Applied Physics Letters最新文献_第3页

Fast non-equilibrium carrier dynamics in polar InGaN/GaN structures with wide quantum wells 具有宽量子阱的极性InGaN/GaN结构中的快速非平衡载流子动力学

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-22 DOI: 10.1063/5.0259804

Jens W. Tomm, Konrad Sakowski, Artem Bercha, Grzegorz Muzioł, Conny Becht, Ulrich T. Schwarz, Witold Trzeciakowski

引用次数: 0

Sensitivity enhancement of an anomalous Hall effect magnetic sensor by means of second-order magnetic anisotropy 利用二阶磁各向异性增强反常霍尔效应磁传感器的灵敏度

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-22 DOI: 10.1063/5.0260358

H. Arai, H. Imamura

引用次数: 0

Observation of odd–even effect in 1-alcohols through pentapeptide-coated quartz crystal microbalance sensors with molecular docking study 利用五肽包覆石英晶体微平衡传感器观察1-醇的奇偶效应

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-22 DOI: 10.1063/5.0254577

Thuc Anh Ngo, Kosuke Minami, Tanju Yildirim, Kota Shiba, Genki Yoshikawa

{"title":"Observation of odd–even effect in 1-alcohols through pentapeptide-coated quartz crystal microbalance sensors with molecular docking study","authors":"Thuc Anh Ngo, Kosuke Minami, Tanju Yildirim, Kota Shiba, Genki Yoshikawa","doi":"10.1063/5.0254577","DOIUrl":"https://doi.org/10.1063/5.0254577","url":null,"abstract":"The discrimination between odd and even carbon chain molecules is crucial in detecting odd chain metabolites resulting from impaired biosynthetic processes. However, the discrimination of these metabolomes via gas sensors presents significant challenges due to the lack of connection between material–gas interaction and odd–even carbon chain molecules. In this study, a homologous series of 1-alcohols is systematically investigated, quantitatively comparing the measured signals obtained using pentapeptide-coated gas sensors and pentapeptide–gas interactions calculated via molecular docking simulations. The pentapeptide-coated gas sensor exhibits a clear odd–even effect in both absorption and desorption processes, demonstrating better discrimination between odd- and even-numbered carbon compounds. The results indicate that the odd–even effect during the absorption process is closely associated with the hydrophobic interaction between a pentapeptide and a gas molecule, while the interactions affecting the desorption phase may vary depending on the pentapeptide properties. The insights into the molecular interactions involved in the odd–even effect will facilitate the development of materials for detecting odd chain metabolites, which can enhance the accuracy of gas-sensing technologies toward health monitoring applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"2 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143862336","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Perspective on nonvolatile magnon-signal storage and in-memory computation for low-power consuming magnonics 低功耗磁振学的非易失性磁振子信号存储和内存计算展望

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-22 DOI: 10.1063/5.0260884

A. Nizet, M. Xu, S. S. Joglekar, A. Mucchietto, D. Grundler

引用次数: 0

Two-dimensional Rashba semiconductors and inversion-asymmetric topological insulators in monolayer Janus MAA'ZxZ'(4−x) family 二维Rashba半导体和倒置不对称拓扑绝缘体在单层Janus MAA' zxz '（4−x）族

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-22 DOI: 10.1063/5.0258804

Jinghui Wei, Qikun Tian, XinTing Xu, Guangzhao Qin, Xu Zuo, Zhenzhen Qin

{"title":"Two-dimensional Rashba semiconductors and inversion-asymmetric topological insulators in monolayer Janus MAA'ZxZ'(4−x) family","authors":"Jinghui Wei, Qikun Tian, XinTing Xu, Guangzhao Qin, Xu Zuo, Zhenzhen Qin","doi":"10.1063/5.0258804","DOIUrl":"https://doi.org/10.1063/5.0258804","url":null,"abstract":"The Rashba effect in Janus structures, accompanied by nontrivial topology, plays an important role in spintronics and even photovoltaic applications. Herein, through first-principles calculations, we systematically investigate the geometric stability and electronic structures of 135 kinds of Janus MAA'ZxZ'(4−x) family derived from two-dimensional MA2Z4 (M = Mg, Ga, Sr; A = Al, Ga; Z = S, Se, Te) monolayers and design numerous Rashba semiconductors and inversion-asymmetric topological insulators. Specifically, there are a total of 26 Rashba semiconductors with isolated spin-splitting bands contributed by Se/Te-pz orbitals at conduction band minimum, and the magnitude of the Rashba constant correlates strongly with both the intrinsic electric field and the strength of spin–orbit coupling (SOC). As the atomic number increases, the bandgap of Janus MAA'ZxZ'(4−x) continually decreases until it shrinks to a point where, when SOC is considered, band inversion occurs, leading to a reopening of the bandgap with nontrivial topological phases. In conjunction with band inversion, pz orbitals near the Fermi level can introduce double Rashba splitting featuring a distinctive hybrid spin texture, which can be further effectively adjusted through small biaxial strains and show a continuous evolution from topological to non-topological accompanied by different spin textures. This work provides significant insights into Rashba and topology physics and further presents indispensable inversion-asymmetry materials for the development of nonlinear optoelectronics.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"1 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143862792","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Stacking-, strain-engineering induced altermagnetism, multipiezo effect, and topological state in two-dimensional materials 二维材料的叠层、应变工程诱导的电磁学、多压电效应和拓扑态

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-22 DOI: 10.1063/5.0267525

Wei Xun, Xin Liu, Youdong Zhang, Yin-Zhong Wu, Ping Li

{"title":"Stacking-, strain-engineering induced altermagnetism, multipiezo effect, and topological state in two-dimensional materials","authors":"Wei Xun, Xin Liu, Youdong Zhang, Yin-Zhong Wu, Ping Li","doi":"10.1063/5.0267525","DOIUrl":"https://doi.org/10.1063/5.0267525","url":null,"abstract":"Altermagnetism, a recently identified form of unconventional antiferromagnetism (AFM), enables the removal of spin degeneracy in the absence of net magnetization that provides a platform for the low power consumption and ultra-fast device applications. However, a little attention has been paid to the relationship between stacking, strain, and altermagnet, the multipiezo effect, and the topological state. Here, we propose a mechanism to realize the altermagnet, the multipiezo effect, and the topological state in two-dimensional (2D) materials by the stacking and strain engineering. Based on the analysis of symmetry, we find that the spin splitting feature related to the Ut, PTt, MzUt, or MzPTt symmetries in altermagnet multilayers. In addition, we find that the stacking engineering can effectively realize the transform from antiferromagnetism to altermagnetism and semiconductor to metal for the Janus bilayer V2SeTeO. More interestingly, the strain not only induces an intriguing multipiezo effect, encompassing the piezovalley, piezomagnetism, and piezoelectric, but also achieves the abundant topological phase. Our findings offer a generalized direction for manipulating the spin splitting, valley polarization, and topological states, promoting practical application of valleytronic and spintronic devices based on two-dimensional altermagnets.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"108 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143862799","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Atomic-scale insights into microstructural complexity of van der Waals ferroelectric CuInP2S6 范德华铁电CuInP2S6微观结构复杂性的原子尺度洞察

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-22 DOI: 10.1063/5.0259324

Jianwei Zhang, Lei Yang, Yunzhe Zheng, Ke Qu, Qingfeng Zhu, Zhenzhong Yang, Rong Huang, Ni Zhong, Chungang Duan

{"title":"Atomic-scale insights into microstructural complexity of van der Waals ferroelectric CuInP2S6","authors":"Jianwei Zhang, Lei Yang, Yunzhe Zheng, Ke Qu, Qingfeng Zhu, Zhenzhong Yang, Rong Huang, Ni Zhong, Chungang Duan","doi":"10.1063/5.0259324","DOIUrl":"https://doi.org/10.1063/5.0259324","url":null,"abstract":"The rapid advancement of technology has positioned devices based on two-dimensional materials as a key solution to overcoming the limitations of traditional semiconductor materials. Among these, the ferroelectric compound CuInP2S6 (CIPS) has attracted significant attention for its multiple ferroelectric polarization states. However, its structural complexity, particularly its susceptibility to copper deficiency, presents notable challenges for further research. This study investigates copper-deficient CIPS (Cu: CIPS) to explore the structure–property relationship between ferroelectricity and structural composition at macroscopic and microscopic levels. Using spherical aberration-corrected scanning transmission electron microscopy, copper deficiency is shown to induce phase separation in CIPS, resulting in the coexistence of CIPS (Cc), CIPS (Cc′) (where the two layers experience a sliding displacement of 1/6b along the b-axis) and an In4/3P2S6 structure containing small amounts of Cu (Cu: IPS) structure. Moreover, the intermediate phase exhibits a lack of ferroelectric switching response in piezoelectric force microscopy measurements. This work elucidates the microstructural evolution of Cu: CIPS, identifies the mechanism underlying the failure of ferroelectric switching in CIPS, and provides valuable insights for advancing CIPS-based ferroelectric memory devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"273 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143862335","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Magnetic phase transition, enhanced magnetic anisotropy, and anomalous Hall effect in bilayer FeCl2 with different stacking orders 不同堆叠顺序双层FeCl2的磁相变、磁各向异性增强和反常霍尔效应

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-22 DOI: 10.1063/5.0265302

Yuqi Liu, Long Zhang, Xuming Wu, Guoying Gao

{"title":"Magnetic phase transition, enhanced magnetic anisotropy, and anomalous Hall effect in bilayer FeCl2 with different stacking orders","authors":"Yuqi Liu, Long Zhang, Xuming Wu, Guoying Gao","doi":"10.1063/5.0265302","DOIUrl":"https://doi.org/10.1063/5.0265302","url":null,"abstract":"The controllability of magnetic order and magnetic anisotropy in van der Waals magnets is crucial for 2D spintronic applications. Based on the recent experimental few-layer FeCl2 [Zhou et al., ACS Nano 18, 10912 (2024) and Jiang et al., ACS Nano 17, 1363 (2023)], in this Letter, we use first-principles to systemically explore the effects of electric field and strain on magnetic order, magnetic anisotropy, and electronic structure of bilayer FeCl2 with different stacking orders. We demonstrate that for both AA- and AB-stacked bilayer FeCl2, the perpendicular electric field induces the change in orbital overlap between nearest-neighbor interlayer Fe atoms, resulting in the interesting transition from interlayer antiferromagnetic to ferromagnetic coupling, and the critical electric field is only 0.10 V/Å for the AB-stacking order. Simultaneously, the electric field can induce the transition of magnetic easy axis from out-of-plane to in-plane to out-of-plane due to the change in Fe-3d intraorbital hybridizations. In contrast, the in-plane strain does not trigger the phase transitions of magnetic order and magnetic easy axis, but the −5% compressive strain significantly increases the out-of-plane magnetic anisotropic energy by 69% and 124% for AA- and AB-stacking orders, respectively. Additionally, the anomalous Hall effect is predicted in AB-stacked bilayer FeCl2 without and with electric field. The present work indicates the promising applications for bilayer FeCl2 in low-energy-consumption spintronic devices such as electrical control magnetic tunnel junctions and magnetic storage devices, and will stimulate broad study on electric field and strain tuned van der Waals magnets.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"33 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143862332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Tunable acoustic delay lines based on thermally controlled single-phase unidirectional transducers 基于热控单相单向换能器的可调谐声延迟线

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-22 DOI: 10.1063/5.0255226

Yang Li, Jiawei Li, Tao Wu

引用次数: 0

Switchable polarization in 2D antiferromagnetic CuFe2X4 (X=S, Se) 二维反铁磁CuFe2X4 （X=S, Se）的可切换极化

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-22 DOI: 10.1063/5.0264016

Yuan Feng, Wei Fu, Qiang Lu, Yong Guo, Sha-Sha Ke, Hai-Feng Lü

{"title":"Switchable polarization in 2D antiferromagnetic CuFe2X4 (X=S, Se)","authors":"Yuan Feng, Wei Fu, Qiang Lu, Yong Guo, Sha-Sha Ke, Hai-Feng Lü","doi":"10.1063/5.0264016","DOIUrl":"https://doi.org/10.1063/5.0264016","url":null,"abstract":"The synthesis of two-dimensional AgCr2S4 has generated significant interest in AM2X4 type non-van der Waals materials. AM2X4 monolayer breaks the central inversion symmetry of the system by intercalation, resulting in intrinsic multiferroicity. Based on recent experimental achievements of the FeS2 monolayer, we predict two intrinsic multiferroic materials: CuFe2S4 and CuFe2Se4. Utilizing first-principles calculations, we demonstrate their ferroelectric and ferromagnetic properties. Our findings indicate that strain can switch the direction of polarization due to the different displacements of the ionic center and the center of electron density. CuFe2X4 (X = S, Se) monolayers are metal with antiferromagnetic coupling in the perpendicular direction under ambient conditions. The spontaneous polarizations for CuFe2S4 and CuFe2Se4 monolayers are 1.73 and 1.42 pC/m, respectively. Applying a compressive strain exceeding 3% can reverse the polarization direction, while a tensile strain of 4% enhances the polarization of CuFe2S4 to 2.65 pC/m. In addition, the strain effectively influences the magnetic ground state, the direction of the easy axis, and the contribution of different orbital hybridization. These findings help us understand the ferromagnetic and ferroelectric mechanisms in the CuFe2X4 monolayers and expand the family of 2D multiferroic materials.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"12 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143862327","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0