陡坡次阈值pn体系soi场效应管的精确瞬态机理及关断时减小漏电流的新结构

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2019-09-01 DOI:10.1109/SISPAD.2019.8870519

Takayuki Mori, J. Ida, Hiroki Endo, Y. Arai

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引用次数: 2

摘要

本研究利用计算机辅助设计技术，明确了超陡亚阈斜率pn -体系硅(PNBT)绝缘子场效应晶体管(SOI-FET)的精确瞬态机理。我们发现打开和关闭的操作机制是不同的。此外，提出了一种新的PNBT SOI-FET结构，该结构具有用于高速运行的第二栅极，并且我们证明了新结构可以减少关断时的泄漏电流。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Precise Transient Mechanism of Steep Subthreshold Slope PN-Body-Tied SOI-FET and Proposal of a New Structure for Reducing Leakage Current upon Turn-off

In this study, the precise transient mechanism of the super-steep subthreshold slope PN-body-tied (PNBT) silicon on insulator field-effect transistor (SOI-FET) is clarified by using technology computer-aided design. We found out that the operation mechanism differs between the turn-on and turn-off. Additionally, a new PNBT SOI-FET structure with a second gate for the high-speed operation is proposed and we showed that the new structure can reduce the leakage current upon the turn-off.

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来源期刊

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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