Applied Physics Letters最新文献_第6页

High-order harmonic generation and nonlinear chirality based on accidental bound states in the continuum 基于连续统中偶然束缚态的高次谐波产生和非线性手性

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-15 DOI: 10.1063/5.0276913

Yuan Liu, Junxian Shi, Zhengqi Liu, Shijie Cai, Jing Chen, Xiaoshan Liu, Guiqiang Liu

{"title":"High-order harmonic generation and nonlinear chirality based on accidental bound states in the continuum","authors":"Yuan Liu, Junxian Shi, Zhengqi Liu, Shijie Cai, Jing Chen, Xiaoshan Liu, Guiqiang Liu","doi":"10.1063/5.0276913","DOIUrl":"https://doi.org/10.1063/5.0276913","url":null,"abstract":"Dielectric metasurfaces supporting bound states in the continuum (BICs) exhibit exceptional capabilities for capturing optical fields and are thus widely utilized to enhance light–matter interactions at nanoscales, such as nonlinear optical effects and chiroptic effects. However, it remains a considerable challenge to simultaneously realize significant high-order nonlinear circular dichroism (CD) and strong high-order nonlinear responses. In this work, we theoretically propose high-efficiency third harmonic generation (THG), direct fifth harmonic generation (dFHG), cascaded fifth harmonic generation (cFHG), and corresponding high-order nonlinear chiroptic effects in a Si-based metasurface based on the accidental BICs (A-BICs). Strong THG, dFHG, and cFHG signals, respectively, with high conversion efficiencies of 1.1%, 1.31 × 10−9, and 8.77 × 10−6 are achieved under the fundamental pump intensity of 1 MW/cm2 and the efficiency of dFHG is boosted by three orders of magnitude by the cascaded approach based on the degenerate four-wave mixing. Importantly, the generated FHG signals are located in the deep ultraviolet region with the full width at half maximum less than 0.15 nm, significantly contributing to the development of deep ultraviolet lasers. Furthermore, strong linear CD, THG CD, dFHG CD, and cFHG CD are also achieved with the maximum values approaching 1. Our findings provide a feasible approach for developing high-efficiency high-order nonlinearity and near-perfect high-order chiral nonlinear optical devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"45 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144639703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-performance near-field radiative thermal logic computing 高性能近场辐射热逻辑计算

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-15 DOI: 10.1063/5.0278815

Hexiang Zhang, Xuguang Zhang, Hanqing Liu, Yi Zheng

引用次数: 0

Enhanced physical and chemical binding of MXene/CNT composite and Ni catalytic conversion to boost the performance of Li–S battery 增强MXene/CNT复合材料的物理和化学结合以及Ni催化转化以提高Li-S电池的性能

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-15 DOI: 10.1063/5.0276215

Jia Li, Yaoying Li, Shengfengrui Zhang, Jiawei Xie, Yaoxuan Huang, Zhiping Wu, Peilin Qing, Guangxu Li, Dan Huang, Wenzheng Zhou

{"title":"Enhanced physical and chemical binding of MXene/CNT composite and Ni catalytic conversion to boost the performance of Li–S battery","authors":"Jia Li, Yaoying Li, Shengfengrui Zhang, Jiawei Xie, Yaoxuan Huang, Zhiping Wu, Peilin Qing, Guangxu Li, Dan Huang, Wenzheng Zhou","doi":"10.1063/5.0276215","DOIUrl":"https://doi.org/10.1063/5.0276215","url":null,"abstract":"A unique three-dimensional (3D) porous MXene/CNTs-Ni composite was fabricated as host material for the cathode of lithium–sulfur battery. One-dimensional carbon nanotubes (CNTs) were interspersed with two-dimensional MXene nanosheets to establish a porous network structure for fast charge transfer and efficient active site exposure. Meanwhile, the introduction of catalytically active zero-dimensional nickel oxide can catalyze the creation of more active sites, which can further inhibit the shuttle effect and enhance the redox kinetics. The hosts of MXene/CNTs-Ni with a unique 3D porous structure of point-line-sheet interconnection shape not only improve the sulfur loading and slow down the volume expansion of cathodes but also effectively inhibit the shuttle effect of lithium polysulfides through the synergistic effect of physical confinement and chemical adsorption. Among the composites, the cell with S@MXene/CNT-1Ni as a cathode had an initial discharge specific capacity of 1078.2 mAh g−1 at 0.5 C and a capacity of 470.8 mAh g−1 after 1000 cycles. The capacity decay was as low as 0.056% per cycle. Even with a sulfur loading of 4.0 mg cm−2 and a current of 2.0 C, the S@MXene/CNT-1Ni composite provides a high first-cycle specific capacity of 808.2 mAh g−1 and a capacity of 370.6 mAh g−1 after 300 cycles, with a capacity decay of 0.18% per cycle.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"52 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144639707","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optoelectronic memristive sensor with reconfigurable logic operation capability in ZnO/Nb:SrTiO3 heterojunction 具有可重构逻辑运算能力的ZnO/Nb:SrTiO3异质结光电忆阻传感器

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-15 DOI: 10.1063/5.0275116

Caili Dong, Kaijin Kang, Youhong Wang, Xuefeng Chen, Chuanfu Yang, Wei Hu

{"title":"Optoelectronic memristive sensor with reconfigurable logic operation capability in ZnO/Nb:SrTiO3 heterojunction","authors":"Caili Dong, Kaijin Kang, Youhong Wang, Xuefeng Chen, Chuanfu Yang, Wei Hu","doi":"10.1063/5.0275116","DOIUrl":"https://doi.org/10.1063/5.0275116","url":null,"abstract":"The optoelectronic memristive sensor exhibits unique advantages due to its nonvolatile memory, low power consumption, and dynamic response to light signals. In this work, an interfacial type memristive sensor based on a ZnO/Nb:SrTiO3 heterojunction is fabricated, exhibiting stable resistive switching characteristics, multi-level storage capability, and long retention time. Light sensing measurements indicate that the device shows a self-powered photoresponse behavior and a persistent photoconductive effect upon exposure to 365 nm ultraviolet light. Furthermore, reconfigurable “OR” and “NIMP” logic operations under both light and electrical stimulation are implemented. Temperature dependent analysis of resistance reveals that the charge transport follows the space-charge-limited current mechanism in both high and low resistance states. Consequently, the resistance switching effect and the corresponding photoresponse can be attributed to the migration of oxygen vacancies coupled with electron trapping/de-trapping. This work highlights the potential of the ZnO/Nb:SrTiO3 heterojunction for applications in optoelectronic memristive sensors and programmable logic circuits.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"3 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144639709","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Pressure-induced phase transitions and broadband photoresponse in layered 2D MoO3 层状二维MoO3的压力诱导相变和宽带光响应

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-15 DOI: 10.1063/5.0279580

Kaixiang Liu, Jiankun Tang, Lidong Dai, Yuxue Yang, Wen Liang, Shengyun Luo, Guangcan Luo, Jing Zhang, Qinghong Li, Tengfei Wang, Rongrong Wang, Jialiang Dong, Yong Meng, Guowei Liu

{"title":"Pressure-induced phase transitions and broadband photoresponse in layered 2D MoO3","authors":"Kaixiang Liu, Jiankun Tang, Lidong Dai, Yuxue Yang, Wen Liang, Shengyun Luo, Guangcan Luo, Jing Zhang, Qinghong Li, Tengfei Wang, Rongrong Wang, Jialiang Dong, Yong Meng, Guowei Liu","doi":"10.1063/5.0279580","DOIUrl":"https://doi.org/10.1063/5.0279580","url":null,"abstract":"This work investigates the pressure-dependent structural evolution and optoelectronic behavior of MoO3 under high pressure to 37.8 GPa, combining in situ Raman spectroscopy, x-ray photoelectron spectroscopy, photocurrents, electrical conductivity, and theoretical calculations. Two distinct phase transitions in α-MoO3 were observed: first to the MoO3-II phase at about 10.1 GPa, followed by conversion to the high-pressure MoO3-III phase at about 25.3 GPa. This structural evolution correlated with exceptional optoelectronic enhancement, demonstrating a 434-fold increase in the photocurrent density (from 0.0628 to 29.10 mA cm−2) and the corresponding responsivity (from 1.366 to 632.7 mA W−1) under 365 nm illumination at 37.8 GPa, relative to the corresponding values at 1.2 GPa. These enhancements arise from pressure-induced increases in electrical conductivity, bandgap narrowing, and improved light absorption. Notably, the high-pressure MoO3-II and MoO3-III phases exhibit photodetection extending into the near-infrared band (980 nm). These anomalous phenomena can be attributed to the formation of oxygen vacancies, which introduce in-gap states positioned below the conduction band minimum, thereby facilitating efficient carrier excitation across both visible and infrared spectral regions. The findings highlight high-pressure engineering as an effective approach to optimize the optoelectronic performance of MoO3, advancing its potential utility in photodetector systems.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"9 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144639702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Magnonic memory and logic devices: From proposal to device 磁记忆与逻辑装置：从提案到装置

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-15 DOI: 10.1063/5.0276047

Alexander Khitun

引用次数: 0

Single monolayer ferromagnetic perovskite SrRuO3 with high conductivity and strong ferromagnetism 具有高导电性和强铁磁性的单层铁磁钙钛矿SrRuO3

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-15 DOI: 10.1063/5.0270816

Yuki K. Wakabayashi, Masaki Kobayashi, Yoshiharu Krockenberger, Takahito Takeda, Kohei Yamagami, Hideki Yamamoto, Yoshitaka Taniyasu

引用次数: 0

Theoretical investigation on the phase diagram and electronic and optical properties of two-dimensional strained Si6H6 monolayer 二维应变Si6H6单层的相图及电子光学性质的理论研究

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-15 DOI: 10.1063/5.0273643

Yanxue Zhang, Weiwei Gao, Xiaoran Shi, Hongsheng Liu, Junfeng Gao

引用次数: 0

Enhanced terahertz emission by efficient spin-to-charge conversion in (Bi1−xSbx)2Te3 based heterostructures （Bi1−xSbx）2Te3基异质结构中有效自旋-电荷转换增强太赫兹发射

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-15 DOI: 10.1063/5.0282411

Chenxia Guo, Pengcheng Ji, Jianrong Zhang, Yang Ren, Yujun Zhang, Hong Yan, Shaoyu Yin, Baoshan Cui, Lan Ding, Yalu Zuo, Li Xi

{"title":"Enhanced terahertz emission by efficient spin-to-charge conversion in (Bi1−xSbx)2Te3 based heterostructures","authors":"Chenxia Guo, Pengcheng Ji, Jianrong Zhang, Yang Ren, Yujun Zhang, Hong Yan, Shaoyu Yin, Baoshan Cui, Lan Ding, Yalu Zuo, Li Xi","doi":"10.1063/5.0282411","DOIUrl":"https://doi.org/10.1063/5.0282411","url":null,"abstract":"The enhanced terahertz (THz) emission in the spintronics based emitter is of extreme significance for the realization of THz probing and imaging. The THz emitter based on three-dimensional topological insulators (TIs), (Bi1–xSbx)2Te3 (BST) with spin-momentum-locked Dirac surface states, is expected to exhibit strong THz emission efficiency due to the high spin-to-charge current conversion efficiency. In this study, by tuning the Fermi level close to the Dirac point through adjusting the Sb composition to 0.95, (Bi0.05Sb0.95)2Te3/Co exhibits more pronounced THz pulse emission due to the unique topological surface states. The THz emission could be further enhanced by optimizing the thickness of the BST and Co layers. In addition, by inserting an Au layer between Co and BST, a Rashba-mediated Dirac surface state is formed due to the interaction between the Au film and the topological surface states of BST, which significantly enhances the emission efficiency—reaching 127% of the original signal when the Au thickness is 2 nm. Furthermore, in the BST/Co/Ta heterostructure, THz emission is further boosted due to the combined contributions of the inverse Rashba–Edelstein effect and the inverse spin Hall effect, achieving an intensity of 143% of that in the BST/Co heterostructure. These findings highlight the potential of TI-based heterostructures as high-performance, room-temperature THz sources, with broad applications in ultrafast spectroscopy, imaging, and next-generation communication technologies.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"43 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144639710","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Sc-rich monocrystalline ScGaN grown by MBE exhibits attractive ferroelectric properties MBE生长的富sc单晶ScGaN具有吸引人的铁电性能

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-14 DOI: 10.1063/5.0275515

Samuel Yang, Shubham Mondal, Jae Hun Kim, Zetian Mi

引用次数: 0