Damage engineered Se implant for NMOS TiSix contact resistivity reduction

Abstract

Low specific contact resistivity (7E-9 Ohm.cm2) was achieved for contacts with TiSix to in-situ epitaxially doped Si:P n-SD regions by use of Se implantation prior to Ti deposition. The key to this achievement is the optimization of implant energy and dose, and use of millisecond laser anneal to heal the implant damage, while allowing sufficient inter-mixing of Ti, Si, Se and P atoms across a smooth TiSix/Si:P interface, to realize the SBH-lowering benefits of Se.