确定缺陷和应变对活性层迁移率的影响

2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI:10.1109/IIT.2014.6940013

A. Joshi, S. Prussin

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引用次数: 0

摘要

在这里，我们通过利用ASTM标准F723提供的理想数据，为缺陷分析提供统一的处理方法。Active Layer parametric, Inc.的差分霍尔效应法(DHE)数据已被用于直接测量迁移率剖面。这些值与理想无缺陷和完全松弛系统的偏差提供了一种可用的测量方法，用于测量掺杂硅材料中缺陷和/或应变的总影响。

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Determining defect & strain effects on active layer mobility

Here we provide a unified treatment for defect analysis by leveraging ideal data provided by ASTM Standard F723. Active Layer Parametrics, Inc.'s Differential Hall Effect Method (DHE) data has been used to directly measure mobility profiles. Deviations of these values from the ideal defect-free, and fully relaxed systems provides a usable measure of the total effect of defects and/or strain in doped silicon materials.

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2014 20th International Conference on Ion Implantation Technology (IIT)

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