Nano Convergence最新文献

{"title":"Identification of precursor origins of synthetic graphite anodes in lithium-ion batteries using LDI-MS and multivariate analysis","authors":"Inchan Yang,&nbsp;Yungyeong Bae,&nbsp;Jung-Chul An,&nbsp;Taejung Jung,&nbsp;Se Youn Cho,&nbsp;Young-Kwan Kim,&nbsp;Sungho Lee","doi":"10.1186/s40580-026-00551-3","DOIUrl":"10.1186/s40580-026-00551-3","url":null,"abstract":"<div><p>Synthetic graphites have been widely used in industrial applications, including as anodes in lithium-ion batteries. Because they are produced at temperatures above 3000 °C, which generate highly ordered graphitic domains, there is typically no discernible evidence of their precursor materials. In this study, three types of graphite, coal tar based anisotropic graphite, petroleum fluid oil based anisotropic graphite, and coal tar based isotropic graphite, were prepared. Conventional characterization techniques such as X-ray diffraction, Raman spectroscopy, transmission electron microscopy, and even electrochemical performance were unable to distinguish their precursors. Therefore, we introduced laser desorption/ionization time-of-flight mass spectrometry (LDI-MS) combined with multivariate statistical analysis to characterize three graphites prepared from different synthetic precursors as well as two commercial graphites. The resulting LDI-MS spectra were analyzed using principal component, hierarchical cluster, and heatmap analyses, which are widely used in clinical mass spectrometric diagnostics. Notably, LDI-MS coupled with multivariate statistics successfully classified the graphites depending on their precursor materials and processing parameters, such as heat-treatment temperature, whereas conventional analytical tools failed to reveal these differences. These results clearly demonstrate the strong potential of LDI-MS and statistical analysis for the precise characterization of carbon materials and for distinguishing their origins and processing routes.</p><h3>Graphical abstract</h3><div><figure><div><div><picture><source><img></source></picture><span>The alternative text for this image may have been generated using AI.</span></div></div></figure></div></div>","PeriodicalId":712,"journal":{"name":"Nano Convergence","volume":"13 1","pages":""},"PeriodicalIF":11.0,"publicationDate":"2026-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1186/s40580-026-00551-3.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148010059","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"TiO2 nanolayer-assisted top-interface engineering for disturbance-free FeFETs: a blueprint for future van der Waals memory","authors":"Hyunjun Kang,&nbsp;Junhyeok Kwak,&nbsp;Giuk Kim,&nbsp;Sangho Lee,&nbsp;Yongyeon Kim,&nbsp;Sanghyun Park,&nbsp;Suhwan Lim,&nbsp;Kwangyou Seo,&nbsp;Wanki Kim,&nbsp;Daewon Ha,&nbsp;Jinho Ahn,&nbsp;Sanghun Jeon","doi":"10.1186/s40580-026-00550-4","DOIUrl":"10.1186/s40580-026-00550-4","url":null,"abstract":"<div><p>Metal-gate interlayer (G.IL)-ferroelectric (FE)-channel interlayer (Ch.IL)-Si (MIFIS) ferroelectric field-effect transistors (FeFETs) are attractive for large memory window (MW) and low-voltage FE NAND operation. Nevertheless, its fundamental operating principle also makes the device vulnerable to threshold voltage (V_th) shift under repeated disturb bias, which remains a major obstacle to array-level reliability. In this study, we employ a TiO₂ nanolayer (NL) at the upper interface of the HZO FE layer to address this issue while preserving the low-voltage advantage of the MIFIS structure. The inserted TiO₂ modifies the interfacial electrostatics and the ferroelectric switching characteristics at the same time. First, owing to its high dielectric constant and band alignment, it facilitates additional gate-side charge storage near the G.IL/FE interface. Second, it alters the switching nature of the underlying HZO toward a more abrupt response associated with enlarged effective domain size and improved remanent polarization. The proposed device with TiO₂ NL operates below 15 V, while maintaining a large MW of 7.57 V, which is 18.9% higher than the reference device. Notably, the proposed device remains disturbance-free even after 10⁵ cycles of 9 V/10 µs disturbance stress, whereas the counterpart experiences severe disturbance under the same conditions. Thus, we clarify that partial P switching acts as the primary driver of disturbances, as it precedes charge trapping and accelerates gate charge injection. Finally, while our top-interface engineering successfully optimizes gate-side dynamics, we propose that replacing the Si channel and bottom interlayer with emerging van der Waals (vdW) semiconductors and 2D insulators (e.g., h-BN) can fundamentally suppress channel-side charge injection (Q_it). Combining this vdW-based bottom-interface with our TiO₂ top-interface strategy presents a comprehensive blueprint to expand the MW and realize ultimate disturbance-free operation in next-generation computing architectures.</p><h3>Graphic abstract</h3><div><figure><div><div><picture><source><img></source></picture><span>The alternative text for this image may have been generated using AI.</span></div></div></figure></div></div>","PeriodicalId":712,"journal":{"name":"Nano Convergence","volume":"13 1","pages":""},"PeriodicalIF":11.0,"publicationDate":"2026-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1186/s40580-026-00550-4.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148004039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Interfacial dipole-engineered fiber optoelectronic devices with enhanced efficiency and stability","authors":"Jae Ho Kim,&nbsp;Youngjin Kim,&nbsp;Yonghun Kim,&nbsp;Jung-Dae Kwon,&nbsp;Jinhee Heo,&nbsp;Byung-Sik Moon,&nbsp;Bo Seung Jang,&nbsp;Dahyun Lee,&nbsp;Won June Kim,&nbsp;Hyung Woo Lee,&nbsp;Myungkwan Song,&nbsp;Jin-Woo Oh","doi":"10.1186/s40580-026-00549-x","DOIUrl":"10.1186/s40580-026-00549-x","url":null,"abstract":"<div><p>Organic light-emitting diodes (OLEDs) have been developed to enhance device lifetime, efficiency, and operational stability. However, the widely used hole injection layer (HIL) material poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) exhibits limitations such as high work function and acidity, which degrade device performance. This study introduces a [2-(9H-carbazol-9-yl)ethyl]phosphonic acid (2PACz) self-assembled monolayer (SAM) as an alternative to PEDOT:PSS. 2PACz-based OLEDs achieved lower turn-on voltages and higher external quantum efficiencies (EQEs) compared with PEDOT:PSS-based devices. The maximum EQE of green and red fiber organic light emitting diodes (FOLEDs) were 10.71% and 8.97%, respectively, representing 16.9% and 12.9% improvements compared with those of reference devices using PEDOT:PSS as the HIL. Furthermore, compared with TiO₂ fiber-shaped dye-sensitized solar cells (FS-DSSCs), the incorporation of TiO₂/2PACz increased the power conversion efficiency (PCE) from 5.67% to 6.53%, corresponding to an improvement of approximately 17%. Notably, the TiO₂/2PACz-based fiber-shaped gas sensors (FS-GSs) also exhibited enhanced gas sensing characteristics, including increased response and sensitivity, highlighting the multifunctionality and broad applicability of this interfacial engineering strategy across diverse optoelectronic platforms.</p><h3>Graphical abstract</h3><div><figure><div><div><picture><source><img></source></picture><span>The alternative text for this image may have been generated using AI.</span></div></div></figure></div></div>","PeriodicalId":712,"journal":{"name":"Nano Convergence","volume":"13 1","pages":""},"PeriodicalIF":11.0,"publicationDate":"2026-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1186/s40580-026-00549-x.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147830059","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design guidelines for self-healing materials in soft electronics","authors":"Chan Beom Park,&nbsp;Gunho Chang,&nbsp;Jooyeun Chong,&nbsp;Jiheong Kang","doi":"10.1186/s40580-026-00548-y","DOIUrl":"10.1186/s40580-026-00548-y","url":null,"abstract":"<div><p>Soft electronic devices require durability to endure their inherent exposure to diverse mechanical deformations, including scratches, punctures, and repeated bending. Without intrinsic damage recovery mechanisms, such deformations inevitably compromise mechanical integrity and limit device lifetime. To address this issue, the strategic incorporation of reversible dynamic bonds enables autonomous self-healing while simultaneously achieving high mechanical toughness through energy dissipation during bond rupture. To this end, optimizing the glass transition temperature and bond exchange kinetics is essential to ensure sufficient chain mobility for rapid interfacial diffusion and autonomous mechanical recovery. Building on the reversible bond nature, this review presents emerging self-healable and tough soft electronics applications in three major areas: (1) Multimodal electronic skins capable of comprehensive physiological signal sensing; (2) modularly reconfigurable systems with adhesive-free interlayer bonding that enable user-on-demand device assembly; (3) optoelectronic devices that seamlessly integrate light-emitting and pressure-sensing capabilities. These applications demonstrate that dynamic bond engineering enables elastomeric devices to simultaneously achieve mechanical robustness, functional adaptability, and autonomous self-healing. Such advancements position them as durable platforms with extended operational lifetimes, paving the way for next-generation wearable and implantable bioelectronics in real-world applications.</p><h3>Graphical abstract</h3><div><figure><div><div><picture><source><img></source></picture><span>The alternative text for this image may have been generated using AI.</span></div></div></figure></div></div>","PeriodicalId":712,"journal":{"name":"Nano Convergence","volume":"13 1","pages":""},"PeriodicalIF":11.0,"publicationDate":"2026-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1186/s40580-026-00548-y.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147796681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Gate dielectric stack design for 2D materials-based electronics","authors":"Minho Jin,&nbsp;Hojun Kim,&nbsp;Sejin Lee,&nbsp;Sangmoon Han,&nbsp;Ji-Yun Moon,&nbsp;Seungil Kim,&nbsp;Kyubeen Kim,&nbsp;Gwanwoo Kim,&nbsp;Gunwon Seo,&nbsp;Yoona Hwang,&nbsp;Jeongbin Lee,&nbsp;Sanggeun Bae,&nbsp;Zhihao Xu,&nbsp;Justin S. Kim,&nbsp;Soon-Gil Yoon,&nbsp;Jihun Mun,&nbsp;Jae-Hyun Lee,&nbsp;Min Sup Choi,&nbsp;Sang-Hoon Bae","doi":"10.1186/s40580-026-00546-0","DOIUrl":"10.1186/s40580-026-00546-0","url":null,"abstract":"<div><p>Two-dimensional (2D) semiconductors enable atomically thin channels and attractive electrostatics, but practical scaling increasingly hinges on gate-dielectric integration rather than channel performance. A key challenge is forming high-quality dielectrics on chemically inert, dangling-bond-free 2D surfaces while pushing equivalent oxide thickness to the sub-nanometer regime without excessive leakage, traps, or electrical breakdown. This review addresses the materials and process physics that govern dielectric formation in 2D devices, with an emphasis on atomic layer deposition nucleation, surface pretreatment and functionalization, and the use of seed and buffer layers for conformal high-κ oxides. The roles of layered insulators, such as hexagonal boron nitride, are discussed in terms of interface quality, electrostatic scaling limits, and transport limitations. The impact of dielectrics and processing on leakage mechanisms, defect generation, device-to-device variability, and reliability metrics, including time-dependent dielectric breakdown, bias-temperature instability, hysteresis, and threshold-voltage drift, is examined. Finally, we highlight van der Waals dry integration and dielectric transfer approaches that reduce process-induced damage and support wafer-scale uniformity, as well as opportunities for mixed-dimensional and 3D stacked architectures across logic, memory, and emerging functional systems.</p><h3>Graphical abstract</h3><div><figure><div><div><picture><source><img></source></picture><span>The alternative text for this image may have been generated using AI.</span></div></div></figure></div></div>","PeriodicalId":712,"journal":{"name":"Nano Convergence","volume":"13 1","pages":""},"PeriodicalIF":11.0,"publicationDate":"2026-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1186/s40580-026-00546-0.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147759328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Analysis of vertical AND flash memory for energy-efficient, scalable, fast CIM beyond vertical NAND flash memory","authors":"Jonghyun Ko,&nbsp;Jiseong Im,&nbsp;Sung-Ho Park,&nbsp;Jahyun Gu,&nbsp;Joonhyung Cho,&nbsp;Joon Hwang,&nbsp;Ryun-Han Koo,&nbsp;Jangsaeng Kim,&nbsp;Sung Yun Woo,&nbsp;Jong-Ho Lee","doi":"10.1186/s40580-026-00547-z","DOIUrl":"10.1186/s40580-026-00547-z","url":null,"abstract":"<div><p>Compute-in-memory (CIM) has emerged as a promising solution to mitigate the data movement bottleneck in von Neumann architectures. While vertical NAND (V-NAND) flash memory has been explored for CIM, its structural constraints, including pass-bias overhead and interconnect parasitic capacitances, limit energy efficiency. In this work, we present a comprehensive comparison between V-NAND and vertical AND (V-AND) flash memory for CIM applications. Analytical modeling and experimental validation demonstrate that V-AND achieves superior energy efficiency, particularly with low-inference-count regimes and increased stack height, by eliminating the bias pass requirement. These results demonstrate that V-AND offers compelling advantages over V-NAND, establishing it as a promising candidate for energy-efficient, scalable, and fast CIM accelerators.</p><h3>Graphical abstract</h3><div><figure><div><div><picture><source><img></source></picture><span>The alternative text for this image may have been generated using AI.</span></div></div></figure></div></div>","PeriodicalId":712,"journal":{"name":"Nano Convergence","volume":"13 1","pages":""},"PeriodicalIF":11.0,"publicationDate":"2026-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1186/s40580-026-00547-z.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147738764","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Resiquimod-loaded MOF525 enables synergistic photodynamic therapy and immunotherapy for colorectal cancer","authors":"Na Kyeong Lee,&nbsp;Chi-Pin James Wang,&nbsp;Soo-Hyun Lee,&nbsp;Nea Young Chun,&nbsp;Yu Jin Oh,&nbsp;Ulziituya Batjargal,&nbsp;Min-Seok Kim,&nbsp;WonJun Jang,&nbsp;Han-Jun Kim,&nbsp;Tae-Eun Park,&nbsp;Wooram Park,&nbsp;Chun Gwon Park,&nbsp;Se-Na Kim","doi":"10.1186/s40580-026-00544-2","DOIUrl":"10.1186/s40580-026-00544-2","url":null,"abstract":"<div>\u0000 \u0000 <p>Metal-organic frameworks (MOFs) represent a class of materials with exceptional potential for biomedical applications. In this study, a synergistic platform integrating photodynamic therapy (PDT) and immunotherapy was developed by loading the Toll-like receptor 7/8 agonist resiquimod (R848) into MOF525, a porphyrin-based metal–organic framework (R848@MOF525). Owing to the intrinsic photosensitizing properties of porphyrinic ligands and the high porosity of MOF525, R848@MOF525 was able to effectively generate reactive oxygen species upon 660 nm laser irradiation and sustainably release R848. In vitro studies using R848@MOF525 showed significant PDT-mediated cytotoxicity in colon adenocarcinoma cells (CT26) and increased extracellular release of adenosine triphosphate, indicating potential induction of immunogenic cell deaths. R848@MOF525 also strongly promoted dendritic cell maturation in vitro, further highlighting their potential roles as simultaneous immunostimulatory adjuvants. In a subcutaneous CT26 tumor-bearing mouse model, PDT using R848@MOF525 was able to yield faster tumor regression than with MOF525. Furthermore, tumor rechallenge tests also showed no evident tumor growth up to 3 weeks, indicating that PDT using R848@MOF525 could induce a durable systemic antitumor immunity. Notably, under an extended treatment interval, PDT mediated by MOF525 failed to suppress tumor growth, whereas PDT using R848@MOF525 successfully maintained antitumor efficacy. Collectively, these findings highlight R848@MOF525 as a promising platform for colorectal cancer treatment, synergistically employing immunotherapy to enhance the antitumor efficacy of PDT.</p>\u0000 <span>AbstractSection</span>\u0000 Graphical abstract\u0000 <div><figure><div><div><picture><source><img></source></picture><span>The alternative text for this image may have been generated using AI.</span></div></div></figure></div>\u0000 \u0000 </div>","PeriodicalId":712,"journal":{"name":"Nano Convergence","volume":"13 1","pages":""},"PeriodicalIF":11.0,"publicationDate":"2026-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1186/s40580-026-00544-2.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147738214","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Simulation-guided design of peptide–metal coordination interfaces for next-generation metallo-immunotherapy","authors":"Yeonwoo Jang,&nbsp;Naline Bellier,&nbsp;Kevin Kent Vincent Canlas,&nbsp;Ju Yeon Lee,&nbsp;Yujin Kim,&nbsp;Hansoo Park,&nbsp;James J. Moon","doi":"10.1186/s40580-026-00545-1","DOIUrl":"10.1186/s40580-026-00545-1","url":null,"abstract":"<div><p>Metal ions are crucial regulators of immune signaling, metabolism, and redox homeostasis, but their therapeutic deployment in cancer immunotherapy is limited by systemic toxicity and inadequate spatiotemporal control. Peptide–metal coordination interfaces offer a programmable solution by combining sequence-encoded recognition with tunable coordination chemistry, enabling controlled metal speciation, bioavailability, and stimulus-responsive functions in complex biological environments. This review summarizes how biologically relevant ions, including Mn²⁺, Zn²⁺, Cu²⁺, and Fe²⁺/Fe³⁺, modulate innate and adaptive immunity through direct reprogramming of macrophages, dendritic cells, T cells, and natural killer cells, as well as through indirect remodeling of the tumor microenvironment via immunogenic cell death, redox perturbation, hypoxia alleviation, and disruption of immunosuppressive pathways. We discuss essential peptide–metal coordination principles, including natural binding motifs, synthetic coordination primitives, and stimulus-responsive switching mechanisms that enable dynamic regulation of metal–ligand interactions. To accelerate rational discovery, we outline a simulation-guided computational toolbox integrating docking-based prescreening, molecular dynamics, and metadynamics for stability assessment, quantum mechanical/molecular mechanics approaches for electronic-level accuracy, and machine learning workflows for multi-parameter optimization across high-dimensional design spaces. Finally, we survey the application landscape of peptide–metal platforms, from self-assembled ion-reservoir architectures to hybrid systems incorporating lipidic, polymeric, inorganic, or biomimetic carriers for improved pharmacokinetics and combinatorial functionality. Collectively, this perspective connects coordination chemistry with immunoengineering and highlights simulation-guided strategies for designing adaptive metallo-immunotherapeutic nanoplatforms with spatiotemporal precision and translational potential.</p><h3>Graphical abstract</h3><div><figure><div><div><picture><source><img></source></picture><span>The alternative text for this image may have been generated using AI.</span></div></div></figure></div></div>","PeriodicalId":712,"journal":{"name":"Nano Convergence","volume":"13 1","pages":""},"PeriodicalIF":11.0,"publicationDate":"2026-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC13076748/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147669521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Substrate-field-modulated remote-van der Waals hybrid epitaxy in transition metal dichalcogenide heterostructures","authors":"Lia Saptini Handriani,&nbsp;Suhee Jang,&nbsp;Yelim Kim,&nbsp;Hyuncheol Yun,&nbsp;Dae Yeop Jeong,&nbsp;Hyeonsu Park,&nbsp;Zhe Gao,&nbsp;Jae-il Jang,&nbsp;Won Il Park","doi":"10.1186/s40580-026-00542-4","DOIUrl":"10.1186/s40580-026-00542-4","url":null,"abstract":"<div><p>Two-dimensional (2D) transition-metal dichalcogenide (TMDC) heterostructures are promising for next-generation optoelectronics, yet the mechanisms controlling their vertical heteroepitaxy remain poorly understood. Here, we systematically investigate metal–organic chemical vapor deposition growth of MoS₂/WS₂ and WS₂/MoS₂ vertical heterostructures across varying interlayer thicknesses (monolayer to multilayer) and substrates (Si, SiO₂ and c-sapphire). We identify a substrate-field-modulated “remote–van der Waals (vdW) hybrid epitaxy” regime, in which vertical overgrowth is confined to a narrow thickness window (~ 1–3 layers), with nucleation density strongly influenced by substrate polarity and defect chemistry. High-resolution STEM reveals that, in the regions where vertical growth occurs, the in-plane crystallographic registry is primarily governed by vdW coupling to the 2D template, yielding a highly preferred single-orientation registry across the examined regions for both stacking orders. This dual-control mechanism decouples growth propensity from epitaxial alignment, providing a scalable framework for synthesizing high-quality 2D vertical heterostructures with precisely engineered interfaces.</p><h3>Graphical abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":712,"journal":{"name":"Nano Convergence","volume":"13 1","pages":""},"PeriodicalIF":11.0,"publicationDate":"2026-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1186/s40580-026-00542-4.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147562004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Beyond persistence: SERS-driven strategies for PFAS detection and monitoring","authors":"Dong Hwan Nam,&nbsp;Hayoung Kim,&nbsp;Hongyi Ban,&nbsp;Özce Durak,&nbsp;Jaejun Park,&nbsp;John D. Fortner,&nbsp;Seunghyun Lee","doi":"10.1186/s40580-026-00538-0","DOIUrl":"10.1186/s40580-026-00538-0","url":null,"abstract":"<p>This review explores surface-enhanced Raman spectroscopy (SERS)-driven strategies for the detection and monitoring of per- and polyfluoroalkyl substances (PFAS), a class of nearly 15,000 synthetic compounds known for their exceptional chemical stability and environmental persistence. Due to the high bond dissociation energy of carbon-fluorine bonds, PFAS accumulate globally in water and soil, posing severe risks to human health, including cancer, liver toxicity, and immune suppression. As regulatory bodies like the U.S. EPA establish stringent maximum contaminant levels as low as 4 ng/L (ppt level), there is an urgent demand for rapid, cost-effective, and portable sensing platforms to complement traditional, high-cost analytical techniques like LC-MS/MS. SERS is highlighted as a powerful analytical tool capable of providing ultra-sensitive \"molecular fingerprinting\" by amplifying Raman signals through localized surface plasmon resonance (LSPR) on metallic nanostructures. This paper categorizes the fundamental mechanisms of SERS-based PFAS detection into three primary interaction strategies: (1) host-guest inclusion using molecular cavities like β-cyclodextrin or MOFs, (2) covalent bonding between PFAS functional groups and substrate surfaces, and (3) physical adsorption driven by hydrophobic and electrostatic forces. Despite its potential, practical SERS deployment faces challenges such as weak PFAS-surface affinity and spectral interference from complex environmental matrices. To address these, the review discusses emerging advancements, including fluorophilic surface functionalization, deep learning-based spectral deconvolution, and the integration of microfluidic platforms for real-time monitoring. Ultimately, these SERS-driven innovations provide a critical pathway toward achieving on-site, high-throughput quantification of trace PFAS in diverse water resources.</p>","PeriodicalId":712,"journal":{"name":"Nano Convergence","volume":"13 1","pages":""},"PeriodicalIF":11.0,"publicationDate":"2026-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1186/s40580-026-00538-0.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147336655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}