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2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)最新文献

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Modified Dropout and Maxout based on the MNN for improving accuracy 改进了基于MNN的Dropout和Maxout，提高了精度
2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) Pub Date : 2020-11-03 DOI: 10.1109/ICSICT49897.2020.9278252
Chao Wang, Xiaojing Zha, Yinshui Xia
{"title":"Modified Dropout and Maxout based on the MNN for improving accuracy","authors":"Chao Wang, Xiaojing Zha, Yinshui Xia","doi":"10.1109/ICSICT49897.2020.9278252","DOIUrl":"https://doi.org/10.1109/ICSICT49897.2020.9278252","url":null,"abstract":"Memristor crossbar array is an emerged architecture suitable for matrix computation. Memristor based neural networks (MNN) address the speed and energy efficiency issues in computing hardware. However, there are still a lot of problems with memristor, and the limited size of memristor crossbar resulting in the accuracy of the MNN is lower than conventional neural networks (CNNs). In this paper, a modified Dropout and Maxout based MNN for improving the accuracy of the MNN is proposed. A three-layer memristor based multilayer Perceptron (MLP) in 64*128 crossbar is built to perform MNIST image recognition. The experiment results demonstrate that the in-situ training of the MLP achieves a high accuracy near 96.5% with Dropout and Maxout.","PeriodicalId":6727,"journal":{"name":"2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)","volume":"46 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2020-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90544575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A wideband transimpedance amplifier with tee network topology 一种具有tee网络拓扑结构的宽带跨阻放大器
2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) Pub Date : 2020-11-03 DOI: 10.1109/ICSICT49897.2020.9278244
Rui Yang, Shaowei Zhen, Y. Zhang, Yi-Qiang Zhao, Xiao Yang, Bo Zhang
{"title":"A wideband transimpedance amplifier with tee network topology","authors":"Rui Yang, Shaowei Zhen, Y. Zhang, Yi-Qiang Zhao, Xiao Yang, Bo Zhang","doi":"10.1109/ICSICT49897.2020.9278244","DOIUrl":"https://doi.org/10.1109/ICSICT49897.2020.9278244","url":null,"abstract":"In this paper, a wideband transimpedance amplifier (TIA) was proposed for high speed optical receiver chips. The proposed TIA replaces feedback resistance in conventional design with a kind of tee network circuit. Consequently, the bandwidth (BW) and phase margin (PM) of TIA are enhanced significantly. Besides, cascade current mirror was also used for improving power supply rejection ratio (PSRR). This wideband TIA was designed in standard 0.35 CMOS technology. Simulation results show that the proposed TIA has a bandwidth of 145 MHz, low frequency transimpedance gain of 93 $mathrm{dB}Omega$, phase margin of more than 66° and low frequency power supply rejection ratio (PSRR) of $-157dB$. And the average input referred noise current spectral density is 6. $8mathrm{pA}/sqrt{mathrm{H}mathrm{Z}}$ from DC to 500 MHz. The TIA we designed dissipates only 3.5 $mathrm{mW}$ with a 3.3 V power supply.","PeriodicalId":6727,"journal":{"name":"2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)","volume":"15 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2020-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82541777","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A Micromachined Multimodal Probe Technology for Ischemia Muscle Monitoring 用于缺血肌肉监测的微机械多模态探针技术
2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) Pub Date : 2020-11-03 DOI: 10.1109/ICSICT49897.2020.9278140
Y. T. Cheng, Y. S. Chen
{"title":"A Micromachined Multimodal Probe Technology for Ischemia Muscle Monitoring","authors":"Y. T. Cheng, Y. S. Chen","doi":"10.1109/ICSICT49897.2020.9278140","DOIUrl":"https://doi.org/10.1109/ICSICT49897.2020.9278140","url":null,"abstract":"In this paper, we present a micromachined multimodal probe technology for ischemia muscle monitoring. It is a platform technology to fabricate silicon sensing probes with the characteristics of low-cost, multifunction, and small form factor, which can detect temperature, pH value, and the concentration of K+, NH4+, etc. inside muscle tissue suitable for peripheral arterial occlusive disease detection and intraoperative heart muscle monitoring, respectively. From animal experiments, the micromachined probe has shown its potential to provide physicians a multi-mode diagnosis with corresponding real-time medical treatment feedback.","PeriodicalId":6727,"journal":{"name":"2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)","volume":"15 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2020-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73023875","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Statistical Analysis Method for Reliability Data of Aerospace Components Based on Association Rules 基于关联规则的航天零部件可靠性数据统计分析方法
2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) Pub Date : 2020-11-03 DOI: 10.1109/ICSICT49897.2020.9278224
Chengzhi Jiang, Xiaoming Fan
{"title":"A Statistical Analysis Method for Reliability Data of Aerospace Components Based on Association Rules","authors":"Chengzhi Jiang, Xiaoming Fan","doi":"10.1109/ICSICT49897.2020.9278224","DOIUrl":"https://doi.org/10.1109/ICSICT49897.2020.9278224","url":null,"abstract":"In this paper, as the aerospace components reliability test data resources are rich, randomness, characteristics of discrete, draw lessons from the analysis of large data, in this paper, a method based on association rule mining data statistical analysis is proposed, using this method, easily neglected, useful data model or rules can be excavated, this method provide data support for quality assurance model components.","PeriodicalId":6727,"journal":{"name":"2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)","volume":"27 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2020-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80341736","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The Superjunction Device with Optimized Process Window of Breakdown Voltage 具有优化击穿电压过程窗口的超结器件
2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) Pub Date : 2020-11-03 DOI: 10.1109/ICSICT49897.2020.9278209
M. Ren, Lv-Qiang Li, Yaoyao Lan, Rongyao Ma, Xin Zhang, Fang Zheng, Wei Gao, Ze-hong Li, Bo Zhang
{"title":"The Superjunction Device with Optimized Process Window of Breakdown Voltage","authors":"M. Ren, Lv-Qiang Li, Yaoyao Lan, Rongyao Ma, Xin Zhang, Fang Zheng, Wei Gao, Ze-hong Li, Bo Zhang","doi":"10.1109/ICSICT49897.2020.9278209","DOIUrl":"https://doi.org/10.1109/ICSICT49897.2020.9278209","url":null,"abstract":"In order to improve the process window of breakdown voltage (BV), a vertical variable doping (VVD) superjunction MOSFET (SJ-MOS) is proposed. The charge superposition principle is used to analyze the change of electric field (e- field) caused by the gradient doping of pillars. Compared with the uniform doping SJ-MOS, it is shown that the negative doping gradient in P-pillar and the positive doping gradient in N-pillar can make the distribution of e- field more uniform, which is beneficial to the expansion of the BV process window.","PeriodicalId":6727,"journal":{"name":"2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)","volume":"19 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2020-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76615358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 2.4GHz OOK Power Programmable CMOS RF Power Amplifier 一种2.4GHz OOK功率可编程CMOS射频功率放大器
2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) Pub Date : 2020-11-03 DOI: 10.1109/icsict49897.2020.9278369
Li-han Cui, Hejia Cai, Tao Wang, Zhi-liang Hong
{"title":"A 2.4GHz OOK Power Programmable CMOS RF Power Amplifier","authors":"Li-han Cui, Hejia Cai, Tao Wang, Zhi-liang Hong","doi":"10.1109/icsict49897.2020.9278369","DOIUrl":"https://doi.org/10.1109/icsict49897.2020.9278369","url":null,"abstract":"The post-simulation result of a power programmable 2.4GHz OOK radio frequency power amplifier (RF PA) is presented. It is implemented in 65nm CMOS process with 1.1V power supply. Its output power is programmable with digital setting channel width of the output power MOS transistors, meanwhile the output of the first stage can be digital controlled too. The simulation results of all output power levels from −23.01dBm to 8.92dBm are achieved.","PeriodicalId":6727,"journal":{"name":"2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)","volume":"6 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2020-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76917783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A Low-Power 16-Channel SiPM Readout Front-end with a Shared SAR ADC in 180 nm CMOS 低功耗16通道SiPM读出前端与共享SAR ADC在180纳米CMOS
2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) Pub Date : 2020-11-03 DOI: 10.1109/ICSICT49897.2020.9278142
Yuxuan Tang, Runxi Zhang, Jinghong Chen
{"title":"A Low-Power 16-Channel SiPM Readout Front-end with a Shared SAR ADC in 180 nm CMOS","authors":"Yuxuan Tang, Runxi Zhang, Jinghong Chen","doi":"10.1109/ICSICT49897.2020.9278142","DOIUrl":"https://doi.org/10.1109/ICSICT49897.2020.9278142","url":null,"abstract":"This paper reports a low-power and high-timing resolution silicon photomultiplier (SiPM) readout front-end in a 180 nm CMOS technology. A low-input impedance current buffer employing current feedback is developed to achieve direct charge integration without the use of power-hungry charge-sensitive amplifiers (CSAs). A customized 10-bit SAR ADC is designed for energy digitization. The ADC is shared among 16 readout channels to reduce the chip area and improve power efficiency. The SAR ADC reuses the charge integration capacitor in each readout channel as the ADC sampling capacitor to further lower the power consumption. To reduce the SiPM noise-induced timing measurement error, an on-chip high-pass filter (HPF) based fast pulse generation approach is developed to sharpen the long-tailed SiPM current pulses into fast pulses. With a 1.8 V power supply, the SAR ADC consumes 743 µW at 16 MS/s, and achieves a SNDR of 56.48 dB and a SFDR of 62.53 dB. The on-chip fast pulse generation brings a 35 ps improvement in timing resolution without increasing the number of I/O pin counts. Including the front-end current buffer, current mirrors, charge integrator and the shared ADC, each channel of the readout system consumes 3.8 mW of power with a conversion period of 1 µs.","PeriodicalId":6727,"journal":{"name":"2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)","volume":"36 6 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2020-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78012234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A CMOS Ka-Band Wireless Transceiver for Future Non-Terrestrial 6G Networks 面向未来非地面6G网络的CMOS ka波段无线收发器
2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) Pub Date : 2020-11-03 DOI: 10.1109/ICSICT49897.2020.9278199
A. Shirane, Yun Wang, K. Okada
{"title":"A CMOS Ka-Band Wireless Transceiver for Future Non-Terrestrial 6G Networks","authors":"A. Shirane, Yun Wang, K. Okada","doi":"10.1109/ICSICT49897.2020.9278199","DOIUrl":"https://doi.org/10.1109/ICSICT49897.2020.9278199","url":null,"abstract":"This paper introduces a wireless transceiver fabricated with a standard Si CMOS process for a Ka-band satellite communication. For the increasing demand for the high speed and low-cost satellite communication terminals, the presented transceiver IC contributes to the reduction of the number of components, PCB footprints, and power consumption. The transceiver exploits a direct-conversion architecture and consists of two paths multi-mode receiver and one path high linearity transmitter. The integrated two receiver paths enable the polarization and frequency multiplexing to enhance the data rate. The transceiver can operate in the frequency range of the Ka-band satellite communication with higher integration level and lower power consumption compared with the conventional Ka-band wireless transceivers.","PeriodicalId":6727,"journal":{"name":"2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)","volume":"88 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2020-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74025774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A Fast Settling Low Noise Ring Amplifier for High Speed Pipelined SAR ADCs 一种用于高速流水线SAR adc的快速沉降低噪声环形放大器
2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) Pub Date : 2020-11-03 DOI: 10.1109/ICSICT49897.2020.9278374
Longbo Fan, Bingbing Ma, N. Yan, Yun Yin, Hongtao Xu
{"title":"A Fast Settling Low Noise Ring Amplifier for High Speed Pipelined SAR ADCs","authors":"Longbo Fan, Bingbing Ma, N. Yan, Yun Yin, Hongtao Xu","doi":"10.1109/ICSICT49897.2020.9278374","DOIUrl":"https://doi.org/10.1109/ICSICT49897.2020.9278374","url":null,"abstract":"In this paper, a fast-settling ring amplifier (ringamp) with high linearity and low noise is presented. Implemented in 40 nm CMOS technology, the ringamp is shown to meet the requirements of residue amplifiers used in pipelined successive-approximation-register (SAR) analog-to-digital converters (ADCs). A modified common mode feedback (CMFB) loop makes the amplifier robust enough to work well over all process corners, which solves the long-existing problem in traditional ringamps. Simulation results show that signal to distortion ratio (SDR) is above 50 dB in various temperature/corner conditions.","PeriodicalId":6727,"journal":{"name":"2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)","volume":"21 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2020-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75457747","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Novel Ultra-thin-barrier AlGaN/GaN MIS-gated Hybrid Anode Diode Featuring Improved High-temperature Reverse Blocking Characteristic 一种新型超薄势垒AlGaN/GaN错门控杂化阳极二极管，具有改进的高温反向阻滞特性
2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) Pub Date : 2020-11-03 DOI: 10.1109/ICSICT49897.2020.9278128
Liyang Zhu, Qi Zhou, Kuangli Chen, Xiu Yang, Jiacheng Lei, Zhihua Luo, Chunhua Zhou, K. J. Chen, Bo Zhang
{"title":"A Novel Ultra-thin-barrier AlGaN/GaN MIS-gated Hybrid Anode Diode Featuring Improved High-temperature Reverse Blocking Characteristic","authors":"Liyang Zhu, Qi Zhou, Kuangli Chen, Xiu Yang, Jiacheng Lei, Zhihua Luo, Chunhua Zhou, K. J. Chen, Bo Zhang","doi":"10.1109/ICSICT49897.2020.9278128","DOIUrl":"https://doi.org/10.1109/ICSICT49897.2020.9278128","url":null,"abstract":"In this work, a novel MIS-gated hybrid anode diode (MG-HAD) based on ultra-thin-barrier (UTB) AlGaN/GaN heterostructure is demonstrated to exhibit a superior reverse blocking characteristic. An ultra-low reverse leakage of ~1.1 × 10−7 A/mm observed in room-temperature (RT) and the breakdown voltage (BV) dominated by buffer breakdown, verify the excellent reverse blocking characteristic originated from the ALD-Ah03 insulator in MIS-gate structure. More importantly, the reverse leakage current maintains respectably low at high temperature (HT) up to 200 °C, which is as low as ~5.1 × 10−7 A/mm at 200 °C and is among the best reported results at the comparable reverse bias voltage and temperature.. Such a great superiority in HT reverse blocking capability indicates that the UTB MG-HAD is a promising device structure and technology for high performance GaN power diodes.","PeriodicalId":6727,"journal":{"name":"2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)","volume":"26 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2020-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72707893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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