发布求助
文献互助 智能选刊 最新文献

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)最新文献

筛选
英文 中文
Impact of BEOL Design on Self-heating and Reliability in Highly-scaled FinFETs BEOL设计对大尺度finfet自热及可靠性的影响
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2019-09-01 DOI: 10.1109/SISPAD.2019.8870479
Jaehee Choi, U. Monga, Yonghee Park, H. Shim, U. Kwon, S. Pae, D. Kim
{"title":"Impact of BEOL Design on Self-heating and Reliability in Highly-scaled FinFETs","authors":"Jaehee Choi, U. Monga, Yonghee Park, H. Shim, U. Kwon, S. Pae, D. Kim","doi":"10.1109/SISPAD.2019.8870479","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870479","url":null,"abstract":"This paper investigates the impact of BEOL design on device and backend reliability – HCI, BTI, EM – due to dependence of self-heating on BEOL in highly-scaled FinFETs. Our analysis indicates that due to poor thermal coupling to substrate – in the thin fin body devices – a large part of heat flows out of BEOL. This makes self-heating, and thus device (FEOL) temperature, very sensitive to BEOL design. The heat flow through BEOL also significantly increases the metal and via temperatures. The increased temperature negatively affects the overall reliability, and one of the ways to mitigate device degradation is optimization of BEOL design.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"13 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83717821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Investigation of TCAD Calibration for Saturation and Tail Current of 6.5kV IGBTs 6.5kV igbt饱和电流和尾电流的TCAD标定研究
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2019-09-01 DOI: 10.1109/SISPAD.2019.8870514
T. Suwa, S. Hayase
{"title":"Investigation of TCAD Calibration for Saturation and Tail Current of 6.5kV IGBTs","authors":"T. Suwa, S. Hayase","doi":"10.1109/SISPAD.2019.8870514","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870514","url":null,"abstract":"In this work we focus on two calibration methods to clarify a key point of TCAD calibration for turn-off waveforms and IV characteristics including the saturation currents of IGBTs at the same time. Simulated results with the method based on adjustments of the surface N+ and P+ depth ratio reproduce measured results of all calibration targets reasonably in terms of time and accuracy. On the other hand, simulated results by mainly calibrating parameters of the velocity saturation model for saturation currents hardly reproduce all calibration targets simultaneously. We explain the reason using the roughly approximated criteria of the dynamic punch-through oscillation and dynamic avalanche. We also analyze the temperature dependence of the tail current briefly which is one of the important design items of IGBTs.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"56 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89048488","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Atomistic Modeling Of Nanoscale Ferroelectric Capacitors Using a Density Functional Theory And Non-Equilibrium Green’s-Function Method 基于密度泛函理论和非平衡格林函数方法的纳米铁电电容器原子建模
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2019-09-01 DOI: 10.1109/SISPAD.2019.8870397
D. Stradi, U. G. Vej-Hansen, P. Khomyakov, Maeng-Eun Lee, G. Penazzi, A. Blom, J. Wellendorff, S. Smidstrup, K. Stokbro
{"title":"Atomistic Modeling Of Nanoscale Ferroelectric Capacitors Using a Density Functional Theory And Non-Equilibrium Green’s-Function Method","authors":"D. Stradi, U. G. Vej-Hansen, P. Khomyakov, Maeng-Eun Lee, G. Penazzi, A. Blom, J. Wellendorff, S. Smidstrup, K. Stokbro","doi":"10.1109/SISPAD.2019.8870397","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870397","url":null,"abstract":"We propose a first-principles atomistic method based on density functional theory and the non-equilibrium Green’s-function method to investigate the electronic and structural response of metal-insulator-metal capacitors under applied bias voltages. We validate our method by showing its usefulness in two paradigmatic cases where including finite-bias structural relaxation effects is critical to describe the device behavior: formation of dielectric dead layers in a paraelectric SRO|STO|SRO capacitor due to an applied bias voltage, and the switching behavior of a ferroelectric SRO|BTO|SRO capacitor due to an external electric field.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"7 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82053051","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
TCAD analysis of FinFET temperature-dependent variability for analog applications 模拟应用中FinFET温度相关变异性的TCAD分析
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2019-09-01 DOI: 10.1109/SISPAD.2019.8870492
S. Guerrieri, F. Bonani, G. Ghione
{"title":"TCAD analysis of FinFET temperature-dependent variability for analog applications","authors":"S. Guerrieri, F. Bonani, G. Ghione","doi":"10.1109/SISPAD.2019.8870492","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870492","url":null,"abstract":"The Green’s Function based TCAD device variability analysis is extended to allow for temperature-dependent variability, with negligible overhead in terms of simulation time with respect to fixed temperature simulations. We provide temperature and bias-dependent 3D variability analysis of the DC current for a FinFET structure from the 22 nm node, showing how to predict and mitigate the effects of poor thermal management. Based on the quasi-stationary assumption, preliminary analysis of self-heating effects of a FinFET medium power amplifier is also presented.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"95 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76658459","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
OFF Current Suppression by Gate-gontrolled Strain in The N-type GaAs Piezoelectric FinFETs 栅极控制应变抑制n型GaAs压电finfet中的关断电流
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2019-09-01 DOI: 10.1109/sispad.2019.8870452
Y. Long, Jun Z. Huang, Zhongming Wei, Jun-Wei Luo, Xiangwei Jiang
{"title":"OFF Current Suppression by Gate-gontrolled Strain in The N-type GaAs Piezoelectric FinFETs","authors":"Y. Long, Jun Z. Huang, Zhongming Wei, Jun-Wei Luo, Xiangwei Jiang","doi":"10.1109/sispad.2019.8870452","DOIUrl":"https://doi.org/10.1109/sispad.2019.8870452","url":null,"abstract":"The gate-controlled compressive strain induced by piezoelectric layers (piezo-layers) is used to suppress the OFF current of n-type GaAs piezoelectric FinFETs (Piezo-FinFETs). Quantum ballistic transport of n-type GaAs Piezo-FinFETs is modeled by the self-consistent Schrödinger–Poisson system. Our results suggest that n-type GaAs Piezo-FinFETs reduce OFF current by an order of magnitude for both high performance and low power applications compared with their counterparts without piezo-layers. The influences of device orientations on device performance is also investigated. The optimal device orientation of n-type GaAs Piezo-FinFETs is on the crystal surface (111).","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"38 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87460490","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Theoretical Study of the Edge Effect of Dumbbellshape Graphene Nanoribbon with a Dual Electronic Properties by First-principle Calculations 基于第一性原理计算的双电子性质哑铃形石墨烯纳米带边缘效应的理论研究
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2019-09-01 DOI: 10.1109/SISPAD.2019.8870398
Qinqiang Zhang, T. Kudo, Jowesh Gounder, Ying Chen, Ken Suzuki, H. Miura
{"title":"Theoretical Study of the Edge Effect of Dumbbellshape Graphene Nanoribbon with a Dual Electronic Properties by First-principle Calculations","authors":"Qinqiang Zhang, T. Kudo, Jowesh Gounder, Ying Chen, Ken Suzuki, H. Miura","doi":"10.1109/SISPAD.2019.8870398","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870398","url":null,"abstract":"The electronic band structure (band gap) and electronic transmission properties of dumbbell-shape graphene nanoribbons (DS-GNRs), which consists of a thinner semiconductive GNR and two wider metallic GNRs at its both ends, was theoretically investigated using first-principles calculation to clarify the dominant controlling factors of their electronic performance for their applications to various smart sensors. The electronic properties of the DS-GNR was found to vary drastically depending on the combination of the total number of carbon atoms along the width direction of each portion, the length of the semiconductive portion, the width of the metallic portion, and so on.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"46 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91286777","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Modeling of Temperature-Dependent MOSFET Aging 温度相关MOSFET老化的建模
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2019-09-01 DOI: 10.1109/SISPAD.2019.8870469
F. A. Herrera, M. Miura-Mattausch, H. Kikuchihara, T. Iizuka, H. Mattausch, H. Takatsuka
{"title":"Modeling of Temperature-Dependent MOSFET Aging","authors":"F. A. Herrera, M. Miura-Mattausch, H. Kikuchihara, T. Iizuka, H. Mattausch, H. Takatsuka","doi":"10.1109/SISPAD.2019.8870469","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870469","url":null,"abstract":"We have modeled MOSFET-device aging based on the trap-density increase, which is included in the Poisson equation to consider aging explicitly and physically correct. To preserve consistency, the Poisson equation is solved iteratively. Measured temperature dependence of aged I-V characteristics are well reproduced with implementation of this aging model into the industry-standard model HiSIM. The extracted physical device quantities with the developed model from measurements have been investigated to characterize the aging features. It is observed that the activation energy Ea as a function of Vgs is nearly identical for non-aged and aged devices. This concludes that the temperature dependence of aging originates mostly from the temperature-dependent electrostatic potential, resulting in negligible temperature dependency of extracted trap density Ntrap. To generalize the conclusion, 2D-device simulation is investigated for a double-gate (DG) MOSFET with increased stress-induced trap density. The same results as obtained from measurements are achieved, namely the activation energy is nearly identical for either non-aged or aged cases. This concludes that the temperature dependence of device aging can be accurately predicted using the temperature-dependent I-V characteristics of non-aged device.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"27 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81333621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
TCAD Simulations Combined with Free Carrier Absorption Experiments Revealing the Physical Nature of Hydrogen-Related Donors in IGBTs TCAD模拟结合自由载流子吸收实验揭示了igbt中氢相关供体的物理性质
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2019-09-01 DOI: 10.1109/SISPAD.2019.8870353
A. Korzenietz, F. Hille, F. Niedernostheide, C. Sandow, G. Wachutka, G. Schrag
{"title":"TCAD Simulations Combined with Free Carrier Absorption Experiments Revealing the Physical Nature of Hydrogen-Related Donors in IGBTs","authors":"A. Korzenietz, F. Hille, F. Niedernostheide, C. Sandow, G. Wachutka, G. Schrag","doi":"10.1109/SISPAD.2019.8870353","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870353","url":null,"abstract":"Hydrogen-related donors can be advantageously used in IGBTs and power diodes with a view to creating field-stop layers and to optimising the electrical performance. In this work, the influence of hydrogen-related donors on the on-state plasma profile in field-stop IGBTs is analysed by means of free-carrier absorption measurements. For these investigations, dedicated IGBT test structures were used, which had been adapted to the specific properties of the employed measurement set-up. Two different hydrogen-related donor profiles were implanted into these IGBT samples and, subsequently, measurements with different current densities were compared to 2D TCAD numerical simulations. In the next step, the simulation models were adjusted, with respect to carrier lifetime and mobility to reflect the impact of a possible variation of these properties.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"199 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80062168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Full band quantum transport modelling with EP and NEGF methods; application to nanowire transistors 基于EP和NEGF方法的全带量子输运建模纳米线晶体管的应用
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2019-09-01 DOI: 10.1109/SISPAD.2019.8870406
M. Pala, D. Esseni
{"title":"Full band quantum transport modelling with EP and NEGF methods; application to nanowire transistors","authors":"M. Pala, D. Esseni","doi":"10.1109/SISPAD.2019.8870406","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870406","url":null,"abstract":"The active region of many modern electron devices consists of semiconductors structured at truly nanometric dimensions, either as ultra-thin-body FETs (UTRFETs), or as 3D architectures such as Fin-FETs, multi-gate FETs (MuGFETs), and nanowire (NW) FETs [1]. Quantum mechanical effects have thus become prominent not only in terms of subband splitting [2], but also in terms of source-drain tunnnelling in CMOS FEFs [3], [4], [5], and band-to-band-tunnnelling (BTBT) in Tunnel FETs (TFETs) [6], [7]. The relevance of quantum effects in nanoscale FETs is also witnessed by the fact hat CMOS based quantum dots have been proposed as a platform for quantum computing [8].","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"2 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88268961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
SISPAD 2019 Welcome Page SISPAD 2019欢迎页面
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2019-09-01 DOI: 10.1109/sispad.2019.8870376
{"title":"SISPAD 2019 Welcome Page","authors":"","doi":"10.1109/sispad.2019.8870376","DOIUrl":"https://doi.org/10.1109/sispad.2019.8870376","url":null,"abstract":"","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"15 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78704962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信