APL Materials最新文献_第10页

Nature-inspired wood-like TPU/CB aerogels for high performance flexible strain sensors 灵感源自大自然的仿木热塑性聚氨酯/CB 气凝胶用于高性能柔性应变传感器

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-05-07 DOI: 10.1063/5.0205597

Guanyu Wang, Yadong Yang, Wenzhe Cao, Caichao Wan

{"title":"Nature-inspired wood-like TPU/CB aerogels for high performance flexible strain sensors","authors":"Guanyu Wang, Yadong Yang, Wenzhe Cao, Caichao Wan","doi":"10.1063/5.0205597","DOIUrl":"https://doi.org/10.1063/5.0205597","url":null,"abstract":"Strain sensors based on porous conductive polymers (CPCs) have garnered growing research interest for their potential applications in motion detection, healthcare, human–computer interaction, and artificial intelligence. However, the complexity of CPC processing makes it difficult to achieve the controlled design of microscopic porous structures, leading to simple and random porous structures, thus limiting their further use in the field of pressure sensing. This paper presents a strain sensor with a high-performance, wood-like structure composed of flexible conductive carbon black/plastic polyurethane foam (BWCT) using a bidirectional freeze casting process. The results show that, compared with conventional random freezing and unidirectional freezing, the bidirectional freeze casting process can effectively realize multiscale control of the composite structure, which results in a good laminar porous structure of the prepared BWCT. This parallel laminar structure not only contributes to the layered transfer of stresses but also avoids the local concentration of stresses. At the same time, it significantly increases the directional electrical conduction ability, which results in high sensing stability performance. In particular, the BWCT sensors had a wide detection range (80%), a lower limit of detection (0.2%), rapid response and relaxation times (200 ms), as well as exceptional durability (&gt;2000 cycles). Furthermore, the BWCT was integrated into a wearable sensor to monitor various human motions, including arm bending, squatting, and walking, demonstrating reliable detection performance. Altogether, the BWCT sensors are promising in expanding the application but also offer guidance for designing high-performance wearable strain sensors.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"9 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140930590","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Quantifying the large contribution from orbital Rashba–Edelstein effect to the effective damping-like torque on magnetization 量化轨道拉什巴-爱德斯坦效应对磁化有效阻尼扭矩的巨大贡献

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-05-07 DOI: 10.1063/5.0198970

S. Krishnia, B. Bony, E. Rongione, L. Moreno Vicente-Arche, T. Denneulin, A. Pezo, Y. Lu, R. E. Dunin-Borkowski, S. Collin, A. Fert, J.-M. George, N. Reyren, V. Cros, H. Jaffrès

{"title":"Quantifying the large contribution from orbital Rashba–Edelstein effect to the effective damping-like torque on magnetization","authors":"S. Krishnia, B. Bony, E. Rongione, L. Moreno Vicente-Arche, T. Denneulin, A. Pezo, Y. Lu, R. E. Dunin-Borkowski, S. Collin, A. Fert, J.-M. George, N. Reyren, V. Cros, H. Jaffrès","doi":"10.1063/5.0198970","DOIUrl":"https://doi.org/10.1063/5.0198970","url":null,"abstract":"The generation of large spin currents, and the associated spin torques, which are at the heart of modern spintronics, has long been achieved by charge-to-spin conversion mechanisms, i.e., the spin Hall effect and/or the Rashba–Edelstein effect, intrinsically linked to strong spin–orbit coupling. Recently, a novel path has been predicted and observed for achieving significant current-induced torques originating from light elements, hence possessing weak spin–orbit interaction. These findings point out to the potential involvement of the orbital counterpart of electrons, namely the orbital Hall and orbital Rashba–Edelstein effects. In this study, we aim at quantifying these orbital-related contributions to the effective torques acting on a thin Co layer in different systems. First, we demonstrate in Pt|Co|Cu|AlOx stacking a comparable torque strength coming from the conversion due to the orbital Rashba–Edelstein effect at the Cu|AlOx interface and the one from the effective spin Hall effect in the bottom Pt|Co system. Second, in order to amplify the orbital-to-spin conversion, we investigate the impact of an intermediate Pt layer in Co|Pt|Cu|CuOx. From the Pt thickness dependence of the effective torques determined by harmonic Hall measurements complemented by spin Hall magneto-resistance and THz spectroscopy experiments, we demonstrate that a large orbital Rashba–Edelstein effect is present at the Cu|CuOx interface, leading to a twofold enhancement of the net torques on Co for the optimal Pt thickness. Our findings not only demonstrate the crucial role that orbital currents can play in low-dimensional systems with weak spin–orbit coupling but also reveal that they enable more energy efficient manipulation of magnetization in spintronic devices.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"16 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140930667","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

In-plane gate induced transition asymmetry of spin-resolved Landau levels in InAs-based quantum wells InAs 基量子阱中自旋分辨朗道水平的面内栅极诱导转变不对称现象

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-05-07 DOI: 10.1063/5.0203097

Olivio Chiatti, Johannes Boy, Christian Heyn, Wolfgang Hansen, Saskia F. Fischer

{"title":"In-plane gate induced transition asymmetry of spin-resolved Landau levels in InAs-based quantum wells","authors":"Olivio Chiatti, Johannes Boy, Christian Heyn, Wolfgang Hansen, Saskia F. Fischer","doi":"10.1063/5.0203097","DOIUrl":"https://doi.org/10.1063/5.0203097","url":null,"abstract":"The crossover from quasi-two- to quasi-one-dimensional electron transport subject to transverse electric fields and perpendicular magnetic fields is studied in the diffusive to quasi-ballistic and zero-field to quantum Hall regime. In-plane gates and Hall-bars have been fabricated from an InGaAs/InAlAs/InAs quantum well hosting a 2DEG with a carrier density of about 6.8 × 1011 cm−2, a mobility of 1.8 × 105 cm2/Vs, and an effective mass of 0.042me after illumination. Magnetotransport measurements at temperatures down to 50 mK and fields up to 12 T yield a high effective Landé factor of g*=16, enabling the resolution of spin-split subbands at magnetic fields of 2.5 T. In the quantum Hall regime, electrostatic control of an effective constriction width enables steering of the reflection and transmission of edge channels, allowing a separation of fully spin-polarized edge channels at filling factors ν = 1 und ν = 2. A change in the orientation of a transverse in-plane electric field in the constriction shifts the transition between Zeeman-split quantum Hall plateaus by ΔB ≈ 0.1 T and is consistent with an effective magnetic field of Beff ≈ 0.13 T by spin-dependent backscattering, indicating a change in the spin-split density of states.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"42 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140930444","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Two-dimensional electron gases in AlYN/GaN heterostructures grown by metal–organic chemical vapor deposition 金属有机化学气相沉积法生长的 AlYN/GaN 异质结构中的二维电子气体

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-05-07 DOI: 10.1063/5.0203156

Isabel Streicher, Patrik Straňák, Lutz Kirste, Mario Prescher, Stefan Müller, Stefano Leone

{"title":"Two-dimensional electron gases in AlYN/GaN heterostructures grown by metal–organic chemical vapor deposition","authors":"Isabel Streicher, Patrik Straňák, Lutz Kirste, Mario Prescher, Stefan Müller, Stefano Leone","doi":"10.1063/5.0203156","DOIUrl":"https://doi.org/10.1063/5.0203156","url":null,"abstract":"Wurtzite AlN alloyed with group 3 elements Sc and Y boosts the performance of GaN-based high-electron-mobility transistors (HEMTs) significantly as they increase the spontaneous polarization of the barrier layer and, thus, enhance the charge carrier density ns in the two-dimensional electron gas (2DEG) formed at the interface with the GaN channel. The emerging nitride Al1−xYxN additionally features an a lattice parameter matching to that of GaN at x = 0.07–0.11, allowing for the growth of strain-free barriers. Here, we demonstrate the growth of Al1−xYxN/GaN heterostructures for HEMTs by metal–organic chemical vapor deposition for the first time. The effect of the Y concentrations on the 2DEG is investigated in a Y concentration range from 3% to 15%. At 8% Y, a record mobility of 3200 cm2/(Vs) was measured at a low temperature (7 K). Room and low-temperature ns was at 1–2 × 1013 cm−2. Al0.92Y0.08N barriers were coherently strained to the GaN channel for barrier thicknesses from 5 to 15 nm. Finally, the deposition of Al1−xYxN/GaN heterostructures deposited on 4″ 4H–SiC wafers had a room-temperature mobility close to 1400 cm2/(Vs). AlYN/GaN heterostructures may offer advantages over AlScN/GaN heterostructures not only for the lower price and higher abundance of the raw material but also in terms of electrical characteristics and may be more suitable for power amplifying applications due to increased electron mobility.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"24 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140930592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Epitaxial oxide ionotronics: Interfaces and oxygen vacancies 外延氧化物离子电子学：界面和氧空位

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-05-01 DOI: 10.1063/5.0206822

Jill K. Wenderott, Tadesse Billo, Dillon D. Fong

引用次数: 0

Measurement of the coupling of magnetism with electricity or light irradiation in BiFeO3 using the Kerr angle 利用克尔角测量 BiFeO3 中磁性与电或光照射的耦合情况

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-05-01 DOI: 10.1063/5.0194274

Siwat Polin, Peerawat Laohana, Jirapat Kullapapinyokol, Warakorn Jindata, Supansa Musikajaroen, Aissara Rasritat, Hideki Nakajima, Wittawat Saenrang, Santi Maensiri, Chang-Beom Eom, Worawat Meevasana

引用次数: 0

Engineering of a charged incoherent BiFeO3/SrTiO3 interface 带电非相干 BiFeO3/SrTiO3 界面工程学

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-05-01 DOI: 10.1063/5.0203518

Dianxiang Ji, Yi Zhang, Wei Mao, Min Gu, Yiping Xiao, Yang Yang, Wei Guo, Zhengbin Gu, Jian Zhou, Peng Wang, Yuefeng Nie, Xiaoqing Pan

引用次数: 0

Atomic layer molecular beam epitaxy of kagome magnet RMn6Sn6 (R = Er, Tb) thin films 神目磁铁 RMn6Sn6（R = Er、Tb）薄膜的原子层分子束外延

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-04-26 DOI: 10.1063/5.0182595

Shuyu Cheng, Binzhi Liu, Igor Lyalin, Wenyi Zhou, Jinwoo Hwang, Roland K. Kawakami

引用次数: 0

Type-II Dirac phonons in a two-dimensional phononic crystal 二维声子晶体中的 II 型狄拉克声子

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-04-26 DOI: 10.1063/5.0189354

Changqing Xu, Jun Mei, Guancong Ma, Ying Wu

引用次数: 0

Modification of mono-layer MoS2 through post-deposition treatment and oxidation for enhanced optoelectronic properties 通过沉积后处理和氧化对单层 MoS2 进行改性以增强其光电特性

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-04-22 DOI: 10.1063/5.0189378

Jonathan Rommelfangen, Marco A. Gonzalez-Angulo, Devendra Pareek, Levent Gütay, Phillip J. Dale, Alex Redinger

{"title":"Modification of mono-layer MoS2 through post-deposition treatment and oxidation for enhanced optoelectronic properties","authors":"Jonathan Rommelfangen, Marco A. Gonzalez-Angulo, Devendra Pareek, Levent Gütay, Phillip J. Dale, Alex Redinger","doi":"10.1063/5.0189378","DOIUrl":"https://doi.org/10.1063/5.0189378","url":null,"abstract":"Precise control of the optical and electrical properties of mono-layer (ML) thin MoS2 is crucial for future applications in functional devices. Depending on the synthesis route and the post-deposition annealing protocols, the number of sulfur vacancies in the material is different, which has a profound impact on the properties of the 2D layer. Here, we show that the sulfur vacancy-rich ML MoS2 films oxidize already at room temperature, which changes the photoluminescence (PL) yield, the MoS2–Al2O3 substrate interaction, and the structural integrity of the films. We used x-ray photoelectron spectroscopy to monitor the formation of MoO3 and possibly MoS3−xOx after exposure to air and to quantify the number of sulfur defects in the films. Atomic force microscopy measurements allow us to pinpoint the exact regions of oxidation and develop a dedicated low temperature heating procedure to remove oxidized species, leading to MoO3-free MoS2 films. AFM and Kelvin probe force microscopy show that the MoS2–Al2O3 substrate coupling is changed. The reduction in the MoS2–substrate coupling, combined with a preferential oxidation of sulfur vacancies, leads to a sevenfold increase in the PL intensity, and the ratio between trions and neutral excitons is changed. Our work highlights the importance of oxidized sulfur vacancies and provides useful methods to measure and manipulate their number in MoS2. Furthermore, changes in the MoS2–substrate interaction via sulfur vacancies and oxidation offer an elegant pathway to tune the optoelectronic properties of the two-dimensional films.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"48 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140637015","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0