APL Materials最新文献_第9页

Harnessing nonlocal effects for wave localization and multi-frequency rainbow trapping in periodic structures 利用非局部效应实现周期性结构中的波定位和多频彩虹捕获

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-07-18 DOI: 10.1063/5.0201585

Jiao Wang, Nan Gao, Weiqiu Chen

引用次数: 0

Air vehicle humidity sensor based on PVA film humidity sensing principle 基于 PVA 薄膜湿度传感原理的空气车辆湿度传感器

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-07-18 DOI: 10.1063/5.0213766

Bo Wang, Bei Han, Ke Wang, Shengli Cao

{"title":"Air vehicle humidity sensor based on PVA film humidity sensing principle","authors":"Bo Wang, Bei Han, Ke Wang, Shengli Cao","doi":"10.1063/5.0213766","DOIUrl":"https://doi.org/10.1063/5.0213766","url":null,"abstract":"In order to ensure the flight safety of an aircraft and reduce the loss of humidity to the precision instruments and equipment in the aircraft, this study designs a small-size resonator antenna shape based on Radio Frequency Identification (RFID) technology and sensor principles. The resonator antenna makes use of the characteristics of the square ring and bent resonator and, at the same time, adopts the polyvinyl alcohol film with strong hygroscopic performance as the moisture-sensitive material. The equivalent resonant circuit of the sensor is constructed, and the parameters are optimized according to the principle of “coarse tuning of inductance parameters and fine tuning of capacitance parameters” to determine the optimal size. The relationship between the resonance frequency and the resonance response of humidity was investigated by the optimized model of the RFID resonator and polyvinyl alcohol (PVA). The simulation results show that as the relative humidity increases from 29.1 %RH to 90.9 %RH, the dielectric constant of the PVA film increases from 5.3 to 22 and the resonance frequency of the resonator decreases significantly from 4.74 to 4.12 GHz, with a total offset of 620 MHz, and the sensitivity is as high as 10.03 MHz/%RH. The results show that the designed sensor has a high sensitivity to humidity changes and a wide humidity detection range, providing an advanced solution for the detection and control of humidity inside aircraft.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"23 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141739731","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fabrication of pristine 2D heterostructures for scanning probe microscopy 制造用于扫描探针显微镜的原始二维异质结构

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-07-17 DOI: 10.1063/5.0213542

James McKenzie, Nileema Sharma, Xiaolong Liu

{"title":"Fabrication of pristine 2D heterostructures for scanning probe microscopy","authors":"James McKenzie, Nileema Sharma, Xiaolong Liu","doi":"10.1063/5.0213542","DOIUrl":"https://doi.org/10.1063/5.0213542","url":null,"abstract":"Material-by-design has been a long-standing aspiration that has recently become a reality. Such designer materials have been repeatedly demonstrated using the top-down approach of mechanical exfoliation and stacking, leading to a variety of artificial 2D heterostructures with new properties that are otherwise unattainable. Consequently, tremendous research frontiers in physics, chemistry, engineering, and life science have been created. While thousands of layered crystals exist in nature, only a few dozen of them with manageable chemical-stability have been made into heterostructures using this method. Moreover, experimental investigations of materials that have received limited exploration in the 2D realm, such as cuprates, halides, and perovskites, along with their heterostructures, have been fundamentally hindered by their rapid chemical degradation. Another critical challenge imposed by exfoliating and stacking 2D layers in ambient environment is the absorption of itinerant gas molecules that further contaminate sensitive 2D interfaces in the heterostructures. Such contamination and compromised material properties significantly hinder surface-sensitive local probes—scanning probe microscopy (SPM)—that often require nanometer to atomic scale surface cleanliness. In this article, we aim to provide a technical review of recent development toward 2D materials and heterostructure fabrication in more controlled environments that are suitable for SPM characterizations. These include the development of more efficient mechanical exfoliation and dry-transfer techniques, as well as the incorporation of 2D material exfoliation and transfer in inert gas, low vacuum, and, eventually, ultra-high vacuum environments. Finally, we provide an outlook on the remaining challenges and opportunities in ultra-clean 2D material fabrication techniques.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"61 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-07-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141739799","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electric field enhancement of the superconducting spin-valve effect via strain-transfer across a ferromagnetic/ferroelectric interface 通过铁磁/铁电界面上的应变传递实现超导自旋阀效应的电场增强

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-07-17 DOI: 10.1063/5.0211769

Tomohiro Kikuta, Sachio Komori, Keiichiro Imura, Tomoyasu Taniyama

{"title":"Electric field enhancement of the superconducting spin-valve effect via strain-transfer across a ferromagnetic/ferroelectric interface","authors":"Tomohiro Kikuta, Sachio Komori, Keiichiro Imura, Tomoyasu Taniyama","doi":"10.1063/5.0211769","DOIUrl":"https://doi.org/10.1063/5.0211769","url":null,"abstract":"In a ferromagnet/superconductor/ferromagnet (F/S/F) superconducting spin-valve (SSV), a change in the magnetization alignment of the two F layers modulates the critical temperature (Tc) of the S layer. The Tc-switching effect (the SSV effect) is based on the interplay between superconductivity and magnetism. The fast and large resistive switching associated with Tc-switching is suitable for nonvolatile cryogenic memory applications. However, the external magnetic field-based operation of SSVs is hindering their miniaturization, and therefore, electric field control of the SSV effect is desired. Here, we report epitaxial growth of a La0.67Ca0.33MnO3/YBa2Cu3O7/La0.67Ca0.33MnO3 SSV on a piezo-electric [Pb(Mg0.33Nb0.67)O3]0.7-[PbTiO3]0.3 (001) substrate and demonstrate electric field control of the SSV effect. Electric field-induced strain-transfer from the piezo-electric substrate increases the magnetization and Tc of the SSV and leads to an enhancement of the magnitude of Tc-switching. The results are promising for the development of magnetic-field-free superconducting spintronic devices, in which the S/F interaction is not only sensitive to the magnetization alignment but also to an applied electric field.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"40 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-07-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141739732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optical contrast analysis of α-RuCl3 nanoflakes on oxidized silicon wafers 氧化硅晶片上的α-RuCl3 纳米片的光学对比分析

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-07-17 DOI: 10.1063/5.0212132

Tatyana V. Ivanova, Daniel Andres-Penares, Yiping Wang, Jiaqiang Yan, Daniel Forbes, Servet Ozdemir, Kenneth S. Burch, Brian D. Gerardot, Mauro Brotons-Gisbert

{"title":"Optical contrast analysis of α-RuCl3 nanoflakes on oxidized silicon wafers","authors":"Tatyana V. Ivanova, Daniel Andres-Penares, Yiping Wang, Jiaqiang Yan, Daniel Forbes, Servet Ozdemir, Kenneth S. Burch, Brian D. Gerardot, Mauro Brotons-Gisbert","doi":"10.1063/5.0212132","DOIUrl":"https://doi.org/10.1063/5.0212132","url":null,"abstract":"α-RuCl3, a narrow-band Mott insulator with a large work function, offers intriguing potential as a quantum material or as a charge acceptor for electrical contacts in van der Waals devices. In this work, we perform a systematic study of the optical reflection contrast of α-RuCl3 nanoflakes on oxidized silicon wafers and estimate the accuracy of this imaging technique to assess the crystal thickness. Via spectroscopic micro-ellipsometry measurements, we characterize the wavelength-dependent complex refractive index of α-RuCl3 nanoflakes of varying thickness in the visible and near-infrared. Building on these results, we simulate the optical contrast of α-RuCl3 nanoflakes with thicknesses below 100 nm on SiO2/Si substrates under different illumination conditions. We compare the simulated optical contrast with experimental values extracted from optical microscopy images and obtain good agreement. Finally, we show that optical contrast imaging allows us to retrieve the thickness of the RuCl3 nanoflakes exfoliated on an oxidized silicon substrate with a mean deviation of −0.2 nm for thicknesses below 100 nm with a standard deviation of only 1 nm. Our results demonstrate that optical contrast can be used as a non-invasive, fast, and reliable technique to estimate the α-RuCl3 thickness.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"82 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-07-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141739795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Magnetic and magneto-transport properties of non-collinear antiferromagnetic Mn3Ge epitaxial films 非共轭反铁磁性 Mn3Ge 外延薄膜的磁性和磁传输特性

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-07-12 DOI: 10.1063/5.0217710

Yutaro Takeuchi, Hossein Sepehri-Amin, Satoshi Sugimoto, Takanobu Hiroto, Shinya Kasai

引用次数: 0

Structural and magnetic properties of molecular beam epitaxy (MnSb2Te4)x(Sb2Te3)1−x topological materials with exceedingly high Curie temperature 具有超高居里温度的分子束外延 (MnSb2Te4)x(Sb2Te3)1-x 拓扑材料的结构和磁学特性

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-07-12 DOI: 10.1063/5.0195940

Candice R. Forrester, Christophe Testelin, Kaushini Wickramasinghe, Ido Levy, Dominique Demaille, David Hrabovsky, Xiaxin Ding, Lia Krusin-Elbaum, Gustavo E. Lopez, Maria C. Tamargo

{"title":"Structural and magnetic properties of molecular beam epitaxy (MnSb2Te4)x(Sb2Te3)1−x topological materials with exceedingly high Curie temperature","authors":"Candice R. Forrester, Christophe Testelin, Kaushini Wickramasinghe, Ido Levy, Dominique Demaille, David Hrabovsky, Xiaxin Ding, Lia Krusin-Elbaum, Gustavo E. Lopez, Maria C. Tamargo","doi":"10.1063/5.0195940","DOIUrl":"https://doi.org/10.1063/5.0195940","url":null,"abstract":"Tuning the properties of magnetic topological materials is of interest to realize exotic physical phenomena, new quantum phases and quasiparticles, and topological spintronic devices. However, current topological materials exhibit Curie temperature (TC) values far below those needed for practical applications. In recent years, significant progress has been made to control and optimize TC, particularly through defect-engineering of these structures. Most recently, we reported TC values up to 80 K for (MnSb2Te4)x(Sb2Te3)1−x when 0.7 ≤ x ≤ 0.85 by controlling the composition x and the Mn content in these structures during molecular beam epitaxy growth. In this study, we show further enhancement of the TC, as high as 100 K, by maintaining high Mn content and reducing the growth rate from 0.9 nm/min to 0.5 nm/min. Derivative curves of the Hall resistance and the magnetization reveal the presence of two TC components contributing to the overall value and suggest TC1 and TC2 have distinct origins: excess Mn in MnSb2Te4 septuple layers (SLs) and high Mn content in Sb2−yMnyTe3 quintuple layer (QL) alloys, respectively. To elucidate the mechanisms promoting higher TC values in this system, we show evidence of enhanced structural disorder due to the excess Mn that occupies not only Sb sites but also Te sites, leading to the formation of a new crystal structure for these materials. Learning to control defects that enhance desired magnetic properties and understanding the mechanisms that promote high TC in magnetic topological materials such as (Mn1+ySb2−yTe4)x(Sb2−yMnyTe3)1−x is of great importance to achieve practical quantum devices.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"35 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141613066","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Healing gradient degradation in Nb3Sn SRF cavities using a recoating method 使用重涂法修复 Nb3Sn SRF 型腔中的梯度退化

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-07-10 DOI: 10.1063/5.0218739

Eric Viklund, David N. Seidman, Sam Posen, Brad M. Tennis, Grigory Eremeev

引用次数: 0

Assignments of vibrational lines to OD-impurity complexes for adventitious impurities in β-Ga2O3 β-Ga2O3中偶发杂质的OD-杂质复合物振动线赋值

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-07-10 DOI: 10.1063/5.0219979

Andrew Venzie, Michael Stavola, W. Beall Fowler, Evan R. Glaser, Marko J. Tadjer, Jason I. Forbus, Mary Ellen Zvanut, Stephen J. Pearton

{"title":"Assignments of vibrational lines to OD-impurity complexes for adventitious impurities in β-Ga2O3","authors":"Andrew Venzie, Michael Stavola, W. Beall Fowler, Evan R. Glaser, Marko J. Tadjer, Jason I. Forbus, Mary Ellen Zvanut, Stephen J. Pearton","doi":"10.1063/5.0219979","DOIUrl":"https://doi.org/10.1063/5.0219979","url":null,"abstract":"Hydrogen in β-Ga2O3 passivates shallow impurities and deep-level defects and can have a strong effect on conductivity. More than a dozen O–D vibrational lines have been reported for β-Ga2O3 treated with the heavy isotope of hydrogen, deuterium. To explain the large number of O–D centers that have been observed, the involvement of additional nearby defects and impurities has been proposed. A few O–H centers have been associated with specific impurities that were introduced intentionally during crystal growth. However, definitive assignments of O–H and O–D vibrational lines associated with important adventitious impurities, such as Si and Fe, have been difficult. A set of well-characterized Si-doped β-Ga2O3 epitaxial layers with different layer thicknesses has been deuterated and investigated by vibrational spectroscopy to provide new evidence for the assignment of a line at 2577 cm−1 to an OD–Si complex. The vibrational properties of several of the reported OD-impurity complexes are consistent with the existence of a family of defects with a VGa1ic−D center at their core that is perturbed by a nearby impurity.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"26 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141588333","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Photo-induced collective charge-density-wave dynamics in bulk 1T-VSe2 块体 1T-VSe2 中光诱导的集体电荷密度波动力学

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-07-10 DOI: 10.1063/5.0204205

P. Sutar, D. Grabnar, D. Vengust, D. Svetin, E. Goreshnik, D. Mihailovic, T. Mertelj

引用次数: 0