Investigation of TCAD Calibration for Saturation and Tail Current of 6.5kV IGBTs

T. Suwa, S. Hayase
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引用次数: 5

Abstract

In this work we focus on two calibration methods to clarify a key point of TCAD calibration for turn-off waveforms and IV characteristics including the saturation currents of IGBTs at the same time. Simulated results with the method based on adjustments of the surface N+ and P+ depth ratio reproduce measured results of all calibration targets reasonably in terms of time and accuracy. On the other hand, simulated results by mainly calibrating parameters of the velocity saturation model for saturation currents hardly reproduce all calibration targets simultaneously. We explain the reason using the roughly approximated criteria of the dynamic punch-through oscillation and dynamic avalanche. We also analyze the temperature dependence of the tail current briefly which is one of the important design items of IGBTs.
6.5kV igbt饱和电流和尾电流的TCAD标定研究
在这项工作中,我们重点介绍了两种校准方法,以阐明TCAD校准的一个关键点,即关断波形和IV特性,同时包括igbt的饱和电流。基于地表N+和P+深度比调整方法的模拟结果在时间和精度上较好地再现了所有标定目标的测量结果。另一方面,主要校准饱和电流速度饱和模型参数的模拟结果很难同时再现所有校准目标。我们用动态冲穿振荡和动态雪崩的大致近似准则解释了原因。本文还简要分析了尾电流的温度依赖性,尾电流是igbt的重要设计项目之一。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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