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2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)最新文献

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Simulation of Statistical NBTI Degradation in 10nm Doped Channel pFinFETs 10nm掺杂通道pfinfet中NBTI统计降解的模拟
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2019-09-01 DOI: 10.1109/SISPAD.2019.8870552
F. Adamu-Lema, V. Georgiev, A. Asenov
{"title":"Simulation of Statistical NBTI Degradation in 10nm Doped Channel pFinFETs","authors":"F. Adamu-Lema, V. Georgiev, A. Asenov","doi":"10.1109/SISPAD.2019.8870552","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870552","url":null,"abstract":"In this paper, by means of simulations, we have studied the impact of Negative Bias Temperature Instability (NBTI) in bulk silicon FinFETs suitable to the 10nm CMOS technology generation. Different levels of channel doping are considered in controlling the threshold voltage and the leakage of the FinFETs for SoC applications. The interplay between the initial statistical variability introduced by random discrete dopants, line edge roughness and metal gate granularity and the statistical variability introduced by different level of trapped charges resulting from NBTI degradation is studied in details. Results related to the time dependent variability and the correlation of key transistor figures of merit are also presented.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"31 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86863189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A model of the interface charge and chemical noise due to surface reactions in Ion Sensitive FETs 离子敏感场效应管中表面反应引起的界面电荷和化学噪声模型
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2019-09-01 DOI: 10.1109/SISPAD.2019.8870563
Leandro Julian Mele, P. Palestri, L. Selmi
{"title":"A model of the interface charge and chemical noise due to surface reactions in Ion Sensitive FETs","authors":"Leandro Julian Mele, P. Palestri, L. Selmi","doi":"10.1109/SISPAD.2019.8870563","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870563","url":null,"abstract":"We present a model of arbitrary chemical reactions at the interface between a solid and an electrolyte, aimed at computing the interface charge build-up and surface potential shift of ion-sensitive FETs in the presence of interfering ions. An expression for the rms value of the surface charge fluctuation and the resulting uncertainty in the ion concentration is derived as well. Application to nanoelectronic ISFET-based sensors for ions and proteins is demonstrated.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"1 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76388211","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
TCAD Framework to Estimate the NBTI Degradation in FinFET and GAA NSFET Under Mechanical Strain 机械应变下FinFET和GAA NSFET中NBTI退化的TCAD框架
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2019-09-01 DOI: 10.1109/SISPAD.2019.8870523
R. Tiwari, N. Parihar, Karansingh Thakor, H. Wong, S. Mahapatra
{"title":"TCAD Framework to Estimate the NBTI Degradation in FinFET and GAA NSFET Under Mechanical Strain","authors":"R. Tiwari, N. Parihar, Karansingh Thakor, H. Wong, S. Mahapatra","doi":"10.1109/SISPAD.2019.8870523","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870523","url":null,"abstract":"A physics-based TCAD framework is used to estimate the interface trap generation (ΔNIT) during Negative Bias Temperature Instability (NBTI) stress in P-channel FinFET and Gate All Around (GAA) Nano-Sheet (NS) FET. The impact of mechanical strain due to channel length scaling (LCH) on ΔNIT generation is estimated. The bandstructure calculations are used to explain the impact of mechanical strain on ΔNIT generation.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"4 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88831289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Precise Transient Mechanism of Steep Subthreshold Slope PN-Body-Tied SOI-FET and Proposal of a New Structure for Reducing Leakage Current upon Turn-off 陡坡次阈值pn体系soi场效应管的精确瞬态机理及关断时减小漏电流的新结构
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2019-09-01 DOI: 10.1109/SISPAD.2019.8870519
Takayuki Mori, J. Ida, Hiroki Endo, Y. Arai
{"title":"Precise Transient Mechanism of Steep Subthreshold Slope PN-Body-Tied SOI-FET and Proposal of a New Structure for Reducing Leakage Current upon Turn-off","authors":"Takayuki Mori, J. Ida, Hiroki Endo, Y. Arai","doi":"10.1109/SISPAD.2019.8870519","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870519","url":null,"abstract":"In this study, the precise transient mechanism of the super-steep subthreshold slope PN-body-tied (PNBT) silicon on insulator field-effect transistor (SOI-FET) is clarified by using technology computer-aided design. We found out that the operation mechanism differs between the turn-on and turn-off. Additionally, a new PNBT SOI-FET structure with a second gate for the high-speed operation is proposed and we showed that the new structure can reduce the leakage current upon the turn-off.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"39 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91185985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Investigation of TCAD Calibration for Saturation and Tail Current of 6.5kV IGBTs 6.5kV igbt饱和电流和尾电流的TCAD标定研究
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2019-09-01 DOI: 10.1109/SISPAD.2019.8870514
T. Suwa, S. Hayase
{"title":"Investigation of TCAD Calibration for Saturation and Tail Current of 6.5kV IGBTs","authors":"T. Suwa, S. Hayase","doi":"10.1109/SISPAD.2019.8870514","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870514","url":null,"abstract":"In this work we focus on two calibration methods to clarify a key point of TCAD calibration for turn-off waveforms and IV characteristics including the saturation currents of IGBTs at the same time. Simulated results with the method based on adjustments of the surface N+ and P+ depth ratio reproduce measured results of all calibration targets reasonably in terms of time and accuracy. On the other hand, simulated results by mainly calibrating parameters of the velocity saturation model for saturation currents hardly reproduce all calibration targets simultaneously. We explain the reason using the roughly approximated criteria of the dynamic punch-through oscillation and dynamic avalanche. We also analyze the temperature dependence of the tail current briefly which is one of the important design items of IGBTs.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"56 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89048488","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Deep Neural Network for Generation of the Initial Electrostatic Potential Profile 基于深度神经网络的初始静电电位分布生成
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2019-09-01 DOI: 10.1109/SISPAD.2019.8870521
Seung-Cheol Han, Sung-Min Hong
{"title":"Deep Neural Network for Generation of the Initial Electrostatic Potential Profile","authors":"Seung-Cheol Han, Sung-Min Hong","doi":"10.1109/SISPAD.2019.8870521","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870521","url":null,"abstract":"A deep neural network is trained to learn the electrostatic potential of the semiconductor device. In order to demonstrate its feasibility, pn diodes are considered. Various pn diodes with different doping densities are generated and the numerical solutions are calculated. The resultant electrostatic potential profiles are used in the training phase. Our numerical results clearly demonstrate that the trained neural network can provide the initial electrostatic potential reasonably well. Since the initial electrostatic potential is improved, the Newton-Raphson loop for the nonlinear Poisson equation can be converged within a smaller number of iterations.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"58 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81619405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Investigation and Modelling of Single-Molecule Organic Transistors 单分子有机晶体管的研究与建模
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2019-09-01 DOI: 10.1109/SISPAD.2019.8870484
F. Torricelli, E. Macchia, P. Romele, K. Manoli, C. Franco, Z. Kovács-Vajna, G. Palazzo, G. Scamarcio, L. Torsi
{"title":"Investigation and Modelling of Single-Molecule Organic Transistors","authors":"F. Torricelli, E. Macchia, P. Romele, K. Manoli, C. Franco, Z. Kovács-Vajna, G. Palazzo, G. Scamarcio, L. Torsi","doi":"10.1109/SISPAD.2019.8870484","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870484","url":null,"abstract":"Biofunctionalized organic transistors have been recently proposed as a simple wide-field single molecule technology. The further development and engineering of this disruptive technology urgently requires the understanding and modelling of the device operation. Here we show a physical-based numerical model of single molecule organic transistors. The model accurately reproduces the measurements in the whole range of protein concentrations with a unique set of parameters. The model provides quantitative information on the bioelectronic device operation. It is an important tool for further development of transistor-based single molecule.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"14 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89375717","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Transient Simulation of Field-Effect Biosensors How to Avoid Charge Screening Effect 场效应生物传感器瞬态仿真如何避免电荷筛选效应
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2019-09-01 DOI: 10.1109/SISPAD.2019.8870481
Kyoung Yeon Kim, Byung-Gook Park
{"title":"Transient Simulation of Field-Effect Biosensors How to Avoid Charge Screening Effect","authors":"Kyoung Yeon Kim, Byung-Gook Park","doi":"10.1109/SISPAD.2019.8870481","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870481","url":null,"abstract":"We developed a numerical simulator to model the operation of a bio-FET in transient state. The simulator takes a realistic device structure as a simulation domain, and it employs the drift-diffusion equation for ion/ channel transport, and the Ramo-Shockley theorem for accurate calculation of non- faradaic current. For efficient transient simulation, the implicit time integration scheme is employed where the solution at each time step is obtained from the coupled Newton-Raphson method. Using the simulator, we found that the sensitivity of bio- FET can be improved with transient measurement by redistribution of the mobile ions by an external electric field.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"94 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83114325","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Quantum Mechanical Simulations of the Impact of Surface Roughness on Nanowire TFET performance 表面粗糙度对纳米线TFET性能影响的量子力学模拟
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2019-09-01 DOI: 10.1109/SISPAD.2019.8870385
Yunhe Guan, Zunchao Li, H. Carrillo-Nuñez, V. Georgiev, A. Asenov
{"title":"Quantum Mechanical Simulations of the Impact of Surface Roughness on Nanowire TFET performance","authors":"Yunhe Guan, Zunchao Li, H. Carrillo-Nuñez, V. Georgiev, A. Asenov","doi":"10.1109/SISPAD.2019.8870385","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870385","url":null,"abstract":"In this work, the impact of the surface roughness (SR) on the variability in p-type InAs nanowire Tunnel FET (TFET) has been investigated. Using the Non-Equilibrium Green’s Function (NEGF) module implemented in the University of Glasgow quantum transport simulation tool, called NESS, we have simulated a statistical ensemble of 200 TFETs with unique SR profiles. The SR in each device is defined by the characteristic values of the SR root mean square amplitude (RMS) and correlation length. Our results show that the larger the RMS, the stronger the variability. We find that the SR-induced variability is reduced in InAs-Si heterostructure TFETs when comparing with their homogenous InAs counterpart. The impacts of both metal grain granularity and random discrete dopants on InAs TFETs are also studied. Our finding suggests that SR is the weakest source of statistical variability.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"15 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84224375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Atomistic Modeling Of Nanoscale Ferroelectric Capacitors Using a Density Functional Theory And Non-Equilibrium Green’s-Function Method 基于密度泛函理论和非平衡格林函数方法的纳米铁电电容器原子建模
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2019-09-01 DOI: 10.1109/SISPAD.2019.8870397
D. Stradi, U. G. Vej-Hansen, P. Khomyakov, Maeng-Eun Lee, G. Penazzi, A. Blom, J. Wellendorff, S. Smidstrup, K. Stokbro
{"title":"Atomistic Modeling Of Nanoscale Ferroelectric Capacitors Using a Density Functional Theory And Non-Equilibrium Green’s-Function Method","authors":"D. Stradi, U. G. Vej-Hansen, P. Khomyakov, Maeng-Eun Lee, G. Penazzi, A. Blom, J. Wellendorff, S. Smidstrup, K. Stokbro","doi":"10.1109/SISPAD.2019.8870397","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870397","url":null,"abstract":"We propose a first-principles atomistic method based on density functional theory and the non-equilibrium Green’s-function method to investigate the electronic and structural response of metal-insulator-metal capacitors under applied bias voltages. We validate our method by showing its usefulness in two paradigmatic cases where including finite-bias structural relaxation effects is critical to describe the device behavior: formation of dielectric dead layers in a paraelectric SRO|STO|SRO capacitor due to an applied bias voltage, and the switching behavior of a ferroelectric SRO|BTO|SRO capacitor due to an external electric field.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"7 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82053051","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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