The European Physical Journal B最新文献

{"title":"Charge accumulation and potential difference generation in ion adsorbing cells","authors":"Giovanni Barbero,&nbsp;Luiz R. Evangelista,&nbsp;Ervin K. Lenzi,&nbsp;Antonio M. Scarfone","doi":"10.1140/epjb/s10051-024-00775-4","DOIUrl":"10.1140/epjb/s10051-024-00775-4","url":null,"abstract":"<p>We analyze charge and field equilibrium distributions in an insulating medium with ions confined by two flat adsorbing–desorbing electrodes without an external electric field. The equilibrium charge density profile of the sample is determined by considering the accumulation of mobile charges at the surface, which generates a surface electric potential. Charging dynamics are explored using a kinetic balance equation, resulting in a time-dependent net charge surface and an inhomogeneous Volterra integral equation of the second kind, and determining the surface electric potential in the half-space approximation. The results show a non-monotonic time dependence for the surface electric potential due to adsorption–desorption processes. The analysis is extended to a finite sample and reveals the presence of a maximum in the time behavior of difference of potential when only one type of ion is selectively adsorbed. The trend is instead monotonic when one electrode only adsorbs positive, and the other one adsorbs only negative ions. This approach may be used as a convenient theoretical tool for further investigation of charge accumulation on the surfaces of electrolytic cells.</p>","PeriodicalId":787,"journal":{"name":"The European Physical Journal B","volume":"97 9","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142248080","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Orbital antiferromagnetic currents in a frustrated fermionic ladder","authors":"Shota Garuchava,&nbsp;G. I. Japaridze,&nbsp;A. A. Nersesyan","doi":"10.1140/epjb/s10051-024-00777-2","DOIUrl":"10.1140/epjb/s10051-024-00777-2","url":null,"abstract":"<p>We consider a spinless <i>t</i>-<span>(t')</span> ionic Hubbard chain at 1/2 filling and large hopping ratio <span>(t'/t)</span>. In this limit, the model adequately maps onto a weakly coupled triangular ladder with a potential interchain bias. The low-energy properties of the system are formed due to the interplay of geometrical frustration, correlations and charge imbalance. We derive the effective field-theoretical model to study universal properties of the model in the scaling limit. We show that at full dynamical frustration, the ground state of the ladder represents a repulsive version of the Luther–Emery liquid with dominant orbital antiferromagnetic correlations exhibiting the slowest power law decay in the ground state. Pairing correlations also display algebraic order but are subdominant. At an incomplete dynamical frustration, a finite commensurability gap is dynamically generated, and the fluctuating OAF transforms to a long-range ordered state with a spontaneously broken time-reversal symmetry. The mass gap in the spectrum of relative density fluctuations gets suppressed upon increasing the potential bias.</p>","PeriodicalId":787,"journal":{"name":"The European Physical Journal B","volume":"97 9","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142248045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Stimulus-dependent spiking and bursting behavior in memsensor circuits: experiment and wave digital modeling","authors":"Sebastian Jenderny,&nbsp;Rohit Gupta,&nbsp;Roshani Madurawala,&nbsp;Thomas Strunskus,&nbsp;Franz Faupel,&nbsp;Sören Kaps,&nbsp;Rainer Adelung,&nbsp;Karlheinz Ochs,&nbsp;Alexander Vahl","doi":"10.1140/epjb/s10051-024-00770-9","DOIUrl":"10.1140/epjb/s10051-024-00770-9","url":null,"abstract":"<p>Biological information processing pathways in neuron assemblies rely on spike activity, encoding information in the time domain, and operating the highly parallel network at an outstanding robustness and efficiency. One particularly important aspect is the distributed, local pre-processing effectively converting stimulus-induced signals to action potentials, temporally encoding analog information. The field of brain-inspired electronics strives to adapt concepts of information processing in neural networks, e.g., stimulus detection and processing being intertwined. As such, stimulus-modulated resistive switching in memristive devices attracts an increasing attention. This work reports on a three-component memsensor circuit, featuring a UV-sensor, a memristive device with diffusive switching characteristics and a capacitor. Upon application of a DC bias, complex, stimulus-dependent spiking and brain-inspired bursting can be observed, as experimentally showcased using combination of a microstructured, tetrapodal ZnO sensor and a Au/SiO_xN_y/Ag cross-point memristive device. The experimental findings are corroborated by a wave digital model, which successfully replicates both types of behavior and outlines the relation of temporal variation of switching thresholds to the occurrence of bursting activity.</p>","PeriodicalId":787,"journal":{"name":"The European Physical Journal B","volume":"97 9","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1140/epjb/s10051-024-00770-9.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142248043","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Analysis of socioeconomic indicators in the United States, Brazil, and other Latin American countries using econophysics techniques","authors":"Leonardo C. Rossato,&nbsp;José Roberto Iglesias,&nbsp;Sebastian Gonçalves","doi":"10.1140/epjb/s10051-024-00766-5","DOIUrl":"10.1140/epjb/s10051-024-00766-5","url":null,"abstract":"<p>In addressing the complexity inherent in comparing socioeconomic indicators across diverse countries, a substantial barrier arises from the wide array of distinct calculation approaches. Consequently, a highly pertinent question emerges: how does one compare values when the underlying calculation methodologies are diverse? In this context, we propose a multidisciplinary and heterogeneous approach, employing numerical and visual comparisons to analyze socioeconomic indicators of municipalities in the US, Brazil and other Latin American countries. We identify independent-scale patterns in three stages: initially, by compiling a database sourced from respected institutions in each country and identifying correlations within this dataset; next, by creating graphical representations using a binning methodology for scatter plots of the identified patterns; finally, by transforming the dispersions from the initial stage into graphs using a variant of the Gravitational Clustering Algorithm technique from astrophysics. We find significant relationships, specifically in the logarithmic relationship between Municipal HDI and population size. In some countries, global minima were identified, suggesting the existence of a critical population density at which municipalities above this threshold exhibit a positive and significant correlation with an increase in their HDI.</p>","PeriodicalId":787,"journal":{"name":"The European Physical Journal B","volume":"97 9","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142211421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Spin photo-currents in antiferromagnets with Dzyaloshinskii–Moriya interactions","authors":"Yonghong Yan,&nbsp;Hui Zhao","doi":"10.1140/epjb/s10051-024-00772-7","DOIUrl":"10.1140/epjb/s10051-024-00772-7","url":null,"abstract":"<p>We theoretically investigate spin photo-currents in two types of antiferromagnetic insulators with Dzyaloshinskii–Moriya (DM) interactions: one with staggered DM interactions and the other with uniform DM interactions. The magnon spectrum for each system thus becomes asymmetric with respect to the propagation direction of magnons, which may be utilized to enhance the nonlinear spin conductivity. Indeed, we show that the spin conductivity in each system could be up to the order of 10 nJ/(<span>(textrm{cm}^2cdot textrm{T}^2)</span>) when the system is coupled to an AC magnetic field transverse to the ordered spins. Due to the special magnon dispersion, however, an extra static field is required to achieve a high conductivity in the system with staggered DM interactions. The results could be useful in opto-spintronics based on magnetic excitations.</p>","PeriodicalId":787,"journal":{"name":"The European Physical Journal B","volume":"97 9","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142211418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of spin quantum force on lower and upper hybrid waves’ instability under the influence of an electron beam in a magnetized semiconductor plasma","authors":"Krishna Sharma,&nbsp;Utpal Deka","doi":"10.1140/epjb/s10051-024-00768-3","DOIUrl":"10.1140/epjb/s10051-024-00768-3","url":null,"abstract":"<div><p>The influence of the spin quantum forces along with other quantum parameters, including the Bohmian force, spin quantum force, exchange–correlation potential, and quantum statistical pressure of the quantized degenerate species were considered to examine the excitation of comparatively low frequency electrostatic lower hybrid waves (LHWs) and upper hybrid waves (UHWs) driven by an electron beam in a magnetized semiconductor plasma. The investigation is done using the quantum hydrodynamic framework. The influence of the spin quantum force, electron beam temperature, beam streaming speed, and propagation angle on the growth and phase speed of LHWs and UHWs have been analysed. Each of the parameters affects the instability, the growth rate, and the resonant values. One of the notable outcomes is the effect of temperature on the instability. The resonance value of the maximal growth rate is affected due to the different parameters. The inclusion of the spin quantum force shifts the growth rate in both LHWs and UHWs.</p><h3>Graphical abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":787,"journal":{"name":"The European Physical Journal B","volume":"97 9","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142211422","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Stretched-exponential melting of a dynamically frozen state under imprinted phase noise in the ising chain in a transverse field","authors":"Krishanu Roychowdhury,&nbsp;Arnab Das","doi":"10.1140/epjb/s10051-024-00776-3","DOIUrl":"10.1140/epjb/s10051-024-00776-3","url":null,"abstract":"<p>The concept of dynamical freezing is a phenomenon where a suitable set of local observables freezes under a strong periodic drive in a quantum many-body system. This happens because of the emergence of approximate but perpetual conservation laws when the drive is strong enough. In this work, we probe the resilience of dynamical freezing to random perturbations added to the relative phases between the interfering states (elements of a natural basis) in the time-evolving wave function after each drive cycle. We study this in an integrable Ising chain in a time-periodic transverse field. Our key finding is, that the imprinted phase noise melts the dynamically frozen state, but the decay is “slow”: a stretched-exponential decay rather than an exponential one. Stretched-exponential decays (also known as Kohlrausch relaxation) are usually expected in complex systems with time-scale hierarchies due to strong disorders or other inhomogeneities resulting in jamming, glassiness, or localization. Here we observe this in a simple translationally invariant system dynamically frozen under a periodic drive. Moreover, the melting here does not obliterate the entire memory of the initial state but leaves behind a steady remnant that depends on the initial conditions. This underscores the stability of dynamically frozen states.</p>","PeriodicalId":787,"journal":{"name":"The European Physical Journal B","volume":"97 9","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1140/epjb/s10051-024-00776-3.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142211425","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Sc- and Ti-doped silicon carbide nanotubes for NH3 sensing and storage applications: a DFT approach","authors":"Banchob Wanno,&nbsp;Thanawat Somtua,&nbsp;Anucha Naowanit,&nbsp;Narin Panya,&nbsp;Wandee Rakrai,&nbsp;Chatthai Kaewtong,&nbsp;Chanukorn Tabtimsai","doi":"10.1140/epjb/s10051-024-00763-8","DOIUrl":"10.1140/epjb/s10051-024-00763-8","url":null,"abstract":"<div><p>Ammonia (NH₃) is highly hazardous gases, thus the investigation for a highly sensitive sensor of NH₃ molecule is desirable. The adsorptions of NH₃ molecule on Sc and Ti atoms doped silicon carbide nanotube (SiCNT) were investigated by using density functional theory calculation. The adsorption energies, adsorption distances, energy gaps, chemical hardness and softness, orbital distributions, charge transfers and density of states were examined. The calculated results display that NH₃ molecules can be adsorbed on the pristine SiCNT via a weak physical interaction, which is much weaker than those of NH₃ adsorption on Sc and Ti-doped SiCNTs. All of Sc and Ti-doped SiCNTs can absorb single and multiple NH₃ molecules with the greatest adsorption energy of − 41.56 kcal/mol for NH₃/Ti_Si–SiCNT system. In addition, there are shorter adsorption distance and larger charge transfer for Sc- and Ti-doped SiCNTs than that of pristine SiCNT with NH₃ molecule. The orbital distributions are occurred around the doping site may be due to the strong interaction between NH₃ and SiCNT. The energy gaps of Sc- and Ti-doped SiCNTs have much more significant change than that of pristine SiCNT in which 2NH₃/Ti_C–SiCNT show the largest change of energy gap about 22% compared with bare Ti_C–SiCNT. The density of states of Sc- and Ti-doped SiCNTs show significant shift than that of pristine SiCNT which the new impurity states near the − 2.5 eV is occurred. The chemical hardness and softness illustrate the enhancement stability and decreased the reactivity. A short recovery times and suitable desorption temperatures are observed for the NH₃ desorption on Sc- and Ti-doped SiCNT surface. Therefore, sensitivity to NH₃ molecule of Sc- and Ti-doped SiCNTs is a promising candidate for highly sensitive gas sensing and storage nanomaterials.</p><h3>Graphical abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":787,"journal":{"name":"The European Physical Journal B","volume":"97 9","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142211424","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Influence of barrier discharge plasma on thermophysical, dielectric, conductivity and photoluminescence properties of low-density polyethylene doped with CaGa2S4:Eu2+","authors":"T. D. Ibragimov,&nbsp;O. B. Tagiyev,&nbsp;E. G. Asadov,&nbsp;I. S. Ramazanova","doi":"10.1140/epjb/s10051-024-00774-5","DOIUrl":"10.1140/epjb/s10051-024-00774-5","url":null,"abstract":"<div><p>The effect of barrier discharge plasma on the thermophysical, dielectric, conductivity and photoluminescent properties of CaGa₂S₄:Eu²⁺doped low-density polyethylene have been investigated. It is shown that the enthalpy and entropy of melting and solidification decrease sharply with the inclusion of filler (3 vol%) and then increase with increasing filler concentration. At the same time, these physical quantities increases in all cases after exposure to the gas discharge. This increase is negligible for pure polyethylene, but significant for composites. With increasing filler concentration, the dielectric permittivity increases and agrees well with the Maxwell–Garnett theory. It is shown that the conductivity has a hopping character and mainly increases with increasing filler concentration. Dielectric permittivity increases and conductivity as well as photoluminescence decrease after the action of gas discharge.</p><h3>Graphical abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":787,"journal":{"name":"The European Physical Journal B","volume":"97 9","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142211433","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Peculiarities of TP-e.m.f. caused by the heating of charge carriers by an electric field in a layered semiconductor n-InSe","authors":"T. G. Naghiyev,&nbsp;R. F. Babayeva,&nbsp;A. S. Abiyev","doi":"10.1140/epjb/s10051-024-00771-8","DOIUrl":"10.1140/epjb/s10051-024-00771-8","url":null,"abstract":"<div><p>The effect of the external and intracrystalline factors (temperature, light, and the magnitude of the initial dark resistivity of the sample, electric field, chemical nature, and amount of the impurities) on the main characteristics of layered n-InSe crystals was investigated. The thermophoto-e.m.f. (TP-e.m.f.) was observed due to the heating of free charge carriers by an electric field. It has been established that the obtained experimental results differ significantly from spatially homogeneous semiconductors. This deviation increases with an increase in the value of the initial dark resistivity of the sample (<i>ρ</i>_D0) which depends nonmonotonically on the concentration of the impurity (<i>N</i>_REE). Undoped (with the lowest <i>ρ</i>_D0) and rare-earth-doped (<i>N</i>_REE ≥ 5·10^–2 at.%) samples were studied under all conditions, as well as at high <i>T</i>₀ and <i>I</i>₀, and it was determined that the TP-e.m.f. characteristics of hot current carriers (HCC) are the most stable and reproducible. The obtained results satisfactorily correlate with the provisions of the theory of TP-e.m.f. of HCC in spatially homogeneous semiconductors. The dependence of the characteristics of TP-e.m.f. of HCC from <i>ρ</i>_D0 and <i>N</i>_REE clearly explains the deviations compared to spatially homogeneous semiconductors considering the presence of random macroscopic defects in the samples.</p><h3>Graphical abstract</h3>\u0000<div><figure><div><div><picture><img></picture></div></div></figure></div></div>","PeriodicalId":787,"journal":{"name":"The European Physical Journal B","volume":"97 9","pages":""},"PeriodicalIF":1.6,"publicationDate":"2024-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142227917","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}