Nano Convergence最新文献

Lung-homing nanoliposomes for early intervention in NETosis and inflammation during acute lung injury.

IF 13.4 2区材料科学

Nano Convergence Pub Date : 2025-02-03 DOI: 10.1186/s40580-025-00475-4

Jungbum Kim, Donghyuk Seo, So-Yeol Yoo, Hye-Jin Lee, Jisun Kim, Ji Eun Yeom, Jae-Young Lee, Wooram Park, Kyung Soo Hong, Wonhwa Lee

{"title":"Lung-homing nanoliposomes for early intervention in NETosis and inflammation during acute lung injury.","authors":"Jungbum Kim, Donghyuk Seo, So-Yeol Yoo, Hye-Jin Lee, Jisun Kim, Ji Eun Yeom, Jae-Young Lee, Wooram Park, Kyung Soo Hong, Wonhwa Lee","doi":"10.1186/s40580-025-00475-4","DOIUrl":"https://doi.org/10.1186/s40580-025-00475-4","url":null,"abstract":"<p><p>Acute lung injury (ALI) is characterized by severe inflammation in lung tissue, excessive immune response and impaired lung function. In hospitalized high-risk patients and cases of secondary infection due to surgical contamination, it can lead to higher mortality rates and require immediate intervention. Currently, clinical treatments are limited in symptomatic therapy as mechanical ventilation and corticosteroids, having insufficient efficacy in mitigating the cause of progression to severe illness. Here we report a pulmonary targeting lung-homing nanoliposome (LHN) designed to attenuate excessive Neutrophil Extracellular Trap formation (NETosis) through sivelestat and DNase-1, coupled with an anti-inflammatory effect mediated by 25-hydroxycholesterol (25-HC), offering a promising intervention for the acute phase of ALI. Through intratracheal delivery, we intend prompt and constant action within the lungs to effectively prevent excessive NETosis. Isolated neutrophils from blood samples of severe ARDS patients demonstrated significant anti-NETosis effects, as well as reduced proinflammatory cytokine secretion. Furthermore, in a murine model of LPS-induced ALI, we confirmed improvements in lung histopathology, and early respiratory function. Also, attenuation of systemic inflammatory response syndrome (SIRS), with notable reductions in NETosis and neutrophil trafficking was investigated. This presents a targeted therapeutic approach that can be applied in early stages of high-risk patients to prevent severe pulmonary disease progression.</p>","PeriodicalId":712,"journal":{"name":"Nano Convergence","volume":"12 1","pages":"8"},"PeriodicalIF":13.4,"publicationDate":"2025-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143078377","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhanced high-energy proton radiation hardness of ZnO thin-film transistors with a passivation layer.

IF 13.4 2区材料科学

Nano Convergence Pub Date : 2025-01-30 DOI: 10.1186/s40580-025-00474-5

Yongsu Lee, Hae-Won Lee, Su Jin Kim, Jeong Min Park, Byoung Hun Lee, Chang Goo Kang

{"title":"Enhanced high-energy proton radiation hardness of ZnO thin-film transistors with a passivation layer.","authors":"Yongsu Lee, Hae-Won Lee, Su Jin Kim, Jeong Min Park, Byoung Hun Lee, Chang Goo Kang","doi":"10.1186/s40580-025-00474-5","DOIUrl":"10.1186/s40580-025-00474-5","url":null,"abstract":"<p><p>Metal-oxide thin-film semiconductors have been highlighted as next-generation space semiconductors owing to their excellent radiation hardness based on their dimensional advantages of very low thickness and insensitivity to crystal structure. However, thin-film transistors (TFTs) do not exhibit intrinsic radiation hardness owing to the chemical reactions at the interface exposed to ambient air. In this study, significantly enhanced radiation hardness of Al<sub>2</sub>O<sub>3</sub>-passivated ZnO TFTs against high-energy protons with energies of up to 100 MeV is obtained owing to the passivation layer blocking interactions with external reactants, thereby maintaining the chemical stability of the thin-film semiconductor. These results highlight the potential of passivated metal-oxide thin films for developing reliable radiation-hardened semiconductor devices that can be used in harsh space environments. In addition, the relationship between low-frequency noise and defects due to oxygen vacancies was revealed, which can be utilized to improve device reliability.</p>","PeriodicalId":712,"journal":{"name":"Nano Convergence","volume":"12 1","pages":"7"},"PeriodicalIF":13.4,"publicationDate":"2025-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11782758/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143063086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Correction: Engineering extracellular vesicles for ROS scavenging and tissue regeneration.

IF 13.4 2区材料科学

Nano Convergence Pub Date : 2025-01-27 DOI: 10.1186/s40580-024-00470-1

Ahmed Abdal Dayem, Ellie Yan, Minjae Do, Yoojung Kim, Yeongseo Lee, Ssang-Goo Cho, Deok-Ho Kim

引用次数: 0

Correction: Interfacial charge transfer on hierarchical synergistic shell wall of MXene/MoS₂ on CdS nanospheres: heterostructure integrity for visible light responsive photocatalytic H₂ evolution.

IF 13.4 2区材料科学

Nano Convergence Pub Date : 2025-01-27 DOI: 10.1186/s40580-024-00469-8

Kugalur Shanmugam Ranjith, Ali Mohammadi, Ganji Seeta Rama Raju, Yun Suk Huh, Young-Kyu Han

引用次数: 0

Expanding the frontiers of electrocatalysis: advanced theoretical methods for water splitting.

IF 13.4 2区材料科学

Nano Convergence Pub Date : 2025-01-24 DOI: 10.1186/s40580-024-00467-w

Seong Chan Cho, Jun Ho Seok, Hung Ngo Manh, Jae Hun Seol, Chi Ho Lee, Sang Uck Lee

{"title":"Expanding the frontiers of electrocatalysis: advanced theoretical methods for water splitting.","authors":"Seong Chan Cho, Jun Ho Seok, Hung Ngo Manh, Jae Hun Seol, Chi Ho Lee, Sang Uck Lee","doi":"10.1186/s40580-024-00467-w","DOIUrl":"10.1186/s40580-024-00467-w","url":null,"abstract":"<p><p>Electrochemical water splitting, which encompasses the hydrogen evolution reaction (HER) and the oxygen evolution reaction (OER), offers a promising route for sustainable hydrogen production. The development of efficient and cost-effective electrocatalysts is crucial for advancing this technology, especially given the reliance on expensive transition metals, such as Pt and Ir, in traditional catalysts. This review highlights recent advances in the design and optimization of electrocatalysts, focusing on density functional theory (DFT) as a key tool for understanding and improving catalytic performance in the HER and OER. We begin by exploring DFT-based approaches for evaluating catalytic activity under both acidic and alkaline conditions. The review then shifts to a material-oriented perspective, showcasing key catalyst materials and the theoretical strategies employed to enhance their performance. In addition, we discuss scaling relationships that exist between binding energies and electronic structures through the use of charge-density analysis and d-band theory. Advanced concepts, such as the effects of adsorbate coverage, solvation, and applied potential on catalytic behavior, are also discussed. We finally focus on integrating machine learning (ML) with DFT to enable high-throughput screening and accelerate the discovery of novel water-splitting catalysts. This comprehensive review underscores the pivotal role that DFT plays in advancing electrocatalyst design and highlights its potential for shaping the future of sustainable hydrogen production.</p>","PeriodicalId":712,"journal":{"name":"Nano Convergence","volume":"12 1","pages":"4"},"PeriodicalIF":13.4,"publicationDate":"2025-01-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11759758/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143035794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ferroelectric capacitive memories: devices, arrays, and applications 铁电容性存储器：器件、阵列和应用

IF 13.4 2区材料科学

Nano Convergence Pub Date : 2025-01-22 DOI: 10.1186/s40580-024-00463-0

Zuopu Zhou, Leming Jiao, Zijie Zheng, Yue Chen, Kaizhen Han, Yuye Kang, Dong Zhang, Xiaolin Wang, Qiwen Kong, Chen Sun, Jiawei Xie, Xiao Gong

{"title":"Ferroelectric capacitive memories: devices, arrays, and applications","authors":"Zuopu Zhou, Leming Jiao, Zijie Zheng, Yue Chen, Kaizhen Han, Yuye Kang, Dong Zhang, Xiaolin Wang, Qiwen Kong, Chen Sun, Jiawei Xie, Xiao Gong","doi":"10.1186/s40580-024-00463-0","DOIUrl":"10.1186/s40580-024-00463-0","url":null,"abstract":"<div><p>\u0000 Ferroelectric capacitive memories (FCMs) utilize ferroelectric polarization to modulate device capacitance for data storage, providing a new technological pathway to achieve two-terminal non-destructive-read ferroelectric memory. In contrast to the conventional resistive memories, the unique capacitive operation mechanism of FCMs transfers the memory reading and in-memory computing to charge domain, offering ultra-high energy efficiency, better compatibility to large-scale array, and negligible read disturbance. In recent years, extensive research has been conducted on FCMs. Various device designs were proposed and experimentally demonstrated with progressively enhanced performance, showing remarkable potential of the novel technology. This article summarizes several typical FCM devices by introducing their mechanisms, comparing their performance, and discussing their limitations. We further investigate the capacitive crossbar array operation and review the recent progress in the FCM integration and array-level demonstrations. In addition, we present the computing-in-memory applications of the FCMs to realize ultra-low-power machine learning acceleration for future computing systems.</p></div>","PeriodicalId":712,"journal":{"name":"Nano Convergence","volume":"12 1","pages":""},"PeriodicalIF":13.4,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://nanoconvergencejournal.springeropen.com/counter/pdf/10.1186/s40580-024-00463-0","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142995721","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Multi-gate neuron-like transistors based on ensembles of aligned nanowires on flexible substrates 基于柔性衬底上排列纳米线集成的多栅类神经元晶体管

IF 13.4 2区材料科学

Nano Convergence Pub Date : 2025-01-18 DOI: 10.1186/s40580-024-00472-z

João Neto, Abhishek Singh Dahiya, Ravinder Dahiya

{"title":"Multi-gate neuron-like transistors based on ensembles of aligned nanowires on flexible substrates","authors":"João Neto, Abhishek Singh Dahiya, Ravinder Dahiya","doi":"10.1186/s40580-024-00472-z","DOIUrl":"10.1186/s40580-024-00472-z","url":null,"abstract":"<div><p>The intriguing way the receptors in biological skin encode the tactile data has inspired the development of electronic skins (e-skin) with brain-inspired or neuromorphic computing. Starting with local (near sensor) data processing, there is an inherent mechanism in play that helps to scale down the data. This is particularly attractive when one considers the huge data produced by large number of sensors expected in a large area e-skin such as the whole-body skin of a robot. This underlines the need for biological skin like processing in the e-skin. Herein, we present multi-gate field-effect transistors (<i>v</i>-FET) having capacitively coupled floating gate (FG) to mimic some of the neural functions. The <i>v</i>-FETs are obtained by deterministic assembly of ZnO nanowires on a flexible substrate using contactless dielectrophoresis method, followed metallization using conventional microfabrication steps. The spatial summation of two presynaptic inputs (applied at multiple control gates) of the transistor confirm their neuron-like response. The temporal summation (such as paired-pulse facilitation) by presented <i>v</i>-FETs further confirm their neuron-like mimicking with one presynaptic input. The temporal and spatial summation functions, demonstrated by the <i>v</i>-FET presented here, could open interesting new avenues for development of neuromorphic electronic skin (<i>v</i>-skin) with possibility of biological-skin like distributed computing.</p></div>","PeriodicalId":712,"journal":{"name":"Nano Convergence","volume":"12 1","pages":""},"PeriodicalIF":13.4,"publicationDate":"2025-01-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://nanoconvergencejournal.springeropen.com/counter/pdf/10.1186/s40580-024-00472-z","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142995416","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Tuning electronic structure and carrier transport properties through crystal orientation control in two-dimensional Dion-Jacobson phase perovskites 通过晶体取向控制二维Dion-Jacobson相钙钛矿的电子结构和载流子输运性质

IF 13.4 2区材料科学

Nano Convergence Pub Date : 2025-01-13 DOI: 10.1186/s40580-024-00473-y

Byunggeol Kim, Jeehong Park, Donghee Kang, Na Eun Jung, Kitae Kim, Hongsun Ryu, Joon Ik Jang, Soohyung Park, Yeonjin Yi

{"title":"Tuning electronic structure and carrier transport properties through crystal orientation control in two-dimensional Dion-Jacobson phase perovskites","authors":"Byunggeol Kim, Jeehong Park, Donghee Kang, Na Eun Jung, Kitae Kim, Hongsun Ryu, Joon Ik Jang, Soohyung Park, Yeonjin Yi","doi":"10.1186/s40580-024-00473-y","DOIUrl":"10.1186/s40580-024-00473-y","url":null,"abstract":"<div><p>Two-dimensional halide perovskites are attracting attention due to their structural diversity, improved stability, and enhanced quantum efficiency compared to their three-dimensional counterparts. In particular, Dion-Jacobson (DJ) phase perovskites exhibit superior structural stability compared to Ruddlesden-Popper phase perovskites. The inherent quantum well structure of layered perovskites leads to highly anisotropic charge transport and optical properties. Therefore, controlling the preferred crystal orientation (parallel or perpendicular) is crucial for optimizing device performance. This work presents a rational strategy to control parallel and perpendicular crystal growth in C<sub>6</sub>N<sub>2</sub>H<sub>16</sub>PbI<sub>4</sub> (4AMPPbI<sub>4</sub>)-based DJ phase perovskite thin films. We demonstrate that crystal orientation depends on crystal growth rates, which can be controlled by varying the solvent composition, antisolvent, and annealing temperature. Direct and inverse photoelectron spectroscopy reveals that the electronic structure of 4AMPPbI<sub>4</sub>, including its work function, ionization energy, and electron affinity, is orientation-dependent. Different orientations significantly affect carrier transport as confirmed by single-carrier devices. This study highlights the critical role of crystal orientation in DJ phase perovskites for designing high-performance optoelectronic devices.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":712,"journal":{"name":"Nano Convergence","volume":"12 1","pages":""},"PeriodicalIF":13.4,"publicationDate":"2025-01-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://nanoconvergencejournal.springeropen.com/counter/pdf/10.1186/s40580-024-00473-y","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142976500","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhanced performance of hafnia self-rectifying ferroelectric tunnel junctions at cryogenic temperatures 在低温下增强半铪自整流铁电隧道结的性能。

IF 13.4 2区材料科学

Nano Convergence Pub Date : 2024-12-16 DOI: 10.1186/s40580-024-00461-2

Junghyeon Hwang, Chaeheon Kim, Jinho Ahn, Sanghun Jeon

{"title":"Enhanced performance of hafnia self-rectifying ferroelectric tunnel junctions at cryogenic temperatures","authors":"Junghyeon Hwang, Chaeheon Kim, Jinho Ahn, Sanghun Jeon","doi":"10.1186/s40580-024-00461-2","DOIUrl":"10.1186/s40580-024-00461-2","url":null,"abstract":"<div><p>The advancement in high-performance computing technologies, including quantum and aerospace systems, necessitates components that operate efficiently at cryogenic temperatures. In this study, we demonstrate a hafnia-based ferroelectric tunnel junction (FTJ) that achieves a record-high tunneling electroresistance (TER) ratio of over 200,000 and decade-long retention characteristics. By introducing asymmetric oxygen vacancies through the strategic use of indium oxide (InO<sub>x</sub>) layer, we enhance the TER ratio without increasing off-current, addressing the longstanding issue of low on-current in hafnia-based FTJs. Unlike prior approaches that led to leakage currents, our method optimizes tunneling behavior by leveraging the differential oxygen dissociation energy between InO<sub>x</sub> and hafnium zirconium oxide (HZO). This results in asymmetric modulation of the tunnel barrier, enhancing electron tunneling in one polarization state while maintaining stability in the opposite state. Furthermore, we explore the intrinsic characteristics of the FTJ at cryogenic temperatures, where reduced thermal energy minimizes leakage currents and allows the maximization of device performance. These findings establish a new benchmark for TER in hafnia-based FTJs and provide valuable insights for the integration of these devices into advanced cryogenic memory systems.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":712,"journal":{"name":"Nano Convergence","volume":"11 1","pages":""},"PeriodicalIF":13.4,"publicationDate":"2024-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://nanoconvergencejournal.springeropen.com/counter/pdf/10.1186/s40580-024-00461-2","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142833387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Engineering of buried interfaces in perovskites: advancing sustainable photovoltaics 过氧化物中的埋藏界面工程：推动可持续光伏技术的发展。

IF 13.4 2区材料科学

Nano Convergence Pub Date : 2024-12-16 DOI: 10.1186/s40580-024-00464-z

Jihyun Kim, William Jo

{"title":"Engineering of buried interfaces in perovskites: advancing sustainable photovoltaics","authors":"Jihyun Kim, William Jo","doi":"10.1186/s40580-024-00464-z","DOIUrl":"10.1186/s40580-024-00464-z","url":null,"abstract":"<div><p>Perovskite solar cells (PSCs) have garnered significant attention for their high power conversion efficiency (PCE) and potential for cost-effective, large-scale manufacturing. This comprehensive review focuses on the role of buried interface engineering in enhancing the performance and stability of PSCs with both n-type electron transport layer/perovskite/p-type hole transport layer (n-i-p) and p-type hole transport layer/perovskite/n-type electron transport layer (p-i-n) structures. This study highlights key challenges associated with interface engineering, such as charge extraction, recombination loss, and energy level alignment. Various interface engineering techniques, such as surface passivation, self-assembled monolayers, and additive engineering, are explored in terms of their effectiveness in mitigating recombination loss and improving long-term device stability. This review also provides an in-depth analysis of material selection for the electron and hole transport layers, defect management techniques, and the influence of these on perovskite film quality and device stability. Advanced characterization methods for buried interfaces are discussed, providing insights into the structural, morphological, and electronic properties that govern device performance. Furthermore, we explore emerging approaches that target homogenous cation distribution and phase stability at buried interfaces, both of which are crucial for improving PCEs beyond current benchmarks. By synthesizing the latest research findings and identifying key challenges, this review aims to guide future directions in interface engineering for PSCs and ensure their successful use in next-generation sustainable energy technologies.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":712,"journal":{"name":"Nano Convergence","volume":"11 1","pages":""},"PeriodicalIF":13.4,"publicationDate":"2024-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://nanoconvergencejournal.springeropen.com/counter/pdf/10.1186/s40580-024-00464-z","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142833386","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0