Nano Convergence最新文献

{"title":"Assessment of CuFeSe2 ternary nanozymes for multimodal triple negative breast cancer theranostics","authors":"Chunmei Yang,&nbsp;Lihong Li,&nbsp;Mingdong Li,&nbsp;Yue Shu,&nbsp;Yiping Luo,&nbsp;Didi Gu,&nbsp;Xin Zhu,&nbsp;Jing Chen,&nbsp;Lu Yang,&nbsp;Jian Shu","doi":"10.1186/s40580-025-00483-4","DOIUrl":"10.1186/s40580-025-00483-4","url":null,"abstract":"<div><p>Triple negative breast cancer (TNBC) remains a challenge for clinical diagnosis and therapy due to its poor prognosis and high mortality rate. Hence, new methods to achieve TNBC imaging and imaging-guided TNBC therapy are urgently needed. Currently, the combination of chemotherapy with phototherapy/catalytic therapy has become a promising strategy for cancer treatment. Here, multifunctional CuFeSe₂ ternary nanozymes (CuFeSe₂-AMD3100-Gem nanosheets) were prepared as high-performance nanotheranostic agents for imaging-guided synergistic therapy of TNBC in vitro and in vivo. CuFeSe₂-AMD3100-Gem nanosheets not only exhibited outstanding CXCR4-targeted capability and superior photothermal properties, but also produced exact chemical cytotoxicity through the loading of the chemotherapy drug Gemcitabine. Specifically, the CuFeSe₂-AMD3100-Gem nanosheets simultaneously possessed peroxidase-like activities capable of converting endogenous H₂O₂ to hydroxyl radicals (•OH), which could be significantly enhanced under light irradiation. Furthermore, these nanosheets showed remarkable multimodal imaging ability for magnetic resonance imaging (MRI), computed tomography (CT) and infrared thermography in TNBC tumor-bearing mice (4T1 cells). More importantly, the in vitro and in vivo results verified the significant synergistic anticancer effect of the CuFeSe₂-AMD3100-Gem nanosheets by combining photothermal therapy and enzyme catalytic therapy with chemotherapy. In conclusion, these advantages demonstrate the powerful potential of CuFeSe₂ ternary nanozymes for imaging-guided synergistic photothermal/catalytic/chemical therapy for TNBC.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":712,"journal":{"name":"Nano Convergence","volume":"12 1","pages":""},"PeriodicalIF":13.4,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://nanoconvergencejournal.springeropen.com/counter/pdf/10.1186/s40580-025-00483-4","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143761752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Defect passivation of hafnium oxide ferroelectric tunnel junction using forming gas annealing for neuromorphic applications","authors":"Manh-Cuong Nguyen,&nbsp;Kyung Kyu Min,&nbsp;Wonjun Shin,&nbsp;Jiyong Yim,&nbsp;Rino Choi,&nbsp;Daewoong Kwon","doi":"10.1186/s40580-025-00481-6","DOIUrl":"10.1186/s40580-025-00481-6","url":null,"abstract":"<div><p>Forming gas annealing (FGA) is applied to HfO_x ferroelectric tunnel junction (FTJ) synaptic devices to passivate defects and reduce trap-assisted-tunneling (TAT). Without FGA, TAT caused by defects in metal–ferroelectric–insulator–semiconductor (MFIS) FTJ stack dominates the conduction mechanism in FTJs and results in no memory window (MW). The reduction of defects or TAT after FGA reveals the effect of polarization switching on the FTJ performance. Consequently, linear/symmetric potentiation and depression (P/D) characteristics of FTJ after FGA with stable repeatability are obtained. Owing to the FGA-induced linearity and symmetricity of P/D, a learning accuracy of approximately 90% is achieved via pattern recognition simulations utilizing HfO_x FTJ crossbar.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":712,"journal":{"name":"Nano Convergence","volume":"12 1","pages":""},"PeriodicalIF":13.4,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://nanoconvergencejournal.springeropen.com/counter/pdf/10.1186/s40580-025-00481-6","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143688272","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Microinjection molded microwell array-based portable digital PCR system for the detection of infectious respiratory viruses","authors":"Ji Wook Choi,&nbsp;Daekyeong Jung,&nbsp;Yoo Min Park,&nbsp;Nam Ho Bae,&nbsp;Seok Jae Lee,&nbsp;Donggee Rho,&nbsp;Bong Geun Chung,&nbsp;Kyoung G. Lee","doi":"10.1186/s40580-025-00482-5","DOIUrl":"10.1186/s40580-025-00482-5","url":null,"abstract":"<div><p>In molecular diagnostics, the digital polymerase chain reaction (dPCR) has been considered a promising point-of-care testing (POCT) method for the rapid and accurate analysis of respiratory infections. To improve its practical applicability, it is necessary to develop a mass-producible and reproducible dPCR system for nucleic acid partitioning; additionally, the system must provide a customized portable analysis. In this study, we report an advanced mass-production method for the fabrication of microwell array-based dPCR chips suitable for nucleic acid partitioning and a compact fluorescence signal analysis dPCR system. Based on metal mold fabrication, different microwell sizes with diameters in the 100–200 μm range and pitches in the 200–400 μm range are designed and successfully fabricated using photolithography, metal electroplating, and injection molding techniques. Additionally, a battery-operated dPCR system utilizing digitalized fluorescence signal analysis is developed for on-site detection. To verify the chip and system applicability, the infectious human coronavirus is analyzed using different nucleic acid concentrations. By evaluating the performance of the dPCR chips and system, accurate and quantitative virus analysis results are obtained, verifying the portability, easy use, and reproducibility of the chips and system. Furthermore, the detection results obtained using the fabricated chips and the developed system are similar to the results obtained using commercially available systems, verifying that the proposed dPCR chips and system exhibit sensitivity, accuracy, reliability, and reproducibility in the quantitative molecular analysis of infectious diseases.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":712,"journal":{"name":"Nano Convergence","volume":"12 1","pages":""},"PeriodicalIF":13.4,"publicationDate":"2025-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://nanoconvergencejournal.springeropen.com/counter/pdf/10.1186/s40580-025-00482-5","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143668171","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of La and Si additives in Zr-doped HfO2 capacitors for pseudo-linear high-κ dielectric applications","authors":"Minjong Lee,&nbsp;Yong Chan Jung,&nbsp;Jin-Hyun Kim,&nbsp;Dushyant M. Narayan,&nbsp;Sehun Kang,&nbsp;Woo Young Park,&nbsp;Kivin Im,&nbsp;Jiyoung Kim","doi":"10.1186/s40580-025-00477-2","DOIUrl":"10.1186/s40580-025-00477-2","url":null,"abstract":"<div><p>This study investigates the impact of dopants on Hf_1–xZr_xO₂-based capacitors for high-performance, hysteresis-free dielectric applications. Control of the crystalline structure of Hf_1–xZr_xO₂ films is crucial for achieving superior dielectric properties. The tetragonal (t) phase of Hf_1–xZr_xO₂ exhibits anti-ferroelectric (AFE) characteristics and shows promise due to its high dielectric constant (κ). However, hysteresis behavior in polarization–voltage sweeps due to AFE behavior presents a significant challenge, primarily due to the high energy loss when implemented in dynamic random-access-memory (DRAM) applications. To achieve hysteresis-free operation, this study focuses on suppressing AFE switching within the DRAM voltage range through Si or La doping in Hf_1–xZr_xO₂ films. Introducing small amounts of Si or La (&lt; 1%) into Hf_1–xZr_xO₂ capacitors effectively diminishes AFE switching by influencing which structural phases are favored: Si doping tends to favor the amorphous phase, while La doping promotes the formation of the t-phase. La doping shows particular promise in enhancing pseudo-linear dielectric performance. ~ 0.9% La-doped Hf_0.25Zr_0.75O₂ capacitors exhibit a markedly improved equivalent oxide thickness (EOT) of ~ 4.8 Å and a reduced leakage current density (J_leak) of ~ 10^–7 A/cm² at 1 V, achieved at back-end-of-line (BEOL) compatible temperatures (&lt; 400 °C). These results demonstrate a promising strategy for advancing energy-efficient high-κ dielectric materials in next-generation memory devices, offering a balanced combination of high capacitance, low leakage current, and BEOL compatibility.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":712,"journal":{"name":"Nano Convergence","volume":"12 1","pages":""},"PeriodicalIF":13.4,"publicationDate":"2025-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://nanoconvergencejournal.springeropen.com/counter/pdf/10.1186/s40580-025-00477-2","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143564396","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electronic threshold switching of As-embedded SiO2 selectors: charged oxygen vacancy model","authors":"Hye Rim Kim,&nbsp;Tae Jun Seok,&nbsp;Tae Jung Ha,&nbsp;Jeong Hwan Song,&nbsp;Kyun Seong Dae,&nbsp;Sang Gil Lee,&nbsp;Hyun Seung Choi,&nbsp;Su Yong Park,&nbsp;Byung Joon Choi,&nbsp;Jae Hyuck Jang,&nbsp;Soo Gil Kim,&nbsp;Tae Joo Park","doi":"10.1186/s40580-025-00480-7","DOIUrl":"10.1186/s40580-025-00480-7","url":null,"abstract":"<div><p>Sneak current issues in crossbar arrays of non-volatile memories can be effectively alleviated using threshold switching (TS)-based selectors. However, 1-selector–1-resistor integration requires coherence between the constituent materials and operational parameters of the two components. Here, we propose a highly coherent selector via in-depth investigation of the operation process of a fab-friendly As-SiO₂ selector unit. The structural and electrical characteristics of an As-embedded SiO₂ selector are analyzed, and the TS-on and -off operational mechanism is presented. Further, the critical control elements governing the selector operation are identified, including the electron charging into the oxygen vacancies in the SiO₂ matrix and energy band alignment between the As cluster and charged oxygen vacancies in SiO₂. Consequently, practical control strategies for the TS behavior are proposed with a pulse scheme applicable to actual device operation. The proposed TS operational mechanism and analytical methodology can contribute to interpreting and integrating various memory/selector components, thereby advancing their operational and integrative research.</p><h3>Graphical abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":712,"journal":{"name":"Nano Convergence","volume":"12 1","pages":""},"PeriodicalIF":13.4,"publicationDate":"2025-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://nanoconvergencejournal.springeropen.com/counter/pdf/10.1186/s40580-025-00480-7","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143553799","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Correction: Persistent ferromagnetic ground state in pristine and Ni-doped Fe3GaTe2 flakes","authors":"Ki-Hoon Son,&nbsp;Sehoon Oh,&nbsp;Junho Lee,&nbsp;Sobin Yun,&nbsp;Yunseo Shin,&nbsp;Shaohua Yan,&nbsp;Chaun Jang,&nbsp;Hong-Sub Lee,&nbsp;Hechang Lei,&nbsp;Se Young Park,&nbsp;Hyejin Ryu","doi":"10.1186/s40580-024-00471-0","DOIUrl":"10.1186/s40580-024-00471-0","url":null,"abstract":"","PeriodicalId":712,"journal":{"name":"Nano Convergence","volume":"12 1","pages":""},"PeriodicalIF":13.4,"publicationDate":"2025-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://nanoconvergencejournal.springeropen.com/counter/pdf/10.1186/s40580-024-00471-0","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143489407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Trapped-ion based nanoscale quantum sensing","authors":"Jieun Yoo,&nbsp;Hyunsoo Kim,&nbsp;Hyerin Kim,&nbsp;Yeongseo Kim,&nbsp;Taeyoung Choi","doi":"10.1186/s40580-025-00479-0","DOIUrl":"10.1186/s40580-025-00479-0","url":null,"abstract":"<div><p>Recent development of controlling quantum systems has enabled us to utilize the systems for quantum computing, communication, and sensing. In particular, quantum sensing has attracted attention to a broad community of science and technology, as it could surpass classical limitations in measuring physical quantities such as electric and magnetic field with unprecedented precision. Among various physical platforms for quantum sensing, trapped-ion based system possesses several advantages—atomic size, outstanding quantum coherence, and quantum properties. In this review, we introduce previous research efforts to utilize the trapped-ion system for reaching ultimate sensitivity and discuss future perspective and research directions in this emerging field.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":712,"journal":{"name":"Nano Convergence","volume":"12 1","pages":""},"PeriodicalIF":13.4,"publicationDate":"2025-02-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://nanoconvergencejournal.springeropen.com/counter/pdf/10.1186/s40580-025-00479-0","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143465987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Recent advances in CMOS-compatible synthesis and integration of 2D materials","authors":"Ajit Kumar Katiyar,&nbsp;Jonggyu Choi,&nbsp;Jong-Hyun Ahn","doi":"10.1186/s40580-025-00478-1","DOIUrl":"10.1186/s40580-025-00478-1","url":null,"abstract":"<div><p>The upcoming generation of functional electronics in the era of artificial intelligence, and IoT requires extensive data storage and processing, necessitating further device miniaturization. Conventional Si CMOS technology is struggling to enhance integration density beyond a certain limit to uphold Moore’s law, primarily due to performance degradation at smaller dimensions caused by various physical effects, including surface scattering, quantum tunneling, and other short-channel effects. The two-dimensional materials have emerged as highly promising alternatives, which exhibit excellent electrical and mechanical properties at atomically thin thicknesses and show exceptional potential for future CMOS technology. This review article presents the chronological progress made in the development of two-dimensional materials-based CMOS devices with comprehensively discussing the advancements made in material production, device development, associated challenges, and the strategies to address these issues. The future prospects for the use of two-dimensional materials in functional CMOS circuitry are outlooked, highlighting key opportunities and challenges toward industrial adaptation.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":712,"journal":{"name":"Nano Convergence","volume":"12 1","pages":""},"PeriodicalIF":13.4,"publicationDate":"2025-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://nanoconvergencejournal.springeropen.com/counter/pdf/10.1186/s40580-025-00478-1","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143423165","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Freestanding VO2 membranes on epidermal nanomesh for ultra-sensitive correlated breathable sensors","authors":"Dongha Kim,&nbsp;Dongju Lee,&nbsp;Jiseok Park,&nbsp;Jihoon Bae,&nbsp;Aiping Chen,&nbsp;Judith L. MacManus-Driscoll,&nbsp;Sungwon Lee,&nbsp;Shinbuhm Lee","doi":"10.1186/s40580-025-00476-3","DOIUrl":"10.1186/s40580-025-00476-3","url":null,"abstract":"<div><p>The interest in highly sensitive sensors is rapidly increasing for detecting very tiny signals for Internet of Things devices. Here, we achieve ultra-sensitive correlated breathable sensors based on freestanding VO₂ membranes. We fabricate the membranes by growing VO₂ films onto sacrificial Sr₃Al₂O₆ layer grown on SrTiO₃, selectively dissolving the Sr₃Al₂O₆ in water, and then rendering freestanding VO₂ membrane on nanomesh. The nanomeshes are extremely flexible, sweat permeable, and readily skin-adhesive. The resistance of the VO₂ membranes is reversibly tuned by human’s tiny mechanical stimuli and breath stimuli. The stimuli modulate the Peierls dimerization of one-dimensional V−V chains in the VO₂ lattice which concomitantly controls the electron correlation and hence resistivity. Since our breathable sensors operate based on quantum-mechanical correlation effects, their sensitivity is 1−2 orders of magnitude higher than conventional tactile and respiratory sensors based on other materials. Thus, the freestanding membranes of correlated oxides on epidermal nanomeshes are multifunctional platforms for developing ultra-sensitive correlated breathable sensors.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":712,"journal":{"name":"Nano Convergence","volume":"12 1","pages":""},"PeriodicalIF":13.4,"publicationDate":"2025-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://nanoconvergencejournal.springeropen.com/counter/pdf/10.1186/s40580-025-00476-3","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143361907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Current status of developed electrocatalysts for water splitting technologies: from experimental to industrial perspective","authors":"Duy Thanh Tran,&nbsp;Phan Khanh Linh Tran,&nbsp;Deepanshu Malhotra,&nbsp;Thanh Hai Nguyen,&nbsp;Tran Thien An Nguyen,&nbsp;Nguyen Tram Anh Duong,&nbsp;Nam Hoon Kim,&nbsp;Joong Hee Lee","doi":"10.1186/s40580-024-00468-9","DOIUrl":"10.1186/s40580-024-00468-9","url":null,"abstract":"<p>The conversion of electricity into hydrogen (H₂) gas through electrochemical water splitting using efficient electrocatalysts has been one of the most important future technologies to create vast amounts of clean and renewable energy. Low-temperature electrolyzer systems, such as proton exchange membrane water electrolyzers, alkaline water electrolyzers, and anion exchange membrane water electrolyzers are at the forefront of current technologies. Their performance, however, generally depends on electricity costs and system efficiency, which can be significantly improved by developing high-performance electrocatalysts to enhance the kinetics of both the cathodic hydrogen evolution reaction and the anodic oxygen evolution reaction. Despite numerous active research efforts in catalyst development, the performance of water electrolysis remains insufficient for commercialization. Ongoing research into innovative electrocatalysts and an understanding of the catalytic mechanisms are critical to enhancing their activity and stability for electrolyzers. This is still a focus at academic institutes/universities and industrial R&amp;D centers. Herein, we provide an overview of the current state and future directions of electrocatalysts and water electrolyzers for electrochemical H₂ production. Additionally, we describe in detail the technological framework of electrocatalysts and water electrolyzers for H₂ production as utilized by relevant global companies.</p>","PeriodicalId":712,"journal":{"name":"Nano Convergence","volume":"12 1","pages":""},"PeriodicalIF":13.4,"publicationDate":"2025-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://nanoconvergencejournal.springeropen.com/counter/pdf/10.1186/s40580-024-00468-9","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143361892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}