Applied Physics Letters最新文献_第7页

Megahertz cycling of ultrafast structural dynamics enabled by nanosecond thermal dissipation

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-03-25 DOI: 10.1063/5.0266507

Till Domröse, Leonardo da Camara Silva, Claus Ropers

{"title":"Megahertz cycling of ultrafast structural dynamics enabled by nanosecond thermal dissipation","authors":"Till Domröse, Leonardo da Camara Silva, Claus Ropers","doi":"10.1063/5.0266507","DOIUrl":"https://doi.org/10.1063/5.0266507","url":null,"abstract":"Light–matter interactions are of fundamental scientific and technological interest. Ultrafast electron microscopy and diffraction with combined femtosecond-nanometer resolution elucidate the laser-induced dynamics in structurally heterogeneous systems. These measurements, however, remain challenging due to the brightness limitation of pulsed electron sources, leading to an experimental trade-off between resolution and contrast. Larger signals can most directly be obtained by higher repetition rates, which, however, are typically limited to a few kilohertz by the thermal relaxation of thin material films. Here, we combine nanometric electron beam probing with sample support structures tailored to facilitate rapid specimen cooling. Optical cycling of a charge-density wave transformation enables quantifying the mean temperature increase induced by pulsed laser illumination. Varying the excitation fluence and repetition rate, we gauge the impact of excitation confinement and efficient dissipation on the heat diffusion in different sample designs. In particular, a thermally optimized support can dissipate average laser intensities of up to 200 μW/μm2 within a few nanoseconds, allowing for reversible driving and probing of the CDW transition at a repetition rate of 2 MHz. Sample designs tailored to ultrafast measurement schemes will thus extend the capabilities of electron diffraction and microscopy, enabling high-resolution investigations of structural dynamics.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"48 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143703557","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Uncovering the modest hole mobility for the intrinsic single crystal CsPbBr3 by variable-temperature time of flight measurement

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-03-25 DOI: 10.1063/5.0246201

Hao Yan, Gang Cao, Junqiang Wang, Chengqian Zhong, Shaohan Wang, Juan Qin, Fangxiong Tang, Minghao Cui, Yike Luo, Wenzhen Wang, Yan Zhu, Junfeng Chen, Run Xu, Linjun Wang

{"title":"Uncovering the modest hole mobility for the intrinsic single crystal CsPbBr3 by variable-temperature time of flight measurement","authors":"Hao Yan, Gang Cao, Junqiang Wang, Chengqian Zhong, Shaohan Wang, Juan Qin, Fangxiong Tang, Minghao Cui, Yike Luo, Wenzhen Wang, Yan Zhu, Junfeng Chen, Run Xu, Linjun Wang","doi":"10.1063/5.0246201","DOIUrl":"https://doi.org/10.1063/5.0246201","url":null,"abstract":"CsPbBr3 single crystal is a promising candidate for room temperature radiation detector. However, the experimental mobilities reported exhibit considerable discrepancy, ranging widely from 10 to 4500 cm2/(V · s) at room temperature. Here, vertical Bridgman grown CsPbBr3 single crystal has been used to measure the mobility accurately using pulse-biased time-of-flight method. The hole mobility for CsPbBr3 at room temperature is modest to be around 25 cm2/(V · s). The value of the corresponding power-law index n for hole mobility on temperature (μ ∼ T-n) is around −1.23 in the range of 155–350 K, which is well consistent with the previous FET and Hall effect measurements, as well as theoretical calculations. The polar optical phonon rather than acoustic phonon is confirmed to be responsible for scattering carriers at room temperature. Our study gives solid evidence on the modest mobility in the intrinsic (not dominated by defects) CsPbBr3 semiconductor, which may limit the application of CsPbBr3 in high flux photon counting detectors.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"25 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143703401","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhancing the circular photogalvanic effect in double Weyl semimetals via symmetry breaking 通过对称性破缺增强双韦尔半金属中的环形光电效应

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-03-25 DOI: 10.1063/5.0257016

Tongshuai Zhu, Hao Ni, Dinghui Wang, Zhilong Yang, Guohui Zhan, Baojun Wei

引用次数: 0

Polarization-dependent spin wave channels in antiferromagnetic magnonic crystals

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-03-25 DOI: 10.1063/5.0256440

Zhan Lv, Zhi-ming Yan, Zhi-xiong Li, Xi-guang Wang, Yao-zhuang Nie, Qing-lin Xia, Xiu-feng Han, Guang-hua Guo

引用次数: 0

Morphological and strain engineering of SiGe cladded channels for stacked nanowire transistors

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-03-25 DOI: 10.1063/5.0243463

Yanpeng Song, Guangxing Wan, Xiaomeng Liu, Junjie Li, Hailing Wang, Xinhe Wang, Kuanrong Hao, Z. Bai, Xiangsheng Wang, Zhenzhen Kong, Junfeng Li, Jun Luo, Yongkui Zhang, Huilong Zhu, Chao Zhao, Guilei Wang

{"title":"Morphological and strain engineering of SiGe cladded channels for stacked nanowire transistors","authors":"Yanpeng Song, Guangxing Wan, Xiaomeng Liu, Junjie Li, Hailing Wang, Xinhe Wang, Kuanrong Hao, Z. Bai, Xiangsheng Wang, Zhenzhen Kong, Junfeng Li, Jun Luo, Yongkui Zhang, Huilong Zhu, Chao Zhao, Guilei Wang","doi":"10.1063/5.0243463","DOIUrl":"https://doi.org/10.1063/5.0243463","url":null,"abstract":"This paper presents a comprehensive study of silicon germanium (SiGe) cladded channels for stacked nanowires (NWs), focusing on morphological control and strain engineering to enhance device performance. High-resolution transmission electron microscopy (TEM) was used to characterize the Si NWs and SiGe cladding morphology. The results demonstrate that the morphology of SiGe cladding can be controlled by adjusting the high-temperature H2 baking conditions, leading to shapes such as triangular, circular, and hexagonal. Technology computer-aided design simulations and geometric phase analysis of TEM images revealed that the maximum compressive stress of SiGe cladding is 3 GPa, corresponding to a compressive strain of 2.48%, which significantly enhances hole mobility. Electrical performance tests and simulations on p-type metal–oxide–semiconductor field-effect transistor devices with different morphologies showed excellent short-channel effect control, with a subthreshold swing (SS) of approximately 70 mV/dec and a drain-induced barrier lowering of only 40 mV/V. These findings provide valuable guidelines for fabricating high-quality SiGe channels with controlled structures, enabling the realization of high carrier mobilities in future devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"57 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143703399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Loss tangent fluctuations due to two-level systems in superconducting microwave resonators

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-03-25 DOI: 10.1063/5.0253375

André Vallières, Megan E. Russell, Xinyuan You, David A. Garcia-Wetten, Dominic P. Goronzy, Mitchell J. Walker, Michael J. Bedzyk, Mark C. Hersam, Alexander Romanenko, Yao Lu, Anna Grassellino, Jens Koch, Corey Rae H. McRae

{"title":"Loss tangent fluctuations due to two-level systems in superconducting microwave resonators","authors":"André Vallières, Megan E. Russell, Xinyuan You, David A. Garcia-Wetten, Dominic P. Goronzy, Mitchell J. Walker, Michael J. Bedzyk, Mark C. Hersam, Alexander Romanenko, Yao Lu, Anna Grassellino, Jens Koch, Corey Rae H. McRae","doi":"10.1063/5.0253375","DOIUrl":"https://doi.org/10.1063/5.0253375","url":null,"abstract":"Superconducting microwave resonators are critical to quantum computing and sensing technologies. Additionally, they are common proxies for superconducting qubits when determining the effects of performance-limiting loss mechanisms such as from two-level systems (TLSs). The extraction of these loss mechanisms is often performed by measuring the internal quality factor Qi as a function of power or temperature. In this work, we investigate large temporal fluctuations of Qi at low powers over periods of 12–16 h (relative standard deviation σQi/Qi=13%). These fluctuations are ubiquitous across multiple resonators, chips, and cooldowns. We are able to attribute these fluctuations to variations in the TLS loss tangent due to two main indicators. First, measured fluctuations decrease as power and temperature increase. Second, for interleaved measurements, we observe correlations between low- and medium-power Qi fluctuations and an absence of correlations with high-power fluctuations. Agreement with the TLS loss tangent mean is obtained by performing measurements over a time span of a few hours. We hypothesize that, in addition to decoherence, due to coupling to individual near-resonant TLS, superconducting qubits are affected by these observed TLS loss tangent fluctuations.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"215 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143703405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Study on the difference in formation mechanism and demagnetization process between core–shell and reverse core–shell structures of sintered Nd-Fe-B magnets diffused with Tb 掺杂铽元素的烧结钕铁硼磁体的核壳结构和反核壳结构的形成机制和退磁过程差异研究

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-03-25 DOI: 10.1063/5.0247741

Wendi Zhang, Dunbo Yu, Weibin Cui, Xiaojun Sun, Yuanfei Yang, Xiao Lin, Qingjia Wang, Yang Luo, Zilong Wang

{"title":"Study on the difference in formation mechanism and demagnetization process between core–shell and reverse core–shell structures of sintered Nd-Fe-B magnets diffused with Tb","authors":"Wendi Zhang, Dunbo Yu, Weibin Cui, Xiaojun Sun, Yuanfei Yang, Xiao Lin, Qingjia Wang, Yang Luo, Zilong Wang","doi":"10.1063/5.0247741","DOIUrl":"https://doi.org/10.1063/5.0247741","url":null,"abstract":"During the grain boundary diffusion (GBD) of Tb, the core–shell and reverse core–shell structures are the two main microstructures influencing the magnetic properties of the sintered Nd-Fe-B magnets. These two microstructures are all composed of the (Nd, Tb)2Fe14B phase, but the formation mechanisms are different. The difference in formation mechanism of the core–shell and reverse core–shell structures was studied by quenching the magnets at different temperatures and holding times. The (Nd, Tb)2Fe14B shell of the core–shell structure is the precondition for forming the reverse core–shell structure. The triple-junction phases (TJPs) area change proves that the Nd elements diffuse from the TJPs to the surface of the (Nd, Tb)2Fe14B shell to form the Tb-poor shell in the reverse core–shell structure and the Gaussian distribution of Tb in the shell of the core–shell structure. In addition, the difference in the Tb content distribution leads to different demagnetization processes, resulting in the opposite effect of these two microstructures on the coercivity. The GBD aims to increase the entire coercivity by enhancing the surface anisotropy field (HA), such as the Tb-rich shell for the grains and the Tb-rich surface (∼200 μm) for the magnets. Therefore, for the reverse core–shell structure forming in the surface of the magnets, the surface with a low HA decreases the coercivity of the grains, reducing the coercivity of the magnets.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"99 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143703402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Temperature-dependent defect dipoles polarization of (La, Nb) co-doped TiO2/PEI microwave absorption materials

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-03-25 DOI: 10.1063/5.0260963

Xiao-Bin Zhou, Wen-Wen Wu, Rui Li, Zhuo Wang, Yue-Chan Song, Lu-lu Han, Wen-Peng Liao, Li-Ling Liu, Zhen-Hao Han, Xiao-Ming Chen, Peng Liu

{"title":"Temperature-dependent defect dipoles polarization of (La, Nb) co-doped TiO2/PEI microwave absorption materials","authors":"Xiao-Bin Zhou, Wen-Wen Wu, Rui Li, Zhuo Wang, Yue-Chan Song, Lu-lu Han, Wen-Peng Liao, Li-Ling Liu, Zhen-Hao Han, Xiao-Ming Chen, Peng Liu","doi":"10.1063/5.0260963","DOIUrl":"https://doi.org/10.1063/5.0260963","url":null,"abstract":"Point defect engineering has emerged as a key strategy to pursue efficient microwave absorption (MA) by effectively balancing impedance matching and polarization loss. Nevertheless, the detailed interplay between the temperature-driven dielectric relaxation characteristics and the absorption dissipation mechanisms remains an area that requires deeper exploration. Here, (La0.5Nb0.5)xTi1-xO2/polyetherimide (x = 0, 0.25%, 0.5%, and 1%) composites were prepared by co-doping TiO2 with donor (Nb5+) and acceptor (La3+) ions. As the concentration of point dipoles increases, the enhanced polarization loss significantly amplifies MA dissipation, demonstrating substantial potential for high-temperature applications at x = 0.5%. Notably, the point dipole polarization model provides a more comprehensive explanation of the relaxation time (τ), activation energy (Wη), and T. This behavior is attributed to strong polarization loss resulting from short-range electronic motion suppressed by those defect clusters, which provides a theoretical foundation for further understanding the mechanisms of microwave dissipation and high-temperature absorption potential.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"14 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143703416","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Spin-orbit torque switching in Co/Ni multilayers with strong domain wall pinning

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-03-25 DOI: 10.1063/5.0256651

Quwen Wang, Zetong Li, Qian Zhao, Bin He, Tengfei Zhang, Zimu Li, Chenbo Zhao, Jianbo Wang, Qingfang Liu, Guoqiang Yu, Jinwu Wei

引用次数: 0

Bouncing–pinning criterion for a drop impacting on a superhydrophobic surface

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-03-25 DOI: 10.1063/5.0251444

K. K. Krishnaram, Sharma Rahul, P. T. Naveen, A. R. Harikrishnan

引用次数: 0