APL Materials最新文献_第4页

Anisotropic optical and magneto-optical properties of antiferromagnetic Weyl semimetal Mn3Sn epitaxial thin films 反铁磁性韦尔半金属 Mn3Sn 外延薄膜的各向异性光学和磁光特性

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-09-13 DOI: 10.1063/5.0225441

Dong Gao, Ting Yang, Fu Tang, Jiejun Su, Weihao Yang, Dengfu Deng, Yunfei Xie, Jun Qin, Xiao Liang, Lei Bi

{"title":"Anisotropic optical and magneto-optical properties of antiferromagnetic Weyl semimetal Mn3Sn epitaxial thin films","authors":"Dong Gao, Ting Yang, Fu Tang, Jiejun Su, Weihao Yang, Dengfu Deng, Yunfei Xie, Jun Qin, Xiao Liang, Lei Bi","doi":"10.1063/5.0225441","DOIUrl":"https://doi.org/10.1063/5.0225441","url":null,"abstract":"Antiferromagnetic Weyl semimetal Mn3Sn exhibiting strong magneto-optical Kerr effect (MOKE) due to non-zero Berry curvature is attractive for spintronic and photonic device applications. Despite many reports on the anisotropic anomalous Hall effect (AHE), so far, there have been few studies on its anisotropic optical properties. In this work, we experimentally characterized the anisotropic optical and magneto-optical (MO) properties of Mn3Sn(20)/MgO(110) and Mn3Sn(0001)/Al2O3(0001) epitaxial films using ellipsometry in the wavelength range from 300 to 1690 nm. By measuring the Mueller matrix of magnetized Mn3Sn, the anisotropic permittivity tensor is determined using the 4 × 4 transfer matrix method. Temperature dependent MOKE measurement confirmed the origin of the anisotropic MO effect to the non-zero Berry curvature of the chiral magnetic phase. The measured permittivity also agrees well with first-principles calculations. The anisotropic optical and MO properties determined in this work can be useful for Mn3Sn based spintronic device characterization and photonic device development.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"5 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142248829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Microgel-based etalon membranes: Characterization and properties 基于微凝胶的等离子膜：表征和特性

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-09-13 DOI: 10.1063/5.0227483

G. Kontaxi, G. Wensink, P. M. Sberna, M. Rücker, V. Garbin, M. J. Serpe, H. Bazyar

{"title":"Microgel-based etalon membranes: Characterization and properties","authors":"G. Kontaxi, G. Wensink, P. M. Sberna, M. Rücker, V. Garbin, M. J. Serpe, H. Bazyar","doi":"10.1063/5.0227483","DOIUrl":"https://doi.org/10.1063/5.0227483","url":null,"abstract":"We introduce Microgel-based Etalon Membranes (MEMs), based on the combination of stimuli-responsive microgels with an etalon, which is an optical device consisting of two reflecting plates and is used to filter specific wavelengths of light. The microgels are sandwiched between two reflective layers and, in response to a stimulus (e.g., temperature, pH, or biomarker concentration), swell or de-swell, thereby changing the distance between the two reflective layers and generating multiple peaks in the reflectance spectra. This property gives a MEM the unique capability of simultaneous separation and tunable responses to environmental changes and/or biomarker concentrations. We propose a design based on gold layers on a silicon nitride wafer membrane. Our comprehensive characterization, employing permeability experiments, in situ optical reflectance spectroscopy, in-liquid atomic force microscopy (AFM) analysis, and captive bubble contact angle measurements, elucidates the dynamic response of MEM to pH, temperature, and glucose stimuli and the corresponding effect of microgel swelling/de-swelling on the membrane properties, e.g., permeability. The AFM results confirm the dynamic changes of the microgel layer’s thickness on the membrane surface in response to the stimuli. Although the microgel’s swelling/de-swelling influences the effective pore radius, the decrease in the membrane’s permeance is limited to less than 10%. In the swollen state of the microgels, the etalon membranes show a prominent hydrophilic behavior, while they become less hydrophilic in the microgels’ de-swollen state. This work introduces MEM and provides novel insights into their behavior. The fundamental understanding that we reveal opens the way to applications ranging from point-of-care testing to continuous environmental monitoring.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"1 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142248828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ni3S2 particle–embedded nanotubes as a high-performance electrocatalyst for overall water splitting 作为整体水分离高性能电催化剂的嵌入式纳米管 Ni3S2 粒子

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-09-11 DOI: 10.1063/5.0225168

Pengcheng Zhu, Li Ye, Xiaolei Li, Tianxing Wang, Yao Zhong, Lin Zhuang

{"title":"Ni3S2 particle–embedded nanotubes as a high-performance electrocatalyst for overall water splitting","authors":"Pengcheng Zhu, Li Ye, Xiaolei Li, Tianxing Wang, Yao Zhong, Lin Zhuang","doi":"10.1063/5.0225168","DOIUrl":"https://doi.org/10.1063/5.0225168","url":null,"abstract":"Hydrogen evolution reactions (HERs) and oxygen evolution reactions (OERs) are crucial for renewable energy production. Developing stable, cost-effective, and highly catalytic HER and OER electrocatalysts is paramount. In this study, a combination of hydrothermal synthesis and annealing was used to fabricate nickel sulfide (Ni3S2) particle–embedded nanotubes supported on nickel (Ni) foam (Ni3S2 PN/NF). The Ni3S2 PN/NF structures featured a highly branched morphology with a large specific surface area, surpassing that of conventional Ni metal nanotubes. This design increased the number of reactive sites and enhanced the charge-transfer process. The Ni foam substrate expanded the contact area of Ni3S2, thereby improving conductivity and facilitating the adsorption/desorption of intermediates on the Ni3S2 surface. Density functional theory calculations showed that the electronic structure of Ni3S2 provides excellent conductivity. Moreover, the multi-branched structure and inherent conductivity of the NiS nanomaterials enhanced the Ni3S2 PN/NF performance in 1M KOH, with overpotentials of 87 and 210 mV with iR compensation at 10 mA cm−2 for the HER and OER, respectively. The synthesized Ni3S2 PN/NF also exhibited robust durability for 20 h. These results demonstrate that Ni3S2 PN/NF is an excellent catalyst for both HER and OER.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"27 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142197806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Comprehensive characterization of nitrogen-related defect states in β-Ga2O3 using quantitative optical and thermal defect spectroscopy methods 利用定量光学和热缺陷光谱法全面表征 β-Ga2O3 中的氮相关缺陷态

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-09-11 DOI: 10.1063/5.0225570

Hemant Ghadi, Evan Cornuellue, Joe F. Mcglone, Alexander Senckowski, Shivam Sharma, Man Hoi Wong, Uttam Singisetti, Steven A. Ringel

{"title":"Comprehensive characterization of nitrogen-related defect states in β-Ga2O3 using quantitative optical and thermal defect spectroscopy methods","authors":"Hemant Ghadi, Evan Cornuellue, Joe F. Mcglone, Alexander Senckowski, Shivam Sharma, Man Hoi Wong, Uttam Singisetti, Steven A. Ringel","doi":"10.1063/5.0225570","DOIUrl":"https://doi.org/10.1063/5.0225570","url":null,"abstract":"This study provides a comprehensive analysis of the dominant deep acceptor level in nitrogen-doped beta-phase gallium oxide (β-Ga2O3), elucidating and reconciling the hole emission features observed in deep-level optical spectroscopy (DLOS). The unique behavior of this defect, coupled with its small optical cross section, complicates trap concentration analysis using DLOS, which is essential for defect characterization in β-Ga2O3. A complex feature arises in DLOS results due to simultaneous electron emission to the conduction band and hole emission to the valence band from the same defect state, indicating the formation of two distinct atomic configurations and suggesting metastable defect characteristics. This study discusses the implications of this behavior on DLOS analysis and employs advanced spectroscopy techniques such as double-beam DLOS and optical isothermal measurements to address these complications. The double-beam DLOS method reveals a distinct hole emission process at EV+1.3 eV previously obscured in conventional DLOS. Optical isothermal measurements further characterize this energy level, appearing only in N-doped β-Ga2O3. This enables an estimate of the β-Ga2O3 hole effective mass by analyzing temperature-dependent carrier emission rates. This work highlights the impact of partial trap-filling behavior on DLOS analysis and identifies the presence of hole trapping and emission in β-Ga2O3. Although N-doping is ideal for creating semi-insulating material through the efficient compensation of free electrons, this study also reveals a significant hole emission and migration process within the weak electric fields of the Schottky diode depletion region.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"210 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142197796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Adsorption-controlled growth of homoepitaxial c-plane sapphire films 同向外延 C 面蓝宝石薄膜的吸附控制生长

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-09-11 DOI: 10.1063/5.0224092

Lena N. Majer, Tolga Acartürk, Peter A. van Aken, Wolfgang Braun, Luca Camuti, Johan Eckl-Haese, Jochen Mannhart, Takeyoshi Onuma, Ksenia S. Rabinovich, Darrell G. Schlom, Sander Smink, Ulrich Starke, Jacob Steele, Patrick Vogt, Hongguang Wang, Felix V. E. Hensling

引用次数: 0

Improvement of voltage-controlled magnetic anisotropy effect by inserting an ultrathin metal capping layer 通过插入超薄金属盖层改善电压控制的磁各向异性效应

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-09-11 DOI: 10.1063/5.0222313

Takayuki Nozaki, Tomohiro Ichinose, Tatsuya Yamamoto, Kay Yakushiji, Shinji Yuasa

引用次数: 0

α-Ta films on c-plane sapphire with enhanced microstructure 具有增强微观结构的 c 平面蓝宝石上的α-Ta 薄膜

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-09-06 DOI: 10.1063/5.0218021

Lena N. Majer, Sander Smink, Wolfgang Braun, Bernhard Fenk, Varun Harbola, Benjamin Stuhlhofer, Hongguang Wang, Peter A. van Aken, Jochen Mannhart, Felix V. E. Hensling

引用次数: 0

Growth of bilayer transition metal dichalcogenides at controlled locations 在受控位置生长双层过渡金属二钙化物

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-09-05 DOI: 10.1063/5.0221397

Chengyu Wen, Carl H. Naylor, Kevin P. O’Brien, Adedapo Oni, Mahmut S. Kavrik, Yeonjoon Suh, A. T. Charlie Johnson

引用次数: 0

Composition and strain of the pseudomorphic α-phase intermediate layer at the Ga2O3/Al2O3 interface Ga2O3/Al2O3 界面伪α相中间层的成分和应变

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-09-05 DOI: 10.1063/5.0226857

M. Schowalter, A. Karg, M. Alonso-Orts, J. A. Bich, S. Raghuvansy, M. S. Williams, F. F. Krause, T. Grieb, C. Mahr, T. Mehrtens, P. Vogt, A. Rosenauer, M. Eickhoff

{"title":"Composition and strain of the pseudomorphic α-phase intermediate layer at the Ga2O3/Al2O3 interface","authors":"M. Schowalter, A. Karg, M. Alonso-Orts, J. A. Bich, S. Raghuvansy, M. S. Williams, F. F. Krause, T. Grieb, C. Mahr, T. Mehrtens, P. Vogt, A. Rosenauer, M. Eickhoff","doi":"10.1063/5.0226857","DOIUrl":"https://doi.org/10.1063/5.0226857","url":null,"abstract":"We investigate the composition of α-phase intermediate layers at epitaxial Ga2O3/Al2O3 interfaces using high angle annular dark field scanning transmission electron microscopy. Their presence is considered a general phenomenon as they are observed independent of the growth technique [Schewski et al., Appl. Phys. Exp. 8, 011101]. Samples were grown by plasma assisted molecular beam epitaxy using different growth conditions. Almost independent of these, the quantitative evaluation of the measured intensities gave Ga concentrations of ∼25%. We show that the previously published model, based on a pure α-Ga2O3 interlayer, fails if it is adapted to the measured composition. Density functional theory (DFT) computations were used to overcome the approximations made in this model and suggest that a stabilization of the layer is possible due to the low Ga concentration (≤35%) at which the α-phase is the most stable. Our surface model computations suggest an exchange of Ga atoms at the surface with Al atoms from the underlying substrate as a possible formation mechanism.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"3 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142197802","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Intra-family transformation of the Bi–Te family via in situ chemical interactions 通过原位化学作用实现双碲族的族内转化

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-09-05 DOI: 10.1063/5.0223779

Zhihao He, Tin Seng Manfred Ho, Chen Ma, Jiannong Wang, Rolf Lortz, Iam Keong Sou

{"title":"Intra-family transformation of the Bi–Te family via in situ chemical interactions","authors":"Zhihao He, Tin Seng Manfred Ho, Chen Ma, Jiannong Wang, Rolf Lortz, Iam Keong Sou","doi":"10.1063/5.0223779","DOIUrl":"https://doi.org/10.1063/5.0223779","url":null,"abstract":"The Bi–Te binary system, characterized by the homologous series of (Bi2)m(Bi2Te3)n, has always attracted research interest for its layered structures and potential in advanced material applications. Despite the fact that Bi2Te3 has been extensively studied, the exploration of other compounds has been constrained by synthesis challenges. This study reports the molecular beam epitaxy growth of FeTe on Bi2Te3, demonstrating that varying growth conditions can turn the Bi2Te3 layer into different Bi–Te phases and form corresponding FeTe/Bi–Te heterostructures. Our combined analysis using reflection high-energy electron diffraction, high-resolution x-ray diffraction, and high-resolution scanning transmission electron microscopy indicates that specific growth conditions used for the growth of the FeTe layer can facilitate the extraction of Te from Bi2Te3, leading to the formation of Bi4Te3 and Bi6Te3. In addition, by lowering the FeTe growth temperature to 230 °C, Te extraction from the Bi2Te3 layer could be avoided, preserving the Bi2Te3 structure. Notably, all three FeTe/Bi–Te structures exhibit superconductivity, with the FeTe/Bi2Te3 heterostructure enjoying the highest superconductivity quality. The results of magneto-transport measurements indicate that the induced superconductivity displays a three-dimensional nature. These findings introduce a novel method for realizing Bi4Te3 and Bi6Te3 through Te extraction by growing FeTe on Bi2Te3, driven by the high reactivity between Fe and Te. This approach holds promise for synthesizing other members of the Bi–Te series, expanding the functional potential of these materials.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"13 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142197800","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0