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Unidirectional edge spin waves induced by spin-momentum locking of elastic waves in magnetic waveguides 磁波导中弹性波自旋动量锁定诱导的单向边缘自旋波
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2026-05-20 DOI: 10.1063/5.0324981
Yuping Yao, Xiling Li, Guozhi Chai
{"title":"Unidirectional edge spin waves induced by spin-momentum locking of elastic waves in magnetic waveguides","authors":"Yuping Yao, Xiling Li, Guozhi Chai","doi":"10.1063/5.0324981","DOIUrl":"https://doi.org/10.1063/5.0324981","url":null,"abstract":"We study the control of edge magnons in magnetic waveguides by chiral elastic waves. Micromagnetic simulations show that chiral elastic waves can drive edge magnons to propagate unidirectionally. This effect depends on the spin-momentum locking of the elastic waves, enabling edge magnons to be precisely driven to propagate unidirectionally through selective excitation of elastic waves with specific spin angular momentum. This approach enables unidirectional propagation of edge magnons in magnetic waveguides and has potential applications in the spin-wave device design.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"19 5 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148287825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Recoverable ultrathin Hf0.5Zr0.5O2-based ferroelectric tunnel junction 可回收超薄hf0.5 zr0.5 o2基铁电隧道结
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2026-05-19 DOI: 10.1063/5.0313762
Jingchao Xiao, Huiping Wang, Wei Liu, Wei Zhang, Yubao Li
{"title":"Recoverable ultrathin Hf0.5Zr0.5O2-based ferroelectric tunnel junction","authors":"Jingchao Xiao, Huiping Wang, Wei Liu, Wei Zhang, Yubao Li","doi":"10.1063/5.0313762","DOIUrl":"https://doi.org/10.1063/5.0313762","url":null,"abstract":"Here, we report a ferroelectric tunnel junction (FTJ) based on ultrathin Hf0.5Zr0.5O2 (HZO) that can be electrically recovered from memory fatigue to reach significantly prolongated endurance. A high remanent polarization (Pr) of 19 μC/cm2 is obtained in 3 nm-thick HZO ferroelectric films, and its robust ferroelectricity can be recovered by employing a unipolar negative voltage recovery pulse technique, leading to significantly-prolongated endurance up to 3.7 × 109 cycles and 4.53 × 1010 cycles under bipolar square-waveform field cycling at 105 and 106 Hz, respectively. The fabricated W/WOx/HZO/Pt FTJs exhibited giant tunnel electroresistance ratios of up to 5.8 × 105, attributable to the superb HZO ferroelectrics and the incorporation of sputtered highly conductive WOx interfacial layer. By implementing a similar single-pulse recovery to release the pinned oxygen vacancy defects from the interfaces, the FTJs delivered superior cycling endurance of 108 cycles with a large memory window over 13 000 under 10 ns single-pulse programming, demonstrating the great potential of ultrathin HZO based FTJs as a promising nonvolatile memory. This work would foresee a bright future and pave the way for the practical applications of ultrathin HZO-based FTJ memory.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"29 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148286915","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Melt front visualization and flow prediction in dynamic phase change materials on finned heat sinks 翅片散热器上动态相变材料的熔体前沿可视化与流动预测
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2026-05-19 DOI: 10.1063/5.0315236
Robert A. Stavins, Doron Sahray, Kelly Chicas, Bertug Celebi, Gennady Ziskind, Nenad Miljkovic, William P. King
{"title":"Melt front visualization and flow prediction in dynamic phase change materials on finned heat sinks","authors":"Robert A. Stavins, Doron Sahray, Kelly Chicas, Bertug Celebi, Gennady Ziskind, Nenad Miljkovic, William P. King","doi":"10.1063/5.0315236","DOIUrl":"https://doi.org/10.1063/5.0315236","url":null,"abstract":"Dynamic phase change materials (dynPCMs) offer high heat transfer rates over extended times due to a force applied to the PCM that pumps away melted liquid and maintains a thin melt layer. The melt layer dynamics governs the system behavior; however, little is known about how the melt layer forms and flows, especially when the heat source has a complex three-dimensional shape. This study investigates heat transfer and fluid flow during dynPCM cooling of heated finned copper heat sinks. Melt flow is visualized using computer vision, and these results are coupled with thermal measurements and simulations to gain a fundamental understanding of the flow physics. By measuring the shape of the liquid–solid interface, we resolve the coupling between the heat transfer and melt flow. Four extended surface designs are investigated consisting of fins with varying tip shapes and spacings. Experiments show a reduction in thermal resistance up to 36% with sharp-tip fins compared with rectangular fins, with the thinnest melt layer forming at the fin tips. Using experimental observations as inputs, a three-dimensional simulation investigates heat transfer and fluid flow in the liquid PCM. Simulations show that liquid drainage is a key limitation to dynPCM performance and that the melt layer is thinnest in the center of the heat sink, growing as the melted PCM flows out. The results demonstrate that dynPCM heat transfer is governed by the interplay of surface area, fin geometry, and liquid drainage. The outcomes presented here may be used to design higher-performing dynPCM systems.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"128 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148286945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
FM and double modulation interferometry with sub-nanometer resolution using the iLens technique 利用iLens技术实现亚纳米分辨率的调频和双调制干涉测量
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2026-05-19 DOI: 10.1063/5.0326925
Philipp Ramming, Anna Köhler, Lothar Kador
{"title":"FM and double modulation interferometry with sub-nanometer resolution using the iLens technique","authors":"Philipp Ramming, Anna Köhler, Lothar Kador","doi":"10.1063/5.0326925","DOIUrl":"https://doi.org/10.1063/5.0326925","url":null,"abstract":"We report a modulation technique applicable to optical two-beam interferometers with unequal arm lengths that allows for highly precise, low-noise displacement measurements below the nanometer regime with a compact optical layout. The technique is inspired by frequency modulation spectroscopy and employs an external electro-optic modulator with sinusoidally phase-modulated laser light in the radio frequency (RF) regime (megahertz frequencies). By combining the RF modulation with a secondary mechanical modulation at a lower frequency to a super-heterodyne scheme we achieve continuous sign-resolved tracking of the arm length difference over many wavelengths, and low-frequency laser noise is effectively suppressed. Our setup is based on the compact interference lens technique and can measure displacements of samples with a wide variety of surface qualities. We examined the system performance using two samples, a mirror surface, and a commercial aneroid capsule without specular reflectivity. Stable multi-fringe operation with sub-nanometer resolution is demonstrated; the noise floor reaches 10 pm/Hz at frequencies above 10 Hz in a regular laboratory environment. This work demonstrates a versatile, simple setup capable of sign-resolved, sub-nanometer displacement sensing suitable even for non-ideal surface conditions.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"26 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148286933","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Field-free SOT switching in Pd/PdCo bilayers with a vertical gradient induced by rapid thermal annealing 快速热退火诱导垂直梯度Pd/PdCo双分子层无场SOT开关
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2026-05-19 DOI: 10.1063/5.0311590
Wentao Jin, Yuchen Tu, Yuze Xie, Zhijian Shen, Haifeng Bu, Yue Zhang, Zhizhong Zhang, Shengchun Shen, Yuewei Yin, Xiaoguang Li
{"title":"Field-free SOT switching in Pd/PdCo bilayers with a vertical gradient induced by rapid thermal annealing","authors":"Wentao Jin, Yuchen Tu, Yuze Xie, Zhijian Shen, Haifeng Bu, Yue Zhang, Zhizhong Zhang, Shengchun Shen, Yuewei Yin, Xiaoguang Li","doi":"10.1063/5.0311590","DOIUrl":"https://doi.org/10.1063/5.0311590","url":null,"abstract":"Achieving field-free magnetization switching in spin–orbit torque (SOT) devices is essential for practical spintronic applications. While recent studies have proposed strategies involving complex multilayer structures or substrate symmetry engineering, which often necessitates high substrate temperatures during deposition, thereby limiting large-scale integration. Here, we demonstrate a simple and complementary metal–oxide–semiconductor (CMOS)-compatible approach to achieve current-induced field-free SOT switching in Pd/PdCo bilayers deposited at room temperature and subsequently processed via rapid thermal annealing (RTA). We show that field-free SOT switching is robust across different substrates (Al2O3 and SiO2/Si) and is independent of the in-plane crystalline symmetry associated with the substrates. Systematic investigations reveal that the RTA-induced vertical composition gradient, coupled with gradient-induced Dzyaloshinskii–Moriya interaction, enables the observed field-free switching of magnetization. Furthermore, we clarify how annealing temperature, Co/Pd ratio, and Pd/PdCo bilayer stacking configuration influence the switching behavior. Our study establishes a viable strategy for field-free SOT switching with great CMOS compatibility, offering a promising path toward energy-efficient spintronic devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"24 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148286932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Hofstadter butterfly and quantum transport benchmarks in PVA-exfoliated graphene heterostructures 聚乙烯醇剥离石墨烯异质结构中的霍夫施塔特蝴蝶和量子输运基准
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2026-05-19 DOI: 10.1063/5.0312572
Zihan Zhang, Suji Park, Moeid Jamalzadeh, Kevin G. Yager, Takashi Taniguchi, Kenji Watanabe, Pilkyung Moon, Zhujun Huang, Davood Shahrjerdi
{"title":"Hofstadter butterfly and quantum transport benchmarks in PVA-exfoliated graphene heterostructures","authors":"Zihan Zhang, Suji Park, Moeid Jamalzadeh, Kevin G. Yager, Takashi Taniguchi, Kenji Watanabe, Pilkyung Moon, Zhujun Huang, Davood Shahrjerdi","doi":"10.1063/5.0312572","DOIUrl":"https://doi.org/10.1063/5.0312572","url":null,"abstract":"Polymer exposure during van der Waals heterostructure fabrication is widely regarded as compromising the integrity of the electronic system required for hosting emergent quantum physics. This assumption has persisted largely because electronic benchmarking of heterostructures from polymer-exposed graphene has remained limited to only foundational transport metrics, such as mobility and charge inhomogeneity. Here, we challenge this assumption by establishing that graphene heterostructures produced by polyvinyl alcohol (PVA)-assisted exfoliation and encapsulated in hexagonal boron nitride using elevated-temperature lamination satisfy demanding quantum transport benchmarks. Beyond exhibiting ultra-high mobility and ballistic transport, these heterostructures yield quantum scattering times comparable to the best polymer-free devices. Most demanding of all, moiré superlattices from PVA-exposed graphene exhibit Hofstadter butterfly spectra, confirming spatially uniform interlayer coupling across the device area. These results establish that PVA exposure is compatible with low-disorder electronic systems, relaxing the trade-off between scalable fabrication and low-disorder quantum transport. This study motivates further development of polymer-assisted assembly with engineered residue-removal protocols.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"158 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148286935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Theoretical study on image encryption based on near-field thermal radiation of many-body systems 基于多体系统近场热辐射的图像加密理论研究
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2026-05-19 DOI: 10.1063/5.0330623
Ting-Shuo Yao, Jun-Yang Sui, Hai-Feng Zhang
{"title":"Theoretical study on image encryption based on near-field thermal radiation of many-body systems","authors":"Ting-Shuo Yao, Jun-Yang Sui, Hai-Feng Zhang","doi":"10.1063/5.0330623","DOIUrl":"https://doi.org/10.1063/5.0330623","url":null,"abstract":"Under the escalating challenges in information security, encryption technology has become a core defensive measure, yet single digital encryption still faces interception and decryption risks, driving the development of hybrid encryption combining physical mechanisms with digital algorithms. Near-field thermal radiation exhibits high sensitivity to parameters such as materials and distance at the sub-wavelength scales, which provides the possibility of constructing high-security, electromagnetic-interference-resistant physical encryption systems. In this Letter, a near-field thermal radiation modulator is presented based on a vanadium dioxide/graphene emitter and graphene/silicon carbide receiver photonic heterostructure, thereby filling the research gap in the transient analysis of many-body near-field thermal radiation. A key space is established by tuning the emitter temperature, gap distance, and graphene Fermi level. At the algorithmic level, image scrambling and diffusion are achieved by combining a convolutional neural network with chaotic systems. Analysis demonstrates that the proposed encryption system exhibits excellent performance in pixel distribution, correlation, information entropy, and resistance to differential attacks, providing a novel technical pathway for high-security image encryption.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"340 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148286941","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Long-period wurtzite/zinc-blende GaN polytypes as one-dimensional alloys: Impacts of stacking disorder on electronic structure and optical transitions 长周期纤锌矿/锌-闪锌矿GaN多型一维合金:堆叠无序对电子结构和光学跃迁的影响
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2026-05-19 DOI: 10.1063/5.0324665
Anh-Luan Phan, Matthias Auf der Maur
{"title":"Long-period wurtzite/zinc-blende GaN polytypes as one-dimensional alloys: Impacts of stacking disorder on electronic structure and optical transitions","authors":"Anh-Luan Phan, Matthias Auf der Maur","doi":"10.1063/5.0324665","DOIUrl":"https://doi.org/10.1063/5.0324665","url":null,"abstract":"The electronic structure of wurtzite/zinc-blende GaN polytypes is investigated by treating the stacking sequences of hexagonal and cubic bilayers as one-dimensional pseudo-binary alloys. Using an advanced atomistic empirical tight-binding scheme that is polytype-transferable, we analyze the impact of stacking disorder, namely short-range order, and internal electric polarization on the bandgap, the carrier localization, and the optical transitions. It is pointed out that simple Ising-type models fail to capture the electronic structure of long-period polytypes due to their inability to account for quantum confinement and polarization-induced Stark effects. We also reveal that clustering of cubic or hexagonal bilayers significantly reduces the bandgap, enhances carrier localization, and decreases the optical transitions, an effect dramatically amplified by the internal polarization fields in the insulating regime. These results suggest that stacking disorder in GaN polytypes is not merely a defect but can be viewed as a potentially tunable degree of freedom, behaving analogously to compositional fluctuations in conventional chemical alloys.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"13 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148286942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optimized spectral purity of unfiltered photons via pump and nonlinearity shaping 通过泵浦和非线性整形优化了未过滤光子的光谱纯度
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2026-05-19 DOI: 10.1063/5.0315044
Tommaso Faleo, Christopher L. Morrison, Roméo Beignon, Francesco Graffitti, Vikas Remesh, Stefan Frick, Alessandro Fedrizzi, Gregor Weihs, Robert Keil
{"title":"Optimized spectral purity of unfiltered photons via pump and nonlinearity shaping","authors":"Tommaso Faleo, Christopher L. Morrison, Roméo Beignon, Francesco Graffitti, Vikas Remesh, Stefan Frick, Alessandro Fedrizzi, Gregor Weihs, Robert Keil","doi":"10.1063/5.0315044","DOIUrl":"https://doi.org/10.1063/5.0315044","url":null,"abstract":"Photonic quantum technologies rely on the efficient generation and interference of indistinguishable photons. Exceptional achievements in this respect have been obtained by domain engineering of quasi-phase-matched parametric downconversion sources, demonstrating high two-photon interference visibility using only moderate bandpass spectral filtering. Here, we optimized the spectral purity and indistinguishability of photons from telecom-wavelength sources by combining Gaussian quasi-phase matching with Gaussian pump spectral shaping. Without spectral filtering, we used time-of-flight spectrometry to estimate an upper bound spectral purity of 99.9272(6)%, and achieved visibilities of up to 98.5(8)% in two-photon interference experiments with independent sources.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"138 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148286936","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Realization of insulating buffer layers via MOCVD-grown, nitrogen-doped (010) β-Ga2O3 通过mocvd生长、氮掺杂(010)β-Ga2O3实现绝缘缓冲层
IF 4 2区 物理与天体物理
Applied Physics Letters Pub Date : 2026-05-19 DOI: 10.1063/5.0319100
Rachel Kahler, Carl Peterson, Sriram Krishnamoorthy
{"title":"Realization of insulating buffer layers via MOCVD-grown, nitrogen-doped (010) β-Ga2O3","authors":"Rachel Kahler, Carl Peterson, Sriram Krishnamoorthy","doi":"10.1063/5.0319100","DOIUrl":"https://doi.org/10.1063/5.0319100","url":null,"abstract":"We present metalorganic chemical vapor deposition-grown, nitrogen-doped β-Ga2O3 films as an insulating buffer layer on Fe-doped (010) β-Ga2O3 substrates in lieu of a 49% HF treatment to remove unintentional silicon at the substrate–epitaxial layer growth interface. N-doped layer thickness and NH3/N2 flow were systematically varied to experimentally determine the lowest nitrogen concentration and thickness of the buffer layer needed to fully compensate the interfacial silicon peak. The NH3/N2 flow rate was varied from 200 to 1800 sccm. Results showed fully insulating N-doped layers for samples with NH3/N2 flow rates ≥1200 sccm and a thickness of 50 nm. This study demonstrates the efficacy of in situ, controllably doped nitrogen buffer layers as a mitigation method for unintentional interfacial silicon at the substrate–epitaxial layer growth interface.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"434 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148286938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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