栅极控制应变抑制n型GaAs压电finfet中的关断电流

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2019-09-01 DOI:10.1109/sispad.2019.8870452

Y. Long, Jun Z. Huang, Zhongming Wei, Jun-Wei Luo, Xiangwei Jiang

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引用次数: 0

摘要

利用压电层(piezoo -layers)引起的栅控压缩应变来抑制n型GaAs压电finfet (piezoo - finfet)的关断电流。采用自一致Schrödinger-Poisson系统对n型GaAs压电finet的量子弹道输运进行了建模。我们的研究结果表明，与没有压电层的同类产品相比，n型GaAs压电finet在高性能和低功耗应用中降低了一个数量级的OFF电流。研究了器件方向对器件性能的影响。n型GaAs压电finet的最佳器件取向是在晶体表面(111)。

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OFF Current Suppression by Gate-gontrolled Strain in The N-type GaAs Piezoelectric FinFETs

The gate-controlled compressive strain induced by piezoelectric layers (piezo-layers) is used to suppress the OFF current of n-type GaAs piezoelectric FinFETs (Piezo-FinFETs). Quantum ballistic transport of n-type GaAs Piezo-FinFETs is modeled by the self-consistent Schrödinger–Poisson system. Our results suggest that n-type GaAs Piezo-FinFETs reduce OFF current by an order of magnitude for both high performance and low power applications compared with their counterparts without piezo-layers. The influences of device orientations on device performance is also investigated. The optimal device orientation of n-type GaAs Piezo-FinFETs is on the crystal surface (111).

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2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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