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Ni3S2 particle–embedded nanotubes as a high-performance electrocatalyst for overall water splitting 作为整体水分离高性能电催化剂的嵌入式纳米管 Ni3S2 粒子
IF 6.1 2区 材料科学
APL Materials Pub Date : 2024-09-11 DOI: 10.1063/5.0225168
Pengcheng Zhu, Li Ye, Xiaolei Li, Tianxing Wang, Yao Zhong, Lin Zhuang
{"title":"Ni3S2 particle–embedded nanotubes as a high-performance electrocatalyst for overall water splitting","authors":"Pengcheng Zhu, Li Ye, Xiaolei Li, Tianxing Wang, Yao Zhong, Lin Zhuang","doi":"10.1063/5.0225168","DOIUrl":"https://doi.org/10.1063/5.0225168","url":null,"abstract":"Hydrogen evolution reactions (HERs) and oxygen evolution reactions (OERs) are crucial for renewable energy production. Developing stable, cost-effective, and highly catalytic HER and OER electrocatalysts is paramount. In this study, a combination of hydrothermal synthesis and annealing was used to fabricate nickel sulfide (Ni3S2) particle–embedded nanotubes supported on nickel (Ni) foam (Ni3S2 PN/NF). The Ni3S2 PN/NF structures featured a highly branched morphology with a large specific surface area, surpassing that of conventional Ni metal nanotubes. This design increased the number of reactive sites and enhanced the charge-transfer process. The Ni foam substrate expanded the contact area of Ni3S2, thereby improving conductivity and facilitating the adsorption/desorption of intermediates on the Ni3S2 surface. Density functional theory calculations showed that the electronic structure of Ni3S2 provides excellent conductivity. Moreover, the multi-branched structure and inherent conductivity of the NiS nanomaterials enhanced the Ni3S2 PN/NF performance in 1M KOH, with overpotentials of 87 and 210 mV with iR compensation at 10 mA cm−2 for the HER and OER, respectively. The synthesized Ni3S2 PN/NF also exhibited robust durability for 20 h. These results demonstrate that Ni3S2 PN/NF is an excellent catalyst for both HER and OER.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":null,"pages":null},"PeriodicalIF":6.1,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142197806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Comprehensive characterization of nitrogen-related defect states in β-Ga2O3 using quantitative optical and thermal defect spectroscopy methods 利用定量光学和热缺陷光谱法全面表征 β-Ga2O3 中的氮相关缺陷态
IF 6.1 2区 材料科学
APL Materials Pub Date : 2024-09-11 DOI: 10.1063/5.0225570
Hemant Ghadi, Evan Cornuellue, Joe F. Mcglone, Alexander Senckowski, Shivam Sharma, Man Hoi Wong, Uttam Singisetti, Steven A. Ringel
{"title":"Comprehensive characterization of nitrogen-related defect states in β-Ga2O3 using quantitative optical and thermal defect spectroscopy methods","authors":"Hemant Ghadi, Evan Cornuellue, Joe F. Mcglone, Alexander Senckowski, Shivam Sharma, Man Hoi Wong, Uttam Singisetti, Steven A. Ringel","doi":"10.1063/5.0225570","DOIUrl":"https://doi.org/10.1063/5.0225570","url":null,"abstract":"This study provides a comprehensive analysis of the dominant deep acceptor level in nitrogen-doped beta-phase gallium oxide (β-Ga2O3), elucidating and reconciling the hole emission features observed in deep-level optical spectroscopy (DLOS). The unique behavior of this defect, coupled with its small optical cross section, complicates trap concentration analysis using DLOS, which is essential for defect characterization in β-Ga2O3. A complex feature arises in DLOS results due to simultaneous electron emission to the conduction band and hole emission to the valence band from the same defect state, indicating the formation of two distinct atomic configurations and suggesting metastable defect characteristics. This study discusses the implications of this behavior on DLOS analysis and employs advanced spectroscopy techniques such as double-beam DLOS and optical isothermal measurements to address these complications. The double-beam DLOS method reveals a distinct hole emission process at EV+1.3 eV previously obscured in conventional DLOS. Optical isothermal measurements further characterize this energy level, appearing only in N-doped β-Ga2O3. This enables an estimate of the β-Ga2O3 hole effective mass by analyzing temperature-dependent carrier emission rates. This work highlights the impact of partial trap-filling behavior on DLOS analysis and identifies the presence of hole trapping and emission in β-Ga2O3. Although N-doping is ideal for creating semi-insulating material through the efficient compensation of free electrons, this study also reveals a significant hole emission and migration process within the weak electric fields of the Schottky diode depletion region.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":null,"pages":null},"PeriodicalIF":6.1,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142197796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Adsorption-controlled growth of homoepitaxial c-plane sapphire films 同向外延 C 面蓝宝石薄膜的吸附控制生长
IF 6.1 2区 材料科学
APL Materials Pub Date : 2024-09-11 DOI: 10.1063/5.0224092
Lena N. Majer, Tolga Acartürk, Peter A. van Aken, Wolfgang Braun, Luca Camuti, Johan Eckl-Haese, Jochen Mannhart, Takeyoshi Onuma, Ksenia S. Rabinovich, Darrell G. Schlom, Sander Smink, Ulrich Starke, Jacob Steele, Patrick Vogt, Hongguang Wang, Felix V. E. Hensling
{"title":"Adsorption-controlled growth of homoepitaxial c-plane sapphire films","authors":"Lena N. Majer, Tolga Acartürk, Peter A. van Aken, Wolfgang Braun, Luca Camuti, Johan Eckl-Haese, Jochen Mannhart, Takeyoshi Onuma, Ksenia S. Rabinovich, Darrell G. Schlom, Sander Smink, Ulrich Starke, Jacob Steele, Patrick Vogt, Hongguang Wang, Felix V. E. Hensling","doi":"10.1063/5.0224092","DOIUrl":"https://doi.org/10.1063/5.0224092","url":null,"abstract":"Sapphire is a technologically highly relevant material, but it poses many challenges when performing epitaxial thin-film deposition. We have identified and applied the conditions for adsorption-controlled homoepitaxial growth of c-plane sapphire. The films thus grown are atomically smooth, have a controlled termination, and are of outstanding crystallinity. Their chemical purity exceeds that of the substrates. The films exhibit exceptional optical properties, such as a single-crystal-like bandgap and a low density of F+ centers.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":null,"pages":null},"PeriodicalIF":6.1,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142197795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Improvement of voltage-controlled magnetic anisotropy effect by inserting an ultrathin metal capping layer 通过插入超薄金属盖层改善电压控制的磁各向异性效应
IF 6.1 2区 材料科学
APL Materials Pub Date : 2024-09-11 DOI: 10.1063/5.0222313
Takayuki Nozaki, Tomohiro Ichinose, Tatsuya Yamamoto, Kay Yakushiji, Shinji Yuasa
{"title":"Improvement of voltage-controlled magnetic anisotropy effect by inserting an ultrathin metal capping layer","authors":"Takayuki Nozaki, Tomohiro Ichinose, Tatsuya Yamamoto, Kay Yakushiji, Shinji Yuasa","doi":"10.1063/5.0222313","DOIUrl":"https://doi.org/10.1063/5.0222313","url":null,"abstract":"We report systematic investigations of the effect of ultrathin capping layer insertion on the magnetic, magnetotransport, and voltage-controlled magnetic anisotropy (VCMA) properties in magnetic tunnel junctions (MTJs) with top free layer structure. Various kinds of ultrathin capping materials (Ir, Mo, TaB, Mg, Cr, Ti, and Ta) were introduced into the top free layer structure, which is comprised of MgO/CoFeB/X/MgO, where X is the inserted capping material. On insertion of an ultrathin Ir capping layer thinner than 0.3 nm, both the perpendicular magnetic anisotropy and the VCMA efficiency were improved by approximately a factor of two compared to the case without inserting an ultrathin metal capping layer. Mo insertion was also seen to be effective in improving the annealing tolerance. The developed structure can provide a novel approach for the development of high-performance voltage-driven MTJs, which can be applied, for example, for voltage-controlled magnetoresistive random access memory.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":null,"pages":null},"PeriodicalIF":6.1,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142197824","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
α-Ta films on c-plane sapphire with enhanced microstructure 具有增强微观结构的 c 平面蓝宝石上的α-Ta 薄膜
IF 6.1 2区 材料科学
APL Materials Pub Date : 2024-09-06 DOI: 10.1063/5.0218021
Lena N. Majer, Sander Smink, Wolfgang Braun, Bernhard Fenk, Varun Harbola, Benjamin Stuhlhofer, Hongguang Wang, Peter A. van Aken, Jochen Mannhart, Felix V. E. Hensling
{"title":"α-Ta films on c-plane sapphire with enhanced microstructure","authors":"Lena N. Majer, Sander Smink, Wolfgang Braun, Bernhard Fenk, Varun Harbola, Benjamin Stuhlhofer, Hongguang Wang, Peter A. van Aken, Jochen Mannhart, Felix V. E. Hensling","doi":"10.1063/5.0218021","DOIUrl":"https://doi.org/10.1063/5.0218021","url":null,"abstract":"Superconducting films of α-Ta are promising candidates for the fabrication of advanced superconducting qubits. However, α-Ta films suffer from many growth-induced structural inadequacies that negatively affect their performance. We have therefore explored a new synthesis method for α-Ta films, which allows for the growth of these films with an unprecedented quality. Using this method, high quality α-Ta films are deposited at a comparably high substrate temperature of 1150 °C. They are single-phase α-Ta and have a single out-of-plane (110) orientation. They consist of grains ≥2 μm that have one of three possible in-plane orientations. As shown by scanning transmission electron microscopy and electron energy loss studies, the substrate–film interfaces are sharp with no observable intermixing. The obtained insights into the epitaxial growth of body-centered-cubic films on quasi-hexagonal substrates lay the basis for harnessing the high structural coherence of such films in various applications.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":null,"pages":null},"PeriodicalIF":6.1,"publicationDate":"2024-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142197797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Growth of bilayer transition metal dichalcogenides at controlled locations 在受控位置生长双层过渡金属二钙化物
IF 6.1 2区 材料科学
APL Materials Pub Date : 2024-09-05 DOI: 10.1063/5.0221397
Chengyu Wen, Carl H. Naylor, Kevin P. O’Brien, Adedapo Oni, Mahmut S. Kavrik, Yeonjoon Suh, A. T. Charlie Johnson
{"title":"Growth of bilayer transition metal dichalcogenides at controlled locations","authors":"Chengyu Wen, Carl H. Naylor, Kevin P. O’Brien, Adedapo Oni, Mahmut S. Kavrik, Yeonjoon Suh, A. T. Charlie Johnson","doi":"10.1063/5.0221397","DOIUrl":"https://doi.org/10.1063/5.0221397","url":null,"abstract":"Layered transition metal dichalcogenide (TMD) materials have attracted great interest for applications in electronics. Here, we report a method to synthesize TMD materials at controlled locations with the desired layer number. Metal oxide precursors are patterned on the growth substrate by photolithography, and then a mixture of sodium chloride and sodium cholate growth promoters is applied to enable the growth of monolayer and bilayer TMDs with large flake sizes. The quality of the bilayer flakes is examined by atomic force microscopy, Auger electron spectroscopy, Raman spectroscopy, photoluminescence spectroscopy, and transmission electron microscopy. Electrical performance is evaluated by fabricating three-terminal field-effect transistors that demonstrate high carrier mobilities and on/off ratios larger than 105. This approach provides insights into future device applications and integration strategies based on layered TMD materials.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":null,"pages":null},"PeriodicalIF":6.1,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142197798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Composition and strain of the pseudomorphic α-phase intermediate layer at the Ga2O3/Al2O3 interface Ga2O3/Al2O3 界面伪α相中间层的成分和应变
IF 6.1 2区 材料科学
APL Materials Pub Date : 2024-09-05 DOI: 10.1063/5.0226857
M. Schowalter, A. Karg, M. Alonso-Orts, J. A. Bich, S. Raghuvansy, M. S. Williams, F. F. Krause, T. Grieb, C. Mahr, T. Mehrtens, P. Vogt, A. Rosenauer, M. Eickhoff
{"title":"Composition and strain of the pseudomorphic α-phase intermediate layer at the Ga2O3/Al2O3 interface","authors":"M. Schowalter, A. Karg, M. Alonso-Orts, J. A. Bich, S. Raghuvansy, M. S. Williams, F. F. Krause, T. Grieb, C. Mahr, T. Mehrtens, P. Vogt, A. Rosenauer, M. Eickhoff","doi":"10.1063/5.0226857","DOIUrl":"https://doi.org/10.1063/5.0226857","url":null,"abstract":"We investigate the composition of α-phase intermediate layers at epitaxial Ga2O3/Al2O3 interfaces using high angle annular dark field scanning transmission electron microscopy. Their presence is considered a general phenomenon as they are observed independent of the growth technique [Schewski et al., Appl. Phys. Exp. 8, 011101]. Samples were grown by plasma assisted molecular beam epitaxy using different growth conditions. Almost independent of these, the quantitative evaluation of the measured intensities gave Ga concentrations of ∼25%. We show that the previously published model, based on a pure α-Ga2O3 interlayer, fails if it is adapted to the measured composition. Density functional theory (DFT) computations were used to overcome the approximations made in this model and suggest that a stabilization of the layer is possible due to the low Ga concentration (≤35%) at which the α-phase is the most stable. Our surface model computations suggest an exchange of Ga atoms at the surface with Al atoms from the underlying substrate as a possible formation mechanism.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":null,"pages":null},"PeriodicalIF":6.1,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142197802","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Intra-family transformation of the Bi–Te family via in situ chemical interactions 通过原位化学作用实现双碲族的族内转化
IF 6.1 2区 材料科学
APL Materials Pub Date : 2024-09-05 DOI: 10.1063/5.0223779
Zhihao He, Tin Seng Manfred Ho, Chen Ma, Jiannong Wang, Rolf Lortz, Iam Keong Sou
{"title":"Intra-family transformation of the Bi–Te family via in situ chemical interactions","authors":"Zhihao He, Tin Seng Manfred Ho, Chen Ma, Jiannong Wang, Rolf Lortz, Iam Keong Sou","doi":"10.1063/5.0223779","DOIUrl":"https://doi.org/10.1063/5.0223779","url":null,"abstract":"The Bi–Te binary system, characterized by the homologous series of (Bi2)m(Bi2Te3)n, has always attracted research interest for its layered structures and potential in advanced material applications. Despite the fact that Bi2Te3 has been extensively studied, the exploration of other compounds has been constrained by synthesis challenges. This study reports the molecular beam epitaxy growth of FeTe on Bi2Te3, demonstrating that varying growth conditions can turn the Bi2Te3 layer into different Bi–Te phases and form corresponding FeTe/Bi–Te heterostructures. Our combined analysis using reflection high-energy electron diffraction, high-resolution x-ray diffraction, and high-resolution scanning transmission electron microscopy indicates that specific growth conditions used for the growth of the FeTe layer can facilitate the extraction of Te from Bi2Te3, leading to the formation of Bi4Te3 and Bi6Te3. In addition, by lowering the FeTe growth temperature to 230 °C, Te extraction from the Bi2Te3 layer could be avoided, preserving the Bi2Te3 structure. Notably, all three FeTe/Bi–Te structures exhibit superconductivity, with the FeTe/Bi2Te3 heterostructure enjoying the highest superconductivity quality. The results of magneto-transport measurements indicate that the induced superconductivity displays a three-dimensional nature. These findings introduce a novel method for realizing Bi4Te3 and Bi6Te3 through Te extraction by growing FeTe on Bi2Te3, driven by the high reactivity between Fe and Te. This approach holds promise for synthesizing other members of the Bi–Te series, expanding the functional potential of these materials.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":null,"pages":null},"PeriodicalIF":6.1,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142197800","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Material discovery and modeling acceleration via machine learning 通过机器学习加速材料发现和建模
IF 6.1 2区 材料科学
APL Materials Pub Date : 2024-09-04 DOI: 10.1063/5.0230677
Carmine Zuccarini, Karthikeyan Ramachandran, Doni Daniel Jayaseelan
{"title":"Material discovery and modeling acceleration via machine learning","authors":"Carmine Zuccarini, Karthikeyan Ramachandran, Doni Daniel Jayaseelan","doi":"10.1063/5.0230677","DOIUrl":"https://doi.org/10.1063/5.0230677","url":null,"abstract":"This paper delves into the transformative role of Machine Learning (ML) and Artificial Intelligence (AI) in materials science, spotlighting their capability to expedite the discovery and development of newer, more efficient, and stronger compounds. It underscores the shift from traditional, resource-intensive approaches toward data-driven methodologies that leverage large datasets to predict properties, identify new materials, and optimize synthesis conditions with a satisfactory level of accuracy. Highlighting various techniques, including supervised, unsupervised, and reinforcement learning, alongside deep learning potential, the chapter presents case studies and applications ranging from predicting stress points in stochastic fields to optimizing thermal protection systems for spacecraft re-entry. It also explores the challenges and future directions, emphasizing the need for integrating experimental validations and developing tailored algorithms to overcome data and computational constraints. The narrative showcases ML and AI’s promise in revolutionizing material discovery, paving the way for innovative solutions in science and engineering.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":null,"pages":null},"PeriodicalIF":6.1,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142197799","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nanozyme microspheres with structural color-coding labels for synergistic therapy of psoriasis 用于银屑病协同治疗的带结构色标的纳米酶微球
IF 6.1 2区 材料科学
APL Materials Pub Date : 2024-09-03 DOI: 10.1063/5.0229803
Nengjie Yang, Yuting Huang, Chen Dong, Chi Sun, Peipei Xi, Yuexiao Dai, Rui Zhao, Yunan Wang, Yujuan Zhu, Zhifeng Gu
{"title":"Nanozyme microspheres with structural color-coding labels for synergistic therapy of psoriasis","authors":"Nengjie Yang, Yuting Huang, Chen Dong, Chi Sun, Peipei Xi, Yuexiao Dai, Rui Zhao, Yunan Wang, Yujuan Zhu, Zhifeng Gu","doi":"10.1063/5.0229803","DOIUrl":"https://doi.org/10.1063/5.0229803","url":null,"abstract":"Psoriasis is an immune system-mediated skin disease identified by the appearance of erythematous as a central symptom. As a recurrent and chronic inflammatory disease, psoriasis is influenced by both genetic and environmental factors and is known to be with no effective cure. Considering a multifaceted etiology of psoriasis, synergistic therapy exhibits great benefits over monotherapy, which becomes common for the treatment of various diseases. Herein, we present the nanozyme microspheres with structural color-coding labels for synergistic therapy of psoriasis. In particular, microsphere hydrogel is fabricated by the edible hydroxypropyl cellulose (HPC), which can generate a photonic liquid crystalline mesophase under lyotropic conditions in solution. Through adjustment of hydrogel components, microspheres endow with different functions, including moisturizing (paraffin), cfDNA scavenging (chitosan), and anti-inflammation (cerium oxide nanozyme). To improve patient convenience, hydrogel drops with different properties are tailored with different vivid structural colors by exploiting the lyotropic behavior of HPC. Of particular note, both in vitro and in vivo experiments have demonstrated the significant therapeutic effects of the encoded structural color microspheres. Green moisturizing microspheres facilitate to relieve dry, flaky skin patches; blue cfDNA scavenging and red anti-inflammatory microspheres significantly reduce skin inflammation. More importantly, combination therapy with encoded microspheres exerted the synergistic effects, including the increased body weight, thicker epidermal layer, and reduced immune activation. Overall, this synergistic treatment offers a promising platform for personalized management of psoriasis and various inflammatory skin diseases.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":null,"pages":null},"PeriodicalIF":6.1,"publicationDate":"2024-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142197801","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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