Applied Physics Letters最新文献_第4页

Double-pulsed-induced medium-range order in Sn-doped Ga2O3 thin films: A strategy for enhanced record-breaking electrical properties

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-14 DOI: 10.1063/5.0257824

Yao Wang, Long Wang, Yanbo Dong, Qian Feng, Yuhong Liu, Yachao Zhang, Jincheng Zhang, Yue Hao

{"title":"Double-pulsed-induced medium-range order in Sn-doped Ga2O3 thin films: A strategy for enhanced record-breaking electrical properties","authors":"Yao Wang, Long Wang, Yanbo Dong, Qian Feng, Yuhong Liu, Yachao Zhang, Jincheng Zhang, Yue Hao","doi":"10.1063/5.0257824","DOIUrl":"https://doi.org/10.1063/5.0257824","url":null,"abstract":"This study explores Sn-doped Ga2O3 thin films synthesized via the double-pulse metalorganic chemical vapor deposition (MOCVD) method, highlighting its unique advantages in improving film microstructure and electrical properties. The results show that the double-pulse Sn-doped technique, through intermittent atomic supply, promotes medium-range ordering of Sn atoms within the Ga2O3 lattice, reducing lattice defects and enhancing crystallinity. Secondary ion mass spectrometry further reveals a doping activation rate of 95%. Notably, the films exhibit exceptional electrical performance, achieving a Hall mobility of 175.61 cm2/V·s at a carrier concentration of 2.17 × 1018 cm−3. This value represents a record-high mobility for β-Ga2O3 at this carrier concentration, significantly surpassing the performance of films prepared via conventional continuous deposition methods. This study offers valuable insights into the mechanisms of double-pulse MOCVD and its potential for Ga2O3-based high-performance electronic devices, providing an effective pathway for optimizing next-generation electronic materials.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"20 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143832094","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Record performance in intrinsic, impurity-free lateral diamond photoconductive semiconductor switches

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-14 DOI: 10.1063/5.0266565

Zhuoran Han, Jaekwon Lee, Anik Mazumder, Hubert Elly, Stephen Messing, Andrey Mironov, Can Bayram

引用次数: 0

Characteristics of transport properties in ultra-wide bandgap Al0.65Ga0.35N channel HEMTs with low contact resistance and high breakdown voltage (>2.5 kV)

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-14 DOI: 10.1063/5.0256300

Swarnav Mukhopadhyay, Khush Gohel, Surjava Sanyal, Mayand Dangi, Rajnin I. Roya, Ruixin Bai, Jiahao Chen, Qinchen Lin, Guangying Wang, Chirag Gupta, Shubhra S. Pasayat

{"title":"Characteristics of transport properties in ultra-wide bandgap Al0.65Ga0.35N channel HEMTs with low contact resistance and high breakdown voltage (>2.5 kV)","authors":"Swarnav Mukhopadhyay, Khush Gohel, Surjava Sanyal, Mayand Dangi, Rajnin I. Roya, Ruixin Bai, Jiahao Chen, Qinchen Lin, Guangying Wang, Chirag Gupta, Shubhra S. Pasayat","doi":"10.1063/5.0256300","DOIUrl":"https://doi.org/10.1063/5.0256300","url":null,"abstract":"Ultra-wide bandgap (UWBG) Al0.65Ga0.35N channel high electron mobility transistors (HEMTs) were deposited using a close-coupled showerhead metal-organic chemical vapor deposition reactor on AlN-on-sapphire templates to investigate the effect of transport properties of the two-dimensional electron gas (2DEG) on the epitaxial structure design. The impact of various scattering phenomena on AlGaN channel HEMTs was analyzed with respect to the channel, buffer, and AlN interlayer design, revealing that the alloy disorder and ionized impurity scattering mechanisms were predominant, limiting the mobility of 2DEG up to 180 cm2/Vs for a sheet charge density of 1.1 × 1013 cm−2. A surface roughness of &lt;1 nm (2 μm × 2 μm atomic force microscopy scan) was achieved for the epitaxial structures demonstrating superior crystalline quality. The fabricated HEMT device showed state-of-the-art contact resistivity (ρc = 8.35 × 10−6 Ω · cm2), low leakage current (&lt;10−6 A/mm), high ION/IOFF ratio (&gt;105), a breakdown voltage of 2.55 kV, and a Baliga's figure of merit of 260 MW/cm2. This study demonstrates the optimization of the structural design of UWBG AlGaN channel HEMTs and its effect on transport properties to obtain state-of-the-art device performance.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"108 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143832093","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Superconducting microwave oscillators as detectors for ESR spectroscopy

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-14 DOI: 10.1063/5.0260098

R. Russo, A. Chatel, N. Brusadin, R. Yu, R. Farsi, H. Furci, J. Brugger, G. Boero

{"title":"Superconducting microwave oscillators as detectors for ESR spectroscopy","authors":"R. Russo, A. Chatel, N. Brusadin, R. Yu, R. Farsi, H. Furci, J. Brugger, G. Boero","doi":"10.1063/5.0260098","DOIUrl":"https://doi.org/10.1063/5.0260098","url":null,"abstract":"Microwave superconducting resonators are extensively studied in fields such as quantum computing and electron spin resonance (ESR) spectroscopy. However, the integration of superconducting resonators with feedback mechanisms to create ultra-low noise oscillators is a relatively unexplored area, and the application of such oscillators in ESR spectroscopy has not yet been demonstrated. In this work, we report the design, fabrication, and application of microwave oscillators based on superconducting resonators for ESR spectroscopy, illustrating an alternative way for the improvement of the performance of oscillator based ESR sensors. Specifically, ESR spectra are obtained by measuring the oscillator's frequency shift induced by the ESR effect as a function of the applied static magnetic field. The oscillators are composed of a single heterojunction bipolar transistor or high electron mobility transistor coupled with NbTi or YBa2Cu3O7 (YBCO) superconducting resonators. The fabricated oscillators operate at frequencies of 0.6 and 1.7 GHz and temperatures up to 80 K (for YBCO resonators) and 8 K (for NbTi resonators). The lowest measured frequency noise is about 9 mHz/Hz1/2 (−139 dBc/Hz), the best spin sensitivity is about 1×1010 spins/Hz1/2, and the best concentration sensitivity is about 3×1018 spins/Hz1/2m3. The approach proposed in this work should allow for significantly better spin and concentration sensitivities compared to those achievable with normal conductors, up to operating frequencies, magnetic fields, and temperatures, where superconductors exhibit substantially lower effective microwave resistance than normal conductors.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"120 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143827595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of ALD temperature on the polarization switching dynamics of BEOL-compatible Hf0.5Zr0.5O2 ferroelectric film ALD 温度对 BEOL 兼容型 Hf0.5Zr0.5O2 铁电薄膜极化切换动力学的影响

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-14 DOI: 10.1063/5.0253330

Xiaopeng Li, Lu Tai, Xiaoyu Dou, Pengpeng Sang, Xuepeng Zhan, Jixuan Wu, Wei Wei, Jiezhi Chen

引用次数: 0

Impact of photo-irradiation on the optical and spin properties of chiral CdS quantum dot films

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-14 DOI: 10.1063/5.0268396

Pan Liang, Yang Wang, Lin Cheng, Rongrong Hu, Yumeng Men, Jinlei Li, Tianqing Jia, Zhenrong Sun, Donghai Feng

{"title":"Impact of photo-irradiation on the optical and spin properties of chiral CdS quantum dot films","authors":"Pan Liang, Yang Wang, Lin Cheng, Rongrong Hu, Yumeng Men, Jinlei Li, Tianqing Jia, Zhenrong Sun, Donghai Feng","doi":"10.1063/5.0268396","DOIUrl":"https://doi.org/10.1063/5.0268396","url":null,"abstract":"Chiral quantum dots (QDs) are expected to play a significant role in chiral molecular recognition, spin-selective filtering for charge transport, and various other fields. Photo-irradiation can enhance the photoluminescence (PL) of chiral CdSe QD films, which serves as a convenient method to modulate the optical properties. However, the effects of photo-irradiation on the absorption and spin properties of chiral QDs remain unclear. In this study, we investigate the influence of photo-irradiation on the PL, absorption, and spin properties of chiral L/D-cysteine-capped CdS QD films. Under the irradiation of the 458 nm continuous wave laser, the PL intensity of chiral CdS QD films can be significantly enhanced by over 50 times and the absorption peak exhibits a blue shift of approximately 3 nm. The transient transmission dynamics before and after irradiation indicate that the bleach recovery lifetime became longer after irradiation, which can be attributed to the increase in radiative recombination. Furthermore, the strength of the electron spin is diminished due to a decrease in the number of charge-separated electrons. The significant enhancement in PL intensity, coupled with the increased radiative recombination and the reduction in spin signals, strongly suggests that surface defects are effectively passivated. The influence of photo-irradiation on the optical properties of chiral QDs provides valuable insights for the design of chiral nanomaterials and their applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"21 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143832091","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Thermal magnetoresistance from magnon scattering from a domain wall in an antiferromagnetic insulator

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-14 DOI: 10.1063/5.0254817

Ehsan Faridi, Se Kwon Kim, Giovanni Vignale

引用次数: 0

Kerr electro-optic properties of rare-earth doped Pb(Mg1/3Nb2/3)O3-PbTiO3 crystals

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-14 DOI: 10.1063/5.0258040

Hongjiang Wu, Ruibin Xiong, Rongbing Su, Zujian Wang, Bin Su, Lingfei Lv, Chao He

{"title":"Kerr electro-optic properties of rare-earth doped Pb(Mg1/3Nb2/3)O3-PbTiO3 crystals","authors":"Hongjiang Wu, Ruibin Xiong, Rongbing Su, Zujian Wang, Bin Su, Lingfei Lv, Chao He","doi":"10.1063/5.0258040","DOIUrl":"https://doi.org/10.1063/5.0258040","url":null,"abstract":"Pb(Mg1∕3Nb2∕3)O3-PbTiO3 (PMN-PT) crystals exhibit significant potential for applications in the electro-optical (EO) field, owing to their low half-wave voltage and high electro-optic coefficients, ease of miniaturization, and integration. However, the ferroelectric phase PMN-PT crystals exhibit a low extinction ratio due to light scattering and reflection by domain walls. In this study, high-transmittance paraelectric phase PMN-PT crystals were synthesized through compositional optimization and rare-earth ion doping. The optical and Kerr electro-optic properties of the crystals were systematically analyzed, considering the PT composition and doping with La3+ and Sm3+ ions. The La-PMN-8PT crystals demonstrated a transmission rate of 75%, a quadratic electro-optic coefficient of 4.28 × 10−16 m2/V2, an extinction ratio of 29 dB, and a half-wave voltage of 270 V. Additionally, the electro-optical performance of the crystals was evaluated over a range of temperatures, revealing excellent temperature stability in the La-doped crystals. These results highlight the promising potential of La-doped PMN-PT crystals for advanced electro-optical applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"39 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143827599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Excellent magnetostrictive properties via tuning the crystal structure and grain size

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-14 DOI: 10.1063/5.0257974

Qizhong Zhao, Kun Wang, Jiale Guo, Fanghua Tian, Xiaojing Zhang, Kaiyan Cao, Yin Zhang, Chao Zhou, Sen Yang, Xiaoping Song

引用次数: 0

Crystallization regulation and defect suppression of CsPbI2Br perovskite using a dual-functional additive

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-04-14 DOI: 10.1063/5.0260577

Zhi Zhu, Jing Xu, Yuhan Zhou, Shisheng Ge, Tao Yu, Jie Yang, Chunxiong Bao, Zhigang Zou

{"title":"Crystallization regulation and defect suppression of CsPbI2Br perovskite using a dual-functional additive","authors":"Zhi Zhu, Jing Xu, Yuhan Zhou, Shisheng Ge, Tao Yu, Jie Yang, Chunxiong Bao, Zhigang Zou","doi":"10.1063/5.0260577","DOIUrl":"https://doi.org/10.1063/5.0260577","url":null,"abstract":"Inorganic CsPbI2Br perovskite solar cells have attracted widespread attention due to their outstanding performance and photo-thermal stability. However, the rapid crystallization of the solution-processed CsPbI2Br film often results in poor crystallinity and a high density of defects, which seriously restrict the improvement of the device performance. Here, we introduce a dual-functional additive, 4-amino-5-aminomethyl-2-methylpyrimidine (AMP), to regulate the crystallization and reduce the defect density of the CsPbI2Br film. The introduction of AMP notably improves the crystallinity and morphology of the CsPbI2Br film and promotes a preferred crystal orientation. The C=N and amino groups in AMP interact with Pb2+ and Br- in the perovskite, respectively, effectively passivating the defects and improving the carrier lifetime. As a result, the power conversion efficiency of the optimized carbon-based hole-transport layer-free device reaches 13.30%, which exceeds the 10.66% of the control device. The environmental and light stability of the device is also significantly improved. This work provides valuable insights into the development of high-performance all-inorganic perovskite solar cells via additive strategies.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"6 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143827437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0