Applied Physics Letters最新文献_第2页

Growth of CdTe films on patterned graphene/Ge (100) by molecular beam epitaxy

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-02 DOI: 10.1063/5.0257127

Yanhui Zhang, Haitao Jiang, Zaihong Yang, Liuyan Fan, Ziteng Zhang, Can Zhou, Xiaohao Zhou, Pingping Chen

引用次数: 0

1.96 kV p-Cr2O3/ β -Ga2O3 heterojunction diodes with an ideality factor of 1.07

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-02 DOI: 10.1063/5.0248187

Chunxu Su, Hong Zhou, Zheyuan Hu, Chenlu Wang, Yue Hao, Jincheng Zhang

引用次数: 0

Tunable magneto-optical Kerr effect in two-dimensional non-collinear antiferromagnetic material HfFeCl6

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-02 DOI: 10.1063/5.0251830

Di Zhou, Ning Ding, Haoshen Ye, Shuai Dong, Shan-Shan Wang

{"title":"Tunable magneto-optical Kerr effect in two-dimensional non-collinear antiferromagnetic material HfFeCl6","authors":"Di Zhou, Ning Ding, Haoshen Ye, Shuai Dong, Shan-Shan Wang","doi":"10.1063/5.0251830","DOIUrl":"https://doi.org/10.1063/5.0251830","url":null,"abstract":"With the development of two-dimensional (2D) magnetic materials, the magneto-optical Kerr effect (MOKE) is widely used to measure ferromagnetism in 2D systems. Although this effect is usually inactive in antiferromagnets (AFM), recent theoretical studies have demonstrated that the presence of MOKE relies on the symmetry of the system and antiferromagnets with noncollinear magnetic order can also induce a significant MOKE signal even without a net magnetization. However, this phenomenon is rarely studied in 2D systems due to the scarcity of appropriate materials hosting noncollinear AFM order. Here, based on first-principles calculations, we investigate the HfFeCl6 monolayer with noncollinear Y-AFM ground states, which simultaneously breaks the time-reversal (T) and time-inversion (TI) symmetry, activating the MOKE even though with zero net magnetic moment. In addition, four different MOKE spectra can be obtained in the four permutation states of spin chirality and crystal chirality. The MOKE spectra are switchable when reversing both crystal and spin chirality. Our study provides a material platform to explore the MOKE effect and can potentially be used for electrical readout of AFM states.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"15 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143775348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

RF-sputtered Al-doped ZnO-based transparent electrochemical capacitors developed as a structural energy storage to replace double-glazed window for a smart building

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-02 DOI: 10.1063/5.0255229

Febin Paul, Vishnu Kalarikkal Narayanan, Sreenath S. Gopidas, Prasutha Rani Markapudi, Chan H. See, Gin Jose, Sankara Narayanan Potty, Libu Manjakkal

{"title":"RF-sputtered Al-doped ZnO-based transparent electrochemical capacitors developed as a structural energy storage to replace double-glazed window for a smart building","authors":"Febin Paul, Vishnu Kalarikkal Narayanan, Sreenath S. Gopidas, Prasutha Rani Markapudi, Chan H. See, Gin Jose, Sankara Narayanan Potty, Libu Manjakkal","doi":"10.1063/5.0255229","DOIUrl":"https://doi.org/10.1063/5.0255229","url":null,"abstract":"Structural energy storage combines energy storage with structural strength, reducing weight, saving space, and improving efficiency. Among various types, transparent structural energy storage shows strong potential for seamless integration into windows, screens, surfaces, consumer electronics, and automotive applications. Developing new electrode designs with environmentally abundant materials is essential to achieving global decarbonization goals and the net-zero target. In this work, we developed a transparent electrochemical capacitor (TEC) as a structural energy storage using aluminum-doped ZnO (AZO) film prepared by radio frequency sputtering on an indium-doped tin oxide (ITO) glass. We observed that the excellent electrical properties of the AZO film including high carrier concentration 6.54 × 1020 cm−3, Hall mobility 25.8 cm2 V−1 s−1, and resistivity 3.7 × 10−4 Ω cm contributed to enhancing the electrochemical performance of the TEC. The prepared transparent AZO exhibits a high specific capacitance of 44.4 μF cm−2 at 1 mV s−1 for a three-electrode study in a liquid electrolyte. The TEC fabricated using gel electrolyte shows a specific capacitance of 5.93 μF cm−2 at 1 mV s−1. We observed that both the electrochemical double-layer capacitance and pseudo-capacitance contributed to the charge storage in TEC, which was measured using Dunn's method. The double-glazed window shape of the TEC exhibits its promising potential for implementation as structural energy storage in smart buildings. We demonstrated TEC performance under various temperatures (−10 to 30 °C), its transparency of about 85% in the visible light range, and its integration capabilities with solar cells. This TEC aims to develop a structural element for smart buildings or autonomous electric vehicles.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"74 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143757782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Transport properties of graphene/MoS2 heterostructure device in the low carrier density regime at cryogenic temperatures

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-02 DOI: 10.1063/5.0253946

Muhammad Atif Khan, Hanul Kim, Hye Jung Kim, Aram Yoon, Zonghoon Lee, Christopher J. B. Ford, Gil-Ho Kim

{"title":"Transport properties of graphene/MoS2 heterostructure device in the low carrier density regime at cryogenic temperatures","authors":"Muhammad Atif Khan, Hanul Kim, Hye Jung Kim, Aram Yoon, Zonghoon Lee, Christopher J. B. Ford, Gil-Ho Kim","doi":"10.1063/5.0253946","DOIUrl":"https://doi.org/10.1063/5.0253946","url":null,"abstract":"We explore the transport characteristics of a graphene–MoS2 heterostructure transistor in the low carrier density regime at cryogenic temperatures, specifically between 30 and 50 K. The device exhibits persistent current oscillations between two distinct levels, which we attribute to the trapping and de-trapping of charge carriers in defect states within the forbidden bandgap. These oscillations show a pronounced temperature dependence, with both the frequency and amplitude of the oscillations in current exhibiting significant changes as the temperature is varied. Furthermore, when a magnetic field is applied, the device demonstrates positive magneto current, which we associate with the suppression of weak localization effects in the carriers at low temperatures. The magneto-current and magnetoresistance are also strongly correlated with temperature, as validated by the temperature-dependent measurements. Our findings offer valuable insights into the transport properties of two-dimensional materials and devices in the low carrier density regime at cryogenic temperatures, providing a foundation for developing more robust and versatile devices for future applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"141 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143775351","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Permittivity and remanent polarization contributions to the electrocaloric effect in (Ba, Sr)TiO3 under unipolar field

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-02 DOI: 10.1063/5.0259805

Yukiya Tanaka, Ryo Iguchi, Takashi Teranishi, Shinya Kondo, Akira Kishimoto

{"title":"Permittivity and remanent polarization contributions to the electrocaloric effect in (Ba, Sr)TiO3 under unipolar field","authors":"Yukiya Tanaka, Ryo Iguchi, Takashi Teranishi, Shinya Kondo, Akira Kishimoto","doi":"10.1063/5.0259805","DOIUrl":"https://doi.org/10.1063/5.0259805","url":null,"abstract":"The electrocaloric effect (ECE)-induced temperature change (ΔT) in (Ba, Sr)TiO3-based ferroelectrics under unipolar electric fields was analyzed from the separate contributions of the dielectric constant (ε) and remanent polarization (Pr) based on the Maxwell relation. Consideration of the contributions of both ε and Pr is particularly important in a unipolar electric field operation, such as on/off field switching used in device applications. Direct ΔT measurements were also performed based on the lock-in thermography technique to verify the accuracy of the ΔT intensity estimated by the indirect method. The indirect and direct ΔT values were largely consistent. The ΔT intensity near the peak temperature of ΔT was dominated by the Pr contribution; a large ∂Pr/∂T was necessary to increase the overall ΔT magnitude. In contrast, a large ∂ε/∂T was essential to expand the operating temperature range of ΔT at temperatures higher than the dielectric maximum temperature. Quantitative understanding of the contributions of both ε and Pr to ΔT in unipolar electric fields is expected to guide the search for materials with a superior ECE.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"62 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143775352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

An enhancement-mode C-H diamond FET with low work function gate material gadolinia 采用低功函数栅极材料钆的增强型 C-H 钻石场效应晶体管

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-02 DOI: 10.1063/5.0250891

Minghui Zhang, Fang Lin, Wei Wang, Mingchen Zhang, Qi Qi, Genqiang Chen, Feng Wen, Yanfeng Wang, Pengfei Zhang, Yuesong Liang, Shuwei Fan, Cui Yu, Tai Min, Hongxing Wang

{"title":"An enhancement-mode C-H diamond FET with low work function gate material gadolinia","authors":"Minghui Zhang, Fang Lin, Wei Wang, Mingchen Zhang, Qi Qi, Genqiang Chen, Feng Wen, Yanfeng Wang, Pengfei Zhang, Yuesong Liang, Shuwei Fan, Cui Yu, Tai Min, Hongxing Wang","doi":"10.1063/5.0250891","DOIUrl":"https://doi.org/10.1063/5.0250891","url":null,"abstract":"Enhancement-mode hydrogen-terminated diamond (C-H diamond) field effect transistors (FETs) are strongly desirable for safety protection, energy saving, etc., and low work function gate material is an effective and convenient way to deplete the two-dimensional hole gas and realize the enhancement-mode. In this article, we demonstrate a C-H diamond FET with low work function gadolinia (Gd2O3) gate materials. For the 4 μm gate length (LG) Gd2O3 C-H diamond FET, the device demonstrates an obvious enhancement-mode with a threshold voltage of −1.3 V. Besides, the maximum source/drain current density and the leakage current density are −80.0 mA/mm and 1.6 × 10−6 A/cm2 at a gate voltage of −7 V, respectively. Moreover, the device demonstrates a saturation carrier mobility of 437.3 cm2/V · s. Accordingly, this enhancement-mode C-H diamond Gd2O3 FET demonstrates high performance with relatively high source/drain current density and low leakage current density, which will provide a strategy for the development of enhancement-mode C-H diamond FETs significantly.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"59 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143757988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dual-gradient multilayer ultra-microperforated panel composite for ultra-broadband and quasi-perfect sound absorption

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-02 DOI: 10.1063/5.0257704

Yujie Qian, Bingxu Li, Jie Zhang

引用次数: 0

Coexistence of intrinsic magnetic topological state and spin-polarized nontrivial flatband in the honeycomb-kagome monolayers X2Rb3 (X=Cr, Mo, W)

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-03-31 DOI: 10.1063/5.0260370

Jiashuo Liang, Hongshuang Liu, Bo Wang, Zeying Zhang, Liying Wang

{"title":"Coexistence of intrinsic magnetic topological state and spin-polarized nontrivial flatband in the honeycomb-kagome monolayers X2Rb3 (X=Cr, Mo, W)","authors":"Jiashuo Liang, Hongshuang Liu, Bo Wang, Zeying Zhang, Liying Wang","doi":"10.1063/5.0260370","DOIUrl":"https://doi.org/10.1063/5.0260370","url":null,"abstract":"Magnetic materials featuring topology and flatband in their electronic structure bridge the topological quantum physics and strongly correlated many-body physics, but materials that manifest this feature are rare. Here, we predict a class of ideal intrinsic magnetic topological insulators naturally featuring a nontrivial flatband in the two-dimensional (2D) honeycomb-kagome lattices X2Rb3 (X=Cr, Mo, W). In the absence of spin–orbit coupling (SOC), these monolayers are spin-polarized half-semimetals with a twofold degenerate nodal point and a flatband appearing at the Fermi level simultaneously. With SOC included, a significant bandgap (168 meV for W2Rb3) opens up at the band touching point, and the flatband that spans the whole Brillouin zone becomes nontrivial with a nonzero Chern number (C = 1). The topological property calculations verify that X2Rb3 monolayers are intrinsic quantum anomalous Hall effect materials. Due to the similarity to 2D continuum Landau levels, the striking nontrivial flatband in X2Rb3 makes it an ideal platform to investigate the flatband physics, such as the realization of fractional quantum anomalous Hall states in real materials.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"15 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143744828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Charge localization in optoelectronic and photocatalytic applications: Computational perspective

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-03-31 DOI: 10.1063/5.0257250

Francesco Ambrosio, Julia Wiktor

引用次数: 0