Applied Physics Letters最新文献

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A non-invasive dry-transfer method for fabricating mesoscopic devices on sensitive materials 一种用于在敏感材料上制造介观装置的非侵入式干转移方法
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2025-06-18 DOI: 10.1063/5.0263946
Zhongmou Jia, Yiwen Ma, Zhongchen Xu, Xue Yang, Jianfei Xiao, Jiezhong He, Yunteng Shi, Zhiyuan Zhang, Duolin Wang, Sicheng Zhou, Bingbing Tong, Peiling Li, Ziwei Dou, Xiaohui Song, Guangtong Liu, Jie Shen, Zhaozheng Lyu, Youguo Shi, Jiangping Hu, Li Lu, Fanming Qu
{"title":"A non-invasive dry-transfer method for fabricating mesoscopic devices on sensitive materials","authors":"Zhongmou Jia, Yiwen Ma, Zhongchen Xu, Xue Yang, Jianfei Xiao, Jiezhong He, Yunteng Shi, Zhiyuan Zhang, Duolin Wang, Sicheng Zhou, Bingbing Tong, Peiling Li, Ziwei Dou, Xiaohui Song, Guangtong Liu, Jie Shen, Zhaozheng Lyu, Youguo Shi, Jiangping Hu, Li Lu, Fanming Qu","doi":"10.1063/5.0263946","DOIUrl":"https://doi.org/10.1063/5.0263946","url":null,"abstract":"Many materials with novel or exotic properties are highly sensitive to environmental factors such as air, solvents, and heat, which complicate device fabrication and limit their potential applications. Here, we present a universal sub-micrometer fabrication method for mesoscopic devices using a dry-transfer technique, tailored specifically for sensitive materials. This approach utilizes PMMA masks, combined with a water-dissoluble coating as a sacrificial layer, to ensure that sensitive materials are processed without exposure to harmful environmental conditions. The entire fabrication process is carried out in a glovebox, employing dry techniques that avoid air, solvents, and heat exposure, culminating in an encapsulation step. We demonstrate the utility of this method by fabricating and characterizing K2Cr3As3 and WTe2 devices, a one- and two-dimensional material, respectively. The results show that our technique preserves the integrity of the materials, provides excellent contact interfaces, and is broadly applicable to a range of sensitive materials.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"626 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144319442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The in-plane anisotropy of topological semimetal Nb3SiTe6 investigated by angle-resolved polarized Raman spectroscopy 用角分辨偏振拉曼光谱研究了拓扑半金属Nb3SiTe6的面内各向异性
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2025-06-18 DOI: 10.1063/5.0269647
Qinghang Liu, Xiaolan Zhang, Peng Zhu, Wenjian Lai, Yuxiang Chen, Xiang Li, Zhiwei Wang, Qinsheng Wang
{"title":"The in-plane anisotropy of topological semimetal Nb3SiTe6 investigated by angle-resolved polarized Raman spectroscopy","authors":"Qinghang Liu, Xiaolan Zhang, Peng Zhu, Wenjian Lai, Yuxiang Chen, Xiang Li, Zhiwei Wang, Qinsheng Wang","doi":"10.1063/5.0269647","DOIUrl":"https://doi.org/10.1063/5.0269647","url":null,"abstract":"The in-plane anisotropy of the layered topological semimetal Nb3SiTe6, owing to its unique lattice structure and nontrivial electronic states, may play an important role in low-power, multifunctional optoelectronic devices by regulating anisotropy, and provide an ideal research platform for exploring quantum phenomena such as chiral anomaly and quantum Hall effect. In the above-mentioned research related to material anisotropy, it is necessary to determine the crystallographic orientation of thin-layer samples. In this paper, we systematically studied the optical in-plane anisotropy of the layered topological semimetal Nb3SiTe6 via angle-resolved polarized Raman spectroscopy. The Raman intensities of the 13 Raman peaks show clear polarization dependence. Based on the lattice symmetry of multilayer Nb3SiTe6, we accurately distinguished the two Raman modes of Nb3SiTe6 and corresponding Raman peaks. In addition, we proposed a method for quickly, accurately, and nondestructively determining the crystallographic orientation of multilayer Nb3SiTe6 by polarized Raman spectroscopy. This work provides a crucial foundation for exploring potential applications of the anisotropy of Nb3SiTe6 in thermoelectric and optoelectronic fields.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"15 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144319440","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Epitaxial strain reconfiguration of AlGaN multiple heterojunctions for high-responsivity high-speed UV detection 用于高响应高速紫外检测的AlGaN多异质结外延应变重构
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2025-06-17 DOI: 10.1063/5.0264751
Zesheng Lv, Zhuoya Peng, Yv Yin, Keqi Liu, Shouqiang Yang, Gang Wang, Hao Jiang
{"title":"Epitaxial strain reconfiguration of AlGaN multiple heterojunctions for high-responsivity high-speed UV detection","authors":"Zesheng Lv, Zhuoya Peng, Yv Yin, Keqi Liu, Shouqiang Yang, Gang Wang, Hao Jiang","doi":"10.1063/5.0264751","DOIUrl":"https://doi.org/10.1063/5.0264751","url":null,"abstract":"Achieving simple and efficient strain engineering remains a persistent challenge in AlGaN-based material and device research, thereby substantially hampering the realization of the inherent material advantages. In this study, a strain reconfiguration strategy utilizing a medium-temperature AlN (MT-AlN) interlayer is proposed. By optimizing the MT-AlN thickness at 1000 °C, tensile strain originating from the GaN template is systematically released through interfacial relaxation and lattice redistribution within the interlayer. Additionally, the engineered configuration also establishes a coherent crystalline template with programmable strain states for subsequent epitaxial growth. With a 25-nm optimized interlayer, crack-free Al0.35 ∼ 0GaN multiple heterojunctions are epitaxially grown on the GaN template with slight compressive strain and nearly no additional dislocations. The resultant high-crystallinity AlGaN heterostructures enable the UV photodetector to achieve high responsivity (maximum 1.4 × 103 A/W), ultrafast response speed (0.6/25.4 ns rise/fall time), and remarkable operational stability simultaneously. All these collectively validate the MT-AlN strain reconfiguration as a viable pathway for the advancement of AlGaN-based optoelectronic devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"45 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144311348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A magneto-optically pumped cesium beam clock using monochromatic light 使用单色光的磁光泵浦铯束时钟
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2025-06-17 DOI: 10.1063/5.0268775
Chen Liu, Yuanhao Li, Tingxuan Xiang, Chen Feng, Hangzhe Lyu, Chaojie Li, Yanhui Wang
{"title":"A magneto-optically pumped cesium beam clock using monochromatic light","authors":"Chen Liu, Yuanhao Li, Tingxuan Xiang, Chen Feng, Hangzhe Lyu, Chaojie Li, Yanhui Wang","doi":"10.1063/5.0268775","DOIUrl":"https://doi.org/10.1063/5.0268775","url":null,"abstract":"Compact cesium beam clocks are widely utilized in various applications. In contemporary commercial cesium clocks, two primary approaches are employed: the magnetically selected state scheme and the optical pumping scheme. Here, we propose a magneto-optically pumped cesium beam clock with a frequency stability of 2.3×10−12τ−1/2. In this scheme, the pumping light and state selection magnet are both used for the preparation of atomic states. In the magnetic field of the state selection magnet, the relationship between pumping efficiency and laser frequency, laser power, and laser position has been investigated. Eventually, we find a position that allows the laser to resonate with cyclic transition line |F=3⟩−|F′=2⟩ to pump almost all of the atoms |F=3⟩ to state |F=4⟩. Therefore, we can pump and detect atoms without the use of an AOM. This approach not only combines the advantage of low atomic velocity from the magnetically selected state scheme and the high atomic utilization efficiency from the optical pumping scheme but also simplifies the scheme of optically pumped cesium beam clock. In addition, this physical system can also facilitate the investigation of the shift in cesium atomic energy levels under strong magnetic fields.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"11 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144311355","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Transition from edge- to bulk-currents in the quantum Hall regime 量子霍尔区从边缘电流到体电流的跃迁
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2025-06-17 DOI: 10.1063/5.0275599
S. Sirt, V. Y. Umansky, A. Siddiki, S. Ludwig
{"title":"Transition from edge- to bulk-currents in the quantum Hall regime","authors":"S. Sirt, V. Y. Umansky, A. Siddiki, S. Ludwig","doi":"10.1063/5.0275599","DOIUrl":"https://doi.org/10.1063/5.0275599","url":null,"abstract":"The integer quantum Hall effect can be observed in a two-dimensional conductor penetrated by a perpendicular magnetic field and with edges connecting the current carrying contacts. Its signature is a state of quantized Hall and simultaneously vanishing longitudinal resistances. A widely accepted model is the Landauer–Büttiker picture, which assumes an incompressible, i.e., electrically insulating bulk state surrounded by current carrying one-dimensional edge channels. This single-particle model is challenged by the screening theory. It derives that electron–electron interaction leads to a fragmentation of the Hall bar into compressible and incompressible strips, where the current flows inside the incompressible strips. Because the latter gradually shifts from the sample edges into the bulk as the magnetic field is increased, it suggests a transition from edge- to bulk-current. We present direct experimental proof of this transition. Our results support the screening theory.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"6 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144311377","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modulation of interlayer coupling in bilayer MoS2 through Li+ intercalation Li+嵌入对双层MoS2层间耦合的调制
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2025-06-17 DOI: 10.1063/5.0274168
Xiaoyue Fan, Ziling Shen, Haochen Zhang, Hanting Li, Yuqing Zheng, Wenchen Yang, Di Lin, Chong Wang, Gang Wang
{"title":"Modulation of interlayer coupling in bilayer MoS2 through Li+ intercalation","authors":"Xiaoyue Fan, Ziling Shen, Haochen Zhang, Hanting Li, Yuqing Zheng, Wenchen Yang, Di Lin, Chong Wang, Gang Wang","doi":"10.1063/5.0274168","DOIUrl":"https://doi.org/10.1063/5.0274168","url":null,"abstract":"The interlayer coupling of layered two-dimensional (2D) materials plays a crucial role in their physical properties. As an additional degree of freedom of 2D materials, the modulation of interlayer distance has emerged as a prominent research focus. In this work, we modulated the interlayer distance of bilayer MoS2 by introducing lithium ions (Li+) through intercalation, thereby changing the interlayer coupling. Experimental results reveal significant responses in the absorption peaks of both intra- and interlayer excitons following Li+ intercalation. Specifically, the energy difference between A and B excitons decreased, and the oscillator strength of interlayer excitons diminished. The deduced interlayer distance expanded from 0.60 to 0.62 nm, confirming the intercalation of Li+. The electrical measurements and differential reflectance spectra demonstrated the reversibility of this intercalation process. These findings offer a dedicated strategy for modulating the excitonic states by controlling the interlayer distance in van der Waals (vdW) bilayer systems.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"87 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144311527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Sb2S3 Mie-resonant dielectric metasurfaces for tunable near infrared filtering 用于可调谐近红外滤波的Sb2S3微波谐振介电超表面
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2025-06-17 DOI: 10.1063/5.0274375
A. Podpirka, G. Hunt, R. Bruce, C. Gutgsell, S. Kim, J. Miragliotta, D. Shrekenhamer
{"title":"Sb2S3 Mie-resonant dielectric metasurfaces for tunable near infrared filtering","authors":"A. Podpirka, G. Hunt, R. Bruce, C. Gutgsell, S. Kim, J. Miragliotta, D. Shrekenhamer","doi":"10.1063/5.0274375","DOIUrl":"https://doi.org/10.1063/5.0274375","url":null,"abstract":"The field of metasurface optics is well-suited to leverage advanced materials due to their unique ability to tailor light–matter interactions at the sub-wavelength scale, providing a high degree of dynamic functionality. In this Letter, we explore the low-loss chalcogenide-based phase change material Sb2S3 and its integration into Mie-resonant metasurfaces to realize highly tunable near-infrared transmission-based filters. Through a combination of computational modeling, fabrication, and characterization of near-infrared Sb2S3 metasurfaces, we demonstrate spectrally selective filters with high optical densities that achieve an absolute optical transmitted contrast of over 80% via thermal stimulus. Our work highlights the potential for reversible non-volatile optical writing and color filtering, tunable both passively and actively.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"606 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144311350","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Tailoring carrier management through a multifunctional additive for efficient perovskite/organic tandem solar cells 通过高效钙钛矿/有机串联太阳能电池的多功能添加剂定制载流子管理
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2025-06-17 DOI: 10.1063/5.0266387
Fawad Aslam, Hengyue Li, Jianhui Chang, Yang Ding, Fang Yang, Xiangxiang Feng, Xiang Liao, Qiang Zeng, Muhammad Zahid, Muhammad Irfan Sadiq, Muhammad Tahir, Fangyang Liu, Junliang Yang
{"title":"Tailoring carrier management through a multifunctional additive for efficient perovskite/organic tandem solar cells","authors":"Fawad Aslam, Hengyue Li, Jianhui Chang, Yang Ding, Fang Yang, Xiangxiang Feng, Xiang Liao, Qiang Zeng, Muhammad Zahid, Muhammad Irfan Sadiq, Muhammad Tahir, Fangyang Liu, Junliang Yang","doi":"10.1063/5.0266387","DOIUrl":"https://doi.org/10.1063/5.0266387","url":null,"abstract":"The wide bandgap perovskite solar cells (PSCs) are promising candidates for high-efficiency tandem photovoltaics. However, these devices encounter challenges arising from defects within the perovskite lattice and at interfaces, which lead to non-radiative recombination and voltage losses. To address these issues, we have developed a synergistic approach that combines bulk passivation using l-cystine dihydrochloride as an additive with subsequent surface passivation treatments. This compound effectively passivates Pb2+ and halide defects through its carbonyl and amine functional groups. Both experimental and simulation results demonstrate that l-cystine dihydrochloride effectively reduces trap states, retards nucleation kinetics, promotes grain growth, and enhances crystallinity. Consequently, the device [FA0.8Cs0.2Pb(I0.6Br0.4)3, energy gap: 1.77 eV] incorporating l-cystine dihydrochloride achieved a power conversion efficiency (PCE) of approximately 16.00%, which was further increased to 17.03% with an additional octylammonium iodide surface passivation. Expanding our approach, we have fabricated the wide bandgap semitransparent device, yielding a PCE of 15.62%. When integrated with narrow-bandgap organic solar cells in four-terminal (4T) perovskite/organic tandem solar cells, a remarkable efficiency of 23.14% was attained. This strategy effectively improves the performance of wide bandgap PSCs, which exhibit great potential in advancing perovskite/organic photovoltaic technologies.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"44 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144311357","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Evidence of orbital Hall current-induced correlation in second-harmonic response of longitudinal and transverse voltage in light metal–ferromagnet bilayers 轻金属-铁磁体双层中纵向和横向电压二次谐波响应的轨道霍尔电流诱导相关性证据
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2025-06-17 DOI: 10.1063/5.0263240
Dhananjaya Mahapatra, Harekrishna Bhunia, Abu Bakkar Miah, Soumik Aon, Partha Mitra
{"title":"Evidence of orbital Hall current-induced correlation in second-harmonic response of longitudinal and transverse voltage in light metal–ferromagnet bilayers","authors":"Dhananjaya Mahapatra, Harekrishna Bhunia, Abu Bakkar Miah, Soumik Aon, Partha Mitra","doi":"10.1063/5.0263240","DOIUrl":"https://doi.org/10.1063/5.0263240","url":null,"abstract":"We investigate the effect of orbital current arising from orbital Hall effect in thin films of light metals of Nb and Ti in Ohmic contact with ferromagnetic Ni in the second-harmonic longitudinal and transverse voltages, in response to an a.c. current applied to the bilayer structures. Analogous to the experiments on heavy metal–ferromagnet bilayers, we extract the orbital Hall torque efficiency and unidirectional orbital magnetoresistance (UOMR) per unit current density. Control experiments on light metal bilayers with NiFe (permalloy) as ferromagnet and a single layer of Ni show absence of torque and suppression of UOMR, corroborating the role of Ni as an efficient converter of orbital to spin current and role of light metals as source of orbital current. We find that both orbital Hall torque efficiency and unidirectional orbital magnetoresistance are proportionately higher in Ti as compared to Nb, confirming a correlation between the two effects arising from the same orbital current in the respective light metals.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"153 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144311349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-performance Love-mode phononic crystal resonators on LiNbO3/SiC achieving an FoM of 352 基于LiNbO3/SiC的高性能Love-mode声子晶体谐振器实现了352的FoM
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2025-06-17 DOI: 10.1063/5.0274355
Yi-Han He, Zhen-Hui Qin, Hua-Yang Chen, Nan-Xin Yu, Zhi-Wen Wang, Si-Yuan Yu, Yan-Feng Chen
{"title":"High-performance Love-mode phononic crystal resonators on LiNbO3/SiC achieving an FoM of 352","authors":"Yi-Han He, Zhen-Hui Qin, Hua-Yang Chen, Nan-Xin Yu, Zhi-Wen Wang, Si-Yuan Yu, Yan-Feng Chen","doi":"10.1063/5.0274355","DOIUrl":"https://doi.org/10.1063/5.0274355","url":null,"abstract":"This Letter reports a high-performance Love-mode phononic crystal resonator (PnCR) on a LiNbO3/SiC substrate, realized by substituting conventional Bragg reflectors with phononic crystals (PnCs). This approach significantly enhances energy confinement, achieving a record figure of merit (FoM) of 352.4, currently the highest reported in thin-film surface acoustic wave (TF-SAW) devices, along with an electromechanical coupling coefficient (kt2) of 27.3% and a maximum Bode-Q (Qmax) of 1291 at 2.18 GHz. Additionally, a periodic dependence of Qmax on the spacing between PnCs and the interdigital transducers provides a valuable design guideline. These results underscore the transformative potential of PnCRs in advancing next-generation microwave acoustic devices toward higher performance and greater miniaturization.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"43 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144311351","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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