Applied Physics Letters最新文献_第6页

High-sensitive and fast-response three-dimensional magnetic sensor based on spin–orbit torque 基于自旋-轨道转矩的高灵敏快速响应三维磁传感器

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-10-01 DOI: 10.1063/5.0290625

Rongxin Li, Xin Li, Xiaoyu Fan, Chengzhang Duan, Shihao Li, Shuai Zhang, Zhe Guo, Long You

{"title":"High-sensitive and fast-response three-dimensional magnetic sensor based on spin–orbit torque","authors":"Rongxin Li, Xin Li, Xiaoyu Fan, Chengzhang Duan, Shihao Li, Shuai Zhang, Zhe Guo, Long You","doi":"10.1063/5.0290625","DOIUrl":"https://doi.org/10.1063/5.0290625","url":null,"abstract":"Spin–orbit torque-based three-dimensional (3D) magnetic sensors have emerged as a prominent research focus due to their potential for high-precision magnetic field detection and high integration density. Despite these advantages, significant challenges remain, including suboptimal performance response time and limitations in sensitivity. In this work, we address these challenges by demonstrating a 3D magnetic field sensor based on a hysteresis-free W/CoFeB/MgO heterostructure. The magnetization of the CoFeB layer rapidly reaches equilibrium upon current application, enabling simultaneous excitation and signal reading through a single 50 μs current pulse. This sensor allows for fast measurements of vectoral magnetic fields while maintaining high spatial resolution. Under an excitation current density of only 0.95 MA/cm2, the sensor demonstrates ultrahigh sensitivity, with values of 1463, 1650, and 4881 V/A/T for the x-, y-, and z-axis magnetic field components respectively. Additionally, the sensor achieves a magnetic noise level as low as 14.7 nT/√Hz at 1 Hz, highlighting its exceptional accuracy.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"1 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145202937","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Rational design of high-conductivity α-Ag2S through first-principles guided dopant screening 通过第一性原理指导掺杂剂筛选合理设计高导电性α-Ag2S

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-10-01 DOI: 10.1063/5.0285517

Shuang Qiu, Ren Wang, Hanyang Ji, Shuhan Tang, Qi Jiang, Guiye Shan, Xiaojie Liu

{"title":"Rational design of high-conductivity α-Ag2S through first-principles guided dopant screening","authors":"Shuang Qiu, Ren Wang, Hanyang Ji, Shuhan Tang, Qi Jiang, Guiye Shan, Xiaojie Liu","doi":"10.1063/5.0285517","DOIUrl":"https://doi.org/10.1063/5.0285517","url":null,"abstract":"Ductile α-Ag2S exhibits poor electrical conductivity owing to its low carrier concentration, which severely limits its large-scale application and development in electronic devices. Metal doping is an effective strategy for enhancing the conductivity of α-Ag2S. Here, 21 metal dopants were incorporated into the α-Ag2S lattice, and their structural stability and electronic conductivity were systematically investigated. Four key screening criteria—formation energy, lattice deformation, bandgap, and carrier concentration—were established to evaluate the dopant′s effects on the conductivity of α-Ag2S. Our findings reveal that Li (interstitial doping) and Mg (substitution doping) are the most promising dopants, significantly improving the conductivity of α-Ag2S due to their high stability, minimal lattice deformation, reduced bandgap, and substantial increase in carrier concentration (up to ∼1020 cm−3). The findings of this study provide critical insights into effective n-type doping strategies for α-Ag2S, facilitating its potential applications in electronic, thermoelectric, and optoelectronic devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"37 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145202938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhancement of spin–orbit torque in sputtered BiSb-based perpendicular magnetic tunnel junctions for neuromorphic computing applications 用于神经形态计算应用的溅射铋基垂直磁隧道结的自旋轨道转矩增强

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-10-01 DOI: 10.1063/5.0275455

S. Wu, G. J. Lim, F. N. Tan, T. L. Jin, C. C. I. Ang, E. K. Koh, S. H. Lee, K. J. Cheng, W. S. Lew

{"title":"Enhancement of spin–orbit torque in sputtered BiSb-based perpendicular magnetic tunnel junctions for neuromorphic computing applications","authors":"S. Wu, G. J. Lim, F. N. Tan, T. L. Jin, C. C. I. Ang, E. K. Koh, S. H. Lee, K. J. Cheng, W. S. Lew","doi":"10.1063/5.0275455","DOIUrl":"https://doi.org/10.1063/5.0275455","url":null,"abstract":"Topological insulators offer unique properties for generating high spin–orbit torque (SOT), promising to revolutionize magnetoresistive random-access memory with a low power consumption. In this work, BiSb is integrated into perpendicular magnetic tunnel junctions (pMTJs) to enable efficient SOT switching. By optimizing the BiSb thickness and introducing a Ta buffer layer, a threefold enhancement in damping-like SOT efficiency and a 60% reduction in switching current are achieved compared to the BiSb-free sample. X-ray diffraction measurements confirm the improved crystalline quality with increasing BiSb thickness, contributing to the enhanced spin current generation. The fabricated BiSb-pMTJs exhibit key neuromorphic functionalities, including gradual long-term potentiation/depression and sigmoidal resistance modulation under pulsed current. Utilizing these features, a three-layer artificial neural network is implemented based on experimentally extracted device behavior, achieving over 90% accuracy in handwritten digit recognition.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"93 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145194989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Selective area regrowth of silane-doped GaN achieving record carrier density for ultra-low resistive Ohmic contacts for AlGaN/GaN HEMT 硅烷掺杂GaN的选择性区域再生，实现了AlGaN/GaN HEMT超低阻欧姆接触的载流子密度记录

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-10-01 DOI: 10.1063/5.0289411

Swarnav Mukhopadhyay, Surjava Sanyal, Ruixin Bai, Brahmani Challa, Chirag Gupta, Shubhra S. Pasayat

{"title":"Selective area regrowth of silane-doped GaN achieving record carrier density for ultra-low resistive Ohmic contacts for AlGaN/GaN HEMT","authors":"Swarnav Mukhopadhyay, Surjava Sanyal, Ruixin Bai, Brahmani Challa, Chirag Gupta, Shubhra S. Pasayat","doi":"10.1063/5.0289411","DOIUrl":"https://doi.org/10.1063/5.0289411","url":null,"abstract":"Low-temperature (LT) selective area growth (SAG) of degenerately silicon (Si) doped GaN by metal-organic-chemical vapor deposition (MOCVD) technique yielded a record-high charge carrier concentration (ns) of 2–2.2 × 1020 cm−3 with a mobility of 116–119 cm2/V s, utilizing triethylgallium and silane (SiH4) as gallium and Si precursors, respectively, and trimethylindium as a surfactant. While SiH4-doped GaN typically yields lower carrier concentrations (≤1020 cm−3) than disilane (Si2H6), this work demonstrates that defect and dislocation suppression enables degenerately doped GaN with ns exceeding 1020 cm−3 using the widely adopted SiH4 precursor. The use of an indium surfactant enhanced both ns and mobility by suppressing defect formation, enhancing 2D-step flow deposition mode compared to 3D island deposition mode in highly Si-doped GaN, enabling ns exceeding 1020 cm−3. SAG of LT-n++-GaN contact layer using SiH4 dopant in an AlGaN/GaN high-electron mobility transistor (HEMT) yielded an ultra-low sheet resistance (RSh) of 22 Ω/□ and a surface roughness of 0.33 nm, resulting in a record low Ohmic contact resistance of 0.065 Ω mm, along with a metal/n++-GaN contact resistance of 0.023 Ω mm, two-dimensional electron-gas-to-n++-GaN contact resistance of 0.025 Ω mm, and an access resistance (Rn+) of 0.017 Ω mm. A scaled AlGaN/GaN HEMT showed ultra-low on resistance (RON) of 0.36 Ω mm and a superior RF performance with current gain cutoff frequency (fT) and maximum oscillation frequency (fmax) of 160 and 195 GHz, respectively. Advancements in LT selective area MOCVD growth of n++-GaN using SiH4 enable regrown contacts in ultra-scaled AlGaN/GaN HEMTs, supporting commercialization for mm-wave applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"101 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145202935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of GdIG interfacial layer on the spin pumping in YIG/Pt GdIG界面层对YIG/Pt自旋泵送的影响

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-10-01 DOI: 10.1063/5.0272074

Wenzhuo Zhuang, Yequan Chen, Wenxuan Sun, Zhongqiang Chen, Xudong Liu, Ruitong Sun, Ruijie Xu, Xu Zhang, Anke Song, Zhihao Li, Xingze Dai, Fusheng Ma, Liang He, Yongbing Xu, Rong Zhang, Xuefeng Wang

引用次数: 0

Temperature dependence of current-induced switching in thin epitaxial films of Mn3Sn: Revealing the dominant role of spin–orbit torque Mn3Sn外延薄膜中电流诱导开关的温度依赖性：揭示自旋轨道转矩的主导作用

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-10-01 DOI: 10.1063/5.0294438

Kota Nihei, Tomohiro Uchimura, Jiahao Han, Katarzyna Gas, Shun Kanai, Hideo Ohno, Shunsuke Fukami

{"title":"Temperature dependence of current-induced switching in thin epitaxial films of Mn3Sn: Revealing the dominant role of spin–orbit torque","authors":"Kota Nihei, Tomohiro Uchimura, Jiahao Han, Katarzyna Gas, Shun Kanai, Hideo Ohno, Shunsuke Fukami","doi":"10.1063/5.0294438","DOIUrl":"https://doi.org/10.1063/5.0294438","url":null,"abstract":"Current-induced switching of non-collinear antiferromagnets, represented by Mn3Sn, has attracted considerable interest due to its potential in advanced electronic devices. While a model based on the spin–orbit torque (SOT) self-consistently explains the switching, Joule heating was found to play an important role in some studies using polycrystalline or thick epitaxial Mn3Sn films by heating the films to or above the Néel temperature. Here, we evaluate the roles of SOT and Joule heating in the current-induced switching of thin epitaxial films of Mn3Sn (15 nm). At temperatures from 140 to 300 K, the switching current is found to be well below the current required to heat the sample to the Néel temperature, indicating that the non-collinear antiferromagnetic order is preserved during the switching. This suggests that the role of Joule heating is less significant in such thin epitaxial films than in the aforementioned studies. Our results provide insight into the dominant role of SOT in the current-induced switching of epitaxial Mn3Sn films with relatively low thicknesses, consistent with SOT-driven switching.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"28 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145202956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ultralow lattice thermal conductivity and glass-like thermal transport induced by double stacking faults in monolayer MS2 (M = Mo, W) 单层MS2 （M = Mo， W）中双层错诱导的超低晶格热导率和类玻璃热输运

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-10-01 DOI: 10.1063/5.0292424

Haoran Wei, Weiwei Xu, Xin Jin, Xianyong Ding, Li Shi, Yuanhao Duan, Xiaoliang Xiao, Jing Fan, Rui Wang, Xiaozhi Wu

{"title":"Ultralow lattice thermal conductivity and glass-like thermal transport induced by double stacking faults in monolayer MS2 (M = Mo, W)","authors":"Haoran Wei, Weiwei Xu, Xin Jin, Xianyong Ding, Li Shi, Yuanhao Duan, Xiaoliang Xiao, Jing Fan, Rui Wang, Xiaozhi Wu","doi":"10.1063/5.0292424","DOIUrl":"https://doi.org/10.1063/5.0292424","url":null,"abstract":"Ultralow lattice thermal conductivity (κL) is critical for enhancing thermoelectric efficiency and thermal barrier performance. Utilizing density functional theory and the unified theory, we systematically investigate the lattice dynamics and thermal transport properties in monolayer MS2 (M = Mo, W), containing two adjacent stacking faults (two-SFs). Compared to their intrinsic monolayers, we find that the two-SFs MoS2 possess a substantial suppression of κL. Microscopically, the order of reduction of κL mainly arises from the reduction of phonon group velocity and the significant enhancement of the three-phonon scattering rates, which originate from the combination of increased three-phonon scattering channels and hardened third-order interatomic force constants. The enhancement of three-phonon scattering channels is due to the closed acoustic–optical (a–o) gap in two-SFs MoS2. As temperature increases, two-SFs MoS2 exhibit hierarchical phonon thermal transport. Diffusons dominate thermal transport and break the conventional κL∝T−1 dependence, making κL display glass-like behavior. These insights may provide some perspectives for the potential applications of transition metal dichalcogenides in thermoelectric and micro/nanoelectronic devices, carry broad implications for phonon physics and thermal engineering in two-dimensional material systems, and reveal the regime of multimodal phonon transport generated by introducing periodic stacking faults.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"115 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145202939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Perspective on polarization regulation for advanced energy storage 先进储能的极化调节展望

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-09-30 DOI: 10.1063/5.0288079

Leiyang Zhang, Fukang Chen, Yunyao Huang, Ruiyi Jing, Li Jin

引用次数: 0

Competitive nucleation and dendritic growth of βNb5Si3 and Nb3Si intermetallic compounds within liquid Nb-25 at. % Si alloy under electrostatic levitation condition βNb5Si3和Nb3Si金属间化合物在Nb-25溶液中的竞争成核和枝晶生长。静电悬浮条件下的% Si合金

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-09-30 DOI: 10.1063/5.0293837

Z. X. Wan, L. Hu, Q. Long, B. Wei

引用次数: 0

Reversible dc-Ge to (β-Sn)-Ge transformation under high shear 高剪切作用下可逆dc-Ge向(β-Sn)-Ge转变