Applied Physics Letters最新文献_第4页

Enabling efficient photocatalytic H2 evolution via defect-robust interfacial polarization in type-I g-C3N4/CdSe heterostructure 在i型g-C3N4/CdSe异质结构中，通过缺陷-鲁棒界面极化实现高效的光催化析氢

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-12 DOI: 10.1063/5.0351100

Yuxi Xie,Jiaming Fan,Zhaoyu Ma,Hengqi Zhao,Chengyu Tao,Shitong Wang,Junying Zhang

{"title":"Enabling efficient photocatalytic H2 evolution via defect-robust interfacial polarization in type-I g-C3N4/CdSe heterostructure","authors":"Yuxi Xie,Jiaming Fan,Zhaoyu Ma,Hengqi Zhao,Chengyu Tao,Shitong Wang,Junying Zhang","doi":"10.1063/5.0351100","DOIUrl":"https://doi.org/10.1063/5.0351100","url":null,"abstract":"Type-I heterostructures often suffer from same-component electron–hole accumulation and recombination during photocatalytic H2 evolution. Here, by combining first-principles calculations with experimental validation, we show that a type-I g-C3N4/CdSe heterostructure can achieve efficient photocatalytic H2 evolution through defect-robust interfacial polarization. Density functional theory calculations suggest a thermodynamically favorable interfacial contact configuration and show that the net electron-transfer direction remains from CdSe to g-C3N4 in both pristine and representative defect-containing interfaces. Guided by this prediction, we employed an in situ growth strategy to construct a compact g-C3N4/CdSe interface and obtained the optimized sample i-CN/CS-29, which exhibits an H2-evolution rate of 27.5 mmol g−1 h−1 with 3 wt. % Pt, 2.4 times that of Pt/CdSe. These results suggest that coupling interfacial thermodynamics with defect-robust polarization provides a physically grounded route to mitigating recombination losses in type-I photocatalytic heterostructures.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"53 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149210354","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Study on the mechanism of performance degradation in β-Ga2O3 heterojunction diodes under 10 MeV proton irradiation 10 MeV质子辐照下β-Ga2O3异质结二极管性能退化机理研究

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-12 DOI: 10.1063/5.0354396

Yahui Feng,Rui Jia,Hongxia Guo,Zhiwen Gao,Xiaoyu Pan,Jinxin Zhang,Wuying Ma,Shaozhong Yue,Yue Hao,Xiaoping Ouyang

{"title":"Study on the mechanism of performance degradation in β-Ga2O3 heterojunction diodes under 10 MeV proton irradiation","authors":"Yahui Feng,Rui Jia,Hongxia Guo,Zhiwen Gao,Xiaoyu Pan,Jinxin Zhang,Wuying Ma,Shaozhong Yue,Yue Hao,Xiaoping Ouyang","doi":"10.1063/5.0354396","DOIUrl":"https://doi.org/10.1063/5.0354396","url":null,"abstract":"In this Letter, the performance degradation mechanisms of β-Ga2O3 heterojunction diodes (HJDs) under 10 MeV proton irradiation have been investigated. After proton irradiation with a fluence of 1 × 1013 p/cm2, the forward current density (JF) decreased by 9.9%, the specific on-resistance (Ron, sp) increased from 16.2 to 18.0 mΩ cm2, and the breakdown voltage (Vbr) increased by approximately 310 V. The results of the electrical stress test indicate that the JF of HJDs gradually decreases as the duration of the applied electrical stress increases. Low-frequency noise measurements were carried out in order to characterize the defects introduced into the HJDs after proton irradiation. Meanwhile, to further elucidate the underlying damage mechanism of HJDs, the effect of proton irradiation on the trap states was also studied using frequency-dependent conductivity (Gp/ω) techniques. The results indicate that the density of trap states at NiO/β-Ga2O3 increases from 2.08–9.78 × 1011 cm−2 eV−1 to 1.25–2.87 × 1012 cm−2 eV−1, accompanied by a slight increase in trap activation energy from 0.0042–0.061 to 0.0265–0.075 eV after 10 MeV proton irradiation. The research outcomes provide an important theoretical reference for evaluating the space radiation tolerance of Ga2O3-based power diodes.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"21 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149208988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Engineering Ag+ flux via PMMA incorporation for stable threshold switching and temporal neuromorphic processing in flexible SnO2 quantum dot memristors 在柔性SnO2量子点记忆电阻器中，通过PMMA掺入Ag+磁通实现稳定阈值开关和时间神经形态处理

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-12 DOI: 10.1063/5.0354533

Qiuxu Yu,Shuyi Li,Wei Mi,Di Wang,Lin'an He,Gangri Cai,Liwei Zhou,Jinshi Zhao

{"title":"Engineering Ag+ flux via PMMA incorporation for stable threshold switching and temporal neuromorphic processing in flexible SnO2 quantum dot memristors","authors":"Qiuxu Yu,Shuyi Li,Wei Mi,Di Wang,Lin'an He,Gangri Cai,Liwei Zhou,Jinshi Zhao","doi":"10.1063/5.0354533","DOIUrl":"https://doi.org/10.1063/5.0354533","url":null,"abstract":"In this work, flexible Ag/SnO2 quantum dots (QDs):PMMA (1:0, 1:0.5, 1:1, and 1:1.5)/ITO memristors were fabricated by blending SnO2 QDs and PMMA at different volume ratios. The polymer-assisted Ag+ migration engineering strategy enables effective regulation of conductive filament evolution, inducing a controllable transition from unstable nonvolatile resistive switching to highly stable threshold switching (TS). The Ag/SnO2 QDs:PMMA (1:1)/ITO device exhibits a switching window of ∼25, stable TS over 104 cycles, and excellent mechanical reliability after 104 bending cycles at a bending radius of 4 mm. The polymer matrix modulates Ag+ migration kinetics, facilitating the formation of uniformly distributed metastable. Benefiting from these characteristics, the Ag/SnO2 QDs:PMMA (1:1)/ITO device enables leaky integrate-and-fire and adaptive leaky integrate-and-fire neuron functions. Furthermore, the intrinsic volatile conductance relaxation enables time-dependent image feature extraction by dynamically modulating convolutional weights through Ag filament evolution. This work demonstrates that polymer-assisted Ag+ migration engineering provides an effective strategy for developing flexible volatile memristors toward compact neuromorphic computing hardware.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"11 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149209025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Device-aware compensation of nonideal spintronic synapses for electrocardiogram classification using spiking neural networks 非理想自旋电子突触的装置感知补偿，用于脉冲神经网络的心电图分类

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-12 DOI: 10.1063/5.0355051

Xing Liu,Yuxuan Yang,Cheng Chen,Fangye Lin,Xinjian Zhou,Weisheng Zhao,Shuyuan Shi

{"title":"Device-aware compensation of nonideal spintronic synapses for electrocardiogram classification using spiking neural networks","authors":"Xing Liu,Yuxuan Yang,Cheng Chen,Fangye Lin,Xinjian Zhou,Weisheng Zhao,Shuyuan Shi","doi":"10.1063/5.0355051","DOIUrl":"https://doi.org/10.1063/5.0355051","url":null,"abstract":"Spintronic synapses offer a promising route toward low-power neuromorphic hardware for edge intelligence. Their nonvolatility, multilevel tunability, and compatibility with event-driven spiking neural networks (SNNs) make them attractive for temporal biomedical signal processing. Moving beyond conventional demonstrations of synaptic plasticity, here we examine how nonideal spin–orbit torque (SOT) synaptic updates affect SNN learning and how they can be compensated. TaMo/CoFeB/MgO/Ta SOT devices with perpendicular magnetic anisotropy exhibit nonvolatile multilevel anomalous Hall resistance states and reversible long-term potentiation and depression. Combined finite-element and micromagnetic simulations indicate that the nonlinear weight evolution is closely associated with spatially nonuniform SOT-driven domain dynamics. Incorporating the measured update curves into an SNN for MIT-BIH electrocardiogram abnormal-beat classification shows that device nonideality strongly degrades recognition of minority-class abnormal beats. A device-aware compensation strategy restores balanced effective updates, bringing the overall accuracy close to the ideal-update reference (95.06% vs 95.23%). It also increases the F1 score for the minority F-class abnormal beats from 11.86% to 64.08%. This work highlights device-aware compensation as an effective route for translating nonideal spintronic synapses into practical low-power biomedical neuromorphic hardware. Such hardware is promising for wearable health-monitoring applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"86 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149209026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Thermodynamic and kinetic engineering of bi-doped InSe for ultrafast, broadband, and highly stable optoelectronics 用于超快、宽带和高稳定光电子学的双掺杂铟硒的热力学和动力学工程

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-12 DOI: 10.1063/5.0356069

Xiongli Wu,Shunru Zhang,Shanshan Li

{"title":"Thermodynamic and kinetic engineering of bi-doped InSe for ultrafast, broadband, and highly stable optoelectronics","authors":"Xiongli Wu,Shunru Zhang,Shanshan Li","doi":"10.1063/5.0356069","DOIUrl":"https://doi.org/10.1063/5.0356069","url":null,"abstract":"Two-dimensional (2D) indium selenide (InSe) holds great promise for optoelectronic applications, yet its practical application remains severely limited by high contact resistance, narrow spectral absorption range, and pronounced susceptibility to environmental degradation. Here, a bismuth (Bi) doping strategy is studied to engineer the thermodynamic and kinetic transport properties of InSe field-effect transistors. An optimal nominal Bi content of 25% leads to a pronounced increase in electron density, which effectively narrows the Schottky barrier at the metal–semiconductor interface, yielding a minimized contact resistance of 0.9 kΩ μm and a high field-effect mobility of 412 cm2 V−1 s−1. Concurrently, dopant-induced bandgap renormalization extends the optical response up to 980 nm. This synergistic modulation of interfacial tunneling probability and the joint density of states culminates in a high photoresponsivity and detectivity of 580 A W−1 and 2.52 × 1011 Jones, respectively, while elegantly preserving sub-millisecond response kinetics. Moreover, Bi incorporation suppresses the adsorption of oxygen and moisture on the InSe surface, substantially improving the stability of the unencapsulated devices, which retain 90.2% of their initial photocurrent after 90 days of exposure. This work comprehensively elucidates the interplay between defect dynamics and bandgap engineering, presenting a viable paradigm for robust and broadband 2D optoelectronics.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"17 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149209027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Full-phase single-layer metasurfaces with C4-symmetric resonators via multipolar interference 基于多极干涉的c4对称谐振腔的全相单层超表面

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-12 DOI: 10.1063/5.0358138

Fang-Yuan Qi,Ruichao Zhu,Zhihao Guo,Jiechu Liu,Zhihui Zhang,Weiqiang Gong,Jiafu Wang

{"title":"Full-phase single-layer metasurfaces with C4-symmetric resonators via multipolar interference","authors":"Fang-Yuan Qi,Ruichao Zhu,Zhihao Guo,Jiechu Liu,Zhihui Zhang,Weiqiang Gong,Jiafu Wang","doi":"10.1063/5.0358138","DOIUrl":"https://doi.org/10.1063/5.0358138","url":null,"abstract":"Complete and efficient manipulation of electromagnetic (EM) waves is a cornerstone for creating advanced functional devices. However, conventional single-layer passive metasurfaces often face an intrinsic trade-off between phase-modulation range and reflection efficiency. To overcome this limitation, we propose and demonstrate a design paradigm that achieves full 360° phase coverage with near-perfect reflectivity by intentionally engineering the unit cell's symmetry. Specifically, by reducing the symmetry from C4v to C4, we introduce a magnetic dipole resonance that hybridizes with the original electric dipole mode. This dual-resonance interference closes the phase gap and circumvents amplitude nulls, while the preserved C4 rotational symmetry guarantees a robust polarization-insensitive response. By systematically varying the geometry at 10 GHz, these multipolar modes are synergistically tuned for continuous phase control. To validate this concept, a library of 36 unit cells was established to demonstrate two functional metasurfaces for electromagnetic focusing and holographic imaging. This work provides a robust and elegant paradigm for developing single-layer passive metasurfaces with superior performance, promising wide applications in high-performance microwave imaging, next-generation wireless communications, and advanced radar systems.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"33 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149209031","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Direct imaging of stress field around a dislocation in diamond 金刚石中位错周围应力场的直接成像

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-12 DOI: 10.1063/5.0353643

Takeyuki. Tsuji,Shunta Harada,Tokuyuki Teraji

{"title":"Direct imaging of stress field around a dislocation in diamond","authors":"Takeyuki. Tsuji,Shunta Harada,Tokuyuki Teraji","doi":"10.1063/5.0353643","DOIUrl":"https://doi.org/10.1063/5.0353643","url":null,"abstract":"Dislocations are fundamental crystal defects whose stress fields govern a wide range of material properties. The analytical form of the stress tensor around a dislocation was established by elasticity theory more than 80 years ago and has provided a theoretical basis for evaluating essential characteristics of dislocations. However, direct experimental verification has long remained out of reach because it has been difficult to measure the components of the stress tensor with conventional methods. Here, we present the experimental visualization of four components of the stress tensor around a dislocation in diamond. Using quantum sensors based on nitrogen-vacancy centers, we mapped the shear components (σxy, σyz, and σzx) together with the trace of the stress tensor (σxx + σyy + σzz) around a region where the stress field was considered to be dominated by a single 45° dislocation. The observation showed that the variations of stress in σxx + σyy + σzz, σxy, σyz, and σzx were approximately ±0.03, ±0.01, ±0.01, and ±0.01 GPa, respectively, and the distribution of stress exhibited a point-symmetric shape centered around the dislocation. This experimental result exhibited good agreement with the theoretical framework, thus providing experimental validation of four components of the stress tensor around the dislocation derived from the elastic theory.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"58 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149209032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Nitrogen-vacancy centers in hexagonal diamond exhibit long coherence times 六方金刚石中的氮空位中心具有较长的相干时间

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-12 DOI: 10.1063/5.0355148

Gabriel Kumar,Siyuan Chen,Victor Wen-zhe Yu,Giulia Galli

引用次数: 0

Binocular low-distortion metalens for depth sensing 用于深度传感的双目低畸变超透镜

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-12 DOI: 10.1063/5.0356617

Xuemei Yang,Guangzhun Sui,Mingze Liu,Haocun Qi,Maowen Song,Yaqi Jin,Chengxiu Liu,Ting Xu

引用次数: 0

Thermal conductivity and temperature-induced bandgap renormalization in crystalline and amorphous Ga2O3 晶体和非晶Ga2O3的热导率和温度诱导的带隙重整化