{"title":"Correlation between giant surface potential and enthalpy relaxation in vacuum-deposited organic films","authors":"Tsuyoshi Tsujioka, Hiroyuki Kawashima, Kenji Koike, Naoki Matsumoto, Yohei Ono, Junwei Shen, Shinichiro Nakamura","doi":"10.1063/5.0322473","DOIUrl":"https://doi.org/10.1063/5.0322473","url":null,"abstract":"It is well known that vacuum deposition of organic molecules possessing electric dipoles leads to spontaneous molecular orientation, resulting in the formation of a giant surface potential (GSP). The GSP is expected to be useful for energy-harvesting devices, and improving carrier injection in organic light-emitting diodes; therefore, maximizing the GSP is crucial for device performance. Here, we systematically investigate the factors governing GSP formation by examining the roles of glass transition temperature (Tg), substrate temperature (Tsub), and deposition rate using a series of organic materials, including adamantane derivatives, diarylethenes, and spiropyrans. The molecular orientation parameter ⟨cosθ⟩ exhibits a clear dependence on Tg, indicating that surface molecular dynamics during deposition play a dominant role. We demonstrate that the GSP slope is maximized when Tsub is maintained at approximately 0.8–0.85 Tg. This condition coincides with the maximum enthalpy relaxation of vapor-deposited organic glasses. Based on these results, we propose a three-regime model describing GSP generation as a function of surface molecular mobility (Tsub/Tg scaling), providing practical guidelines for maximizing GSP in vapor-deposited organic thin films.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"1 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147681617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Multi-strategy cooperative optimization of thermoelectric performance in higher manganese silicide-based materials","authors":"Guangxu Zhang, Jingxian Wang, Jiaqi Dong, Qinglai Zhai, Qian Cao, Zhihai Ding, Shufang Wang, Jianglong Wang, Zhiliang Li","doi":"10.1063/5.0326471","DOIUrl":"https://doi.org/10.1063/5.0326471","url":null,"abstract":"Higher manganese silicide (HMS), a naturally abundant p-type thermoelectric (TE) material, exhibits an eco-friendly profile, low production cost, superior mechanical strength, and high thermal stability. Current strategies for enhancing the TE performance of HMSs focus on optimizing dopants for anionic/cationic substitution and nanocomposite engineering. Nevertheless, the cost-prohibitive nature of requisite dopants and nanocomponents, coupled with intricate synthesis routes, impedes their practical deployment. In this study, V-Al-co-doped HMS bulk specimens incorporated with CrSi2 are consolidated by spark plasma sintering following wet ball milling. This strategy employs dual-site doping, with V substituting at cationic Mn sites and Al at anionic Si sites to achieve acceptor doping, thereby increasing the hole concentration. Concurrently, CrSi2 nanoparticle incorporation enhances phonon scattering at grain boundaries, significantly suppressing lattice thermal conductivity (κl). Furthermore, both V and Cr interact with Mn, respectively, forming resonant states near the Fermi level and ultimately resulting in overlapping of the energy levels. At 823 K, the (Mn0.985V0.015) (Si0.99Al0.01)1.79 + 20% CrSi2 composite achieved a peak zT value of 0.72, a 71.4% enhancement over the pristine MnSi1.79 matrix. Consequently, synergistic cation–anion site engineering coupled with nanostructured composite design provides an effective strategy for enhancing the TE performance of HMSs, leveraging defect-mediated carrier optimization and phonon scattering intensification.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"5 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147681563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Epitaxial growth of topological insulator β -Ag2Te thin films","authors":"Ayuki Takegawa, Kouya Imoto, Minoru Kawamura, Moeta Tsukamoto, Ryutaro Yoshimi","doi":"10.1063/5.0310066","DOIUrl":"https://doi.org/10.1063/5.0310066","url":null,"abstract":"We report epitaxial growth of β-Ag2Te thin films by molecular beam epitaxy. β-Ag2Te, recently identified as a topological insulator, was grown by depositing Ag on an InP substrate at room temperature, followed by Te supply at an elevated temperature. X-ray diffraction measurements and transmission electron microscopy analyses confirmed the (002) crystal orientation and the epitaxial atomic arrangement of β-Ag2Te thin films. Electrical transport measurements revealed that the β-Ag2Te thin film exhibits two-dimensional metallic conduction while the bulk remains insulating. The epitaxial β-Ag2Te thin films obtained here provide a viable platform for investigating emergent phenomena arising from surface Dirac states and for designing heterojunction-based device structures.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"1 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147681568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Monolayer WSe2 films synthesized by confined-space chemical vapor deposition","authors":"Haihang Sun, Xinyao Liu, Yuhan Zhu, Zhengqiao Li, Junchi Song, Yichen Zhang, Xiaolin Liu, Feng Wang, Jia Lin, Xueying Zhan, Zhenxing Wang","doi":"10.1063/5.0327324","DOIUrl":"https://doi.org/10.1063/5.0327324","url":null,"abstract":"Tungsten diselenide (WSe2) is an important p-type two-dimensional (2D) semiconductor. However, a route to synthesize its monolayer films that simultaneously exhibit spatial uniformity, high crystalline quality, and full coverage remains elusive. Here, we demonstrate the growth of centimeter-scale uniform WSe2 monolayer films via a confined-space chemical vapor deposition method. Monolayer WSe2 films can be efficiently synthesized with minimal precursor consumption within 5 min. Crystalline structure analysis and spectroscopy measurements, together with the statistically analyzed transfer curves of an array of 25 transistors, confirm the good uniformity of the WSe2 film. This approach provides a scalable route to produce large-scale, homogeneous WSe2 films, which are crucial for electronic and integrated-circuit applications based on 2D semiconductors.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"92 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147681623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ryo Enari, Hiroyuki Ueda, Kazuyoshi Yoshii, Yosuke Ito
{"title":"Simulation study of low-field proton magnetic resonance spectroscopy using optically pumped magnetometers","authors":"Ryo Enari, Hiroyuki Ueda, Kazuyoshi Yoshii, Yosuke Ito","doi":"10.1063/5.0322432","DOIUrl":"https://doi.org/10.1063/5.0322432","url":null,"abstract":"We numerically investigated the feasibility of low-field magnetic resonance spectroscopy (MRS) using optically pumped magnetometers (OPMs). Low magnetic fields reduce signal strength and spectral resolution, challenging reliable metabolite quantification. To address these issues, we performed Bloch-equation–based simulations at 0.01–7 T using aqueous phantoms. We compared chemical shift selective and inversion recovery (IR) methods for water suppression. We also evaluated signal detection using both radio frequency coils and OPMs. The IR method, relying on T1 contrast rather than frequency selectivity, effectively suppressed water signals down to 0.1 T. The signal-to-noise ratio (SNR) of Glu increased below 0.7 T. OPMs maintained nearly constant SNR across 0.01–1 T and outperformed coils below 1 T. In mixed-metabolite settings, however, spectral overlap and IR-induced co-suppression impaired detection—particularly for Gln below 0.1 T. These results show that IR and OPMs offer complementary advantages for low-field MRS, while spectral resolution remains a challenge. This work provides a theoretical basis for enhancing low-field MRS techniques and expanding access to metabolic diagnostics in clinical and research settings.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"19 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147681564","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Sung-Ho Park, Dongbeen Shin, Mingyun Oh, Yeongheon Yang, Gyuweon Jung, Jong-Ho Lee
{"title":"Retention improvement in vertical NAND flash memory using block soft erase scheme","authors":"Sung-Ho Park, Dongbeen Shin, Mingyun Oh, Yeongheon Yang, Gyuweon Jung, Jong-Ho Lee","doi":"10.1063/5.0310928","DOIUrl":"https://doi.org/10.1063/5.0310928","url":null,"abstract":"We propose a block soft erase method to enhance the retention characteristics of vertical NAND (V-NAND) flash memory while significantly reducing soft erase time. Unlike prior incremental-step-pulse-erasing-based approaches that adjust each cell individually, the proposed method applies a single soft erase pulse to all cells simultaneously. Experimental results using commercial triple-level-cell V-NAND flash memory show that the block soft erase method enables Vth tuning across multiple program-verify levels (PVs), even under cell-to-cell variation due to word-line position and string differences. Retention characteristics measured at 85 °C demonstrated a 21.6% improvement at PV7 after 104 s.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"22 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147681567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A light-switchable polarity retina-inspired phototransistor for adaptive photo-sensing","authors":"Mengyao Zhang, Yifei Hu, Ying Wang, Leiming Yu, Suicai Zhang, Xiaohui Song, Junna Zhang, Yurong Jiang, Congxin Xia","doi":"10.1063/5.0327608","DOIUrl":"https://doi.org/10.1063/5.0327608","url":null,"abstract":"The limited dynamic range and fixed response polarity of conventional photodetectors pose significant challenges for machine vision in real-world, rapidly changing illumination, leading to either blindness in low light or saturation in glare. We present a retina-inspired phototransistor based on a CdS–MoS2 van der Waals heterojunction that exhibits light-intensity-switchable photo-response polarity, enabled by gate-tunable charge recombination/injection dynamics. The device seamlessly integrates optical encryption and adaptive noise filtering in a single platform, achieving a 94.2% digit recognition accuracy under high glare. This work demonstrates a single-device platform that synergistically integrates adaptive perception, secure communication, and neuromorphic preprocessing, offering a compact and energy-efficient hardware solution for next-generation intelligent vision systems in robotics, surveillance, and human–machine interfaces.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"9 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147681619","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Di Fan, Yonglan Hou, Tongfei Zhang, Hong Zhou, Qianyi Li, Yi Zhang, Congbing Tan
{"title":"Flexoelectric-stabilized hierarchical polar bubbles in wrinkled ferroelectric CuInP2S6","authors":"Di Fan, Yonglan Hou, Tongfei Zhang, Hong Zhou, Qianyi Li, Yi Zhang, Congbing Tan","doi":"10.1063/5.0326857","DOIUrl":"https://doi.org/10.1063/5.0326857","url":null,"abstract":"The realization of complex, high-order topological textures in ferroelectrics typically relies on demanding epitaxial growth under substrate clamping. Here, we report hierarchical polar bubbles in the van der Waals ferroelectric CuInP2S6, enabled by a facile wrinkle-induced strain-engineering strategy. Vector piezoresponse force microscopy reveals that localized wrinkled bulges generate large strain gradients, which activate a flexoelectric-assisted polarization reversal and form a macroscopic polar envelope. This macro-bubble encapsulates pre-existing intrinsic ferroelectric nanodomains, resulting in a distinctive nested bubble-in-a-bubble hierarchical architecture. Statistical analysis indicates that the formation probability decreases with increasing flake thickness, providing strong evidence for a strain-gradient-dominated flexoelectric origin. Real-time in situ manipulation demonstrates the mechanical recoverability of these hierarchical states under external loading. This work introduces a novel form of ferroelectric topology and establishes a mechanical pathway for designing resilient functional elements for next-generation straintronic devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"6 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147682038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Phu-Quan Pham, Ngoc-Lam Pham Le, Thuy-Anh Tran, Van-Son Dang, Quang Nguyen, Ngoc Kim Pham, Thuat Nguyen-Tran
{"title":"Non-pinched hysteresis in CrO x /TiO y -based memristive devices: Modeling and analysis","authors":"Phu-Quan Pham, Ngoc-Lam Pham Le, Thuy-Anh Tran, Van-Son Dang, Quang Nguyen, Ngoc Kim Pham, Thuat Nguyen-Tran","doi":"10.1063/5.0332014","DOIUrl":"https://doi.org/10.1063/5.0332014","url":null,"abstract":"Transition-metal oxide memristors are promising for neuromorphic computing, yet most SPICE models overlook material-specific effects such as oxygen stoichiometry and non-pinched hysteresis. Here, we systematically study CrOx/TiOy memristors fabricated under controlled oxygen concentrations (10%–50%) and propose an improved SPICE-compatible model. The devices exhibit oxygen-dependent resistive switching, retention, and pulse-driven plasticity, with optimal performance at 40% oxygen. Our model explicitly reproduces the non-pinched hysteresis observed in I–V curves, consistent with behaviors such as ion immigration, charge trapping, and remnant polarization, and achieves close agreement with experiments across multiple stoichiometries. Validation includes endurance, retention, and synaptic functions such as long-term potentiation/depression and spike-number/amplitude-dependent plasticity. Finally, the model is extended from single devices to a 4 × 4 crossbar array, demonstrating its scalability for artificial neural network simulations. These results emphasize the critical role of oxygen stoichiometry in CrOx/TiOy memristors and introduce a modeling framework that bridges experimental device physics with circuit-level neuromorphic applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"24 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147681620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Fan Zhang, Wentao Hou, Youchenchen Zhou, Qingguo Wang, Chenbo Zhang, Bo Liu, Xiaodong Xu, Huili Tang, Wudi Wang, Jun Xu
{"title":"Effective modulation of emission dynamics in Er:CaF2 crystal via oxygen anion engineering","authors":"Fan Zhang, Wentao Hou, Youchenchen Zhou, Qingguo Wang, Chenbo Zhang, Bo Liu, Xiaodong Xu, Huili Tang, Wudi Wang, Jun Xu","doi":"10.1063/5.0326861","DOIUrl":"https://doi.org/10.1063/5.0326861","url":null,"abstract":"In Er3+-doped CaF2 crystals, strong upconversion processes promote higher-lying emissions while limiting the population of the 4I13/2 level, undermining its 1.5 μm laser potential. In this work, we demonstrate that anion engineering through oxygen incorporation into Er:CaF2 allows manipulation of the erbium emission dynamics, significantly suppressing upconversion losses. Specifically, O2− is introduced as a charge-compensator in place of interstitial Fi− and shown to be favorably paired with Er3+ by first-principles calculations, which yields adjacent vacancy defects that serve as energy sinks for mid-infrared transitions. This structural modification provides an inhibitor for interrupting upconversion pathways and redirecting population to the 4I13/2 level. Moreover, robust 1.5 μm emission is preserved due to the suppressed formation of erbium clusters. These findings highlight the role of anion dopants in the modulation of structure–property relationships, thereby enabling effective tuning of the emission properties of optical materials.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"278 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147681621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}