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2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)最新文献

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Gan Current Transducers for Harsh Environments 用于恶劣环境的Gan电流传感器
2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII) Pub Date : 2019-08-22 DOI: 10.1109/TRANSDUCERS.2019.8808193
S. Faramehr, N. Jankovic, P. Igić
{"title":"Gan Current Transducers for Harsh Environments","authors":"S. Faramehr, N. Jankovic, P. Igić","doi":"10.1109/TRANSDUCERS.2019.8808193","DOIUrl":"https://doi.org/10.1109/TRANSDUCERS.2019.8808193","url":null,"abstract":"This paper reports on the 1st gated gallium nitride (GaN) magnetic sensitive high electron mobility transistors (MagHEMTs) operation and their key manufacturing steps. The output characteristic, change of sensitivity with respect to biasing conditions and ambient temperatures are presented here. The sensitivities of 19 %/T and 4.68 %/T are reported as a response of the GaN MagHEMTs to uniform magnetic field of 30 mT at ambient temperatures of 25 °C and 175 °C, respectively.","PeriodicalId":6672,"journal":{"name":"2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)","volume":"5 1","pages":"1985-1988"},"PeriodicalIF":0.0,"publicationDate":"2019-08-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80038066","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Harnessing Poisson Effect to Realize Tunable Tunneling Nanogap Electrodes on PDMS Substrates for Strain Sensing 利用泊松效应在PDMS基板上实现可调谐隧道纳米隙电极用于应变传感
2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII) Pub Date : 2019-08-22 DOI: 10.1109/TRANSDUCERS.2019.8808819
Henry Yu, G. Boero, J. Brugger
{"title":"Harnessing Poisson Effect to Realize Tunable Tunneling Nanogap Electrodes on PDMS Substrates for Strain Sensing","authors":"Henry Yu, G. Boero, J. Brugger","doi":"10.1109/TRANSDUCERS.2019.8808819","DOIUrl":"https://doi.org/10.1109/TRANSDUCERS.2019.8808819","url":null,"abstract":"Nanogap electrodes (NGEs) are a fundamental structure for the exploration of nanoscale phenomena. In this paper, we describe the fabrication and the electro-mechanical characterization of tunable tunneling NGEs on a stretchable PDMS substrate. Bottom-up capillary-assisted particle assembly (CAPA) in nano-scale traps is used to fabricate Au nanorod dimers as NGEs. The nanogap is tuned by the contraction due to the Poisson effect of the PDMS substrate. Finite element method (FEM) simulations are performed to quantify how the NGEs design affects the local Poisson contraction under applied tensile strain. The application of the proposed approach for strain sensing is discussed.","PeriodicalId":6672,"journal":{"name":"2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)","volume":"38 1","pages":"2368-2371"},"PeriodicalIF":0.0,"publicationDate":"2019-08-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80344654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Batch Fabrication of Multilayer Polymer Cantilevers with Integrated Hard Tips for High-Speed Atomic Force Microscopy 高速原子力显微镜用集成硬尖端多层聚合物悬臂梁的批量制备
2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII) Pub Date : 2019-08-22 DOI: 10.1109/TRANSDUCERS.2019.8808606
N. Hosseini, O. Peric, Matthias Neuenschwander, Santiago H. Andany, J. Adams, G. Fantner
{"title":"Batch Fabrication of Multilayer Polymer Cantilevers with Integrated Hard Tips for High-Speed Atomic Force Microscopy","authors":"N. Hosseini, O. Peric, Matthias Neuenschwander, Santiago H. Andany, J. Adams, G. Fantner","doi":"10.1109/TRANSDUCERS.2019.8808606","DOIUrl":"https://doi.org/10.1109/TRANSDUCERS.2019.8808606","url":null,"abstract":"Increasing the speed of AFM imaging has significant benefits for academic research as well as industrial applications. In many imaging modes, the dynamic response of the cantilever probe dictates the achievable speed. Polymer cantilevers have gained great attention due to their high tracking ability and ease of fabrication. However, polymer cantilevers also have drawbacks. Polymers are not well suitable materials for the tip of the probe due to their high wear rate. This has limited the broader use of polymer cantilevers for AFM imaging. In this work, we combine the advantages of polymer cantilevers with the advantages of cantilevers made of conventional MEMS materials. We demonstrate the batch integration of a hard tip into a polymer-core multilayer cantilever probe, thereby merging speed, high-resolution and durability in a single cantilever.","PeriodicalId":6672,"journal":{"name":"2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)","volume":"67 1","pages":"2033-2036"},"PeriodicalIF":0.0,"publicationDate":"2019-08-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75938968","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Engineering Tunable Strain Fields in Suspended Graphene by Microelectromechanical Systems 微机电系统在悬浮石墨烯中的工程可调应变场
2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII) Pub Date : 2019-08-22 DOI: 10.1109/TRANSDUCERS.2019.8808807
J. Sonntag, M. Goldsche, T. Khodkov, G. Verbiest, Sven Reichardt, Nils von den Driesch, D. Buca, C. Stampfer
{"title":"Engineering Tunable Strain Fields in Suspended Graphene by Microelectromechanical Systems","authors":"J. Sonntag, M. Goldsche, T. Khodkov, G. Verbiest, Sven Reichardt, Nils von den Driesch, D. Buca, C. Stampfer","doi":"10.1109/TRANSDUCERS.2019.8808807","DOIUrl":"https://doi.org/10.1109/TRANSDUCERS.2019.8808807","url":null,"abstract":"Here, we present a micro-electromechanical system (MEMS) for the investigation of the electromechanical coupling in graphene and potentially related 2D materials. Key innovations of our technique include: (1) the integration of graphene into silicon-MEMS technology; (2) full control over induced strain fields and doping levels within the graphene membrane and their characterization via spatially resolved confocal Raman spectroscopy; and (3) the ability to detect the mechanical coupling of the graphene sheet to the MEMS device with via their mechanical resonator eigenfrequencies.","PeriodicalId":6672,"journal":{"name":"2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)","volume":"31 1","pages":"266-269"},"PeriodicalIF":0.0,"publicationDate":"2019-08-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78153093","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Self-Powered, Ultra-Reliable Hydrogen Sensor Exploiting Chemomechanical Nano-Transducer and Solar-Cell 利用化学机械纳米传感器和太阳能电池的自供电、超可靠氢传感器
2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII) Pub Date : 2019-06-26 DOI: 10.1109/TRANSDUCERS.2019.8808208
Min-Ho Seo, K. Kang, Jae‐Shin Lee, Y. Jeong, Seunghye Lee, I. Park, Jun‐Bo Yoon
{"title":"Self-Powered, Ultra-Reliable Hydrogen Sensor Exploiting Chemomechanical Nano-Transducer and Solar-Cell","authors":"Min-Ho Seo, K. Kang, Jae‐Shin Lee, Y. Jeong, Seunghye Lee, I. Park, Jun‐Bo Yoon","doi":"10.1109/TRANSDUCERS.2019.8808208","DOIUrl":"https://doi.org/10.1109/TRANSDUCERS.2019.8808208","url":null,"abstract":"This paper first reports a highly reliable self-powered hydrogen (H2) sensor employing a palladium (Pd)-based nano-transducer. The developed sensor is based on the principle of a novel chemomechanical mechanism of the Pd nano-transducer exploiting a solar cell. We theoretically and experimentally demonstrated that the proposed device can achieve highly durable operation for a wide range of H2 concentrations with remarkable sensitivity (3.1% at 2%-H2) and response time (111 s at 2%-H2) without external power. Significantly, the proposed sensor, which has a novel sensing mechanism, maintains high sensing performance for more than 150 cycles under various H2 conditions (0.5 to 2%).","PeriodicalId":6672,"journal":{"name":"2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)","volume":"21 1","pages":"334-337"},"PeriodicalIF":0.0,"publicationDate":"2019-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84505053","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Liquid Pumping and Mixing by Pzt Synthetic Jet Pzt合成射流的液体泵送与混合
2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII) Pub Date : 2019-06-24 DOI: 10.1109/TRANSDUCERS.2019.8808521
Luan Le Van, Cuong Nguyen Nhu, Tuan Nguyen Tai, Thien Xuan Dinh, C. Tran, Lam Dang Bao, Tung Thanh Bui, V. Dau, T. Chu Duc
{"title":"Liquid Pumping and Mixing by Pzt Synthetic Jet","authors":"Luan Le Van, Cuong Nguyen Nhu, Tuan Nguyen Tai, Thien Xuan Dinh, C. Tran, Lam Dang Bao, Tung Thanh Bui, V. Dau, T. Chu Duc","doi":"10.1109/TRANSDUCERS.2019.8808521","DOIUrl":"https://doi.org/10.1109/TRANSDUCERS.2019.8808521","url":null,"abstract":"In this paper, a PZT synthetic jet that can function as both an efficient pumping and mixing device is developed. Compare with the conventional design where the practice of controlling the internal flow is undertaken by microvalves structure, this approach promotes the durability and allows the device to work with different liquids at high Reynold number without losing of backflow from the diffuser, therefore provides efficient mixing. The pumping performance is applicable for commercialized counterparts while the homogeneous medium was obtained at downstream in the experiments, which was further confirmed by simulation. Notably, the chaotic mixing feature of the device is also applicable for immiscible liquids with the micro-droplet formation result at the outlet.","PeriodicalId":6672,"journal":{"name":"2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)","volume":"94 1","pages":"198-201"},"PeriodicalIF":0.0,"publicationDate":"2019-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86686177","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Z-Axis Controllable Mille-Feuille Electrode Electrorotation Device Utilizing Levitation Effect 利用悬浮效应的z轴可控千费电极电旋转装置
2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII) Pub Date : 2019-06-24 DOI: 10.1109/TRANSDUCERS.2019.8808820
Y. Okamoto, T. Tsuchiya, Charles Moslonka, Yu‐Sheng Lin, S. Tsang, F. Marty, Ayako Mizushima, Chen-li Sun, Hsiang-Yu Wang, A. Tixier-Mita, O. Français, B. Le Pioufle, Y. Mita
{"title":"Z-Axis Controllable Mille-Feuille Electrode Electrorotation Device Utilizing Levitation Effect","authors":"Y. Okamoto, T. Tsuchiya, Charles Moslonka, Yu‐Sheng Lin, S. Tsang, F. Marty, Ayako Mizushima, Chen-li Sun, Hsiang-Yu Wang, A. Tixier-Mita, O. Français, B. Le Pioufle, Y. Mita","doi":"10.1109/TRANSDUCERS.2019.8808820","DOIUrl":"https://doi.org/10.1109/TRANSDUCERS.2019.8808820","url":null,"abstract":"This paper presents a new electrorotation (ROT) device composed of thick walls and multi-electrode layers, called as mille-feuille electrode device. The proposed device has three advantages: (1) The height of a measured particle is controllable by adjusting levitation forces. (2) The rotation of the particle is not affected by the friction to the substrates. (3) The number of electrode layers is extensible.","PeriodicalId":6672,"journal":{"name":"2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)","volume":"46 13 1","pages":"213-216"},"PeriodicalIF":0.0,"publicationDate":"2019-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76025480","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Two-Chip Wireless H2S Gas Sensor System Requiring Zero Additional Electronic Components 双芯片无线H2S气体传感器系统，不需要额外的电子元件
2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII) Pub Date : 2019-06-23 DOI: 10.1109/TRANSDUCERS.2019.8808294
D. Burnett, H. Fahad, Lydia Lee, F. Maksimovic, B. Wheeler, O. Khan, A. Javey, K. Pister
{"title":"Two-Chip Wireless H2S Gas Sensor System Requiring Zero Additional Electronic Components","authors":"D. Burnett, H. Fahad, Lydia Lee, F. Maksimovic, B. Wheeler, O. Khan, A. Javey, K. Pister","doi":"10.1109/TRANSDUCERS.2019.8808294","DOIUrl":"https://doi.org/10.1109/TRANSDUCERS.2019.8808294","url":null,"abstract":"We describe a wireless hydrogen sulfide (H2S) gas sensor system comprised of two integrated circuits: a chemically-sensitive field effect transistor (CS-FET) sensor and a single-chip micro-mote (SCµM). The sensor IC is a bulk transistor functionalized to respond to H2S. The SCµM IC uses an ARM Cortex M0 to digitize sensor voltage via an ADC and transmit data through a 2.4GHz FSK transmitter based on an ultra-small, crystal-free, free-running ring oscillator. The IC pair has combined volume <4mm3, requires only a power source & antenna and no additional components, and has been demonstrated to acquire signals resulting from H2S gas and wirelessly transmit results at 2.4GHz.","PeriodicalId":6672,"journal":{"name":"2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)","volume":"2 1","pages":"1222-1225"},"PeriodicalIF":0.0,"publicationDate":"2019-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74327999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Real-Time Evaluation of Scattering Strength on Graphene Fet for Selective Sensing of Chemical Vapors 用于化学蒸气选择性传感的石墨烯场效应晶体管散射强度的实时评估
2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII) Pub Date : 2019-06-23 DOI: 10.1109/TRANSDUCERS.2019.8808762
Huiliang Liu, Yumeng Liu, Yao Chu, Takeshi Hayasaka, Ying Dong, Xiaohao Wang, Zheng You, Liwei Lin
{"title":"Real-Time Evaluation of Scattering Strength on Graphene Fet for Selective Sensing of Chemical Vapors","authors":"Huiliang Liu, Yumeng Liu, Yao Chu, Takeshi Hayasaka, Ying Dong, Xiaohao Wang, Zheng You, Liwei Lin","doi":"10.1109/TRANSDUCERS.2019.8808762","DOIUrl":"https://doi.org/10.1109/TRANSDUCERS.2019.8808762","url":null,"abstract":"This work uses a real-time evaluation method on graphene field effect transistors (FETs) to characterize the scattering strength of chemical vapors at room temperature. Compared with state-of-art technologies, three distinctive advancements have been achieved: (1) an electrical measurement scheme on graphene FETs to evaluate the scattering strength of chemical vapors by the real-time estimation of carrier concentration and mobility; (2) the demonstration of quantitative test results for three chemical vapors (water, methanol, and ethanol) with different concentrations; and (3) the illustrations of the sensing selectivity in the binary mixture scenarios by the differentiable characteristics of scattering strength. As such, the proposed method of real-time scattering strength evaluation can offer a potential alternative approach for selective gas sensing.","PeriodicalId":6672,"journal":{"name":"2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)","volume":"10 1","pages":"41-44"},"PeriodicalIF":0.0,"publicationDate":"2019-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75012062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A Generic TiN-C Process for CMOS FEOL/BEOL-Embedded Vertically-Coupled Capacitive and Piezoresistive Resonators CMOS FEOL/ beol嵌入式垂直耦合电容式和压阻式谐振器的TiN-C通用工艺
2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII) Pub Date : 2019-06-23 DOI: 10.1109/TRANSDUCERS.2019.8808683
Chao-Yu Chen, A. Zope, Ming-Huang Li, Sheng-Shian Li
{"title":"A Generic TiN-C Process for CMOS FEOL/BEOL-Embedded Vertically-Coupled Capacitive and Piezoresistive Resonators","authors":"Chao-Yu Chen, A. Zope, Ming-Huang Li, Sheng-Shian Li","doi":"10.1109/TRANSDUCERS.2019.8808683","DOIUrl":"https://doi.org/10.1109/TRANSDUCERS.2019.8808683","url":null,"abstract":"An extended titanium nitride composite (TiN-C) CMOS-MEMS platform for high-resolution oscillating sensors is presented in this work that attempts to simultaneously validate the (i) vertically-coupled resonator (VCR) pair structure and (ii) embedded piezoresistive (PZR) transduction mechanism in a single chip. With a vertically-coupled design concept, it is beneficial to significantly increase the linearity through the high mechanical stiffness couplers between VCR pair while minimizing the device footprint. On the other hand, the PZR sensing technique is further employed to yield a better signal-to-noise ratio (SNR) with a high gauge factor from non-silicided polysilicon resistor. To accomplish such a design concept in standard CMOS, the enhanced TiN-C platform with \"substrate-etching-first\" approach is proposed to prevent the tungsten vias (W-VIAs) being etched during the structure release step. As a result, we have successfully demonstrated a 3-array VCR with more than 3x power handling capability in comparison to the conventional planar 9-array counterparts. Moreover, the sub-mW capacitive driving/poly-2 sensing scheme offers a 7x reduction on the background floor than purely capacitive operation based on a single FEOL-embedded VCR with Q > 4,000.","PeriodicalId":6672,"journal":{"name":"2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)","volume":"74 1","pages":"531-534"},"PeriodicalIF":0.0,"publicationDate":"2019-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78166094","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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