{"title":"Coupling dynamics of topological states in an acoustic glide-dislocation lattice","authors":"Ming-Zhu Li,Lei Shi,Jun-Xiao Zhao,Zhaojiang Chen,Ya-Xi Shen","doi":"10.1063/5.0355924","DOIUrl":"https://doi.org/10.1063/5.0355924","url":null,"abstract":"We theoretically and experimentally investigate the coupling dynamics between two topological states in an acoustic glide-dislocation lattice. By mapping the lattice structure to a two-waveguide model based on coupled-mode theory, we establish a quantitative link between macroscopic coupling behaviors and microscopic geometric parameters. Then, we demonstrate topological Bloch oscillation and topological supermode propagation under single-state excitation and eigenstate-matched excitation, respectively. The topological Bloch oscillation exhibits strong robustness against structural perturbations, whereas the topological supermode propagation undergoes moderate amplitude and phase fluctuations under the same perturbations. This work lays a solid foundation for exploiting coupled topological states in acoustic wave manipulation and may inspire future applications in integrated acoustic devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"36 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149209030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Guang Yu,Bang Zhou,Shuainan Xu,Xuefeng Liao,Jingxian Xia,Hongya Yu,Zhongwu Liu
{"title":"The effects of CeFe2 phase distribution and magnetic transition on the magnetic behavior of hot-deformed Ce16Fe76Cu2B6 magnet","authors":"Guang Yu,Bang Zhou,Shuainan Xu,Xuefeng Liao,Jingxian Xia,Hongya Yu,Zhongwu Liu","doi":"10.1063/5.0354899","DOIUrl":"https://doi.org/10.1063/5.0354899","url":null,"abstract":"Tailoring the high-melting-point CeFe2 phase is an effective strategy for optimizing the magnetic performance of Ce–Fe–B permanent magnets. Further property enhancement can also be achieved by modifying the distribution, morphology, and magnetic state of the grain-boundary phases. In this study, Cu addition was employed to promote the formation of a thin network-like CeFe2 phase in hot-deformed Ce16Fe76Cu2B6 magnets. The effects of the CeFe2 magnetic transition on the magnetic properties and magnetization behavior were investigated. The results show that the saturation magnetization and maximum energy product of the magnet are significantly enhanced below 200 K. Quantitative analysis reveals that a substantial part of this enhancement is attributable to the increased magnetization and remanence due to the transformation of the CeFe2 phase from paramagnetic to ferromagnetic as the temperature decreases. Henkel plots and first-order reversal curve analyses confirm that the magnet exhibits single-phase-like behavior of magnetization and the demagnetization process is dominated by the Ce2Fe14B phase, indicating well exchange coupled soft magnetic CeFe2 phase and hard magnetic Ce2Fe14B phase at the temperature below 200 K. The average interaction field effectively suppresses premature demagnetization of CeFe2 and ensures stable magnetic coupling. This work can help to understand the effects of CeFe2 phase distribution and magnetism on the performance of Ce–Fe–B based permanent magnets.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"36 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149208980","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yiding Lin,Kwang Hong Lee,Rui-Tao Wen,Jurgen Michel,Chuan Seng Tan
{"title":"Origin of mechanical strain and its spatial uniformity enhancement from recessed silicon nitride sidewall stressor","authors":"Yiding Lin,Kwang Hong Lee,Rui-Tao Wen,Jurgen Michel,Chuan Seng Tan","doi":"10.1063/5.0354968","DOIUrl":"https://doi.org/10.1063/5.0354968","url":null,"abstract":"Wavelength bandwidth is a key performance metric for emerging optical interconnects targeting high-data-rate communications. Strain engineering has proven effective in tailoring the wavelength bandwidth of Ge photonic devices. Although a recessed SiN sidewall stressor was found to extend the absorption edge of Ge photodetectors (PDs) into the L-band with a responsivity improvement of >3×, the working mechanism of the recessed stressor remains poorly understood. Here, we attribute the strain enhancement and its spatial uniformity improvement in Ge PDs to the removal of the compressive strain at the bottom edge corners of the Ge strip. PDs employing the stressors exhibit electrical responses consistent with the mechanism. These findings offer a general framework for applying recessed SiN sidewall stressors to semiconductor photonic devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"13 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149208983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Kevin Vonk,Remon te Brake,Ying Wang,Harold J. W. Zandvliet
{"title":"Is Bi(110) on Ge(111) topological or trivial?","authors":"Kevin Vonk,Remon te Brake,Ying Wang,Harold J. W. Zandvliet","doi":"10.1063/5.0358658","DOIUrl":"https://doi.org/10.1063/5.0358658","url":null,"abstract":"In the realm of topological materials, bismuth is regarded as one of the prime candidates owing to its large spin–orbit coupling. Recent studies have revealed that the rectangular Bi(110) phase may host topological edge or higher-order topological hinge states. The topological nature of Bi(110) depends critically on the buckling of the (110) lattice. Only buckling below 0.1 Å may yield topologically non-trivial states. In this work, we examine the Bi(110) phase grown on Ge(111) using scanning tunneling microscopy and spectroscopy. The Bi(110) islands grow in four sets of threefold high-symmetry directions, which are rotated by ±13.7° and ±16.3° with respect to the high-symmetry directions of the (3×3)R30° Bi wetting layer covering the Ge(111) surface, revealing that the diagonals of the Bi(110) and Bi wetting layer unit cells align. Multilayer Bi(110) islands show a large buckling and an increased density of states at step edges near −0.35 eV. We find this state to emerge from the Bi wetting layer surface rather than the edge itself. The buckling of bilayer Bi(110) islands is lower and lies on the cusp of the trivial to topological transition. However, we find no evidence of electronic enhancement at its edges or corners.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"11 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149208986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Seyyed Moinalden Mostaan,Shuo Lin,Hui Ma,Zezhao Ju,Lan Li,Hongtao Lin
{"title":"Monolithic chalcogenide-on-silicon platform for passive and active integrated photonic devices at the 2\u0000 \u0000 μ\u0000 \u0000 m waveband","authors":"Seyyed Moinalden Mostaan,Shuo Lin,Hui Ma,Zezhao Ju,Lan Li,Hongtao Lin","doi":"10.1063/5.0354287","DOIUrl":"https://doi.org/10.1063/5.0354287","url":null,"abstract":"Extending silicon photonic integrated circuits toward the 2 μm and longer mid-infrared spectral ranges requires photonic platforms that simultaneously provide strong optical confinement, fabrication tolerance, and active-device compatibility. Here, we demonstrate a monolithic chalcogenide-on-silicon strip-loaded platform that integrates a 400-nm-thick Ge25Sb10Se65 layer on a standard 220-nm silicon-on-insulator substrate. The chalcogenide overlayer enhances mode confinement at extended wavelengths while retaining the underlying silicon layer intact for carrier-injection-based modulation. Using this platform, we demonstrate grating couplers with a coupling loss of −4.98 dB and one-dimensional photonic crystal nanobeam resonators with loaded quality factors exceeding 2.6 × 104 near the 2 μm band. Active device is further realized by integrating the chalcogenide strip-loaded waveguide with a PIN-doped silicon layer, where carrier injection induces refractive-index change in silicon. The modulator achieves a DC extinction ratio of 7.61 dB with a 400 mV voltage swing and an average switching time of 3.98 ns. These results demonstrate that monolithic chalcogenide-on-SOI integration can combine fabrication-tolerant passive photonic structures with silicon-based active modulation, offering a scalable route toward extended-wavelength and mid-infrared integrated photonics.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"7 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149209029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}