Applied Physics Letters最新文献

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The impact of laser and growth rate on trap formation in conventional and laser-assisted MOCVD GaN 激光和生长速率对常规和激光辅助MOCVD GaN中陷阱形成的影响
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2025-10-07 DOI: 10.1063/5.0276417
Wenbo Li, Yuxuan Zhang, Vijay Gopal Thirupakuzi Vangipuram, Hongping Zhao, Steven A. Ringel, Aaron R. Arehart
{"title":"The impact of laser and growth rate on trap formation in conventional and laser-assisted MOCVD GaN","authors":"Wenbo Li, Yuxuan Zhang, Vijay Gopal Thirupakuzi Vangipuram, Hongping Zhao, Steven A. Ringel, Aaron R. Arehart","doi":"10.1063/5.0276417","DOIUrl":"https://doi.org/10.1063/5.0276417","url":null,"abstract":"A systematic deep-level transient and optical spectroscopy study indicated the relationship between trap concentrations and the growth rate of metal–organic chemical vapor deposition (MOCVD) GaN. The EC-0.57, EC-0.72, and EC-0.9 eV traps were generally insensitive to the growth rate, while the C-related EC-1.35 and EC-3.28 eV traps and the VGa- and/or C-related EC-2.6 eV trap increased monotonically over the growth rate. The C/VGa-related traps are also responsible for the doping compensation in high-growth-rate MOCVD GaN. The laser-assisted MOCVD displayed potential in suppressing trap formation without sacrificing the high growth rate, paving the way for future thick vertical GaN applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"18 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145234979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Deactivating charged states in colloidal quantum dots by Förster resonance energy transfer 通过Förster共振能量转移使胶体量子点中的带电态失活
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2025-10-07 DOI: 10.1063/5.0276307
Mi Gu, Depeng Li, Jingrui Ma, Lei Jin, Lars Samuelson, Xiao Wei Sun
{"title":"Deactivating charged states in colloidal quantum dots by Förster resonance energy transfer","authors":"Mi Gu, Depeng Li, Jingrui Ma, Lei Jin, Lars Samuelson, Xiao Wei Sun","doi":"10.1063/5.0276307","DOIUrl":"https://doi.org/10.1063/5.0276307","url":null,"abstract":"Colloidal quantum dots (QDs) possess size/shape/surface-tunable optical and electronic properties, making them promising building blocks for optoelectronic applications. However, the fluorescence intermittency, also known as “blinking,” observed in individual QDs is a pervasive phenomenon. The dark state (trion state) in blinking experiences non-radiative recombination processes, such as trap-mediated recombination and Auger–Meitner recombination, which significantly diminish the quantum efficiency of the QDs. Despite efforts to mitigate blinking phenomena through chemical engineering of QDs structures and their environments, blinking continues to impede the application of single QDs, particularly in single photon sources. This study demonstrates that Förster resonance energy transfer (FRET) from green QDs (donor) to individual red QDs (acceptor) can effectively suppress fluorescence intermittency. The findings indicate that FRET facilitates the removal of excess charges from the charged state (dark state, trion state), allowing the QDs to transition from the lower quantum yield trion state to the higher quantum yield single-exciton state (bright state). Our research confirms that FRET can inhibit fluorescence intermittency by deactivating the charged state.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"8 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145234978","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Enhanced channel mobility of hexagonal boron nitride/hydrogen-terminated diamond heterojunction field-effect transistor 六方氮化硼/端氢金刚石异质结场效应晶体管的沟道迁移率增强
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2025-10-07 DOI: 10.1063/5.0272041
Yosuke Sasama, Takuya Iwasaki, Masataka Imura, Kenji Watanabe, Takashi Taniguchi, Yamaguchi Takahide
{"title":"Enhanced channel mobility of hexagonal boron nitride/hydrogen-terminated diamond heterojunction field-effect transistor","authors":"Yosuke Sasama, Takuya Iwasaki, Masataka Imura, Kenji Watanabe, Takashi Taniguchi, Yamaguchi Takahide","doi":"10.1063/5.0272041","DOIUrl":"https://doi.org/10.1063/5.0272041","url":null,"abstract":"Hydrogen-terminated diamond field-effect transistors (FETs) using a hexagonal boron nitride (h-BN) gate insulator were fabricated on a diamond surface with reduced surface roughness in the direction of source/drain electrodes. The diamond surface was prepared on a mesa structure using chemical vapor deposition with a low methane concentration. The hydrogen-terminated surface was laminated with the h-BN gate insulator without air exposure to prevent the adsorption of atmospheric surface acceptors. The hydrogen-terminated diamond FET exhibited a high mobility of ≈1000 cm2 V−1 s−1 at room temperature. We performed theoretical analysis on the temperature and carrier density dependences of mobility, which suggested that Coulomb and surface roughness scattering were effectively reduced. The high mobility obtained in this study indicates the high potential of diamond as a semiconducting material. This study can contribute to the future development of diamond devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"10 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145234981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dipole-molecular buffer interface engineering for mitigating hole injection barrier and interface defect in high-efficiency quasi-2D blue perovskite light-emitting diodes 高效准二维蓝钙钛矿发光二极管空穴注入势垒和界面缺陷的偶极子-分子缓冲界面工程
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2025-10-07 DOI: 10.1063/5.0287351
Hongxin Liu, Zhewei Li, Yuxia Mei, Min Gong, Sijie Zhang
{"title":"Dipole-molecular buffer interface engineering for mitigating hole injection barrier and interface defect in high-efficiency quasi-2D blue perovskite light-emitting diodes","authors":"Hongxin Liu, Zhewei Li, Yuxia Mei, Min Gong, Sijie Zhang","doi":"10.1063/5.0287351","DOIUrl":"https://doi.org/10.1063/5.0287351","url":null,"abstract":"The quasi-two-dimensional (quasi-2D) perovskites, characterized by strong quantum confinement and high exciton binding energy, hold significant promise for blue perovskite light-emitting diodes (PeLEDs). However, challenges including imbalanced charge injection and defect-related nonradiative recombination at the interface, particularly at the hole transport layer (HTL)/perovskite interface, hinder the development of efficient PeLEDs. This investigation systematically evaluates the effect of various dipolar molecules on the HTL/perovskite interface, aiming to enhance the efficiency of blue PeLEDs. The results indicate that the hole injection barrier of devices modified with diethyl difluoromethanephosphonate (DFMP) was significantly reduced due to the high polarity of DFMP, which maintains a balanced hole–electron mobility. Furthermore, the electron-rich P=O bond in DFMP effectively coordinates with the unsaturated Pb2+ at the buried interface to passivate defects that contribute to radiative recombination. As a result, the DFMP-modified PeLEDs achieve a peak external quantum efficiency of 9.8% at 480 nm and a prolonged operational lifetime. The study paves the way for interfacial molecular buffer layers to interface modulation in quasi-2D PeLEDs.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"112 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145241460","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Polarization-resolved surface and bulk states in CsPbBr3 single crystals via second harmonic generation 通过二次谐波产生CsPbBr3单晶的偏振分辨表面和体态
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2025-10-06 DOI: 10.1063/5.0291184
Shixiong Zhang, Weizhi Yu, Junkang Wu, Yingming Song, Ruiming Li, Hongri Liu, Meifeng Liu, Weikun Ge, Ning Tang
{"title":"Polarization-resolved surface and bulk states in CsPbBr3 single crystals via second harmonic generation","authors":"Shixiong Zhang, Weizhi Yu, Junkang Wu, Yingming Song, Ruiming Li, Hongri Liu, Meifeng Liu, Weikun Ge, Ning Tang","doi":"10.1063/5.0291184","DOIUrl":"https://doi.org/10.1063/5.0291184","url":null,"abstract":"Due to their superior electronic and optical properties, halide perovskite single crystals have been potential candidates for developing high-efficiency optoelectronic devices. Defect states located on the surface or within the bulk of single crystals play a crucial role in determining the performance of devices. In this work, the surface and bulk states in CsPbBr3 single crystals were investigated by polarization-resolved second harmonic generation (SHG) measurements. Onefold anisotropy of SHG intensity indicates that the polycrystalline Cs4PbBr6 and CsPb2Br5 phases dominate the surface, which exhibits Cs symmetry. Moreover, an unpolarized and strong luminescence was observed induced by two-photon absorption, which displays a twofold symmetry. Br vacancies within the bulk were identified as the radiative recombination centers according to their energy level position. These experimental results not only establish a method for distinguishing between surface and bulk states but also facilitate a deeper understanding of the optical properties of defect states in CsPbBr3 single crystals.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"21 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145235030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Monolithic integrated β -Ga2O3 inverters using charge trapping technique 利用电荷俘获技术的单片集成β -Ga2O3逆变器
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2025-10-06 DOI: 10.1063/5.0287286
MuJun Li, MingHao He, XiaoHui Wang, Yang Jiang, HaoZhe Yu, ChenKai Deng, Kah-Wee Ang, Qing Wang, HongYu Yu
{"title":"Monolithic integrated β -Ga2O3 inverters using charge trapping technique","authors":"MuJun Li, MingHao He, XiaoHui Wang, Yang Jiang, HaoZhe Yu, ChenKai Deng, Kah-Wee Ang, Qing Wang, HongYu Yu","doi":"10.1063/5.0287286","DOIUrl":"https://doi.org/10.1063/5.0287286","url":null,"abstract":"In this work, high-performance monolithic integrated β-Ga2O3 inverters are proposed, in which the enhancement mode (E-mode) devices are implemented using a charge trapping layer (CTL) technique. Leveraging the threshold voltage tunability of the CTL-based E-mode devices, the inverters demonstrate robust operation across a wide range (5–18 V) of supply voltage (VDD). In addition, the inverter with a β value of 40 achieves an ultralow output low voltage (VOL = 0.01 V) at VDD of 18 V, as well as excellent output swing/VDD ratio (17.99 V/18 V), noise margin capability (NML/NMH = 7.65 V/7.55 V), maximum voltage gain (9.6 V/V), and maximum power consumption (3.7 × 10−4 W). Furthermore, dynamic testing was further conducted to investigate the relationship between the dimensional matching of E/D-mode devices and key parameters such as transmission delay and output characteristics. These findings provide insights into the fabrication of monolithic integrated β-Ga2O3 inverters.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"3 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145228943","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Tailoring energy storage performance of BaTiO3–CeO2 lead-free films via nanostructure design and crystalline orientation 通过纳米结构设计和晶体取向调整BaTiO3-CeO2无铅薄膜的储能性能
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2025-10-06 DOI: 10.1063/5.0294093
Zhengyang Kong, Yufan Guo, Zhen Huang, Kun Han, Liqiang Xu
{"title":"Tailoring energy storage performance of BaTiO3–CeO2 lead-free films via nanostructure design and crystalline orientation","authors":"Zhengyang Kong, Yufan Guo, Zhen Huang, Kun Han, Liqiang Xu","doi":"10.1063/5.0294093","DOIUrl":"https://doi.org/10.1063/5.0294093","url":null,"abstract":"Relaxor ferroelectrics are promising for high-performance energy storage applications, particularly in miniaturized electronic devices and power systems. Herein, we investigate the influence of CeO2 doping on the structural and polarization behavior of (1 − x)BaTiO3−xCeO2 [(1 − x)BT−xC, 0.0 ≤ x ≤ 0.5] films. Our results show that the incorporation of CeO2 into BaTiO3 matrix induces chemical and structural heterogeneity, which effectively suppresses hysteresis, achieving a large energy storage density Ue of ∼37.6 J/cm3 and a high efficiency η of ∼80% for 0.7BT-0.3C films grown on Nb-SrTiO3 (001) substrates. The orientation control further refined the energy storage properties, with 0.7BT-0.3C films grown on (110)- and (111)-oriented Nb-SrTiO3 substrates exhibiting improved Ue of 44.8 and 46.8 J/cm3. The frequency and thermal stability analyses revealed that the nanostructured BaTiO3-based films maintained stable energy storage performance across a wide frequency range from 20 Hz to 10 kHz, and temperature range from 25 to 160 °C. These findings suggest the potential of nanostructure engineering and orientation control in improving the energy storage performance of BaTiO3-based films for advanced applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"26 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145235025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A highly efficient photodetector for squeezed light measurement in the gigahertz range 用于千兆赫范围内压缩光测量的高效光电探测器
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2025-10-06 DOI: 10.1063/5.0290396
Dennis Wilken, Jonas Junker, Michèle Heurs
{"title":"A highly efficient photodetector for squeezed light measurement in the gigahertz range","authors":"Dennis Wilken, Jonas Junker, Michèle Heurs","doi":"10.1063/5.0290396","DOIUrl":"https://doi.org/10.1063/5.0290396","url":null,"abstract":"Squeezed light plays a crucial role in state-of-the-art quantum metrology and quantum information experiments. There is significant interest in utilizing squeezed states at high MHz and GHz frequencies. However, past efforts to build suitable photodetectors at these frequencies have yet to yield the required high quantum efficiency. Here, we present the development of a high-frequency balanced photodetector with near-unity quantum efficiency, realized with off-the-shelf components. The detector operates in balanced mode up to approximately 500 MHz, above which the differential frequency response limits its performance. To obtain high sensitivity above 500 MHz, the detector can be efficiently used in an unbalanced homodyne detection scheme. We employ our detector in this unbalanced mode to measure a squeezing comb up to 6.4 GHz, achieving a squeezing level of up to 10.7 dB. By sharing our experience, specifically in identifying the unequal frequency response as a limiting factor, we aim to enable and advance further developments in the field.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"30 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145235026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A postbuckling-based metamaterial for switching the propagation of surface acoustic waves 一种用于转换表面声波传播的基于后屈曲的超材料
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2025-10-06 DOI: 10.1063/5.0297652
F. Aloschi, F. Zeighami, A. Palermo, C. Daraio
{"title":"A postbuckling-based metamaterial for switching the propagation of surface acoustic waves","authors":"F. Aloschi, F. Zeighami, A. Palermo, C. Daraio","doi":"10.1063/5.0297652","DOIUrl":"https://doi.org/10.1063/5.0297652","url":null,"abstract":"The use of periodic materials for wave control and signal processing has been a focus of intensive research over the past two decades and continues to garner significant attention. Common signal processing mechanisms like switches and rectifiers often depend on magnetic fields and/or logic gates for their activation. We propose a metamaterial that enables the control of mechanical waves—surface acoustic waves—through an ON–OFF mechanism that switches the propagation of the waves through a tunable platform of elastic beams. In the OFF configuration, the beams remain in their undeformed state and resonate at a specific frequency range, creating a bandgap that stops wave propagation. Conversely, in the ON configuration, the beams undergo buckling, redistributing the vibration energy across multiple modes and eliminating the bandgap, thus allowing wave propagation. Analytical and numerical findings demonstrate the significant potential of this mechanism for controlling wave propagation in nonlinear periodic materials. This switching mechanism relies purely on mechanical processes, thereby eliminating the need for external fields.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"41 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145235027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Multifunctional hole transport layer enhances high-performance pure-red perovskite quantum-dot light-emitting diodes 多功能空穴传输层增强了高性能纯红钙钛矿量子点发光二极管
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2025-10-06 DOI: 10.1063/5.0284362
Shuyan Fang, Zhichao Chen, Xuanang Luo, Chenhui Su, Lei Ying, Shijian Su, Jibin Zhang, Ziyang Hu, Lintao Hou
{"title":"Multifunctional hole transport layer enhances high-performance pure-red perovskite quantum-dot light-emitting diodes","authors":"Shuyan Fang, Zhichao Chen, Xuanang Luo, Chenhui Su, Lei Ying, Shijian Su, Jibin Zhang, Ziyang Hu, Lintao Hou","doi":"10.1063/5.0284362","DOIUrl":"https://doi.org/10.1063/5.0284362","url":null,"abstract":"The performance of perovskite light-emitting diodes (PeLEDs) has advanced rapidly; however, the development of suitable hole transport layers (HTLs) for PeLEDs remains a critical challenge. This study introduces a multifunctional HTL of poly[(9,9-dioctylfluorenyl-2,7-diyl)-alt-(4,4′-(N-(4-[2-[2-(2-methoxyethoxy)ethoxy]ethoxy]phenyl)diphenylamine))] (TFTEG), which features a backbone similar to that of the commercial hole transport material poly[(9,9-dioctylfluorenyl-2,7-diyl)-alt-(4,4′-(N-(4-sec-butylphenyl)diphenylamine))] (TFB), while its side chain is modified to include multiple ether groups. Theoretical calculations and experimental characterizations demonstrate that TFTEG not only significantly enhances hole injection but also effectively passivates uncoordinated Pb2+ defects at the buried interface through Lewis acid–base interactions. This substantially improves the photoluminescence and electroluminescence (EL) quantum yields of perovskite quantum dots (QDs). Pure-red quantum-dot PeLEDs that employ TFTEG as the HTL achieve a maximum external quantum efficiency of 9.67%, which signifies a substantial enhancement over the 4.56% efficiency observed in control devices utilizing the commercial TFB HTL. Furthermore, TFTEG contributes to a reduced turn-on voltage, enhanced brightness (1741 vs 888 cd m−2), and a stable EL spectrum peaking at 650 nm. The rapid response characteristics underscore its promising potential for high-speed optoelectronic applications, such as wireless communication systems.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"111 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145235028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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