2014 20th International Conference on Ion Implantation Technology (IIT)最新文献

Implantation and metrology solutions for low energy boron implant on 450mm wafers 450mm硅片低能硼植入及计量解决方案

2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6940018

A. Robbes, K.-A. Bui-T Meura, M. Moret, M. Schuhmacher, F. Torregrosa, G. Borvon

{"title":"Implantation and metrology solutions for low energy boron implant on 450mm wafers","authors":"A. Robbes, K.-A. Bui-T Meura, M. Moret, M. Schuhmacher, F. Torregrosa, G. Borvon","doi":"10.1109/IIT.2014.6940018","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940018","url":null,"abstract":"The transition to semiconductor manufacturing on 450mm wafers continues to be one of the biggest challenges in the semiconductors industry. Even though lithography is critical for 450mm development, process tools such as ion implantation and associated metrology are also challenged by scaling-up to keep acceptable CoO and excellent capabilities. There is a double challenge: scale up to 450mm and cope with shallower or 3D doping specifications. For beam line implanters, the 450mm is challenging: direct beam imposes a process time linear with the implanted area and a throughput which decreases while reducing energy. Therefore the 450mm is a great challenge. Plasma immersion ion implantation (PIII) technology offers a good alternative to beam line implanter with a high throughput at low energy, an implant time independent from the surface area and the possibility to implant on 3D structures. IBS has built a 450 mm PIII prototype based on its PULSION® Technology [1] and is evaluating non uniformity of BF3 implantation on 450 mm n-type wafers. To monitor such a light element we used the Shallow Probe tool, based on a simple, original and unique approach: Low Energy Electron induced X-ray Emission Spectroscopy (LEXES). The wafer is probed by a low energy electron beam and the soft X-rays emission is collected in WDS (Wavelength Dispersive Spectroscopy) spectrometers. The technology uses a dedicated low energy and high current electron column that has been specifically designed by CAMECA to optimize surface analysis instead of bulk analysis [2]. CAMECA is developing a new 450mm tool and collaborates with IBS to provide solutions to semiconductor manufacturers for ion implantation. LEXES results of B dose implant mapping have demonstrated a B dose non-uniformity of less than 4% over a 450mm wafer. Additionally the LEXES tool has been used to assess uniformity of the in-depth localization of the boron implant.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"410 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75188860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Increase of sp3 content in a-C films with gas cluster ion beam bombardments; XPS and NEXAFS study 气团离子束轰击提高a-C膜中sp3含量XPS和NEXAFS研究

2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6939967

N. Toyoda, Asahi Kimura, I. Yamada

引用次数: 4

Damage engineered Se implant for NMOS TiSix contact resistivity reduction 用于降低NMOS TiSix接触电阻率的损伤工程Se植入物

2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6939955

K. V. Rao, F. Khaja, C. Ni, S. Sharma, B. Zheng, J. Ramalingam, J. Gelatos, J. Lei, A. Mayur, R. Hung, V. Banthia, A. Brand, N. Variam

引用次数: 2

Symmetric beam line technique for a single-wafer ultra-high energy ion implanter 单晶片超高能量离子注入器的对称束线技术

2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6940029

S. Ninomiya, H. Sasaki, K. Inada, K. Kato, Yoshitaka Amano, Kazuhiro Watanabe, M. Kabasawa, H. Kariya, M. Tsukihara, K. Ueno

{"title":"Symmetric beam line technique for a single-wafer ultra-high energy ion implanter","authors":"S. Ninomiya, H. Sasaki, K. Inada, K. Kato, Yoshitaka Amano, Kazuhiro Watanabe, M. Kabasawa, H. Kariya, M. Tsukihara, K. Ueno","doi":"10.1109/IIT.2014.6940029","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940029","url":null,"abstract":"In order to fabricate highly sensitive image sensors, ultra-high energy ion beams, such as 5 MeV of boron, are required. SEN has developed the S-UHE, a single-wafer ultra-high energy ion implanter, to obtain such ultra-high energy beams. The S-UHE has adopted an electrostatic and symmetric, parallelizing lens system, the concept of which is already used in the MC3-II, a medium-current ion implanter, and the SHX, a single-wafer high-current implanter. This system provides very good uniformity, even when a large amount of outgassing from photoresist materials is generated. Since the ion beam energy is so high at the lens system, a compound electrostatic parallelizing lens system is introduced. Beam angles have been controlled within 0.05° for any recipe in experiments with the electrostatic parallelizing lens system. Another beam line element specifically adopted in the S-UHE is an electric quadrupole lens installed between the two dipole magnets, in order to suppress beam current loss. This electric lens can easily form achromatic ion beam transportation without any significant deformation of the magnetic field.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"99 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77772644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

The prospects and challenges in junction process technology for advanced semiconductor devices 先进半导体器件结制程技术的前景与挑战

2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6939767

K. Suguro

引用次数: 2

Determining defect & strain effects on active layer mobility 确定缺陷和应变对活性层迁移率的影响

2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6940013

A. Joshi, S. Prussin

引用次数: 0

The influence of dose rate on ultra shallow surface dopant profile 剂量率对超浅表面掺杂形态的影响

2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6939964

Shao-Yu Hu, G. Lin, Ching-I Li, Hong Lu, Z. Wan

引用次数: 0

Elastomers for control of wafer temperature in the ≈50°C range during high dose ion implantation 在高剂量离子注入过程中，硅片温度控制在≈50°C范围内的弹性体

2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6939983

J. Springer, W. Wriggins, Juergen Kusterer, K. Zotter, M. Current

引用次数: 0

Integrated divergent beam for FinFET Conformal Doping 用于FinFET共形掺杂的集成发散光束

2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6939992

Ching-I Li, G. Lin, Rekha Padmanabhan, G. N. Cai, Z. Wan, W. Platow, K. Saadatmand, Po-Heng Lin, Chih-Ming Tai, R. Chang

引用次数: 5

Phosphorus redistribution caused by electrical deactivation of phosphorus at low temperatures 磷在低温下电失活引起的磷重分布

2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI: 10.1109/IIT.2014.6940001

R. Chang, Chih-hung Lin, Hong Lu, Z. Wan

引用次数: 0