Olivio Chiatti, Johannes Boy, Christian Heyn, Wolfgang Hansen, Saskia F. Fischer
{"title":"InAs 基量子阱中自旋分辨朗道水平的面内栅极诱导转变不对称现象","authors":"Olivio Chiatti, Johannes Boy, Christian Heyn, Wolfgang Hansen, Saskia F. Fischer","doi":"10.1063/5.0203097","DOIUrl":null,"url":null,"abstract":"The crossover from quasi-two- to quasi-one-dimensional electron transport subject to transverse electric fields and perpendicular magnetic fields is studied in the diffusive to quasi-ballistic and zero-field to quantum Hall regime. In-plane gates and Hall-bars have been fabricated from an InGaAs/InAlAs/InAs quantum well hosting a 2DEG with a carrier density of about 6.8 × 1011 cm−2, a mobility of 1.8 × 105 cm2/Vs, and an effective mass of 0.042me after illumination. Magnetotransport measurements at temperatures down to 50 mK and fields up to 12 T yield a high effective Landé factor of g*=16, enabling the resolution of spin-split subbands at magnetic fields of 2.5 T. In the quantum Hall regime, electrostatic control of an effective constriction width enables steering of the reflection and transmission of edge channels, allowing a separation of fully spin-polarized edge channels at filling factors ν = 1 und ν = 2. A change in the orientation of a transverse in-plane electric field in the constriction shifts the transition between Zeeman-split quantum Hall plateaus by ΔB ≈ 0.1 T and is consistent with an effective magnetic field of Beff ≈ 0.13 T by spin-dependent backscattering, indicating a change in the spin-split density of states.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"42 1","pages":""},"PeriodicalIF":5.3000,"publicationDate":"2024-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"In-plane gate induced transition asymmetry of spin-resolved Landau levels in InAs-based quantum wells\",\"authors\":\"Olivio Chiatti, Johannes Boy, Christian Heyn, Wolfgang Hansen, Saskia F. Fischer\",\"doi\":\"10.1063/5.0203097\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The crossover from quasi-two- to quasi-one-dimensional electron transport subject to transverse electric fields and perpendicular magnetic fields is studied in the diffusive to quasi-ballistic and zero-field to quantum Hall regime. In-plane gates and Hall-bars have been fabricated from an InGaAs/InAlAs/InAs quantum well hosting a 2DEG with a carrier density of about 6.8 × 1011 cm−2, a mobility of 1.8 × 105 cm2/Vs, and an effective mass of 0.042me after illumination. Magnetotransport measurements at temperatures down to 50 mK and fields up to 12 T yield a high effective Landé factor of g*=16, enabling the resolution of spin-split subbands at magnetic fields of 2.5 T. In the quantum Hall regime, electrostatic control of an effective constriction width enables steering of the reflection and transmission of edge channels, allowing a separation of fully spin-polarized edge channels at filling factors ν = 1 und ν = 2. A change in the orientation of a transverse in-plane electric field in the constriction shifts the transition between Zeeman-split quantum Hall plateaus by ΔB ≈ 0.1 T and is consistent with an effective magnetic field of Beff ≈ 0.13 T by spin-dependent backscattering, indicating a change in the spin-split density of states.\",\"PeriodicalId\":7985,\"journal\":{\"name\":\"APL Materials\",\"volume\":\"42 1\",\"pages\":\"\"},\"PeriodicalIF\":5.3000,\"publicationDate\":\"2024-05-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"APL Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1063/5.0203097\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"APL Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1063/5.0203097","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
In-plane gate induced transition asymmetry of spin-resolved Landau levels in InAs-based quantum wells
The crossover from quasi-two- to quasi-one-dimensional electron transport subject to transverse electric fields and perpendicular magnetic fields is studied in the diffusive to quasi-ballistic and zero-field to quantum Hall regime. In-plane gates and Hall-bars have been fabricated from an InGaAs/InAlAs/InAs quantum well hosting a 2DEG with a carrier density of about 6.8 × 1011 cm−2, a mobility of 1.8 × 105 cm2/Vs, and an effective mass of 0.042me after illumination. Magnetotransport measurements at temperatures down to 50 mK and fields up to 12 T yield a high effective Landé factor of g*=16, enabling the resolution of spin-split subbands at magnetic fields of 2.5 T. In the quantum Hall regime, electrostatic control of an effective constriction width enables steering of the reflection and transmission of edge channels, allowing a separation of fully spin-polarized edge channels at filling factors ν = 1 und ν = 2. A change in the orientation of a transverse in-plane electric field in the constriction shifts the transition between Zeeman-split quantum Hall plateaus by ΔB ≈ 0.1 T and is consistent with an effective magnetic field of Beff ≈ 0.13 T by spin-dependent backscattering, indicating a change in the spin-split density of states.
期刊介绍:
APL Materials features original, experimental research on significant topical issues within the field of materials science. In order to highlight research at the forefront of materials science, emphasis is given to the quality and timeliness of the work. The journal considers theory or calculation when the work is particularly timely and relevant to applications.
In addition to regular articles, the journal also publishes Special Topics, which report on cutting-edge areas in materials science, such as Perovskite Solar Cells, 2D Materials, and Beyond Lithium Ion Batteries.