Applied Physics Letters最新文献_第7页

An adaptive harmonic AFM probe with enhanced sensitivity for cellular imaging 一种增强细胞成像灵敏度的自适应谐波AFM探针

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-21 DOI: 10.1063/5.0274431

Ke Feng, Lei Yuan, Xianmin Zhang

{"title":"An adaptive harmonic AFM probe with enhanced sensitivity for cellular imaging","authors":"Ke Feng, Lei Yuan, Xianmin Zhang","doi":"10.1063/5.0274431","DOIUrl":"https://doi.org/10.1063/5.0274431","url":null,"abstract":"Accurate classification of cellular images plays an indispensable role in early cancer diagnosis. Based on signal enhancement, harmonic atomic force microscopy (AFM), distinguished by its high resolution, demonstrates unique advantages in rapid acquisition and analysis of cellular images. Traditional harmonic probes are generally designed without sufficient consideration of environmental and sample-induced interference on probe vibration. However, in cellular imaging, environmental perturbations and heterogeneous mechanical properties of samples can significantly compromise imaging quality. To address the challenge of precision imaging in multi-environment cellular studies, we have developed an adaptive harmonic atomic force microscopy (A-HAFM) probe capable of generating stable harmonic signals in both atmospheric and liquid environments, enabling high-resolution cellular imaging and precise cell classification. Experimental studies involving 3600 samples of human cervical epithelial cells and human cervical cancer cells with varying invasiveness (HeLa and SiHa) demonstrated that the A-HAFM probe achieved 52.17% improvement in amplitude response sensitivity compared to conventional AFM, along with 60% enhancement in imaging clarity, with classification accuracy for normal vs cancer cells improved by 7.97% and between cancer subtypes (HeLa/SiHa) increased by 12.73%. By precisely characterizing cellular substructures and identifying physiological signatures, this technology establishes a promising platform for cellular-level diagnosis and therapeutic evaluation of cardiovascular diseases, malignant tumors, and other critical illnesses.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"8 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144670107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Tunable THz response in cobalt ferrite via magnetic field modulation 通过磁场调制可调谐钴铁氧体的太赫兹响应

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-21 DOI: 10.1063/5.0273900

Zhen Zhou, Lvkang Shen, Xiaohua Xing, Keyu Tan, Die Zou, Qiankun Zhang, Rui Zhu, Zhiyong Wang, Jianquan Yao, Ming Liu, Jianing Chen, Liang Wu

{"title":"Tunable THz response in cobalt ferrite via magnetic field modulation","authors":"Zhen Zhou, Lvkang Shen, Xiaohua Xing, Keyu Tan, Die Zou, Qiankun Zhang, Rui Zhu, Zhiyong Wang, Jianquan Yao, Ming Liu, Jianing Chen, Liang Wu","doi":"10.1063/5.0273900","DOIUrl":"https://doi.org/10.1063/5.0273900","url":null,"abstract":"Despite significant advancements in terahertz (THz) generation and detection technologies, the practical deployment of portable THz systems remains constrained by existing modulator limitations, particularly stringent temperature requirements, inefficient thermal management, and high power consumption. Here, we demonstrate a breakthrough in magnetically controlled THz modulation using a CoFe2O4/MgO/F-Mica composite structure. The tunable optical response and dielectric properties of the composite under varying magnetic fields were systematically investigated via THz time-domain spectroscopy. Experimental results revealed a magnetic field-dependent THz transmission attenuation, with systematic suppression of transmission spectra proportional to the applied magnetic field intensity. A theoretical model accounting for external magnetic field variations was proposed, which agrees well with the experimental results regarding the imaginary component. Remarkably, the composite material realizes phase modulation simultaneously under magnetic field. This exceptional magnetic responsiveness significantly broadens the application potential of ferrites in the THz regime. These findings provide critical insights for designing tunable multifunctional THz magnetic devices in 6G communications, medical diagnostics, and nondestructive testing applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"12 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144670080","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of pulsed bias power on electron density modulation in inductively coupled plasma 脉冲偏置功率对电感耦合等离子体中电子密度调制的影响

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-21 DOI: 10.1063/5.0275598

Gwang-Seok Chae, Youbin Seol, Hee-Jung Yeom, Chanhee Son, Seunghun Lee, Jung-Hyung Kim, Hyo-Chang Lee

{"title":"Effect of pulsed bias power on electron density modulation in inductively coupled plasma","authors":"Gwang-Seok Chae, Youbin Seol, Hee-Jung Yeom, Chanhee Son, Seunghun Lee, Jung-Hyung Kim, Hyo-Chang Lee","doi":"10.1063/5.0275598","DOIUrl":"https://doi.org/10.1063/5.0275598","url":null,"abstract":"In this study, we investigate the temporal behavior of electron density in an inductively coupled plasma (ICP) subjected to pulsed radio frequency (RF) bias using a Fourier cutoff probe measurement. This diagnostic technique enables high temporal resolution measurements at a relevant timescale, which are essential for capturing the dynamic plasma response during bias modulation. Upon the initiation of bias pulse, a transient drop in electron density—referred to as electron suction—is observed, resulting from the rapid rise in bias voltage outpacing the measured plasma response. Notably, this behavior appears in both E-mode and H-mode conditions of inductively coupled plasma (ICP) discharges, indicating that it is independent of the specific discharge mode. Furthermore, a significant electron suction is observed as the time-averaged electron density decreases. This electron suction induced by the RF pulse can be interpreted through its correlation with plasma and sheath formation. These findings provide critical insight into the transient characteristics of pulsed plasmas and offer guidance for the development of next-generation plasma-based manufacturing technologies.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"9 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144670115","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect 利用内发光效应研究SiGeSn/GeSn量子阱中的电子能带对准

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-21 DOI: 10.1063/5.0280475

Justin Rudie, Huong Tran, Yang Zhang, Sylvester Amoah, Sudip Acharya, Hryhorii Stanchu, Mansour Mortazavi, Timothy A. Morgan, Gregory T. Forcherio, Greg Sun, Gregory Salamo, Wei Du, Shui-Qing Yu

{"title":"Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect","authors":"Justin Rudie, Huong Tran, Yang Zhang, Sylvester Amoah, Sudip Acharya, Hryhorii Stanchu, Mansour Mortazavi, Timothy A. Morgan, Gregory T. Forcherio, Greg Sun, Gregory Salamo, Wei Du, Shui-Qing Yu","doi":"10.1063/5.0280475","DOIUrl":"https://doi.org/10.1063/5.0280475","url":null,"abstract":"SiGeSn-based optoelectronic devices, which operate across a broad infrared wavelength range, have garnered significant attention. Among these, heterostructures incorporating quantum wells are particularly promising due to their enhanced carrier confinement. In such structures, the type of band alignment and the associated barrier heights are critical parameters, directly influencing device performance. In this work, we employ internal photoemission measurements to extract the effective barrier heights in a Si0.024Ge0.892Sn0.084/Ge0.882Sn0.118 single quantum well, which is pseudomorphically grown on a Ge0.9Sn0.1 buffer atop a Ge buffered Si substrate. The extracted effective barrier heights are approximately 22 ± 2 meV for electrons and 50 ± 2 meV for holes. Additionally, based on the IPE threshold energy of 555 ± 1 meV, we have experimentally identified a type-I band alignment between the GeSn well and SiGeSn barrier layers—an important finding for the design of efficient infrared photonic devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"83 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144670091","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhanced in-plane thermal conductivity of polar SrTiO3 by surface phonon polaritons within dual Reststrahlen band 双Reststrahlen带表面声子极化子增强极性SrTiO3的面内热导率

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-21 DOI: 10.1063/5.0280414

Tao Cheng, Huanhuan Zhao, Li Lin, Mingyi Ma, Linhua Liu, Jia-Yue Yang

{"title":"Enhanced in-plane thermal conductivity of polar SrTiO3 by surface phonon polaritons within dual Reststrahlen band","authors":"Tao Cheng, Huanhuan Zhao, Li Lin, Mingyi Ma, Linhua Liu, Jia-Yue Yang","doi":"10.1063/5.0280414","DOIUrl":"https://doi.org/10.1063/5.0280414","url":null,"abstract":"As device miniaturization advances, efficient nanoscale heat dissipation becomes increasingly critical. Surface phonon polaritons (SPhPs) offer fast, long-range channels for thermal transport. Dual Reststrahlen band materials such as SrTiO3 provide a broader SPhPs-supporting frequency range (Δω) and greater potential for enhancing SPhPs-mediated thermal conductivity (κ), yet their underlying mechanisms remain elusive. Herein, we analytically solve the SPhPs dispersion relations to investigate the influence of dual Reststrahlen bands on κ of SrTiO3, considering the effects of dielectric asymmetry (Δε) between the top and bottom surfaces of the membrane, temperature, and doping. We find that the low-frequency Reststrahlen band contributes more than two orders of magnitude higher κ than that outside the bands. Moreover, elevated temperatures and heavy doping reduce κ due to increased optical losses and diminished lattice polarization, particularly within the low-frequency Reststrahlen band. These findings complement the current understanding of SPhPs-mediated heat transport and suggest an alternative strategy for thermal management in nanoscale systems.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"675 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144670109","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Formation and optical properties of indium nanoparticle arrays for deep-UV plasmonics 深紫外等离子体中铟纳米粒子阵列的形成和光学性质

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-21 DOI: 10.1063/5.0271244

H. D. L. McKenna, B. Shrestha, E. Lu, H. Lott, I. Subedi, X. Chen, S. Hwang, D. Zakharov, N. J. Podraza, J. C. Yang, R. S. Goldman

引用次数: 0

Stress-tunable spin-wave dynamics in superellipse-shaped FeGa nanostructures 超椭圆形FeGa纳米结构的应力可调自旋波动力学

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-21 DOI: 10.1063/5.0278169

Eduardo Saavedra, Helmunt Vigo-Cotrina, Carlos Saji, David Laroze, Juan Escrig

引用次数: 0

Acoustic rainbow trapping effect of double corner states in higher-order topological insulators 高阶拓扑绝缘体双角态的声彩虹捕获效应

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-16 DOI: 10.1063/5.0273381

Dongfeng Sha, Rongli Wang, Jinlong Luo, Jian Huang, Hai Yang

引用次数: 0

Mechanically tunable Schottky diodes based on silicon microstructure arrays via flexoelectricity 基于柔性电硅微结构阵列的机械可调谐肖特基二极管

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-16 DOI: 10.1063/5.0278210

Kailu Wang, Lingtong Lv, Qianqian Ma, Gongxi Zhang, Shengping Shen

{"title":"Mechanically tunable Schottky diodes based on silicon microstructure arrays via flexoelectricity","authors":"Kailu Wang, Lingtong Lv, Qianqian Ma, Gongxi Zhang, Shengping Shen","doi":"10.1063/5.0278210","DOIUrl":"https://doi.org/10.1063/5.0278210","url":null,"abstract":"Silicon is the most widely used semiconductor material, yet its centrosymmetric crystal structure makes seamless interaction between mechanical stimuli and electronic functionality challenging. Flexoelectricity—an electromechanical coupling inherent in all types of crystals—offers a solution by leveraging strain gradient-induced polarization to modulate electronic behavior. In this study, silicon microfabrication techniques are integrated with flexoelectricity to realize tunable Schottky diodes. Microstructure arrays fabricated on p-type silicon generate substantial strain gradients under macroscopic compression without relying on nanoscale probes. The strain gradients induce polarization at the metal–semiconductor interface, modulating the Schottky barrier height and thereby enabling mechanical tuning of the diode's electrical properties. The results herein demonstrate that macroscopic loading can effectively regulate the current–voltage (I–V) characteristics. This work bridges the gap between the flexoelectric effect and practical semiconductor applications, paving the way for next-generation smart materials and adaptive electronic devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"94 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144639701","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Revealing the nature of frequency-dependent breakdown characteristics for typical polymer insulating films 揭示了典型聚合物绝缘膜频率相关击穿特性的本质

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-16 DOI: 10.1063/5.0275884

Jingyu Deng, Qian Wang, Ying Zhou, Hangyue Mei, Xidong Liang, Chao Wu

{"title":"Revealing the nature of frequency-dependent breakdown characteristics for typical polymer insulating films","authors":"Jingyu Deng, Qian Wang, Ying Zhou, Hangyue Mei, Xidong Liang, Chao Wu","doi":"10.1063/5.0275884","DOIUrl":"https://doi.org/10.1063/5.0275884","url":null,"abstract":"Polymer dielectrics are critical for the reliable operation of electrical equipment under high field strength and high frequency. The degradation of breakdown performance at high-frequency AC fields has been noticed in polymer dielectrics, while the underlying mechanism remains unrevealed. Here, systematic experiments as well as first-principles calculations are combined to illustrate the correlation between the intrinsic material properties and the electrical insulating performance, including the energy bandgap Eg, glass transition temperature Tg, and dielectric dissipation factor tanδ. The results demonstrate that Eg predominantly governs the intrinsic DC breakdown strength, tanδ is the key driver of the heat generation under high-frequency conditions, and Tg underpins the heat endurance. They together determine the frequency-dependent breakdown performance. This research provides insights into the core intrinsic factors of high-frequency insulation reliability and offers guidance for selecting quantifiable and intrinsic proxy properties for the design and development of polymer-based insulating polymers.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"280 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144639804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0