APL MaterialsPub Date : 2024-07-03DOI: 10.1063/5.0219633
Hongyuan Jiang, Xin Lv, Kai Wang
{"title":"Application of triboelectric nanogenerator in self-powered motion detection devices: A review","authors":"Hongyuan Jiang, Xin Lv, Kai Wang","doi":"10.1063/5.0219633","DOIUrl":"https://doi.org/10.1063/5.0219633","url":null,"abstract":"Among today’s bustling lifestyles, the demand for autonomous, durable, and low-maintenance healthcare systems has surged, surpassing that of earlier periods. Nanostructured and environmentally friendly materials employed in nanogenerator technology offer a novel avenue for biomedical applications by harnessing biomechanical energy. Triboelectric Nanogenerators (TENGs) have emerged as comprehensive solutions, furnishing self-sustaining, eco-conscious, and compact devices. Recognizing the immense potential of TENGs, this paper presents a comprehensive overview of its motion detection. Our analysis delves into the versatility of TENG-based motion detection systems, providing wearable, user-friendly solutions powered by human motion. Recent advancements in triboelectric devices are cataloged, elucidating their structural intricacies, capabilities, performance metrics, and future prospects. In addition, the article also outlines the applications of different TENGs in motion monitoring, including contact, non-contact, and single-electrode mode. The evolution of intelligent wearable technologies has extended our capacities in communication, healthcare, and various other domains beyond our biological limits. Apart from the Internet of Things, the concept of Internet of bodies or beings is poised for rapid advancement, promising further transformation of our lifestyles. Conclusively, we present insights into forthcoming opportunities and plausible strategies to address anticipated hurdles.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"48 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141549939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Dimensionality-driven power-law gap in the bilayer TaTe2 grown by molecular-beam epitaxy","authors":"Bruno Kenichi Saika, Satoshi Yoshida, Markel Pardo-Almanza, Natsuki Mitsuishi, Masato Sakano, Yuita Fujisawa, Yue Wang, Yoshihiro Iwasa, Hideki Matsuoka, Hidefumi Takahashi, Shintaro Ishiwata, Yoshinori Okada, Masaki Nakano, Kyoko Ishizaka","doi":"10.1063/5.0213957","DOIUrl":"https://doi.org/10.1063/5.0213957","url":null,"abstract":"Reducing dimensionality can induce profound modifications to the physical properties of a system. In two-dimensional TaS2 and TaSe2, the charge-density wave phase accompanies a Mott transition, thus realizing the strongly correlated insulating state. However, this scenario deviates from TaTe2 due to p–d hybridization, resulting in a substantial contribution of Te 5p at the Fermi level. Here, we show that, differently from the Mott insulating phase of its sister compounds, bilayer TaTe2 hosts a power-law (V-shaped) gap at the Fermi level reminiscent of a Coulomb gap. It suggests the possible role of unscreened long-range Coulomb interactions emerging in lowered dimensions, potentially coupled with a disordered short-range charge-density wave. Our findings reveal the importance of long-range interactions sensitive to interlayer screening, providing another venue for the interplay of complex quantum phenomena in two-dimensional materials.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"38 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141532143","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
APL MaterialsPub Date : 2024-07-02DOI: 10.1063/5.0218367
Dante J. O’Hara, Hsun-Jen Chuang, Kathleen M. McCreary, Mehmet A. Noyan, Sung-Joon Lee, Enrique D. Cobas, Berend T. Jonker
{"title":"Transfer of hexagonal boron nitride quantum emitters onto arbitrary substrates with zero thermal budget","authors":"Dante J. O’Hara, Hsun-Jen Chuang, Kathleen M. McCreary, Mehmet A. Noyan, Sung-Joon Lee, Enrique D. Cobas, Berend T. Jonker","doi":"10.1063/5.0218367","DOIUrl":"https://doi.org/10.1063/5.0218367","url":null,"abstract":"The van der Waals material hexagonal boron nitride (hBN) has emerged as a promising candidate for hosting room temperature single-photon emitters (SPEs) for next-generation quantum technologies. However, the requirement of a high temperature anneal (850 °C or higher) to activate the SPEs in hBN makes it difficult to integrate into hybrid structures that cannot tolerate such temperatures, including all silicon-based circuits. In this work, we present a method to deterministically activate quantum emitters in multilayered hBN on a process substrate, followed by a zero thermal budget transfer to a target substrate. This technique does not lead to any degradation or loss of photon purity in the hBN emitters and provides a procedure for combining high-purity emitters with other exciting photonic, magnetic, or electrical properties to explore new physical phenomena. The ability to transfer hBN emitters onto arbitrary substrates creates new technological possibilities to incorporate these quantum photonic properties into photonic integrated circuits and plasmonic devices.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"1 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141532144","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
APL MaterialsPub Date : 2024-07-01DOI: 10.1063/5.0206068
Zixin Fan, Qiangtao Sui, Feng Ran, Haoming Ling, Dingyi Li, Zihao Wang, Pan Chen, Yan Liang, Jiandi Zhang
{"title":"The origin of magnetic ordering and reduced mobility in KTaO3-based 2DEGs: Interfacial interdiffusion","authors":"Zixin Fan, Qiangtao Sui, Feng Ran, Haoming Ling, Dingyi Li, Zihao Wang, Pan Chen, Yan Liang, Jiandi Zhang","doi":"10.1063/5.0206068","DOIUrl":"https://doi.org/10.1063/5.0206068","url":null,"abstract":"Recently, KTaO3 (KTO)-based 5d two-dimensional electron gases (2DEGs), characterized by robust spin–orbit coupling, have emerged as promising candidates for future spintronic devices. However, the carrier mobility of KTO-based 2DEGs is typically lower than that of SrTiO3-based 2DEGs, which limits their further development. It is imperative to explore the underlying causes of diminished carrier mobility and devise strategies to augment it. In addition, the genesis of magnetism within KTO-based 2DEGs remains ambiguous. In this study, the 2DEG within the amorphous-EuTiO3/KTO (a-ETO/KTO) heterostructure demonstrates a high electron mobility of 289.1 cm2 V−1 s−1, which exhibits a significant decrease as the film growth temperatures increase. This decrease can be primarily ascribed to electron scattering by impurities, which is induced by the amplified interfacial element interdiffusion at a higher film growth temperature. In addition, the magnetism of 2DEGs for samples grown at different temperatures shows an increasing trend with growth temperatures, which is predominantly derived from the interdiffusion of Eu atoms. This study provides an in-depth analysis of the origin of magnetic ordering and reduced mobility in KTO-based 2DEGs, which will promote the further development of 2DEGs for future applications in electronic devices.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"9 10 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141532145","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
APL MaterialsPub Date : 2024-07-01DOI: 10.1063/5.0202851
Katja Kohopää, Alberto Ronzani, Robab Najafi Jabdaraghi, Arijit Bera, Mário Ribeiro, Dibyendu Hazra, Jorden Senior, Mika Prunnila, Joonas Govenius, Janne S. Lehtinen, Antti Kemppinen
{"title":"Effect of ion irradiation on superconducting thin films","authors":"Katja Kohopää, Alberto Ronzani, Robab Najafi Jabdaraghi, Arijit Bera, Mário Ribeiro, Dibyendu Hazra, Jorden Senior, Mika Prunnila, Joonas Govenius, Janne S. Lehtinen, Antti Kemppinen","doi":"10.1063/5.0202851","DOIUrl":"https://doi.org/10.1063/5.0202851","url":null,"abstract":"We demonstrate ion irradiation by argon or gallium as a wafer-scale post-processing method to increase disorder in superconducting thin films. We study several widely used superconductors, both single-elements and compounds. We show that ion irradiation increases normal-state resistivity in all our films, which is expected to enable tuning their superconducting properties, for example, toward a higher kinetic inductance. We observe an increase in superconducting transition temperature for Al and MoSi and a decrease for Nb, NbN, and TiN. In MoSi, ion irradiation also improves the mixing of the two materials. We demonstrate the fabrication of an amorphous and homogeneous film of MoSi with uniform thickness, which is promising, for example, for superconducting nanowire single-photon detectors.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"68 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141532146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
APL MaterialsPub Date : 2024-07-01DOI: 10.1063/5.0218374
Abdullah Al Mahfazur Rahman, Mohammad Tariqul Islam, Phumin Kirawanich, Badariah Bais, Haitham Alsaif, Abdulwadoud A. Maash, Ahasanul Hoque, Md. Moniruzzaman, Md. Shabiul Islam, Mohamed S. Soliman
{"title":"A highly sensitive modified triple split ring metamaterial-based sensor for blood sample detection based on dielectric property alteration","authors":"Abdullah Al Mahfazur Rahman, Mohammad Tariqul Islam, Phumin Kirawanich, Badariah Bais, Haitham Alsaif, Abdulwadoud A. Maash, Ahasanul Hoque, Md. Moniruzzaman, Md. Shabiul Islam, Mohamed S. Soliman","doi":"10.1063/5.0218374","DOIUrl":"https://doi.org/10.1063/5.0218374","url":null,"abstract":"This research paper demonstrates a metamaterial (MTM) based sensing technique to detect various blood samples by analyzing their dielectric properties. The performance of this MTM-based sensor is evaluated with the help of mimicked human blood samples that closely resemble the dielectric properties of actual human blood samples. Moreover, the ISM band frequency of 2.4 GHz is chosen as one of the reference resonance frequencies due to its various industrial and medical applications. The resonating patch is developed on the FR-4 substrate with a dimension of 10 × 20 mm2 that provides sharp reference resonances of 2.4 and 4.72 GHz for the spectra of the transmission coefficient with a good quality factor (Q-factor). The MTM sensor can detect the mimicked blood samples with a maximum frequency deviation of up to 650 MHz at 2.4 GHz and up to 850 MHz at 4.72 GHz, with maximum sensitivity of 0.917 and 0.707, respectively. The measured results using the prototype of the sensor support the simulation result with good agreement, indicating high sensing capability. Due to its high sensitivity, figure of merit (FoM), and frequency shifting with dielectric property changes in blood samples, the developed MTM-based sensor can be implemented effectively for quick sensing of infected blood samples and biomedical applications.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"321 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141509002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
APL MaterialsPub Date : 2024-06-26DOI: 10.1063/5.0214718
Takeshi Odagawa, Sota Yamamoto, Chaoliang Zhang, Kazuki Koyama, Jun Ishihara, Giacomo Mariani, Yoji Kunihashi, Haruki Sanada, Junsaku Nitta, Makoto Kohda
{"title":"Enhanced interlayer electron transfer by surface treatments in mixed-dimensional van der Waals semiconductor heterostructures","authors":"Takeshi Odagawa, Sota Yamamoto, Chaoliang Zhang, Kazuki Koyama, Jun Ishihara, Giacomo Mariani, Yoji Kunihashi, Haruki Sanada, Junsaku Nitta, Makoto Kohda","doi":"10.1063/5.0214718","DOIUrl":"https://doi.org/10.1063/5.0214718","url":null,"abstract":"We investigate the excitonic species in WS2 monolayers transferred onto III–V semiconductor substrates with different surface treatments. When the III–V substrates were covered with amorphous native oxides, negatively charged excitons dominated the spectral weight in low-temperature near-resonance photoluminescence (PL) measurements. However, when the native oxides of the III–V substrates were reduced, neutral excitons began to dominate the spectral weight, indicating a reduction in the electron density in the WS2 monolayers. The removal of the native oxides enhanced the electron transfer from the WS2 monolayer to the III–V substrate. In addition, an additional shoulder-like PL feature appeared ∼50 meV below the emission of neutral excitons, which can be attributed to the emission of localized excitons. When the III–V substrate surface was passivated by sulfur after the reduction of the native oxides, neutral excitons still dominated the spectral weight. However, the low-energy PL shoulder disappeared again, suggesting the effective delocalization of excitons through substrate surface passivation. Surface engineering of the semiconductor substrates for two-dimensional (2D) materials can provide a novel approach to control the carrier density of the 2D materials, implement deterministic carrier localization or delocalization for the 2D materials, and facilitate the interlayer transfer of charge, spin, and valley currents. These findings open the avenue for novel device concepts and phenomena in mixed-dimensional semiconductor heterostructures.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"40 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141509003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
APL MaterialsPub Date : 2024-06-01DOI: 10.1063/5.0210823
Cheng Li, Yang Yu, Peigeng Han, Wei Zhou, Hui Li, Ruifeng Lu
{"title":"Achieving versatile optoelectronic applications of environment-friendly halide double perovskite by multi-ion codoping strategy","authors":"Cheng Li, Yang Yu, Peigeng Han, Wei Zhou, Hui Li, Ruifeng Lu","doi":"10.1063/5.0210823","DOIUrl":"https://doi.org/10.1063/5.0210823","url":null,"abstract":"Lead-free halide double perovskites (DPs) have been regarded as a class of environmentally friendly and promising optoelectronic materials. Herein, we report the synthesis, luminescence properties, and optoelectronic applications of lanthanide (Ln = Yb3+/Er3+)/M (M = Bi3+/Sb3+/Mn2+) codoped Cs2NaInCl6 single crystals (SCs). The Yb/Er codoped Cs2NaInCl6 SCs show upconversion and downshifting visible/short-wave infrared (SWIR) photoluminescence emission. After further introduction of Sb3+/Mn2+ ions into the host, bright blue and red emissions are observed with the PLQYs of 96.28% and 21.58%, respectively. With the incorporation of Bi3+ ions, the upconversion and visible/SWIR luminescence intensities of Yb/Er/Bi codoped Cs2NaInCl6 SCs are significantly enhanced. The incorporation of Bi3+ dopant in the DP host can construct a more efficient energy transfer process, resulting in excellent luminescence efficiency. The multi-ion codoped DP system exhibits great potential for optoelectronic applications in the fields of anticounterfeiting, photodetector, and x-ray imaging. This work will help guide the design and development of environmentally friendly multi-functional materials.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"12 6","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.aip.org/aip/apm/article-pdf/doi/10.1063/5.0210823/19998868/061118_1_5.0210823.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147906229","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
APL MaterialsPub Date : 2024-05-30DOI: 10.1063/5.0188767
Sourav Chowdhury, Anupam Jana, Ritu Rawat, Priyanka Yadav, Rajibul Islam, Fei Xue, A. K. Mandal, Sumit Sarkar, Rajan Mishra, R. Venkatesh, D. M. Phase, R. J. Choudhary
{"title":"High-temperature insulating ferromagnetic state in charge-disproportionated and spin-state-disproportionated strained SrCoO2.5 thin film","authors":"Sourav Chowdhury, Anupam Jana, Ritu Rawat, Priyanka Yadav, Rajibul Islam, Fei Xue, A. K. Mandal, Sumit Sarkar, Rajan Mishra, R. Venkatesh, D. M. Phase, R. J. Choudhary","doi":"10.1063/5.0188767","DOIUrl":"https://doi.org/10.1063/5.0188767","url":null,"abstract":"Ferromagnetic insulators (FMIs) have widespread applications in microwave devices, magnetic tunneling junctions, and dissipationless electronic and quantum-spintronic devices. However, the sparsity of the available high-temperature FMIs has led to the quest for a robust and controllable insulating ferromagnetic state. Here, we present compelling evidence of modulation of the magnetic ground state in a SrCoO2.5 (SCO) thin film via strain engineering. The SCO system is an antiferromagnetic insulator with a Neel temperature, TN, of ∼550 K. Applying in-plane compressive strain, the SCO thin film reveals an insulating ferromagnetic state with an extraordinarily high Curie temperature, TC, of ∼750 K. The emerged ferromagnetic state is associated with charge-disproportionation (CD) and spin-state-disproportionation (SSD), involving high-spin Co2+ and low-spin Co4+ ions. The density functional theory calculation also produces an insulating ferromagnetic state in the strained SCO system, consistent with the CD and SSD, which is associated with the structural ordering in the system. Transpiring the insulating ferromagnetic state through modulating the electronic correlation parameters via strain engineering in the SCO thin film will have a significant impact in large areas of modern electronic and spintronic applications.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"1009 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-05-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141191523","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
APL MaterialsPub Date : 2024-05-30DOI: 10.1063/5.0203995
Arturas Vailionis, Liyan Wu, Jonathan E. Spanier
{"title":"Reciprocal space x-ray computed tomography","authors":"Arturas Vailionis, Liyan Wu, Jonathan E. Spanier","doi":"10.1063/5.0203995","DOIUrl":"https://doi.org/10.1063/5.0203995","url":null,"abstract":"Three-dimensional reciprocal space mapping (3D-RSM) offers crucial insights into the intricate microstructural properties of materials, including spatial domain distribution, directional long-range ordering, multilayer-substrate mismatch, layer tilting, and defect structure. Traditionally, 3D-RSMs are conducted at synchrotron facilities where instrumental resolution is constrained in all three directions. Lab-based sources have often been considered suboptimal for 3D-RSM measurements due to poor instrumental resolution along the axial direction. However, we demonstrate that, by employing three-dimensional reciprocal space x-ray computed tomography (RS-XCT), the same perceived limitation in resolution can be effectively leveraged to acquire high quality 3D-RSMs. Through a combination of ultrafast reciprocal space mapping and computed tomography reconstruction routines, lab-based 3D-RSMs achieve resolutions comparable to those obtained with synchrotron-based techniques. RS-XCT introduces a practical modality for lab-based x-ray diffractometers, enabling high-resolution 3D-RSM measurements on a variety of materials exhibiting complex three-dimensional scattering landscapes in reciprocal space.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"46 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-05-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141191190","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}