Applied Physics Letters最新文献_第6页

Enhanced UV-assisted pulsed discharges via DC-bias-assisted photoemission from a foam Zn cathode 利用泡沫锌阴极的直流偏置辅助光发射增强紫外辅助脉冲放电

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-05 DOI: 10.1063/5.0350413

Liang Qin,Nan Jiang,Ju Li,Yongqiang Fu,Zunrong Sheng,Jie Li

{"title":"Enhanced UV-assisted pulsed discharges via DC-bias-assisted photoemission from a foam Zn cathode","authors":"Liang Qin,Nan Jiang,Ju Li,Yongqiang Fu,Zunrong Sheng,Jie Li","doi":"10.1063/5.0350413","DOIUrl":"https://doi.org/10.1063/5.0350413","url":null,"abstract":"Seed-electron injection governs the inception and development of UV-assisted pulsed discharges, but it is generally limited by weak photoemission from conventional metal cathodes. In this Letter, a DC bias voltage and a foam Zn cathode are integrated into a UV-assisted pulsed discharge system to regulate pre-pulse photoelectron extraction and negative-charge transport. Photocurrent measurements show that the combined configuration produces a markedly higher photocurrent than either factor alone, indicating a synergistic enhancement of photoelectron extraction and negative-charge transport. This synergistic effect is further reflected in pulsed discharge enhancement, leading to an approximately 285.2% increase in discharge energy relative to the UV-irradiated flat Zn cathode without DC bias. Material characterizations and electric-field simulations suggest that the foam Zn framework has a larger specific surface area, higher UV absorptance, and a stronger local electric field near the cathode. When superimposed with the DC bias, the local electric-field enhancement induced by the foam structure is further strengthened, thereby promoting pre-pulse photoelectron extraction, pre-pulse negative-charge transport, and collection. Consequently, the discharge rapidly evolves from a localized discharge to a stable synchronous multichannel discharge.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"7 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149089944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Annealing SrTiO3 produces an iron-rich surface layer 退火SrTiO3产生富铁表面层

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-05 DOI: 10.1063/5.0351975

Juliana Sebolt,Anton V. Ievlev,Prithwijit Mandal,Kyoungjun Lee,Jieun Kim,C. Stephen Hellberg,Patrick Irvin,Chang-Beom Eom,Jeremy Levy

{"title":"Annealing SrTiO3 produces an iron-rich surface layer","authors":"Juliana Sebolt,Anton V. Ievlev,Prithwijit Mandal,Kyoungjun Lee,Jieun Kim,C. Stephen Hellberg,Patrick Irvin,Chang-Beom Eom,Jeremy Levy","doi":"10.1063/5.0351975","DOIUrl":"https://doi.org/10.1063/5.0351975","url":null,"abstract":"SrTiO3 (STO) is among the most widely used substrates in complex oxide heterostructure research, yet the role of its trace impurity content in determining interface properties remains poorly understood. Here, we show that high-temperature annealing (the standard procedure for preparing TiO2-terminated STO surfaces) universally drives Fe impurities from the substrate bulk to the surface, forming a sharp, delta-like distribution within a few nanometers of the surface. Using time-of-flight secondary ion mass spectrometry with nanometer-scale depth resolution, we find that Fe is largely undetectable before annealing but appears prominently at the surface after annealing in all 16 substrates surveyed from three independent commercial suppliers. A systematic study on pieces diced from a single substrate demonstrates that surface Fe concentration increases with both annealing temperature and duration, following thermally activated, diffusion-limited kinetics with an activation energy of approximately 3 eV. Density functional theory calculations confirm a thermodynamic preference for Fe substitution near the STO surface, establishing the driving force for segregation. This annealing-induced redistribution effectively deposits a hidden layer of magnetic impurities within a few nanometers of the surface. These results have direct implications for complex oxide heterostructures such as LaAlO3/SrTiO3, where annealing-dependent Fe accumulation at the STO surface may account for the widely reported magnetic signatures at such interfaces.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"8 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149089951","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Correlating biaxial stress to metastable phases in Hf0.5Zr0.5O2 on substrates with different coefficients of thermal expansion 不同热膨胀系数基底上Hf0.5Zr0.5O2中双轴应力与亚稳相的关系

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-05 DOI: 10.1063/5.0354327

Nooreen T. Qureshi,Malihe Ferasat,Luke Johnson,Benjamin L. Aronson,Yong Kyu Choi,Nicolas K. Lam,Megan K. Lenox,Jordan A. Hachtel,Nikhil Shukla,Thomas E. Beechem,Kory Burns,Jon F. Ihlefeld

{"title":"Correlating biaxial stress to metastable phases in Hf0.5Zr0.5O2 on substrates with different coefficients of thermal expansion","authors":"Nooreen T. Qureshi,Malihe Ferasat,Luke Johnson,Benjamin L. Aronson,Yong Kyu Choi,Nicolas K. Lam,Megan K. Lenox,Jordan A. Hachtel,Nikhil Shukla,Thomas E. Beechem,Kory Burns,Jon F. Ihlefeld","doi":"10.1063/5.0354327","DOIUrl":"https://doi.org/10.1063/5.0354327","url":null,"abstract":"The effects of biaxial stress in hafnium zirconium oxide (HZO) thin films on the phase constitution and dielectric response are studied through the preparation of HZO films on substrates with coefficients of thermal expansion (CTE) ranging from 0.52 to 12.97 × 10−6 K−1. X-ray diffraction-based stress measurements revealed a systematic decrease in film biaxial tensile stress with increasing substrate CTE. Grazing incidence and attenuated total reflectance Fourier transform infrared spectroscopy revealed spectral energy shifts that scale with film stress, proving vibrational spectroscopy as an additional indicator of film stress. Ferroelectric responses are observed in HZO prepared on low CTE substrates, and antiferroelectric-like responses are observed in films on high CTE substrates. Results indicate that reducing substrate CTE increases tensile biaxial stress and results in higher fractions of the metastable polar orthorhombic phase. High substrate CTE values lead to low HZO stress values and spectroscopic and antiferroelectric responses consistent with the presence of the antipolar o-I phase.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"11 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149089953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Overcoming the mobility–reliability trade-off in BEOL-compatible In2O3-based FETs through synergistic doping and prolonged annealing 通过协同掺杂和长时间退火克服beol兼容in2o3基fet的迁移率和可靠性权衡

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-05 DOI: 10.1063/5.0345552

Huangbai Liu,Yan Le,Gan Liu,Wei Shi,Weibing Hao,Xinming Li,Dong Zhang,Kai Ni,Chen Sun,Xiao Gong

{"title":"Overcoming the mobility–reliability trade-off in BEOL-compatible In2O3-based FETs through synergistic doping and prolonged annealing","authors":"Huangbai Liu,Yan Le,Gan Liu,Wei Shi,Weibing Hao,Xinming Li,Dong Zhang,Kai Ni,Chen Sun,Xiao Gong","doi":"10.1063/5.0345552","DOIUrl":"https://doi.org/10.1063/5.0345552","url":null,"abstract":"Oxide semiconductors field-effect transistors (OS FETs) capable of simultaneously delivering high mobility and excellent reliability are a key platform for high-performance circuits and memory modules in monolithic three-dimensional integrated circuits (M3D ICs). In this work, we propose a synergistic strategy combining Zn doping and prolonged thermal annealing (PTA) to address the mobility–reliability trade-off in InZnOX FETs. The Zn doping ratio was controlled by adjusting the precursor-cycle ratio during atomic layer deposition. Zn incorporation suppresses channel crystallization during PTA, allowing the InZnOX channel to retain its amorphous structure. The results indicate that Zn doping effectively suppresses the hydrogen-related negative threshold-voltage shift (ΔVTH) and improves device reliability, while PTA mitigates the mobility degradation induced by doping and further enhances bias-stress stability. In particular, all PTA-treated InZnOX FETs exhibit mobilities exceeding 80 cm2 V−1 s−1, outperforming the InZnOX FETs without PTA. For PTA-treated devices with an In:Zn ratio of 22:1, a |ΔVTH| of only 11 mV after 1000 s of stress is achieved at 360 K under a gate-overdrive voltage of 4 V. These results demonstrate a feasible approach for realizing OS FETs with enhanced performance, robust reliability, and back-end-of-line-compatible processing for future applications in M3D ICs.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"15 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149089605","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Role of polarity in the growth of cubic GaN within silicon inverted pyramids 极性在硅倒金字塔中立方氮化镓生长中的作用

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-05 DOI: 10.1063/5.0350898

David Lister,Melissa Radford,Sara Fortin,Bilal Janjua,Mohsen Asad,Karen L. Kavanagh,Simon P. Watkins

{"title":"Role of polarity in the growth of cubic GaN within silicon inverted pyramids","authors":"David Lister,Melissa Radford,Sara Fortin,Bilal Janjua,Mohsen Asad,Karen L. Kavanagh,Simon P. Watkins","doi":"10.1063/5.0350898","DOIUrl":"https://doi.org/10.1063/5.0350898","url":null,"abstract":"A lack of spontaneous internal polarization makes cubic GaN (c-GaN) a well-suited material for emerging micro-LED-based short-range communication, where c-GaN promises increased speed over conventional hexagonal GaN (h-GaN). Although c-GaN is metastable, there are well-established methods for growing it in Si V- or U-grooves; the logical step is to truncate these grooves to wedges or inverted pyramids for small devices. There are limited reports of GaN grown in inverted pyramid templates, and the results are contradictory. To study this process, we perform selective area growth of GaN using organometallic vapor phase epitaxy on Si inverted pyramidal templates and analyze our samples by cross-sectional transmission electron microscopy. We find that polarity is critical to understanding the growth of c-GaN in this fourfold geometry, in contrast to the growth in long grooves. This effect fits within the broader set of challenges of polar-on-nonpolar heteroepitaxy; the c-GaN inside the fourfold symmetric template has its symmetry reduced by polarity to be twofold. In typical growth conditions—where the underlying h-GaN polarity is uniform—we find this implies that two h-GaN to c-GaN grain boundaries will have a polarity inversion. We observe two different structures at these inverting boundaries, including a previously unreported inversion domain boundary approximately along the basal plane of the nominally undoped h-GaN. These findings show that for small devices—such as micro-LEDs—the polarity-inverting interfaces should be controlled, for example by suppressing the growth of h-GaN on two facets of the template or by locally controlling the h-GaN polarity.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"23 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149089881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Emerging spin-orbitronics in van der Waals 2D semiconductors 范德华二维半导体中新兴的自旋轨道电子学

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-05 DOI: 10.1063/5.0343296

Tingyu Qu,Shiming Huang,Lianying Zhu,Gyung-Min Choi,Deyi Fu

{"title":"Emerging spin-orbitronics in van der Waals 2D semiconductors","authors":"Tingyu Qu,Shiming Huang,Lianying Zhu,Gyung-Min Choi,Deyi Fu","doi":"10.1063/5.0343296","DOIUrl":"https://doi.org/10.1063/5.0343296","url":null,"abstract":"Harnessing multiple quantum degrees of freedom, including spin, valley, and orbital angular momentum, in van der Waals (vdW) semiconductors offers a compelling route beyond conventional charge-based electronics. This perspective examines the rapid rise of spin-orbitronics and orbitronics in two-dimensional (2D) semiconductors, focusing on black phosphorus (BP) and indium selenide (InSe) as representative platforms. BP serves as a unique paradigm for anisotropic spin-orbitronics; its puckered lattice enables highly directional spin transport and a predicted anisotropic orbital Hall effect without requiring strong intrinsic spin–orbit coupling. We discuss the realization of gate-tunable magnetic tunnel junctions using ferromagnetic Co-intercalated BP and highlight the critical role of “clean” indium-assisted vdW contacts in resolving intrinsic spin and orbital dynamics. Complementarily, InSe stands out as a premier candidate for gate-switchable Rashba physics, where electrically modulated inversion-symmetry breaking enables dynamic tuning of spin generation and relaxation regimes. Finally, we outline pathways toward programmable, multi-degree-of-freedom spin-orbitronic devices, such as reconfigurable spin diodes and orbital-torque memories, integrated within all-vdW architectures.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"1 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149089945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electron beam-induced magnetic phase transition in a short-period helimagnet MnCoSi 电子束诱导短周期helimagonmncosi的磁相变

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-05 DOI: 10.1063/5.0353658

Wa He,Xia Deng,Junwei Zhang,Xue Li,Zhipeng Hou,Bei Ding,Yong Peng

{"title":"Electron beam-induced magnetic phase transition in a short-period helimagnet MnCoSi","authors":"Wa He,Xia Deng,Junwei Zhang,Xue Li,Zhipeng Hou,Bei Ding,Yong Peng","doi":"10.1063/5.0353658","DOIUrl":"https://doi.org/10.1063/5.0353658","url":null,"abstract":"Among the novel phenomena hosted by exotic spin textures, the interaction between the short-period helical spin order and the electric current can generate emergent electric fields, holding promise for miniature quantum inductors. However, effective means to control such helical structures, including their periodicity, remain underdeveloped, significantly constraining their practical application. Here, we show that electron beam irradiation of the centrosymmetric helical magnet MnCoSi continuously tunes its helical period, achieving an increase from 5.13 to 9.75 nm. With further irradiation, this short-period helical antiferromagnetic domain converts to a ferromagnetic domain. This magnetic phase transition is driven by electron beam-induced displacements of Mn atoms, which give rise to lattice distortions; these distortions in turn modulate the nearest-neighbor (J1) and next-nearest-neighbor (J2) exchange interactions, thereby altering the periodicity of the spin helix. The results demonstrate that subtle atomic displacements achieve effective control over the magnetism of MnCoSi and establish a direct link between lattice degrees of freedom and helical spin order. Consequently, this work provides crucial guidance for the fundamental understanding and applications in emerging electromagnetics of such compounds.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"77 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149151505","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fe-mediated phase evolution and defect regulation in flexible Cu2Se films for enhanced thermoelectric transport 柔性Cu2Se薄膜中fe介导的相变和缺陷调控增强热电输运

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-05 DOI: 10.1063/5.0353683

Huanyu Chen,Ying Zhao,Shaolong Liu,Jingxuan He,Xia Xiang,Sean Li,Yangfang Li,Xiaotao Zu

{"title":"Fe-mediated phase evolution and defect regulation in flexible Cu2Se films for enhanced thermoelectric transport","authors":"Huanyu Chen,Ying Zhao,Shaolong Liu,Jingxuan He,Xia Xiang,Sean Li,Yangfang Li,Xiaotao Zu","doi":"10.1063/5.0353683","DOIUrl":"https://doi.org/10.1063/5.0353683","url":null,"abstract":"The monoclinic copper selenide (α-Cu2Se) is a promising thermoelectric (TE) material due to its ordered Cu sublattice and intrinsically low thermal conductivity for near-room-temperature applications. However, excessive Cu vacancies in α-Cu2Se lead to carrier overconcentration and limit TE performance, whereas the disordered Cu sublattice of β-Cu2Se provides a potential route for carrier transport regulation. In this work, flexible Fe-incorporated Cu2Se films were fabricated by combining low-temperature hydrothermal synthesis with screen printing and subsequent thermal annealing. Moderate Fe incorporation enables the controllable α/β phase evolution and defect landscape modulation, promoting structural reconstruction and optimizing Cu-related defect chemistry. Structural analysis is consistent with partial Fe occupation at Cu sites in β-Cu2Se, together with the formation of a crystalline Fe2O3 secondary phase. Such regulation exploits the complementary characteristics of ordered α-Cu2Se and defect-mediated β-Cu2Se, leading to a balanced carrier concentration and mobility relationship for enhanced thermoelectric transport. As a result, the optimized Fe-doped Cu2Se film exhibits a maximum power factor of 657 μW m−1 K−2 at room temperature. Furthermore, a flexible six-leg thermoelectric generator fabricated from the optimized film delivers an open-circuit voltage of ∼12 mV at ΔT = 40 K and a maximum power of 9.46 nW at ΔT = 29.1 K. This work provides insights into Fe-regulated α/β phase evolution and Cu-related defect engineering in flexible Cu2Se films, offering a promising strategy for developing near-room-temperature flexible thermoelectric generators.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"27 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149089834","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Magnetic field tuning of electronic structure and electrocatalytic kinetics of Fe-doped RuO2 nanofibers fe掺杂RuO2纳米纤维电子结构的磁场调谐及电催化动力学

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-05 DOI: 10.1063/5.0347253

Shu-Meng Li,Jin-Hua Liu,Yu-Ze Sun,Wen-Hua Yang,Zheng Wei,Hong-Ru Shang,Ling-Yun Li,Jun Zhang,Wen-Peng Han,Yun-Ze Long

{"title":"Magnetic field tuning of electronic structure and electrocatalytic kinetics of Fe-doped RuO2 nanofibers","authors":"Shu-Meng Li,Jin-Hua Liu,Yu-Ze Sun,Wen-Hua Yang,Zheng Wei,Hong-Ru Shang,Ling-Yun Li,Jun Zhang,Wen-Peng Han,Yun-Ze Long","doi":"10.1063/5.0347253","DOIUrl":"https://doi.org/10.1063/5.0347253","url":null,"abstract":"Electrocatalytic water splitting is considered a crucial pathway for sustainable hydrogen production, yet its efficiency remains limited by the sluggish kinetics of the oxygen evolution reaction (OER). Compared with conventional static structural regulation strategies, the application of external physical fields offers new possibilities for dynamically tuning the electronic structure and interfacial reaction behavior of catalysts. In this work, Fe-doped RuO2 nanofibers (NFs) were prepared via electrospinning combined with calcination, and the effect of an external magnetic field on their electrocatalytic performance was investigated. The results show that an appropriate amount of Fe doping effectively modulates the local electronic environment of Ru sites, enhancing the electrical conductivity and structural stability of the material. Among them, Fe0.05Ru0.95O2 NFs exhibit the best catalytic performance. Upon further application of an 800 mT magnetic field, both hydrogen evolution reaction and OER activities are further enhanced, achieving overpotentials of 62 and 256 mV at a current density of 10 mA cm−2, respectively, and maintaining stable operation for over 200 h at 50 mA cm−2. Combined x-ray photoelectron spectroscopy, in situ Raman spectroscopy, and density functional theory analyses reveal that the magnetic field can modulate the local electronic environment of Fe–O–Ru, shifting the d-band center toward the Fermi level while lowering the energy barrier of key reaction steps, thereby improving the adsorption/desorption equilibrium of reaction intermediates.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"3 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149089888","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Erratum: “Optical isolator based on a subwavelength integrated optical metawaveguide” [Appl. Phys. Lett. 128 , 151108 (2026)] 校误：“基于亚波长集成光元波导的光隔离器”[苹果]。理论物理。Lett. 128,151108 (2026)]

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-05 DOI: 10.1063/5.0352831

Nikita G. Iukhtanov,Roman Savelev,Ilya Volkov,Mikhail V. Rybin,Mihail Petrov

引用次数: 0