Applied Physics Letters最新文献_第6页

Forward bias stress-induced degradation mechanism in β-Ga2O3 SBDs: A trap-centric perspective

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-03-25 DOI: 10.1063/5.0260529

Sijie Bu, Yingzhe Wang, Xuefeng Zheng, Shaozhong Yue, Danmei Lin, Longbing Yi, Vazgen Melikyan, Xiaohua Ma, Yue Hao

{"title":"Forward bias stress-induced degradation mechanism in β-Ga2O3 SBDs: A trap-centric perspective","authors":"Sijie Bu, Yingzhe Wang, Xuefeng Zheng, Shaozhong Yue, Danmei Lin, Longbing Yi, Vazgen Melikyan, Xiaohua Ma, Yue Hao","doi":"10.1063/5.0260529","DOIUrl":"https://doi.org/10.1063/5.0260529","url":null,"abstract":"This study explores the impact of constant forward electrical stress on beta-gallium oxide (β-Ga2O3) Schottky barrier diodes (SBDs) from the prospective of defect evolution. Prolonged stress significantly increased the reverse leakage current density (JR) and forward current density (JF) under small bias and decreased the turn-on voltage (Von). Temperature-dependent current-voltage (I-V-T) analysis revealed that the reverse leakage current is dominated by Poole-Frenkel (PF) emission in both fresh and stressed SBDs, while the forward current transport mechanism transforms from thermionic emission (TE) to trap-assisted tunneling (TAT) after stress. Deep-level transient spectroscopy (DLTS) results identified an intrinsic trap E2* (EC - 0.75 eV) within the β-Ga2O3 drift layer, which is likely a Ga vacancy-related trap. The consistency of this energy level with the PF barrier proves that the increase in this trap is the main reason for the increase in JR. The spatial distribution features that the increase in trap concentration near the metal-semiconductor interface is much larger than that inside the bulk, which establishes the association between this trap and JF under small bias and Von. These findings highlight the critical role of trap evolution in SBD performance degradation under electrical stress.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"90 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143703409","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Controllable ferromagnetism in Cr2Te2 monolayer with intrinsic half-metallicity

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-03-24 DOI: 10.1063/5.0253343

Ruishan Tan, Yunpeng Yang, Zesen Lei, Cuiru Sun, Yuanpeng Ma, Dongna Feng, Tao Jing, Qilong Sun

{"title":"Controllable ferromagnetism in Cr2Te2 monolayer with intrinsic half-metallicity","authors":"Ruishan Tan, Yunpeng Yang, Zesen Lei, Cuiru Sun, Yuanpeng Ma, Dongna Feng, Tao Jing, Qilong Sun","doi":"10.1063/5.0253343","DOIUrl":"https://doi.org/10.1063/5.0253343","url":null,"abstract":"Two-dimensional (2D) magnetic materials with high spin polarization and controllable magnetic anisotropy energy (MAE) are critical for advancing spintronic technologies. Using first-principles calculations, we demonstrate that monolayer Cr2Te2 exhibits intrinsic dynamic/thermal stability, half-metallicity, and robust ferromagnetic ordering. The Curie temperature (Tc) can be elevated from 90 to 190 K via external stimuli. Strain engineering, carrier doping, and electric-fields enable precise control of MAE, while tensile strain and electron doping enhance MAE to 2.680 meV. Conversely, compressive strain and hole doping induce a spin reorientation transition. Moreover, external electric fields also play a key role in determining MAE, suggesting a promising strategy for manipulating MAE in 2D ferromagnets. These modifications primarily arise from the alternations of the spin–orbit coupling (SOC) strength between Te-derived p-orbitals within specific spin channels. These findings establish Cr2Te2 as a versatile platform for spintronics integrating half-metallicity with dynamically adjustable magnetic properties and motivate further experimental exploration.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"76 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143703560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Temperature-controlled terahertz chirality and imaging in a nested split-rings metasurface

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-03-24 DOI: 10.1063/5.0250905

Yu Tang, Junjie Li, Yang Cheng, Zhengqi Liu, Xiaoshan Liu, Guolan Fu, Hanyang Gong, Pingping Pan, Guiqiang Liu

引用次数: 0

Determination of donor- and acceptor-like interface trap density using photoresponsive GIDL in vertically stacked Si-NW GAA FETs

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-03-24 DOI: 10.1063/5.0254522

Seohyeon Park, Jaewook Yoo, Minah Park, Hongseung Lee, Hyeonjun Song, Seongbin Lim, Soyeon Kim, Sojin Jung, TaeWan Kim, Yang-Kyu Choi, Hagyoul Bae

引用次数: 0

Ferroelectric control of valleytronic nonvolatile storage in HfCl2/Sc2CO2 heterostructure

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-03-24 DOI: 10.1063/5.0264472

Zhou Cui, Xunkai Duan, Jiansen Wen, Ziye Zhu, Jiayong Zhang, Jiajie Pei, Cuilian Wen, Tong Zhou, Bo Wu, Baisheng Sa

{"title":"Ferroelectric control of valleytronic nonvolatile storage in HfCl2/Sc2CO2 heterostructure","authors":"Zhou Cui, Xunkai Duan, Jiansen Wen, Ziye Zhu, Jiayong Zhang, Jiajie Pei, Cuilian Wen, Tong Zhou, Bo Wu, Baisheng Sa","doi":"10.1063/5.0264472","DOIUrl":"https://doi.org/10.1063/5.0264472","url":null,"abstract":"Valleytronics, utilizing the valley degree of freedom in electrons, has potential for advancing the next-generation nonvolatile storage. However, practical implementation remains challenging due to the limited control over valleytronic properties. Here, we propose ferroelectric HfCl2/Sc2CO2 van der Waals heterostructure as a platform to overcome these limitations, enabling tunable and nonvolatile valleytronic behaviors. Our findings show that the electric polarization state of the Sc2CO2 monolayer governs the electronic properties of heterostructures. Positive polarization induces a direct gap at the valleys, enabling valleytronic functionality for excitation and readout via circularly polarized light, while negative polarization results in an indirect-gap, suppressing valleytronic behavior. Moreover, our transport simulations further demonstrate a polarization-dependent ferroelectric p-i-n junction with 8 nm possesses a maximum tunnel electroresistance (TER) ratio of 1.60 × 108% at a bias of 0.5 eV. These results provide insights into ferroelectric-controlled valleytronic transitions and position the HfCl2/Sc2CO2 heterostructure as a promising candidate for energy-efficient valleytronic memory and nonvolatile storage applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"21 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143703573","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-pressure polyhedral interaction in CsSnI3

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-03-24 DOI: 10.1063/5.0257590

Yujiao Cao, Jie Wei, Xiaogeng Huo, Youchun Wang, Ketao Yin

引用次数: 0

Understanding the microstructure effects of graphite electrode in lithium-ion batteries through multi-physics simulation

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-03-24 DOI: 10.1063/5.0257063

Wen Luo, Jin-Ying Jiao, Jian Wang, Yu-Lin Duan, Zhong-Hui Shen

{"title":"Understanding the microstructure effects of graphite electrode in lithium-ion batteries through multi-physics simulation","authors":"Wen Luo, Jin-Ying Jiao, Jian Wang, Yu-Lin Duan, Zhong-Hui Shen","doi":"10.1063/5.0257063","DOIUrl":"https://doi.org/10.1063/5.0257063","url":null,"abstract":"Graphite anodes are widely regarded as key components for achieving high-performance lithium-ion batteries. However, research on the multiscale effects of anode microstructures remains lacking in depth. The influence of transport and reaction processes within the microstructure on overall battery performance requires a coupling investigation integrating both electrochemical and physical field data. In this study, we construct a two-dimensional (2D) multi-physics model and simulate the 2D geometry and internal electrochemical processes to investigate the multiscale effects of microstructures on overall battery performance. Concurrently, we design three distinct anode structures: porosity gradient distribution structures, hard carbon–graphite composite anodes, and hard carbon-coated graphite anodes to identify structural features that enhance key battery performance metrics. Additionally, we analyze the distribution of side-reaction products and the Li+ concentration to reveal the influence of different microstructures on internal mass transport and electrochemical reactions. We also identify the factors within these three structures that contribute to extending battery lifespan and improving overall performance. This work systematically establishes the relationship between anode microstructures and battery performance, providing insights that are expected to optimize materials, reduce trial-and-error, and use simulations to guide experimental work more efficiently.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"25 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143703574","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Probing near-field heating effects on monolayer MoS2 photoluminescence via tip-enhanced Raman spectroscopy

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-03-24 DOI: 10.1063/5.0250931

Kishore K. Madapu, C. Abinash Bhuyan, Sandip Dhara

引用次数: 0

Hot-carrier photocatalysts with energy-selective contacts based on quantum wells and dots

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-03-24 DOI: 10.1063/5.0256536

Shuanglong Han, Zhiqiang Fan, Ousi Pan, Xiaohang Chen, Zhimin Yang, Yanchao Zhang, Jincan Chen, Shanhe Su

引用次数: 0

Ultra-broadband terahertz polarization converter based on flexible metamaterial

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-03-24 DOI: 10.1063/5.0259523

Mo Yang, Zihang Song, Fangrong Hu, Dawei Wei, Zifeng Yang

{"title":"Ultra-broadband terahertz polarization converter based on flexible metamaterial","authors":"Mo Yang, Zihang Song, Fangrong Hu, Dawei Wei, Zifeng Yang","doi":"10.1063/5.0259523","DOIUrl":"https://doi.org/10.1063/5.0259523","url":null,"abstract":"Polarization is one of the basic properties of electromagnetic (EM) waves, and polarization conversion is essential in many terahertz (THz) applications, including communications and sensitive measurements. Due to the limitations of the materials and process, existing THz polarization converters generally have the disadvantages of narrow operating frequency band and non-flexibility. We experimentally demonstrate a flexible ultra-broadband THz polarization converter operating in reflection. It can efficiently convert a linearly polarized THz wave to its orthogonal counterpart in a broadband regime. The device consists of three layers: the lower metal film, the middle dielectric layer, and the upper metal resonance structure array. The unit cell of the upper metal resonance structure is a four-open-ring formed by subtracting two metal bars from a metal ring. The position of the opening is in the diagonal direction of 45° from the upper right corner to the lower left corner of the unit structure. The device is simulated using a full wave EM simulation software and fabricated by a surface micromachining process. The test experiment is completed using a THz-TDS spectrometer and the results show that the polarization conversion ratio is more than 0.8 in an ultra-broadband regime from 1.45 to 2.67 THz. This ultra-broadband conversion is mainly caused by the magnetic resonance of THz waves. More importantly, the convertible frequency band can be tailored for practical applications across the EM spectrum.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"92 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143703570","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0