Applied Physics Letters最新文献_第2页

Fully hafnium-based ferroelectric/antiferroelectric devices for hybrid SNN neuromorphic computing 用于混合SNN神经形态计算的全铪基铁电/反铁电器件

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-08-31 DOI: 10.1063/5.0321092

Qingxin Chen,Jinhao Zhang,Junming Zhang,Zhentao Yue,Jialin Meng,Qian Xin,Mingsheng Xu,Tianyu Wang

{"title":"Fully hafnium-based ferroelectric/antiferroelectric devices for hybrid SNN neuromorphic computing","authors":"Qingxin Chen,Jinhao Zhang,Junming Zhang,Zhentao Yue,Jialin Meng,Qian Xin,Mingsheng Xu,Tianyu Wang","doi":"10.1063/5.0321092","DOIUrl":"https://doi.org/10.1063/5.0321092","url":null,"abstract":"Neuromorphic computing based on ferroelectric devices has shown great potential in artificial intelligence tasks. However, the challenge of heterogeneous integration between synaptic and neuronal devices has imposed additional limitations on hybrid neural network hardware. In this work, ferroelectric and antiferroelectric devices based on element doping engineering of HfZrOx films are employed to emulate synaptic and neuron functionality for hybrid spiking neural network (SNN) neuromorphic computing. By constructing a functional circuit based on an Hf0.5Zr0.5O2 ferroelectric device, neural characteristics were emulated for SNN computing. Furthermore, the integrate-and-fire dynamics is implemented based on spontaneous depolarization characteristic of a full hafnium-based hybrid ferroelectric neural network, greatly simplifying conventional neuron circuits. The novel neural network architecture achieves a classification accuracy of 92.8% on the Dynamic Vision Sensor dataset, establishing a crucial foundation for the development of high-efficiency neuromorphic computing systems. This work demonstrates considerable promise for realizing hybrid neuromorphic hardware using CMOS-compatible full hafnium-based ferroelectric devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"3 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148894161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Temperature-dependent characteristics of quasi-vertical AlN Schottky diodes on bulk AlN substrate 块状AlN衬底上准垂直AlN肖特基二极管的温度依赖特性

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-08-31 DOI: 10.1063/5.0351565

Md Abdul Hamid,Nabasindhu Das,Advait Gilankar,Brad Lenzen,David J. Smith,Nidhin Kurian Kalarickal

引用次数: 0

Visualization of thermal and strain dynamics in x-ray optics by time-resolved rocking curve imaging 时间分辨摇摆曲线成像在x射线光学中的热与应变动力学可视化

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-08-31 DOI: 10.1063/5.0304414

T. Sato,D. Zhu,R. Margraf-O'Neal,K. Tamasaku,T. Osaka,H. Osawa,M. Yabashi

{"title":"Visualization of thermal and strain dynamics in x-ray optics by time-resolved rocking curve imaging","authors":"T. Sato,D. Zhu,R. Margraf-O'Neal,K. Tamasaku,T. Osaka,H. Osawa,M. Yabashi","doi":"10.1063/5.0304414","DOIUrl":"https://doi.org/10.1063/5.0304414","url":null,"abstract":"The absorption of intense x-ray pulses from free-electron lasers by x-ray crystal optics triggers rapid thermal and mechanical responses, including lattice compression, expansion, and strain-wave propagation, which dynamically modify diffraction conditions and wavefront properties. These effects pose significant challenges for next-generation high-repetition rate x-ray sources, particularly for crystal monochromators used in x-ray free-electron laser beamlines and self-seeding. Here, we demonstrate time-resolved rocking curve imaging of x-ray Bragg optics with high spatial resolution (6.4 μm) and sub-1μ rad angular resolution, enabling direct visualization of lattice dynamics from nanoseconds to microseconds. By combining a high-flux beamline at SPring-8, a scintillator-coupled scientific Complementary Metal–Oxide–Semiconductor (sCMOS) detector, and a synchronized femtosecond laser system, we capture lattice dynamics induced by transient laser heating with a strain sensitivity on the order of 10−6. Our results reveal transient lattice deformation and the propagation of laser-induced strain waves over millimeter-scale distances. This approach provides experimental benchmarks for understanding heat-load effects in high-repetition rate x-ray optics.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"42 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148894164","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Rapidly resolving bilayer stacking orientation in industrially compatible MOCVD-grown MoS2 films through second harmonic generation imaging 通过二次谐波成像快速解决工业兼容mocvd生长的MoS2薄膜的双层堆叠方向

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-08-31 DOI: 10.1063/5.0334162

Reynolds Dziobek-Garrett,Vina Faramarzi,Pawan Kumar,Vasco Tenner,Marko Kamp,A. Femius Koenderink,Jorik van de Groep,Roland Bliem

{"title":"Rapidly resolving bilayer stacking orientation in industrially compatible MOCVD-grown MoS2 films through second harmonic generation imaging","authors":"Reynolds Dziobek-Garrett,Vina Faramarzi,Pawan Kumar,Vasco Tenner,Marko Kamp,A. Femius Koenderink,Jorik van de Groep,Roland Bliem","doi":"10.1063/5.0334162","DOIUrl":"https://doi.org/10.1063/5.0334162","url":null,"abstract":"Atomically thin semiconductor films grown by metal organic chemical vapor deposition (MOCVD) will be crucial for the integration of two-dimensional (2D) materials into semiconductor devices produced at scale. However, the development of wafer-scale growth techniques has outpaced the development of corresponding metrology to assess film quality of 2D transition metal dichalcogenide (TMD) films. One particularly difficult issue is that the stacking sequence when overgrowing TMD films is not uniquely defined, with different possible orientations for the second layer. Determining this stacking order of individual grains when growing additional layers over a closed monolayer is an outstanding challenge for such films. Here, we use second harmonic generation (SHG) microscopy to assess the size, dispersion, and stacking orientation of bilayer grains in MOCVD-grown MoS2 films. We correlate several microscopy techniques—bright-field white-light microscopy imaging, atomic force microscopy, photoluminescence mapping, and SHG microscopy—to show that SHG can uniquely map the stacking orientation of bilayer nucleates in these films. We expect this to drive the development of further metrology based on SHG for semiconductor applications, especially in the development of 2D material specific tools.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"163 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148895924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ru-mediated oxygen-vacancy redistribution in In-rich oxide thin-film transistors 富铟氧化物薄膜晶体管中钌介导的氧空位重分布

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-08-31 DOI: 10.1063/5.0346758

Zefu Zhao,Xiaolin Jiang,Shenglin Pan,Kai-Jhih Gan,Shaohao Wang,Tiaoyang Li,Dun-Bao Ruan

{"title":"Ru-mediated oxygen-vacancy redistribution in In-rich oxide thin-film transistors","authors":"Zefu Zhao,Xiaolin Jiang,Shenglin Pan,Kai-Jhih Gan,Shaohao Wang,Tiaoyang Li,Dun-Bao Ruan","doi":"10.1063/5.0346758","DOIUrl":"https://doi.org/10.1063/5.0346758","url":null,"abstract":"Indium-rich amorphous oxide semiconductors exhibit high electron mobility, but oxygen vacancy (Vo) related donors often cause a negative threshold voltage (Vt) and bias-stress instability. This work demonstrates a 2 nm InRuZnO (IRZO) interlayer into an InZnO (IZO) channel as an internal oxygen-affinitive layer, rather than as a conventional bulk dopant. The IZO/IRZO/IZO tri-layer thin-film transistor (TFT) exhibits a field-effect mobility of 31 cm2/V s, a Vt of 0.3 V, a forward–reverse hysteresis below 100 mV, and an ON/OFF current ratio of 4 × 108. X-ray photoelectron spectroscopy depth profiling of the O 1s reveals a Ru-modulated vertical distribution of Vo, with Vo concentrations of 32%, 20%, and 24% in the top IZO, IRZO, and bottom IZO regions, respectively. This depth dependence indicates that the Ru-containing interlayer locally stabilizes oxygen bonding and redistributes Vo across the In-rich channel. The tri-layer TFTs also reduce the ΔVt to −0.3 V after 1000 s of negative gate-bias stress at −2 MV/cm, demonstrating improved reliability. This work identifies Ru-mediated Vo modulation as a route for improving the mobility–stability balance of sputtered In-rich oxide TFTs.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"28 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148894023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Publisher's Note: “Gd2O3-induced electronic modulation of Cu for efficient oxygen reduction in aluminum–air batteries” [Appl. Phys. Lett. 129 , 053905 (2026)] 出版人注：“gd2o3诱导的Cu电子调制用于铝-空气电池的高效氧还原”[苹果]。理论物理。Lett. 129, 053905 (2026)]

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-08-31 DOI: 10.1063/5.0356440

Simin Shan,Jiahao Zhang,Xuerong Zheng,Jinfang Wu,Wenbo Wang

引用次数: 0

Dual-field manipulation of terahertz polarization in programmable ferroelectric-based spintronic emitter 可编程铁电基自旋电子发射极中太赫兹偏振的双场操纵

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-08-31 DOI: 10.1063/5.0342699

Yaxin Tao,Changqin Liu,Kaikai Wang,Xiaojuan Yuan,Dongsheng Yang,Jingyi Hu,Jiahao Chen,Chao Zhou,Xiaoxiang Yu,Dongdong Kang,Jiayu Dai

{"title":"Dual-field manipulation of terahertz polarization in programmable ferroelectric-based spintronic emitter","authors":"Yaxin Tao,Changqin Liu,Kaikai Wang,Xiaojuan Yuan,Dongsheng Yang,Jingyi Hu,Jiahao Chen,Chao Zhou,Xiaoxiang Yu,Dongdong Kang,Jiayu Dai","doi":"10.1063/5.0342699","DOIUrl":"https://doi.org/10.1063/5.0342699","url":null,"abstract":"Electric-field control of spintronic terahertz (THz) emitters offers an attractive route toward compact and integrated THz devices. However, the quantitative relation between electric field and magnetic field orientation in dual manipulation of THz polarization remains unclear. Here, we investigate THz emission from Pt/Ni bilayers on ferroelectric Pb(Mg1/3Nb2/3)O3-PbTiO3 substrate. Rotated magnetic-field-dependent THz emission measurements, combined with a Stoner–Wohlfarth macrospin analysis, quantitatively determine the voltage-dependent anisotropy fields and their orientations. By experimentally comparing the vectorial THz response at representative magnetic-field orientations, we achieve an appreciable electric-field control of THz polarization rotation of up to 78° at a magnetic field angle of θH = 90°. Utilizing this polarization manipulation at the optimized magnetic field angle, we propose an electrically encoded THz far-field imaging scheme via delayed two-pulse excitation. These results provide a new approach for electrically designing structured THz emission.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"175 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148894027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Magnetic modulation of lattice thermal transport in monolayer Fe3GaTe2: Crossover of dominant phonon channels 单层Fe3GaTe2晶格热输运的磁调制：优势声子通道的交叉

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-08-31 DOI: 10.1063/5.0346350

Qingfang Li,Cuihong Yang,Jian Zhou,Xiangang Wan,Lei Zhang,Jing Su

{"title":"Magnetic modulation of lattice thermal transport in monolayer Fe3GaTe2: Crossover of dominant phonon channels","authors":"Qingfang Li,Cuihong Yang,Jian Zhou,Xiangang Wan,Lei Zhang,Jing Su","doi":"10.1063/5.0346350","DOIUrl":"https://doi.org/10.1063/5.0346350","url":null,"abstract":"Active control of heat flow at the nanoscale is important for next-generation thermal management and spintronic devices. Here, we report a substantial magnetic modulation of the in-plane lattice thermal conductivity (κL) in monolayer Fe3GaTe2, a two-dimensional van der Waals metal with room-temperature ferromagnetism. Using first-principles transport calculations combined with the special quasirandom structure approach, we demonstrate that the room-temperature κL decreases from 28.94 W m−1 K−1 in the ferromagnetic state to 5.09 W m−1 K−1 in the paramagnetic phase, yielding an intrinsic lattice thermal switching ratio of ∼5.7. Even when accounting for electronic thermal contributions, an estimated total magneto-thermal switching ratio of ∼3.5 is maintained. This massive reduction in κL fundamentally originates from spin-disorder-induced symmetry breaking. In the ferromagnetic state, the out-of-plane flexural acoustic (ZA) mode dominates the lattice heat conduction due to strict selection-rule protection. Upon transition to the paramagnetic phase, localized magnetic disorder destroys the horizontal mirror symmetry (σh), unlocking strong anharmonic scattering channels. This severely suppresses the ZA mode, drastically reducing its relative thermal contribution, and induces a crossover to longitudinal-acoustic-dominated transport. Our findings demonstrate the viability of regulating lattice heat transport via microscopic spin-lattice coupling, providing a quantitative framework for advanced thermal routing and spin-caloritronics.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"8 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148894018","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Reversible colloidal permutations via asymmetric microfluidic branching 通过不对称微流体分支的可逆胶体排列

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-08-31 DOI: 10.1063/5.0349797

Matthew Terkel,Pietro Tierno

{"title":"Reversible colloidal permutations via asymmetric microfluidic branching","authors":"Matthew Terkel,Pietro Tierno","doi":"10.1063/5.0349797","DOIUrl":"https://doi.org/10.1063/5.0349797","url":null,"abstract":"Controlling the transport and mixing of interacting microscopic particles driven through narrow microfluidic channels is important for many technological fields spanning from lab-on-a-chip technologies to targeted drug delivery and biomedicine, where precise handling of tiny amounts of fluids, cells, and droplets is required. Here, we demonstrate the controlled splitting, recombination, and permutation of repulsive colloids driven by flow toward a set of bifurcation points that separate narrow microfluidic channels. These operations are performed within a chip made of subsequent Y-junctions: a first that splits a single channel in two branches followed by a second that recombines them. We demonstrate that the different path lengths between the two branches can be used to adjust the particle speed in each channel, thus their exchange and ordering during recombination. With this strategy, we show reversible pairing, particle permutation, and controlled mixing between the two colloidal streams. Thus, our work opens the door to combinatorial microfluidics, establishing Y-junction networks as versatile building blocks for programmable colloidal transport at the micrometer scale.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"39 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148894022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A van der Waals water diode 一个范德华水二极管

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-08-31 DOI: 10.1063/5.0339189

Shuping Zhang,Zi Wang,Tao Zhang,Jiaye Su

{"title":"A van der Waals water diode","authors":"Shuping Zhang,Zi Wang,Tao Zhang,Jiaye Su","doi":"10.1063/5.0339189","DOIUrl":"https://doi.org/10.1063/5.0339189","url":null,"abstract":"Van der Waals (vdW) interaction plays a central role in the construction of mass in nature, based on which heterostructure materials are highly versatile and can be designed with distinctive functions. In this work, using molecular dynamics simulations, we show that a simple vdW heterostructure consisting of carbon nanocones (CNCs) encapsulating a fullerene molecule demonstrates surprising water diode behavior, which is not found in existing nanochannels. Owing to the strong vdW interaction of fullerene–CNC, the fullerene will be stuck near the CNC tip, resulting in a closed state for water transport in the convergent pressure direction. Nonetheless, when the divergent pressure exceeds certain critical values, the CNC channel opens for water transport, where the critical pressure is sensitive to the fullerene size and shape. This diode behavior originates from coupled fullerene–water dynamics: the water-driven force competes with the fullerene–wall vdW attraction to determine the fullerene position and stability inside the CNC. Notably, both the fullerene size and orientation modulate the vdW interaction barrier; in particular, an ellipsoid C80 fullerene reorients toward a preferred tilt angle relative to the CNC axis, which alleviates hindrance and sustains efficient tip-to-base water transport. These results establish fullerene encapsulation as a compact vdW-gating strategy for designing high-performance CNC-based water diodes.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"11 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148894094","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0