Gan Current Transducers for Harsh Environments

Abstract

This paper reports on the 1st gated gallium nitride (GaN) magnetic sensitive high electron mobility transistors (MagHEMTs) operation and their key manufacturing steps. The output characteristic, change of sensitivity with respect to biasing conditions and ambient temperatures are presented here. The sensitivities of 19 %/T and 4.68 %/T are reported as a response of the GaN MagHEMTs to uniform magnetic field of 30 mT at ambient temperatures of 25 °C and 175 °C, respectively.