144","DOIUrl":"https://doi.org/10.1063/5.0260144","url":null,"abstract":"Strain engineering is a promising strategy for tailoring the properties of two-dimensional (2D) materials. Despite the challenge of interlayer cleavage due to weak van der Waals interactions, by using in situ transmission electron microscopy, we demonstrate that large uniaxial tensile strain can be applied to black phosphorus (BP) not only along the zigzag (ZZ) and armchair (AC) directions but also in the out-of-plane (OP) direction. Notably, the maximum tensile strain along the OP direction reaches 5.0%, comparable to that along ZZ and AC directions. Moreover, a negative Poisson's ratio is directly observed between OP/AC and AC/OP directions, indicating strong elastic coupling originating from interlayer–intralayer electron redistribution under tensile strain. Interestingly, different from tensile strain along ZZ or AC, the bandgap of BP is linearly tunable under OP tensile strain. This work underscores OP tensile strain offering avenues for tuning electronic, optical, and magnetic properties of 2D materials and potential applications in strain electronics and flexible electronics.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"4 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143862797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Tunnel-magnetoresistance sensors with sub-pT detectivity for detecting bio-magnetic fields 用于探测生物磁场的亚铂探测隧道磁电阻传感器

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-22 DOI: 10.1063/5.0263879

Takafumi Nakano, Kosuke Fujiwara, Mikihiko Oogane

引用次数: 0

Janus Rashba semiconductor of RbKNaBi: High thermoelectric performance and ultralow lattice thermal conductivity RbKNaBi的Janus Rashba半导体：高热电性能和超低晶格导热系数

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-22 DOI: 10.1063/5.0256286

Zhiyuan Xu, Cong Wang, Guoying Gao

引用次数: 0

Nitrogen-vacancy centers with high intrinsic effective fields as probes for electric noise 具有高本征有效场的氮空位中心作为电噪声探测器