纳米技术新型辐射硬化存储单元设计

2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) Pub Date : 2020-11-03 DOI:10.1109/ICSICT49897.2020.9278182

Liyi Xiao, Hongchen Li, Jie Li, He Liu

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引用次数: 0

摘要

本文提出了一种采用10个晶体管的新型辐射硬化存储单元(RH-10T)，用于纳米技术的单事件干扰。仿真结果表明，RH-10T小区可靠性高，读写访问时间短，功耗可接受。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Novel Radiation Hardened Memory Cell Design for Nanometer Technology

In this paper, a novel radiation hardened memory cell (RH-10T) using 10 transistors is proposed to tolerate single event upset for nanometer technology. Simulation results have indicated that the proposed RH-10T cell has high reliability, small read and write access time and acceptable power consumption.

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来源期刊

2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)

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