M. Sato, H. Kawaguchi, Takayuki Nagai, M. Kabasawa, M. Tsukihara
{"title":"Estimation of plasma density distribution in IHC source by means of FEM calculation","authors":"M. Sato, H. Kawaguchi, Takayuki Nagai, M. Kabasawa, M. Tsukihara","doi":"10.1109/IIT.2014.6940038","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940038","url":null,"abstract":"In order to obtain higher beam current extraction with better quality, it is very important to identify plasma density distribution inside the indirectly heated cathode (IHC) ion source. In this paper, the calculations of the plasma density distribution are introduced, applying the finite element method (FEM) of anisotropic thermal conduction with the special modeling near the plasma sheath to ambipolar plasma diffusion. The results of calculation show good agreement with experimental results and indicate better geometry of the IHC ion source.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"5 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74256659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Cha, S. Jin, Anbae Lee, Hun-Sung Lee, Dongseok Kim, Jihwan Park, Ilsik Jang, Ahyoung Oh, S. Jang, S. Yeom, Sung-ki Park, Cjay Cho, S. Hwang, Jongwon Park, Sungho Jo
{"title":"Formation of Source/Drain extension by Antimony implantation for high performance DRAM peripheral transistors","authors":"J. Cha, S. Jin, Anbae Lee, Hun-Sung Lee, Dongseok Kim, Jihwan Park, Ilsik Jang, Ahyoung Oh, S. Jang, S. Yeom, Sung-ki Park, Cjay Cho, S. Hwang, Jongwon Park, Sungho Jo","doi":"10.1109/IIT.2014.6940047","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940047","url":null,"abstract":"We have investigated properties of Antimony implanted Si such as crystalline defect, dopant distribution, and sheet resistance before and after annealing using TEM, SIMS, and 4-point probe. The sheet resistance of Sb implanted Si shows 35% lower than Arsenic, even though junction depth is 25% shallower. Electrical behaviors of Sorce/Drain extension implanted with Sb show 10% improvement of Ion/Ioff characteristics without degradation of drain-induced barrier lowering compared to the As.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"22 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89472128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Instability in low energy beams extracted from BF3 plasma","authors":"Y. Inouchi, Takeshi Matsumoto, S. Dohi, M. Naito","doi":"10.1109/IIT.2014.6940040","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940040","url":null,"abstract":"Ion beam instabilities on a wide ribbon beam which cross-section is 150 cm × 10 cm are discussed. At low energy conditions, we detected two kinds of instabilities on the ion beam extracted from BF<sub>3</sub> plasmas. One kind of the instabilities is that onset of the instability is dependent on the extraction current from the ion source. This instability occurred when the extraction current exceeded 300 - 350 mA at the energy of 15keV. Another is that the onset is dependent on the BF<sub>2</sub><sup>+</sup> beam current. The BF<sub>2</sub><sup>+</sup> beam current became unstable when it exceeded about 20 μA/cm<sup>2</sup> at 15keV. Energy dependence of these instabilities is also discussed.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"116 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84922918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Radiation-induced effects in titanium alloys by α-particles irradiation","authors":"K. Mukashev, Kunsulu Shadinova, F. Umarov","doi":"10.1109/IIT.2014.6939981","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939981","url":null,"abstract":"Measurements of the angular distribution of annihilation photons (ADAP) are often applied to investigate the behavior of point defects unannealed, plastically deformed, and irradiated titanium alloys. It is shown that irradiation by α-particles is accompanied by the formation of the vacancy clusters in titanium alloys. The combined action of radiation damages - vacancy, vacancy complex and a new phase precipitates - are appearing under high energy α-particles irradiation and this becomes the reason of being abnormally large and irregular by component concentration values of observed annihilation parameters of investigating titanium alloys. This is testified by the different degree of their damaging ability.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"46 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87014339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Scalability study of boron-based ULE implants for advanced CMOS technology","authors":"S. Qin, Y. Hu, A. Mcteer","doi":"10.1109/IIT.2014.6939959","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939959","url":null,"abstract":"Conventional beam-line (BL) implant shows a poor scalability of profiles (x<sub>j</sub>) versus energy at the ULE implant regime due to serious channeling effect and energy contamination issue. B<sub>2</sub>H<sub>6</sub> PLAD shows intrinsic channeling effect immunity with a totally different mechanism. An in-situ, build-in B deposition layer is formed during PLAD process as a screen amorphous layer to minimize channeling effect and reduce the surface damage residues as well. For above reasons, B<sub>2</sub>H<sub>6</sub> PLAD shows a good scalability of profiles (x<sub>j</sub>) versus energy, and achieves better R<sub>S</sub>-x<sub>j</sub> characteristics and x<sub>j</sub> abruptness, and then better device performance including lower series and contact resistances, better I<sub>ON</sub>/I<sub>OFF</sub> ratio and less short channel effect (SCE), etc. than BL implant counterparts.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"48 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73607467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Shayesteh, D. O'Connell, F. Gity, F. Murphy-Armando, R. Yu, K. Huet, I. Toqué-Trésonne, F. Cristiano, S. Boninelli, H. H. Henrichsen, D. H. Petersen, P. Nielsen, R. Duffy
{"title":"Laser thermal annealing of Ge, optimized for highly activated dopants and diode ION/IOFF ratios","authors":"M. Shayesteh, D. O'Connell, F. Gity, F. Murphy-Armando, R. Yu, K. Huet, I. Toqué-Trésonne, F. Cristiano, S. Boninelli, H. H. Henrichsen, D. H. Petersen, P. Nielsen, R. Duffy","doi":"10.1109/IIT.2014.6939953","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939953","url":null,"abstract":"The authors compared the influence of laser thermal annealing (LTA) and rapid thermal annealing (RTA) on dopant activation and electrical performance of phosphorus and arsenic doped n+/p junction. High carrier concentration above 10<sup>20</sup> cm<sup>-3</sup> as well as an I<sub>ON</sub>/I<sub>OFF</sub> ratio of approximately 10<sup>5</sup> and ideality factor (n) approximately 1.2-1.5 was achieved with LTA. However RTA revealed very high I<sub>ON</sub>/I<sub>OFF</sub> ratio approximately 10<sup>7</sup>, and n close to 1. Non ideal behavior in LTA diodes is attributed to existence of deep level defects in the junction, contributing to leakage current. Meanwhile ideal behavior of RTA diodes is due to removal of defects in the junction during the high thermal budget.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"102 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75268288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Plasma Doping optimizing knock-on effect","authors":"Kazuhiko Tonari, Kouji Suzuki, K. Suu","doi":"10.1109/IIT.2014.6940025","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940025","url":null,"abstract":"Many studies have been done to apply potential of Plasma Doping to manufacturing semiconductor devices. But some development problems about mass production are still left unsolved. One of the problems is that it is more difficult for Plasma Doping to control dosage. To clear this problem we investigated a dominant mechanism of mixing dopant atoms (boron) in silicon atoms, using inductively coupled plasma, radio frequency bias and B<sub>2</sub>H<sub>6</sub> gas. And it is shown that main implantation mechanism of this plasma doping is the collision between B<sub>x</sub>H<sub>y</sub>* and biased Ar<sup>+</sup>: “knock-on phenomenon”. We presented new doping procedure “2STEP Process”, where B<sub>x</sub>H<sub>y</sub>* deposition coating and knocking-on the film by Ar<sup>+</sup> accelerated with RF bias were completely separated. By using “2STEP Process”, it is shown that dosage can be controlled by deposition thickness and depth profile can be controlled by bias voltage.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"11 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72968478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Studies on ultra shallow junction 20nm P-MOS with 250°C microwave annealing for activation of boron dopants in silicon","authors":"Wen-Hsi Lee, M. Tsai, W. Liao","doi":"10.1109/IIT.2014.6939961","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939961","url":null,"abstract":"In order to fabricate ultra-shallow junction (USJ) for 20nm IC node application, a low energy (400eV) ion implantation and a novel microwave annealing technique with two steps for the solid phase epitaxy regrowth and activation of boron dopants in silicon were used in this study. In the first step annealing, a 2.4 kWatt(~500°C) high power microwave annealing was used to regrowth the amorphous layer with PAI treatment of Ge (20keV @5e14 atoms/cm2) into crystal silicon. The activation energy (2.3 eV) to attain rapid lattice restoration for the solid phase epitaxy regrowth by microwave annealing is lower than that by the conventional RTP. In the second step annealing, since the crystalline silicon has high absorption efficiency to microwave, a 0.6 kWatt(~250°C) low power microwave annealing is able to activate implanted boron in silicon (400eV @1e15 atoms/cm2), and decrease the resistance to 436 ohm. / sq without diffusion. We have successfully demonstrated that the novel ultra low temperature microwave annealing technique is promising for improvement on P-MOS performance. The on/off current ratio (Ion/off) of the P-MOS is more than 2×106 (VDS = -0.05 V). The low resistance of 436 ohm./sq after activating by 250°C microwave annealing is reflected to the high performance of P-MOS with a lower S.S.(-92.59mV), and a high hole mobility 27.5cm2/V-S.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"38 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83137504","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
B. Vanderberg, Patrick Heres, E. Eisner, B. Libby, Joseph Valinski, W. Huff
{"title":"Introducing Purion H, a scanned spot beam high current ion implanter","authors":"B. Vanderberg, Patrick Heres, E. Eisner, B. Libby, Joseph Valinski, W. Huff","doi":"10.1109/IIT.2014.6940041","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940041","url":null,"abstract":"As a member of the Purion ion implanter family, Purion H is Axcelis' next generation high current implanter. Purion H provides customers with an unprecedented level of process flexibility and yield-enabling technology, and features the platform's four common differentiators: Purion Contamination Shield™, Purion Vector™ Dose and Angle Control System, Purion 500 wafer/hour endstation and the Eterna™ ELS source. Like Purion M and Xe, Purion H uses a hybrid scan architecture. Its scanned spot beam technology delivers precise dosage, angle and dose rate on all points of the wafer, by permitting simultaneous and independent implant uniformity and angle control. Purion H high also comprises a five-filter beamline to deliver beam purity for low variability and defects: a series of dipole magnets and a deflecting energy filter separate unwanted contaminants from the ion beam. Magnetic beam scanning permits space-charge neutralization of high beam currents, resulting in high productivity via high beam currents in combination with short tune times and a fast 500 wafer/hour end station. Other new features include a maintenance friendly, integrated source extraction system; a novel uniformity correction algorithm; a new, higher output microwave PEF powered by a solid-state amplifier for metals-free charge neutralization of high current beams; and advanced beam diagnostics to quantify average angles and spread of the scanned spot beam. Finally, the dosimetry system, which is common to the Purion M medium current implanter, extends the application space of Purion H beyond the traditional coverage of high current implanters down to doses <; 2e11 /cm2, enabling new applications while maintaining productivity.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"39 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85546055","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Z. Jost, A. Jones, C. Lottes, I. Peidous, M. Ries, A. Usenko
{"title":"Comparison of spot and wide beam implanters for making SOI wafers by layer transfer","authors":"Z. Jost, A. Jones, C. Lottes, I. Peidous, M. Ries, A. Usenko","doi":"10.1109/IIT.2014.6939973","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939973","url":null,"abstract":"The quality of silicon-on-insulator (SOI) wafers manufactured with either spot beam implanter or wide beam implanter are compared. The comparison shows similar quality wafers and a potential advantage of wide beam implanters in throughput.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"19 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76765804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}