Precise Transient Mechanism of Steep Subthreshold Slope PN-Body-Tied SOI-FET and Proposal of a New Structure for Reducing Leakage Current upon Turn-off

Abstract

In this study, the precise transient mechanism of the super-steep subthreshold slope PN-body-tied (PNBT) silicon on insulator field-effect transistor (SOI-FET) is clarified by using technology computer-aided design. We found out that the operation mechanism differs between the turn-on and turn-off. Additionally, a new PNBT SOI-FET structure with a second gate for the high-speed operation is proposed and we showed that the new structure can reduce the leakage current upon the turn-off.