Applied Physics Letters最新文献_第2页

Spatially sequenced humidification decouples ionization and ozone chemistry in a floating-electrode plasma jet 空间顺序加湿解耦电离和臭氧化学在浮动电极等离子体射流

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-12 DOI: 10.1063/5.0354848

Runze Liang,He Xu,Kai Chen,Ting Zhu,Shoulong Dong,Chenguo Yao

引用次数: 0

Spatiotemporal learning parallel single-pixel imaging for dual-layer 3D reconstruction through scattering obstruction 时空学习并行单像素成像散射遮挡双层三维重建

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-12 DOI: 10.1063/5.0357279

Ji Tan,Jinhao Wu,Kai Chen,Wenqing Su,Zhaoshui He

{"title":"Spatiotemporal learning parallel single-pixel imaging for dual-layer 3D reconstruction through scattering obstruction","authors":"Ji Tan,Jinhao Wu,Kai Chen,Wenqing Su,Zhaoshui He","doi":"10.1063/5.0357279","DOIUrl":"https://doi.org/10.1063/5.0357279","url":null,"abstract":"Three-dimensional imaging through scattering obstructions is challenged by multi-path signal mixing. Although parallel single-pixel imaging (PSI) demonstrates strong capability in decoupling complex illumination, the large number of required basis patterns becomes a bottleneck for imaging efficiency. In this work, we propose a spatiotemporal learning parallel single-pixel imaging method (STL-PSI) that achieves high-efficiency dual-layer reconstruction through scattering obstructions. The proposed STL-PSI redefines the data acquisition paradigm by designing a two-stage learning framework to achieve single-frame basis spectral coefficient recovery, which replaces the conventional multi-step phase-shifting mechanism. Furthermore, by leveraging the joint constraints of temporal difference characteristics and the spatial phase retrieval model, we establish a physics- and data-driven pipeline to improve the accuracy of spectral coefficient prediction. Experiments validated that STL-PSI reduces the required basis patterns from over 130 to as few as 21, which corresponds to a reduction of approximately 84%, while simultaneously achieving comparable measurement accuracy.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"68 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149208979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

C-plane yellow–green InGaN micro-light-emitting diodes with 1.55 GHz modulation bandwidth for free-space visible-light communication 用于自由空间可见光通信的c平面黄绿色InGaN微发光二极管，调制带宽为1.55 GHz

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-12 DOI: 10.1063/5.0346978

Jianhui Liu,Hongjian Li,Guanqi Li,Chunyu Liu,Yang Su,Yunpeng Ge,Zihan Xia,Ahmad Shuhaimi,Jinchai Li,Zhaoxia Bi,Panpan Li,Kai Huang,Rong Zhang

{"title":"C-plane yellow–green InGaN micro-light-emitting diodes with 1.55 GHz modulation bandwidth for free-space visible-light communication","authors":"Jianhui Liu,Hongjian Li,Guanqi Li,Chunyu Liu,Yang Su,Yunpeng Ge,Zihan Xia,Ahmad Shuhaimi,Jinchai Li,Zhaoxia Bi,Panpan Li,Kai Huang,Rong Zhang","doi":"10.1063/5.0346978","DOIUrl":"https://doi.org/10.1063/5.0346978","url":null,"abstract":"Yellow–green InGaN micro-light-emitting diodes (micro-LEDs) are attractive transmitters for visible-light communication, yet high-In-content quantum wells usually impose a trade-off among efficiency, optical power, and modulation speed. Here, we report c-plane single-quantum-well InGaN micro-LEDs emitting near 545 nm that combine milliwatt-level output at high-current density with gigahertz-class small-signal modulation. Devices with lateral sizes of 40 and 60 μm exhibit peak external quantum efficiencies (EQEs) of 5.36% and 5.35%, respectively, and retain EQEs of 2.84% and 2.83% at 1000 A cm−2. The 40 μm device reaches a maximum −3dB bandwidth of 1.55 GHz and maintains gigahertz-class bandwidth from a high operation temperature (300–375 K). We also demonstrate 2.0 Gbit/s free-space non-return-to-zero on–off keying transmission with an estimated bit-error rate below the 7% overhead hard-decision forward-error-correction limit. These results show that c-plane yellow–green InGaN micro-LEDs can provide compact, efficient, and thermally robust transmitters for high-speed free-space visible-light links.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"63 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149209028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Competing hysteresis mechanisms in HZO/MoS2 transistors with a metal–ferroelectric–metal–insulator–semiconductor gate stack 金属-铁电-金属-绝缘体-半导体栅极叠层HZO/MoS2晶体管的竞争磁滞机制

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-12 DOI: 10.1063/5.0346280

Kira S. Kolinko,Andrei D. Kudlaev,Maxim G. Kozodaev,Andrey M. Markeev,Anna G. Chernikova

{"title":"Competing hysteresis mechanisms in HZO/MoS2 transistors with a metal–ferroelectric–metal–insulator–semiconductor gate stack","authors":"Kira S. Kolinko,Andrei D. Kudlaev,Maxim G. Kozodaev,Andrey M. Markeev,Anna G. Chernikova","doi":"10.1063/5.0346280","DOIUrl":"https://doi.org/10.1063/5.0346280","url":null,"abstract":"Ferroelectric field-effect transistors based on hafnium oxide offer a versatile platform for advanced memory concepts. Here, we demonstrate a proof-of-concept top-gated Hf0.5Zr0.5O2-based transistor integrating a metal–ferroelectric–metal–insulator–semiconductor (MFMIS) gate stack with a two-dimensional MoS2 channel. The implementation of such an architecture is particularly challenging in MoS2, where the strong sensitivity of the channel to trapped charge can further complicate the balance between ferroelectric switching and charge redistribution within the MFMIS stack. By varying the MFM-to-MIS area ratio and the applied gate-voltage amplitude, we observe a systematic evolution of the transfer hysteresis consistent with competing ferroelectric polarization switching and trap-related contributions. Temperature-dependent measurements, zero-bias write/read experiments, and compact Simulation Program with Integrated Circuit Emphasis modeling provide additional support for this interpretation. Despite the non-optimized gate stack, a substantial ferroelectric contribution to the device response is retained, while retention measurements reveal limitations associated with depolarization and trapping. These results demonstrate the feasibility of MFMIS ferroelectric transistors based on MoS2 and provide a basis for further optimization of their gate-stack design and memory performance.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"25 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149210397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Self-assembled molecules enable robust interfaces for efficient and stable quantum dot light-emitting diodes 自组装分子为高效稳定的量子点发光二极管提供了强大的界面

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-12 DOI: 10.1063/5.0352323

Jing-Jing Bao,Bo-Chen Liu,Yan-Lin Xu,Chun-Lin Li,Qi Sun,Shuang-Qiao Sun,Man-Keung Fung

{"title":"Self-assembled molecules enable robust interfaces for efficient and stable quantum dot light-emitting diodes","authors":"Jing-Jing Bao,Bo-Chen Liu,Yan-Lin Xu,Chun-Lin Li,Qi Sun,Shuang-Qiao Sun,Man-Keung Fung","doi":"10.1063/5.0352323","DOIUrl":"https://doi.org/10.1063/5.0352323","url":null,"abstract":"Colloidal quantum dot light-emitting diodes (QLEDs) are promising candidates for next-generation display technologies due to their narrow emission bandwidth, wavelength tunability, and solution processability. However, the device performance is severely limited by inefficient hole injection, primarily due to surface defects or energy-level misalignments, especially at the buried interface of the hole transport layer. Here, we employ a carbazole-based phosphonic acid, [2-(3,6-dimethoxy-9H-carbazol-9-yl)ethyl]phosphonic acid (MeO-2PACz), to modify the surface of nickel oxide (NiOx). MeO-2PACz is anchored to the NiOx surface via chemical interactions between its phosphonic acid groups and the NiOx, thereby enhancing interfacial adhesion and effectively passivating surface defects. Additionally, MeO-2PACz induces a downward shift in the NiOx energy level, reducing the hole injection barrier within the device. As a result, MeO-2PACz-treated QLEDs, emitting at 626 nm, exhibit a peak external quantum efficiency of 25.1%, a maximum luminance of nearly 65 000 cd m−2, and a T95 operational lifetime of over 385 000 h at an initial luminance of 100 cd m−2.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"280 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149208989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Universality of magnetic susceptibility in the conical state of the kagome ferromagnet Fe3Sn2 铁磁体Fe3Sn2圆锥形磁化率的普遍性

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-12 DOI: 10.1063/5.0342307

Lilian Prodan,Donald M. Evans,Lukas Puntigam,István Kézsmárki,Vladimir Tsurkan

引用次数: 0

Conformational ordering in two-dimensional (PEA)2PbBr4 single crystals driven by thermal annealing 热退火驱动二维（PEA）2PbBr4单晶的构象排序

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-12 DOI: 10.1063/5.0349738

Weizhi Yu,Yingming Song,Shixiong Zhang,Zhiqiang Wang,Yi Xie,Xiaoyi Liu,Junkang Wu,Weikun Ge,Meifeng Liu,Ning Tang

{"title":"Conformational ordering in two-dimensional (PEA)2PbBr4 single crystals driven by thermal annealing","authors":"Weizhi Yu,Yingming Song,Shixiong Zhang,Zhiqiang Wang,Yi Xie,Xiaoyi Liu,Junkang Wu,Weikun Ge,Meifeng Liu,Ning Tang","doi":"10.1063/5.0349738","DOIUrl":"https://doi.org/10.1063/5.0349738","url":null,"abstract":"Along with their improved stability and tunable quantum well structures, two-dimensional (2D) perovskites have become potential candidates for developing high-efficiency optoelectronic devices, while the atomic configuration of the materials governs their optoelectronic properties. In this work, direct experimental evidence for conformational ordering in 2D (PEA)2PbBr4 single crystals driven by thermal annealing was obtained. Upon post-annealing at 160 °C, an ordered phase with a larger d-spacing emerges, which was unambiguously confirmed by x-ray diffraction patterns. The organic cations exhibit a perpendicular orientation relative to the 2D plane, as evidenced by the infrared-active C–C stretching mode. In addition, the reduced in-plane anisotropy of two-photon excited photoluminescence indicates that the tilting of [PbBr6]4− octahedra in the inorganic layers was suppressed after post-annealing. The observed structural ordering induced by thermal annealing furnishes important scientific support for the application of 2D perovskites in optoelectronic devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"169 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149209024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Indentation size effect in Mg2C60 governed by depth-dependent activation of shear bands and localized amorphization Mg2C60中压痕尺寸效应由剪切带的深度依赖激活和局部非晶化控制

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-12 DOI: 10.1063/5.0357238

Dong Wang,Fei Pan,Wei Jiang,Xinke Li,Shuhui Yan,Binzhao Li,Guorui Wang,Yanwu Zhu,Zhong Zhang

{"title":"Indentation size effect in Mg2C60 governed by depth-dependent activation of shear bands and localized amorphization","authors":"Dong Wang,Fei Pan,Wei Jiang,Xinke Li,Shuhui Yan,Binzhao Li,Guorui Wang,Yanwu Zhu,Zhong Zhang","doi":"10.1063/5.0357238","DOIUrl":"https://doi.org/10.1063/5.0357238","url":null,"abstract":"Indentation size effects in crystalline solids are commonly associated with dislocation-mediated strain gradients. Here, we show that the layered molecular crystal Mg2C60 exhibits a distinct small-scale response. Continuous stiffness nanoindentation reveals that both hardness and modulus increase as the indentation depth decreases from 1 μm to 100 nm, notably deviating from classical dislocation-based predictions. Cross-sectional focused ion beam–transmission electron microscopy further reveals an evolution from relatively sparse, preferentially oriented shear bands at 0.5 μm to a spatially extended, multi-oriented shear-band network at 1 μm, with localized amorphization confined to selected shear-localized regions. The mechanical measurements and structural observations support a depth-dependent evolution from a more confined deformation state toward distributed shear localization at larger indentation depths. The results demonstrate that bonding hierarchy and structural discreteness, rather than conventional strain-gradient hardening alone, govern the depth-dependent indentation response of Mg2C60.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"52 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149208981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Josephson parametric amplifier with third-order resonator impedance matching 具有三阶谐振器阻抗匹配的约瑟夫森参数放大器

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-12 DOI: 10.1063/5.0347297

Quan Zuo,Kaixuan Zhang,Wenqu Xu,Junliang Jiang,Tingting Guo,Shiyao Yang,Tianshi Zhou,Mingyuan Yu,Yongyang Yu,Junzhou Zhang,Binglin Li,Jiyuan Zhu,Jiazheng Pan,Jinpeng Li,Huabing Wang,Chunhai Cao,Guozhu Sun,Peiheng Wu

引用次数: 0

p -type Ohmic contact engineering in TMDs via MoO3-induced interface dipoles 基于moo3诱导界面偶极子的TMDs p型欧姆接触工程

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-12 DOI: 10.1063/5.0342112

Kai Shi,Xinru Xu,Shuai Lang,Shun Song,Shaoqiang Guo,Haishan Zhang,Juan Lyu,Jian Gong

{"title":"p\u0000 -type Ohmic contact engineering in TMDs via MoO3-induced interface dipoles","authors":"Kai Shi,Xinru Xu,Shuai Lang,Shun Song,Shaoqiang Guo,Haishan Zhang,Juan Lyu,Jian Gong","doi":"10.1063/5.0342112","DOIUrl":"https://doi.org/10.1063/5.0342112","url":null,"abstract":"Two-dimensional transition-metal dichalcogenide (TMD) electronics are often limited by high contact resistance arising from Fermi-level pinning and van der Waals tunneling barriers. Conventional bulk-doping approaches are generally incompatible with atomically thin materials because they can cause severe lattice damage, whereas interfacial charge-transfer doping offers a nondestructive alternative. Here, we investigate a monolayer MoO3 interlayer inserted between metal electrodes and TMD channels to realize p-type Ohmic contacts. First-principles calculations show that the high electron affinity of MoO3 drives electron transfer from the TMD and generates interfacial dipoles that shift the TMD Fermi level toward the valence-band edge. The MoO3 interlayer also spatially separates the metal from the TMD, thereby reducing gap states associated with direct metal–TMD hybridization. The contact properties of metal–MoO3–TMD heterostructures depend strongly on the MoO3–TMD band alignment: type-II MoO3–MoS2 interfaces exhibit reduced but generally finite hole Schottky barriers, whereas type-III MoO3–WSe2 interfaces produce favorable p-type Ohmic contacts. Density-functional-theory-based nonequilibrium Green's function simulations further predict enhanced on-state currents in MoO3-intercalated devices under idealized ballistic conditions. These results identify band-alignment-controlled interfacial dipoles as the dominant mechanism by which atomically thin MoO3 improves p-type TMD contacts for two-dimensional complementary electronics.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"32 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149208938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0