Applied Physics Letters最新文献_第3页

Monolayer-scale AlN/GaN digital alloys grown by plasma-assisted molecular beam epitaxy 通过等离子体辅助分子束外延技术生长的单层级氮化铝/氮化镓数字合金

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-09-10 DOI: 10.1063/5.0215886

Siqi Li, Xiao Liang, Pengfei Shao, Songlin Chen, Zhenhua Li, Xujun Su, Tao Tao, Zili Xie, M. Ajmal Khan, Li Wang, T. T. Lin, Hideki Hirayama, Bin Liu, Dunjun Chen, Ke Wang, Rong Zhang

{"title":"Monolayer-scale AlN/GaN digital alloys grown by plasma-assisted molecular beam epitaxy","authors":"Siqi Li, Xiao Liang, Pengfei Shao, Songlin Chen, Zhenhua Li, Xujun Su, Tao Tao, Zili Xie, M. Ajmal Khan, Li Wang, T. T. Lin, Hideki Hirayama, Bin Liu, Dunjun Chen, Ke Wang, Rong Zhang","doi":"10.1063/5.0215886","DOIUrl":"https://doi.org/10.1063/5.0215886","url":null,"abstract":"The efficiency of usual AlGaN based deep ultraviolet light-emitting devices is still quite low. The difficulties are basically originated from the fundamental material properties of AlGaN. This work has adopted monolayer-scale (AlN)m/(GaN)n ordered digital alloys (DAs) as alternatives to AlGaN random alloys, m and n are the numbers of monolayers. X-ray diffraction scans have demonstrated clear satellite peaks, verifying good periodicity of AlN/GaN DAs grown by molecular beam epitaxy (MBE), and transmission electron microscopy results have revealed atomically sharp and smooth interfaces and quite precise m:n values agreeing well with designs. The electron densities of Si-doped (AlN)m/(GaN)n DAs with high equivalent Al compositions are significantly higher than those of conventional AlGaN:Si random alloys grown in the same MBE system. Si dopant ionization energies in DAs are only 2–5 meV, much lower than that for usual random alloys. The red shift of the light emission for DAs with thinner AlN barriers has suggested strong coupling between the GaN wells and thus formation of a miniband in a vertical direction. The results have demonstrated the potential of the (AlN)m/(GaN)n DAs as electronically functional alternatives for various device applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":4.0,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142166359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhanced and tunable near-field thermophotovoltaics driven by hybrid polaritons 由混合极化子驱动的增强型可调近场热光电技术

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-09-10 DOI: 10.1063/5.0220172

Lin Li, Xiaohu Wu, Haotuo Liu, Zhimin Yang, Kun Yu

引用次数: 0

Transmission interference fringe (TIF) technique for the dynamic visualization of evaporating droplet 用于蒸发液滴动态可视化的透射干涉条纹 (TIF) 技术

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-09-10 DOI: 10.1063/5.0223571

Iltai Isaac Kim, Yang Lie, Hongkyu Yoon, Jeffrey A. Greathouse

{"title":"Transmission interference fringe (TIF) technique for the dynamic visualization of evaporating droplet","authors":"Iltai Isaac Kim, Yang Lie, Hongkyu Yoon, Jeffrey A. Greathouse","doi":"10.1063/5.0223571","DOIUrl":"https://doi.org/10.1063/5.0223571","url":null,"abstract":"The transmission interference fringe (TIF) technique was developed to visualize the dynamics of evaporating droplets based on the Reflection Interference Fringe (RIF) technique for micro-sized droplets. The geometric formulation was conducted to determine the contact angle (CA) and height of macro-sized droplets without the need for the prism used in RIF. The TIF characteristics were analyzed through experiments and simulations to demonstrate a wider range of contact angles from 0 to 90°, in contrast to RIF's limited range of 0–30°. TIF was utilized to visualize the dynamic evaporation of droplets in the constant contact radius (CCR) mode, observing the droplet profile change from convex-only to convex-concave at the end of dry-out from the interference fringe formation. The TIF also observed the contact angle increase from the fringe radius increase. This observation is uniquely reported as the interference fringe (IF) technique can detect the formation of interference fringe between the reflection from the center convex profile and the reflection from the edge concave profile on the far-field screen. Unlike general microscopy techniques, TIF can detect far-field interference fringes as it focuses beyond the droplet-substrate interface. The formation of the convex-concave profile during CCR evaporation is believed to be influenced by the non-uniform evaporative flux along the droplet surface.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":4.0,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142166399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Space charge-induced capacitance recovery in blue quantum dot light-emitting diodes 蓝色量子点发光二极管中的空间电荷诱导电容恢复

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-09-10 DOI: 10.1063/5.0226752

Xiangwei Qu, Jingrui Ma, Depeng Li, Kai Wang, Xiao Wei Sun

引用次数: 0

Kinetics of monolayer MoS2-encapsulated nanobubbles on hexagonal boron nitride substrates 六方氮化硼基底上的单层 MoS2- 封装纳米气泡动力学

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-09-10 DOI: 10.1063/5.0224361

Zihan Liu, Yingchun Jiang, Dingli Wang, Junpeng Lai, Huimin Zhou, Jia Deng, Changhong Ke

引用次数: 0

Gallium nitride-based resonant tunneling diode oscillators 基于氮化镓的谐振隧道二极管振荡器

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-09-10 DOI: 10.1063/5.0225312

Masahiro Murayama, Hisayoshi Motobayashi, Yukio Hoshina, Miwako Shoji, Yoshiro Takiguchi, Hiroyuki Miyahara, Takahiro Koyama, Noriyuki Futagawa

引用次数: 0

A perspective on magnetic field-enhanced electrocatalytic water splitting 磁场增强型电催化水分离透视

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-09-10 DOI: 10.1063/5.0229187

Yuanyuan Zhang, Mengxin Chen, Ji Chen, Mingyi Zhang, Ping Xu

引用次数: 0

FeS2/SnS2@C with mosaic-like heterointerface as robust sodium anode 具有镶嵌式异质表面的 FeS2/SnS2@C 可用作坚固的钠阳极

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-09-10 DOI: 10.1063/5.0226473

Miaoxin Di, Tenglong Miao, Zhenqi Song, Suhua Chen, Ying Bai

{"title":"FeS2/SnS2@C with mosaic-like heterointerface as robust sodium anode","authors":"Miaoxin Di, Tenglong Miao, Zhenqi Song, Suhua Chen, Ying Bai","doi":"10.1063/5.0226473","DOIUrl":"https://doi.org/10.1063/5.0226473","url":null,"abstract":"Sodium-ion batteries (SIBs) have been widely researched due to their abundant resource and inherent safety. However, the major challenge for further commercialization of SIBs is the absence of low-priced anode electrodes with high reversible capacity and durability. Herein, a hierarchical heterogeneous structure of FeS2/SnS2@C nanocubes with rich two-dimensional mosaic-like heterointerface and N/S co-doped carbon wrapping is constructed and synthesized, to achieve ultrahigh reversible capacity and long cycling stability as anode of SIBs. Combining x-ray photoelectron spectroscopy, ion diffusion kinetic analysis, and in situ x-ray diffraction, the exquisite hierarchical heterogeneous structure of FeS2/SnS2@C could promote charge/electrons transfer and accelerate ion diffusion kinetics. As expected, the FeS2/SnS2@C anode shows superior reversible capacity (867.5 mA h g−1 at 0.1 A g−1), good rate performance (718.9 mA h g−1 at 5.0 A g−1), and long cycle stability (738.0 mA h g−1 after 1200 cycles at 5.0 A g−1) with Na metal as counter electrode. This work proves that the effectiveness of heterojunction interfaces for promoting Na+ diffusion is highlighted by such capabilities.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":4.0,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142166394","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effective control of magnetism and transport properties of monolayer WV2N4 with two magnetic atomic layers and its van der Waals heterostructure 有效控制具有两个磁性原子层的单层 WV2N4 及其范德华异质结构的磁性和传输特性

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-09-10 DOI: 10.1063/5.0217334

Xiaoyan Guo, Xiaolin Zhang, Yu Zhu, Yuheng Liu, Xiufeng Han, Yu Yan

{"title":"Effective control of magnetism and transport properties of monolayer WV2N4 with two magnetic atomic layers and its van der Waals heterostructure","authors":"Xiaoyan Guo, Xiaolin Zhang, Yu Zhu, Yuheng Liu, Xiufeng Han, Yu Yan","doi":"10.1063/5.0217334","DOIUrl":"https://doi.org/10.1063/5.0217334","url":null,"abstract":"The large magneto-resistance (MR) effect produced by electric control of the magnetic state for van der Waals (vdW) heterostructures composed of vdW intrinsic magnets holds great significance for low-dissipation spintronic devices. Our first-principles calculations reveal that the proposed monolayer WV2N4 is a ferromagnetic (FM) metal with two magnetic V atomic layers, and the interlayer magnetic coupling between two V atomic layers can be switched from FM to antiferromagnetic coupling by applying a small compressive strain. Interestingly, a large MR ratio of 253% is achieved in the proposed graphite/monolayer WV2N4/graphite vdW heterostructure using a −1.5% compressive strain. Combining the strain-induced change in magnetism of monolayer WV2N4 and the graphite/monolayer WV2N4/graphite vdW heterostructure with the inverse piezoelectricity of piezoelectric materials, a feasible strategy is proposed to achieve electric control of the interlayer magnetic coupling of monolayer WV2N4 in the graphite/monolayer WV2N4/graphite vdW heterostructure clamped by piezoelectric materials by utilizing the inverse piezoelectricity, thereby generating a large MR ratio in the graphite/monolayer WV2N4/graphite vdW heterostructure clamped by the piezoelectric material. Our work presents a promising avenue for developing energy-efficient spintronic devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":4.0,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142166392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Impact of orbital hybridization on spin-polarized electronic transport through Ni-MAPbI3 interfaces 轨道杂化对通过 Ni-MAPbI3 界面的自旋极化电子传输的影响

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-09-10 DOI: 10.1063/5.0222322

Xiangpeng Zhang, Wei Li, Yang Li, Linze Jiang, Xixiang Zhu, Haomiao Yu, Jinpeng Li, Yumeng Shi, Ding Yi, Kai Wang

{"title":"Impact of orbital hybridization on spin-polarized electronic transport through Ni-MAPbI3 interfaces","authors":"Xiangpeng Zhang, Wei Li, Yang Li, Linze Jiang, Xixiang Zhu, Haomiao Yu, Jinpeng Li, Yumeng Shi, Ding Yi, Kai Wang","doi":"10.1063/5.0222322","DOIUrl":"https://doi.org/10.1063/5.0222322","url":null,"abstract":"The solution-processed methylammonium lead tri-iodine (MAPbI3), with long spin lifetimes and large spin diffusion lengths, has merit for developing stable perovskite spin valves (PeSV) with low saturation fields. By far, it remains challenging to avoid ill-defined ferromagnet-MAPbI3 interfaces during device fabrications using solution methods and to quantify the hybridized interfacial electronic and magnetic structures. Herein, an annealing-free method was developed for the fabrication of MAPbI3 based PeSV. In comparison to a thermally annealed device, an improved room temperature magnetoresistance (MR) was achieved. We found remarkable interfacial contributions to anisotropic magnetoresistance and MR. The first-principles calculation was further adopted to quantify the interfacial spin and orbital moments. Our results suggest that the orbital hybridization and the spin transfer are remarkable for the formation of the spin-dependent interfacial density of states. It consequently affects magnetic switching behaviors. This study holds an exceptionally important role for a deep understanding of the spin-polarized electronic transport through the Ni-MAPbI3 hybridized interface.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":4.0,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142166393","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0