OFF Current Suppression by Gate-gontrolled Strain in The N-type GaAs Piezoelectric FinFETs

Abstract

The gate-controlled compressive strain induced by piezoelectric layers (piezo-layers) is used to suppress the OFF current of n-type GaAs piezoelectric FinFETs (Piezo-FinFETs). Quantum ballistic transport of n-type GaAs Piezo-FinFETs is modeled by the self-consistent Schrödinger–Poisson system. Our results suggest that n-type GaAs Piezo-FinFETs reduce OFF current by an order of magnitude for both high performance and low power applications compared with their counterparts without piezo-layers. The influences of device orientations on device performance is also investigated. The optimal device orientation of n-type GaAs Piezo-FinFETs is on the crystal surface (111).