Applied Physics Letters最新文献_第6页

A refined method for characterizing afterpulse probability in single-photon avalanche diodes 表征单光子雪崩二极管中后脉冲概率的改进方法

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-11-05 DOI: 10.1063/5.0226118

B. Dejen, A. Vaquero-Stainer, T. S. Santana, L. Arabskyj, P. R. Dolan, C. J. Chunnilall

{"title":"A refined method for characterizing afterpulse probability in single-photon avalanche diodes","authors":"B. Dejen, A. Vaquero-Stainer, T. S. Santana, L. Arabskyj, P. R. Dolan, C. J. Chunnilall","doi":"10.1063/5.0226118","DOIUrl":"https://doi.org/10.1063/5.0226118","url":null,"abstract":"Single-photon avalanche diodes (SPADs) are critical components in low-light-level sensing and photonic quantum information applications. For these, it is often necessary that a full characterization of the SPAD is performed, for which a key metric is the afterpulse probability. This study provides a detailed comparison of the common synchronized and non-synchronized methods used to measure afterpulse probability. Measurements on a single SPAD reveal inconsistencies between the afterpulse probabilities obtained by the two methods. By re-deriving the equations from first principles, the discrepancy is traced to the analysis approach for the non-synchronized experiment. An improved analysis approach is presented, leading to better agreement between the non-synchronized and synchronized methods. The study also provides guidance on the experimental conditions required for the valid application of both methods, along with a detailed analysis of the limitations of the non-synchronized method under high photon flux. These findings offer a more accurate approach for characterizing afterpulse probability and for reconciling the results of two methods, which enables better quantification of SPAD performance.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":4.0,"publicationDate":"2024-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142580389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ultrafast carrier dynamics and transient nonlinear absorption in chalcogenide perovskite BaZrS3 钙钛矿包晶 BaZrS3 中的超快载流子动力学和瞬态非线性吸收

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-11-05 DOI: 10.1063/5.0228009

Pengxian You, Yadong Han, Junhong Yu, Yunfan Yang, Yakun Cao, Xiangyin Zhou, Liang Qiao, Jianbo Hu

{"title":"Ultrafast carrier dynamics and transient nonlinear absorption in chalcogenide perovskite BaZrS3","authors":"Pengxian You, Yadong Han, Junhong Yu, Yunfan Yang, Yakun Cao, Xiangyin Zhou, Liang Qiao, Jianbo Hu","doi":"10.1063/5.0228009","DOIUrl":"https://doi.org/10.1063/5.0228009","url":null,"abstract":"The unique combination of excellent semiconducting properties in halide perovskites and the high stability and nontoxicity of oxide perovskites has led to a recent surge in interest in chalcogenide perovskite BaZrS3 for optoelectronic applications. However, to realize its potential in future device technologies, a comprehensive understanding of photoexcited carrier dynamics and transient optical response is imperative, yet it remains largely unexplored for BaZrS3. In this work, employing transient absorption spectroscopy, we have revealed that photoexcited carriers in epitaxial BaZrS3 nanofilms exhibit two exponential decay components relating to optical phonon cooling and interband recombinations. Meanwhile, our investigation unveils an intriguing transient nonlinear absorption phenomenon in BaZrS3, characterized by the ultrafast switching of the pump-induced transparency (i.e., the saturable absorption) to the absorption enhancement within a timescale commensurate with the measurement resolution (hundreds of femtosecond). This study provides crucial dynamic insights essential for leveraging chalcogenide perovskites, such as BaZrS3, in the development of advanced optoelectronic devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":4.0,"publicationDate":"2024-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142588964","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Broadband nonlinear Bragg diffraction from self-assembled structures in potassium tantalate niobate crystals 钽酸铌酸钾晶体自组装结构的宽带非线性布拉格衍射

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-11-05 DOI: 10.1063/5.0223405

Xing Wen, Zijian Zhang, Yu Wang, Xiangda Meng, Xinyu Jin, Bohan Xing, Jinyu Ruan, Xiaolin Huang, Chengpeng Hu, Peng Tan, Hao Tian

{"title":"Broadband nonlinear Bragg diffraction from self-assembled structures in potassium tantalate niobate crystals","authors":"Xing Wen, Zijian Zhang, Yu Wang, Xiangda Meng, Xinyu Jin, Bohan Xing, Jinyu Ruan, Xiaolin Huang, Chengpeng Hu, Peng Tan, Hao Tian","doi":"10.1063/5.0223405","DOIUrl":"https://doi.org/10.1063/5.0223405","url":null,"abstract":"Nonlinear optical process is a key technology to realize optical communication. Potassium tantalate niobate (KTa1−xNbxO3, KTN) crystals with large nonlinear optical coefficients are potential functional materials for realizing χ2 nonlinear optical processes. However, to accurately modulate the nonlinear optical signals of KTN crystals, the relationship between their second harmonic generation (SHG) properties and ferroelectric domain structures needs to be further investigated. Here, we report the special SHG processes generated by self-assembled structures in KTN crystals. Multimode quasi-phase matching and broadband nonlinear Bragg diffraction are achieved with the changing of polarizations and wavelengths of the fundamental wave. The physical processes behind the multi-polarization and multi-wavelength SHG properties of the KTN crystals are revealed. Our results about the multi-polarization and multi-wavelength SHG properties of KTN crystals will provide guidance for the design and realization of multimode nonlinear optical processes.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":4.0,"publicationDate":"2024-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142588987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

“Beam à la carte”: Laser heater shaping for attosecond pulses in a multiplexed x-ray free-electron laser "自选光束多路 X 射线自由电子激光器中的阿秒脉冲激光加热器整形

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-11-04 DOI: 10.1063/5.0233468

Siqi Li, Zhen Zhang, Shawn Alverson, David Cesar, Taran Driver, Paris Franz, Erik Isele, Joseph P. Duris, Kirk Larsen, Ming-Fu Lin, Razib Obaid, Jordan T. O'Neal, River Robles, Nick Sudar, Zhaoheng Guo, Sharon Vetter, Peter Walter, Anna L. Wang, Joseph Xu, Sergio Carbajo, James P. Cryan, Agostino Marinelli

引用次数: 0

Single-crystal ferroelectric LiNbO3 thin film-based synaptic devices enabled with tunable domain wall current for neuromorphic computing 基于单晶铁电 LiNbO3 薄膜的突触器件，可利用可调畴壁电流实现神经形态计算

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-11-04 DOI: 10.1063/5.0219287

Jiefei Zhu, Changjian Zhou, Qi Liu, Min Zhang

{"title":"Single-crystal ferroelectric LiNbO3 thin film-based synaptic devices enabled with tunable domain wall current for neuromorphic computing","authors":"Jiefei Zhu, Changjian Zhou, Qi Liu, Min Zhang","doi":"10.1063/5.0219287","DOIUrl":"https://doi.org/10.1063/5.0219287","url":null,"abstract":"Neuromorphic devices can emulate the human brain to process information, which receives lots of attention in the field of artificial intelligence. Synaptic devices based on ferroelectric thin films feature low-power consumption, multifunctionality, and scalability. Among them, ferroelectric charged domain wall (CDW) devices have attracted intensive interest for the implementation of memristive devices due to their ultrahigh integration ability inherited from the nanoscale domain wall thickness. In particular, the preparation of wafer-scale single-crystalline ferroelectric thin films via ion-sliced heterogeneous wafer bonding lays a good foundation for large-scale integration of ferroelectric devices with functional circuits. However, the biomimic synaptic characteristics and the systematic demonstration of synaptic devices are largely unexplored for this material system. Here, we demonstrate a model synaptic device based on a single-crystal ferroelectric LiNbO3 thin film, which provides the desired characteristics for neuromorphic computing. The conductance modulation demonstrates good linearity for efficient neuromorphic computing applications. Simulations using the Modified National Institute of Standards and Technology handwritten recognition dataset prove that LiNbO3-based synaptic devices can operate with an online learning accuracy of 95.1%. The injection and annihilation of the CDW are proposed as the basis of the conductivity modulation by combining with the piezoresponse force microscopy and conductive atomic force microscopy mapping measurements. With the mature fabrication process of the ultrathin high-quality ferroelectric thin films, LiNbO3-based synaptic devices have an extensive application prospect for future neuromorphic computing systems.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":4.0,"publicationDate":"2024-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142580399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Sensitive direct converting thin film x-ray detector utilizing β-Ga2O3 fabricated via MOCVD 利用 MOCVD 制造的 β-Ga2O3 直接转换薄膜 X 射线灵敏探测器

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-11-04 DOI: 10.1063/5.0237714

Zhiyu Gan, Chen Li, Xiaohu Hou, Shunjie Yu, Shiyu Bai, Zhixin Peng, Keju Han, Yanni Zou, Zhiwei Wang, Xiaolong Zhao, Guangwei Xu, Shibing Long

{"title":"Sensitive direct converting thin film x-ray detector utilizing β-Ga2O3 fabricated via MOCVD","authors":"Zhiyu Gan, Chen Li, Xiaohu Hou, Shunjie Yu, Shiyu Bai, Zhixin Peng, Keju Han, Yanni Zou, Zhiwei Wang, Xiaolong Zhao, Guangwei Xu, Shibing Long","doi":"10.1063/5.0237714","DOIUrl":"https://doi.org/10.1063/5.0237714","url":null,"abstract":"Ga2O3 has been considered as one of the most suitable materials for x-ray detection, but its x-ray detection performance is still at a low level due to the limitation of its quality and absorbance, especially for hard x-ray. In this work, the effects of growth temperature and miscut angle of the sapphire substrate on the crystal quality of Ga2O3 thin films were investigated based on the MOCVD technique. It was found that the crystal growth mode was transformed from island growth to step-flow growth using miscut sapphire substrates and increasing growth temperature, which was accompanied by the improvement of the crystal quality and the reduction of the density of trapped states. Ga2O3 films with optimal crystal quality were finally prepared on a 4° miscut substrate at 900 °C. The x-ray detector based on this film shows good hard x-ray response with a sensitivity of 3.72 × 105μC·Gyair−1·cm−2. Furthermore, the impacts of Ga2O3 film crystal quality and trap density on the x-ray detector were investigated in depth, and the mechanism of the photoconductive gain of the Ga2O3 thin-film x-ray detector was analyzed.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":4.0,"publicationDate":"2024-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142580390","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Antiferromagnetic–ferromagnetic heterostructure-based spin Hall nano-oscillator 基于反铁磁铁磁异质结构的自旋霍尔纳米振荡器

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-11-04 DOI: 10.1063/5.0231305

Sandeep Soni, Ravish Kumar Raj, Brajesh Kumar Kaushik

{"title":"Antiferromagnetic–ferromagnetic heterostructure-based spin Hall nano-oscillator","authors":"Sandeep Soni, Ravish Kumar Raj, Brajesh Kumar Kaushik","doi":"10.1063/5.0231305","DOIUrl":"https://doi.org/10.1063/5.0231305","url":null,"abstract":"Spin oscillators relying on ferromagnetic (FM) materials have been limited to frequency generation in the range of only a few gigahertz. In contrast, antiferromagnetic (AFM) material-based oscillators have a potential for beyond gigahertz range oscillations. However, the use of AFM oscillators is limited due to challenges in detecting and controlling magnetic orientation. This arises from the inherent lack of significant net magnetization in AFMs. This work focuses on exploring the dynamic characteristics of a spin Hall nano-oscillator (SHNO) that addresses these challenges by leveraging the inter-layer exchange interaction between AFM and FM layers. The proposed design demonstrates stable and power-efficient oscillation in the FM layer, relying on the dynamics of the AFM layer. The proposed AFM–FM-based SHNO design achieves a maximum frequency of 16.4 GHz at ISOT = 180 μA. Furthermore, considering the thermal effects at 300 K, the stable oscillation frequency is achieved at 15.94 GHz. The proposed device exhibits robust and tunable oscillations over a wide frequency range with a power consumption of 4 μW. Moreover, this oscillator achieves 3.35× and 2.44× higher oscillation frequency compared to spin torque nano-oscillators and conventional SHNO-based oscillators, respectively.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":4.0,"publicationDate":"2024-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142580398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Deep learning-assisted local resonance strategy for accurate internal damage imaging in composites 深度学习辅助局部共振策略，实现复合材料内部损伤的精确成像

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-11-04 DOI: 10.1063/5.0233476

Changyu Zhang, Yajie Hu, Mingxi Deng, Weibin Li

引用次数: 0

A ferroelectric capacitor with an asymmetric double-layered ferroelectric structure comprising a liquid-delivery MOCVD Pb(Zr, Ti)O3 layer and a sputter-deposited La-doped Pb(Zr, Ti)O3 for highly reliable FeRAM 一种具有非对称双层铁电结构的铁电电容器，包括用于高可靠性 FeRAM 的液体输送 MOCVD Pb(Zr, Ti)O3 层和溅射沉积 La 掺杂 Pb(Zr, Ti)O3 层

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-11-04 DOI: 10.1063/5.0230646

Wensheng Wang, Ko Nakamura, Masaaki Nakabayashi, Takashi Eshita, Kazuaki Takai, Kenkichi Suezawa, Mitsuaki Oikawa, Nozomi Sato, Soichiro Ozawa, Satoru Mihara, Yukinobu Hikosaka, Hitoshi Saito, Kouichi Nagai

{"title":"A ferroelectric capacitor with an asymmetric double-layered ferroelectric structure comprising a liquid-delivery MOCVD Pb(Zr, Ti)O3 layer and a sputter-deposited La-doped Pb(Zr, Ti)O3 for highly reliable FeRAM","authors":"Wensheng Wang, Ko Nakamura, Masaaki Nakabayashi, Takashi Eshita, Kazuaki Takai, Kenkichi Suezawa, Mitsuaki Oikawa, Nozomi Sato, Soichiro Ozawa, Satoru Mihara, Yukinobu Hikosaka, Hitoshi Saito, Kouichi Nagai","doi":"10.1063/5.0230646","DOIUrl":"https://doi.org/10.1063/5.0230646","url":null,"abstract":"We have developed a double-layered ferroelectric capacitor comprising a liquid-delivery metal–organic chemical vapor deposition-based Pb(Zr, Ti)O3 (PZT) lower layer and a sputter-deposited La-doped Pb(Zr, Ti)O3 (PLZT) upper layer. This structure is designed to achieve a large polarization in the stacked-type capacitor of FeRAM. Ferroelectric capacitors with noble metal electrodes, which are patterned by sputter-etching due to the difficulty of standard chemical reactive etching typically exhibit sloped sidewalls. Consequently, their polarization values, determined by the actual capacitor area, depend on their geometric shape. Our developed capacitor exhibits a 35% increase in polarization compared to an all-sputter-deposited PLZT capacitor. This improvement is due to the reduced total thickness of the developed capacitor achieved by simplifying the bottom electrode structure, which results in steeper capacitor sidewalls. Furthermore, our developed capacitor demonstrates excellent retention margin even after 3000 h of baking at 150 °C, and with a potential endurance of 1014 cycles as predicted by voltage acceleration measurements.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":4.0,"publicationDate":"2024-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142580392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Large electrocaloric effect by disorder regulated structure in BaTiO3-based system 基于 BaTiO3 的体系中的无序调控结构产生的巨大电致发光效应

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2024-11-04 DOI: 10.1063/5.0227301

Lei Xie, Gaochao Zhao, Jinquan Dou, Ruidong Yue, Min Zhang, Peng Tong, Jie Yang, Wenhai Song, Li-Hua Yin, Yuping Sun

引用次数: 0