APL Materials最新文献_第4页

Enhanced electrical performance in graphene field-effect transistors through post-annealing of high-k HfLaO gate dielectrics 通过对高 K HfLaO 栅极电介质进行后退火处理提高石墨烯场效应晶体管的电气性能

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-08-14 DOI: 10.1063/5.0207559

Chunlin Liu, Xuesong Li, Ling-Xuan Qian, Jing Tian, Xiping Zhang

{"title":"Enhanced electrical performance in graphene field-effect transistors through post-annealing of high-k HfLaO gate dielectrics","authors":"Chunlin Liu, Xuesong Li, Ling-Xuan Qian, Jing Tian, Xiping Zhang","doi":"10.1063/5.0207559","DOIUrl":"https://doi.org/10.1063/5.0207559","url":null,"abstract":"High-k gate dielectrics have attracted a great deal of attention in the investigation of transistors due to their unique properties such as superior gate controllability. However, their integration into graphene field-effect transistors (GFETs) remains problematic and the physical mechanisms governing the performance of these devices are still not fully understood. In this study, the effects of post-annealing on GFETs utilizing the high-k HfLaO ternary oxide as the gate dielectric were comprehensively investigated. The HfLaO film was deposited on top of graphene by magnetron sputtering, and the device performance with various post-annealing temperatures was conducted. It was found that post-annealing temperature can effectively increase the dielectric constant through balancing the oxygen-vacancy defects and moisture absorption. Both the surface morphology of HfLaO and performance of GFETs were investigated, and the fabricated GFETs exhibit notable electrical performance enhancements. Specifically, GFETs with a 200 °C post-annealed HfLaO gate dielectric demonstrate the optimal device performance, featuring a minimal Dirac point voltage (VDirac) of 1.1 V and a minimal hysteresis (ΔVDirac) of 0.5 V. The extracted hole and electron mobilities are 4012 and 1366 cm2/V · s, respectively, nearly one order of magnitude higher than that of GFETs with as-deposited HfLaO. This work outperforms other existing GFETs utilizing high-k gate dielectric and chemical vapor deposition grown graphene in terms of both carrier mobility and on–off ratio. It is also noted that the excessive post-annealing temperature can negatively impact the GFET performance through introducing oxygen vacancies, increasing the surface roughness, lowering the breakdown voltage, and inducing recrystallization.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"171 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142197834","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Polymer assisted deposition of YIG thin films with thickness control for spintronics applications 聚合物辅助沉积用于自旋电子学应用的具有厚度控制功能的 YIG 薄膜

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-08-14 DOI: 10.1063/5.0223260

Rubén Corcuera, Pilar Jiménez-Cavero, Rafael Pérez del Real, Francisco Rivadulla, Rafael Ramos, José Ignacio Morales-Aragonés, Soraya Sangiao, César Magén, Luis Morellón, Irene Lucas

{"title":"Polymer assisted deposition of YIG thin films with thickness control for spintronics applications","authors":"Rubén Corcuera, Pilar Jiménez-Cavero, Rafael Pérez del Real, Francisco Rivadulla, Rafael Ramos, José Ignacio Morales-Aragonés, Soraya Sangiao, César Magén, Luis Morellón, Irene Lucas","doi":"10.1063/5.0223260","DOIUrl":"https://doi.org/10.1063/5.0223260","url":null,"abstract":"The use of magnetic garnets in new technologies such as spintronic devices requires fine-structured thin films. Classical fabrication techniques for these materials, typically physical vapor deposition methods, lead to excellent magnetic behavior. However, availability and scalability for potential applications are well restricted. In this study, we propose an innovative approach to fabricating Yttrium Iron Garnet thin films with precise thickness control achieved through iterative layer deposition via a chemical synthesis route. Remarkably, the iterative deposition process results in films exhibiting exceptional crystallinity. Magnetic characterization provides saturation magnetization and coercivity values on par with those reported in literature, summed to narrow ferromagnetic resonance lines. Therefore, in this work we demonstrate the viability of polymer assisted deposition as a promising alternative thinking about scalability to conventional deposition techniques for this material. Notably, our findings reveal energy conversion efficiencies comparable to those achieved with materials synthesized via physical vapor deposition methods.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"210 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142197835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Thermal contribution to current-driven antiferromagnetic-order switching 热对电流驱动反铁磁阶切换的贡献

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-08-14 DOI: 10.1063/5.0219729

Myoung-Woo Yoo, Virginia O. Lorenz, Axel Hoffmann, David G. Cahill

{"title":"Thermal contribution to current-driven antiferromagnetic-order switching","authors":"Myoung-Woo Yoo, Virginia O. Lorenz, Axel Hoffmann, David G. Cahill","doi":"10.1063/5.0219729","DOIUrl":"https://doi.org/10.1063/5.0219729","url":null,"abstract":"In information technology devices, current-driven state switching is crucial in various disciplines including spintronics, where the contribution of heating to the switching mechanism plays an inevitable role. Recently, current-driven antiferromagnetic order switching has attracted considerable attention due to its implications for next-generation spintronic devices. Although the switching mechanisms can be explained by spin dynamics induced by spin torques, some reports have claimed that demagnetization above the Néel temperature due to Joule heating is critical for switching. Here, we present a systematic method and an analytical model to quantify the thermal contribution due to Joule heating in micro-electronic devices, focusing on current-driven octupole switching in the non-collinear antiferromagnet, Mn3Sn. The results consistently show that the critical temperature for switching remains relatively constant above the Néel temperature, while the threshold current density depends on the choice of substrate and the base temperature. In addition, we provide an analytical model to calculate the Joule-heating temperature, which quantitatively explains our experimental results. From numerical calculations, we illustrate the reconfiguration of magnetic order during cooling from a demagnetized state of polycrystalline Mn3Sn. This work provides not only deeper insights into magnetization switching in antiferromagnets, but also a general guideline for evaluating the Joule-heating temperature excursions in micro-electronic devices.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"97 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142197829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Thermal conductivity of double polymorph Ga2O3 structures 双多晶体 Ga2O3 结构的导热性

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-08-14 DOI: 10.1063/5.0213985

Azat Abdullaev, Kairolla Sekerbayev, Alexander Azarov, Vishnukanthan Venkatachalapathy, Vinay S. Chauhan, Zhandos Utegulov, Andrej Kuznetsov

{"title":"Thermal conductivity of double polymorph Ga2O3 structures","authors":"Azat Abdullaev, Kairolla Sekerbayev, Alexander Azarov, Vishnukanthan Venkatachalapathy, Vinay S. Chauhan, Zhandos Utegulov, Andrej Kuznetsov","doi":"10.1063/5.0213985","DOIUrl":"https://doi.org/10.1063/5.0213985","url":null,"abstract":"Recently discovered double gamma/beta (γ/β) polymorph Ga2O3 structures constitute a class of novel materials providing an option to modulate functional properties across interfaces without changing the chemical compositions of materials, in contrast to that in conventional heterostructures. In this work, for the first time, we investigate thermal transport in such homo-interface structures as an example of their physical properties. In particular, the cross-plane thermal conductivity (k) was measured by femtosecond laser-based time-domain thermoreflectance with MHz modulation rates, effectively obtaining depth profiles of the thermal conductivity across the γ-/β-Ga2O3 structures. In this way, the thermal conductivity of γ-Ga2O3 ranging from 1.84 to 2.11 W m−1 K−1 was found to be independent of the initial β-substrates orientations, in accordance with the cubic spinel structure of the γ-phase and consistently with the molecular dynamics simulation data. In turn, the thermal conductivity of monoclinic β-Ga2O3 showed a distinct anisotropy, with values ranging from 10 W m−1 K−1 for [−201] to 20 Wm−1 K−1 for [010] orientations. Thus, for double γ-/β-Ga2O3 polymorph structures formed on [010] β-substrates, there is an order of magnitude difference in thermal conductivity across the γ/β interface, which can potentially be exploited in thermal energy conversion applications.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"17 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142197830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Spin magnetotransport in rare-earth iron garnet (REIG)/Pt: Effects of modulated bulk and REIG/Pt interfaces 稀土铁榴石（REIG）/铂中的自旋磁传输：调制体和 REIG/Pt 界面的影响

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-08-14 DOI: 10.1063/5.0215071

Pei Gen Li, Sheung Mei Ng, Xin Yuan, Fu Xiang Zhang, Hon Fai Wong, Zhi Qin Chu, Peng Cao, Chi Wah Leung

{"title":"Spin magnetotransport in rare-earth iron garnet (REIG)/Pt: Effects of modulated bulk and REIG/Pt interfaces","authors":"Pei Gen Li, Sheung Mei Ng, Xin Yuan, Fu Xiang Zhang, Hon Fai Wong, Zhi Qin Chu, Peng Cao, Chi Wah Leung","doi":"10.1063/5.0215071","DOIUrl":"https://doi.org/10.1063/5.0215071","url":null,"abstract":"The intrinsic magnetization compensation behaviors of rare-earth iron garnets (REIGs) make the material promising for applications in ultrafast spin storage devices. REIG/heavy metal heterostructures such as TbIG/Pt often display two sign crossovers of anomalous Hall effect resistance with varying temperatures. One of these crossovers is attributed to the magnetization compensation of REIG, and the other to the competition between the magnetic proximity effect and the spin Hall effect. Here, we design trilayer REIG heterostructures based on two rare-earth species (Tb and Eu). We modulate the layer stacking of the TbIG/EuIG/TbIG sandwich with a fixed total thickness and explore the contributions of REIG bulk and REIG/Pt interfaces on these two crossover points. As TbIG gradually moves away from Pt, the compensation temperature shows some fluctuations. However, when TbIG is entirely out of contact with Pt, the second crossover point undergoes a change that shows REIG/Pt interface dependency. The results highlight the dominance of REIG bulk on the compensation behavior and the interface sensitivity of the second crossover point. This study provides a reference for designing controllable spintronics devices, such as magnon valve applications.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"27 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142197832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A photo rechargeable capacitor based on the p–n heterojunction of ZnO/ZIF-67 showing enhanced photovoltage 一种基于氧化锌/ZIF-67 p-n 异质结的光充电电容器，显示出更强的光电压

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-08-14 DOI: 10.1063/5.0219883

Yanlong Lv, Xin Sun, Changhua Mi, Jianan Gu, Yanhong Wang, Meicheng Li

引用次数: 0

Ellingham diagrams of binary oxides 二元氧化物的埃林厄姆图

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-08-14 DOI: 10.1063/5.0216426

Shun-Li Shang, Shuang Lin, Michael C. Gao, Darrell G. Schlom, Zi-Kui Liu

{"title":"Ellingham diagrams of binary oxides","authors":"Shun-Li Shang, Shuang Lin, Michael C. Gao, Darrell G. Schlom, Zi-Kui Liu","doi":"10.1063/5.0216426","DOIUrl":"https://doi.org/10.1063/5.0216426","url":null,"abstract":"Controlling the oxidation state of constituents by tuning the oxidizing environment and materials chemistry is vital to the successful synthesis of targeted binary or multicomponent oxides. We have conducted a comprehensive thermodynamic analysis of 137 binary oxides to calculate their Ellingham diagrams. It is found that the “reactive” elements that oxidize easily are the f-block elements (lanthanides and actinides), elements in groups II, III, and IV (alkaline earth, Sc, Y, Ti, Zr, and Hf), and Al and Li. In contrast, the “noble” elements are easily reduced. These are coinage metals (Cu, Ag, and especially Au), Pt-group elements, and Hg and Se. Machine learning-based sequential feature selection indicates that the ease of oxidation can be represented by the electronic structures of pure elements, for example, their d- and s-valence electrons, Mendeleev numbers, and groups, making the Periodic Table a useful tool for qualitatively assessing the ease of oxidation. The other elemental features that weakly correlate with the ease of oxidation are thermochemical properties such as melting points and the standard entropy at 298 K of pure elements. Applying Ellingham diagrams enables the oxidation of multicomponent materials to be predicted, such as the Fe–20Cr–20Ni alloy (in wt. %) and the equimolar high entropy alloy of AlCoCrFeNi. These Ellingham diagram-based predictions are in accordance with thermodynamic calculations using the CALPHAD approach and experimental observations in the literature.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"43 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142197827","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A low-cost and convenient route of fabricating GaN films with P-type mixed microcrystalline and amorphous structure deposited via Ga target of magnetron sputtering 通过磁控溅射镓靶沉积具有 P 型微晶和非晶混合结构的氮化镓薄膜的低成本便捷制备路线

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-08-14 DOI: 10.1063/5.0217625

Xueqing Chen, Nan Li, Zerong Xing, Jiasheng Zu, Xianwei Meng, Zhuquan Zhou, Qian Li, Lifeng Tian, Yuntao Cui, Jing Liu

{"title":"A low-cost and convenient route of fabricating GaN films with P-type mixed microcrystalline and amorphous structure deposited via Ga target of magnetron sputtering","authors":"Xueqing Chen, Nan Li, Zerong Xing, Jiasheng Zu, Xianwei Meng, Zhuquan Zhou, Qian Li, Lifeng Tian, Yuntao Cui, Jing Liu","doi":"10.1063/5.0217625","DOIUrl":"https://doi.org/10.1063/5.0217625","url":null,"abstract":"GaN, a third-generation semiconductor, has gained widespread attention owing to its high temperature resistance, wide bandgap, and high critical breakdown electric fields. Magnetron sputtering has a broad potential in the field of low-cost growth of GaN on account of high efficiency, superior quality, and convenient operation. However, challenges caused from the pure Ga targets with a huge refrigeration system need to be resolved for wide practices. Here, a new and cost-effective Ga target for magnetron sputtering was fabricated by utilizing the wetting properties of CuGa2 and Ga. Mixed microcrystalline and amorphous GaN films were obtained via reactive magnetron sputtering employing the Ga target. The average deposition rate is about 1.68 nm/min, and the average roughness is ∼7.45 ± 0.26 nm under 100 W of sputtering power. In addition, the sputtered GaN films were found to be wide-bandgap and p-type semiconductors with high transmittance, as revealed by x-ray photoelectron spectroscopy and absorption spectra. The GaN films display a bandgap of ∼3.60 eV and a transmittance exceeding 88.5% in the visible range. Furthermore, field-effect transistors and metal–semiconductor–metal photodetectors have been fabricated using the obtained GaN films, demonstrating favorable response characteristics. The prospects of microcrystalline/amorphous GaN films in sensing, power devices, and flexible electronics were forecasted. Overall, a low-cost and pervasive route of target fabrication process expands the possibilities of using low melting point metals in magnetron sputtering.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"43 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142197833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

MXene-reinforced bioactive polymer hydrogels for biomedical applications 用于生物医学应用的 MXene 增强型生物活性聚合物水凝胶

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-08-09 DOI: 10.1063/5.0226665

Guanghui Gu, Xue Chen, Gang Wei, Mingjin Xu

{"title":"MXene-reinforced bioactive polymer hydrogels for biomedical applications","authors":"Guanghui Gu, Xue Chen, Gang Wei, Mingjin Xu","doi":"10.1063/5.0226665","DOIUrl":"https://doi.org/10.1063/5.0226665","url":null,"abstract":"MXenes, a novel class of two-dimensional (2D) materials, have attracted considerable attention in various fields, especially in drug delivery, wound healing, bone tissue engineering, biosensing, and cancer treatment. Thanks to their remarkable physicochemical properties, MXenes hold great promise for biomedical applications. Concurrently, hydrogels composed of polymers have been extensively utilized in biomedical contexts. The unique properties of MXenes facilitate their integration into various bioactive hydrogels with enhanced functions and properties, thereby endowing the composites with multifunctional capabilities. MXene-reinforced polymer hydrogels (MRPHs) synergistically combine the advantageous characteristics of both MXenes and hydrogels, making them highly adaptable for integration with other theranostic strategies in medical applications. In this comprehensive review, we demonstrate recent advances in the design and synthesis of MRPHs for biomedical applications. Specifically, we introduce the unique functions and properties of MRPHs and analyze the methods for tailoring the functions of MRPHs by incorporating them with other active components, including functional molecules, 2D materials, metal ions, natural polymers, and drugs/genes. We then discuss the biomedical applications of the designed bioactive MRPHs in wound healing, tissue engineering, biosensors, and cancer therapy. We hope that this work provides valuable guidance and inspiration for readers to develop novel MRPHs for advanced applications.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"41 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141934529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Close-space sublimation of single-crystal metal films 单晶金属薄膜的近空间升华

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-08-09 DOI: 10.1063/5.0216953

Oliver J. Burton, Stephan Hofmann

引用次数: 0