Isabel Streicher, Patrik Straňák, Lutz Kirste, Mario Prescher, Stefan Müller, Stefano Leone
{"title":"金属有机化学气相沉积法生长的 AlYN/GaN 异质结构中的二维电子气体","authors":"Isabel Streicher, Patrik Straňák, Lutz Kirste, Mario Prescher, Stefan Müller, Stefano Leone","doi":"10.1063/5.0203156","DOIUrl":null,"url":null,"abstract":"Wurtzite AlN alloyed with group 3 elements Sc and Y boosts the performance of GaN-based high-electron-mobility transistors (HEMTs) significantly as they increase the spontaneous polarization of the barrier layer and, thus, enhance the charge carrier density ns in the two-dimensional electron gas (2DEG) formed at the interface with the GaN channel. The emerging nitride Al1−xYxN additionally features an a lattice parameter matching to that of GaN at x = 0.07–0.11, allowing for the growth of strain-free barriers. Here, we demonstrate the growth of Al1−xYxN/GaN heterostructures for HEMTs by metal–organic chemical vapor deposition for the first time. The effect of the Y concentrations on the 2DEG is investigated in a Y concentration range from 3% to 15%. At 8% Y, a record mobility of 3200 cm2/(Vs) was measured at a low temperature (7 K). Room and low-temperature ns was at 1–2 × 1013 cm−2. Al0.92Y0.08N barriers were coherently strained to the GaN channel for barrier thicknesses from 5 to 15 nm. Finally, the deposition of Al1−xYxN/GaN heterostructures deposited on 4″ 4H–SiC wafers had a room-temperature mobility close to 1400 cm2/(Vs). AlYN/GaN heterostructures may offer advantages over AlScN/GaN heterostructures not only for the lower price and higher abundance of the raw material but also in terms of electrical characteristics and may be more suitable for power amplifying applications due to increased electron mobility.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":null,"pages":null},"PeriodicalIF":5.3000,"publicationDate":"2024-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Two-dimensional electron gases in AlYN/GaN heterostructures grown by metal–organic chemical vapor deposition\",\"authors\":\"Isabel Streicher, Patrik Straňák, Lutz Kirste, Mario Prescher, Stefan Müller, Stefano Leone\",\"doi\":\"10.1063/5.0203156\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Wurtzite AlN alloyed with group 3 elements Sc and Y boosts the performance of GaN-based high-electron-mobility transistors (HEMTs) significantly as they increase the spontaneous polarization of the barrier layer and, thus, enhance the charge carrier density ns in the two-dimensional electron gas (2DEG) formed at the interface with the GaN channel. The emerging nitride Al1−xYxN additionally features an a lattice parameter matching to that of GaN at x = 0.07–0.11, allowing for the growth of strain-free barriers. Here, we demonstrate the growth of Al1−xYxN/GaN heterostructures for HEMTs by metal–organic chemical vapor deposition for the first time. The effect of the Y concentrations on the 2DEG is investigated in a Y concentration range from 3% to 15%. At 8% Y, a record mobility of 3200 cm2/(Vs) was measured at a low temperature (7 K). Room and low-temperature ns was at 1–2 × 1013 cm−2. Al0.92Y0.08N barriers were coherently strained to the GaN channel for barrier thicknesses from 5 to 15 nm. Finally, the deposition of Al1−xYxN/GaN heterostructures deposited on 4″ 4H–SiC wafers had a room-temperature mobility close to 1400 cm2/(Vs). AlYN/GaN heterostructures may offer advantages over AlScN/GaN heterostructures not only for the lower price and higher abundance of the raw material but also in terms of electrical characteristics and may be more suitable for power amplifying applications due to increased electron mobility.\",\"PeriodicalId\":7985,\"journal\":{\"name\":\"APL Materials\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":5.3000,\"publicationDate\":\"2024-05-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"APL Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1063/5.0203156\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"APL Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1063/5.0203156","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Two-dimensional electron gases in AlYN/GaN heterostructures grown by metal–organic chemical vapor deposition
Wurtzite AlN alloyed with group 3 elements Sc and Y boosts the performance of GaN-based high-electron-mobility transistors (HEMTs) significantly as they increase the spontaneous polarization of the barrier layer and, thus, enhance the charge carrier density ns in the two-dimensional electron gas (2DEG) formed at the interface with the GaN channel. The emerging nitride Al1−xYxN additionally features an a lattice parameter matching to that of GaN at x = 0.07–0.11, allowing for the growth of strain-free barriers. Here, we demonstrate the growth of Al1−xYxN/GaN heterostructures for HEMTs by metal–organic chemical vapor deposition for the first time. The effect of the Y concentrations on the 2DEG is investigated in a Y concentration range from 3% to 15%. At 8% Y, a record mobility of 3200 cm2/(Vs) was measured at a low temperature (7 K). Room and low-temperature ns was at 1–2 × 1013 cm−2. Al0.92Y0.08N barriers were coherently strained to the GaN channel for barrier thicknesses from 5 to 15 nm. Finally, the deposition of Al1−xYxN/GaN heterostructures deposited on 4″ 4H–SiC wafers had a room-temperature mobility close to 1400 cm2/(Vs). AlYN/GaN heterostructures may offer advantages over AlScN/GaN heterostructures not only for the lower price and higher abundance of the raw material but also in terms of electrical characteristics and may be more suitable for power amplifying applications due to increased electron mobility.
期刊介绍:
APL Materials features original, experimental research on significant topical issues within the field of materials science. In order to highlight research at the forefront of materials science, emphasis is given to the quality and timeliness of the work. The journal considers theory or calculation when the work is particularly timely and relevant to applications.
In addition to regular articles, the journal also publishes Special Topics, which report on cutting-edge areas in materials science, such as Perovskite Solar Cells, 2D Materials, and Beyond Lithium Ion Batteries.