金属有机化学气相沉积法生长的 AlYN/GaN 异质结构中的二维电子气体

IF 5.3 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
APL Materials Pub Date : 2024-05-07 DOI:10.1063/5.0203156
Isabel Streicher, Patrik Straňák, Lutz Kirste, Mario Prescher, Stefan Müller, Stefano Leone
{"title":"金属有机化学气相沉积法生长的 AlYN/GaN 异质结构中的二维电子气体","authors":"Isabel Streicher, Patrik Straňák, Lutz Kirste, Mario Prescher, Stefan Müller, Stefano Leone","doi":"10.1063/5.0203156","DOIUrl":null,"url":null,"abstract":"Wurtzite AlN alloyed with group 3 elements Sc and Y boosts the performance of GaN-based high-electron-mobility transistors (HEMTs) significantly as they increase the spontaneous polarization of the barrier layer and, thus, enhance the charge carrier density ns in the two-dimensional electron gas (2DEG) formed at the interface with the GaN channel. The emerging nitride Al1−xYxN additionally features an a lattice parameter matching to that of GaN at x = 0.07–0.11, allowing for the growth of strain-free barriers. Here, we demonstrate the growth of Al1−xYxN/GaN heterostructures for HEMTs by metal–organic chemical vapor deposition for the first time. The effect of the Y concentrations on the 2DEG is investigated in a Y concentration range from 3% to 15%. At 8% Y, a record mobility of 3200 cm2/(Vs) was measured at a low temperature (7 K). Room and low-temperature ns was at 1–2 × 1013 cm−2. Al0.92Y0.08N barriers were coherently strained to the GaN channel for barrier thicknesses from 5 to 15 nm. Finally, the deposition of Al1−xYxN/GaN heterostructures deposited on 4″ 4H–SiC wafers had a room-temperature mobility close to 1400 cm2/(Vs). AlYN/GaN heterostructures may offer advantages over AlScN/GaN heterostructures not only for the lower price and higher abundance of the raw material but also in terms of electrical characteristics and may be more suitable for power amplifying applications due to increased electron mobility.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":null,"pages":null},"PeriodicalIF":5.3000,"publicationDate":"2024-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Two-dimensional electron gases in AlYN/GaN heterostructures grown by metal–organic chemical vapor deposition\",\"authors\":\"Isabel Streicher, Patrik Straňák, Lutz Kirste, Mario Prescher, Stefan Müller, Stefano Leone\",\"doi\":\"10.1063/5.0203156\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Wurtzite AlN alloyed with group 3 elements Sc and Y boosts the performance of GaN-based high-electron-mobility transistors (HEMTs) significantly as they increase the spontaneous polarization of the barrier layer and, thus, enhance the charge carrier density ns in the two-dimensional electron gas (2DEG) formed at the interface with the GaN channel. The emerging nitride Al1−xYxN additionally features an a lattice parameter matching to that of GaN at x = 0.07–0.11, allowing for the growth of strain-free barriers. Here, we demonstrate the growth of Al1−xYxN/GaN heterostructures for HEMTs by metal–organic chemical vapor deposition for the first time. The effect of the Y concentrations on the 2DEG is investigated in a Y concentration range from 3% to 15%. At 8% Y, a record mobility of 3200 cm2/(Vs) was measured at a low temperature (7 K). Room and low-temperature ns was at 1–2 × 1013 cm−2. Al0.92Y0.08N barriers were coherently strained to the GaN channel for barrier thicknesses from 5 to 15 nm. Finally, the deposition of Al1−xYxN/GaN heterostructures deposited on 4″ 4H–SiC wafers had a room-temperature mobility close to 1400 cm2/(Vs). AlYN/GaN heterostructures may offer advantages over AlScN/GaN heterostructures not only for the lower price and higher abundance of the raw material but also in terms of electrical characteristics and may be more suitable for power amplifying applications due to increased electron mobility.\",\"PeriodicalId\":7985,\"journal\":{\"name\":\"APL Materials\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":5.3000,\"publicationDate\":\"2024-05-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"APL Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1063/5.0203156\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"APL Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1063/5.0203156","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

摘要

与第 3 族元素 Sc 和 Y 合金的晶格氮化铝能显著提高基于氮化镓的高电子迁移率晶体管 (HEMT) 的性能,因为它们增加了势垒层的自发极化,从而提高了在与氮化镓沟道的界面上形成的二维电子气体 (2DEG) 中的电荷载流子密度 ns。此外,新出现的氮化物 Al1-xYxN 在 x = 0.07-0.11 时具有与氮化镓相匹配的晶格参数,从而实现了无应变势垒的生长。在此,我们首次展示了通过金属有机化学气相沉积法生长的用于 HEMT 的 Al1-xYxN/GaN 异质结构。在 3% 到 15% 的 Y 浓度范围内,我们研究了 Y 浓度对二维电子元件的影响。Y 浓度为 8%时,在低温(7 K)下测得的迁移率为 3200 cm2/(Vs)。室温和低温 ns 为 1-2 × 1013 cm-2。Al0.92Y0.08N 势垒与 GaN 沟道相干,势垒厚度从 5 纳米到 15 纳米不等。最后,沉积在 4 英寸 4H-SiC 硅片上的 Al1-xYxN/GaN 异质结构的室温迁移率接近 1400 cm2/(Vs)。与 AlScN/GaN 异质结构相比,AlYN/GaN 异质结构不仅价格低廉、原材料丰富,而且在电气特性方面也具有优势,并且由于电子迁移率的提高,可能更适合功率放大应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Two-dimensional electron gases in AlYN/GaN heterostructures grown by metal–organic chemical vapor deposition
Wurtzite AlN alloyed with group 3 elements Sc and Y boosts the performance of GaN-based high-electron-mobility transistors (HEMTs) significantly as they increase the spontaneous polarization of the barrier layer and, thus, enhance the charge carrier density ns in the two-dimensional electron gas (2DEG) formed at the interface with the GaN channel. The emerging nitride Al1−xYxN additionally features an a lattice parameter matching to that of GaN at x = 0.07–0.11, allowing for the growth of strain-free barriers. Here, we demonstrate the growth of Al1−xYxN/GaN heterostructures for HEMTs by metal–organic chemical vapor deposition for the first time. The effect of the Y concentrations on the 2DEG is investigated in a Y concentration range from 3% to 15%. At 8% Y, a record mobility of 3200 cm2/(Vs) was measured at a low temperature (7 K). Room and low-temperature ns was at 1–2 × 1013 cm−2. Al0.92Y0.08N barriers were coherently strained to the GaN channel for barrier thicknesses from 5 to 15 nm. Finally, the deposition of Al1−xYxN/GaN heterostructures deposited on 4″ 4H–SiC wafers had a room-temperature mobility close to 1400 cm2/(Vs). AlYN/GaN heterostructures may offer advantages over AlScN/GaN heterostructures not only for the lower price and higher abundance of the raw material but also in terms of electrical characteristics and may be more suitable for power amplifying applications due to increased electron mobility.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
APL Materials
APL Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
9.60
自引率
3.30%
发文量
199
审稿时长
2 months
期刊介绍: APL Materials features original, experimental research on significant topical issues within the field of materials science. In order to highlight research at the forefront of materials science, emphasis is given to the quality and timeliness of the work. The journal considers theory or calculation when the work is particularly timely and relevant to applications. In addition to regular articles, the journal also publishes Special Topics, which report on cutting-edge areas in materials science, such as Perovskite Solar Cells, 2D Materials, and Beyond Lithium Ion Batteries.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信