Applied Physics Letters最新文献_第5页

Velocity-field measurements in a GaN/AlN two-dimensional hole gas GaN/AlN二维空穴气体的速度场测量

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-22 DOI: 10.1063/5.0276423

Joseph E. Dill, Jonah Shoemaker, Kazuki Nomoto, Jimy Encomendero, Zexuan Zhang, Chuan F. C. Chang, Jie-Cheng Chen, Feliciano Giustino, Stephen Goodnick, Debdeep Jena, Huili Grace Xing

{"title":"Velocity-field measurements in a GaN/AlN two-dimensional hole gas","authors":"Joseph E. Dill, Jonah Shoemaker, Kazuki Nomoto, Jimy Encomendero, Zexuan Zhang, Chuan F. C. Chang, Jie-Cheng Chen, Feliciano Giustino, Stephen Goodnick, Debdeep Jena, Huili Grace Xing","doi":"10.1063/5.0276423","DOIUrl":"https://doi.org/10.1063/5.0276423","url":null,"abstract":"We report measurements and an improved analysis methodology to characterize the velocity-field characteristics of a polarization-induced two-dimensional hole gas in a GaN/AlN heterostructure at both room and cryogenic temperatures, using pulsed voltage and current through a micrometer-scale constriction. These high-bias measurements are made possible by Ohmic contacts that remain sufficiently transparent (&lt;50 Ω mm above 10 mA/mm current) at cryogenic temperatures. We observe a room temperature saturation velocity of (2.1 ± 0.2)×106 cm/s and associated mobility of ∼7–12 cm2/V s for a hole density of 4×1013 cm−2, which increases to (4.4 ± 0.4)×106 cm/s at 4.2 K, with an associated mobility of ∼25–50 cm2/V s. The measured ensemble hole saturation velocity in this geometry, which is suitable for field-effect transistor channels, is lower than that of holes measured in lightly-doped n-type 3D bulk GaN (6.63 ×106 cm/s), owing to the 2D geometry and high carrier density of the two-dimensional hole gas, and degraded hole mobility from recess etching. Measured velocity-field contours are corroborated against bulk density functional theory and two-dimensional full-band real-space cellular Monte Carlo simulations under different surface boundary conditions.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"12 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144684691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Strain-induced topological transitions in epitaxial films of cadmium arsenide 砷化镉外延薄膜中应变诱导的拓扑转变

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-22 DOI: 10.1063/5.0281482

Sina Ahadi, Victor Huang, Arman Rashidi, Simon Munyan, Michael Smith, Victor L. Quito, Peter P. Orth, Ivar Martin, Susanne Stemmer

引用次数: 0

Polarization-sensitive short-wave infrared photodetector with high responsivity enabled by PdSe2/Bi2O2Se heterostructure PdSe2/Bi2O2Se异质结构实现高响应度偏振敏感短波红外光电探测器

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-22 DOI: 10.1063/5.0279492

Yinan Wang, Xinlei Zhang, Shizheng Wang, Zhaofu Chen, Peng Zhang, Fang Yang, Weiwei Zhao, Junpeng Lu, Hongwei Liu

{"title":"Polarization-sensitive short-wave infrared photodetector with high responsivity enabled by PdSe2/Bi2O2Se heterostructure","authors":"Yinan Wang, Xinlei Zhang, Shizheng Wang, Zhaofu Chen, Peng Zhang, Fang Yang, Weiwei Zhao, Junpeng Lu, Hongwei Liu","doi":"10.1063/5.0279492","DOIUrl":"https://doi.org/10.1063/5.0279492","url":null,"abstract":"Short-wave infrared (SWIR) polarized detectors, renowned for their high-resolution imaging and atmospheric penetration capabilities, are pivotal for advancing autonomous navigation, industrial automation, and space communications. The responsivity of commercial InGaAs photodetectors (typically ∼1 A/W at 1550 nm) serves as a key benchmark for high-performance detection at this wavelength. However, achieving higher responsivity and potentially streamlining the fabrication process remain research goals. Herein, we present a PdSe2/Bi2O2Se heterostructure detector that synergistically utilizes the effective separation of photogenerated electron–hole pairs and photogating effect to achieve breakthrough performance in SWIR. A high responsivity of 21 A/W, an external quantum efficiency of 1680%, and a specific detectivity of 5.7 × 109 Jones at 1550 nm were demonstrated. Simultaneously, it achieves a fast response time (131/492 μs) and polarization-sensitive functionality. High-resolution SWIR and polarized light imaging were also demonstrated. These findings outline an approach to developing miniaturized, room-temperature SWIR detectors with high-performance metrics.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"16 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144684692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Synergistic optimization effects of energy band and interface engineering on the thermoelectric properties of Bi0.46Sb1.54Te3 能带和界面工程对Bi0.46Sb1.54Te3热电性能的协同优化效应

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-22 DOI: 10.1063/5.0270925

Kaiwen Zhao, Mengyao Li, Yingjiu Zhang, Hongzhang Song

引用次数: 0

High-voltage metamorphic 1064 nm InGaAs multi-junction laser power converters 高压变质1064nm InGaAs多结激光功率变换器

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-22 DOI: 10.1063/5.0272594

Mingjiang Xia, Yurun Sun, Tingting Li, Shuzhen Yu, Jianrong Dong

引用次数: 0

An energy-selective rasorber with switchable transmission/absorption band 具有可切换传输/吸收带的能量选择性吸收器

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-22 DOI: 10.1063/5.0274863

Teng-ge A, Qi-feng Liu, Han Xiong, Xiao-wen Wu

引用次数: 0

Tuning magnetocaloric effect by carbon interstitial phase in RE15Si9Cx (RE = Er, Ho) compounds for hydrogen liquefaction 利用碳间隙相调节RE15Si9Cx （RE = Er, Ho）化合物的磁热效应用于氢液化

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-21 DOI: 10.1063/5.0281852

Lu Tian, Haobo Sun, Jianjian Gong, Zhenxing Li, Guodong Liu, Jun Shen, Zhaojun Mo

引用次数: 0

Widely tunable short-wave mid-infrared hybrid lasers enabled by a single ultra-compact silicon microring resonator 宽调谐短波中红外混合激光器由一个超紧凑的硅微环谐振器实现

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-21 DOI: 10.1063/5.0275617

Jincheng Wei, Zhengqi Geng, Kan Huang, Yihang Chen, Ying Yu, Chengao Yang, Zhichuan Niu, Ruijun Wang, Siyuan Yu

{"title":"Widely tunable short-wave mid-infrared hybrid lasers enabled by a single ultra-compact silicon microring resonator","authors":"Jincheng Wei, Zhengqi Geng, Kan Huang, Yihang Chen, Ying Yu, Chengao Yang, Zhichuan Niu, Ruijun Wang, Siyuan Yu","doi":"10.1063/5.0275617","DOIUrl":"https://doi.org/10.1063/5.0275617","url":null,"abstract":"Chip-scale widely tunable laser sources operating in the short-wave mid-infrared range (2–2.5 μm) have garnered significant interest for applications such as spectroscopic sensing, industrial gas detection, and biomarker measurement. However, conventional chip-scale designs rely on bulky Vernier-effect architectures with multiple filters, introducing complexity, large footprints, and intricate control systems that hinder scalability and practical deployment. In this work, we demonstrate widely tunable GaSb-silicon hybrid lasers that employ a single ultra-compact silicon microring resonator with a 5 μm radius as the wavelength-selective element. The microring exhibits a tuning range exceeding 34 nm in the 2 μm waveband. By integrating three different gain chips, we achieve hybrid lasers with wavelength tuning ranges of 22, 22, and 17 nm centered at 1.95, 2.11, and 2.37 μm, respectively. The lasers demonstrate a side-mode suppression ratio greater than 50 dB, ensuring high spectral purity. This ultra-compact design, combined with a straightforward tuning mechanism, makes the proposed laser highly suitable for practical applications in spectroscopy and detection.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"212 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144670103","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dual-channel linear-to-circular polarization conversion based on a photonic time crystal 基于光子时间晶体的双通道线圆偏振转换

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-21 DOI: 10.1063/5.0272937

Jun-Rui Pan, Shuo Dai, Hai-Feng Zhang

{"title":"Dual-channel linear-to-circular polarization conversion based on a photonic time crystal","authors":"Jun-Rui Pan, Shuo Dai, Hai-Feng Zhang","doi":"10.1063/5.0272937","DOIUrl":"https://doi.org/10.1063/5.0272937","url":null,"abstract":"The manipulation of electromagnetic (EM) waves in the time dimension provides a higher degree of freedom in controlling these waves, which has led to significant research in the field of time-varying media. Previous studies on polarization conversion in time-varying media have achieved line-to-line polarization conversion, altering the direction of EM wave vibration. This paper proposes a dual-channel linear-to-circular polarization conversion (DLCPC) that transforms linear polarization waves into circular polarization waves in both the forward and backward directions. Additionally, it is shown that DLCPC can be achieved within the bandgaps of both s-waves and p-waves, enabling a controlled wave amplification effect. The theoretical results, calculated using the transmission matrix method, are compared with numerical verifications based on the finite-difference time-domain method, confirming the validity of the findings. This study expands the research scope in the field of photonic time crystals (PTCs), demonstrating the use of PTCs for DLCPC, and establishes a relationship between this conversion and the wave amplification effect of the PTCs. The controlled wave amplification effect is achieved without impacting the DLCPC.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"14 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144670094","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Demonstration of high threshold voltage Tri-gate hybrid ferroelectric gate stack GaN HEMT with 1.2 GW/cm2 Baliga's figure-of-merit and highly robust TDDB stability 高阈值电压三栅极混合铁电栅极堆叠GaN HEMT的演示，具有1.2 GW/cm2 Baliga的品质系数和高度鲁棒的TDDB稳定性

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-21 DOI: 10.1063/5.0266142

Rahul Rai, Hung Duy Tran, Tsung Ying Yang, Baquer Mazhari, Edward Yi Chang

{"title":"Demonstration of high threshold voltage Tri-gate hybrid ferroelectric gate stack GaN HEMT with 1.2 GW/cm2 Baliga's figure-of-merit and highly robust TDDB stability","authors":"Rahul Rai, Hung Duy Tran, Tsung Ying Yang, Baquer Mazhari, Edward Yi Chang","doi":"10.1063/5.0266142","DOIUrl":"https://doi.org/10.1063/5.0266142","url":null,"abstract":"This work demonstrates a highly robust time-dependent dielectric breakdown (TDDB) lifetime analysis and high threshold voltage (Vth) in a tri-gate metal–insulator–semiconductor high-electron-mobility transistor (MIS-HEMT). The combination of tetramethylammonium hydroxide treated tri-gate and hybrid ferroelectric gate stack allows effective depletion of the 2-DEG channel by trapped charges in the hafnium oxynitride charge-trapping layer, resulting in a high threshold voltage (Vth) of 3.15 ± 0.2 V, a higher off-state breakdown voltage of 870 V, a low specific on-resistance (RON-SP) of 0.64 mΩ cm2, a high maximum drain current density (IDS-MAX) of 987 ± 10 mA/mm, and an excellent high-power figure-of-merit up to 1.2 GW/cm2. Finally, a TDDB test analyzes the gate insulator degradation of GaN-based tri-gate MIS-HEMTs. The device demonstrates an operating voltage of 12.02 V at a failure rate of 1% for a 10-year lifetime at room temperature by fitting the data with a power law, which is the highest value amongst reported GaN HEMTs.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"14 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144670104","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0