Wenbo Li, Yuxuan Zhang, Vijay Gopal Thirupakuzi Vangipuram, Hongping Zhao, Steven A. Ringel, Aaron R. Arehart
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The impact of laser and growth rate on trap formation in conventional and laser-assisted MOCVD GaN
A systematic deep-level transient and optical spectroscopy study indicated the relationship between trap concentrations and the growth rate of metal–organic chemical vapor deposition (MOCVD) GaN. The EC-0.57, EC-0.72, and EC-0.9 eV traps were generally insensitive to the growth rate, while the C-related EC-1.35 and EC-3.28 eV traps and the VGa- and/or C-related EC-2.6 eV trap increased monotonically over the growth rate. The C/VGa-related traps are also responsible for the doping compensation in high-growth-rate MOCVD GaN. The laser-assisted MOCVD displayed potential in suppressing trap formation without sacrificing the high growth rate, paving the way for future thick vertical GaN applications.
期刊介绍:
Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology.
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