{"title":"利用电荷俘获技术的单片集成β -Ga2O3逆变器","authors":"MuJun Li, MingHao He, XiaoHui Wang, Yang Jiang, HaoZhe Yu, ChenKai Deng, Kah-Wee Ang, Qing Wang, HongYu Yu","doi":"10.1063/5.0287286","DOIUrl":null,"url":null,"abstract":"In this work, high-performance monolithic integrated β-Ga2O3 inverters are proposed, in which the enhancement mode (E-mode) devices are implemented using a charge trapping layer (CTL) technique. Leveraging the threshold voltage tunability of the CTL-based E-mode devices, the inverters demonstrate robust operation across a wide range (5–18 V) of supply voltage (VDD). In addition, the inverter with a β value of 40 achieves an ultralow output low voltage (VOL = 0.01 V) at VDD of 18 V, as well as excellent output swing/VDD ratio (17.99 V/18 V), noise margin capability (NML/NMH = 7.65 V/7.55 V), maximum voltage gain (9.6 V/V), and maximum power consumption (3.7 × 10−4 W). Furthermore, dynamic testing was further conducted to investigate the relationship between the dimensional matching of E/D-mode devices and key parameters such as transmission delay and output characteristics. These findings provide insights into the fabrication of monolithic integrated β-Ga2O3 inverters.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"3 1","pages":""},"PeriodicalIF":3.6000,"publicationDate":"2025-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Monolithic integrated β -Ga2O3 inverters using charge trapping technique\",\"authors\":\"MuJun Li, MingHao He, XiaoHui Wang, Yang Jiang, HaoZhe Yu, ChenKai Deng, Kah-Wee Ang, Qing Wang, HongYu Yu\",\"doi\":\"10.1063/5.0287286\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, high-performance monolithic integrated β-Ga2O3 inverters are proposed, in which the enhancement mode (E-mode) devices are implemented using a charge trapping layer (CTL) technique. Leveraging the threshold voltage tunability of the CTL-based E-mode devices, the inverters demonstrate robust operation across a wide range (5–18 V) of supply voltage (VDD). In addition, the inverter with a β value of 40 achieves an ultralow output low voltage (VOL = 0.01 V) at VDD of 18 V, as well as excellent output swing/VDD ratio (17.99 V/18 V), noise margin capability (NML/NMH = 7.65 V/7.55 V), maximum voltage gain (9.6 V/V), and maximum power consumption (3.7 × 10−4 W). Furthermore, dynamic testing was further conducted to investigate the relationship between the dimensional matching of E/D-mode devices and key parameters such as transmission delay and output characteristics. These findings provide insights into the fabrication of monolithic integrated β-Ga2O3 inverters.\",\"PeriodicalId\":8094,\"journal\":{\"name\":\"Applied Physics Letters\",\"volume\":\"3 1\",\"pages\":\"\"},\"PeriodicalIF\":3.6000,\"publicationDate\":\"2025-10-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applied Physics Letters\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1063/5.0287286\",\"RegionNum\":2,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0287286","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
Monolithic integrated β -Ga2O3 inverters using charge trapping technique
In this work, high-performance monolithic integrated β-Ga2O3 inverters are proposed, in which the enhancement mode (E-mode) devices are implemented using a charge trapping layer (CTL) technique. Leveraging the threshold voltage tunability of the CTL-based E-mode devices, the inverters demonstrate robust operation across a wide range (5–18 V) of supply voltage (VDD). In addition, the inverter with a β value of 40 achieves an ultralow output low voltage (VOL = 0.01 V) at VDD of 18 V, as well as excellent output swing/VDD ratio (17.99 V/18 V), noise margin capability (NML/NMH = 7.65 V/7.55 V), maximum voltage gain (9.6 V/V), and maximum power consumption (3.7 × 10−4 W). Furthermore, dynamic testing was further conducted to investigate the relationship between the dimensional matching of E/D-mode devices and key parameters such as transmission delay and output characteristics. These findings provide insights into the fabrication of monolithic integrated β-Ga2O3 inverters.
期刊介绍:
Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology.
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