Muhammad Rafiq, Hengyue Li, Xinyue Wang, Xiang Liao, Qiang Zeng, Muhammad Tahir, Enbing Bi, Fangyang Liu, Mustafa Haider, Junliang Yang
{"title":"Defect passivated wide-bandgap perovskite films for high performance four-terminal perovskite/silicon tandem solar cells","authors":"Muhammad Rafiq, Hengyue Li, Xinyue Wang, Xiang Liao, Qiang Zeng, Muhammad Tahir, Enbing Bi, Fangyang Liu, Mustafa Haider, Junliang Yang","doi":"10.1063/5.0277013","DOIUrl":"https://doi.org/10.1063/5.0277013","url":null,"abstract":"Wide-bandgap (WBG) perovskite solar cells (PSCs) have garnered significant attention due to their potential to form high-quality, stable films, which can significantly enhance the efficiency of silicon-based tandem solar cells (TSCs). However, the performance of these devices is hindered by poor crystallization, a high intrinsic trap density in the WBG perovskite film, and nonradiative recombination, primarily due to bulk defects. In response to these challenges, we introduce 3-pyridinylmethylammonium iodide (3-PyAI) as an additive to passivate intrinsic defects within the bulk of the perovskite film. The addition of 3-PyAI significantly lowers defect induced nonradiative recombination by developing interactions with uncoordinated Pb2+ ions and FA+ cations. The resulting 3-PyAI-modified perovskite film significantly improves crystallinity, enlarges grain size, enhances bulk quality, and minimizes nonradiative recombination defects. Consequently, the methylammonium-free Cs0.22FA0.78Pb(I0.85Br0.15)3 PSCs demonstrate power conversion efficiency (PCE) of 21.75%, much higher than that of the control device at 19.60%. Building on this advance, we integrated a silicon bottom solar cell, developing a four-terminal (4T) TSC that achieved a champion PCE of 30.52%. This work addresses the critical performance bottlenecks in WBG-PSCs and establishes a robust framework for realizing high-efficiency TSCs, representing a significant step toward the practical implementation of next-generation photovoltaic technologies.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"12 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144670110","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Anoir Hamdi, Driss Mouloua, Loїck Pichon, Nitul S Rajput, Mimoun El Marssi, Mustapha Jouiad, My Ali El Khakani, Emanuele Orgiu
{"title":"Thickness-driven drastic transition in the electrical conductivity of ultrathin MoS2 films grown by pulsed laser deposition","authors":"Anoir Hamdi, Driss Mouloua, Loїck Pichon, Nitul S Rajput, Mimoun El Marssi, Mustapha Jouiad, My Ali El Khakani, Emanuele Orgiu","doi":"10.1063/5.0273602","DOIUrl":"https://doi.org/10.1063/5.0273602","url":null,"abstract":"We report on the pulsed laser deposition of ultrathin MoS2 films and how their electrical conductivity is significantly sensitive to thickness variation. It is shown that the thickness of MoS2 ultrathin films can be fairly controlled over the (1.3–12.6) nm range by simply adjusting the number of incident laser ablation pulses (NLP). Noteworthy, the electrical conductivity of the MoS2 ultrathin films was found to change by more than 6 orders of magnitude, abruptly switching from semiconducting to conductive behavior, upon increasing the thickness in the nm range. Raman analyses revealed that our ultrathin films comprise both 2H and 1T phases with a clear tendency for the metallic 1T phase to increase at the expense of its 2H phase counterpart, as the film thickness is increased from 1.3 to ∼13 nm. Concomitantly, their density of defects also increases with N. Our results highlight the significant structural and electrical changes that occur in MoS2 ultrathin films as their thickness is barely increased from a few to only several layers. A direct relationship between the conductivity of the pulsed laser deposition (PLD)-MoS2 ultrathin films and their structural characteristics (both 1T-MoS2 phase content and density of defects) is established. Finally, this work paves the way for the PLD as an effective synthesis route for the controlled growth of hybrid 2H-/1T-MoS2 ultrathin films with the possibility of wafer scaling.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"20 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144670111","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"CoSe2 nanoparticles catalyzed the formation of Cu-BTC polyhedral nanoframes enabling biosensing of endogenous opioid peptides","authors":"Bharathi Natarajan, Lu Lei, Palanisamy Kannan, Kanagaraj Rajalakshmi, Selvaraj Muthusamy, Yuanguo Xu","doi":"10.1063/5.0284291","DOIUrl":"https://doi.org/10.1063/5.0284291","url":null,"abstract":"We describe a point-of-care biosensing platform for the detection of endogenous opioids using an integrated assay. In this system, cobalt–selenium (Co-Se2) nanoparticles catalyze the formation of tunable Cu-BTC metal–organic framework (MOF) nanostructures (Cu-BTC@Co-Sex:1MOFs), which serve as potential biosensing candidates. These Cu-BTC@Co-Sex:1MOFs are functionalized with mono-target (Anti-Met-Enk or Anti-Leu-Enk) and/or dual-target (Anti-Met-Enk/Leu-Enk) antibodies for the selective and simultaneous recognition of Met-Enkephalin (Met-Enk) and Leu-Enkephalin (Leu-Enk). Bovine serum albumin is employed as a blocking agent to minimize nonspecific binding, thereby enhancing the specificity and reproducibility of the biosensor and enabling the detection of Met-Enk and Leu-Enk within clinically relevant concentration ranges. Among various MOF configurations, the Cu-BTC@Co-Se3:1MOFs-based biosensing platform exhibits a broad detection range, 1.0–200.0 pg/mL for Met-Enk and 5.0–300.0 pg/mL for Leu-Enk covering physiological concentration ranges, with limits of detection of 0.81 and 3.64 pg/mL, respectively (S/N = 3). These performance characteristics are primarily attributed to the following: (i) a noticeable difference in isoelectric points between Cu-BTC@Co-Se3:1MOFs (≥8.61) and Anti-Met-Enk-Abs (∼4.94), which facilitates electrostatic interactions for effective antibody incorporation; (ii) the distribution of Co-Se2 nanoparticles within the MOF porous cavities and on the surface, providing a high active surface area (57.4 and 51.6 m2/g), which enables the efficient Anti-Met-Enk-Abs antibody immobilization; and (iii) ester-like bridging between antibody carboxyl groups and metal centers (Cu, Co, and Se) through chemical adsorption interactions. Finally, clinical validation with human serum and artificial mouse cerebrospinal fluid showed recovery rates of 90.6%–96.2%, comparable to those from a standard ELISA kit.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"23 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144670100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Muchen Du, Shida Huo, Luojun Du, Yaxian Wang, Enxiu Wu
{"title":"Evidence of electron–phonon coupling in type-II Weyl semimetal TaIrTe4","authors":"Muchen Du, Shida Huo, Luojun Du, Yaxian Wang, Enxiu Wu","doi":"10.1063/5.0272031","DOIUrl":"https://doi.org/10.1063/5.0272031","url":null,"abstract":"TaIrTe4, a time-reversal symmetric Weyl semimetal with the allowed minimum Weyl points, has sparked considerable attention and is appealing for a myriad of intriguing physical phenomena, including chiral anomaly, nonlinear Hall effect, dual quantum spin Hall insulator, and superconductivity. However, the electron–phonon coupling central to understanding the fundamental properties remains largely unexplored. In this work, we demonstrate the tell-tale signature of electron–phonon coupling in the type-II Weyl semimetal TaIrTe4 employing temperature-dependent Raman spectroscopy. Our results reveal that the temperature-dependent energy and lifetime of A1 phonon mode at ∼172 cm−1 diverge from the anharmonic model, evidencing the dominated role of phonon–electron rather than phonon–phonon scattering in phonon decay. The theoretically calculated electron–phonon coupling matrix element of the A1 mode is 0.39 eV, indicating substantial coupling to the electronic state. Our findings provide meaningful insights into understanding the fascinating physical properties and quantum phenomena of Weyl semimetal TaIrTe4.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"95 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144670106","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"An adaptive harmonic AFM probe with enhanced sensitivity for cellular imaging","authors":"Ke Feng, Lei Yuan, Xianmin Zhang","doi":"10.1063/5.0274431","DOIUrl":"https://doi.org/10.1063/5.0274431","url":null,"abstract":"Accurate classification of cellular images plays an indispensable role in early cancer diagnosis. Based on signal enhancement, harmonic atomic force microscopy (AFM), distinguished by its high resolution, demonstrates unique advantages in rapid acquisition and analysis of cellular images. Traditional harmonic probes are generally designed without sufficient consideration of environmental and sample-induced interference on probe vibration. However, in cellular imaging, environmental perturbations and heterogeneous mechanical properties of samples can significantly compromise imaging quality. To address the challenge of precision imaging in multi-environment cellular studies, we have developed an adaptive harmonic atomic force microscopy (A-HAFM) probe capable of generating stable harmonic signals in both atmospheric and liquid environments, enabling high-resolution cellular imaging and precise cell classification. Experimental studies involving 3600 samples of human cervical epithelial cells and human cervical cancer cells with varying invasiveness (HeLa and SiHa) demonstrated that the A-HAFM probe achieved 52.17% improvement in amplitude response sensitivity compared to conventional AFM, along with 60% enhancement in imaging clarity, with classification accuracy for normal vs cancer cells improved by 7.97% and between cancer subtypes (HeLa/SiHa) increased by 12.73%. By precisely characterizing cellular substructures and identifying physiological signatures, this technology establishes a promising platform for cellular-level diagnosis and therapeutic evaluation of cardiovascular diseases, malignant tumors, and other critical illnesses.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"8 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144670107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Tunable THz response in cobalt ferrite via magnetic field modulation","authors":"Zhen Zhou, Lvkang Shen, Xiaohua Xing, Keyu Tan, Die Zou, Qiankun Zhang, Rui Zhu, Zhiyong Wang, Jianquan Yao, Ming Liu, Jianing Chen, Liang Wu","doi":"10.1063/5.0273900","DOIUrl":"https://doi.org/10.1063/5.0273900","url":null,"abstract":"Despite significant advancements in terahertz (THz) generation and detection technologies, the practical deployment of portable THz systems remains constrained by existing modulator limitations, particularly stringent temperature requirements, inefficient thermal management, and high power consumption. Here, we demonstrate a breakthrough in magnetically controlled THz modulation using a CoFe2O4/MgO/F-Mica composite structure. The tunable optical response and dielectric properties of the composite under varying magnetic fields were systematically investigated via THz time-domain spectroscopy. Experimental results revealed a magnetic field-dependent THz transmission attenuation, with systematic suppression of transmission spectra proportional to the applied magnetic field intensity. A theoretical model accounting for external magnetic field variations was proposed, which agrees well with the experimental results regarding the imaginary component. Remarkably, the composite material realizes phase modulation simultaneously under magnetic field. This exceptional magnetic responsiveness significantly broadens the application potential of ferrites in the THz regime. These findings provide critical insights for designing tunable multifunctional THz magnetic devices in 6G communications, medical diagnostics, and nondestructive testing applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"12 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144670080","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Gwang-Seok Chae, Youbin Seol, Hee-Jung Yeom, Chanhee Son, Seunghun Lee, Jung-Hyung Kim, Hyo-Chang Lee
{"title":"Effect of pulsed bias power on electron density modulation in inductively coupled plasma","authors":"Gwang-Seok Chae, Youbin Seol, Hee-Jung Yeom, Chanhee Son, Seunghun Lee, Jung-Hyung Kim, Hyo-Chang Lee","doi":"10.1063/5.0275598","DOIUrl":"https://doi.org/10.1063/5.0275598","url":null,"abstract":"In this study, we investigate the temporal behavior of electron density in an inductively coupled plasma (ICP) subjected to pulsed radio frequency (RF) bias using a Fourier cutoff probe measurement. This diagnostic technique enables high temporal resolution measurements at a relevant timescale, which are essential for capturing the dynamic plasma response during bias modulation. Upon the initiation of bias pulse, a transient drop in electron density—referred to as electron suction—is observed, resulting from the rapid rise in bias voltage outpacing the measured plasma response. Notably, this behavior appears in both E-mode and H-mode conditions of inductively coupled plasma (ICP) discharges, indicating that it is independent of the specific discharge mode. Furthermore, a significant electron suction is observed as the time-averaged electron density decreases. This electron suction induced by the RF pulse can be interpreted through its correlation with plasma and sheath formation. These findings provide critical insight into the transient characteristics of pulsed plasmas and offer guidance for the development of next-generation plasma-based manufacturing technologies.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"9 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144670115","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Justin Rudie, Huong Tran, Yang Zhang, Sylvester Amoah, Sudip Acharya, Hryhorii Stanchu, Mansour Mortazavi, Timothy A. Morgan, Gregory T. Forcherio, Greg Sun, Gregory Salamo, Wei Du, Shui-Qing Yu
{"title":"Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect","authors":"Justin Rudie, Huong Tran, Yang Zhang, Sylvester Amoah, Sudip Acharya, Hryhorii Stanchu, Mansour Mortazavi, Timothy A. Morgan, Gregory T. Forcherio, Greg Sun, Gregory Salamo, Wei Du, Shui-Qing Yu","doi":"10.1063/5.0280475","DOIUrl":"https://doi.org/10.1063/5.0280475","url":null,"abstract":"SiGeSn-based optoelectronic devices, which operate across a broad infrared wavelength range, have garnered significant attention. Among these, heterostructures incorporating quantum wells are particularly promising due to their enhanced carrier confinement. In such structures, the type of band alignment and the associated barrier heights are critical parameters, directly influencing device performance. In this work, we employ internal photoemission measurements to extract the effective barrier heights in a Si0.024Ge0.892Sn0.084/Ge0.882Sn0.118 single quantum well, which is pseudomorphically grown on a Ge0.9Sn0.1 buffer atop a Ge buffered Si substrate. The extracted effective barrier heights are approximately 22 ± 2 meV for electrons and 50 ± 2 meV for holes. Additionally, based on the IPE threshold energy of 555 ± 1 meV, we have experimentally identified a type-I band alignment between the GeSn well and SiGeSn barrier layers—an important finding for the design of efficient infrared photonic devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"83 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144670091","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Tao Cheng, Huanhuan Zhao, Li Lin, Mingyi Ma, Linhua Liu, Jia-Yue Yang
{"title":"Enhanced in-plane thermal conductivity of polar SrTiO3 by surface phonon polaritons within dual Reststrahlen band","authors":"Tao Cheng, Huanhuan Zhao, Li Lin, Mingyi Ma, Linhua Liu, Jia-Yue Yang","doi":"10.1063/5.0280414","DOIUrl":"https://doi.org/10.1063/5.0280414","url":null,"abstract":"As device miniaturization advances, efficient nanoscale heat dissipation becomes increasingly critical. Surface phonon polaritons (SPhPs) offer fast, long-range channels for thermal transport. Dual Reststrahlen band materials such as SrTiO3 provide a broader SPhPs-supporting frequency range (Δω) and greater potential for enhancing SPhPs-mediated thermal conductivity (κ), yet their underlying mechanisms remain elusive. Herein, we analytically solve the SPhPs dispersion relations to investigate the influence of dual Reststrahlen bands on κ of SrTiO3, considering the effects of dielectric asymmetry (Δε) between the top and bottom surfaces of the membrane, temperature, and doping. We find that the low-frequency Reststrahlen band contributes more than two orders of magnitude higher κ than that outside the bands. Moreover, elevated temperatures and heavy doping reduce κ due to increased optical losses and diminished lattice polarization, particularly within the low-frequency Reststrahlen band. These findings complement the current understanding of SPhPs-mediated heat transport and suggest an alternative strategy for thermal management in nanoscale systems.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"675 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144670109","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. D. L. McKenna, B. Shrestha, E. Lu, H. Lott, I. Subedi, X. Chen, S. Hwang, D. Zakharov, N. J. Podraza, J. C. Yang, R. S. Goldman
{"title":"Formation and optical properties of indium nanoparticle arrays for deep-UV plasmonics","authors":"H. D. L. McKenna, B. Shrestha, E. Lu, H. Lott, I. Subedi, X. Chen, S. Hwang, D. Zakharov, N. J. Podraza, J. C. Yang, R. S. Goldman","doi":"10.1063/5.0271244","DOIUrl":"https://doi.org/10.1063/5.0271244","url":null,"abstract":"We utilize a combined computational-experimental approach to examine the influence of indium nanoparticle (NP) array distributions on deep-ultraviolet (UV) plasmon resonances. For photon energies < 5.7 eV, analysis of ellipsometric spectra reveals an increase in silicon reflectance induced by indium NP arrays on silicon. For various energies in the range 5.7–7.0 eV, a decrease in reflectance is induced by the NP arrays. Similar trends in reflectance are predicted from finite-difference time-domain (FDTD) simulations using NP size distributions extracted from atomic-force micrographs as input. In addition, in the energy range of 7.4–9.2 eV, the FDTD simulations reveal reflectance minima, characteristic of localized surface plasmon resonances. Electron energy-loss spectroscopy collected from individual indium NPs reveals the presence of LSPR at ≈ 8 eV, further supporting the promise of indium NP arrays on silicon for deep-UV plasmonics.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"13 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144670133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}