Nano Convergence最新文献

{"title":"Unraveling ionic switching dynamics in high-k dielectric double-gate transistors via low-frequency noise spectroscopy","authors":"Soi Jeong,&nbsp;Chang-Hyeon Han,&nbsp;Been Kwak,&nbsp;Ryun-Han Koo,&nbsp;Youngchan Cho,&nbsp;Jangsaeng Kim,&nbsp;Jong-Ho Lee,&nbsp;Daewoong Kwon,&nbsp;Wonjun Shin","doi":"10.1186/s40580-025-00512-2","DOIUrl":"10.1186/s40580-025-00512-2","url":null,"abstract":"<p>High-k dielectric materials such as HfO₂ have garnered significant attention for their potential applications in advanced electronic devices due to their superior dielectric properties. Particularly, oxygen vacancies within these materials can be strategically utilized to implement memory functionalities. However, the precise analysis of the electrical, chemical, and electrochemical characteristics related to oxygen vacancies remains challenging. In this study, we fabricated a double-gate thin-film transistor (TFT) structure employing HfO₂ as the gate dielectric for both top and bottom gates, with the oxygen vacancy concentration intentionally modulated by introducing a TiO₂ interlayer at the bottom gate stack. This TiO₂ layer effectively increases the oxygen vacancy content within the bottom gate dielectric, facilitating oxygen vacancy migration-based memory operation primarily through the bottom gate. The resulting asymmetry between the top and bottom gates was systematically analyzed using low-frequency noise (LFN) characterization, elucidating for the first time the distinct impacts of oxygen vacancy modulation on device electrical behavior and operational mechanisms. This comprehensive LFN analysis provides critical insights into the fundamental dynamics of defect-mediated memory operation, highlighting the importance of dielectric engineering in optimizing next-generation oxide-based electronic devices.</p><p>This study unravels ionic switching dynamics in double-gate HfO2–IGZO TFTs, where a TiO2 scavenging layer modulates oxygen vacancies to enable memory operation. Low-frequency noise spectroscopy reveals a ionic-dependent transition between distinct noise mechanisms, providing fundamental insights into vacancy-driven dynamics and guiding the optimization of high-k dielectric transistors for next-generation computing.</p>","PeriodicalId":712,"journal":{"name":"Nano Convergence","volume":"12 1","pages":""},"PeriodicalIF":11.0,"publicationDate":"2025-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://nanoconvergencejournal.springeropen.com/counter/pdf/10.1186/s40580-025-00512-2","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145210244","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Dynamic pass bias control for temperature-resilient neural networks using vertical NAND flash memory","authors":"Sung-Ho Park,&nbsp;Jiseong Im,&nbsp;Jonghyun Ko,&nbsp;Joon Hwang,&nbsp;Yeongheon Yang,&nbsp;Jong-Won Back,&nbsp;Ryun-Han Koo,&nbsp;In-Seok Lee,&nbsp;Dongbeen Shin,&nbsp;Mingyun Oh,&nbsp;Gyuweon Jung,&nbsp;Jong-Ho Lee","doi":"10.1186/s40580-025-00513-1","DOIUrl":"10.1186/s40580-025-00513-1","url":null,"abstract":"<div><p>Vertical NAND (V-NAND) flash memory has emerged as a promising candidate for neuromorphic computing platforms due to its high density, scalability, and reliability. However, synaptic weights stored in V-NAND cells are highly sensitive to ambient temperature variations, resulting in significant conductance shifts that degrade the inference accuracy of neural networks. To address this challenge, we propose a dynamic pass bias (DPB) control scheme that compensates for temperature-induced weight variations without requiring memory reprogramming or additional hardware overhead. By adaptively adjusting the pass bias applied to unselected word-lines during read operations, the DPB scheme effectively stabilizes the differential conductance representation of weights under thermal fluctuations. In addition, we introduce a temperature-adaptive biasing circuit composed of a single-crystalline silicon MOSFET and V-NAND strings. Exploiting their opposing temperature-dependent resistance characteristics, this passive circuit naturally reduces the pass bias as temperature rises, enabling real-time analog compensation without explicit sensing or digital control logic. Experimental measurements on commercial V-NAND devices fabricated with over 100 WL layers reveal substantial shifts in bit-line currents with increasing temperature. Simulation results based on CIFAR-10 image classification using a VGG-11 network demonstrate that the DPB scheme significantly mitigates accuracy degradation across a wide temperature range. Notably, adjusting pass bias at lower temperatures improves classification accuracy by up to 10.5%p compared to conventional fixed-bias operations. These results highlight the effectiveness of dynamic pass bias control—both digitally and circuit-assisted—as a lightweight and scalable solution for enhancing the temperature resilience of V-NAND flash memory-based neural networks.</p><h3>Graphical abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":712,"journal":{"name":"Nano Convergence","volume":"12 1","pages":""},"PeriodicalIF":11.0,"publicationDate":"2025-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://nanoconvergencejournal.springeropen.com/counter/pdf/10.1186/s40580-025-00513-1","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145197951","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Emergence of relaxor-like ferroelectric nature in nanograined Pb(Zr0.95Ti0.05)O3 ceramic thick films for energy storage applications","authors":"Nirmal Prashanth Maria Joseph Raj,&nbsp;Hyunseok Song,&nbsp;Satyabrata Lenka,&nbsp;Geon-Tae Hwang,&nbsp;Dae-Yong Jeong,&nbsp;Mahesh Peddigari,&nbsp;Jungho Ryu","doi":"10.1186/s40580-025-00511-3","DOIUrl":"10.1186/s40580-025-00511-3","url":null,"abstract":"<div><p>In this study, we demonstrated the nanostructuring of the ferroelectric (FE) phase of Pb(Zr_0.95Ti_0.05)O₃ (PZT-95/5) into a thick film with relaxor<b>-</b>like FE (RFE) characteristics. This transformation results in exceptionally high dielectric breakdown strength (<i>E</i>_<i>DBS</i>) and energy storage density properties. The high kinetic energy from aerosol deposition transformed the bulk PZT-95/5 from a normal FE system into a RFE system by forming a nanostructured grain with nanodomains within a nonpolar matrix. This nanostructure enables easy domain switching, resulting in low remanent polarization. The resulting high density of grain boundaries due to nanograin formation and the nonpolar structure act as barriers to charge flow, resulting in high breakdown strength. Collectively, these effects resulted in a significantly enhanced <i>E</i>_<i>DBS</i> of 5.6 MV/cm and a maximum polarization of 80 µC/cm². These properties, evidenced by slim hysteresis loops, demonstrate that the prepared PZT-95/5 thick film is a superior capacitive material with a high recoverable energy density of 116 J/cm³. Furthermore, the film exhibited reliable fatigue endurance up to 10⁷ cycles and thermal stability from room temperature to 140^°C. The film also exhibited a peak power density of 35 MW/cm³ under a practical electric field of 0.45 MV/cm (180 V) and a fast discharging speed (<i>τ</i>_0.9) of 230 ns. These properties, in addition to the minimal fabrication steps and superior capacitive characteristics, demonstrate the strong potential of the prepared PZT-95/5 thick film for use in next-generation energy storage devices.</p></div>","PeriodicalId":712,"journal":{"name":"Nano Convergence","volume":"12 1","pages":""},"PeriodicalIF":11.0,"publicationDate":"2025-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12480236/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145190662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Efficient methods of isolation and purification of extracellular vesicles","authors":"Taewoon Kim,&nbsp;Jong Wook Hong,&nbsp;Luke P. Lee","doi":"10.1186/s40580-025-00509-x","DOIUrl":"10.1186/s40580-025-00509-x","url":null,"abstract":"<div><p>Living cells produce nanometer scales of extracellular vesicles (EVs) that have attracted considerable interest due to their transformative effects on diagnostics and therapies for cancer and other diseases. While significant advancements have been made in grasping the physical and chemical foundations of separation techniques for EVs, challenges must be overcome to ensure effective EV purification for diverse life sciences and clinical applications. This review highlights the most significant developments in efficient isolation and purification methods for EVs in transformative medicine. We examine the basic structure of exosomes and how to obtain specimens containing exosomes and EVs from various body fluids. We investigate the principles of physical, chemical, and biological isolation methods of EVs. We systematically evaluate different designs of microfluidics-based EV purification methods. We provide a comprehensive overview of the applications of exosomes in the life sciences and medicine. The precise engineering of EV isolation and purification generates a high yield and purity, offering practical solutions for translational medicine.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":712,"journal":{"name":"Nano Convergence","volume":"12 1","pages":""},"PeriodicalIF":11.0,"publicationDate":"2025-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://nanoconvergencejournal.springeropen.com/counter/pdf/10.1186/s40580-025-00509-x","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145136118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Analytical fidelity calculations for photonic linear cluster state generation","authors":"Rohit Prasad,&nbsp;Simon D. Reiß,&nbsp;Giora Peniakov,&nbsp;Yorick Reum,&nbsp;Peter van Loock,&nbsp;Sven Höfling,&nbsp;Tobias Huber-Loyola,&nbsp;Andreas Theo Pfenning","doi":"10.1186/s40580-025-00510-4","DOIUrl":"10.1186/s40580-025-00510-4","url":null,"abstract":"<div><p>By precisely timed optical excitation of their spin, optical emitters such as semiconductor quantum dots or atoms can be harnessed as sources of linear photonic cluster states. This significantly reduces the required resource overhead to reach fault-tolerant optical quantum computing. Here, we develop an algorithm that analytically tracks the global density matrix through the process of the protocol for generating linear-cluster states by Lindner and Rudolph. From this we derive a model to calculate the entangling gate fidelity and the state fidelity of the generated linear optical cluster states. Our model factors in various sources of error, such as spin decoherence and the finite excited state lifetime. Additionally, we highlight the presence of partial reinitialization of spin coherence with each photon emission, eliminating the hard limitation of coherence time. Our framework provides valuable insight into the cost-to-improvement trade-offs for device design parameters as well as the identification of optimal working points. For a combined state-of-the-art quantum dot with a spin coherence time of <span>({T}_{2}^{*}=535)</span> ns and an excited state lifetime of <span>(tau =23)</span> ps, we show that a near-unity entangling gate fidelity as well as near-unity state fidelity for 3-photon and 7-photon linear cluster states can be reached.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":712,"journal":{"name":"Nano Convergence","volume":"12 1","pages":""},"PeriodicalIF":11.0,"publicationDate":"2025-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://nanoconvergencejournal.springeropen.com/counter/pdf/10.1186/s40580-025-00510-4","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145084734","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Recent progress of gas sensors toward olfactory display development","authors":"Ye-Ji Kim,&nbsp;Chae Young Woo,&nbsp;Yeonggwon Kim,&nbsp;Sung Min Kim,&nbsp;Na-Yeong Kim,&nbsp;Hyung Woo Lee,&nbsp;Jin-Woo Oh","doi":"10.1186/s40580-025-00508-y","DOIUrl":"10.1186/s40580-025-00508-y","url":null,"abstract":"<div>\u0000 \u0000 <p>Olfactory display systems, designed to replicate the human sense of smell, rely on gas sensors that are fast, selective, and reliable. From this perspective, this review highlights recent progress in sensing materials and integration strategies that enable room-temperature operation, rapid response and recovery, and closed-loop control for realistic odor delivery. Advances are classified into three categories: organic, inorganic, and hybrid systems. Organic materials, including conductive polymers and biomolecules, offer tunable selectivity and lightweight flexibility. Inorganic semiconductors, especially metal oxides, provide high sensitivity and durability, though they typically require elevated temperatures. Hybrid architectures, exemplified by M13 bacteriophage–carbon nanotube composites, merge these strengths to achieve superior performance under ambient conditions. Particular emphasis is placed on sensors for ethylene, hydrogen sulfide, hydrogen, acetone, and nitrogen dioxide—gases critical to food preservation, environmental monitoring, and healthcare. Finally, we discuss persistent challenges, such as selectivity under complex conditions, device miniaturization, and closed-loop integration, and propose strategic research directions toward immersive, real-time olfactory display technologies.</p>\u0000 <div><figure><div><div><picture><source><img></source></picture></div></div></figure></div>\u0000 </div>","PeriodicalId":712,"journal":{"name":"Nano Convergence","volume":"12 1","pages":""},"PeriodicalIF":11.0,"publicationDate":"2025-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://nanoconvergencejournal.springeropen.com/counter/pdf/10.1186/s40580-025-00508-y","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144918647","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Physical correlation between stochasticity and process-induced damage in ferroelectric memory devices","authors":"Ryun-Han Koo,&nbsp;Seungwhan Kim,&nbsp;Jiseong Im,&nbsp;Sangwoo Ryu,&nbsp;Kangwook Choi,&nbsp;Sung-Ho Park,&nbsp;Jonghyun Ko,&nbsp;Jongho Ji,&nbsp;Mingyun Oh,&nbsp;Jangsaeng Kim,&nbsp;Gyuweon Jung,&nbsp;Sung-Tae Lee,&nbsp;Daewoong Kwon,&nbsp;Wonjun Shin,&nbsp;Jong-Ho Lee","doi":"10.1186/s40580-025-00505-1","DOIUrl":"10.1186/s40580-025-00505-1","url":null,"abstract":"<div><p>This study investigates the influence of sputtering plasma-induced damage on stochastic characteristics in HfZrO₂ (HZO)-based ferroelectric tunnel junctions (FTJs), with an emphasis on memory and neuromorphic device optimization. Variation of the sputtering plasma power during top electrode deposition introduces distinct levels of trap within the HZO layer. Low-frequency noise (LFN) spectroscopy and temperature-dependent electrical measurements confirm that higher plasma power generates additional shallow-level traps, thereby promoting Poole-Frenkel conduction while simultaneously increasing current noise magnitude. Although the resulting enhancements in on-current density and ferroelectric tunnel electroresistance (TER) ratio are beneficial for high-density memory integration, these conditions also elevate stochastic fluctuations, potentially degrading read margins and long-term endurance. Furthermore, the observed increase in stochasticity negatively affects neuromorphic inference accuracy, particularly after endurance cycling stress. These results demonstrate the critical interplay among plasma process conditions, trap density, and LFN in FTJs. By systematically engineering sputtering process parameters, we optimize the electrical performance with minimized stochastic noise. This approach provides guidelines for the development of next-generation ferroelectric-based memories and neuromorphic systems with consideration of stochasticity, where robust performance and reliability are imperative for large-scale integration.</p><h3>Graphical abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":712,"journal":{"name":"Nano Convergence","volume":"12 1","pages":""},"PeriodicalIF":11.0,"publicationDate":"2025-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://nanoconvergencejournal.springeropen.com/counter/pdf/10.1186/s40580-025-00505-1","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144918650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Lead-free halide perovskite memristors for scalable crossbar arrays","authors":"Do Yeon Heo,&nbsp;Hyojung Kim","doi":"10.1186/s40580-025-00507-z","DOIUrl":"10.1186/s40580-025-00507-z","url":null,"abstract":"<div><p>Lead-free halide-perovskite memristors have advanced rapidly from initial proof-of-concept junctions to centimeter-scale selector-free crossbar arrays, maintaining full compatibility with CMOS backend processes. In these highly interconnected matrices, surface passivation, strain-relief interfaces, and non-toxic B-site substitutions successfully reduce sneak currents and stabilize resistance states. The Introduction section lays out the structural and functional basis, detailing phase behavior, bandgap tunability, and tolerance-factor-guided crystal design within Ruddlesden–Popper, Dion–Jacobson, vacancy-ordered, and double-perovskite frameworks, each of which is evaluated for its ability to confine filaments and reduce crosstalk in crossbar configurations. The following sections examine the characteristics of charge transport and the dynamics of ion migration, followed by a detailed outline of chemical and mechanical stabilization strategies in response to the high current densities and heat fluxes typical of large-area crossbars. The comparison of solution, vapor, and solid-state synthesis routes focuses on aspects such as film uniformity, grain-boundary control, and compatibility with flexible or heterogeneous substrates, all evaluated against the demanding uniformity requirements of multilevel crossbar programming. The principles of resistive switching and array architecture are elaborated upon, emphasizing the three-dimensional (3D) stacking of selector-integrated vertical nanowires and hybrid photonic-memristive layers as promising approaches to enhance bandwidth and reduce energy consumption per operation. By integrating sustainable chemistry with scalable crossbar engineering, these memories are set to provide ultra-dense, energy-efficient hardware that meets the performance demands of contemporary artificial intelligence accelerators while adhering to new regulations on hazardous materials in electronic devices.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":712,"journal":{"name":"Nano Convergence","volume":"12 1","pages":""},"PeriodicalIF":11.0,"publicationDate":"2025-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://nanoconvergencejournal.springeropen.com/counter/pdf/10.1186/s40580-025-00507-z","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144893933","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"SERS-based aptasensor for culture-free detection of Escherichia coli in urinary tract infection diagnosis","authors":"Kihyun Kim,&nbsp;Sohyun Park,&nbsp;Suyoung Kang,&nbsp;Mi-Kyung Lee,&nbsp;Lingxin Chen,&nbsp;Jaebum Choo","doi":"10.1186/s40580-025-00506-0","DOIUrl":"10.1186/s40580-025-00506-0","url":null,"abstract":"<div><p>A surface-enhanced Raman scattering (SERS)-based aptasensor was developed for the rapid and sensitive detection of <i>Escherichia coli</i> (<i>E. coli</i>), a major pathogen in urinary tract infections (UTIs). The sensor utilizes magnetic beads embedded with gold nanoparticles (MB-AuNPs) functionalized with capture DNA (cDNA) as both the SERS-active substrate and magnetic separation tool. The detection mechanism relies on an aptamer DNA-probe DNA complex: when the aptamer binds specifically to <i>E. coli</i>, the probe DNA is released and subsequently hybridizes with cDNA on the MB-AuNPs. This brings a Cy5 Raman label close to the gold surface, generating a strong SERS signal. The assay offers a one-step process, eliminating the need for bacterial culture or nucleic acid amplification, and completes within approximately 6 h. Quantitative analysis demonstrated a detection limit of 5.9 × 10³ CFU/mL, well below the clinical threshold for UTIs, with a reliable calibration curve (R² = 0.990). Selectivity tests confirmed high specificity for <i>E. coli</i> without cross-reactivity to other bacteria. Clinical evaluation using 21 urine samples showed high diagnostic performance: 100% sensitivity, 91% specificity, 95% accuracy, and 100% precision compared to standard urine culture. These results highlight the aptasensor’s potential as a rapid, sensitive, and specific alternative for UTI diagnosis in clinical settings.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":712,"journal":{"name":"Nano Convergence","volume":"12 1","pages":""},"PeriodicalIF":11.0,"publicationDate":"2025-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://nanoconvergencejournal.springeropen.com/counter/pdf/10.1186/s40580-025-00506-0","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144880758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Sustainable and eco-friendly syntheses of green MXenes for advanced battery applications","authors":"Seonju Kim,&nbsp;Hyeonmin Jo,&nbsp;Jiyoung Yun,&nbsp;Jun-Won Lee,&nbsp;Jiung Cho,&nbsp;Kisuk Kang,&nbsp;Hee-Dae Lim","doi":"10.1186/s40580-025-00504-2","DOIUrl":"10.1186/s40580-025-00504-2","url":null,"abstract":"<div><p>MXenes, a versatile family of two-dimensional (2D) transition metal carbides and nitrides, have attracted significant attention for battery applications due to their exceptional properties, such as high electronic conductivity, tunable microstructure, robust mechanical and chemical stability, and compositional diversity. However, despite these advantages, conventional MXene synthesis methods-relying heavily on toxic acid etching<b>-</b>pose serious environmental hazards, undermining their suitability for sustainable energy applications. In this context, eco-friendly and non-toxic MXene synthesis routes have become increasingly critical for enabling the widespread adoption of MXene, driving extensive research into alternative, green synthetic approaches. These recent advances in environmentally benign synthesis are pivotal to unlocking the full potential of MXenes for diverse next-generation battery technologies. In this review, we provide a comprehensive overview of green and sustainable MXene synthesis strategies, highlighting the latest developments that go beyond traditional fluorine-based routes. Each synthetic process is comparatively analyzed with respect to its efficacy, limitations, and implications for practical application as key functional components in lithium-ion batteries (LIBs) and post-LIB systems. Finally, we offer a perspective on how the development of eco-friendly MXenes can contribute to overcoming the industrial challenges facing advanced battery technologies.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":712,"journal":{"name":"Nano Convergence","volume":"12 1","pages":""},"PeriodicalIF":11.0,"publicationDate":"2025-07-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12297252/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144726407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}