Applied Physics Letters最新文献_第7页

Electronic properties of extended surface defects in homoepitaxial GaN diodes 同外延GaN二极管扩展表面缺陷的电子特性

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-23 DOI: 10.1063/5.0274143

Andrew J. Winchester, Valery Ortiz Jimenez, Dara Weiss, Curt A. Richter, Behrang H. Hamadani, Michael A. Mastro, Travis J. Anderson, Jennifer K. Hite, Sujitra Pookpanratana

{"title":"Electronic properties of extended surface defects in homoepitaxial GaN diodes","authors":"Andrew J. Winchester, Valery Ortiz Jimenez, Dara Weiss, Curt A. Richter, Behrang H. Hamadani, Michael A. Mastro, Travis J. Anderson, Jennifer K. Hite, Sujitra Pookpanratana","doi":"10.1063/5.0274143","DOIUrl":"https://doi.org/10.1063/5.0274143","url":null,"abstract":"GaN on GaN vertical power devices are promising for high voltage applications beyond Si and SiC. Developing GaN substrates with low defect densities for high-quality epitaxial growth has been an ongoing challenge. Consequently, extended defects are a concern for high power device performance and reliability and must be mitigated. In particular, newer ammonothermally grown GaN substrates with lower extended defect densities have not yet been evaluated as extensively as hydride vapor phase epitaxy GaN. Here, we identify different electrically active defects on epitaxial p-GaN layers grown on strain-patterned (dot-core) and ammonothermal GaN substrates. On dot-core substrates, “star” defects were observed that consist of pits and cracks, have an increased hole carrier density, display occupied bandgap states, and show reduced and variable forward bias currents. In contrast, on ammonothermal substrates, triangular patches were found on certain rough epitaxy ridges and show increased gap states along with a lower carrier density and reduced conductivity. The star and triangular defects likely correspond to threading dislocations and stacking faults, respectively, and may act as killer defects. As a result, p–i–n diode devices on ammonothermal substrates frequently exhibited poor reverse and forward bias behavior due to the random extended defect distribution that cannot be intentionally avoided as in patterned dot-core substrates, as well as different impurity defects in the epitaxy. Therefore, we have found that ammonothermal GaN substrates require tighter control over both point and extended defect distributions in order to achieve reliable high power electronic devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"18 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144693817","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Atomic layer deposition and characterization of scandium aluminum nitride 氮化铝钪原子层沉积及表征

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-23 DOI: 10.1063/5.0278222

Md. Mehedi Hasan Tanim, Md. Tanvir Hasan, Zhengwei Ye, Shubham Mondal, Jiangnan Liu, Kai Sun, Zetian Mi

引用次数: 0

2.87 kV/3.68 mΩ cm2 low forward voltage Ga2O3 vertical SBD with nitrogen-doped protecting ring and mesa termination 2.87 kV/3.68 mΩ cm2低正向电压Ga2O3垂直SBD，含氮保护环和平台端

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-23 DOI: 10.1063/5.0276560

Xueli Han, Xiaorui Xu, Zhengbo Wang, Hanchao Yang, Desen Chen, Yicong Deng, Duanyang Chen, Haizhong Zhang, Hongji Qi

引用次数: 0

Enhanced light–matter interaction and photodetection in TMDs using distributed Bragg reflectors (DBRs) 利用分布式Bragg反射器增强TMDs中的光-物质相互作用和光探测

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-23 DOI: 10.1063/5.0270842

Kritika Bhattacharya, Chumki Nayak, Suprovat Ghosh, Santanu Manna, Achintya Singha, Yordan Marchev Georgiev, Samaresh Das

{"title":"Enhanced light–matter interaction and photodetection in TMDs using distributed Bragg reflectors (DBRs)","authors":"Kritika Bhattacharya, Chumki Nayak, Suprovat Ghosh, Santanu Manna, Achintya Singha, Yordan Marchev Georgiev, Samaresh Das","doi":"10.1063/5.0270842","DOIUrl":"https://doi.org/10.1063/5.0270842","url":null,"abstract":"Over the past few years, the demand for high-performance optoelectronic devices has intensified, and the limitations of silicon have become a critical bottleneck. To overcome these constraints while ensuring compatibility with existing CMOS technology, the search for alternative materials has become imperative. Transition metal dichalcogenides (TMDs) are promising materials for advanced optoelectronic systems but suffer from inherently low light absorption, impeding their widespread commercial adoption. In this context, enhancing light–matter interaction in TMDs is not merely beneficial but essential for faster, more efficient, and multifunctional optoelectronic systems. This study systematically investigates and compares Si/SiO2 and distributed Bragg reflectors (DBRs) as substrate platforms to enhance TMDs-based photodetection, focusing on responsivity improvements. Experimental results demonstrate that DBRs enable a ∼9× enhancement in the Raman signal of layered WSe2 and a 20× increase in photoluminescence at 633 nm excitation. Moreover, the fabricated WSe2 and MoSe2 two-terminal devices on DBR exhibit a 5× and 10× boost in responsivity at 660 nm wavelength, respectively. A peak responsivity of 200 mA/W is achieved using DBR substrates, matching or surpassing values reported in previous studies. Finite-difference time-domain (FDTD) simulations provide critical insights into the mechanisms driving these enhancements, highlighting the role of optical interference and field confinement. These findings establish DBRs as scalable, high-performance substrates for integrating TMDs into next-generation photodetectors, paving the way for significant advancements in light harvesting and optoelectronic performance.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"143 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144693813","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Laser tweezers manipulation of diatom chloroplasts and intracellular viscosity evaluation 激光镊子操作硅藻叶绿体和细胞内粘度评价

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-23 DOI: 10.1063/5.0266103

Evgeny S. Vavaev, Julijana Cvjetinovic, Evgeny V. Lyubin, Yekaterina D. Bedoshvili, Nickolai A. Davidovich, Pavlos Lagoudakis, Andrey A. Fedyanin, Dmitry A. Gorin

{"title":"Laser tweezers manipulation of diatom chloroplasts and intracellular viscosity evaluation","authors":"Evgeny S. Vavaev, Julijana Cvjetinovic, Evgeny V. Lyubin, Yekaterina D. Bedoshvili, Nickolai A. Davidovich, Pavlos Lagoudakis, Andrey A. Fedyanin, Dmitry A. Gorin","doi":"10.1063/5.0266103","DOIUrl":"https://doi.org/10.1063/5.0266103","url":null,"abstract":"The advancement of optical tweezers has revolutionized biological research, enabling precise manipulation of microscopic objects. In this study, we applied optical tweezers to diatom algae, known for their intricate silica frustules, achieving precise manipulation of their cells and chloroplasts. We demonstrated the ability to trap and move chloroplasts within cells of diatom Coscinodiscus oculus-iridis without causing damage, revealing the role of cytoplasm in maintaining organelle connectivity and facilitating motion. Using optical tweezers, we measured intracellular viscosity across different cytoplasmic regions, revealing a broad range influenced by local environment and cell-to-cell variability. These values reflect the viscosity of an equivalent continuous medium that would produce the same viscous friction coefficient for chloroplast movement. Although these data likely overestimate the true cytoplasmic viscosity—due to boundary layer interactions and the influence of cytoplasmic strands—they provide valuable insight into intracellular mechanics. Additionally, the achieved manipulation of entire diatom cells, including cells undergoing division, highlights the mechanical resilience of their silica frustules under external forces. These findings not only advance our understanding of diatom biology but also lay the groundwork for applications in biomimetic materials, photonic systems, and environmental research.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"25 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144693819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Over 450 V breakdown voltage in diamond vertical Schottky barrier diodes with anodic self-aligned mesa termination 具有阳极自对准台面端接的金刚石垂直肖特基势垒二极管击穿电压超过450 V

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-23 DOI: 10.1063/5.0274905

Xixiang Zhao, Shumiao Zhang, Guoqing Shao, Qi Li, Genqiang Chen, Jiali Wang, Feng Wen, Yanfeng Wang, Hongxing Wang

引用次数: 0

Temperature-dependent characterization of piezoelectric, dielectric, and elastic properties in K0.61Na0.39NbO3 single crystals K0.61Na0.39NbO3单晶压电、介电和弹性特性的温度依赖性表征

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-23 DOI: 10.1063/5.0275822

Song Jin, Chengpeng Hu, Xiangda Meng, Xuejie Sun, Mingxuan Liu, Ming Qiu, Yining Dong, Peng Tan, Yu Wang, Jiazhi Wang, Hao Tian

{"title":"Temperature-dependent characterization of piezoelectric, dielectric, and elastic properties in K0.61Na0.39NbO3 single crystals","authors":"Song Jin, Chengpeng Hu, Xiangda Meng, Xuejie Sun, Mingxuan Liu, Ming Qiu, Yining Dong, Peng Tan, Yu Wang, Jiazhi Wang, Hao Tian","doi":"10.1063/5.0275822","DOIUrl":"https://doi.org/10.1063/5.0275822","url":null,"abstract":"Accurate and self-consistent measurement of the dielectric, piezoelectric, and elastic parameters of potassium-sodium niobate (K1−xNaxNbO3, KNN) single crystals is essential for both theoretical studies and the development of KNN-based device applications. In this study, K0.61Na0.39NbO3 single crystals demonstrate a markedly higher shear-mode piezoelectric coefficient d15 (210.34 pC/N) compared to the longitudinal coefficient d33 (60.36pC/N) and thus classified as “rotator” ferroelectric crystals. The crystals exhibit exceptional thermal stability in the orthorhombic phase, with d33 increasing by only ∼1% over a wide temperature range from −100 to 150 °C. Additionally, calculations of piezoelectric coefficients along the [001] direction show that ferroelectric domain contributions account for over 40% of the total piezoelectric response at room temperature. At the same time, ferroelectric domains also exhibit significant temperature sensitivity. This dual behavior offers key insights for domain engineering of KNN-based materials aimed at enhancing electromechanical performance.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"115 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144693818","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Low damping (111) oriented lithium aluminum ferrite thin films for spin wave applications 用于自旋波应用的低阻尼（111）取向锂铝铁氧体薄膜

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-22 DOI: 10.1063/5.0278599

Lerato Takana, Sanyum Channa, Xin Yu Zheng, Daisy O'Mahoney, Sauviz Alaei, Yuntian Li, Arturas Vailionis, Padraic Shafer, Alpha T. N'Diaye, Christoph Klewe, Ian Fisher, Yuri Suzuki

引用次数: 0

Spin symmetry study in non-collinear CrSe: Odd-wave magnetism induced by glide mirror symmetry breaking 非共线CrSe中的自旋对称性研究：由滑动镜像对称破缺引起的奇波磁性

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-22 DOI: 10.1063/5.0274506

Shuo Xu, Meiyin Yang, Yanru Li, Bowen Shen, Shuaiyu Gong, Jingsong Huang, Peiyue Yu, Ying Li, Jun Luo

引用次数: 0

Solar-blind ultraviolet β -Ga2O3 phototransistor for logic and secure optical communication applications 用于逻辑和安全光通信应用的太阳盲紫外β -Ga2O3光电晶体管

IF 4 2区物理与天体物理

Applied Physics Letters Pub Date : 2025-07-22 DOI: 10.1063/5.0281687

Anqi Qiang, Bingjie Ye, Leyang Qian, Huazhen Sun, Xiumei Zhang, Yushen Liu, Irina N. Parkhomenko, Fadei F. Komarov, Xinyi Shan, Yu Liu, Guofeng Yang

引用次数: 0