Applied Physics Letters最新文献_第3页

Sub-ppb NH3 room-temperature sensor using WO3–PANI heterointerfaces on SiNW 在SiNW上采用WO3-PANI异质界面的亚ppb NH3室温传感器

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-08-31 DOI: 10.1063/5.0342318

Siyuan Gao,Kuibo Lan,Zhehang Wang,Ce Yang,Ruibing Chen,Mao Ye,Guoxuan Qin

{"title":"Sub-ppb NH3 room-temperature sensor using WO3–PANI heterointerfaces on SiNW","authors":"Siyuan Gao,Kuibo Lan,Zhehang Wang,Ce Yang,Ruibing Chen,Mao Ye,Guoxuan Qin","doi":"10.1063/5.0342318","DOIUrl":"https://doi.org/10.1063/5.0342318","url":null,"abstract":"Reliable detection of low concentrations of NH3 at room temperature remains challenging. Traditional metal oxide sensors usually rely on relatively high operating temperatures, while conductive polymer sensors often suffer from insufficient stability and limited signal amplification at extremely low concentrations. In this work, a silicon-based NH3 sensor with a WO3–polyaniline (PANI)/silicon nanowire arrays (SiNW) composite structure was constructed. In this structure, WO3 and PANI form n–p heterointerfaces, while the SiNW array provides a three-dimensional scaffold that facilitates gas diffusion and supports charge transport within the sensing layer. Owing to the coupled effects of the WO3–PANI heterointerface and the SiNW-supported sensing architecture, the device exhibits a distinct resistance response to NH3 at room temperature. The obtained sensor shows good selectivity, repeatability, and stability, with a detectable NH3 concentration as low as 0.1 ppb under the present testing conditions. Compared with the PANI/SiNW reference device, the WO3–PANI/SiNW sensor exhibits a stronger response and improved detection capability in the low-concentration range. The enhanced sensing performance is mainly attributed to the synergistic effects of PANI deprotonation, WO3–PANI interfacial barrier modulation, and SiNW-assisted gas diffusion and charge transport. This work provides a feasible strategy for designing low-power, highly sensitive ammonia gas sensors based on interface-modulated polymer/oxide heterostructures.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"19 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148895939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Synergistic thickness–modulus control of wrinkle-driven thermal strain dissipation in flexible heterostructures 柔性异质结构中起皱热应变耗散的协同厚度-模量控制

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-08-31 DOI: 10.1063/5.0353124

Wei Tang,Zhanyu He,Weikang Liu,Lvkuan Zou,Hengguo Lai,Rui Hu,Zhongming Zeng

{"title":"Synergistic thickness–modulus control of wrinkle-driven thermal strain dissipation in flexible heterostructures","authors":"Wei Tang,Zhanyu He,Weikang Liu,Lvkuan Zou,Hengguo Lai,Rui Hu,Zhongming Zeng","doi":"10.1063/5.0353124","DOIUrl":"https://doi.org/10.1063/5.0353124","url":null,"abstract":"Stiff thin films deposited on compliant substrates inevitably suffer from thermal mismatch strain, which severely degrades the performance of strain-sensitive functional materials. A key challenge in thermal stress engineering is to quantify dissipated thermal strain and mitigate thermal stress via interlayer design. Here, we systematically investigate the thermal strain relaxation mechanism governed by structural stiffness (thickness) and intrinsic material properties (Young's modulus) by tuning the thicknesses of the HfO2 interlayer and polyimide (PI). Using a geometry-confined configuration that converts multiaxial strain into a quasi-uniaxial state, we generate one-dimensional wrinkles for quantitative strain analysis. The results show that out-of-plane buckling acts as an effective channel for thermal strain relaxation. Notably, residual strain retention is strongly modulated by the synergy between interlayer thickness and modulus. These findings provide practical mechanical guidelines for flexible heterogeneous integration, highlighting the necessity to balance interfacial rigidity with thermal strain dissipation through tailored material selection and geometric optimization.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"3 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148894093","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Erratum: “Oxygen vacancies-assisted carrier transport toward improved Au/HfO2−x/Si Schottky photodetectors” [Appl. Phys. Lett. 128 , 243302 (2026)] 更正：“氧空位辅助载流子传输到改进的Au/HfO2−x/Si肖特基光电探测器”[应用]。理论物理。Lett. 128,243302 (2026)]

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-08-31 DOI: 10.1063/5.0354479

Long Chang,Zhiyuan Qian,Huimin Zhang,Dawei Cao,Mingming Chen

引用次数: 0

The study of variable-range hopping and quantum interference transport in Bi2Te3/MnTe2 bilayer films Bi2Te3/MnTe2双层膜中变范围跳变和量子干涉输运的研究

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-08-31 DOI: 10.1063/5.0321087

Jian Gao,Xudong Shi,Zhiyu Wang,Xuebiao Yang,Mingze Li,Xuan P. A. Gao,Zhidong Zhang,Zhenhua Wang

{"title":"The study of variable-range hopping and quantum interference transport in Bi2Te3/MnTe2 bilayer films","authors":"Jian Gao,Xudong Shi,Zhiyu Wang,Xuebiao Yang,Mingze Li,Xuan P. A. Gao,Zhidong Zhang,Zhenhua Wang","doi":"10.1063/5.0321087","DOIUrl":"https://doi.org/10.1063/5.0321087","url":null,"abstract":"In this study, we synthesize Bi2Te3/MnTe2 bilayer films via pulsed laser deposition. An approximate 4.3% lattice expansion in the MnTe2 layer is attributed to interfacial strain, which suppresses its antiferromagnetic transition temperature. Transport studies reveal a parallel conduction model in the bilayer films. The temperature dependence of low-temperature resistivity is governed by two-dimensional variable-range hopping from disordered bulk states, whereas the magnetoresistance behavior is dominated by quantum interference effects of topological surface states or interfacial states. A distinct crossover between positive magnetoresistance and negative magnetoresistance is observed, which depends strongly on temperature and magnetic field. The overall electrical transport behavior of the system originates from several coexisting physical channels: variable-range hopping, weak antilocalization (WAL) quantum interference, orbital wavefunction compression, and spin-blockade-induced magnetoresistance. For pure MnTe2 films, the WAL quantum interference contribution is negligible, whereas such quantum interference dominates the low-field transport response in Bi2Te3/MnTe2 composite films. This effect arises from the interplay between the magnetic order in MnTe2 and the topological surface states in Bi2Te3 across the interface. The characteristic field and temperature of the weak localization/WAL crossover can be effectively modulated by varying the layer thicknesses. These results highlight the important role of magnetic–topological coupling in engineering quantum transport properties and demonstrate that the Bi2Te3/MnTe2 system provides a promising platform for investigating rich quantum transport phenomena and designing future spintronic devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"56 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148894026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Nitrogen-graded electrostatic compensation for normally-off β-Ga2O3 planar-gate current-aperture vertical electron transistors 常关β-Ga2O3平面栅电流-孔径垂直电子晶体管的氮梯度静电补偿

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-08-31 DOI: 10.1063/5.0349212

Jiahao Yao,Hehe Gong,Gaofu Guo,Jiazhao Jia,Anjing Luo,Xinxin Yu,Zhaoxuan Fang,Fang-Fang Ren,Shulin Gu,Rong Zhang,Yuhao Zhang,Xiaodong Zhang,Jiandong Ye

{"title":"Nitrogen-graded electrostatic compensation for normally-off β-Ga2O3 planar-gate current-aperture vertical electron transistors","authors":"Jiahao Yao,Hehe Gong,Gaofu Guo,Jiazhao Jia,Anjing Luo,Xinxin Yu,Zhaoxuan Fang,Fang-Fang Ren,Shulin Gu,Rong Zhang,Yuhao Zhang,Xiaodong Zhang,Jiandong Ye","doi":"10.1063/5.0349212","DOIUrl":"https://doi.org/10.1063/5.0349212","url":null,"abstract":"Gallium oxide (Ga2O3) vertical transistors are promising for next-generation high-voltage power electronics, yet achieving normally-off operation remains challenging due to insufficient electrostatic depletion of the surface channel and severe gate-edge electric-field crowding. Here, we demonstrate a controlled transition from depletion-mode to enhancement-mode operation in all-ion-implanted planar-gate β-Ga2O3 current-aperture vertical electron transistors, a gate region-damage-minimized architecture that avoids gate-trench etching. A multi-step nitrogen-graded current-blocking layer (CBL) simultaneously engineers channel electrostatics and high-voltage electric-field distributions by introducing vertically distributed charge compensation. This graded profile enhances subsurface channel depletion, suppresses parallel conduction, and redistributes the peak electric field from the gate edge toward the buried CBL. As a result, the enhancement-mode device achieves a threshold voltage of 4.17 V, a breakdown voltage of 1310 V, a specific on-resistance of 19.1 mΩ cm2, and an ultralow threshold hysteresis of 52 mV. These results establish nitrogen-graded electrostatic compensation as an effective strategy for simultaneously realizing normally-off operation and enhanced voltage-blocking capability in vertical β-Ga2O3 transistors.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"84 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148894095","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Shape-optimized Model-based Reconstruction Algorithm for Radiacoustic Imaging. 基于形状优化模型的辐射声成像重建算法。

IF 3.8 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-06-22 Epub Date: 2026-06-23 DOI: 10.1063/5.0326437

Prabodh Kumar Pandey, Omprakash Gottam, Kristina Bjegovic, Gilberto Gonzalez, Yong Chen, Liangzhong Xiang

{"title":"Shape-optimized Model-based Reconstruction Algorithm for Radiacoustic Imaging.","authors":"Prabodh Kumar Pandey, Omprakash Gottam, Kristina Bjegovic, Gilberto Gonzalez, Yong Chen, Liangzhong Xiang","doi":"10.1063/5.0326437","DOIUrl":"10.1063/5.0326437","url":null,"abstract":"<p><p>We present a shape-optimized model-based (SOMB) reconstruction framework that addresses the limited-view problem in radiacoustic imaging arising from restricted detector placement, which creates severely ill-posed inverse problems that manifest as characteristic artifacts in reconstructed images. We first reconstruct the approximate dose-region boundary using a parametric level set-based shape optimization. Pointwise model-based dose reconstruction is then performed only within this shape-constrained region. By restricting reconstruction from the full imaging domain to only the pixels within the identified region, the number of unknowns is significantly reduced, transforming a severely ill-posed inverse problem into a significantly better-constrained one. We validate this methodology through computational studies and experiments using clinical X-ray and proton radiation sources under limited angular coverage data acquisition settings. Results demonstrate substantial artifact reduction and improved accuracy compared to standard model-based reconstructions, with 3-25% improvement in correlation coefficients across different imaging settings-more pronounced improvements occurring under stronger limited-view conditions. This shape-optimized approach provides a viable pathway for accurate radiation therapy monitoring under clinically realistic detector configurations.</p>","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"128 25","pages":""},"PeriodicalIF":3.8,"publicationDate":"2026-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC13464789/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148720554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Creation of depth-confined, shallow nitrogen-vacancy centers in diamond with tunable density 在密度可调的金刚石中产生深度受限的浅氮空位中心

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-05-20 DOI: 10.1063/5.0316283

Lillian B. Hughes Wyatt, Shreyas Parthasarathy, Isaac Kantor, Casey K. Kim, Lingjie Chen, Taylor A. Morrison, Jeffrey Ahlers, Kunal Mukherjee, Ania C. Bleszynski Jayich

引用次数: 0

Localized electrothermal annealing for rapid recovery of ambient degradation in indium oxide transistors via COMSOL simulations and experimental characterization 通过COMSOL模拟和实验表征，局部电热退火用于氧化铟晶体管环境降解的快速恢复

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-05-20 DOI: 10.1063/5.0324275

Dongsun Shin, Jaewook Yoo, Hongseung Lee, Sojin Jung, Seongbin Lim, Minah Park, Seohyeon Park, Donghyeon Lee, Soohyun Lim, Sieun Lee, Junhui Park, TaeWan Kim, Kiyoung Lee, Hagyoul Bae

引用次数: 0

Metasurface tape for efficient millimeter-wave power transfer via surface-wave propagation 通过表面波传播实现高效毫米波功率传输的超表面胶带

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-05-20 DOI: 10.1063/5.0333499

Phuc Toan Dang, Kota Suzuki, Yoshiki Ashikaga, Yasushi Tsuchiya, Sendy Phang, Hiroki Wakatsuchi

{"title":"Metasurface tape for efficient millimeter-wave power transfer via surface-wave propagation","authors":"Phuc Toan Dang, Kota Suzuki, Yoshiki Ashikaga, Yasushi Tsuchiya, Sendy Phang, Hiroki Wakatsuchi","doi":"10.1063/5.0333499","DOIUrl":"https://doi.org/10.1063/5.0333499","url":null,"abstract":"Millimeter-wave technologies are essential for future high-speed wireless communications. However, a fundamental challenge remains in the form of severe free-space path loss, where the power density decreases inversely with the square of the distance r (i.e., ∝r−2) as a spherical dependence. To overcome this limitation, we propose a flexible metasurface (MS) tape that is designed to guide electromagnetic energy as surface waves. Unlike conventional free-space propagation, this engineered MS confines the field to a subwavelength interface, thereby altering the power decay law to a circular dependence (i.e., ∝r−1). We numerically and experimentally, for the first time, demonstrate this concept using a periodic grounded patch array fabricated on a flexible substrate and operated at approximately 100 GHz. The measurement results show that the MS tape significantly increases the transmitted power, yielding an average rate of improvement of approximately 40 per meter in received power relative to the free-space baseline in our measurement geometry (e.g., a 29-dB increase at 2 m). This increase is realized over a broad bandwidth from 95 to 105 GHz (i.e., approximately 10%), accommodating wideband modulation schemes required for high-data-rate applications. The flexible, lightweight nature of the tape allows it to be easily installed on diverse surfaces. Our demonstration indicates that the MS tape is a promising platform for extending the effective range of millimeter-wave systems, thus offering a robust solution to the path-loss bottleneck in next-generation wireless networks.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"23 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148287826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Synergistic strengthening at the γ / γ ′ interface: A pinning-to-network transition driven by trace Co γ / γ′界面的协同强化：微量Co驱动的钉钉到网络的转变

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-05-20 DOI: 10.1063/5.0304054

Keyu Wang, Jiabao Zhang, Yinghao Chen, Huicong Dong, Dayong Wu, Wang Li, Haikun Ma, Zhihao Feng, Ru Su

{"title":"Synergistic strengthening at the γ / γ ′ interface: A pinning-to-network transition driven by trace Co","authors":"Keyu Wang, Jiabao Zhang, Yinghao Chen, Huicong Dong, Dayong Wu, Wang Li, Haikun Ma, Zhihao Feng, Ru Su","doi":"10.1063/5.0304054","DOIUrl":"https://doi.org/10.1063/5.0304054","url":null,"abstract":"Precisely tuning interfacial properties with trace elements is a key challenge in alloy design, particularly for Ni-based superalloys where the role of trace Co at the γ/γ′ interface is unclear. This study addresses this challenge using atomistic simulations, uncovering a non-monotonic strengthening effect optimized at 0.25 at. % Co. A distinct double yielding behavior is observed in all samples, but the optimal concentration uniquely enhances the second yield strength. The origin of this enhanced strength is a remarkably stable Cottrell atmosphere. This stability fundamentally alters the deformation pathway by catalyzing the formation of a dense dislocation network while simultaneously suppressing premature shearing of the γ′ phase. This efficient transition to a network-hardening regime allows the system to sustain higher stresses before ultimate yield and successfully avoids the dynamic strain aging instabilities inherent to other concentrations. These findings therefore deepen the understanding of the pinning-to-network strengthening transition and provide a mechanistic pathway for designing advanced alloys via the precise engineering of interfacial deformation.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"53 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148287567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0