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Realizing p-type InSb with enhanced thermoelectric performance via Cd doping
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2025-01-23 DOI: 10.1063/5.0249667
Qing Wang, Zhiliang Li, Zhipeng Li, Xinqi Liu, Yuli Xue, Jianglong Wang, Shufang Wang
{"title":"Realizing p-type InSb with enhanced thermoelectric performance via Cd doping","authors":"Qing Wang, Zhiliang Li, Zhipeng Li, Xinqi Liu, Yuli Xue, Jianglong Wang, Shufang Wang","doi":"10.1063/5.0249667","DOIUrl":"https://doi.org/10.1063/5.0249667","url":null,"abstract":"InSb is a promising mid-temperature thermoelectric material, and its n-type thermoelectric properties have been widely studied. For thermoelectric device applications, it is necessary to have p-type counterparts. Here, we report the realization of p-type InSb with enhanced thermoelectric performance via Cd doping. A high-power factor of 1.91 × 10−3 W m−1 K−2 is obtained in p-type In0.93Cd0.07Sb at 723 K due to the increased carrier concentration. Moreover, the lattice thermal conductivity is decreased to 2.0 W m−1 K−1 owing to the significant multiscale phonon scattering and the suppressed bipolar diffusion effect. Ultimately, the peak zT value of 0.40 is achieved at 723 K in p-type In0.93Cd0.07Sb, which surpasses most contemporary p-type InSb materials. This study demonstrates a simple strategy for fabricating p-type InSb with high performance and holds promise in advancing the development of InSb-based TE devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"15 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143026529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Stable magnetocaloric effect over an ultrawide temperature range of 146–320 K via hydrostatic pressure in kagome magnets kagome磁体在146-320 K的超宽温度范围内通过静水压力产生稳定的磁热效应
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2025-01-23 DOI: 10.1063/5.0243560
Junchao Sheng, Jiawang Xu, Lei Xi, Shouyuan Xing, Shihao Li, Xucai Kan, Xinqi Zheng, He Huang, Lichen Wang, Yuyan Han, Shiming Zhou, Baogen Shen, Shouguo Wang
{"title":"Stable magnetocaloric effect over an ultrawide temperature range of 146–320 K via hydrostatic pressure in kagome magnets","authors":"Junchao Sheng, Jiawang Xu, Lei Xi, Shouyuan Xing, Shihao Li, Xucai Kan, Xinqi Zheng, He Huang, Lichen Wang, Yuyan Han, Shiming Zhou, Baogen Shen, Shouguo Wang","doi":"10.1063/5.0243560","DOIUrl":"https://doi.org/10.1063/5.0243560","url":null,"abstract":"Solid-state refrigeration leveraging the magnetocaloric effect (MCE) presents a sustainable and energy-efficient alternative to traditional gas compression refrigeration technologies. However, the practical utility of most magnetocaloric materials is restricted by their narrow operational temperature window. In this work, a stable magnetocaloric effect across an ultrawide temperature range of 146–320 K was achieved in Hf0.85Ta0.15Fe2 magnet via the hydrostatic pressure manipulation. Furthermore, the underlying mechanism for the extended and stable MCEs under hydrostatic pressure has been revealed by magnetization measurements and first-principles calculations. The material systems characterized by strong spin–lattice coupling exhibit considerable potential for externally manipulated hybrid-field-tuned magnetic properties and magnetocaloric performance, providing a convenient and practical approach for advancing applications in magnetic refrigeration technologies.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"147 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143020493","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Tunable qubit quantum battery with delta-pulse driving
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2025-01-23 DOI: 10.1063/5.0245610
M. Shoufie Ukhtary, Choirun Nisaa Rangkuti
{"title":"Tunable qubit quantum battery with delta-pulse driving","authors":"M. Shoufie Ukhtary, Choirun Nisaa Rangkuti","doi":"10.1063/5.0245610","DOIUrl":"https://doi.org/10.1063/5.0245610","url":null,"abstract":"A quantum battery consisting of two coupled qubits driven by a delta-pulse is investigated. By using the framework of open quantum system, we obtain analytically several quantities describing the performance of the quantum battery. In particular, we are interested in the stored energy and the extractable energy known as ergotropy. We discover that by tuning the driving strength and the coupling strength, we can isolate the origin of the ergotropy: quantum coherences, population inversion, or combination of them. Furthermore, increasing the coupling strength not only enhances the stored energy, the ergotropy and charging power, but also reducing the charging time, which boosts the performance of the quantum battery.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"87 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143026482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
GaN-based shallow-trench vertical Hall devices
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2025-01-23 DOI: 10.1063/5.0250222
Kaiming Ma, Huolin Huang, Nan Sun, Nannan Ding, Qingyuan Zuo, Wenchao Shan, Li Zhang, Guohao Lv, Jianxun Dai, Deyi Fu
{"title":"GaN-based shallow-trench vertical Hall devices","authors":"Kaiming Ma, Huolin Huang, Nan Sun, Nannan Ding, Qingyuan Zuo, Wenchao Shan, Li Zhang, Guohao Lv, Jianxun Dai, Deyi Fu","doi":"10.1063/5.0250222","DOIUrl":"https://doi.org/10.1063/5.0250222","url":null,"abstract":"In this Letter, a GaN-based vertical Hall device is designed and experimentally fabricated, offering an effective solution for in-plane magnetic field detection. By introducing a shallow trench structure between the excitation and sensing electrodes, the short-circuit current flowing into sensing contacts in GaN-based vertical Hall devices was strongly suppressed. Through TCAD simulation analysis, the optimal range of the shallow trench depth was determined, which was then confirmed by the experimental data. From the experimental results, the sensitivity was found to be improved by 4674.7%, from 3.8 to 177.6 mV/AT, while nonlinearity was reduced by 95.5%, from 19.17% to 0.87%. The effects of device width and sensing electrode length on the device performance were also investigated in detail. Finally, this work experimentally validated the device's angle detection capability, indicating that the GaN-based vertical Hall sensor could be combined with the currently well-established horizontal Hall sensors to create high-performance monolithic integrated three-dimensional Hall sensors.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"108 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143026478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Surface phonons in the 1/f noise of Bi2Se3
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2025-01-23 DOI: 10.1063/5.0252847
M. Mihaila, P. Varasteanu
{"title":"Surface phonons in the 1/f noise of Bi2Se3","authors":"M. Mihaila, P. Varasteanu","doi":"10.1063/5.0252847","DOIUrl":"https://doi.org/10.1063/5.0252847","url":null,"abstract":"Temperature dependence of the 1/f noise intensity in Bi2Se3 features a weak structure of unknown origin. Comparing the noise structure with the Raman spectrum of Bi2Se3, we found that it is the image of the surface phonon spectrum of this topological insulator. It also revealed that the low intensity of both noise bands composing the structure in the topological regime is due to the weak interaction of the Dirac electrons with the surface phonons of Bi2Se3. One of these noise bands has been found to correspond to the boson peak of the amorphous Se surface atoms, while the other one is well fitted by the Eliashberg function of amorphous Bi. It indicates that the interaction of the Dirac electrons with the thermal motion of the Se and Bi atoms, in the first and second atomic layers of the first quintuple Se–Bi–Se–Bi–Se surface cell, respectively, is the microscopic source of the surface 1/f noise in this quantum material. A step-like noise increase observed at a surface-bulk transition in a Bi2Se3 film is assigned to a Fano resonance. This proves that the electron–phonon coupling is involved in the microscopic mechanism of 1/f noise in solids.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"74 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143026481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-throughput screening and research of nitrogen reduction on 2D metal–organic framework: First-principles study
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2025-01-23 DOI: 10.1063/5.0221872
Zheng-Yun Xiong, Wen-qing Hong, Yu Qing Zhao, Wen Jin Yin, Ying Xu
{"title":"High-throughput screening and research of nitrogen reduction on 2D metal–organic framework: First-principles study","authors":"Zheng-Yun Xiong, Wen-qing Hong, Yu Qing Zhao, Wen Jin Yin, Ying Xu","doi":"10.1063/5.0221872","DOIUrl":"https://doi.org/10.1063/5.0221872","url":null,"abstract":"Developing efficient nitrogen reduction reaction (NRR) catalysts remains challenging. Two-dimensional metal–organic frameworks (MOFs) stand out because of their large holes and high metal utilization. Based on first-principles high-throughput calculations, we studied the catalytic capacity of MOF catalyst TM3 (HITP)2 for NRR. Our calculated results indicate that among 29 catalytic structures, Mo3(HITP)2 and Os3(HITP)2 exhibit excellent activity for NRR, with the overpotential being 0.39 and 0.43 V, respectively. The unoccupied 4d orbitals of Mo are especially closer to the antibonding N-2p orbitals, leading to better nitrogen activation and lower overpotential. In addition, a descriptor related to charge variation and the electronegativity of metals and coordinating atoms is established, which has a good volcano plot relationship with the limiting potential of NRR and can provide ideas for catalyst screening. This research contributes valuable insights for the screening of NRR catalysts based on MOF.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"206 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143026527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of inversion-domain boundaries in four-layer polarity-inverted AlN structure
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2025-01-23 DOI: 10.1063/5.0249911
Tomohiro Tamano, Kanako Shojiki, Toru Akiyama, Ryota Akaike, Takao Nakamura, Hiroto Honda, Eiki Sato, Masahiro Uemukai, Tomoyuki Tanikawa, Ryuji Katayama, Hideto Miyake
{"title":"Analysis of inversion-domain boundaries in four-layer polarity-inverted AlN structure","authors":"Tomohiro Tamano, Kanako Shojiki, Toru Akiyama, Ryota Akaike, Takao Nakamura, Hiroto Honda, Eiki Sato, Masahiro Uemukai, Tomoyuki Tanikawa, Ryuji Katayama, Hideto Miyake","doi":"10.1063/5.0249911","DOIUrl":"https://doi.org/10.1063/5.0249911","url":null,"abstract":"We have fabricated a four-layer polarity-inverted aluminum nitride (AlN) structure using a combination of sputtering and face-to-face annealing. We investigated the impurity concentrations and structure of the polarity inversion-domain boundaries (IDBs) of the four-layer polarity-inverted AlN structure. Atomic-scale observations revealed that the interface of the IDBs from Al-polar AlN to N-polar AlN consists of three monolayers (MLs) of O-Al-O, while the IDBs from N-polar AlN to Al-polar AlN consist of 8–10 ML of AlxOyNz. Additionally, the positions of the IDBs from N-polar AlN to Al-polar AlN shifted by 20–30 nm from the interface of sputtered AlN toward the surface, whereas those from Al-polar AlN to N-polar AlN remained at the same position as the interface of sputtered AlN. The interface energies of these IDBs were investigated using first-principles calculations, which support the O-Al-O structure for the IDB from Al-polar AlN to N-polar AlN and the AlxOyNz structure for the IDBs from N-polar AlN to Al-polar AlN.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"15 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143026483","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Chiral correlated-plasmons enhanced Raman optical activity from spin-polarized, correlated s band in highly oriented single-crystalline gold quantum-dots
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2025-01-23 DOI: 10.1063/5.0239918
Shermine Ho, Bin Leong Ong, Muhammad Avicenna Naradipa, Angga Dito Fauzi, M. Saifudin B. M. Ali, Eng Soon Tok, Andrivo Rusydi
{"title":"Chiral correlated-plasmons enhanced Raman optical activity from spin-polarized, correlated s band in highly oriented single-crystalline gold quantum-dots","authors":"Shermine Ho, Bin Leong Ong, Muhammad Avicenna Naradipa, Angga Dito Fauzi, M. Saifudin B. M. Ali, Eng Soon Tok, Andrivo Rusydi","doi":"10.1063/5.0239918","DOIUrl":"https://doi.org/10.1063/5.0239918","url":null,"abstract":"Interactions of chiral light with chiral matter, such as Raman optical activity (ROA) and, independently, spin-polarized materials have attracted a lot of interest for both fundamental science and applications. The ROA, on the one hand, provides information on chiral phonons of molecules. However, the short-lifetime ROA signal in general is extremely weak and requires long exposure times, making it not accessible for many important systems with short lifetime. Materials exhibiting high spin polarization in d or f band, on the other hand, remain very limited even at very low temperature. There has been no report on materials exhibiting spin polarization in s band. Herewith, we report a room temperature, full spin polarization in unconventional, correlated s band of highly oriented single-crystalline gold quantum-dots (HOSG-QDs). Intriguingly, the HOSG-QDs produce a chiral correlated-plasmons enhanced Raman optical activity (CP-ROA) with anomalous ROA enhancement and strong spin-dependent chiral coupling. We then address a fundamental problem in crystal violet. Using spin-polarized HOSG-QDs chips, we observe strong CP-ROA signal, revealing chiral properties. The chiral correlated-plasmons of HOSG-QDs interact with the spin, electronic, and lattice structures of crystal violet, revealing chiral phonons and chiral electronic Raman excitations of crystal violet. Such a strong CP-ROA spectrum is obtained within a minute of measurement and a simple preparation without patterning. Our result shows that the CP-ROA based on a spin-polarized HOSG-QDs is extremely sensitive to the chiral property of phonon and spin and electronic structures and a fast, label-free chiral spectroscopic-based detection.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"21 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143026484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Hanle spin precession induced inverted magnetoresistance in chiral/semiconductor systems
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2025-01-23 DOI: 10.1063/5.0254772
S. H. Tirion, B. J. van Wees
{"title":"Hanle spin precession induced inverted magnetoresistance in chiral/semiconductor systems","authors":"S. H. Tirion, B. J. van Wees","doi":"10.1063/5.0254772","DOIUrl":"https://doi.org/10.1063/5.0254772","url":null,"abstract":"In the past decade, chiral materials have drawn significant attention because it is widely claimed that they can act as spin injectors/detectors due to the chirality-induced spin selectivity effect. Nevertheless, the microscopic origin of this effect is not understood, which generates the need for transport experiments that confirm the spin-dependent transport in chiral materials. Hanle spin precession measurements can unambiguously prove the injection and detection of a spin accumulation in a non-magnetic material, as was shown with traditional ferromagnetic injectors/detectors. Here, we model and analyze in detail the Hanle spin precession-induced magnetoresistance for chiral/semiconductor systems and find that the signal is inverted as compared to the ferromagnetic case. We explicitly model the spin injection and detection by both a chiral system and a ferromagnetic system, as well as the spin transport in a semiconductor, for a general set of (spin) transport parameters that cover the relevant experimental regime. For all sets of parameters, we find that the Hanle signals for a chiral system and ferromagnet are each other's opposites. We also discuss the implications for four terminal nonlocal spin transport experiments with separate chiral spin injector and detectors.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"15 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143026531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Significant improvement of energy storage density and efficiency of 0.72Bi0.5Na0.5TiO3-0.28SrTiO3 ceramics and study of the mechanism of high temperature energy storage performance
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2025-01-23 DOI: 10.1063/5.0235963
Peng Shi, Jin Liu, Yuechan Song, Lina Liu, Wenwen Wu, Xiaobin Zhou, Xiaoming Chen, Yanmin Jia, Xiaojie Lou, Peng Liu
{"title":"Significant improvement of energy storage density and efficiency of 0.72Bi0.5Na0.5TiO3-0.28SrTiO3 ceramics and study of the mechanism of high temperature energy storage performance","authors":"Peng Shi, Jin Liu, Yuechan Song, Lina Liu, Wenwen Wu, Xiaobin Zhou, Xiaoming Chen, Yanmin Jia, Xiaojie Lou, Peng Liu","doi":"10.1063/5.0235963","DOIUrl":"https://doi.org/10.1063/5.0235963","url":null,"abstract":"The energy storage properties of the 0.72Bi0.5Na0.5TiO3-0.28SrTiO3 system have been heavily investigated; however, achieving both high recoverable energy storage density (Wr) and large energy efficiency (η) remains a challenge. In this study, relaxor ferroelectric ceramics exhibiting high Wr and η were prepared by introducing BaSnO3 into 0.9(Bi0.5Na0.5)0.72Sr0.28TiO3-0.1Bi(Mg0.5Ti0.5)O3 relaxor ceramics. A remarkable Wr of 7.5 J/cm3 and η of 91.2% were achieved in the 0.94[0.9(Bi0.5Na0.5)0.72Sr0.28TiO3-0.1Bi(Mg0.5Ti0.5)O3]-0.06BaSnO3 ceramic at an electric field of 460 kV/cm. The η and the energy storage potential (Wr/Eb), respectively, surpass those reported for most ceramics in recent years. The introduction of high-temperature-stable BaSnO3 imparted excellent temperature and frequency stability to the ceramic. The ceramic exhibited a Wr of 3.6 J/cm3 and an η of 79.6% at 160 °C and 265 kV/cm. The sample has a power density of 202.8 MW/cm3, an energy density of 2.2 J/cm3 at an electric field of 260 kV/cm, and a fast charge–discharge capability.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"51 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143026479","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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