Applied Physics Letters最新文献_第5页

Flux-tunable transmon with an Al/AlO x /4Hb-TaS2 Josephson junction 具有Al/AlO x /4Hb-TaS2约瑟夫森结的磁通可调发射机

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-12 DOI: 10.1063/5.0352556

Eliya Blumenthal,Ilay Mangel,Amit Kanigel,Shay Hacohen-Gourgy

{"title":"Flux-tunable transmon with an Al/AlO\u0000 x\u0000 /4Hb-TaS2 Josephson junction","authors":"Eliya Blumenthal,Ilay Mangel,Amit Kanigel,Shay Hacohen-Gourgy","doi":"10.1063/5.0352556","DOIUrl":"https://doi.org/10.1063/5.0352556","url":null,"abstract":"Incorporating van der Waals (vdW) superconductors into Josephson elements extends circuit-QED beyond conventional Al/AlOx/Al junctions, enabling microwave probes of unconventional condensates and subgap excitations. We realize a flux-tunable transmon whose nonlinear inductive element is an Al/AlOx/4Hb-TaS2 Josephson junction, with a tunnel barrier formed by full in situ oxidation of ultrathin Al layers on an exfoliated 4Hb-TaS2 flake in a process compatible with standard transmon fabrication. In a three-dimensional copper cavity, the device shows a SQUID-like flux-dependent spectrum that is well reproduced by a dressed transmon–cavity Hamiltonian in the transmon regime. We measure sub-microsecond energy relaxation (T1=0.08–0.69 μs), while Ramsey measurements indicate dephasing faster than our 16 ns resolution. A naive Ambegaokar–Baratoff comparison using room-temperature junction resistances gives a suppressed effective energy scale; however, cross-sectional TEM reveals an amorphous region at the TaS2 interface, most likely produced by the pre-deposition ion-milling step. We therefore attribute the suppressed EJRn product primarily to a non-ideal hybrid interface. This work demonstrates the integration of 4Hb-TaS2 into a circuit-QED device and establishes an interface-optimization baseline for future edge-sensitive designs targeting boundary and subgap degrees of freedom in vdW superconductors.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"11 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149208707","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Probing quantum defect states in Zr-doped homoepitaxial AlN 探测zr掺杂同外延AlN的量子缺陷态

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-05 DOI: 10.1063/5.0354170

T. Njuguna,H. Alwan,J. Li,J. Y. Lin,H. X. Jiang

{"title":"Probing quantum defect states in Zr-doped homoepitaxial AlN","authors":"T. Njuguna,H. Alwan,J. Li,J. Y. Lin,H. X. Jiang","doi":"10.1063/5.0354170","DOIUrl":"https://doi.org/10.1063/5.0354170","url":null,"abstract":"The neutral defect complex comprising zirconium substituting onto the Al sublattice (ZrAl) and an adjacent nitrogen vacancy (VN), (ZrAl−VN)0, in aluminum nitride (AlN) crystals is theoretically predicted to host unique spin states suitable for quantum manipulation. Here, we report experimental observations of both intradefect and band-to-impurity optical transitions involving (ZrAl− VN)0 in AlN. This defect was realized via in situ doping of Zr into AlN homoepitaxial layers grown by metalorganic chemical vapor deposition. Below-bandgap excitation at λexc = 260 nm resolved emission peaks at 1.89, 2.11, and 3.52 eV, in excellent agreement with those predicted by first-principles calculations for the intradefect and band-to-impurity type of transitions involving (ZrAl− VN)0, providing experimental validation of the defect's electronic structure. Temperature-dependent PL further demonstrates that the (ZrAl− VN)0 state maintains a stable optical emission up to room temperature, with a high thermal activation energy of 48 meV, indicative of thermal robustness against nonradiative quenching. While further spin-based measurements are needed to assess coherence and manipulation limits, experimental and theoretical findings validate Zr-doped AlN as a promising platform for the realization of room-temperature quantum defect devices, including solid-state qubits and integrated quantum photonic technologies.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"37 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149089837","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Experimental study of Kohn anomalies and phonon dispersion in graphene using Raman spectroscopy 用拉曼光谱研究石墨烯中的Kohn异常和声子色散

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-05 DOI: 10.1063/5.0351087

Nahum Shabi,Olga Girshevitz,Daniel Primetzhofer,Moshe Kaveh,Issai Shlimak

{"title":"Experimental study of Kohn anomalies and phonon dispersion in graphene using Raman spectroscopy","authors":"Nahum Shabi,Olga Girshevitz,Daniel Primetzhofer,Moshe Kaveh,Issai Shlimak","doi":"10.1063/5.0351087","DOIUrl":"https://doi.org/10.1063/5.0351087","url":null,"abstract":"The phenomenon of Kohn anomalies (KA) in graphene is characterized by a linear phonon dispersion law at the Γ and K points of the first Brillouin zone. Until now, experimental confirmation of the KA has been based on the observation of phonon softening during inelastic x-ray scattering measurements, and quantitative extraction of the dispersion parameters using optical benchtop techniques remains a critical challenge. Here, we determine the numerical value of the linear dispersion coefficient for the first time through an analysis of Raman-line broadening in ion-irradiated graphene. We demonstrate that in the dilute defect regime, the Raman linewidth evolution is governed by rigorous phonon spatial confinement, wherein point defects act as absolute phase-breaking scatterers. Furthermore, the broadening slope remains independent of the mass and energy of the irradiating ions, confirming that this phenomenon is an intrinsic property of the graphene lattice. For the G-band, the broadening is primarily determined by the KA at the Γ-point of the Brillouin zone center. By deriving and applying a closed-form non-linear Voigt profile correlation, we extract a linear dispersion coefficient of 403.5 cm−1, demonstrating remarkable quantitative agreement with the Density Functional Theory predictions (397 cm−1). This methodology establishes Raman linewidth analysis as a highly accurate approach for probing electron–phonon interaction parameters in two-dimensional materials.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"2 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149089841","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Nearly isotropic magnon transport in epitaxial lithium aluminum ferrite thin films 外延锂铝铁氧体薄膜的近各向同性磁振子输运

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-05 DOI: 10.1063/5.0341020

Yiming Li,Katya Mikhailova,Lerato Takana,Daisy O'Mahoney,Sauviz P. Alaei,Guanxiong Qu,Dominic Petruzzi,Samuel Crossley,Harold Y. Hwang,Ian R. Fisher,Clare C. Yu,Yuri Suzuki

引用次数: 0

Orientation-dependent interface-state properties underlying the “V”-shaped difference in temperature-dependent reverse characteristics of [010]- and [100]-oriented trench-MOSSBDs [010]和[100]取向海沟- mossbd的温度依赖反向特性的“V”形差异背后的取向依赖界面状态属性

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-05 DOI: 10.1063/5.0344720

Yitong Yang,Danning Tang,Yuan Li,Kai Peng,Shali Wang,Yunlong He,Xiaoli Lu,Xiaohua Ma,Yuanfu Zhao,Yue Hao

{"title":"Orientation-dependent interface-state properties underlying the “V”-shaped difference in temperature-dependent reverse characteristics of [010]- and [100]-oriented trench-MOSSBDs","authors":"Yitong Yang,Danning Tang,Yuan Li,Kai Peng,Shali Wang,Yunlong He,Xiaoli Lu,Xiaohua Ma,Yuanfu Zhao,Yue Hao","doi":"10.1063/5.0344720","DOIUrl":"https://doi.org/10.1063/5.0344720","url":null,"abstract":"In β-Ga2O3 MOS-type trench diodes, electro-thermal performance is strongly limited by poor trench-sidewall interface quality induced by anisotropic dry etching. This issue is more pronounced in [100]-oriented trenches, which exhibit higher sidewall thermal conductivity than [010]-oriented trenches. However, the orientation-dependent impact of interface states on device reliability and the underlying physical mechanisms remain unclear. This work elucidates, for the first time, the orientation-dependent interface-state properties responsible for the distinctive “V”-shaped temperature dependence of the reverse I–V characteristics between [010]- and [100]-oriented β-Ga2O3 trench MOS-type Schottky barrier diodes (trench-MOSSBDs) with HfO2 dielectric. Within the low-temperature range (25–125 °C), the “V”-shaped behavior in [100]-oriented trench-MOSSBD originates from the temperature-dependent competition between slow and fast interface-state charge trapping/de-trapping processes, whereas the reverse characteristics of [010]-oriented trench-MOSSBDs are predominantly governed by fast interface states. These findings provide important physical insights into interface-state engineering in anisotropic β-Ga2O3 trench structures and offer guidance for the electro-thermal co-design of high-performance β-Ga2O3 trench power devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"53 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149089897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High peak-current AlGaAs tunnel junctions for 10-junction GaAs laser power converters 用于10结GaAs激光功率变换器的高峰值电流AlGaAs隧道结

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-05 DOI: 10.1063/5.0351907

Yudan Gou,Jiaxin Chen,Di Feng,Jun Wang,Yuting Zhang,Yao Xiao,Quanling Li,Shujuan Sun,Yong Tian,Yang Cheng,Hao Zhou,Hao Zhang,Guoliang Deng

{"title":"High peak-current AlGaAs tunnel junctions for 10-junction GaAs laser power converters","authors":"Yudan Gou,Jiaxin Chen,Di Feng,Jun Wang,Yuting Zhang,Yao Xiao,Quanling Li,Shujuan Sun,Yong Tian,Yang Cheng,Hao Zhou,Hao Zhang,Guoliang Deng","doi":"10.1063/5.0351907","DOIUrl":"https://doi.org/10.1063/5.0351907","url":null,"abstract":"Laser power converters (LPCs) are the core photovoltaic devices that act as receivers in optical wireless power transmission systems. In these devices, tunnel junctions (TJs) are employed to vertically interconnect multiple absorption sub-cells in series to construct high-voltage multi-junction LPCs. This work systematically investigates the effects of the Al composition, growth temperature, and doping levels on the performance of AlxGa(1−x)As TJs. Furthermore, the performance of TJs employing different doping schemes (conventional doping, Si + Te co-doping, and delta-doping) and structural designs [quantum well (QW) insertion] was evaluated. For samples with Al compositions of 0%, 7%, 22%, and 28%, the maximum peak tunneling current densities reached 31.0k, 20.3k, 4.8k, and 0.5k A/cm2, respectively, while the lowest tunneling resistivities achieved 1.17 × 10−5, 1.08 × 10−5, 1.89 × 10−5, and 1.39 × 10−4 Ω cm2, respectively. The optimized Al0.28Ga0.72As TJ, featuring a hybrid structure of Si + Te delta-doping and QW insertion, exhibited a peak tunneling current density of 14.6k A/cm2 in the as-grown state and maintained 1.1k A/cm2 after annealing. By applying this TJ structure to a 10-junction GaAs LPC, a photovoltaic conversion efficiency exceeding 60% was achieved.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"86 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149089952","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Terahertz transmissive quarter-wave plate based on free-standing T-shaped metasurface 基于独立t形超表面的太赫兹透射四分之一波片

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-05 DOI: 10.1063/5.0355903

Oleg Kameshkov,Vladlen Shvedov,Yana Izdebskaya,Andrei Lavrinenko,Ilya Shadrivov

引用次数: 0

Electrode-dependent memristive mechanism of two-dimensional EA4Pb3Br10 perovskite memristors 二维EA4Pb3Br10钙钛矿忆阻器电极依赖的忆阻机理

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-05 DOI: 10.1063/5.0324995

Zheng Rong,Junming Xu,Jie Jiang,Liang Chu

{"title":"Electrode-dependent memristive mechanism of two-dimensional EA4Pb3Br10 perovskite memristors","authors":"Zheng Rong,Junming Xu,Jie Jiang,Liang Chu","doi":"10.1063/5.0324995","DOIUrl":"https://doi.org/10.1063/5.0324995","url":null,"abstract":"Halide perovskite memristors have become promising candidates for neuromorphic computing due to their intrinsic ion migration, tunable optoelectronic properties, and simple solution processing. Herein, we construct two-dimensional EA4Pb3Br10 perovskite memristors and evaluate the electrode effect of Au, and Ag electrodes with and without PMMA buffer layer on the resistive switching (RS) characteristics. The device with an active Ag electrode exhibits nonvolatile RS behavior, originating from the formation and rupture of Ag conductive filaments. In contrast, the inert-Au-electrode device shows volatile unipolar memristive characteristics assisted by halogen vacancies, while the insertion of a PMMA buffer layer under Ag electrode degrades memristive performance. Through experiment and first-principle calculation, we confirm that the chemical reaction between Ag and Br− in the perovskite and the Ag+ ion migration are the mechanisms underlying the RS. Moreover, the Ag electrode devices possesses reasonable endurance, continuously tunable conductance states, and synaptic characteristics, such as long-term potentiation/depression and paired-pulse facilitation. When integrated into an artificial neural network for image recognition simulation, the device achieves a high recognition accuracy of 95%. This work elucidates the electrode-dependent RS mechanism in halide perovskite memristors, offering critical insights into interfacial ion migration and electrochemical dynamics.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"14 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149150138","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Topotactic lattice healing: A post-growth strategy for eliminating persistent oxygen vacancies in La0.67Sr0.33MnO3 films 拓扑晶格愈合：一种消除La0.67Sr0.33MnO3薄膜中持续氧空位的生长后策略

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-05 DOI: 10.1063/5.0351876

Shuyi Sun,Yuying Yuan,Lijun Zhao,Yanyan Ma,Gaohui Ni,Hao Ni

{"title":"Topotactic lattice healing: A post-growth strategy for eliminating persistent oxygen vacancies in La0.67Sr0.33MnO3 films","authors":"Shuyi Sun,Yuying Yuan,Lijun Zhao,Yanyan Ma,Gaohui Ni,Hao Ni","doi":"10.1063/5.0351876","DOIUrl":"https://doi.org/10.1063/5.0351876","url":null,"abstract":"Oxygen vacancies in complex oxide films often obscure intrinsic physics and degrade functional performance. Here, we report a post-growth defect-healing strategy via sequential vacuum/oxygen annealing. This process drives a reversible perovskite–brownmillerite topotactic phase transition, effectively eliminating persistent oxygen vacancies that survive conventional thermal annealing. Using La0.67Sr0.33MnO3−δ films as a model system, we validate this strategy on both SrTiO3 and LaAlO3 substrates. Following this defect-healing treatment, the lattice parameters converge to their theoretical stoichiometric values, yielding substantially enhanced physical properties: the metal–insulator transition temperature (TMI) approaches its bulk value; the remanent magnetization increases by nearly an order of magnitude; and the saturation magnetization (Ms) more than doubles at room temperature. With the restored stoichiometry, the intrinsic effects of strain can be directly observed without interference from oxygen vacancies. Structurally, the films on SrTiO3 and LaAlO3 exhibit distinct strain-relaxation behaviors—spatially distributed vs interface-confined relaxation. In transport, TMI exhibits a weaker dependence on substrate strain than in the conventionally annealed states. Moreover, the magnetic and transport responses exhibit opposite substrate dependences: TMI and conductivity are lower on LaAlO3 than on SrTiO3, whereas the room-temperature Ms is higher, pointing to distinct microscopic channels of strain control. These results demonstrate that this topotactic phase transition strategy provides clean material platforms for developing high-quality oxide devices and exploring intrinsic strain physics in perovskite oxides.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"24 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149089839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Formation of LiFN2 with puckered LiF layers via nitrogen intercalation under high pressure 高压下氮插层形成皱褶状的LiFN2

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-05 DOI: 10.1063/5.0355847

Ping Ning,Tongtong Yang,Wenhao Di,Yinqi Chen,Lv Yan,Chenxi Li,Hongbo Wang,Guangtao Liu,Mi Zhou

{"title":"Formation of LiFN2 with puckered LiF layers via nitrogen intercalation under high pressure","authors":"Ping Ning,Tongtong Yang,Wenhao Di,Yinqi Chen,Lv Yan,Chenxi Li,Hongbo Wang,Guangtao Liu,Mi Zhou","doi":"10.1063/5.0355847","DOIUrl":"https://doi.org/10.1063/5.0355847","url":null,"abstract":"The incorporation of molecular guests into ionic frameworks under pressure can produce host–guest structures inaccessible under ambient conditions. Here, we report the synthesis of an intercalated compound, LiFN2, at 105 GPa and 2100 K using the laser-heated diamond anvil cell technique. In situ synchrotron x-ray diffraction and Raman spectroscopy, combined with first-principles calculations, reveal that nitrogen intercalation transforms the compact, three-dimensional B1 structure of LiF into a layered architecture. Puckered LiF layers extend parallel to the crystallographic ac plane, with individual LiF layers alternating with single layers of N2 molecules along the b axis. This structural transformation is accompanied by a change in electronic properties: whereas LiF is insulating, LiFN2 is predicted to be an indirect-gap semiconductor with a calculated bandgap of 3.7 eV. These findings demonstrate that a close-packed ionic framework can accommodate molecular guests through substantial structural reorganization under extreme conditions, providing insight into pressure-induced intercalation and the formation of layered host–guest compounds.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"1 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149089883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0