用于恶劣环境的Gan电流传感器

2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII) Pub Date : 2019-08-22 DOI:10.1109/TRANSDUCERS.2019.8808193

S. Faramehr, N. Jankovic, P. Igić

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引用次数: 1

摘要

本文报道了第一种门控氮化镓(GaN)磁敏高电子迁移率晶体管(MagHEMTs)的工作原理及其关键制造步骤。本文给出了输出特性、灵敏度随偏置条件和环境温度的变化。在25°C和175°C的环境温度下，GaN磁hemt对30 mT均匀磁场的响应灵敏度分别为19% /T和4.68% /T。

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Gan Current Transducers for Harsh Environments

This paper reports on the 1st gated gallium nitride (GaN) magnetic sensitive high electron mobility transistors (MagHEMTs) operation and their key manufacturing steps. The output characteristic, change of sensitivity with respect to biasing conditions and ambient temperatures are presented here. The sensitivities of 19 %/T and 4.68 %/T are reported as a response of the GaN MagHEMTs to uniform magnetic field of 30 mT at ambient temperatures of 25 °C and 175 °C, respectively.

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来源期刊

2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)

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