Applied Physics Letters最新文献_第6页

Strain-induced competition of thermoelectric parameters in monolayer HfS2 应变诱导的单层HfS2热电参数竞争

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-10-13 DOI: 10.1063/5.0287334

Yi-min Ding, Min Jiang, Yu Wu, Youyong Li

{"title":"Strain-induced competition of thermoelectric parameters in monolayer HfS2","authors":"Yi-min Ding, Min Jiang, Yu Wu, Youyong Li","doi":"10.1063/5.0287334","DOIUrl":"https://doi.org/10.1063/5.0287334","url":null,"abstract":"Band convergence strategy has been widely used to improve thermoelectric performance. However, the effect of intervalley scattering caused by band convergence on the electrical and thermal properties is usually neglected. In this work, we investigate the thermoelectric properties of monolayer HfS2 under different tensile strains. The valence band of HfS2 can realize convergence at 6% strain. In this case, the Seebeck coefficient S reaches the maximum due to the significant increase in the density of states. Furthermore, the carrier scattering channels increases due to the intervalley scattering, which makes the electrical conductivity σ drop sharply. The competition between Seebeck coefficient and electrical conductivity leads the power factor (S2σ) decreasing with strain. On the other hand, band convergence effectively reduces the lattice thermal conductivity by softening phonons and increasing the phonon scattering rate. Furthermore, it enhances phonon scattering through electron–phonon coupling. The lattice thermal conductivity leads the way in the competition between thermoelectric parameters, resulting in a significant increase in ZT following band convergence. Our work provides important insights into the modulation of thermoelectric performance through strain and band convergence strategy.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"63 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145282926","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Determination of the dependence of long-lived hot-carrier temperature on excitation power and its effect on the radiative decay rate in GaN/InGaN nanodisks GaN/InGaN纳米片中长寿命热载子温度对激发功率的依赖性及其对辐射衰减率的影响

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-10-13 DOI: 10.1063/5.0283647

Kanchan Singh Rana, Navneet Thakur, Swaroop Ganguly, Dipankar Saha

{"title":"Determination of the dependence of long-lived hot-carrier temperature on excitation power and its effect on the radiative decay rate in GaN/InGaN nanodisks","authors":"Kanchan Singh Rana, Navneet Thakur, Swaroop Ganguly, Dipankar Saha","doi":"10.1063/5.0283647","DOIUrl":"https://doi.org/10.1063/5.0283647","url":null,"abstract":"Quantum-confined GaN/InGaN-based heterostructures are a natural choice for light-emitting devices due to their enhanced luminescence and superior efficiency. The reduced density of states and improved quantum confinement lead to improved radiative efficiency. However, under high excitation, quantum-confined structures exhibit band tail filling at elevated energies, giving rise to several effects, including altered carrier capture dynamics, extended radiative lifetimes, hot-carrier accumulation, and phonon bottlenecks. These effects may reduce the efficacy of the radiative process in the active region. Here, we show that the persistence of hot carriers—characterized by their elevated effective temperature and cooling dynamics—serves as a good metric for evaluating the overall efficacy of quantum-confined structures. To demonstrate this, we employ GaN/InGaN nanodisks as the host material and present a methodology for extracting hot-carrier temperature and cooling behavior using power-dependent photoluminescence and time-correlated single-photon counting measurements. While the radiative efficiency is measured around the peak emission wavelength, the short-wavelength tail reveals clear signatures of high-energy carrier occupation in both ground and excited states.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"135 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145282931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Integrated phononic waveguide on thin-film lithium niobate on diamond 金刚石上铌酸锂薄膜的集成声子波导

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-10-13 DOI: 10.1063/5.0285138

Sultan Malik, Felix M. Mayor, Wentao Jiang, Hyunseok Oh, Carl Padgett, Viraj Dharod, Jayameenakshi Venkatraman, Ania C. Bleszynski Jayich, Amir H. Safavi-Naeini

引用次数: 0

Molecular beam epitaxy of In-assisted ScAlN/GaN HEMT structures with ultralow sheet resistance 具有超低片阻的In-assisted ScAlN/GaN HEMT结构的分子束外延

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-10-13 DOI: 10.1063/5.0283382

Liuyun Yang, Haotian Ye, Jinlin Wang, Ding Wang, Bingxuan An, Tao Wang, Rui Wang, Fang Liu, Bowen Sheng, Weikun Ge, Ping Wang, Xinqiang Wang

引用次数: 0

Quantitative photoacoustic tomography of blood oxygenation enhanced by Monte Carlo modeling 蒙特卡罗模型增强血氧定量光声断层扫描

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-10-13 DOI: 10.1063/5.0299956

Linghui Gong, Chao Cai, Hai Lin, Yidan Zhang, Zhaoyu Wang, Zequan Xu, Yubin Liu

引用次数: 0

Quantifying trapped magnetic vortex losses in niobium resonators at mK temperatures mK温度下铌谐振器中捕获磁涡损失的量化

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-10-13 DOI: 10.1063/5.0282159

D. Bafia, B. Abdisatarov, R. Pilipenko, Y. Lu, G. Eremeev, A. Romanenko, A. Grassellino

{"title":"Quantifying trapped magnetic vortex losses in niobium resonators at mK temperatures","authors":"D. Bafia, B. Abdisatarov, R. Pilipenko, Y. Lu, G. Eremeev, A. Romanenko, A. Grassellino","doi":"10.1063/5.0282159","DOIUrl":"https://doi.org/10.1063/5.0282159","url":null,"abstract":"Trapped magnetic vortices in niobium introduce microwave losses that degrade the performance of superconducting resonators. While such losses have been extensively studied above 1 K, we report here their direct quantification in the millikelvin and low-photon regime relevant to quantum devices. Using a high-quality factor 3D niobium cavity cooled through its superconducting transition in controlled magnetic fields, we isolate vortex-induced losses and find the resistive component of the sensitivity to trapped flux S to be approximately 2 n Ω/mG at 10 mK and 6 GHz. The decay rate is initially dominated by two-level system (TLS) losses from the native niobium pentoxide, with vortex-induced degradation of T1 occurring above Btrap∼ 50 mG. In the absence of the oxide, even 10 mG of trapped flux limits performance, Q0∼ 1010, or T1∼ 350 ms, underscoring the need for stringent magnetic shielding. The resistive sensitivity, S, decreases with temperature and remains largely field-independent, whereas the reactive component, S′, exhibits a maximum near 0.8 K. These behaviors are well modeled within the Coffey–Clem framework in the zero-creep limit, under the assumption that vortex pinning is enhanced by thermally activated processes. Our results suggest that niobium-based transmon qubits can tolerate vortex-induced dissipation at trapped field levels up to several hundred mG, but achieving long coherence times still requires careful magnetic shielding to suppress lower-field losses from other mechanisms.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"18 1 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145282936","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Liquid collector-assisted electrohydrodynamic printing of unrestricted-height architectures 液体收集器辅助的无限制高度结构的电流体动力印刷

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-10-13 DOI: 10.1063/5.0275172

Jiyao Xing, Xiaobo Wen, Sansan Yan, Nannan Xu, Zhongmin Geng, Dongming Xing

{"title":"Liquid collector-assisted electrohydrodynamic printing of unrestricted-height architectures","authors":"Jiyao Xing, Xiaobo Wen, Sansan Yan, Nannan Xu, Zhongmin Geng, Dongming Xing","doi":"10.1063/5.0275172","DOIUrl":"https://doi.org/10.1063/5.0275172","url":null,"abstract":"Despite numerous efforts, electrohydrodynamic direct-writing still faces a significant challenge in constructing 3D architectures with considerable height. Herein, we present a liquid collector-assisted electrohydrodynamic (LCE) printing strategy to print architectures with unrestricted height. This method employs a liquid bath with an immersed descending platform instead of the traditional solid collector, enabling the ink to solidify at the liquid surface through solvent exchange while keeping the as-printed architectures always submerged in the liquid. Both theoretical analysis and experimental investigation reveal that optimizing the Z axis movement speed, based on the single-layer printing path length, printing speed, and flow rate, is pivotal to the execution of LCE printing. We demonstrate that LCE printing can continuously fabricate a honeycomb architecture until it reaches the depth limit of the currently used liquid bath, achieving a height-to-wall thickness ratio up to 1314, with a height of 67 mm and a wall thickness of 51 μm. The results indicate that LCE printing thoroughly addresses the limitation of printable height, making it a highly versatile, high-resolution 3D printing technique with potential applications in smart materials, energy devices, and biomedical engineering.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"64 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145282922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhancement of magnon transport length in easy-plane antiferromagnets 易平面反铁磁体中磁子输运长度的增强

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-10-10 DOI: 10.1063/5.0274061

Yichen Su, Chenyan Hu, Feng Pan, Jilei Chen, Cheng Song

引用次数: 0

Remarkable thermal hysteresis of thermal conductivity in nearly freestanding VO2 nanowire across the phase transition 在几乎独立的VO2纳米线中，热导率在相变过程中存在显著的热滞后

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-10-10 DOI: 10.1063/5.0286216

Yong Li, Fushan Wang, Junyao Yin, Hao Tang, Juekuan Yang

引用次数: 0

Superconducting spintronic device based on Fe3GaTe2/CsV3Sb5/Fe3GaTe2 van der Waals heterojunctions 基于Fe3GaTe2/CsV3Sb5/Fe3GaTe2范德华异质结的超导自旋电子器件

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-10-10 DOI: 10.1063/5.0272896

Jing Kong, Heshuang Wei, Jinyu Duan, Yuanyu Song, Gaomeng Hou, Pengfei Liu, Ping Wang, Delin Zhang, Yong Jiang

{"title":"Superconducting spintronic device based on Fe3GaTe2/CsV3Sb5/Fe3GaTe2 van der Waals heterojunctions","authors":"Jing Kong, Heshuang Wei, Jinyu Duan, Yuanyu Song, Gaomeng Hou, Pengfei Liu, Ping Wang, Delin Zhang, Yong Jiang","doi":"10.1063/5.0272896","DOIUrl":"https://doi.org/10.1063/5.0272896","url":null,"abstract":"van der Waals (vdW) heterojunctions have emerged as highly promising candidates for next-generation spintronic devices, owing to their exceptional interface quality, scalability, and tunable electronic properties. Here, we report a vdW superconducting heterojunction based on the Fe3GaTe2/CsV3Sb5/Fe3GaTe2, which combines the strong perpendicular magnetic anisotropy of Fe3GaTe2 with the superconductivity and charge density wave order of the Kagome metal CsV3Sb5. Notably, this superconducting heterojunction exhibits a magnetoresistance of 0.25% at 2 K, approximately two times higher than that observed at elevated temperatures. The magnetic proximity effect in CsV3Sb5 modulates superconductivity by suppressing spin-singlet Cooper pairing and enabling spin-triplet states. The interplay between magnetism and superconductivity not only elucidates the coexistence of competing electronic orders in CsV3Sb5 but also highlights the potential of such heterojunctions for energy-efficient, high-performance spintronic devices. Our work establishes Fe3GaTe2/CsV3Sb5/Fe3GaTe2 as a promising platform for engineering spin-polarized superconducting states and advancing quantum computing technologies.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"18 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145260722","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0