A novel SOI-based ridge waveguide SiGe Heterojunction Phototransistor

Abstract

A kind of SiGe heterojunction phototransistor with gradual coupled ridge waveguide based on silicon-on-insulator (SOI SiGe GRC HPT) is designed and optimized to improve its optical responsivity and working speed. When the width and length of the ridge waveguide are optimized as 3um and 20um separately, the ridge waveguide based on SOI provide the same limitation for TE mode and TM mode and the suitable propagation path for incident light. The maximum characteristic frequency of SOI SiGe GRC HPT is 102GHz, its saturation current is 20mA and its optical responsivity is 0.5 A/W.