Advanced Theory and Simulations最新文献_第7页

Molecular Design of Pyromellitic Diimides for Triplet‐Driven Photocatalysis: Computational Insights 三态驱动光催化的焦二酰二亚胺分子设计：计算见解

IF 3.3 4区工程技术

Advanced Theory and Simulations Pub Date : 2026-08-20 DOI: 10.1002/adts.70518

Akshara Anakkayath, Anita Halder, Mahesh Kumar Ravva

{"title":"Molecular Design of Pyromellitic Diimides for Triplet‐Driven Photocatalysis: Computational Insights","authors":"Akshara Anakkayath, Anita Halder, Mahesh Kumar Ravva","doi":"10.1002/adts.70518","DOIUrl":"https://doi.org/10.1002/adts.70518","url":null,"abstract":"Organic photocatalysts (OPCs) offer highly promising, metal‐free alternatives to conventional photocatalysts, enabling organic transformations under mild conditions. Achieving balanced oxidation and reduction capabilities in the triplet excited state remains a formidable challenge, as strengthening one often compromises the other. Herein, we present the rational design and comprehensive computational characterization of a series of pyromellitic diimide (PmDI)‐ and its angled isomer, mellophanic diimide (MDI)‐based donor‐acceptor OPCs. Employing DFT and TD‐DFT at the PBE0/6‐31+G** level in dichloromethane, we systematically evaluated geometrical, electronic, excited‐state properties, ground‐state and excited‐state redox potentials across various PmDI units modified with ten diverse donor substituents at core and terminal positions. This approach elucidates how donor strength and substitution regiochemistry finely tune photophysical and redox properties. Remarkably, most designed OPCs exhibit well‐balanced triplet‐state redox potentials, rendering them versatile for diverse photoredox reactions. Select derivatives display exceptionally strong and balanced excited‐state potentials‐reaching down to −2.10 V and up to +2.51 V (vs SCE) in the triplet state. These properties position the PmDI‐based OPCs as a potential candidate for demanding triplet‐state‐driven photocatalysis. This study establishes robust structure‐property guidelines for engineering next‐generation metal‐free photocatalysts with precisely tunable redox behaviour.","PeriodicalId":7219,"journal":{"name":"Advanced Theory and Simulations","volume":"5 1","pages":""},"PeriodicalIF":3.3,"publicationDate":"2026-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148768382","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Engineering Quantum Functionality: A First‐Principles Insight of the Zr 6 NiX 2 (X = Bi, Sb, Te) System for Integrated Superconducting, Plasmonic, and Thermoelectric Applications 工程量子功能：用于集成超导、等离子体和热电应用的Zr 6 NiX 2 （X = Bi, Sb, Te）系统的第一性原理

IF 3.3 4区工程技术

Advanced Theory and Simulations Pub Date : 2026-08-20 DOI: 10.1002/adts.70520

Mohammed A. Jowhari, Sana Ullah Asif, Raed H. Althomali, Muhammad Tauqeer, Hussein Alrobei, Saja A. Althobaiti

{"title":"Engineering Quantum Functionality: A First‐Principles Insight of the Zr 6 NiX 2 (X = Bi, Sb, Te) System for Integrated Superconducting, Plasmonic, and Thermoelectric Applications","authors":"Mohammed A. Jowhari, Sana Ullah Asif, Raed H. Althomali, Muhammad Tauqeer, Hussein Alrobei, Saja A. Althobaiti","doi":"10.1002/adts.70520","DOIUrl":"https://doi.org/10.1002/adts.70520","url":null,"abstract":"The integration of superconducting, plasmonic and thermoelectric functionalities within a single material platform is important for next‐generation quantum and energy technologies. However, the role of p‐block compositional tuning in connecting these phenomena remains insufficiently understood. This study presents a first‐principles density functional theory investigation of the hexagonal Zr 6 Ni(Bi/Sb/Te) 2 intermetallic series, with emphasis on the electron loading effect. Structural optimization confirms strong stability and systematic lattice modulation across the replacement series. Electronic structure results show metallic behavior in all compounds, with Zr 4d and Ni 3d states dominating near the Fermi level. Te substitution shifts the Fermi level toward a higher density of states region, enhancing superconductivity related parameters such as the Sommerfeld coefficient and Pauli paramagnetic susceptibility. Fermi surface analysis further reveals complex multiband topology and substitution dependent pocket restructuring. Optical results indicate strong anisotropic plasmonic behavior, with Zr 6 NiTe 2 showing a blue‐shifted plasma resonance in the deep ultraviolet region. Transport calculations show that Zr 6 NiBi 2 and Zr 6 NiSb 2 provide superior thermoelectric performance, with figure of merit values approaching 0.64. These findings identify p‐block substitution as an effective route for tuning quantum and energy‐related functionalities.","PeriodicalId":7219,"journal":{"name":"Advanced Theory and Simulations","volume":"6 1","pages":""},"PeriodicalIF":3.3,"publicationDate":"2026-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148768811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design and Optimization of High‐Efficiency Se 1‐ x Te x Thin‐Film Solar Cells via Interface and Back‐Contact Engineering 基于界面和后接触工程的高效Se - x Te - x薄膜太阳能电池设计与优化

IF 3.3 4区工程技术

Advanced Theory and Simulations Pub Date : 2026-08-19 DOI: 10.1002/adts.70527

Saif M. H. Qaid, Muhammed Elgamal, Ibrahim S. Ahmed, Mohamed Okil, Majed H. Al‐harbi, Ahmed Shaker, Abdullah S. Aldwayyan

{"title":"Design and Optimization of High‐Efficiency Se 1‐ x Te x Thin‐Film Solar Cells via Interface and Back‐Contact Engineering","authors":"Saif M. H. Qaid, Muhammed Elgamal, Ibrahim S. Ahmed, Mohamed Okil, Majed H. Al‐harbi, Ahmed Shaker, Abdullah S. Aldwayyan","doi":"10.1002/adts.70527","DOIUrl":"https://doi.org/10.1002/adts.70527","url":null,"abstract":"Selenium‐tellurium (Se 1‐ x Te x ) alloys offer promising potential for thin‐film photovoltaics owing to their tunable bandgap, low cost, and environmental sustainability. By tuning the Se:Te ratio, the bandgap of Se 1‐ x Te x alloys can be adjusted to an optimal value (≈1.35 eV) which is crucial for approaching the maximum efficiency of a single‐junction solar cell. Which enhances solar absorption and increases power conversion efficiency (PCE). In this simulation‐based work, we provide a comprehensive study to design Se 1‐ x Te x ‐based TFSCs using SCAPS‐1D simulations. The optimization process involves key factors such as absorber layer thickness, defect densities, electron and hole transportation layers (ETLs and HTLs), and back contact work functions. The results indicate that Se 0.75 Te 0.25 solar cells achieve a significant improvement in PCE with optimized device architecture. Specifically, cells incorporating MoO x as an HTL demonstrate a PCE of 21.94%. Interestingly, the HTL‐free cells, optimized for back contact work function, accomplished a comparable PCE of 21.59%, highlighting the feasibility of eliminating the HTL layer without compromising efficiency. To validate our approach, a global optimization of the HTL‐free structure was performed using a single‐objective genetic algorithm. The findings suggest that optimizing back contact material, defect density, and absorber thickness can lead to high‐efficiency Se 0.75 Te 0.25 ‐based TFSCs for terrestrial applications.","PeriodicalId":7219,"journal":{"name":"Advanced Theory and Simulations","volume":"6 1","pages":""},"PeriodicalIF":3.3,"publicationDate":"2026-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148768443","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Numerical Investigation on a Tunable Ultra‐Broadband GSST‐Based Perfect Metamaterial Absorber for Terahertz Applications 一种用于太赫兹应用的可调谐超宽带GSST完美超材料吸收器的数值研究

IF 3.3 4区工程技术

Advanced Theory and Simulations Pub Date : 2026-08-18 DOI: 10.1002/adts.70522

Nur Mohammad, Md. Saffat Gohor, Jaker Hossain

{"title":"Numerical Investigation on a Tunable Ultra‐Broadband GSST‐Based Perfect Metamaterial Absorber for Terahertz Applications","authors":"Nur Mohammad, Md. Saffat Gohor, Jaker Hossain","doi":"10.1002/adts.70522","DOIUrl":"https://doi.org/10.1002/adts.70522","url":null,"abstract":"An actively tunable novel ultra‐broadband terahertz metamaterial perfect absorber (MMPA) based on a phase‐change material (PCM) Ge 2 Sb 2 Se 1 Te 4 (GSST) is numerically investigated. The design comprises a multilayer structure consisting of four identical rectangular patches with two peanut‐shaped auxetic patterns of GSST as the resonator, a gold ground plane and a dielectric spacer of Li 2 GeO 3 (LGO). Simulation results exhibit a significant bandwidth of 8.64 THz spanning from 3.704 to 12.344 THz with a relative absorption bandwidth (RAB) of 107.68%, simultaneously maintaining absorption above 90% under normal incidence throughout the operating range. The absorption can be systematically tuned from 2% to 100% by varying the conductivity of GSST, substantiating various dynamic functionalities. Wave‐interference and impedance matching theories are analyzed to clarify the physical mechanism of the absorber. Systematic enhancement of the design and parameters are evaluated. Additionally, polarization sensitivity, incident angle effect in transverse electric (TE) and transverse magnetic (TM) modes and field distributions are investigated, which validate its stable operation for different polarization and incident angles. The ultra‐broadband absorption, tunable reconfigurable characteristics, and stable absorption up to a 45° of polarization angle make the proposed structure applicable to next generation devices such as sensors, optoelectronic switches, imaging, modulators, and cloaking.","PeriodicalId":7219,"journal":{"name":"Advanced Theory and Simulations","volume":"1 1","pages":""},"PeriodicalIF":3.3,"publicationDate":"2026-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148754437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Alkali‐Metal Substitution in MCu 3 SiSe 4 (M ═ K, Rb): A First‐Principles Study of Electronic Structure, Bonding, Thermoelectric, and Optical Properties MCu 3 SiSe 4 （M = K, Rb）中的碱金属取代：电子结构、键合、热电和光学性质的第一性原理研究

IF 3.3 4区工程技术

Advanced Theory and Simulations Pub Date : 2026-08-18 DOI: 10.1002/adts.70515

Khamael M. Abualnaja, Safia Abdullah R Alharbi, Kiran Batool

{"title":"Alkali‐Metal Substitution in MCu 3 SiSe 4 (M ═ K, Rb): A First‐Principles Study of Electronic Structure, Bonding, Thermoelectric, and Optical Properties","authors":"Khamael M. Abualnaja, Safia Abdullah R Alharbi, Kiran Batool","doi":"10.1002/adts.70515","DOIUrl":"https://doi.org/10.1002/adts.70515","url":null,"abstract":"Because of their robust optical activity, tunable electronic structures, and innately low lattice thermal conductivity, quaternary chalcogenides have become valuable semiconductors for novel technologies. Alkali‐metal‐based quaternary selenides MCu 3 SiSe 4 (M ═ K, Rb) are thoroughly investigated using density functional theory in this work. Both KCu 3 SiSe 4 and RbCu 3 SiSe 4 are predicted to be mechanically stable cubic semiconductors with moderate incompressibility (B 0 = 46–48 GPa) and noticeable elastic anisotropy, however ductile behavior is confirmed by high Pugh ratios (B/G > 2.7) and positive Cauchy pressures. With valence bands dominated by Cu‐3 d /Se‐4 p hybridization and conduction bands mostly sourced from Si‐ s / p and alkali‐metal states, the electronic band structures show direct bandgaps of about 1.65 eV for KCu 3 SiSe 4 and indirect bandgap of 1.70 eV for RbCu 3 SiSe 4 . Multifunctional optoelectronic potential is supported by optical spectra that show high polarizability, moderate refractive indices (2.1–2.2), low visible reflectivity, and substantial UV–vis. interband absorption. Boltzmann transport analysis predicts positive Seebeck coefficients (p‐type character) and competitive thermoelectric performance, with ZT reaching about 0.40 (KCu 3 SiSe 4 ) and 0.39 (RbCu 3 SiSe 4 ) at 800 K. Quasi‐harmonic Debye modeling further demonstrates thermal stability under combined temperature and pressure and strong pressure‐driven lattice stiffening up to 40 GPa.","PeriodicalId":7219,"journal":{"name":"Advanced Theory and Simulations","volume":"1 1","pages":""},"PeriodicalIF":3.3,"publicationDate":"2026-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148754630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Theoretical Investigation of the Structural Stability and Optoelectronic Properties of La 2 HfSe 5 la2hfse 5结构稳定性及光电性能的理论研究

IF 3.3 4区工程技术

Advanced Theory and Simulations Pub Date : 2026-08-18 DOI: 10.1002/adts.70524

Elkana Rugut, Eric Maluta

{"title":"Theoretical Investigation of the Structural Stability and Optoelectronic Properties of La 2 HfSe 5","authors":"Elkana Rugut, Eric Maluta","doi":"10.1002/adts.70524","DOIUrl":"https://doi.org/10.1002/adts.70524","url":null,"abstract":"Rare‐earth transition‐metal chalcogenides remain largely unexplored despite their potential for functional applications. In this work, we present the first comprehensive first‐principles investigation of the structural, mechanical, vibrational, thermodynamic, electronic, and optical properties of orthorhombic . Structural optimization confirms the stability of the Pnma phase characterized by robust Hf–Se polyhedral bonding. The calculated elastic constants satisfy the Born mechanical stability criteria, while the Pugh ratio (1.96) and Poisson's ratio (0.28) indicate ductile behavior with moderate stiffness. Phonon dispersion calculations reveal the absence of imaginary frequencies, confirming dynamical stability, and yield a Debye temperature of 262 K. Electronic structure calculations identify as a direct band gap semiconductor with band gaps of 0.67 eV (GGA) and 1.36 eV (HSE06). The density of states indicates dominant Se‐p states in the valence band and La/Hf‐d states in the conduction band. Optical analysis reveals strong visible‐range absorption with coefficients on the order of 10 and an optical band gap of 1.58 eV. These results establish as a previously unexplored, mechanically stable, and optically active semiconductor, highlighting its potential for optoelectronic and energy‐conversion applications.","PeriodicalId":7219,"journal":{"name":"Advanced Theory and Simulations","volume":"31 1","pages":""},"PeriodicalIF":3.3,"publicationDate":"2026-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148754629","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Determination of Complex Permittivity of Analytes Using Terahertz Metamaterials 用太赫兹超材料测定分析物的复介电常数

IF 3.3 4区工程技术

Advanced Theory and Simulations Pub Date : 2026-08-18 DOI: 10.1002/adts.70519

Ruixiang Zhu, Hwan Sik Kim, Yeong Hwan Ahn, Sang‐Soo Chee, Mira Naftaly, John E. Cunningham, Sae June Park

{"title":"Determination of Complex Permittivity of Analytes Using Terahertz Metamaterials","authors":"Ruixiang Zhu, Hwan Sik Kim, Yeong Hwan Ahn, Sang‐Soo Chee, Mira Naftaly, John E. Cunningham, Sae June Park","doi":"10.1002/adts.70519","DOIUrl":"https://doi.org/10.1002/adts.70519","url":null,"abstract":"We present a comprehensive simulation study demonstrating a novel method to determine the complex permittivity of analytes using the resonant behavior of metamaterials operating in the 0.2–1.5 Terahertz (THz) frequency range. Full‐wave electromagnetic simulations were performed by overlaying analyte layers with ranging from 1 to 12 and from 0 to 0.5 onto the THz metamaterial surface. The results show that the resonant frequency shift gradually saturates at an analyte thickness of approximately 10 µm due to the strongly confined near‐field distribution around the metamaterial gap region. In contrast, the transmission variation remains sensitive to additional analyte thickness beyond 10 µm because of continued propagation‐related absorption within the bulk analyte region. Our analysis reveals that the resonant frequency shift () is predominantly governed by the real part of the permittivity, whereas the transmission variation () is influenced by both the real and imaginary parts of permittivity. Based on these relationships, a two‐dimensional contour map was established to enable the direct and simultaneous extraction of from the obtained resonance responses. This approach provides a simplified and computationally efficient route for quantitative THz characterization of lossy liquid analytes.","PeriodicalId":7219,"journal":{"name":"Advanced Theory and Simulations","volume":"32 1","pages":""},"PeriodicalIF":3.3,"publicationDate":"2026-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148754627","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High Carrier Mobility as a Key Factor for Thermoelectric Performance in Janus PdSSe Monolayer 高载流子迁移率是影响Janus PdSSe单层热电性能的关键因素

IF 3.3 4区工程技术

Advanced Theory and Simulations Pub Date : 2026-08-18 DOI: 10.1002/adts.70521

Dinh The Hung, To Toan Thang, Nguyen Hoang Linh

{"title":"High Carrier Mobility as a Key Factor for Thermoelectric Performance in Janus PdSSe Monolayer","authors":"Dinh The Hung, To Toan Thang, Nguyen Hoang Linh","doi":"10.1002/adts.70521","DOIUrl":"https://doi.org/10.1002/adts.70521","url":null,"abstract":"Janus two‐dimensional materials with intrinsic out‐of‐plane asymmetry provide a promising platform for achieving enhanced thermoelectric performance. Here, the thermoelectric properties of the Janus PdSSe monolayer are investigated using first‐principles calculations combined with semiclassical Boltzmann transport theory. The PdSSe monolayer is confirmed to be energetically, dynamically, and thermally stable, exhibiting no imaginary phonon modes and maintaining robust structural integrity at ambient conditions. It also exhibits nearly isotropic mechanical behavior and good flexibility. Electronic structure calculations reveal an indirect band gap of 0.92 eV (PBE) and 1.43 eV (HSE). Notably, its high electron mobility (>2000 cm 2 V − 1 s − 1 ), together with favorable band‐edge transport characteristics, contributes to enhanced electrical conductivity while maintaining a sizable Seebeck coefficient (≈1450 µV K − 1 ). This balanced transport behavior results in a power factor of 73.5 mW/mK 2 and a maximum ZT value of 0.81 at 900 K, corresponding to a thermoelectric conversion efficiency of 11.78%. These results suggest that mobility‐enhanced carrier transport plays a dominant role in the thermoelectric performance of the Janus PdSSe monolayer, providing useful insight for the design of high‐efficiency Janus thermoelectric materials.","PeriodicalId":7219,"journal":{"name":"Advanced Theory and Simulations","volume":"15 1","pages":""},"PeriodicalIF":3.3,"publicationDate":"2026-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148754626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Nonreciprocal Conversion in Microwave Optomechanical Ring Resonator via Synthetic Magnetisms 微波光机械环形谐振器的非互反转换

IF 3.3 4区工程技术

Advanced Theory and Simulations Pub Date : 2026-08-16 DOI: 10.1002/adts.202501536

Mahdieh Pourjafarabadi, Ali Asghari Nejad, Yaser Abdi

引用次数: 0

Multi‐Segmented Terahertz Metamaterial‐Based Sensor for Biomolecule Detection 基于多段太赫兹超材料的生物分子检测传感器

IF 3.3 4区工程技术

Advanced Theory and Simulations Pub Date : 2026-08-13 DOI: 10.1002/adts.70517

Pratibha Kumari, Ajeet Kumar

{"title":"Multi‐Segmented Terahertz Metamaterial‐Based Sensor for Biomolecule Detection","authors":"Pratibha Kumari, Ajeet Kumar","doi":"10.1002/adts.70517","DOIUrl":"https://doi.org/10.1002/adts.70517","url":null,"abstract":"This paper presents an ultrathin, narrow‐band metamaterial (MTM)‐based refractive index (RI) sensor in the terahertz (THz) domain for precise detection of several biomedical samples. The full‐wave electromagnetic simulation software, CST, is used to simulate and investigate the proposed design. The proposed design integrates Polytetrafluoroethylene (PTFE) between the multi‐segmented gold resonator structure and the ground plane of gold. The simulation findings reveal a single narrow resonance peak with absorptivity of 99.96% at a resonance frequency of 7.346 THz with an analyte layer of RI 1.33 as a basis. By varying the RI of the ambient environment from 1.35 to 1.40, high RI sensitivity of 2000 GHz/RIU, with a high‐quality factor (Q‐ factor) and detection limit (DL) of 349.81 and 0.0067 RIU, respectively, are achieved. It also displays a notable linear response ( R 2 = 0.981). The proposed sensor exhibits a high‐ Q‐factor of 317.65, 318.04 and 332.91 with outstanding sensitivity of 1714.3, 1500, and 1454.5 GHz/RIU, while detecting cancer cells, tuberculosis (TB) bacteria and dengue virus, respectively. These aspects of ultrathin geometry, narrow‐band near‐unity absorption and sustained excellent sensitivity reflect the innovative nature and practicality of the proposed work.","PeriodicalId":7219,"journal":{"name":"Advanced Theory and Simulations","volume":"462 1","pages":""},"PeriodicalIF":3.3,"publicationDate":"2026-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148717575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0