Applied Physics Letters最新文献_第4页

Destructive dielectric breakdown of 2D muscovite mica 二维云母的破坏性介电击穿

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-09-10 DOI: 10.1063/5.0222048

A. Maruvada, S. J. O'Shea, J. Deng, K. Shubhakar, N. Raghavan, K. L. Pey

{"title":"Destructive dielectric breakdown of 2D muscovite mica","authors":"A. Maruvada, S. J. O'Shea, J. Deng, K. Shubhakar, N. Raghavan, K. L. Pey","doi":"10.1063/5.0222048","DOIUrl":"https://doi.org/10.1063/5.0222048","url":null,"abstract":"This study investigates the destructive breakdown (DBD) phenomenon in the van der Waals gate dielectric 2D muscovite mica (4–12 nm thick), focusing on its electrical reliability as a gate dielectric material. Capacitor test structures were electrically stressed, and the resulting impact on the physical structure was analyzed using atomic force microscopy. The volume of material removed in a DBD event is found, and the energy required (Ereq) to vaporize the volume was calculated. It is found that Ereq is proportional to the average electrical energy dissipated in the capacitor during breakdown (BD), indicating a direct correlation between damage caused during DBD and the current flow at BD location. In contrast to other thin film dielectrics, the 2D mica is highly susceptible to DBD even at very low current density (&lt;1 A/cm2) and the abrupt, destructive BD more resembles that of thick film dielectric breakdown. An explanation for these finding is proposed in which intercalated K+ ions agglomerate around defects generated by the electrical stressing such that the defect density increases substantially in the local vicinity of BD locations, which leads to increased current and associated Joule heating after the BD event.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":4.0,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142166395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Frequency stabilization of adiabatic temperature change in Fe50Rh50 alloy in a cyclic magnetic field of 1.2 T 1.2 T 循环磁场中 Fe50Rh50 合金绝热温度变化的频率稳定化

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-09-10 DOI: 10.1063/5.0222360

A. G. Gamzatov, P. A. Igoshev, A. M. Aliev, K. Qiao, F. Hu, J. Wang, B. Shen

{"title":"Frequency stabilization of adiabatic temperature change in Fe50Rh50 alloy in a cyclic magnetic field of 1.2 T","authors":"A. G. Gamzatov, P. A. Igoshev, A. M. Aliev, K. Qiao, F. Hu, J. Wang, B. Shen","doi":"10.1063/5.0222360","DOIUrl":"https://doi.org/10.1063/5.0222360","url":null,"abstract":"We present the results of direct measurements of the adiabatic temperature change (ΔTad) for the Fe50Rh50 alloy in a cyclic magnetic field (CMF) of 1.2 T. It is shown that increasing the frequency of the CMF from 1 to 30 Hz is accompanied by a shift of the position of temperature dependence ΔTad(T) maximum, Tmax, toward low temperatures. With an increase in the CMF frequency from 1 to 5 Hz, the ΔTmax value decreases by ∼12%. A further increase in frequency leads to stabilization of the effect. In the vicinity of the antiferromagnetic-ferromagnetic phase transition point TC = 370 K, ΔTad exhibits unconventional frequency behavior: while at T well above TC, the value of ΔTad monotonously decreases as frequency increases, at T = 370.4 K; an interval of frequency-independent ΔTad up to 10 Hz is observed, and at 368 K &lt; T &lt; TC, the maximum of ΔTad(f) dependence is found in the interval 1 &lt; f &lt; 10 Hz. Such behavior in the future can be applied in magnetic cooling technology due to large values of ΔTad and the frequency stability of the effect in alternating fields. The specific cooling power reaches giant values of ∼22 W/g at 20 Hz, which is comparable to the values under the same conditions for Gd −21.6 W/g. The unconventional behavior of ΔTad in the CMF is discussed in the context of the role of secondary phase localization, which leads to an enhanced internal local magnetic field and dynamic effects of ΔTad.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":4.0,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142166396","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dipole-assisted hole injection for efficient blue quantum dot light-emitting diodes 用于高效蓝色量子点发光二极管的偶极子辅助空穴注入技术

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-09-10 DOI: 10.1063/5.0226368

Youwei Zhang, Xiangtian Xiao, Ruiqiang Xu, Jingrui Ma, Fumin Lu, Yifan Ye, Xiaoli Zhang, Kai Wang, Xiao Wei Sun

{"title":"Dipole-assisted hole injection for efficient blue quantum dot light-emitting diodes","authors":"Youwei Zhang, Xiangtian Xiao, Ruiqiang Xu, Jingrui Ma, Fumin Lu, Yifan Ye, Xiaoli Zhang, Kai Wang, Xiao Wei Sun","doi":"10.1063/5.0226368","DOIUrl":"https://doi.org/10.1063/5.0226368","url":null,"abstract":"Quantum dot light-emitting diodes (QLEDs) present commercial potential and application prospects in both lighting and display technologies. Blue quantum dots (QDs) possess a substantial bandgap and a profound valence band. The significant potential barrier between blue quantum dots and the hole transport layer leads to an imbalance in charge transfer, thereby adversely impacting the device performance. Self-assembled monolayers are attractive for carrier transport. Here, a dynamic self-assembly method is introduced, doping [2-(9H-carbazol-9-yl)ethyl]phosphonic acid (2PACz) into Poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) to form electric dipoles at interfaces, realizing better energy level alignment and hole injection rate. The maximum external quantum efficiency rises from 8.77% to 17.26% with 2PACz: PEDOT:PSS strategy, representing a twofold enhancement. This result demonstrates that small molecules undergo dynamic self-assembled bilateral motions during crystallization process, aligning energy levels and passivating interfacial trap states, thereby endowing blue QLEDs with high brightness and high efficiency. This work offers a viable pathway for broader applications of blue QLEDs.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":4.0,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142166401","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design of shape memory alloys with low hysteresis via multiple phase coexistence 通过多相共存设计低滞后的形状记忆合金

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-09-10 DOI: 10.1063/5.0206923

Deqing Xue, Qian Zuo, Yan Pan, Guojun Zhang

引用次数: 0

High-performing organic/quantum dot hybrid upconversion device based on a single-component near-infrared-sensitive layer 基于单组分近红外敏感层的高性能有机/量子点混合上转换器件

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-09-10 DOI: 10.1063/5.0228406

Ke Wang, Yuanhong Hu, Lixiang Chen, Haijun Jiang, Haohong Jiang, Xingwen Tan, Qiaoming Zhang, Yanlian Lei

{"title":"High-performing organic/quantum dot hybrid upconversion device based on a single-component near-infrared-sensitive layer","authors":"Ke Wang, Yuanhong Hu, Lixiang Chen, Haijun Jiang, Haohong Jiang, Xingwen Tan, Qiaoming Zhang, Yanlian Lei","doi":"10.1063/5.0228406","DOIUrl":"https://doi.org/10.1063/5.0228406","url":null,"abstract":"A donor/acceptor (D/A) heterojunction with an interfacial energetic offset is demonstrated to enable efficient exciton dissociation in organic photodetectors and upconversion devices (UCDs). Unfortunately, this approach usually encounters complicated optimization procedures and interfacial instability. Herein, we present an alternative strategy for achieving high-performing UCDs by utilizing an organic single-component near-infrared (NIR)-sensitive layer instead of a D/A heterojunction. The showcased UCD is constructed by vertically stacking an organic single-component Y6 NIR-detection unit and a quantum dot light-emitting unit. Due to the high dielectric constant and low exciton binding energy of the non-fullerene acceptor Y6, free carriers are directly and spontaneously generated upon NIR light excitation. As a result, the single-component UCD achieves a low light detection capability of 2.5 μW/cm2, a fast refresh rate of &gt;3.8 × 104, and a high resolution exceeding 1100 dpi, providing a stable optical response to high-frequency NIR signals and high-quality NIR imaging.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":4.0,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142166358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Monolayer-scale AlN/GaN digital alloys grown by plasma-assisted molecular beam epitaxy 通过等离子体辅助分子束外延技术生长的单层级氮化铝/氮化镓数字合金

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-09-10 DOI: 10.1063/5.0215886

Siqi Li, Xiao Liang, Pengfei Shao, Songlin Chen, Zhenhua Li, Xujun Su, Tao Tao, Zili Xie, M. Ajmal Khan, Li Wang, T. T. Lin, Hideki Hirayama, Bin Liu, Dunjun Chen, Ke Wang, Rong Zhang

{"title":"Monolayer-scale AlN/GaN digital alloys grown by plasma-assisted molecular beam epitaxy","authors":"Siqi Li, Xiao Liang, Pengfei Shao, Songlin Chen, Zhenhua Li, Xujun Su, Tao Tao, Zili Xie, M. Ajmal Khan, Li Wang, T. T. Lin, Hideki Hirayama, Bin Liu, Dunjun Chen, Ke Wang, Rong Zhang","doi":"10.1063/5.0215886","DOIUrl":"https://doi.org/10.1063/5.0215886","url":null,"abstract":"The efficiency of usual AlGaN based deep ultraviolet light-emitting devices is still quite low. The difficulties are basically originated from the fundamental material properties of AlGaN. This work has adopted monolayer-scale (AlN)m/(GaN)n ordered digital alloys (DAs) as alternatives to AlGaN random alloys, m and n are the numbers of monolayers. X-ray diffraction scans have demonstrated clear satellite peaks, verifying good periodicity of AlN/GaN DAs grown by molecular beam epitaxy (MBE), and transmission electron microscopy results have revealed atomically sharp and smooth interfaces and quite precise m:n values agreeing well with designs. The electron densities of Si-doped (AlN)m/(GaN)n DAs with high equivalent Al compositions are significantly higher than those of conventional AlGaN:Si random alloys grown in the same MBE system. Si dopant ionization energies in DAs are only 2–5 meV, much lower than that for usual random alloys. The red shift of the light emission for DAs with thinner AlN barriers has suggested strong coupling between the GaN wells and thus formation of a miniband in a vertical direction. The results have demonstrated the potential of the (AlN)m/(GaN)n DAs as electronically functional alternatives for various device applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":4.0,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142166359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhanced and tunable near-field thermophotovoltaics driven by hybrid polaritons 由混合极化子驱动的增强型可调近场热光电技术

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-09-10 DOI: 10.1063/5.0220172

Lin Li, Xiaohu Wu, Haotuo Liu, Zhimin Yang, Kun Yu

引用次数: 0

Transmission interference fringe (TIF) technique for the dynamic visualization of evaporating droplet 用于蒸发液滴动态可视化的透射干涉条纹 (TIF) 技术

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-09-10 DOI: 10.1063/5.0223571

Iltai Isaac Kim, Yang Lie, Hongkyu Yoon, Jeffrey A. Greathouse

{"title":"Transmission interference fringe (TIF) technique for the dynamic visualization of evaporating droplet","authors":"Iltai Isaac Kim, Yang Lie, Hongkyu Yoon, Jeffrey A. Greathouse","doi":"10.1063/5.0223571","DOIUrl":"https://doi.org/10.1063/5.0223571","url":null,"abstract":"The transmission interference fringe (TIF) technique was developed to visualize the dynamics of evaporating droplets based on the Reflection Interference Fringe (RIF) technique for micro-sized droplets. The geometric formulation was conducted to determine the contact angle (CA) and height of macro-sized droplets without the need for the prism used in RIF. The TIF characteristics were analyzed through experiments and simulations to demonstrate a wider range of contact angles from 0 to 90°, in contrast to RIF's limited range of 0–30°. TIF was utilized to visualize the dynamic evaporation of droplets in the constant contact radius (CCR) mode, observing the droplet profile change from convex-only to convex-concave at the end of dry-out from the interference fringe formation. The TIF also observed the contact angle increase from the fringe radius increase. This observation is uniquely reported as the interference fringe (IF) technique can detect the formation of interference fringe between the reflection from the center convex profile and the reflection from the edge concave profile on the far-field screen. Unlike general microscopy techniques, TIF can detect far-field interference fringes as it focuses beyond the droplet-substrate interface. The formation of the convex-concave profile during CCR evaporation is believed to be influenced by the non-uniform evaporative flux along the droplet surface.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":4.0,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142166399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Space charge-induced capacitance recovery in blue quantum dot light-emitting diodes 蓝色量子点发光二极管中的空间电荷诱导电容恢复

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-09-10 DOI: 10.1063/5.0226752

Xiangwei Qu, Jingrui Ma, Depeng Li, Kai Wang, Xiao Wei Sun

引用次数: 0

Kinetics of monolayer MoS2-encapsulated nanobubbles on hexagonal boron nitride substrates 六方氮化硼基底上的单层 MoS2- 封装纳米气泡动力学

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-09-10 DOI: 10.1063/5.0224361

Zihan Liu, Yingchun Jiang, Dingli Wang, Junpeng Lai, Huimin Zhou, Jia Deng, Changhong Ke

引用次数: 0