{"title":"Plasma etching enabling the fast reconstruction of pre-catalysts into defective metal oxyhydroxides with high spin state and activated lattice oxygen for efficient oxygen evolution","authors":"Jing Xie, Jingyi Shi, Ying Xu, Shoujie Liu, Luchun Qiu, Li Yang, Ping Yan, Xin-Yao Yu","doi":"10.1063/5.0292829","DOIUrl":"https://doi.org/10.1063/5.0292829","url":null,"abstract":"Transition metal-based catalytic materials are promising pre-catalysts for oxygen evolution reaction (OER), during which the in situ reconstructed metal oxyhydroxides are real active sites. However, a majority of documented pre-catalysts exhibit sluggish reconstruction dynamics, leading to in-complete reconstruction and consequently poor OER activity. Herein, exemplified by Hoffman-type coordination polymer (NiFe-Ni PBA), plasma etching is employed to create cation-anion dual vacancies (Niv and CNv) to promote the rapid and deep reconstruction of NiFe-Ni PBA into defective NiOOH/FeOOH (P-NiOOH/FeOOH) during the activation process. Langmuir probe diagnostics and structural characterizations of NiFe-Ni PBA before and after plasma etching evidence that Niv and CNv are predominantly generated by the bombardment of high-energy ions, whereas elemental nickel will be produced when electron energy exceeds a critical threshold. Density functional theory (DFT) calculations, in situ Raman spectra, and Laviron analysis reveal that the abundant vacancies in plasma-etched NiFe-Ni PBA effectively lower the reconstruction reaction barrier and promote the accumulation of OH− ions during the reconstruction process, enabling faster reconstruction kinetics. As expected, the P-NiOOH/FeOOH exhibits enhanced OER activity with a low overpotential of 220 mV at 10 mA cm−2 and a small Tafel slope of 29.82 mV dec−1 in 1 M KOH. Magnetic test, differential electrochemical mass spectrometry measurement, and DFT calculations illustrate that the improved OER activity can be attributed to the high spin state, optimized d-band center of metal ions, rich oxygen vacancies, and more activated lattice oxygen in P-NiOOH/FeOOH. Moreover, the P-NiOOH/FeOOH also displays splendid catalytic stability up to 850 h.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"75 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145194991","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"In situ construction of CuInSe2–In2Se3 heterojunctions for highly selective self-powered NO2 sensors","authors":"Hao Jiang, Shilei Fan, Xiao Chang, Xianghong Liu, Wei Zheng, Jun Zhang","doi":"10.1063/5.0289490","DOIUrl":"https://doi.org/10.1063/5.0289490","url":null,"abstract":"Self-powered gas sensors are crucial for sustainable IoT systems but remain limited by detection thresholds, selectivity, and scalable fabrication methods. To overcome transfer-induced performance degradation in conventional fabrication of transition metal dichalcogenide (TMD) heterojunctions, herein we propose a direct in situ solid-phase conversion strategy to monolithic two-dimensional (2D) CuInSe2–In2Se3 thin-film heterojunctions. Under UV irradiation (365 nm), the heterojunction device exhibits self-powered operation with excellent selectivity and ultrafast response kinetics (2.36 s) toward 5 ppm NO2 at room temperature, with sensitivity comparable to that of leading-edge self-powered sensors. Significantly, our strategy eliminates the need for mechanical exfoliation and transfer steps, thereby ensuring robust device performance. This work offers perspectives on the rational design of planar heterojunctions for next-generation self-powered gas sensors, which are characterized by high performance, low cost, and energy efficiency.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"23 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145195010","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Hengyuan Qi, Teng Li, Jingjing Yu, Jialin Duan, Jiawei Cui, Sihang Liu, Junjie Yang, Yingming Song, Han Yang, Zhijian Yang, Xuelin Yang, Maojun Wang, Shiwei Feng, Bo Shen, Meng Zhang, Jin Wei
{"title":"Polarization-enhanced conductivity in enhancement-mode GaN p-FET","authors":"Hengyuan Qi, Teng Li, Jingjing Yu, Jialin Duan, Jiawei Cui, Sihang Liu, Junjie Yang, Yingming Song, Han Yang, Zhijian Yang, Xuelin Yang, Maojun Wang, Shiwei Feng, Bo Shen, Meng Zhang, Jin Wei","doi":"10.1063/5.0281588","DOIUrl":"https://doi.org/10.1063/5.0281588","url":null,"abstract":"The E-mode GaN p-FET exhibits low current density and high on-resistance, which hinders the development of GaN complementary logic circuits. This work exploits the polarization effect to enhance the p-type conductivity in the p-GaN layer: two AlN layers are inserted in the p-GaN layer, and the polarization field separates EA and EF of the p-GaN layer underneath each AlN, leading to enhanced acceptor ionization and a formation of two-dimensional hole gas (2DHG) above the AlN layer. Therefore, the extrinsic resistance of the GaN p-FET is reduced. In the gate region, the upper AlN layer can serve as an etch-stop layer to optimize the gate recess process, and the bottom AlN layer can induce a high-density hole channel above it during the on-state. The fabricated GaN p-FET exhibits an E-mode operation with a threshold voltage (Vth) of −2.8 V, a large on-state current density (ION) of 12.5 mA/mm, and a low effective on-resistance (Ron) of 401 Ω mm. The Vth–Imax performance is among the best in literature.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"24 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145195011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Li Wu, Yan Chen, Ao Qu, Nana Zhang, Daming Fan, Junwu Tao, Fei Cheng
{"title":"Development of a high-efficient and uniform microwave-induced atmospheric pressure linear plasma jet source based on a square coaxial structure","authors":"Li Wu, Yan Chen, Ao Qu, Nana Zhang, Daming Fan, Junwu Tao, Fei Cheng","doi":"10.1063/5.0288621","DOIUrl":"https://doi.org/10.1063/5.0288621","url":null,"abstract":"A microwave-induced atmospheric pressure linear plasma jet source at 2.45 GHz based on a square coaxial structure was proposed. The device was capable of generating a plasma jet by exciting argon gas with 50 W microwave incident power. By increasing the microwave power or gas flow rate, the width and height of the resulting linear plasma jet gradually expanded. Experimental results showed that a linear plasma jet with a width of 30 mm and a height of 8 mm was produced with 200 W microwave incident power and 40 l/min gas flow rate. Optical emission spectra measurements at different positions showed that the produced linear plasma has good homogeneity. The electron density of the generated linear plasma reached 1015 cm−3. The energy utilization of this plasma source was more than 90%. This portable plasma device offers great potential for linear plasma applications in areas such as food processing and environmental treatment.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"93 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145195030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Spin-wave-driven skyrmion manipulation via engineered potential well lines","authors":"Xiao-Ping Ma, Qi-Shuo Wang, Kangjie Tian, Xiao-Xue Yang, Hongyan Zhang, Zhaochu Luo, Hong-Guang Piao","doi":"10.1063/5.0284205","DOIUrl":"https://doi.org/10.1063/5.0284205","url":null,"abstract":"Magnetic skyrmions, as topologically protected spin textures, have emerged as promising candidates for information carriers in next-generation spintronic devices, owing to their nanoscale size, stability, and low driving-current requirements. However, their practical implementation faces significant challenges, including uncontrolled skyrmion motion, random generation, and weak readout signals, which hinder reliable device operation. The recently demonstrated capability to craft potential well lines by modulating local material parameters, such as magnetocrystalline anisotropy and exchange stiffness constant, provides solutions to these challenges. In this work, we proposed an approach to achieve precise skyrmion navigation along predefined trajectories using spin-wave excitation. The proposed method addresses the fundamental limitation in skyrmion propulsion driven by spin waves (SWs), where SW dissipation prevents sustained motion along the wave propagation direction over extended distances. Furthermore, our strategy enhances the readout signal amplitude, addressing a critical issue in skyrmion detection.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"75 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145195032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Actively tunable infrared emissivity regulator based on electrochemical lithium intercalation in three-dimensional graphene foam","authors":"Zixuan Wang, Yijie Li, Yanyan Song, Yubing Liu, Ganying Zeng","doi":"10.1063/5.0291958","DOIUrl":"https://doi.org/10.1063/5.0291958","url":null,"abstract":"Dynamic engineering of thermal infrared radiation offers significant potential for applications in thermal camouflage, radiative cooling, and solar energy harvesting. In this work, we demonstrate that three-dimensional (3D) graphene foam enables active thermal radiation control via electrochemical lithium intercalation. It exhibits a remarkable reduction in infrared absorptivity, from 0.50 at 25 µm and 0.64 at 2.5 µm to 0.20 across the wavelength range of 2.5–25 µm. At background temperatures of 30, 40, and 50 °C, the infrared apparent temperature decreases by ∼1.5, 2.5, and 4.5 °C, respectively, upon charging from 1 to 3.8 V. The infrared response time of the device at 50 °C is approximately 2.5 s and remains stable over 20 cycles. This optical change is achieved by introducing lithium-ion into graphene layers, causing a shift of Fermi energy (EF). Our findings indicate a significant decrease in broadband infrared absorptivity, which is suitable for infrared stealth applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"24 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145195058","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Rethinking redox electrolyte design: Why diffusion layer ion exchange matters more than surface area","authors":"Yuhu Wang, Zhenheng Sun, Tianyu Yang, Jiecai Fu","doi":"10.1063/5.0293346","DOIUrl":"https://doi.org/10.1063/5.0293346","url":null,"abstract":"Redox electrolyte-enhanced aqueous energy storage devices (RE-AESDs) offer a promising route to surpass the energy density of traditional supercapacitors, but their performance is often plagued by parasitic transport phenomena that lead to low efficiency. Conventional design paradigms that focus on maximizing electrode specific surface area (SSA)—a strategy inherited from supercapacitors—are physically insufficient if device operation is governed by diffusion kinetics. Here, we introduce and validate a quantitative physical diagnostic for the parasitic diffusive flux that undermines efficiency in these systems. By investigating the archetypal [Fe(CN)6]4−/[Fe(CN)6]3− system with carbon electrodes of vastly different SSAs (>1400-fold variation), we demonstrate that charge capacity is fundamentally decoupled from electrode geometry. Instead, performance is dictated by transport physics within the Nernst diffusion layer. Using multi-potential step measurements, we isolate a non-zero termination current (it) as a direct, quantitative measure of the parasitic flux, a key physical parameter previously discussed only qualitatively. This transport-centric model is further substantiated by power-law analysis of voltammetry data, which confirms diffusion-dominated kinetics (b ≈ 0.5). Finally, we link this quantified parasitic flux to long-term cycling degradation. These findings compel a paradigm shift in the RE-AESD design, from optimizing surface geometry to controlling the fundamental physics of ion transport and mitigating the parasitic fluxes quantified by our diagnostic method.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"100 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145194992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Switchable topological property of magneto-optical photonic crystal waveguide by adjusting magnetic field strength","authors":"Yuhao Huang, Yidong Zheng, Zhi-Yuan Li, Wenyao Liang","doi":"10.1063/5.0289520","DOIUrl":"https://doi.org/10.1063/5.0289520","url":null,"abstract":"We theoretically and experimentally demonstrate a special phenomenon in magneto-optical photonic crystals (MOPCs), wherein the gap Chern number of a high-frequency bandgap varies with the strength of an external magnetic field. Specifically, when the magnetic field strength exceeds a critical threshold, the gap Chern number of the third bandgap undergoes a transition from a non-zero value to zero, indicating a topological phase transition in the system. This finding provides an alternative approach to alter the topological properties of a photonic bandgap without modifying the geometric structure. Based on this effect, we construct a waveguide structure composed of a square MOPC with metallic boundaries. By simply adjusting the magnetic field strength, one can realize the dynamic switching between a dual-mode (odd and even states) topological waveguide and a trivial waveguide within a specific frequency range. Microwave experiments further verify the occurrence of such topological transitions. This study expands current strategies for controlling light transport in MOPCs and establishes a practical platform for developing topological photonic devices with multiple tunable degrees of freedom.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"1 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145195008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jochen Kaupp, Yorick Reum, Giora Peniakov, Monika Emmerling, Sabrina Estevam, Martin Kamp, Tobias Huber-Loyola, Sven Höfling, Andreas Theo Pfenning
{"title":"Post-fabrication tuning of circular Bragg grating resonators via atomic layer deposition","authors":"Jochen Kaupp, Yorick Reum, Giora Peniakov, Monika Emmerling, Sabrina Estevam, Martin Kamp, Tobias Huber-Loyola, Sven Höfling, Andreas Theo Pfenning","doi":"10.1063/5.0287371","DOIUrl":"https://doi.org/10.1063/5.0287371","url":null,"abstract":"Circular Bragg grating resonators have gained a lot of attention in various material platforms due to their high Purcell factors over large bandwidth. Although the bandwidth is on the order of several nanometers, the best performance is given when perfectly matching the resonator's frequency with the frequency of the embedded emitter. The device resonance spectrum depends on many parameters, such that fabrication often renders devices with detuning to the intended frequency. Here, we show a method to tune the resonator mode in post-fabrication via atomic layer deposition. Atomic layer deposition of a dielectric layer (Al2O3) is used to red-shift the optical resonance. While the presented technique is universal for circular Bragg grating resonators within a wide class of material systems, we choose the quaternary semiconductor In0.53Al0.23Ga0.24As and incorporate InAs quantum dots as active material to validate the technique. We show a tuning of the resonator mode of up to (11.3±0.1) nm with (36±1) nm of Al2O3 at about 1460 nm emission wavelength, which is more than half of the experimental linewidth of the mode itself.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"3 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145195012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Robust measurement of distorted partially coherent vortex beams","authors":"Junan Zhu, Zhiquan Hu, Zhuoyi Wang, Yiyi Hang, Hao Zhang, Xingyuan Lu, Qiwen Zhan, Yangjian Cai, Chengliang Zhao","doi":"10.1063/5.0287349","DOIUrl":"https://doi.org/10.1063/5.0287349","url":null,"abstract":"Vortex beams, characterized by their orbital angular momentum proportional to the topological charge, offer significant potential in optical communication. However, turbulence-induced beam distortion and wandering lead to mode crosstalk and hinder accurate topological charge measurement, resulting in the degradation of transmitted information. While coherence modulation has shown potential in enhancing beam stability under dynamic turbulence, robust measurement of the topological charge remains a significant challenge. To address this, we proposed a robust measurement method that integrates learning-based turbulence compensation with self-reference holography for topological charge measurement of partially coherent vortex beams. Both simulation and experimental results confirm that the proposed compensation neural network effectively corrects distorted beams, thereby enabling stable topological charge measurement over extended periods. Moreover, the proposed framework demonstrates strong generalization capabilities, accurately measuring topological charges for coherence widths beyond those in the training dataset. This work provides a promising solution for non-ideal free-space optical communication systems utilizing vortex beams.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"5 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145195033","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}