Applied Physics Letters最新文献_第7页

Multi-band nonreciprocal thermal radiation based on Weyl semimetals with epsilon-near-zero multilayers

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-02-24 DOI: 10.1063/5.0249362

Yu Chen Li, Shi Hui Fu, Qi Weng, Yang Xuan Ou, Zhen Kun Ding, Jia Hu, Jian Shen, Chao Yang Li

{"title":"Multi-band nonreciprocal thermal radiation based on Weyl semimetals with epsilon-near-zero multilayers","authors":"Yu Chen Li, Shi Hui Fu, Qi Weng, Yang Xuan Ou, Zhen Kun Ding, Jia Hu, Jian Shen, Chao Yang Li","doi":"10.1063/5.0249362","DOIUrl":"https://doi.org/10.1063/5.0249362","url":null,"abstract":"Although various nonreciprocal thermal emitters have been suggested to break the balance between absorption and emission, few structures can achieve strong nonreciprocity in more than three bands. To break this constraint, we propose a nonreciprocal thermal emitter device based on GaN/AIN/SiC/Weyl semimetal (WSM), which is capable of three discrete pairs of near-perfect absorption and emission, leading to perfect hexa-band strong nonreciprocal radiation. The enhanced nonreciprocal thermal radiation is attributed to the field enhancement of epsilon-near-zero layer and nonreciprocal guided resonances excited in the WSM film. By studying the magnetic field distribution, the physical mechanism of multi-band nonreciprocal thermal radiation is revealed, which can be verified by the impedance matching theory. Furthermore, the dependence of the structure dimensions and the axial vector b of the Weyl semimetal on the performance of the nonreciprocal radiation is investigated in detail. We believe that this work can provide an approach to the development of energy conversion devices and frequency selective detectors.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"6 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143486466","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Tunable sliding ferroelectricity in two-dimensional van der Waals RuX2 (X = Cl, Br, and I) multiferroic layers

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-02-24 DOI: 10.1063/5.0249647

Peng Han, Jingtong Zhang, Xumin Chen, Jie Wang

{"title":"Tunable sliding ferroelectricity in two-dimensional van der Waals RuX2 (X = Cl, Br, and I) multiferroic layers","authors":"Peng Han, Jingtong Zhang, Xumin Chen, Jie Wang","doi":"10.1063/5.0249647","DOIUrl":"https://doi.org/10.1063/5.0249647","url":null,"abstract":"Two-dimensional (2D) van der Waals (vdW) materials offer vast potential for designing ferroelectrics with desired properties through simple layer stacking. Here, based on first principles, we demonstrate that the vdW layered crystals RuX2 (X = Cl, Br, and I) are a class of 2D multiferroic sliding ferroelectrics. The stacking of two magnetic RuX2 monolayers with the same orientation breaks the spatial inversion symmetry, resulting in a stable vertical polarization. In addition, the direction of polarization can be reversed through slight interlayer sliding, in which it only needs to overcome the small energy barrier of 7.16 meV. Among these layered crystals, the bilayer RuI2 not only possesses a remarkable sliding ferroelectricity of 0.49 pC/m but also exhibits stable long-range magnetic order due to its large magnetic anisotropy energy. When the RuI2 stack is increased to trilayers, the polarization significantly increases to 1.03 pC/m, which is much larger than that of its bilayer structure. Furthermore, the application of compressive strain results in a substantial increase in vertical polarization. This work provides an efficient method for designing 2D multiferroic sliding ferroelectric materials by stack engineering.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"1 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143486487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ultrafast 0D/1D ZnO/CuO photodetector in nanosecond scale by engineering the type-II heterostructure

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-02-24 DOI: 10.1063/5.0253662

Yani Li, Heyuan Zheng, Jinhua Li, Kaixi Shi, Xuan Fang, Yunping Lan, Zhenfeng Jiang

{"title":"Ultrafast 0D/1D ZnO/CuO photodetector in nanosecond scale by engineering the type-II heterostructure","authors":"Yani Li, Heyuan Zheng, Jinhua Li, Kaixi Shi, Xuan Fang, Yunping Lan, Zhenfeng Jiang","doi":"10.1063/5.0253662","DOIUrl":"https://doi.org/10.1063/5.0253662","url":null,"abstract":"Zero-dimensional/one-dimensional (0D/1D) heterojunctions have excellent potential in the field of optoelectronic devices due to the synergy effect of different dimensions. Most reported 0D/1D heterojunction photodetectors only focus on optimizing the separation efficiency of photogenerated carriers at the interface. However, the carriers within the quantum dots (QDs) cannot be transferred to the electrodes, resulting in recombination of photogenerated carriers separated at the interface. Therefore, the response speed of most 0D/1D heterojunction photodetectors is still limited to the order of seconds (s) and milliseconds (ms). In our work, we demonstrate a nanosecond (ns) scale ZnO/CuO heterojunction photodetector with efficient photoelectric conversion by engineering the type-II 0D/1D heterojunction interface. Herein, the surface defect states of ZnO QDs are deliberately introduced as “electrons storage pool” to suppress carrier recombination and further promote separation, which has been confirmed by photoluminescence (PL) and time-resolved photoluminescence (TRPL). As a result, the photodetector exhibited excellent performance with ultrafast response speed of 20 ns, responsivity of 213 A/W, and detectivity of 2.95 × 1011 Jones, respectively. This defect related interface engineering provides a feasible strategy for the development of high-performance 0D/1D heterojunction photodetectors.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"5 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143486489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Band engineering for large perpendicular magnetocrystalline anisotropy and low magnetic Gilbert damping constant by anion substitution at Fe/MgO interface

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-02-24 DOI: 10.1063/5.0248379

Y.-N. Apriati, K. Nawa, K. Nakamura

引用次数: 0

Impact of growth temperature on heterostructure interface steepness in ultraviolet-B AlGaN-based laser diodes

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-02-24 DOI: 10.1063/5.0242536

Takumu Saito, Rintaro Miyake, Ryoya Yamada, Yoshinori Imoto, Shundai Maruyama, Yusuke Sasaki, Shogo Karino, Sho Iwayama, Hideto Miyake, Koichi Naniwae, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya

{"title":"Impact of growth temperature on heterostructure interface steepness in ultraviolet-B AlGaN-based laser diodes","authors":"Takumu Saito, Rintaro Miyake, Ryoya Yamada, Yoshinori Imoto, Shundai Maruyama, Yusuke Sasaki, Shogo Karino, Sho Iwayama, Hideto Miyake, Koichi Naniwae, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya","doi":"10.1063/5.0242536","DOIUrl":"https://doi.org/10.1063/5.0242536","url":null,"abstract":"This study investigates the steepness of the heterostructure interface between the p-side optical-waveguide and electron blocking layer (EBL) in ultraviolet-B (UV-B) laser diodes (LDs), focusing on the impact of growth temperature. The results revealed that lowering the growth temperature significantly reduced the thickness of the “unintended compositionally graded layer” a diffusion layer formed at the interface through solid-phase diffusion. However, a bottleneck also existed in LDs with extremely steep interfaces, where the diode characteristics could not be obtained due to the device's high resistance. This study highlights the trade-off between the steepness of the interfaces in the AlGaN heterostructure and diode performance, indicating the need for further optimization to achieve high-performance UV-B LDs. Specifically, future efforts should focus on refining growth conditions to reduce impurity concentrations resulting from low-temperature growth and controlling the thickness of individual layers, such as the EBL, to address high resistance and achieve high-performance UV-B LDs.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"32 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143486496","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electron thermometry for Si MOS inversion layer using proximity nano-transistor and its application to Joule-heating experiment

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-02-24 DOI: 10.1063/5.0239500

Hossain Md Nayem, Masahiro Hori, Katsuhiko Nishiguchi, Yukinori Ono

引用次数: 0

Valley-contrasting physics, topological bands, and Dirac cone in the charge density wave phase of a 1T-MoS2 monolayer

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-02-24 DOI: 10.1063/5.0252317

Lv Qiu, Chunhua Zeng, Xiaobo Feng, Lin Zhuang, Wuming Liu, Zhaoming Fu

引用次数: 0

A multi-degree-of-freedom model-based method for Young's modulus determination of soft tissue by resonance spectroscopy

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-02-24 DOI: 10.1063/5.0252527

Yujie Hu, Kecai Lu, Zhuangyu Li, Daming Zhou

引用次数: 0

Strain-induced Kramers–Weyl phase in III–V zinc blende systems

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-02-24 DOI: 10.1063/5.0253139

Denis Aglagul, Jian Shi

引用次数: 0

Efficient quantum frequency conversion of ultra-violet single photons from a trapped ytterbium ion

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-02-24 DOI: 10.1063/5.0241469

Seungwoo Yu, Kyungmin Lee, Sumin Park, Kyunghye Kim, Junhong Goo, Jeonghyun Park, Taehyun Kim

{"title":"Efficient quantum frequency conversion of ultra-violet single photons from a trapped ytterbium ion","authors":"Seungwoo Yu, Kyungmin Lee, Sumin Park, Kyunghye Kim, Junhong Goo, Jeonghyun Park, Taehyun Kim","doi":"10.1063/5.0241469","DOIUrl":"https://doi.org/10.1063/5.0241469","url":null,"abstract":"Ion trap system is a leading candidate for quantum information science benefitting from its long coherence time, high-fidelity gate operations. In addition, the ion photon entanglement provides a versatile tool to realize quantum networks by generating an ideal pair of a stationary memory qubit and a flying communication qubit. Rapid developments in nonlinear quantum frequency conversion techniques have enhanced the potential for constructing a trapped ion quantum network via optical fiber connections. The generation of long-distance entanglement has been demonstrated with ions such as Ca+ and Ba+, which emit photons in visible or near-infrared range naturally. On the other hand, as the qubit-native photons reside in ultra-violet (UV) spectrum, the Yb+ ion has not been considered as a strong competitor for telecommunication qubits despite extensive research on it. Here, we demonstrate an efficient difference-frequency conversion of UV photons, emitted from a trapped Yb+ ion, into a visible range. We provide experimental evidence that confirms the converted photons are radiated from the Yb+ ion. Our results provide a crucial step toward realizing a long-distance trapped ion quantum network based on Yb+ ions through quantum frequency conversion.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"65 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143486483","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0