Applied Physics Letters最新文献_第6页

In situ construction of sequential nanoreactor with built-in catalyst as self-supporting cathode for lithium–sulfur batteries 原位构建内置催化剂的序贯纳米反应器，作为锂硫电池的自支撑正极

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-09-09 DOI: 10.1063/5.0229114

Yu Wang, Yingqiang Yang, Pengbo Guo, Yi Chen, Yong Chen, Yong Cheng, Jianrong Xiao, Xinyu Li

引用次数: 0

Ferroelectric tunnel junctions based on a HfO2/dielectric composite barrier 基于 HfO2/介电复合势垒的铁电隧道结

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-09-09 DOI: 10.1063/5.0216890

Zhijun Wu, Tianpeng Duan, Zhihong Tian, Yongheng Jiang, Yichun Zhou, Jie Jiang, Qiong Yang

{"title":"Ferroelectric tunnel junctions based on a HfO2/dielectric composite barrier","authors":"Zhijun Wu, Tianpeng Duan, Zhihong Tian, Yongheng Jiang, Yichun Zhou, Jie Jiang, Qiong Yang","doi":"10.1063/5.0216890","DOIUrl":"https://doi.org/10.1063/5.0216890","url":null,"abstract":"The ferroelectric tunnel junction (FTJ), which possesses a simple structure, low power consumption, high operation speed, and nondestructive reading, has attracted great attention for the application of next-generation nonvolatile memory. The complementary metal–oxide–semiconductor-compatible hafnium oxide (HfO2) ferroelectric thin film found in the recent decade is promising for the scalability and industrialization of FTJs. However, the electric performance, such as the tunneling electroresistance (TER) effect, of the current HfO2-based FTJs is not very satisfactory. In this work, we propose a type of high-performance HfO2-based FTJ by utilizing a ferroelectric/dielectric composite barrier strategy. Using density functional theory calculations, we study the electronic and transport properties of the designed Ni/HfO2/MgS/Ni (001) FTJ and demonstrate that the introduction of an ultra-thin non-polar MgS layer facilitates the ferroelectric control of effective potential barrier thickness and leads to a significant TER effect. The OFF/ON resistance ratio of the designed FTJ is found to exceed 4 × 103 based on the transmission calculation. Such an enhanced performance is driven by the resonant tunneling effect of the ON state, which significantly increases transmission across the FTJ when the ferroelectric polarization of HfO2 is pointing to the non-polar layer due to the aroused electron accumulation at the HfO2/MgS interface. Our results provide significant insight for the understanding and development of the FTJs based on the HfO2 ferroelectric/non-polar composite barrier.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":4.0,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142161074","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Switching figure-of-merit, optimal design, and power loss limit of (ultra-) wide bandgap power devices: A perspective 超）宽带隙功率器件的开关性能、优化设计和功率损耗限制：透视

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-09-09 DOI: 10.1063/5.0222105

Matthew Porter, Xin Yang, Hehe Gong, Bixuan Wang, Zineng Yang, Yuhao Zhang

{"title":"Switching figure-of-merit, optimal design, and power loss limit of (ultra-) wide bandgap power devices: A perspective","authors":"Matthew Porter, Xin Yang, Hehe Gong, Bixuan Wang, Zineng Yang, Yuhao Zhang","doi":"10.1063/5.0222105","DOIUrl":"https://doi.org/10.1063/5.0222105","url":null,"abstract":"Power semiconductor devices are utilized as solid-state switches in power electronics systems, and their overarching design target is to minimize the conduction and switching losses. However, the unipolar figure-of-merit (FOM) commonly used for power device optimization does not directly capture the switching loss. In this Perspective paper, we explore three interdependent open questions for unipolar power devices based on a variety of wide bandgap (WBG) and ultra-wide bandgap (UWBG) materials: (1) What is the appropriate switching FOM for device benchmarking and optimization? (2) What is the optimal drift layer design for the total loss minimization? (3) How does the device power loss compare between WBG and UWBG materials? This paper starts from an overview of switching FOMs proposed in the literature. We then dive into the drift region optimization in 1D vertical devices based on a hard-switching FOM. The punch-through design is found to be optimal for minimizing the hard-switching FOM, with reduced doping concentration and thickness compared to the conventional designs optimized for static FOM. Moreover, we analyze the minimal power loss density for target voltage and frequency, which provides an essential reference for developing device- and package-level thermal management. Overall, this paper underscores the importance of considering switching performance early in power device optimization and emphasizes the inevitable higher density of power loss in WBG and UWBG devices despite their superior performance. Knowledge gaps and research opportunities in the relevant field are also discussed.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":4.0,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142160987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Two-dimensional BC12 as an ultra-high performance anode material for lithium-ion batteries 二维 BC12 作为锂离子电池的超高性能负极材料

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-09-09 DOI: 10.1063/5.0226785

Xiao-Juan Ye, Hong-Bao Cao, Rui Shen, Chun-Sheng Liu

{"title":"Two-dimensional BC12 as an ultra-high performance anode material for lithium-ion batteries","authors":"Xiao-Juan Ye, Hong-Bao Cao, Rui Shen, Chun-Sheng Liu","doi":"10.1063/5.0226785","DOIUrl":"https://doi.org/10.1063/5.0226785","url":null,"abstract":"With the gradual development of renewable energy, search for high-performance energy storage materials as anodes for lithium-ion batteries (LIBs) has become urgent. Two-dimensional (2D) materials are considered as candidates for anode materials due to their unique structure and physicochemical properties. Based on first-principles calculations, we propose a 2D material, BC12 monolayer, as an excellent anode for LIBs. BC12 exhibits outstanding dynamic, mechanical, and thermal stability. In addition, BC12 monolayers show not only remarkably high storage capacity (2767.57 mA h g−1) but also low diffusion barrier energy (0.175 eV) and appropriate open circuit voltage (0.3 V). A small volume expansion (0.38%) is also observed during the lithiation process. Furthermore, we undertake a comprehensive analysis on the impact of carbon vacancy in BC12. The presence of carbon vacancy makes the adsorption and diffusion of Li relatively weak, which should be carefully handled in the experimental synthesis process. The above-mentioned investigation offers valuable insights and guidance for the future development and application of 2D anode materials in metal-ion batteries.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":4.0,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142160981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Improving lattice-light-shift uncertainty of an 171Yb optical clock with optimized cooling and trapping lasers 利用优化的冷却和捕获激光器提高 171Yb 光学时钟的晶格光移不确定性

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-09-09 DOI: 10.1063/5.0222370

Chengquan Peng, Tao Zhang, Changyue Sun, Qichao Qi, Taoyun Jin, Shuai Lei, Chengcheng Zhao, Suzhen Feng, Yan Xia, Xinye Xu

引用次数: 0

Spin chain orientation and magneto-optical coupling in twisted NiPS3 homostructures 扭曲 NiPS3 同质结构中的自旋链定向和磁光耦合

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-09-09 DOI: 10.1063/5.0223945

Junying Chen, Xing Xie, Xinyu Oyang, Junnan Ding, Fangping Ouyang, Zongwen Liu, Jian-Tao Wang, Jun He, Yanping Liu

{"title":"Spin chain orientation and magneto-optical coupling in twisted NiPS3 homostructures","authors":"Junying Chen, Xing Xie, Xinyu Oyang, Junnan Ding, Fangping Ouyang, Zongwen Liu, Jian-Tao Wang, Jun He, Yanping Liu","doi":"10.1063/5.0223945","DOIUrl":"https://doi.org/10.1063/5.0223945","url":null,"abstract":"Magnetic two-dimensional (2D) materials have garnered significant attention due to their unique electronic, magnetic, and optical properties and their potential applications in next-generation electronic and optoelectronic devices. However, the magneto-optical effects of oligolayer antiferromagnetic materials remain inadequately understood. Here, we investigate the magnetic properties of few-layer nickel phosphorus trisulfide (NiPS3) and its twisted heterostructures, emphasizing the observation of optical phenomena at low temperatures (1.65 K). By stacking few-layer NiPS3 to fabricate twisted homostructures, we probe their magnetic characteristics using photoluminescence (PL) spectroscopy. Our results reveal that sharp exciton peaks emerge at low temperatures and that the spin chain orientation in oligolayer NiPS3 can be discerned through the polarization dependence of exciton PL intensity. Notably, fewer-layered NiPS3 exhibits a significant magneto-optical effect under an applied magnetic field, allowing the modulation of the polarization angle of its exciton PL spectrum. Additionally, the polarization-dependent Raman spectrum of NiPS3 shows substantial changes under the influence of a magnetic field. These findings underscore the potential of few-layer NiPS3 for future magneto-optical device applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":4.0,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142160986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Two-level system loss: Significant not only at millikelvin 两级系统损耗：不仅在毫开尔文时意义重大

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-09-09 DOI: 10.1063/5.0226792

W. Shan, S. Ezaki

引用次数: 0

Study on the electrical performance degradation mechanism of β -Ga2O3 p-n diode under heavy ion radiation 重离子辐射下 β -Ga2O3 p-n 二极管电气性能退化机理研究

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-09-09 DOI: 10.1063/5.0229345

Shaozhong Yue, Xuefeng Zheng, Fang Zhang, Danmei Lin, Sijie Bu, Yingzhe Wang, Peipei Hu, Jie Liu, Weidong Zhang, Jianfu Zhang, Xiaohua Ma, Yue Hao

{"title":"Study on the electrical performance degradation mechanism of β -Ga2O3 p-n diode under heavy ion radiation","authors":"Shaozhong Yue, Xuefeng Zheng, Fang Zhang, Danmei Lin, Sijie Bu, Yingzhe Wang, Peipei Hu, Jie Liu, Weidong Zhang, Jianfu Zhang, Xiaohua Ma, Yue Hao","doi":"10.1063/5.0229345","DOIUrl":"https://doi.org/10.1063/5.0229345","url":null,"abstract":"The impact of heavy ion irradiation on the β-Ga2O3 p-n diode and its physical mechanism have been studied in this Letter. After the irradiation fluence of 1 × 108 cm−2, it is observed that the electrical performance of the device is significantly degraded. The forward current density (JF) is reduced by 49.4%, the reverse current density (JR) is increased by more than two orders of magnitude, and the breakdown voltage (VBR) is decreased by 30%. Based on the results of the deep-level transient spectroscopy measurement, it is concluded that acceptor-like traps generated with an energy level of EC-0.75 eV in the β-Ga2O3 drift layer dominate the JF degradation of the device, which are most likely related to Ga vacancies. These acceptor-like traps result in the reduction of change carrier concentration, which in turn leads to a decrease in JF. In addition, according to the conductive atomic force microscope measurements and theoretical calculation, it is clearly observed that the latent tracks induced by heavy ion irradiation can act as leakage paths, leading to a significant degradation of JR and VBR.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":4.0,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142161068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

GdWN3 is a nitride perovskite GdWN3 是一种氮化物包晶

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-09-09 DOI: 10.1063/5.0219503

Rebecca W. Smaha, John S. Mangum, Neha Yadav, Christopher L. Rom, Brian M. Wieliczka, Baptiste Julien, Andrew Treglia, Craig L. Perkins, Prashun Gorai, Sage R. Bauers, Andriy Zakutayev

{"title":"GdWN3 is a nitride perovskite","authors":"Rebecca W. Smaha, John S. Mangum, Neha Yadav, Christopher L. Rom, Brian M. Wieliczka, Baptiste Julien, Andrew Treglia, Craig L. Perkins, Prashun Gorai, Sage R. Bauers, Andriy Zakutayev","doi":"10.1063/5.0219503","DOIUrl":"https://doi.org/10.1063/5.0219503","url":null,"abstract":"Nitride perovskites ABN3 are an emerging and highly underexplored class of materials that are of interest due to their intriguing calculated ferroelectric, optoelectronic, and other functional properties. Incorporating novel A-site cations is one strategy to tune and expand such properties; for example, Gd3+ is compelling due to its large magnetic moment, potentially leading to multiferroic behavior. However, the theoretically predicted ground state of GdWN3 was a non-perovskite monoclinic structure. Here, we experimentally show that GdWN3−y crystallizes in a perovskite structure. High-throughput combinatorial sputtering with activated nitrogen is employed to synthesize thin films of Gd2−xWxN3−yOy with oxygen content y &lt; 0.05. Ex situ annealing crystallizes a polycrystalline perovskite phase in a narrow composition window near x = 1. LeBail fits of synchrotron grazing incidence wide angle x-ray scattering data are consistent with a perovskite ground-state structure. Refined density functional theory calculations that included antiferromagnetic configurations confirm that the ground-state structure of GdWN3 is a distorted Pnma perovskite with antiferromagnetic ordering, in contrast to prior predictions. Initial property measurements find that GdWN3−y is paramagnetic down to T = 2 K with antiferromagnetic correlations and that the absorption onset depends on cation stoichiometry. This work provides an important path toward both the rapid expansion of the emerging family of nitride perovskites and understanding their potential multiferroic properties.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":4.0,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142160983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Measuring the topological charge of a vortex beam via the self-rotating beam phase 通过自旋转束相测量涡旋束的拓扑电荷

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-09-09 DOI: 10.1063/5.0221895

Shengxiang Shan, Shubo Cheng, Shuo Liu, Yan Xiong, Yiping Xu, Han Pan, Shaohua Tao, Wenxing Yang

引用次数: 0