Applied Physics Letters最新文献_第3页

Thickness dependence of the electro-optic properties in epitaxial Hf0.5Zr0.5O2 thin films: Evident response down to 3 nm 外延Hf0.5Zr0.5O2薄膜电光特性的厚度依赖性：低至3nm的明显响应

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-06-17 DOI: 10.1063/5.0267559

Afeefa Dastgir, Xueyou Yuan, Yufan Shen, Daisuke Kan, Yuichi Shimakawa, Hinata Sawaki, Shinya Kondo, Tomoaki Yamada

引用次数: 0

Nanoscopic structural and emission properties of red InGaN hybrid single quantum wells 红色InGaN杂化单量子阱的纳米结构和发射特性

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-06-17 DOI: 10.1063/5.0255145

Zhaozong Zhang, Ryota Ishii, Kanako Shojiki, Mitsuru Funato, Daisuke Iida, Kazuhiro Ohkawa, Yoichi Kawakami

{"title":"Nanoscopic structural and emission properties of red InGaN hybrid single quantum wells","authors":"Zhaozong Zhang, Ryota Ishii, Kanako Shojiki, Mitsuru Funato, Daisuke Iida, Kazuhiro Ohkawa, Yoichi Kawakami","doi":"10.1063/5.0255145","DOIUrl":"https://doi.org/10.1063/5.0255145","url":null,"abstract":"Using atomic force microscopy (AFM) and scanning near-field optical microscopy (SNOM)-photoluminescence (PL) spectroscopy (SNOM-PL), we study the nanoscopic structural and emission properties of a red InGaN hybrid single quantum well (SQW), consisting of a blue and a red InGaN SQW. AFM images reveal the presence of threading-dislocation (TD)-related V-pits and shallow trench defects. The trench defects are classified into three categories on the basis of their height relative to a flat QW: lowered-, level-, and raised-center trench defects. SNOM-PL images demonstrate that TDs and all types of shallow trench defects exhibit a low emission intensity, indicating that they act as non-radiative recombination centers. Unlike previous studies on low-In content samples, all the trench defects exhibit a low emission intensity in our high-In content sample because of In segregation. Given the correlation of dark emission positions between the blue and red emissions, as well as the lower screw-type TD density at the surface than at the n-GaN layer, screw-type TDs should be one of the triggers in the formation of shallow trench defects. Therefore, to enhance the external quantum efficiency of hybrid InGaN red LEDs, it is crucial to suppress In segregation within shallow trench defects and decrease screw-type TD density.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"10864 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144311353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of intermolecular explosion on thermal conductivity in multi-graphene structures 分子间爆炸对多石墨烯结构导热性的影响

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-06-17 DOI: 10.1063/5.0269483

V. A. Shulyak, N. S. Morozov, R. A. Minushkin, K. E. Klyukova, V. Yu. Gubin, A. V. Gracheva, S. N. Chebotarev, V. V. Avdeev

{"title":"Effect of intermolecular explosion on thermal conductivity in multi-graphene structures","authors":"V. A. Shulyak, N. S. Morozov, R. A. Minushkin, K. E. Klyukova, V. Yu. Gubin, A. V. Gracheva, S. N. Chebotarev, V. V. Avdeev","doi":"10.1063/5.0269483","DOIUrl":"https://doi.org/10.1063/5.0269483","url":null,"abstract":"We have developed a technological process for obtaining compacted multi-graphene structures (CMGSs) with the thermal conductivity of 500 W/(m×K). We propose the “Soft” regime of graphite intercalation procedure, which yields conglomerates with alternating stacks of five graphene layers, while the “Standard” regime is characterized by the formation of alternating stacks of three graphene layers. X-ray diffraction analysis and transmission electron microscopy studies of Soft and Standard CMGS have shown that the thermal conductivity of these materials is limited by defect density, size distribution, and misorientation of nanocrystallites. The effect of micro-deformations and residual macro-stresses on thermal conductivity of CMGS is discussed. The Soft method facilitated the formation of CMGSs with a less disrupted internal structure, characterized by increased nanocrystallites and reduced misorientation angles relative to the Standard approach, resulting in a 38% enhancement in thermal conductivity. A refined model is proposed that incorporates these key structural factors governing heat transport in CMGSs. The proposed method made possible the preparation of CMGS-based material with a thermal conductivity 25% higher and with a density five times lower than those of copper. Our findings demonstrate that precise regulation of the intermolecular explosion parameters enables the design of lightweight, flexible carbon-based materials with engineered thermal conductivity characteristics for advanced thermal-management applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"25 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144311356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Doping optimization of charge state stability for shallow nitrogen-vacancy center ensembles in HPHT diamonds HPHT钻石中浅氮空位中心系综电荷态稳定性的掺杂优化

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-06-17 DOI: 10.1063/5.0264044

Qin Wu, Die Fang, Yu Ma, Yi Zhu, Xiaoli Dai, Yaoguo Gao, Shansi Dong, Zhifei Yu, Peng Qian, Jianpei Geng, Jing-Wei Fan, Bing Chen

{"title":"Doping optimization of charge state stability for shallow nitrogen-vacancy center ensembles in HPHT diamonds","authors":"Qin Wu, Die Fang, Yu Ma, Yi Zhu, Xiaoli Dai, Yaoguo Gao, Shansi Dong, Zhifei Yu, Peng Qian, Jianpei Geng, Jing-Wei Fan, Bing Chen","doi":"10.1063/5.0264044","DOIUrl":"https://doi.org/10.1063/5.0264044","url":null,"abstract":"Since nitrogen-vacancy (NV) centers in diamond have emerged as crucial quantum sensors in physics and biology, the massive preparation of high-quality and high-concentration shallow NV center samples has become urgent and demanding. As NV centers approach the surface and their concentration increases, charge state instability can degrade coherence and introduce additional noise. This problem is further complicated in high-pressure and high-temperature (HPHT) diamonds due to the presence of unclear impurities and inhomogeneous strain. Through optically detected magnetic resonance testing on various implanted samples, we analyzed the spin and charge state properties of shallow NV center ensembles. Our results reveal that the doping dose significantly influences the quantity of NV−, charge, and charge stability. Our findings indicate that over-implanting nitrogen as electron donors before starting graphitization helps stabilize the charge environment of the shallow NV center ensembles. By controlling the nitrogen ion implantation dose, we optimized charge state stability under photoionization and prepared high-quality NV center ensemble samples in HPHT diamonds at the optimal implantation dose range of 2×1013–8×1013 ions/cm2. This method, which relies solely on nitrogen ion implantation and annealing on HPHT diamond, significantly reduces the cost of sensor samples, greatly benefiting the promotion of quantum sensing.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"23 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144311352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-performance nonvolatile spin FETs from 2D metallic ferromagnetic and ferroelectric multiferroic heterostructure 二维金属铁磁和铁电多铁质异质结构的高性能非易失性自旋场效应管

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-06-17 DOI: 10.1063/5.0267449

B. Liu, X. Zhang, W. Hou, H. Feng, Z. Dai, Zhi-Xin Guo

{"title":"High-performance nonvolatile spin FETs from 2D metallic ferromagnetic and ferroelectric multiferroic heterostructure","authors":"B. Liu, X. Zhang, W. Hou, H. Feng, Z. Dai, Zhi-Xin Guo","doi":"10.1063/5.0267449","DOIUrl":"https://doi.org/10.1063/5.0267449","url":null,"abstract":"All-electric-controlled nonvolatile spin field-effect transistors (SFETs) based on 2D multiferroic van der Waals heterostructures hold significant promise for spintronics. However, their performance is constrained by the limited availability of 2D magnetic materials capable of switching between metallic and semiconducting states, with tunable bandgaps controlled by ferroelectric polarization. Most research focuses on modifying semiconducting materials to achieve metallic behavior. We propose an approach that utilizes interface effects to convert metallic 2D magnetic materials into half-metals and induce half-semiconducting behavior via ferroelectric polarization. Density functional theory (DFT) calculations on the CrPS3/Sc2CO2 heterostructure show that Sc2CO2 polarization can modulate the electronic structure of CrPS3, switching it from half-metallic to half-semiconducting. Using this approach, we designed an SFET, and Nonequilibrium Green's function combined with DFT (NEGF-DFT) analysis revealed an on/off current ratio greater than 5.43 × 106%, with nearly 100% spin-polarized current at 6500 μA/μm and a bias voltage below 0.2 V. This method paves the way for high-performance SFETs that exceed the capabilities of current 2D materials.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"14 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144311354","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Broadband merged-element Josephson parametric amplifier 宽带合并元件约瑟夫森参数放大器

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-06-17 DOI: 10.1063/5.0259358

Yuting Sun, Xianke Li, Qingyu Wang, Tairong Bai, Xudong Liao, Dong Lan, Jie Zhao, Yang Yu

引用次数: 0

MoS2–MoSe2 nanoflakes-based n–n heterojunction toward highly sensitive and selective room-temperature NO2 gas sensor 基于MoS2-MoSe2纳米片的n-n异质结用于高灵敏度和选择性室温NO2气体传感器

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-06-17 DOI: 10.1063/5.0274966

Sonika Kodan, Sheetal Issar, Akshay Tomar, V. K. Malik, Ramesh Chandra

{"title":"MoS2–MoSe2 nanoflakes-based n–n heterojunction toward highly sensitive and selective room-temperature NO2 gas sensor","authors":"Sonika Kodan, Sheetal Issar, Akshay Tomar, V. K. Malik, Ramesh Chandra","doi":"10.1063/5.0274966","DOIUrl":"https://doi.org/10.1063/5.0274966","url":null,"abstract":"The present research reports the controlled fabrication of MoS2–MoSe2 hybrid nanostructures utilizing DC magnetron co-sputtering technique for highly selective and sensitive room-temperature (RT) NO2 detection. Among the optimized sensing thin films, the MoS2–MoSe2 sensor with a precisely engineered thickness of ∼350 nm demonstrates an exceptional sensor response of ∼61.3% toward 0.7 ppm NO2 at RT, coupled with a rapid response/recovery time of ∼77/87 s. This superior sensitivity of the MoS2–MoSe2 sensor is attributed to the abundant adsorption sites, the synergistic effects of MoS2–MoSe2 heterostructure, efficient charge transfer dynamics, and the unique n–n heterojunction band alignment, which collectively enhance carrier modulation and gas interaction kinetics. Additionally, the sensor delivers remarkable repeatability over 21 consecutive cycles, long-term operational stability exceeding 80 days, and outstanding selectivity toward NO2 against potentially interfering gases, underscoring its reliability for real-world applications. Thus, the MoS2–MoSe2 nanocomposite sensor emerges as a promising candidate for next-generation NO2 gas sensing, offering a robust platform for real-time air quality monitoring and environmental safety applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"23 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144311522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A high speed response Nafion-based non-volatile RF switch 一种高速响应的非易失性射频开关

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-06-16 DOI: 10.1063/5.0270011

Yehui Shen, Lejie Sheng, Yang Song, Tianyu Zhang, Bowen Cui, Zixuan Wang, Zhikuang Cai, Xianwu Tang, Rongqing Xu, Guangxu Shen, Gangyi Zhu

{"title":"A high speed response Nafion-based non-volatile RF switch","authors":"Yehui Shen, Lejie Sheng, Yang Song, Tianyu Zhang, Bowen Cui, Zixuan Wang, Zhikuang Cai, Xianwu Tang, Rongqing Xu, Guangxu Shen, Gangyi Zhu","doi":"10.1063/5.0270011","DOIUrl":"https://doi.org/10.1063/5.0270011","url":null,"abstract":"Radio frequency (RF) switches are pivotal components in modern wireless communication systems, playing a crucial role in 5 G, Internet of Things (IoT), and satellite communications. Non-volatile devices that offer zero static power consumption and miniaturization present a promising avenue for the fabrication of RF switches through resistive state switching using memristors. Nafion, a fluorosulphonated polytetrafluoroethylene copolymer, served as the dielectric in this study, enabling the preparation of Nafion-based non-volatile RF switches via a micro-nano process. The fabricated Nafion-based non-volatile RF switch exhibits a low insertion loss of 0.68 dB and an isolation of −11.55 dB at 43.5 GHz. It also has a nanosecond switching response time of 45 ns turn-on process, a critical performance metric for non-volatile RF devices. In addition, this device is switched by DC pulses, which significantly reduce the operational energy consumption of the RF switch. This advancement facilitates the development of reconfigurable wireless communication systems with high frequency.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"12 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144304504","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhanced electrostatic energy-storage performances in the high-entropy Bi0.5Na0.5TiO3-based ceramic capacitors 高熵bi0.5 na0.5 tio3基陶瓷电容器的静电储能性能增强

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-06-16 DOI: 10.1063/5.0275797

Wenjie Xie, Wenjing Yu, Yang Yang, Yuanyuan Gong, Huajie Luo, Ji Zhang, Shan-Tao Zhang, Yaojin Wang

引用次数: 0

Transport properties in InAs/InAsSb type-II superlattices: From MWIR to VLWIR InAs/InAsSb ii型超晶格的输运性质：从MWIR到VLWIR

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-06-16 DOI: 10.1063/5.0265432

Maxime Bouschet, Alexander Soibel, David Z. Ting, Anita Fisher, Brian Pepper, Arezou Khoshakhlagh, Sarath Gunapala

{"title":"Transport properties in InAs/InAsSb type-II superlattices: From MWIR to VLWIR","authors":"Maxime Bouschet, Alexander Soibel, David Z. Ting, Anita Fisher, Brian Pepper, Arezou Khoshakhlagh, Sarath Gunapala","doi":"10.1063/5.0265432","DOIUrl":"https://doi.org/10.1063/5.0265432","url":null,"abstract":"In recent years, InAs/InAsSb type-II superlattices have emerged as promising candidates to rival state-of-the-art mercury cadmium telluride systems for mid-wavelength infrared (MWIR) imaging applications. However, extending their performance to longer wavelengths remains a challenge, as the carrier transport properties tend to degrade with the increasing superlattices period required to achieve such wavelengths. Consequently, a detailed investigation of the temperature dependence of carrier transport properties as a function of cutoff wavelength is critical for addressing the forthcoming challenges. In this study, we investigated the carrier transport properties of a large set of InAs/InAsSb type-II superlattices samples, with cutoff wavelength spanning from MWIR to very-long wave infrared (VLWIR). The temperature dependence of the minority carrier lifetime was examined and compared across samples. We also analyzed the temperature dependence of hole diffusion length and mobility using a quantum efficiency model. The mobility of the MWIR samples (≈ 1.6 cm2/V s) was approximately one order of magnitude lower than that of the samples with longer cutoff wavelengths. Further, we extended our analysis by extracting minority transport properties from simulations of dark current density. Our results show that mobility increases with cutoff wavelength, ranging from ≈1.6 cm2/V s for MWIR samples, to ≈ 27 cm2/V s for LWIR, and up to ≈ 200 cm2/V s for VLWIR.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"153 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144304519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0