Applied Physics Letters最新文献_第7页

Temperature and strain effects on polarization switching in HfO2 ferroelectrics based on first-principles study 基于第一性原理研究温度和应变对HfO2铁电体极化开关的影响

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-05 DOI: 10.1063/5.0345141

Pengjia Jiang,Xinpeng Mu,Jia Ma,Ran Xiong,Jie Jiang,Binjian Zeng,Yichun Zhou,Yanyan Du,Qiong Yang

{"title":"Temperature and strain effects on polarization switching in HfO2 ferroelectrics based on first-principles study","authors":"Pengjia Jiang,Xinpeng Mu,Jia Ma,Ran Xiong,Jie Jiang,Binjian Zeng,Yichun Zhou,Yanyan Du,Qiong Yang","doi":"10.1063/5.0345141","DOIUrl":"https://doi.org/10.1063/5.0345141","url":null,"abstract":"HfO2-based ferroelectric materials have attracted intense interest due to their appealing potential in next-generation nonvolatile memories. However, the polarization switching mechanism, which is susceptible to the external factors, remains poorly understood. Among the factors, the temperature and epitaxial strain play important roles on the dynamic polarization switching of HfO2 ferroelectrics. In this work, we systematically investigate the effects of temperature and in-plane strain on the polarization switching behavior of HfO2 by combining the density functional theory and ab initio molecular dynamics. It is found that increasing temperature reduces both the spontaneous polarization and the switching electric fields of HfO2 no matter for the switching pathways with oxygen atoms passing through the Hf atomic planes (T-pathway) or not (N-pathway). Compressive strain decreases the energy barrier and switching electric field of the T-pathway polarization switching, whereas tensile strain substantially reduces those of the N-pathway switching. These findings provide atomistic insights for the understanding and rational tailoring of the polarization switching characteristics of HfO2-based ferroelectrics.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"41 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149089946","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Sliding-ferroelectric order imprinted onto excitonic and valley responses in van der Waals heterostructures 范德华异质结构中激子和谷响应的滑动铁电有序印迹

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-05 DOI: 10.1063/5.0338772

Shikun Hou,Xing Xie,Shaofei Li,Junying Chen,Xian Zhang,Siyu Zhang,Jun He,Zongwen Liu,Jian-Tao Wang,Yanping Liu

{"title":"Sliding-ferroelectric order imprinted onto excitonic and valley responses in van der Waals heterostructures","authors":"Shikun Hou,Xing Xie,Shaofei Li,Junying Chen,Xian Zhang,Siyu Zhang,Jun He,Zongwen Liu,Jian-Tao Wang,Yanping Liu","doi":"10.1063/5.0338772","DOIUrl":"https://doi.org/10.1063/5.0338772","url":null,"abstract":"Ferroelectricity driven by interlayer sliding provides a distinct route to nonvolatile control in van der Waals (vdW) heterostructures, yet resolving stacking-dependent ferroelectric states and their local interfacial consequences remains challenging. Here, we report that bilayer 1T′-ReS2 (2L-ReS2) hosts distinct AB and BA stacking configurations associated with opposite sliding-ferroelectric polarizations, identified through symmetry-sensitive structural and optical characterization. When coupled to monolayer MoSe2, these stacking-associated ferroelectric states produce pronounced redistribution between neutral and charged exciton emission, providing a sensitive optical fingerprint of the local interfacial electrostatic environment. Their distinct signatures further extend to valley-resolved magneto-optical responses, including domain-dependent circular-polarization evolution and effective charged-exciton g-factors of −3.8 ± 0.09 and −6.7 ± 0.18. First-principles calculations based on the experimentally identified AB and BA configurations reveal stacking-selective interfacial charge redistribution and corresponding shifts of the MoSe2-derived band edges, providing a microscopic basis for the observed excitonic reconstruction. These results establish sliding-ferroelectric order as a buried yet optically readable interfacial degree of freedom and identify stacking registry as a nonvolatile handle for controlling excitonic and valley responses in vdW heterostructures.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"147 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149090008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Pressure-induced mode transition and physical model for a suspended hybrid tactile sensor 悬挂式混合触觉传感器的压力诱导模式转换及物理模型

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-05 DOI: 10.1063/5.0307856

Mujeeb Yousuf,Pushpapraj Singh,Muhammad Mustafa Hussain

引用次数: 0

Anisotropic magnetic damping and interface spin transport in fully epitaxial cubic Fe74V26/Pt heterostructure 全外延立方Fe74V26/Pt异质结构的各向异性磁阻尼和界面自旋输运

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-05 DOI: 10.1063/5.0347349

Yangping Wang,Hongyan Zhou,Zhenhua Li,Qingfeng Zhan

{"title":"Anisotropic magnetic damping and interface spin transport in fully epitaxial cubic Fe74V26/Pt heterostructure","authors":"Yangping Wang,Hongyan Zhou,Zhenhua Li,Qingfeng Zhan","doi":"10.1063/5.0347349","DOIUrl":"https://doi.org/10.1063/5.0347349","url":null,"abstract":"The directional control of magnetic damping and interfacial spin transport has emerged as a promising yet challenging route toward anisotropic spintronic devices. In this work, we investigated the magnetic damping and spin-pumping effect of fully epitaxial Fe74V26/Pt heterostructures by ferromagnetic resonance measurements along the easy and hard magnetization axes. Both the intrinsic damping αint of the Fe74V26 film and the effective spin mixing conductance Geff↑↓ of the heterostructure exhibit a pronounced anisotropy. The anisotropic αint may be associated with crystallographic-direction-dependent spin–orbit coupling based on magnetoresistance measurements. The directional dependence of Geff↑↓ indicates that the interfacial spin transport is inherently anisotropic. First-principles calculations trace this interfacial anisotropy predominantly to the Pt layer, where a pronounced directional character in the interfacial density of states is found. This anisotropy can influence the spin-dependent scattering at the interface, providing a consistent microscopic picture for the directional spin transport observed experimentally. These findings offer new insights into the interplay between interfacial electronic structure and spin transport in epitaxial magnetic heterostructures.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"8 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149089885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Role of Mn doping on polarization switching characteristics in orthorhombic KTN crystals Mn掺杂对正交KTN晶体极化开关特性的影响

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-05 DOI: 10.1063/5.0334572

Bohan Xing,Xiangda Meng,Minghui Cao,Xinyu Jin,Xuejie Sun,Yu Wang,Jinyu Ruan,Chengpeng Hu,Qingxin Meng,Peng Tan,Hao Tian

{"title":"Role of Mn doping on polarization switching characteristics in orthorhombic KTN crystals","authors":"Bohan Xing,Xiangda Meng,Minghui Cao,Xinyu Jin,Xuejie Sun,Yu Wang,Jinyu Ruan,Chengpeng Hu,Qingxin Meng,Peng Tan,Hao Tian","doi":"10.1063/5.0334572","DOIUrl":"https://doi.org/10.1063/5.0334572","url":null,"abstract":"Piezoelectric materials play a significant role in advanced precision electromechanical systems. The dynamic response of spontaneous polarization to external fields determines macroscopic piezoelectric performance. In this work, we provide a density functional theory (DFT) insight into the effects of dopants on polarization rotation characteristics, aiming to reveal the source of giant piezoelectric coefficients of Mn-doped potassium tantalate niobate (KTN) crystals. We reveal that Mn doping significantly reduces the orthorhombic(O)–tetragonal(T) switching barrier to a level lower than that of O–O switching. This allows for the O–T switching pathway, which is prohibited in pristine KTN. The larger change in the z-component polarization during the O–T switching, combined with the smooth free energy curve, results in a polarization change to energy variation ratio for Mn-doped KTN which is 2.09 times greater than that of pristine KTN. This leads to the giant piezoelectric responses in Mn-doped KTN crystals. The special O–T switching is induced by local z axis strain introduced by Mn doping, which enhances the tendency of the initial orthorhombic phase to transform toward the tetragonal structure and stabilizes the terminal tetragonal structure. Finally, we demonstrate that Fe-doped KTN still tends to exhibit O–O switching, indicating that not all valence-changing B-site dopants can induce the O–T switching that leads to high piezoelectric performance. Our results provide deeper insights into the role of dopant ions in piezoelectric responses, promoting the design and development of high-performance piezoelectric material.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"167 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149089886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A heterogeneous contact model for optimizing particle size ratio to achieve highly transparent YAG ceramics 采用非均相接触模型优化YAG高透明陶瓷的粒径比

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-05 DOI: 10.1063/5.0346933

Mengyuan Xu,Dongshun Chen,Lele Gao,Mingzhou Li,Ye Gu,Chao Xin,Wieslaw Strek,Robert Andrzej Tomala,Mariusz Stefanski,Vladimir Vasilyevich Osipov,Roman Nikolaevich Maksimov,Hao Chen,Le Zhang

{"title":"A heterogeneous contact model for optimizing particle size ratio to achieve highly transparent YAG ceramics","authors":"Mengyuan Xu,Dongshun Chen,Lele Gao,Mingzhou Li,Ye Gu,Chao Xin,Wieslaw Strek,Robert Andrzej Tomala,Mariusz Stefanski,Vladimir Vasilyevich Osipov,Roman Nikolaevich Maksimov,Hao Chen,Le Zhang","doi":"10.1063/5.0346933","DOIUrl":"https://doi.org/10.1063/5.0346933","url":null,"abstract":"Yttrium aluminum garnet (YAG) transparent ceramics, owing to their outstanding optical properties and thermal stability, are widely applied in lasers, optical windows, and other fields. Numerous studies have focused on the optimization of their preparation processes and performance, and many laws governing the relationship between ball-milling processes and optical quality have been established. However, the conclusions vary significantly across different studies. This variation is attributed to the differences in the input conditions of each study, such as the state of the precursor materials. In this study, based on the mass transport behavior during sintering densification, the direct effect of the precursor Y2O3/Al2O3 particle size, especially their corresponding ratio, instead of the ball-milling method, on the optical quality of YAG transparent ceramics was systematically explored. The optimal particle size ratio was established, and YAG transparent ceramics with an in-line transmittance of 84.3% at 800 nm were successfully fabricated. A new heterogeneous contact model was proposed to reveal the relationship between precursor powder particle size and optical performance of ceramics. This work provides a new perspective on optimizing precursor particle characteristics for fabricating high-performance transparent ceramics.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"483 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149089892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Scalable quaternary topological insulator for low-power spintronics 用于低功率自旋电子学的可伸缩四元拓扑绝缘体

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-05 DOI: 10.1063/5.0344386

Qi Zhang,Hanyuan Guo,Pengxiang Zhao,Xu Liu,Wei Gao,Baoshan Cui,Yalu Zuo,Xiaoxi Liu,Yang Ren,Li Xi

{"title":"Scalable quaternary topological insulator for low-power spintronics","authors":"Qi Zhang,Hanyuan Guo,Pengxiang Zhao,Xu Liu,Wei Gao,Baoshan Cui,Yalu Zuo,Xiaoxi Liu,Yang Ren,Li Xi","doi":"10.1063/5.0344386","DOIUrl":"https://doi.org/10.1063/5.0344386","url":null,"abstract":"Topological insulators (TIs) with spin-momentum-locked surface states exhibit high charge-to-spin (C2S) conversion efficiency. However, binary and ternary TIs are constrained by a narrow tunable composition window for their insulating bulk states, which limits spintronic performance due to interference from bulk conduction. This work reports the development of a high-quality quaternary TI, [Sb2Te3(5−t)/Bi2Se3(t)]4, fabricated via scalable magnetron sputtering. By tuning the Bi2Se3 layer thickness, the quaternary TI exhibits high resistivity and low carrier concentration, effectively suppressing bulk conduction across a broad tunable window. Over a wide Bi2Se3 thickness range (t = 0.2–1.5 nm, corresponding to 3%–23% Bi2Se3 content), a high spin Hall angle (θSH) of 0.4–0.99 is maintained. Furthermore, in heterostructures based on this quaternary TI, the critical magnetization switching current density drops to as low as 3.3 × 105 A/cm2, which is two orders of magnitude lower than that of heavy metal Pt. Owing to the large spin Hall angle, the quaternary TI also exhibits power consumption approximately 20 times lower than ternary TIs for t = 0.2–1.5 nm. These results confirm that scalable quaternary TIs enable low-power spintronic devices with enhanced efficiency and processing flexibility, paving the way for advanced spintronic applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"8 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149089896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Polarization-enhanced ultrafast carrier transfer dynamics in Ga2O3/WS2 heterojunctions Ga2O3/WS2异质结中极化增强的超快载流子转移动力学

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-05 DOI: 10.1063/5.0341727

Yuting Jiang,Yonghui Liu,Huaiqiang Zhang,John Robertson,Sheng Liu,Yuzheng Guo

引用次数: 0

Potassiophobic–potassiophilic bilayer carbon host design for stable potassium metal anodes 稳定金属钾阳极的疏钾-亲钾双层碳主体设计

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2026-10-05 DOI: 10.1063/5.0353118

Zheng Hu,Zhibin Li,Yiyu Tu,Jiannan Lei,Wenjie Mai,Jinliang Li

引用次数: 0

Bragg coherent diffraction x-ray imaging of nanoparticles with unknown orientation 取向未知纳米粒子的布拉格相干衍射x射线成像