2014 20th International Conference on Ion Implantation Technology (IIT)最新文献_第6页

Estimation of plasma density distribution in IHC source by means of FEM calculation 用有限元方法估算IHC源等离子体密度分布

2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6940038

M. Sato, H. Kawaguchi, Takayuki Nagai, M. Kabasawa, M. Tsukihara

引用次数: 0

Formation of Source/Drain extension by Antimony implantation for high performance DRAM peripheral transistors 高性能DRAM外围晶体管中锑注入形成源极/漏极扩展

2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6940047

J. Cha, S. Jin, Anbae Lee, Hun-Sung Lee, Dongseok Kim, Jihwan Park, Ilsik Jang, Ahyoung Oh, S. Jang, S. Yeom, Sung-ki Park, Cjay Cho, S. Hwang, Jongwon Park, Sungho Jo

引用次数: 0

Instability in low energy beams extracted from BF3 plasma 从BF3等离子体中提取的低能量光束的不稳定性

2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6940040

Y. Inouchi, Takeshi Matsumoto, S. Dohi, M. Naito

引用次数: 0

Radiation-induced effects in titanium alloys by α-particles irradiation α-颗粒辐照对钛合金的辐射诱导效应

2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6939981

K. Mukashev, Kunsulu Shadinova, F. Umarov

引用次数: 0

Scalability study of boron-based ULE implants for advanced CMOS technology 先进CMOS技术中硼基ULE植入物的可扩展性研究

2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6939959

S. Qin, Y. Hu, A. Mcteer

引用次数: 2

Laser thermal annealing of Ge, optimized for highly activated dopants and diode ION/IOFF ratios 激光热退火锗，优化了高活性掺杂和二极管离子/IOFF比

2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6939953

M. Shayesteh, D. O'Connell, F. Gity, F. Murphy-Armando, R. Yu, K. Huet, I. Toqué-Trésonne, F. Cristiano, S. Boninelli, H. H. Henrichsen, D. H. Petersen, P. Nielsen, R. Duffy

引用次数: 0

Plasma Doping optimizing knock-on effect 等离子体兴奋剂优化连锁效应

2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6940025

Kazuhiko Tonari, Kouji Suzuki, K. Suu

引用次数: 0

Studies on ultra shallow junction 20nm P-MOS with 250°C microwave annealing for activation of boron dopants in silicon 超浅结20nm P-MOS在250℃微波退火下对硅中硼掺杂剂的活化研究

2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6939961

Wen-Hsi Lee, M. Tsai, W. Liao

{"title":"Studies on ultra shallow junction 20nm P-MOS with 250°C microwave annealing for activation of boron dopants in silicon","authors":"Wen-Hsi Lee, M. Tsai, W. Liao","doi":"10.1109/IIT.2014.6939961","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939961","url":null,"abstract":"In order to fabricate ultra-shallow junction (USJ) for 20nm IC node application, a low energy (400eV) ion implantation and a novel microwave annealing technique with two steps for the solid phase epitaxy regrowth and activation of boron dopants in silicon were used in this study. In the first step annealing, a 2.4 kWatt(~500°C) high power microwave annealing was used to regrowth the amorphous layer with PAI treatment of Ge (20keV @5e14 atoms/cm2) into crystal silicon. The activation energy (2.3 eV) to attain rapid lattice restoration for the solid phase epitaxy regrowth by microwave annealing is lower than that by the conventional RTP. In the second step annealing, since the crystalline silicon has high absorption efficiency to microwave, a 0.6 kWatt(~250°C) low power microwave annealing is able to activate implanted boron in silicon (400eV @1e15 atoms/cm2), and decrease the resistance to 436 ohm. / sq without diffusion. We have successfully demonstrated that the novel ultra low temperature microwave annealing technique is promising for improvement on P-MOS performance. The on/off current ratio (Ion/off) of the P-MOS is more than 2×106 (VDS = -0.05 V). The low resistance of 436 ohm./sq after activating by 250°C microwave annealing is reflected to the high performance of P-MOS with a lower S.S.(-92.59mV), and a high hole mobility 27.5cm2/V-S.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"38 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83137504","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Introducing Purion H, a scanned spot beam high current ion implanter 介绍Purion H型扫描点束大电流离子注入器

2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6940041

B. Vanderberg, Patrick Heres, E. Eisner, B. Libby, Joseph Valinski, W. Huff

{"title":"Introducing Purion H, a scanned spot beam high current ion implanter","authors":"B. Vanderberg, Patrick Heres, E. Eisner, B. Libby, Joseph Valinski, W. Huff","doi":"10.1109/IIT.2014.6940041","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940041","url":null,"abstract":"As a member of the Purion ion implanter family, Purion H is Axcelis' next generation high current implanter. Purion H provides customers with an unprecedented level of process flexibility and yield-enabling technology, and features the platform's four common differentiators: Purion Contamination Shield™, Purion Vector™ Dose and Angle Control System, Purion 500 wafer/hour endstation and the Eterna™ ELS source. Like Purion M and Xe, Purion H uses a hybrid scan architecture. Its scanned spot beam technology delivers precise dosage, angle and dose rate on all points of the wafer, by permitting simultaneous and independent implant uniformity and angle control. Purion H high also comprises a five-filter beamline to deliver beam purity for low variability and defects: a series of dipole magnets and a deflecting energy filter separate unwanted contaminants from the ion beam. Magnetic beam scanning permits space-charge neutralization of high beam currents, resulting in high productivity via high beam currents in combination with short tune times and a fast 500 wafer/hour end station. Other new features include a maintenance friendly, integrated source extraction system; a novel uniformity correction algorithm; a new, higher output microwave PEF powered by a solid-state amplifier for metals-free charge neutralization of high current beams; and advanced beam diagnostics to quantify average angles and spread of the scanned spot beam. Finally, the dosimetry system, which is common to the Purion M medium current implanter, extends the application space of Purion H beyond the traditional coverage of high current implanters down to doses <; 2e11 /cm2, enabling new applications while maintaining productivity.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"39 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85546055","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Comparison of spot and wide beam implanters for making SOI wafers by layer transfer 层转移制SOI晶圆的点束与宽束植入器之比较

2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6939973

Z. Jost, A. Jones, C. Lottes, I. Peidous, M. Ries, A. Usenko

引用次数: 0