Applied Physics Letters最新文献_第3页

Enhanced photoresponse and polarization-sensitive photodetector coupling InGaN/GaN MQW heterojunction with Ag nanoparticles

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-03-27 DOI: 10.1063/5.0244359

Liang Chen, Tingjun Lin, Jixing Chai, Ququ Hao, Lei Lei, Jinrong Chen, Wenliang Wang, Guoqiang Li

{"title":"Enhanced photoresponse and polarization-sensitive photodetector coupling InGaN/GaN MQW heterojunction with Ag nanoparticles","authors":"Liang Chen, Tingjun Lin, Jixing Chai, Ququ Hao, Lei Lei, Jinrong Chen, Wenliang Wang, Guoqiang Li","doi":"10.1063/5.0244359","DOIUrl":"https://doi.org/10.1063/5.0244359","url":null,"abstract":"InGaN-based pin-type visible light photodetectors (PDs), exhibiting enormous advantages of fast photoresponse speed and low noise, have drawn tremendous interest in visible light communication (VLC) applications. However, the insufficient light absorption capacity and low photoelectric conversion efficiency of InGaN-based pin heterojunction hinder the realization of high-sensitivity PDs for achieving this aim. Herein, plasmonic PDs based on InGaN/GaN multi-quantum wells (MQW) heterojunction with Ag nanoparticles (NPs) have been experimentally implemented, showing balanced abilities of enhanced photoresponse and polarization sensitivity in the blue light region. The PD's optimized responsivity, detectivity, and anisotropy ratio reach 0.176 A/W, 1.93 × 1010 Jones, and 1.395, respectively, under 405 nm illumination. The surface plasmon resonance-induced local field of Ag NPs enhances the electric field density and the light absorption density in the heterojunction region of InGaN/GaN MQWs, improving the photoresponse of PDs. This work proposes a valuable strategy for designing high-performance visible light PDs, providing an attractive stage for high-efficiency visible light communication applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"31 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143723187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhanced p-type GaN Ohmic contacts through strategic metal schemes and annealing

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-03-27 DOI: 10.1063/5.0249410

Donghan Kim, Soo-Young Moon, Sung-Bum Bae, Hyeon-Tak Kwak, Hongsik Park, Hyung-Seok Lee

{"title":"Enhanced p-type GaN Ohmic contacts through strategic metal schemes and annealing","authors":"Donghan Kim, Soo-Young Moon, Sung-Bum Bae, Hyeon-Tak Kwak, Hongsik Park, Hyung-Seok Lee","doi":"10.1063/5.0249410","DOIUrl":"https://doi.org/10.1063/5.0249410","url":null,"abstract":"To enhance the efficiency and performance of p-type GaN-based power devices (diode, MOSFET) and p-channel transistors (p-FET), forming an Ohmic contact with low specific contact resistance (ρc) at p-GaN can be an effective way. However, the specific contact resistance values of p-GaN remain limited to the range of mid-10−2Ω cm2 due to the low activation ratio of Mg dopants and high work function. Here, we propose an Ohmic contact method using a Pd-based metal stack to achieve lower specific contact resistance compared to conventional p-GaN contact metals such as Ni/Au or Pt/Au. A low specific contact resistance of 1.08 × 10−5Ω cm2 was demonstrated for p-GaN by annealing a Pd-based tri-layer metal contact in an oxygen-rich ambient with an optimized Pd thickness. The mechanism driving this low specific contact resistance was investigated using secondary ion mass spectroscopy, transmission electron microscopy, x-ray diffraction, and x-ray photoelectron spectroscopy, which indicated the mutual diffusion of Ni, Pd, and Ga atoms within the metal alloy. A NiO layer was formed on the top of the metal alloy, and Pd-Ga compounds were formed at the metal/p-GaN interface through mutual diffusion of atoms. This process increased the number of Ga vacancies in p-GaN, playing a crucial role in reducing its contact resistance.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"22 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143723188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhanced rectification behavior and electrical properties of ZnO:Cu/ZnO heterojunctions via laser-induced doping and annealing treatments

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-03-27 DOI: 10.1063/5.0249018

Yantong Liang, Jin-Cheng Zheng, Huan Xing, Ying Du, Tielong Deng, Huahan Zhan, Junyong Kang, Hui-Qiong Wang

{"title":"Enhanced rectification behavior and electrical properties of ZnO:Cu/ZnO heterojunctions via laser-induced doping and annealing treatments","authors":"Yantong Liang, Jin-Cheng Zheng, Huan Xing, Ying Du, Tielong Deng, Huahan Zhan, Junyong Kang, Hui-Qiong Wang","doi":"10.1063/5.0249018","DOIUrl":"https://doi.org/10.1063/5.0249018","url":null,"abstract":"Cu-doped ZnO:Cu/ZnO heterojunctions were fabricated via a three-step laser-induced doping technique. This study systematically investigated the electrical properties, microstructure, elemental valence states, and energy-band alignment of these heterojunctions through multiple analytical techniques. Current–voltage measurements revealed an asymmetric, nonlinear behavior due to the depletion region at the ZnO:Cu/ZnO interface, with annealing further enhancing electrical performance by yielding a lower turn-on voltage of 0.3 V, an increased rectification ratio of 81.1, and a reduced ideality factor of 6.69. Band structure analysis showed that both the conduction band offset and valence band offset at the ZnO:Cu/ZnO interface increase, indicating a higher barrier height, resulting in more pronounced rectification behavior. X-ray diffraction showed that the laser-treated samples have polycrystalline structures, and annealing improved the crystallinity, thereby enhancing the conductivity. Furthermore, secondary ion mass spectroscopy confirmed the deep implantation of high concentrations of Cu ions into ZnO. Depth-profiling x-ray photoelectron spectra revealed the co-presence of Cu+ and Cu2+, both of which contribute to the p-type conductivity. These findings offer valuable insights for optimizing ZnO heterojunctions in applications such as light-emitting diodes and laser diodes with a high level of efficiency and low turn-on voltage.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"72 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143723191","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Negative differential resistance in a family of Fe3X4 (X = S, Se, Te) antiferromagnetic semiconducting nanowires

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-03-27 DOI: 10.1063/5.0256111

Jinchao Kang, Qinxi Liu, Xue Jiang, Jijun Zhao

{"title":"Negative differential resistance in a family of Fe3X4 (X = S, Se, Te) antiferromagnetic semiconducting nanowires","authors":"Jinchao Kang, Qinxi Liu, Xue Jiang, Jijun Zhao","doi":"10.1063/5.0256111","DOIUrl":"https://doi.org/10.1063/5.0256111","url":null,"abstract":"The experimentally observed 2D magnets have unlocked the possibility of realizing a stable long-range order in the low-dimensional limit, which also gives a boost to the family of 1D magnets. Recently, a family of Fe-based nanowires has been observed in high-throughput transition metal chalcogenides synthesized by chemical vapor deposition [Zhou et al., Nat. Mater. 22, 450–458 (2023)]. In this work, the atomic configuration, chemical composition, and magnetic properties of Fe3X4 (X = S, Se, Te) nanowires were confirmed by first-principles calculations and Monte Carlo simulations. Due to their intrinsic anisotropic character and strong d-p hybridization, Fe3X4 nanowires exhibit antiferromagnetic semiconducting behavior with good stability, a tunable bandgap of 0.277–0.771 eV, a large vertical magnetic anisotropy energy of 2.39 meV/Fe, and a high Néel temperature of 680–840 K. Moreover, the calculation of the spin transport properties has shown that these Fe3X4 nanowires possess the negative differential resistance behavior with the peak-to-valley current ratio from 1.84 to 6.85. Our results not only expand the database of magnetic nanowires but also provide a low-dimensional platform for multifunctional spin devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"125 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143723186","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhancing carrier dynamics via phase manipulation of dual-phase all-inorganic perovskites for high-performance photodetectors

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-03-27 DOI: 10.1063/5.0258320

Gaohui Ge, Kai Shen, Fan Cui, Jian Guo, Qiushi Wu, Hao Xu, Shu Min Wang

{"title":"Enhancing carrier dynamics via phase manipulation of dual-phase all-inorganic perovskites for high-performance photodetectors","authors":"Gaohui Ge, Kai Shen, Fan Cui, Jian Guo, Qiushi Wu, Hao Xu, Shu Min Wang","doi":"10.1063/5.0258320","DOIUrl":"https://doi.org/10.1063/5.0258320","url":null,"abstract":"Cesium lead bromide perovskites have demonstrated enormous potential in detecting applications, benefitting from their excellent optoelectronic properties and environmental stability. However, their intrinsic properties of photoluminescence intensity and carrier lifetime, key to photodetector performance, are still limited with conventional approaches (e.g., material purification and defect passivation). Here, we propose an efficient ultrasound-assisted growth method to manipulate the crystal phase of all-inorganic perovskites. Morphological, structural, and elemental characteristics of perovskites are comprehensively investigated, confirming the formation of CsPb2Br5–CsPbBr3 dual-phase (DP) perovskites. The fabricated DP perovskites exhibit enhanced carrier dynamics compared to CsPbBr3 quantum dots (QDs), including over a tenfold increase in photoluminescence intensity and an extended carrier lifetime of 656 ns. Such impressive improvements originate from the repeated radiative recombination introduced by the hierarchical phase of DP perovskites. As a result, the DP perovskite-based photodetector also demonstrates improved photoresponse, including a larger on/off ratio exceeding 103 and a higher detectivity of 1.48 × 1010 Jones, especially in the absence of conventional transporting layers. These results offer strong competitiveness for state-of-the-art perovskite photodetectors and deliver important implications for the widespread use of DP perovskites in assembling high-performance optoelectronic devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"21 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143723190","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

First-principles and Monte Carlo simulations of high-entropy MXenes

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-03-27 DOI: 10.1063/5.0258487

Noah Oyeniran, Oyshee Chowdhury, Chongze Hu

引用次数: 0

Ultra-long-range Bessel beams via leaky waves with mitigated open stopband

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-03-26 DOI: 10.1063/5.0253371

E. Negri, F. Giusti, W. Fuscaldo, P. Burghignoli, E. Martini, A. Galli

{"title":"Ultra-long-range Bessel beams via leaky waves with mitigated open stopband","authors":"E. Negri, F. Giusti, W. Fuscaldo, P. Burghignoli, E. Martini, A. Galli","doi":"10.1063/5.0253371","DOIUrl":"https://doi.org/10.1063/5.0253371","url":null,"abstract":"Open stopband (OSB) mitigation techniques are commonly used to improve the far-field radiating properties of leaky-wave antennas based on periodic structures. Recently, leaky waves have been proposed to focus energy in the near field through Bessel beams. However, the focusing character of Bessel beams is notably limited to a maximum distance known as the nondiffractive range. In this work, an OSB mitigation technique is originally exploited to significantly extend the nondiffractive range of a Bessel beam generated by a leaky-wave launcher in the microwave/millimeter-wave range. A comprehensive analysis of this device is presented, comparing the performance of the proposed launcher with the typical structure of a leaky-wave Bessel-beam launcher where the OSB is not suppressed. Theoretical results, corroborated by full-wave simulations, demonstrate that the proposed device achieves an impressive nondiffractive range of about 25 m. The latter, at 30 GHz, approximately corresponds to 2500 wavelengths (in vacuum) and to 50 times the aperture diameter which is about 50 cm. These results look particularly attractive for, e.g., near-field communications and wireless power transfer applications, where focusing energy in narrow regions and over large distances is a key factor.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"50 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143703378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Strong coupling between cavity and flopping-mode qubit beyond direct gate connection in a Si/SiGe triple quantum dot

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-03-26 DOI: 10.1063/5.0248678

Shun-Li Jiang, Tian-Yi Jiang, Tian-Yue Hao, Yong-Qiang Xu, Rui Wu, Bao-Chuan Wang, Hai-Ou Li, Gang Cao, Guo-Ping Guo

引用次数: 0

Single-shot Fourier ptychography using polarization-encoded illumination

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-03-26 DOI: 10.1063/5.0248101

Hansol Yoon, Hyesuk Chae, Kyung Chul Lee, Kyungwon Lee, Seung Ah Lee

引用次数: 0

Decoding the effect of defect and domain on piezoelectric properties of K0.5Na0.5NbO3-based single crystals

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-03-26 DOI: 10.1063/5.0249641

Chenggong Xiang, Zhiyong Liu, Pu Mao, Kun Guo, Bing Xie, Zhiguo Wang, Longlong Shu

{"title":"Decoding the effect of defect and domain on piezoelectric properties of K0.5Na0.5NbO3-based single crystals","authors":"Chenggong Xiang, Zhiyong Liu, Pu Mao, Kun Guo, Bing Xie, Zhiguo Wang, Longlong Shu","doi":"10.1063/5.0249641","DOIUrl":"https://doi.org/10.1063/5.0249641","url":null,"abstract":"The ultra-high piezoelectric activity of K0.5Na0.5NbO3 (KNN)-based single crystals with excellent electromechanical coupling characteristics has attracted great interest. However, the growth of KNN-based single crystals is restricted by their high melting point and harsh equipment conditions. In this work, a large-sized single crystal of (K0.5Na0.5)0.994Bi0.006Nb0.998Cu0.004O3 (KNNBC) was grown using an inexpensive and simple seed-free solid state crystal growth method. The growth mechanism, domain structures, defects, piezoelectric properties, as well as the conduction mechanisms of the KNNBC single crystal were systematically investigated. A significant piezoelectric coefficient (d33) as high as 392 pC/N is obtained in the KNNBC single crystal, which is three times higher than that of ceramics with the same composition, and the single crystal also maintains a high Curie temperature (Tc ∼ 399 °C). The superior piezoelectric properties are believed to stem from the ordered arrangement of large-sized striped domains (∼300 nm) and the sensitivity to polarization rotation due to the flattening of the Landau energy density. Additionally, the spontaneous polarization combined with complex defect dipoles consisting of Cu2+ ions and O2− vacancies effectively modulates both the quality factor (Qm) and the piezoelectric coefficient (d33) of the single crystals. This work broadens the growth strategy of high-performance KNN-based single crystals and highlights the great benefits of the synergistic modulation of defects and domains on the piezoelectric properties of single crystals.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"35 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143703380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0